A hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method

Abstract

The present invention relates to a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method, wherein the hollow magnetron sputtering cathode comprises a shielding shell, and a target barrel, a magnet unit and a water cooling unit arranged inside the shielding shell; the shielding shell is a hollow tubular structure; the target barrel is an annular structure with a hollow area inside, which is located on a side close to the central axis of the shielding shell; the magnet unit comprises at least three magnet groups, which are arranged in an array between a side of the target barrel away from the hollow area and the shielding shell; the water cooling unit nests the magnet unit. The hollow magnetron sputtering cathode provided by the present invention realizes uniform coating of the surface of multi-dimensional complex structural components by the magnetron sputtering cathode by arranging the target barrel, the magnet unit and the water cooling unit inside the shielding shell and designing the structure of each component and its positional relationship, thereby optimizing the cathode coating quality and improving the cathode coating efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering coating, and in particular to a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method. Background Art

[0002] Magnetron sputtering cathode target technology has been significantly developed in recent years, promoting the progress of thin film material preparation. With the continuous development of electronic devices, optical components and energy devices, the demand for high-quality thin film materials continues to increase. Magnetron sputtering technology has become one of the mainstream methods in thin film deposition by forming a magnetic field near the target material, enhancing the density of the plasma, improving the sputtering efficiency and the adhesion of the deposited film.

[0003] In addition, with the advancement of computer simulation technology, the design and optimization of magnetron sputtering targets have also been greatly improved, making the distribution of magnetic field, plasma field and temperature field more uniform, effectively improving the stability of the deposition process and the quality of the film. In terms of technological progress, the design of magnetron sputtering cathode targets has gradually developed towards specialization and high target material utilization. In the future, the development of magnetron sputtering targets will continue to revolve around the preparation of high-performance films, especially in the application of three-dimensional parts with complex shapes and structures, deep grooves or depressions, such as aerospace parts, medical equipment, precision mechanical parts, etc., the design and manufacturing technology of magnetron sputtering targets will play a key role.

[0004] The design of magnetron sputtering cathode targets is mainly divided into planar targets and rotating cylindrical targets (tube targets) according to different application needs and equipment requirements.

[0005] Among them, the planar cathode target is the most common form of magnetron target, which is suitable for industrial large-area deposition. It generates plasma on a flat target surface through a magnetic field for sputtering. The planar cathode target has the advantages of simple structure, low manufacturing and maintenance costs, and is suitable for uniform thin film deposition on large-area substrates. For example, CN208545485U discloses a device for improving the uniformity of the magnetic field of a rectangular planar magnetron sputtering cathode target, including: a permanent magnet, a yoke, a fine-tuning device and a supporting component; the permanent magnet is fixed on the yoke, the supporting component is fixed in the magnetron sputtering chamber, a hole is opened on the supporting component, and the fine-tuning device contacts the yoke through the hole on the supporting component. The device overcomes the problem of uneven magnetic field distribution and inconvenient adjustment of the magnetron sputtering cathode target; and the structure is simple and easy to install.

[0006] The cylindrical target (tube target) is usually designed in a rotating form, and the target rotates around an axis to make the utilization rate of the target material higher. CN113174576A discloses a circular planar magnetron sputtering target with magnetic pole rotation, including a target base, which is a hollow cylindrical structure; a magnetic pole rotation system, which is arranged on the target base and movably connected to the target base; the magnetic pole rotation system is a rotatable structure; and a magnetic pole, which is arranged on the magnetic pole rotation system and is driven to rotate by the magnetic pole rotation system.

[0007] However, planar magnetron sputtering targets have problems such as insufficient plasma density, low sputtering efficiency, and low target material utilization, and are prone to saddle effect, resulting in uneven target material consumption. In addition, both planar cathode targets and cylindrical targets have the defect of being difficult to achieve complex three-dimensional component coating. This is because for traditional cathode targets, the sputtering of thin films on three-dimensional components requires the rotation function of components and magnetron targets, which requires high mechanical control accuracy, complex structure, and low average deposition rate. In addition, obtaining high-quality films requires additional heating of the deposited film. It is extremely difficult to rotate and heat three-dimensional components at the same time, and temperature uniformity is difficult to control. In short, the existing magnetron cathode target technology is not suitable for the coating of three-dimensional components and two-dimensional linear components.

