LED structure and preparation method thereof
By forming an ion implantation region in the LED structure and applying compressive stress, the problem of uneven LED light emission wavelength is solved, the luminous efficiency and wavelength uniformity are improved, and the lattice mismatch of InGaN materials is reduced.
Patent Information
- Application Number
- CN202310679894.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-08
- Publication Date
- 2024-12-10
AI Technical Summary
The light emission wavelength of the LED structure is uneven, which affects the light emission quality.
By forming an ion implantation region around the LED light emitting unit, implanting passivation ions and stress-regulating ions, adjusting the thickness and lattice constant of the ion implantation region, applying compressive stress to adjust the wavelength of the LED structure, improving wavelength uniformity, and improving luminescence efficiency .
It effectively improves the wavelength uniformity of the LED structure, increases the luminous efficiency and intensity, reduces non-radiative recombination, and reduces the lattice mismatch between InGaN and other materials.
Smart Images
Figure CN119108476A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor substrates, and in particular to an LED structure and a preparation method thereof. Background Art
[0002] In recent years, light emitting diodes (LEDs) have been widely used in lighting, backlighting, display, indication and other fields as a new generation of green light sources. Light emitting diodes include stacked N-type semiconductor layers, light emitting layers and P-type semiconductor layers. Group III nitrides represented by gallium nitride are wide bandgap semiconductor materials with direct band gaps. They have excellent properties such as high electron drift saturation velocity, good thermal conductivity, strong chemical bonds, high temperature resistance and corrosion resistance, and are widely used in LEDs. Existing gallium nitride-based LED epitaxial wafers include a sapphire substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer stacked on the sapphire substrate in sequence, wherein the multi-quantum well layer includes alternately stacked InGaN quantum well layers and GaN quantum barrier layers.
[0003] However, because the LED structure undergoes multiple preparation steps and is affected by the preparation environment, the LED structure at different positions has uneven wavelengths, which greatly affects the light-emitting quality of the LED structure. Summary of the invention
[0004] In view of this, the embodiments of the present disclosure provide an LED structure and a method for preparing the same to solve the technical problem of uneven light emission wavelength of the LED structure in the prior art.
[0005] According to one aspect of the present disclosure, the present disclosure provides an LED structure, including:
[0006] The LED light-emitting unit comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are stacked;
[0007] An ion implantation region surrounds the LED light-emitting unit, wherein the material of the ion implantation region includes the material of the LED light-emitting unit, passivation ions and stress regulation ions.
[0008] As an optional embodiment, the thickness of the ion implantation region is the same width from bottom to top, increases linearly, decreases linearly, changes periodically, increases first and then decreases, increases in steps, and decreases in steps.
[0009] As an optional embodiment, the thicknesses of the ion implantation regions at different positions in the horizontal direction are different.
[0010] As an optional embodiment, the lattice constant of the material of the ion implantation region is greater than the lattice constant of the material of the LED light emitting unit.
[0011] As an optional embodiment, the lattice constants of the ion implantation regions of the side walls of the LED light emitting unit located at different positions in the vertical direction are different.
[0012] As an optional embodiment, the passivation ions include at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, fluorine ions and argon ions.
[0013] As an optional embodiment, the stress-regulating ions include at least one of indium ions, aluminum ions, magnesium ions, germanium ions, tin ions, beryllium ions, zinc ions and cadmium ions.
[0014] As an optional embodiment, along the direction from the first semiconductor layer to the second semiconductor layer, the change trend of the passivation ion doping concentration is uniform, linear, periodic or step-wise.
[0015] As an optional embodiment, along the direction from the first semiconductor layer to the second semiconductor layer, the change trend of the stress-regulated ion doping concentration is uniform, linear, periodic or step-wise.
[0016] As an optional embodiment, the ion implantation region includes a passivation ion implantation region and a stress regulation ion implantation region, the passivation ion implantation region surrounds the LED light-emitting unit, and the stress regulation ion implantation region surrounds the passivation ion implantation region.
[0017] As an optional embodiment, the material of the passivation ion implantation region includes the material of the LED light-emitting unit and passivation ions, and the material of the stress regulation ion implantation region includes the material of the LED light-emitting unit and stress regulation ions.
[0018] As an optional embodiment, the material of the LED light-emitting unit is III-V group nitride.