[0008] Therefore, how to solve the problems of low sputtering efficiency, poor coating uniformity and difficulty in achieving uniform and effective coating of two-dimensional or three-dimensional complex components existing in traditional magnetron sputtering targets has become a problem that needs to be solved urgently. Summary of the invention

[0009] In order to solve the above technical problems, the purpose of the present invention is to provide a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method. The hollow magnetron sputtering cathode provided by the present invention can achieve uniform coating of two-dimensional linear structural components and three-dimensional structural components by arranging a target tube, a magnet unit and a water cooling unit inside a shielding shell and designing the structure and positional relationship of each unit component. At the same time, it can optimize the coating quality of the cathode and improve the coating efficiency of the cathode.

[0010] To achieve this object, the present invention adopts the following technical solutions:

[0011] In a first aspect, the present invention provides a hollow magnetron sputtering cathode, the hollow magnetron sputtering cathode comprising a shielding shell, and a target barrel, a magnet unit and a water cooling unit arranged inside the shielding shell;

[0012] The shielding shell is a hollow tubular structure;

[0013] The target barrel is an annular structure with a hollow area inside, and is located on one side close to the central axis of the shielding shell;

[0014] The magnet unit includes at least three magnet groups arranged in an array between a side of the target barrel away from the hollow area and the shielding shell;

[0015] The water cooling unit is nested with the magnet unit.

[0016] In the present invention, the "central axis of the shielding shell" refers to the line connecting the geometric centers of the two bottom surfaces of the shielding shell. Figure 2 The dotted line aa' in .

[0017] The hollow magnetron sputtering cathode provided by the present invention can achieve uniform coating of two-dimensional linear structural components and three-dimensional structural components by the magnetron sputtering cathode by arranging a target tube, a magnet unit and a water cooling unit inside a shielding shell and designing the structure and positional relationship of each unit component. At the same time, it can optimize the cathode coating quality and improve the cathode coating efficiency.

[0018] In the hollow magnetron sputtering cathode provided by the present invention, a shielding shell with a hollow tubular structure is provided, which has the function of forming a uniform magnetic field; the target barrel provided on the innermost side of the shielding shell is an annular structure with a hollow area, which can generate high-density plasma, and the electrons can be reflected multiple times in the hollow area of ​​the annular structure, thereby improving the coating uniformity of the parts to be coated placed inside the hollow area. The annular target barrel is provided, and sputtering coating can be performed around the parts, so that the coating material can be evenly deposited on various surfaces of the complex structural parts, ensuring the consistency and uniformity of the coating thickness; a magnet unit is provided between the outer side surface of the target barrel and the inner side surface of the shielding shell, and further The magnet unit is configured to form an array-arranged magnet group, so that the magnet group in the magnet unit can form a special magnetic field during operation, thereby forming closed magnetic lines of force, which improves the ionization efficiency of the plasma and also obtains a uniform and high-density plasma, thereby increasing the ionization intensity of the plasma, thereby promoting the uniformity of the sputtering of the target barrel and improving the sputtering efficiency of the target barrel; a water cooling unit is arranged around the magnet unit to nest the magnet unit, which can effectively absorb the heat generated by the magnet unit during operation, thereby ensuring that the magnetic force in the hollow magnetron sputtering cathode will not be demagnetized after long-term operation, thereby improving the service life of the target material and maintaining the overall performance of the magnetron sputtering cathode.

[0019] Preferably, the target barrel includes a sputtering target material on a side close to the hollow region and a sputtering inner wall on a side away from the hollow region.

[0020] The sputtering target material in the target barrel of the present invention provides target material for the hollow magnetron sputtering cathode as the raw material for coating; the sputtering inner wall has the functions of supporting, conducting heat and providing an electric field.

[0021] Preferably, the sputtering inner wall is located on the outer side of the sputtering target, and the inner side of the sputtering inner wall is tightly fitted with the outer side of the sputtering target.

[0022] Preferably, the magnet unit is in contact with a side of the sputtering inner wall away from the sputtering target.

[0023] Preferably, a first target fixing component and a second target fixing component are respectively provided at the upper end and the lower end of the sputtering target, for fixing the sputtering target on the inner side of the shielding shell.

[0024] Preferably, the first target material fixing component and the second target material fixing component are coaxially arranged in an annular structure.

[0025] Preferably, the magnet set comprises two monopole magnets of opposite polarity.

[0026] The present invention adopts monopole magnets with opposite polarities to form a magnet group, which can optimize the polarity distribution inside the shielding shell. The magnet group composed of monopole magnets with opposite polarities can effectively form a complete and closed magnetic line of force, ensuring a high working gas ionization rate during magnetron sputtering.

[0027] Preferably, taking the direction along the bottom diameter of the shielding shell as the radial direction, in the magnet group, the two monopole magnets with opposite polarities are arranged in sequence along the radial direction.

[0028] Preferably, with the bottom surface direction of the shielding shell as the horizontal direction, the magnet groups are radially arranged in the horizontal direction inside the shielding shell.

[0029] Preferably, in the horizontal direction, the polarities of the monopole magnets on the same radial length are arranged alternately.

[0030] The present invention sets a radially arranged magnet group in the horizontal direction, obtains a closed-loop magnetic field in the horizontal direction, can sputter the parts to be coated in multiple directions, improve the sputtering uniformity of the cathode to the parts, and the segmented distribution can help the magnetic lines of force to be located inside the cathode and form a closed loop, thereby improving the sputtering efficiency and sputtering uniformity of the cathode device. In addition, the finer the segmentation of the magnet group between the target barrel and the shielding shell, the better the uniformity of the coating.

[0031] Preferably, taking the side direction of the shielding shell as a vertical direction, the magnet unit is provided with at least three layers of magnet groups arranged in the vertical direction.

[0032] The present invention arranges more than three layers of magnet groups in the vertical direction inside the shielding shell, which can form a continuous and closed magnetic field in the vertical direction inside the shielding shell, so that the magnetic lines of force can penetrate the surface of the coating material and are located inside the shielding shell, thereby reducing the outward emission of the magnetic field, thereby improving the ionization efficiency of the working gas and increasing the density of plasma per unit volume in the hollow area, ultimately making the sputtering efficiency of the target material on the component high and the sputtering uniformity good.

[0033] Preferably, each layer of the magnet groups in the vertical direction are arranged at equal intervals.

[0034] Preferably, in the magnet group arranged in the vertical direction, the polarities of the monopole magnets close to the target barrel are arranged alternately and at intervals, and the polarities of the monopole magnets away from the target barrel are arranged alternately and at intervals.

[0035] The present invention adopts an arrangement mode of alternately setting the polarity of monopole magnets in adjacent layers of monopole magnets, which has the function of effectively forming complete and closed magnetic lines of force, thereby ensuring a high ionization rate in the magnetron sputtering process.

[0036] The present invention realizes the formation of three-dimensional magnetic lines of force in the inner wall of the hollow magnetron sputtering target by specially designing the position, arrangement and number of magnet groups in the vertical and horizontal directions. This design is the key to realizing two-dimensional and three-dimensional complex layout coating.

[0037] Preferably, in the vertical direction and the horizontal direction inside the shielding shell, the polarities of adjacent monopole magnets are opposite.

[0038] Preferably, in the vertical direction and the horizontal direction inside the shielding shell, the magnetic forces of adjacent monopole magnets are unequal and / or equal.

[0039] Preferably, in the vertical direction inside the shielding shell, the total number of layers of the magnet groups in which the magnet units are arranged is an odd number.

[0040] In the present invention, "the total number of layers of the magnet group is an odd number" means that in the vertical direction, the total number of layers of the magnet group can be selected from odd numbers such as 3, 5, 7, 9, 11, 13, 15 or 17.

[0041] Preferably, in the vertical direction inside the shielding shell, the layers of the magnet group with a total number of odd layers are numbered in sequence as 1, 2, 3...n, and among the monopole magnets close to the target barrel side, the magnetic force of the monopole magnets with odd numbers is greater than the magnetic force of the monopole magnets with even numbers.

[0042] In the present invention, the "magnetic force of the odd-numbered monopole magnets is greater than the magnetic force of the even-numbered monopole magnets" means that in the vertical direction, the layers of the magnet group are numbered in sequence from top to bottom or from bottom to top, and among the monopole magnets close to the target barrel side, the magnetic force of the monopole magnets numbered 1, 3, 5, 7, 9, 13, 15 or 17 is greater than the magnetic force of the monopole magnets numbered 2, 4, 6, 8, 10, 12, 14 or 16.

[0043] Preferably, in the vertical direction inside the shielding shell, the layers of the magnet group with an odd total number of layers are numbered in sequence as 1, 2, 3...n, and among the monopole magnets close to the target barrel side, the magnetic force of the monopole magnets with odd numbers is greater than 40-60% of the magnetic force of the monopole magnets with even numbers, for example 40%, 42%, 44%, 46%, 48%, 50%, 52%, 54%, 56%, 58% or 60%, etc.