[0019] As an optional embodiment, the LED structure further includes:
[0020] a first electrode, electrically connected to the first semiconductor layer;
[0021] The second electrode is electrically connected to the second semiconductor layer.
[0022] According to another embodiment of the present disclosure, the present disclosure also provides a method for preparing an LED structure, comprising the following steps:
[0023] S1, sequentially growing a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer on a substrate;
[0024] S2, disposing a patterned mask layer on the second semiconductor layer, wherein the mask layer has a plurality of openings exposing the second semiconductor layer;
[0025] S3. Perform ion implantation on the side of the second semiconductor layer exposed by the opening, injecting passivation ions and stress regulation ions to form an ion implantation region penetrating the second semiconductor layer, the multi-quantum well layer and the first semiconductor layer, and an LED light-emitting unit surrounded by the ion implantation region, wherein the material of the ion implantation region includes the material of the LED light-emitting unit, passivation ions and stress regulation ions.
[0026] As an optional embodiment, the thickness of the ion implantation region is controlled by the ion implantation method.
[0027] As an optional embodiment, the doping concentration variation of the passivation ions and the stress regulating ions is controlled by the ion implantation method.
[0028] As an optional embodiment, the ion implantation method is used to make the lattice constants of the ion implantation regions on the side walls of the LED light-emitting unit at different positions different.
[0029] As an optional embodiment, the passivation ions are injected into the LED light-emitting unit to form a passivation ion injection region, and the stress regulation ions are injected to form a stress regulation ion injection region, the passivation ion injection region surrounds the LED light-emitting unit, and the stress regulation ion injection region surrounds the passivation ion injection region.
[0030] Compared with the prior art, the present invention has the following advantages:
[0031] The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes an LED light-emitting unit, including a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, and an ion implantation region surrounding the LED light-emitting unit, wherein the material of the ion implantation region includes the material of the LED light-emitting unit, passivation ions, and stress regulation ions; the LED light-emitting unit is isolated by injecting passivation ions, thereby avoiding side wall etching damage caused by an etching process and reducing the efficiency of the LED light-emitting unit; the lattice constant of the material of the ion implantation region is increased by injecting stress regulation ions, so that the ion implantation region can apply compressive stress to the side wall of the LED light-emitting unit, and the wavelength of the LED structure is adjusted by applying the compressive stress, thereby improving the wavelength uniformity of the LED structure.
[0032] On the other hand, applying stress to the sidewalls of the LED structure increases the hole concentration in the second semiconductor layer of the LED structure, thereby increasing the number of holes injected into the light-emitting layer, reducing the number of electrons in the multi-quantum well layer that have not been recombined with holes, and further reducing the number of electrons that overflow from the multi-quantum well layer to the second semiconductor layer, reducing non-radiative recombination, and improving luminous efficiency and luminous intensity; on the other hand, the multi-quantum well layer includes InGaN material, and the stress is used to adjust the light emission wavelength. At the same time, the In content required when the LED light-emitting unit emits light of the same wavelength can be reduced, thereby reducing the lattice mismatch between InGaN and other materials in the light-emitting layer, and further improving the luminous efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] Figure 1 Shown is a schematic diagram of an LED structure provided in an embodiment of the present disclosure.
[0034] Figures 2a to 2c Shown is a schematic diagram of an LED structure provided in an embodiment of the present disclosure.
[0035] Figure 3 Shown is a schematic diagram of an LED structure provided in an embodiment of the present disclosure.
[0036] Figure 4 Shown is a schematic diagram of an LED structure provided in an embodiment of the present disclosure.
[0037] Figure 5 Shown is a schematic diagram of an LED structure provided in an embodiment of the present disclosure.
[0038] Figure 6 Shown is a flow chart of a method for preparing an LED structure provided in an embodiment of the present disclosure.
[0039] Figure 7-9 The figure shows a schematic diagram of the decomposition of the LED structure provided in one embodiment of the present disclosure during the preparation process. DETAILED DESCRIPTION
[0040] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.
[0041] In order to solve the technical problem of uneven light emission wavelength of LED structures in the prior art, the present disclosure provides an LED structure and a preparation method thereof. The LED structure includes an LED light-emitting unit, including a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, and an ion implantation region surrounding the LED light-emitting unit, wherein the material of the ion implantation region includes the material of the LED light-emitting unit, passivation ions, and stress regulation ions; the LED light-emitting unit is isolated by injecting passivation ions, thereby avoiding side wall etching damage caused by an etching process and reducing the efficiency of the LED light-emitting unit; the lattice constant of the material of the ion implantation region is increased by injecting stress regulation ions, so that the ion implantation region can apply compressive stress to the side wall of the LED light-emitting unit, and the wavelength of the LED structure is adjusted by applying compressive stress, thereby improving the wavelength uniformity of the LED structure.