[0044] The present invention's design of different magnetic forces of different monopole magnets can further improve the coating effect of magnetron sputtering cathode on two-dimensional linear structural components and three-dimensional structural components. The present invention further regulates the relative magnitude of the magnetic forces of monopole magnets arranged in different layers close to one side of the target barrel in the vertical direction, forming a fully enclosed non-equilibrium magnetic field between the surface of the coating material and the inner wall of the target material, so that the ionization efficiency of the working gas is improved, and the plasma density per unit volume is increased, thereby improving the deposition rate and deposition uniformity of the film; further, the magnetic force of the monopole magnets with even-numbered layers is selected to be smaller than the magnetic force of the monopole magnets with odd-numbered layers, so that a magnetic field composed of magnetic lines of force that gather toward the middle and are vertically closed on the sides is formed between the magnets of each layer, forming an inwardly gathered and side-vertical non-equilibrium magnetic field, thereby avoiding the outward divergence of the target material, improving the utilization rate of the target material, and at the same time improving the deposition rate and deposition uniformity of the film.

[0045] In the present invention, there is no specific limitation on the design of the magnetic force of the monopole magnet away from the target barrel side in the vertical direction inside the shielding shell. Optionally, along the radial direction, the magnetic forces of two monopole magnets in the same magnet group are the same.

[0046] In the present invention, there is no specific limitation on the adjacent monopole magnets in the horizontal direction inside the shielding shell. Optionally, the magnetic forces of adjacent monopole magnets in the same radial length are different.

[0047] Preferably, the magnet group includes an S-pole magnet and an N-pole magnet.

[0048] Preferably, in the horizontal direction, the magnet groups are arranged at equal angular intervals.

[0049] Preferably, the structure of the monopole magnet is a cylinder, and the bottom surface of the monopole magnet is parallel to the bottom surface of the shielding shell.

[0050] Preferably, the water cooling unit comprises a cooling water storage tank, and a cooling water inlet channel and a cooling water outlet channel located on a side of the cooling water storage tank away from the magnet unit.

[0051] Preferably, the cooling water storage tank is a multi-channel annular nested structure.

[0052] Preferably, inside the shielding shell, the magnet groups along the radial direction are all located between the channels of the cooling water reservoir, and the channels of the cooling water reservoir are provided between the magnet groups along the radial direction.

[0053] The present invention sets a cooling water storage tank with a multi-channel annular structure to nest around each magnet group, which can effectively realize the absorption of heat generated by the cooling water during the operation of the magnet unit, thereby ensuring that the magnetic force in the hollow magnetron sputtering cathode will not be demagnetized after a long period of operation, thereby improving the service life of the target material and maintaining the overall performance of the magnetron sputtering cathode. In addition, the cooling water storage tank is set inside the hollow magnetron sputtering cathode to avoid direct contact between the cooling water and the magnet, thereby alleviating the rust and corrosion of the magnet.

[0054] Preferably, the channel end of the cooling water storage tank close to the target barrel is in contact with a side of the target barrel away from the hollow area.

[0055] The present invention makes the channel end of the cooling water storage tank contact and connect with the side of the target tube away from the hollow area, thereby increasing the cooling area of ​​the cooling water storage tank for the magnet group and achieving better cooling effect.

[0056] Preferably, the cooling water storage tank and the target tube surround the magnet group.

[0057] Preferably, the cooling water inlet channel is connected to a side surface of the shielding shell and extends to the outside of the shielding shell.

[0058] Preferably, the cooling water outlet channel is connected to a side surface of the shielding shell and extends to the outside of the shielding shell.

[0059] Preferably, the hollow magnetron sputtering cathode also includes a power supply interface.

[0060] Preferably, the power interface is fixed to and communicated with a side surface of the shielding shell and extends to the outside of the shielding shell.

[0061] Preferably, one end of the power interface located inside the shielding shell is in contact with a side of the target barrel away from the hollow area.

[0062] In a second aspect, the present invention provides a magnetron sputtering coating device, which includes the hollow magnetron sputtering cathode described in the first aspect, and the hollow magnetron sputtering cathode is an annular cylindrical structure with a hollow area inside.

[0063] The magnetron sputtering coating device provided by the present invention adopts a specific hollow magnetron sputtering cathode with an annular cylindrical structure having a hollow area. The cathode target has a three-dimensional uniform magnetic field, thereby being able to achieve uniform coating of multi-dimensional complex structural components and improve the sputtering quality and sputtering efficiency of the device for complex structural components.

[0064] Preferably, the magnetron sputtering coating device further comprises a vacuum chamber, and a wire unwinding roller and a wire collecting roller located inside the vacuum chamber.

[0065] Preferably, the hollow magnetron sputtering cathode is located in the vacuum chamber and is fixed inside the vacuum chamber via a fixed shaft.

[0066] Preferably, the fixing shaft for fixing the hollow magnetron sputtering cathode comprises a flange fixing shaft.

[0067] Preferably, the hollow magnetron sputtering cathode is located between the wire unwinding roller and the wire collecting roller.