[0042] Combine the following Figures 1 to 9 An LED structure and a preparation method thereof mentioned in the present disclosure are further illustrated by way of example.
[0043] Figure 1 FIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure. Figure 1 As shown, the LED structure includes: an LED light-emitting unit 20, including a first semiconductor layer 21, a multi-quantum well layer 22 and a second semiconductor layer 23 that are stacked; an ion implantation region 30, surrounding the LED light-emitting unit 20, wherein the material of the ion implantation region 30 includes the material of the LED light-emitting unit 20, passivation ions and stress regulation ions.
[0044] In this embodiment, the material of the LED light-emitting unit 20 is a III-V group nitride, the passivation ions include at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, fluorine ions and argon ions, and the stress-regulating ions include at least one of indium ions, aluminum ions, magnesium ions, germanium ions, tin ions, beryllium ions, zinc ions and cadmium ions. By injecting the passivation ions, the material of the LED light-emitting unit 20 can be converted into an isolation material, thereby electrically isolating two adjacent LED light-emitting units 20 from each other, avoiding the sidewall etching damage caused by the etching process, and reducing the efficiency of the LED light-emitting unit. By injecting the stress-regulating ions, the lattice constant of the III-V group nitride material can be increased, so that the lattice constant of the material of the ion implantation area 30 is greater than the lattice constant of the material of the LED light-emitting unit 20, so that the ion implantation area 30 can apply compressive stress to the side wall of the LED light-emitting unit 20, and the lattice constants of the ion implantation area 30 on the side wall of the LED light-emitting unit 20 located at different positions are different. The wavelength of the LED structure is adjusted by applying compressive stress, thereby improving the wavelength uniformity of the LED structure.
[0045] In one embodiment, Figures 2a to 2cFIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure. The thickness of the ion implantation region 30 increases linearly from bottom to top with equal width (eg Figure 2a As shown), linear decrease (as shown Figure 2b As shown), periodic changes, first increase and then decrease (as shown Figure 2c During the preparation of the LED structure, the light-emitting layers at different positions have the problem of uneven light-emitting wavelengths. By controlling the thickness variation of the ion implantation region 30, the wavelengths of the LED light-emitting units 20 at different positions in the vertical direction can be adjusted, thereby improving the uniformity of the light-emitting wavelength of the LED structure in the display device, and further improving the light-emitting efficiency and light-emitting intensity of the LED light-emitting units 20.
[0046] In one embodiment, Figure 3 FIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure. Figure 3 As shown, the thicknesses of the ion implantation regions 30 at different positions in the horizontal direction are different, and the wavelengths of the LED light emitting units 20 at different positions in the horizontal direction can also be adjusted.
[0047] In one embodiment, along the direction from the first semiconductor layer 21 to the second semiconductor layer 23, the variation trend of the passivation ion doping concentration is uniform, linear, periodic or step-wise, and the variation trend of the stress regulation ion doping concentration is uniform, linear, periodic or step-wise. By changing the passivation ion doping concentration, the electrical isolation effect of the ion implantation region 30 in the vertical direction can be adjusted to improve the isolation effect between the LED light-emitting units 20. By changing the stress regulation ion doping concentration, the lattice constant of the ion implantation region 30 in the vertical direction can be adjusted, thereby adjusting the compressive stress applied by the ion implantation region 30 to the side wall of the LED light-emitting unit 20, thereby adjusting the wavelength of the LED structure, and then improving the wavelength uniformity of the LED structure.