[0068] Preferably, taking the side direction of the shielding shell as the vertical direction, the wire unwinding roller and the wire collecting roller are respectively located at the upper end and the lower end of the hollow magnetron sputtering cathode in the vertical direction.

[0069] The present invention arranges a hollow magnetron sputtering cathode between a wire-releasing roller and a wire-collecting roller, and uses the wire-releasing roller and the wire-collecting roller to fix the two ends of the component to be coated, so that the component to be coated is placed in the inner hollow area of ​​the hollow magnetron sputtering cathode. On the basis of the equipment not rotating, the cathode with an annular cylindrical structure performs surrounding sputtering coating on the surface of the component to be coated, thereby realizing effective coating of the surface of multi-dimensional complex structural components by the magnetron sputtering coating device, and at the same time, it can improve the coating efficiency and adhesion of the device.

[0070] Preferably, the magnetron sputtering coating device further includes a cathode power supply.

[0071] Preferably, the cathode power supply is connected to a power supply interface in the hollow magnetron sputtering cathode via a fixed shaft.

[0072] Preferably, the magnetron sputtering coating device further comprises a servo motor located outside the vacuum chamber.

[0073] Preferably, the servo motor comprises a first servo motor and a second servo motor, which are used to drive the wire unwinding roller and the wire collecting roller to rotate.

[0074] Preferably, the first servo motor is connected to the wire-releasing roller to drive the wire-releasing roller to rotate.

[0075] Preferably, the second servo motor is connected to the wire collecting roller to drive the wire collecting roller to rotate.

[0076] The present invention uses a servo motor to drive the wire unwinding roller and the wire collecting roller to rotate, so that the fixed parts to be coated between the two can move, which can improve the coating efficiency and coating uniformity of the device for coating parts with complex structures and realize continuous coating.

[0077] Preferably, the magnetron sputtering coating device further includes a vacuum gauge, a pump group and a control valve.

[0078] Preferably, the vacuum gauge is fixed to and connected to the vacuum chamber, and is used to measure the vacuum degree of the vacuum chamber.

[0079] Preferably, the pump group includes a molecular pump and a mechanical pump.

[0080] Preferably, the molecular pump is located outside the vacuum chamber and is connected to the inside of the vacuum chamber through a first connecting channel.

[0081] Preferably, the mechanical pump is located outside the vacuum chamber, wherein one side is connected to the molecular pump through a second connecting channel, and the other side is connected to the inside of the vacuum chamber through a third connecting channel.

[0082] Preferably, the control valve comprises a front-stage valve, a bypass valve and a flow limiting valve.

[0083] Preferably, the flow limiting valve is arranged between the vacuum chamber and the molecular pump, and is used to adjust the working gas pressure in the vacuum chamber.

[0084] Preferably, the bypass valve is disposed between the vacuum chamber and the mechanical pump, and is used to evacuate the vacuum chamber.

[0085] Preferably, the front-stage valve is arranged between the molecular pump and the mechanical pump, and is used to evacuate the vacuum chamber.

[0086] In a third aspect, the present invention provides a magnetron sputtering coating method based on the magnetron sputtering coating device according to the second aspect, the magnetron sputtering coating method comprising the following steps:

[0087] The component to be coated is placed in the hollow area of ​​a hollow magnetron sputtering cathode, and the surface of the component to be coated is coated with the hollow magnetron sputtering cathode to obtain a thin film on the surface to be coated.

[0088] The present invention places the component to be coated in the hollow area inside the hollow magnetron sputtering cathode for coating, and can perform sputtering coating on the surface of the component to be coated in all directions, thereby improving the sputtering uniformity of the component to be coated; at the same time, because the hollow magnetron cathode target designed by the present invention has a three-dimensional and uniform magnetic field, it can generate uniform plasma. Under the action of the electric field, the plasma can heat the component to be coated, thereby enhancing the uniformity of the coating material on the surface of the component and enhancing the adhesion of the coating material to the component. The hollow magnetron sputtering cathode used has high ionization intensity and high ionization rate of the target material, thereby making the sputtering coating process efficient.

[0089] Preferably, the structure of the component to be coated includes a two-dimensional linear structure or a three-dimensional structure.

[0090] The hollow magnetron sputtering cathode used in the magnetron sputtering coating method provided by the present invention can be flexibly applied to the sputtering coating process of component materials of various complex configurations by adjusting the positional relationship between the cathode target material and various components. In addition, the specific component design of the cathode can enable it to maintain efficient and high-quality coating effects when processing components with complex structures and rich details.

[0091] Preferably, the component to be coated is fixed in the hollow area of ​​the hollow magnetron sputtering cathode by means of a wire unwinding roller and a wire collecting roller.

[0092] Preferably, before using the hollow magnetron sputtering cathode for coating, the vacuum chamber is evacuated.

[0093] Preferably, the background vacuum degree of the vacuum chamber after evacuation is 8×10 -5 -8×10 -4 Pa, for example 8×10 -5 Pa, 9×10 -5 Pa, 1×10 -4 Pa, 2×10 -4 Pa, 3×10 -4 Pa, 4×10 -4 Pa, 5×10 -4 Pa, 6×10 -4 Pa, 7×10 -4 Pa or 8×10 -4 Pa et al.

[0094] Preferably, during the coating process, the wire unwinding roller and the wire collecting roller rotate synchronously.

[0095] Preferably, the coating process further includes passing cooling water into a water cooling unit of the hollow magnetron sputtering cathode.

[0096] Preferably, the rotation speed of the unwinding roller and the collecting roller is 10-15 rpm, for example, 10 rpm, 11 rpm, 12 rpm, 13 rpm, 14 rpm or 15 rpm.

[0097] Preferably, during the coating process, working gas is also introduced.

[0098] In the present invention, working gas is introduced during the coating process to bombard the target material to form target atoms.

[0099] Preferably, during the coating process, a reaction gas is also introduced.

[0100] In the present invention, the introduced reaction gas can react with the bombarded target atoms to achieve the preparation and deposition of the compound film.

[0101] Preferably, the working gas comprises argon.

[0102] Preferably, during the coating process, the flow rate of the working gas is 15-30 sccm, for example, 15 sccm, 18 sccm, 21 sccm, 24 sccm, 27 sccm or 30 sccm.

[0103] Preferably, the reaction gas comprises nitrogen and / or oxygen.

[0104] Preferably, during the coating process, the flow rate of the reaction gas is 5-60sccm, for example, 5sccm, 10sccm, 15sccm, 20sccm, 25sccm, 30sccm, 35sccm, 40sccm, 45sccm, 50sccm, 55sccm or 60sccm, etc.

[0105] Preferably, during the coating process, the working vacuum degree of the vacuum chamber is 0.5-2.0 Pa, such as 0.5 Pa, 0.8 Pa, 1.1 Pa, 1.4 Pa, 1.7 Pa or 2.0 Pa.

[0106] Preferably, during the coating process, the current of the cathode power supply connected to the hollow magnetron sputtering cathode is 0.5-5.0A, for example, 0.5A, 1.0A, 1.5A, 2.0A, 2.5A, 3.0A, 3.5A, 4.0A, 4.5A or 5.0A, etc.

[0107] Preferably, during the coating process, the pulse frequency of the hollow magnetron sputtering cathode is 1000-8000 Hz, for example, 1000 Hz, 2000 Hz, 3000 Hz, 4000 Hz, 5000 Hz, 6000 Hz, 7000 Hz or 8000 Hz.

[0108] Preferably, during the coating process, the duty cycle of the hollow magnetron sputtering cathode is 10-90%, for example, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80% or 90%.

[0109] Compared with the prior art, the present invention has at least the following beneficial effects:

[0110] (1) The hollow magnetron sputtering cathode provided by the present invention can realize a three-dimensional annular uniform magnetic field by arranging a target tube, a magnet unit and a water cooling unit inside a shielding shell, and designing the structure and positional relationship of each unit component, thereby realizing a three-dimensional uniform plasma distribution, and finally realizing a surround-type three-dimensional uniform coating of the magnetron sputtering cathode on the surface of two-dimensional linear structures and three-dimensional structural components. At the same time, it can optimize the cathode coating quality and improve the cathode coating efficiency.

[0111] (2) The magnetron sputtering coating device provided by the present invention adopts a specific hollow magnetron sputtering cathode with a ring-shaped cylindrical structure having a hollow area. The cathode target has a three-dimensional uniform magnetic field, thereby being able to achieve uniform coating of multi-dimensional complex structural components and improve the sputtering quality and sputtering efficiency of the device for complex structural components.

[0112] (3) The present invention places the component to be coated in the hollow area inside the hollow magnetron sputtering cathode for coating, and can perform sputtering coating on the component to be coated in all directions, thereby improving the sputtering uniformity of the component to be coated, enhancing the uniformity of the coating material on the component, and increasing the adhesion of the coating material to the component. The hollow magnetron sputtering cathode used has a high ionization intensity and a high ionization rate for the target material, thereby making the sputtering coating process efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0113] Figure 1 It is a schematic structural diagram of the magnetron sputtering coating device provided in Example 1 of the present invention.

[0114] Figure 2 It is a schematic diagram of the main cross-section of the hollow magnetron sputtering cathode provided in Example 1 of the present invention.