[0048] In one embodiment, Figure 4 FIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure. Figure 4As shown, the ion implantation region 30 includes a passivation ion implantation region 31 and a stress regulation ion implantation region 32. The passivation ion implantation region 31 surrounds the LED light-emitting unit 20, and the stress regulation ion implantation region 32 surrounds the passivation ion implantation region 31. The material of the passivation ion implantation region 31 includes the material of the LED light-emitting unit 20 and the passivation ions, and the material of the stress regulation ion implantation region 32 includes the material of the LED light-emitting unit 20 and the stress regulation ions. The passivation ion implantation region 31 electrically isolates two adjacent LED light-emitting units 20 from each other, thereby avoiding sidewall etching damage caused by the etching process and reducing the efficiency of the LED light-emitting unit. The stress regulation ion implantation region 32 increases the lattice constant of the III-V group nitride material, thereby making the lattice constant of the material of the ion implantation region 30 greater than the lattice constant of the material of the LED light-emitting unit 20, so that the ion implantation region 30 can apply compressive stress to the sidewall of the LED light-emitting unit 20, and adjust the wavelength of the LED structure by applying compressive stress, thereby improving the wavelength uniformity of the LED structure.
[0049] In one embodiment, Figure 5 FIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure. Figure 5 As shown, the LED structure further includes: a first electrode 1, electrically connected to the first semiconductor layer 21; a second electrode 2, electrically connected to the second semiconductor layer 23, and the first electrode 1 and the second electrode 2 can be located on both sides of the LED light-emitting unit 20. Taking the first semiconductor layer 21 as an N-type semiconductor layer and the second semiconductor layer 23 as a P-type semiconductor layer as an example, the first electrode 1 is an N-type electrode and the second electrode 2 is a P-type electrode. The material of the first electrode 1 and the material of the second electrode 2 can be selected from at least one of gold, silver, aluminum, chromium, nickel, platinum, and titanium.
[0050] According to another aspect of the present disclosure, Figure 6 FIG. 1 is a flow chart of a method for preparing an LED structure provided by an embodiment of the present disclosure. Figure 7-9 FIG. 1 is a schematic diagram of an LED structure provided by an embodiment of the present disclosure during the preparation process. Figure 6 As shown, a method for preparing an LED structure provided by an embodiment of the present disclosure includes the following steps:
[0051] Step S1: Figure 7 As shown, a first semiconductor layer 21 , a multi-quantum well layer 22 and a second semiconductor layer 23 are sequentially grown on a substrate 10 .
[0052] Step S2: Figure 8 As shown, a patterned mask layer 40 is disposed on the second semiconductor layer 23 , and the mask layer 40 has a plurality of openings 41 exposing the second semiconductor layer 23 .
[0053] Step S3: Fig. 9As shown, ion implantation is performed on one side of the second semiconductor layer 23 exposed by the opening 41, and passivation ions and stress regulation ions are implanted to form an ion implantation region 30 penetrating the second semiconductor layer 23, the multi-quantum well layer 22, and the first semiconductor layer 21, and an LED light-emitting unit 20 surrounded by the ion implantation region 30, wherein the material of the ion implantation region 30 includes the material of the LED light-emitting unit 20, the passivation ions, and the stress regulation ions. The mask layer 40 can be removed after the ion implantation step is completed.
[0054] In this embodiment, the first semiconductor layer 21, the multi-quantum well layer 22 and the second semiconductor layer 23 are group III-V nitride materials. By injecting passivating ions into the group III-V nitride materials, including at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, fluorine ions and argon ions, the group III-V nitride materials can be converted into isolation materials, thereby electrically isolating two adjacent LED light-emitting units 20 from each other, avoiding side wall etching damage caused by the etching process and reducing the efficiency of the LED light-emitting units. Injecting stress-regulating ions, including at least one of indium ions, aluminum ions, magnesium ions, germanium ions, tin ions, beryllium ions, zinc ions and cadmium ions, into the III-V nitride material can increase the lattice constant of the III-V nitride material, so that the lattice constant of the material of the ion implantation area 30 is greater than the lattice constant of the material of the LED light-emitting unit 20. By ion implantation, the lattice constants of the ion implantation areas 30 on the side walls of the LED light-emitting unit 20 located at different positions are made different, so that the ion implantation areas 30 can apply different compressive stresses to the side walls of the LED light-emitting unit 20, and the wavelength of the LED structure is adjusted by applying compressive stress, thereby improving the wavelength uniformity of the LED structure. The ion implantation method that makes the lattice constants of the ion implantation areas 30 at different positions of the side walls of the LED light-emitting unit 20 different can be to change the concentration of the implanted ions. The greater the concentration of the implanted ions, the greater the lattice constant of the material, and the greater the compressive stress applied to the side walls of the LED light-emitting unit 20. Alternatively, the type of the implanted ions can be changed, and different types of ions can be injected into the ion implantation areas 30 at different positions, thereby changing the lattice constants of the ion implantation areas 30 at different positions. Applying stress to the side walls of the LED light-emitting unit 20 can also increase the hole concentration in the second semiconductor layer 23 of the LED structure, thereby increasing the number of holes injected into the multi-quantum well layer 22, reducing the number of electrons in the multi-quantum well layer 22 that have not been recombined with holes, and further reducing the number of electrons overflowing from the multi-quantum well layer 22 to the second semiconductor layer 23, reducing non-radiative recombination, and improving luminous efficiency and luminous intensity.