[0115] Figure 3 It is a top view cross-sectional schematic diagram of the hollow magnetron sputtering cathode provided in Example 1 of the present invention.

[0116] Among them, 1, vacuum chamber; 2, hollow magnetron sputtering cathode; 201, shielding shell; 202, target tube; 202-1, sputtering target; 202-2, sputtering inner wall; 203, magnet unit; 204, water cooling unit; 204-1, cooling water storage tank; 204-2, cooling water inlet channel; 204-3, cooling water outlet channel; 205, target fixing component; 205-1, first target fixing component; 205-2, second target fixing component; 206, power interface; aa', center axis of shielding shell; 3, wire unwinding roller; 4, wire collecting roller; 5, cathode power supply; 6, servo motor; 601, first servo motor; 602, second servo motor; 7, molecular pump; 8, mechanical pump; 9, current limiting valve; 10, bypass valve; 11, front stage valve; 12, cathode fixed shaft; 13, vacuum gauge.

[0117] Figure 4 This is a scanning electron microscope image of the copper film deposited on the nickel fiber filament provided in Example 1 of the present invention. DETAILED DESCRIPTION

[0118] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and through specific implementation methods. However, the following examples are only simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the claims.

[0119] Example 1

[0120] The present embodiment provides a magnetron sputtering coating device including a vacuum chamber 1, a hollow magnetron sputtering cathode 2, a wire unwinding roller 3 and a wire collecting roller 4 located inside the vacuum chamber 1, a cathode power supply 5, a servo motor 6, a molecular pump 7, a mechanical pump 8, a current limiting valve 9, a bypass valve 10 and a front valve 11 located outside the vacuum chamber 1, and a cathode fixing shaft 12 and a vacuum gauge 13 fixed on the vacuum chamber 1. The specific structural schematic diagram is shown in FIG. Figure 1 As shown, in order to facilitate the observation of the position structure of each component, Figure 1 The structures of the hollow magnetron sputtering cathode 2 and other components are simplified.

[0121] Specifically, the hollow magnetron sputtering cathode 2 is an annular cylindrical structure with a hollow area inside, which is located between the wire-releasing roller 3 and the wire-collecting roller 4. The center line of the wire-releasing roller 3 and the wire-collecting roller 4 is located in the hollow area of ​​the hollow magnetron sputtering cathode 2. With the side direction of the shielding shell 201 as the vertical direction, the wire-releasing roller 3 and the wire-collecting roller 4 are respectively located at the upper and lower ends of the hollow magnetron sputtering cathode 2 in the vertical direction; the hollow magnetron sputtering cathode 2 is fixed in the vacuum chamber 1 by a cathode fixing shaft 12, and the cathode fixing shaft 12 is a flange fixing shaft, which is fixed and connected to the vacuum chamber 1; the cathode power supply 5 is connected to the hollow magnetron sputtering cathode 2 by the cathode fixing shaft 12; the servo motor 6 includes a first servo motor 6 01 and the second servo motor 602, the first servo motor 601 is connected to the wire-releasing roller 3, and is used to drive the wire-releasing roller 3 to rotate, the second servo motor 602 is connected to the wire-collecting roller 4, and is used to drive the wire-collecting roller 4 to rotate; the molecular pump 7 is connected to the interior of the vacuum chamber 1 through the first connecting channel, one side of the mechanical pump 8 is connected to the molecular pump 7 through the second connecting channel, and the other side is connected to the interior of the vacuum chamber 1 through the third connecting channel; the flow limiting valve 9 is arranged between the vacuum chamber 1 and the molecular pump 7, the bypass valve 10 is arranged between the vacuum chamber 1 and the mechanical pump 8, and the front-stage valve 11 is arranged between the molecular pump 7 and the mechanical pump 8; the vacuum gauge 13 is fixed and connected to the vacuum chamber 1.

[0122] The hollow magnetron sputtering cathode 2 includes a shielding shell 201, a target tube 202 located inside the shielding shell 201, a magnet unit 203, a water cooling unit 204, a target material fixing component 205 and a power supply interface 206. The schematic diagram of the main cross-section of the specific structure is shown in FIG. Figure 2 The top view of the structure is shown in Figure 3 shown.

[0123] The shielding shell 201 is a hollow tubular structure.