[0055] In one embodiment, the multi-quantum well layer 22 includes InGaN material, and the compressive stress applied by the ion implantation region 30 reduces the In content required when the LED light-emitting unit 20 emits light of the same wavelength, thereby reducing the lattice mismatch between InGaN and other materials in the multi-quantum well layer 22, and further improving the luminous efficiency.
[0056] In one embodiment, the thickness of the ion implantation region 30 is controlled by ion implantation, and the thickness of the ion implantation region 30 changes from bottom to top (eg Figures 2a to 2c ) or the thickness of the ion implantation region 30 at different positions in the horizontal direction is different (such as Figure 3 As shown), the wavelength of the LED light-emitting unit 20 at different positions can be adjusted to improve the uniformity of the light-emitting wavelength of the LED structure in the display device, and further improve the light-emitting efficiency and light-emitting intensity of the LED light-emitting unit 20.
[0057] In one embodiment, the doping concentration of the passivation ions and the stress control ions in the ion implantation area 30 is controlled by ion implantation. By changing the doping concentration of the passivation ions, the electrical isolation effect of the ion implantation area 30 in the vertical direction can be adjusted, thereby improving the isolation effect between the LED light-emitting units 20. By changing the doping concentration of the stress control ions, the lattice constant of the ion implantation area 30 in the vertical direction can be adjusted, thereby adjusting the compressive stress applied by the ion implantation area 30 to the side wall of the LED light-emitting unit 20, thereby adjusting the wavelength of the LED structure, and then improving the wavelength uniformity of the LED structure.
[0058] In one embodiment, Figure 4 As shown, passivation ions, including at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, fluorine ions and argon ions, are injected into the LED light-emitting unit 20 to form a passivation ion injection region 31, and stress regulation ions, including at least one of indium ions, aluminum ions, magnesium ions, germanium ions, tin ions, beryllium ions, zinc ions and cadmium ions, are injected to form a stress regulation ion injection region 32. The passivation ion injection region 31 surrounds the LED light-emitting unit 20, and the stress regulation ion injection region 32 surrounds the passivation ion injection region 31.
[0059] The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes an LED light-emitting unit, including a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, and an ion implantation region surrounding the LED light-emitting unit, wherein the material of the ion implantation region includes the material of the LED light-emitting unit, passivation ions, and stress regulation ions; the LED light-emitting unit is isolated by injecting passivation ions, thereby avoiding side wall etching damage caused by an etching process and reducing the efficiency of the LED light-emitting unit; the lattice constant of the material of the ion implantation region is increased by injecting stress regulation ions, so that the ion implantation region can apply compressive stress to the side wall of the LED light-emitting unit, and the wavelength of the LED structure is adjusted by applying the compressive stress, thereby improving the wavelength uniformity of the LED structure.
[0060] On the other hand, applying stress to the sidewall of the LED structure increases the hole concentration in the second semiconductor layer of the LED structure, thereby increasing the number of holes injected into the light-emitting layer, reducing the number of electrons in the multi-quantum well layer that have not been recombined with holes, and further reducing the number of electrons overflowing from the multi-quantum well layer to the second semiconductor layer, reducing non-radiative recombination, and improving luminous efficiency and luminous intensity; on the other hand, the multi-quantum well layer includes InGaN material, and the stress can be used to adjust the luminous wavelength. At the same time, the In content required when the LED light-emitting unit emits light of the same wavelength can be reduced, thereby reducing the lattice mismatch between InGaN and other materials in the light-emitting layer, and further improving the luminous efficiency. .
[0061] It should be understood that the term "including" and its variations used in the present disclosure are open inclusions, that is, "including but not limited to". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment". In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.
[0062] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.
Claims
1. An LED structure, characterized in that: include: An LED light-emitting unit (20) comprises a first semiconductor layer (21), a multi-quantum well layer (22) and a second semiconductor layer (23) which are stacked; An ion implantation region (30) surrounds the LED light-emitting unit (20), wherein the material of the ion implantation region (30) includes the material of the LED light-emitting unit (20), passivation ions, and stress regulation ions.
2. The LED structure according to claim 1, characterized in that: The thickness of the ion implantation area (30) is equal in width from bottom to top, increases linearly, decreases linearly, changes periodically, increases first and then decreases, increases in steps, and decreases in steps.
3. The LED structure according to claim 1, characterized in that: The thickness of the ion implantation regions (30) located at different positions in the horizontal direction is different.
4. The LED structure according to claim 1, characterized in that: The lattice constant of the material of the ion implantation region (30) is greater than the lattice constant of the material of the LED light emitting unit (20).
5. The LED structure according to claim 4, characterized in that: The lattice constants of the ion implantation regions (30) on the side walls of the LED light emitting unit (20) located at different positions in the vertical direction are different.
6. The LED structure according to claim 1, characterized in that: The passivation ions include at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, fluorine ions, and argon ions.
7. The LED structure according to claim 1, characterized in that: The stress regulating ions include at least one of indium ions, aluminum ions, magnesium ions, germanium ions, tin ions, beryllium ions, zinc ions and cadmium ions.
8. The LED structure according to claim 1, characterized in that: Along the direction from the first semiconductor layer (21) to the second semiconductor layer (23), the variation trend of the passivation ion doping concentration is uniform, linear, periodic or step-wise.
9. The LED structure according to claim 1, characterized in that: Along the direction from the first semiconductor layer (21) to the second semiconductor layer (23), the change trend of the stress-regulated ion doping concentration is uniform, linear, periodic or step-wise.
10. The LED structure according to claim 1, characterized in that: The ion implantation region (30) comprises a passivation ion implantation region (31) and a stress regulation ion implantation region (32); the passivation ion implantation region (31) surrounds the LED light-emitting unit (20), and the stress regulation ion implantation region (32) surrounds the passivation ion implantation region (31).
11. The LED structure according to claim 10, characterized in that: The material of the passivation ion implantation region (31) includes the material of the LED light-emitting unit (20) and passivation ions, and the material of the stress regulation ion implantation region (32) includes the material of the LED light-emitting unit (20) and stress regulation ions.
12. The LED structure according to claim 1, characterized in that: The material of the LED light-emitting unit (20) is III-V group nitride.
13. The LED structure according to claim 1, characterized in that: The LED structure further comprises: A first electrode (1), electrically connected to the first semiconductor layer (21); The second electrode (2) is electrically connected to the second semiconductor layer (23).
14. A method for preparing an LED structure, characterized in that: The following steps are involved: S1, sequentially growing a first semiconductor layer (21), a multi-quantum well layer (22), and a second semiconductor layer (23) on a substrate (10); S2, disposing a patterned mask layer (40) on the second semiconductor layer (23), wherein the mask layer (40) has a plurality of openings (41) exposing the second semiconductor layer (23); S3, performing ion implantation on the side of the second semiconductor layer (23) exposed in the opening (41), injecting passivation ions and stress regulation ions, forming an ion implantation region (30) penetrating the second semiconductor layer (23), the multi-quantum well layer (22) and the first semiconductor layer (21), and an LED light-emitting unit (20) surrounded by the ion implantation region (30), wherein the material of the ion implantation region (30) includes the material of the LED light-emitting unit (20), the passivation ions and the stress regulation ions.
15. The method for preparing an LED structure according to claim 14, characterized in that: The thickness of the ion implantation region (30) is controlled by the ion implantation method.
16. The method for preparing an LED structure according to claim 14, characterized in that: By means of the ion implantation, the lattice constants of the ion implantation areas (30) on the side walls of the LED light emitting unit (20) at different positions are different.
17. The method for preparing an LED structure according to claim 14, characterized in that: The doping concentration of the passivation ions and the stress regulating ions is controlled by the ion implantation method.
18. The method for preparing an LED structure according to claim 14, characterized in that: The passivation ions are injected into the LED light-emitting unit (20) to form a passivation ion injection region (31), and the stress regulation ions are injected to form a stress regulation ion injection region (32); the passivation ion injection region (31) surrounds the LED light-emitting unit (20), and the stress regulation ion injection region (32) surrounds the passivation ion injection region (31).