[0124] The target barrel 202 is an annular structure with a hollow area inside, which is located on the side close to the central axis aa' of the shielding shell, and includes a sputtering target 202-1 of an annular structure with a hollow area inside and a sputtering inner wall 202-2, the sputtering target 202-1 is close to the side of the hollow area, the sputtering inner wall 202-2 is away from the side of the hollow area, the sputtering inner wall 202-2 is located on the outer side of the sputtering target 202-1, and the inner side of the sputtering inner wall 202-2 is aligned with the outer side of the sputtering target 202-1. The sides fit tightly, and the upper and lower ends of the sputtering target 202-1 are respectively provided with a first target fixing component 205-1 and a second target fixing component 205-2, which are used to fix the sputtering target 202-1 on the inner side of the shielding shell 201. The first target fixing component 205-1 and the second target fixing component 205-2 are coaxially arranged in an annular structure. The sputtering target 202-1 is made of metallic copper with a purity of 99.99%, and its inner diameter is 45 mm and its outer diameter is 50 mm.

[0125] The magnet unit 203 includes 112 magnet groups, which are arranged in an array between the side surface of the target barrel 202 away from the hollow area and the inner side surface of the shielding shell 201 in the horizontal and vertical directions. The magnet group includes two monopole magnets with opposite polarities, namely an N-pole magnet and an S-pole magnet. The direction along the bottom diameter of the shielding shell 201 is the radial direction. In the magnet group, the N-pole magnet and the S-pole magnet are arranged in sequence along the radial direction on the outer side of the target barrel 202 away from the hollow area. The bottom surface direction of the shielding shell 201 is the horizontal direction. The magnet groups are radially arranged at equal angles in the horizontal direction inside the shielding shell 201. In the horizontal direction, 16 pairs of magnet groups are arranged in each layer. In the horizontal direction, the polarities of the monopole magnets of the same radial length are alternately arranged. The side direction of the shielding shell 201 is the vertical direction. The magnet unit 203 is arranged in the vertical direction with equal spacing. The invention discloses a 7-layer magnet group. In the magnet group arranged in the vertical direction, the polarities of the monopole magnets close to the target barrel 202 are arranged alternately, and the polarities of the monopole magnets away from the target barrel 202 are arranged alternately. The structure of the monopole magnet is a cylinder. The bottom surface of the monopole magnet is parallel to the bottom surface of the shielding shell 201. In the vertical and horizontal directions inside the shielding shell 201, the polarities of adjacent monopole magnets are opposite. In the vertical direction inside the shielding shell 201, the magnetic force of the N-pole magnet close to the target barrel 202 is greater than 50% of the magnetic force of the S-pole magnet, forming an unbalanced magnetic field design. The magnetic force of the S-pole magnet in the same magnet group in the vertical direction and along the radial direction is equal to the magnetic force of the N-pole magnet. In the horizontal direction inside the shielding shell 201, in the same radial length, the magnetic force of the N-pole magnet close to the target barrel 202 is greater than 50% of the magnetic force of the S-pole magnet, also forming an unbalanced magnetic field.

[0126] The water cooling unit 204 nests the magnet unit 203, including a cooling water reservoir 204-1, and a cooling water inlet channel 204-2 and a cooling water outlet channel 204-3 located on the side of the cooling water reservoir 204-1 away from the magnet unit 203. The cooling water reservoir 204-1 is a multi-channel annular nested structure. In the vertical direction inside the shielding shell 201, each layer of magnet groups is located between the channels of the cooling water reservoir 204-1, and channels of the cooling water reservoir 204-1 are provided between the magnet groups of each layer in the radial direction in the vertical direction. In the horizontal direction of the part, channels of cooling water storage tanks 204-1 are provided between the magnet groups along the radial direction, and the ends of each channel of the cooling water storage tanks 204-1 are in contact and connected with the side of the target barrel 202 away from the hollow area. In the vertical and horizontal directions, the cooling water storage tanks 204-1 and the target barrel 202 surround the magnet groups on all sides, the cooling water inlet channel 204-2 is connected to the side of the shielding shell 201 and extends to the outside of the shielding shell 201, and the cooling water outlet channel 204-3 is connected to the side of the shielding shell 201 and extends to the outside of the shielding shell 201.

[0127] The power interface 206 is fixed and connected to the side of the shielding shell 201 and extends to the outside of the shielding shell 201. One end of the power interface 206 located inside the shielding shell 201 is in contact and connected with the side of the target barrel 202 away from the hollow area, and one end of the power interface 206 located outside the shielding shell 201 is connected to the cathode power supply 5 through the cathode fixed shaft 12.

[0128] This embodiment also provides a magnetron sputtering method based on the above magnetron sputtering coating device, comprising the following steps:

[0129] (1) A nickel fiber wire with a diameter of 15 μm to be coated is fixed on a wire unwinding roller, and its free end passes through the hollow area inside the hollow magnetron sputtering cathode and is then fixed on a wire collecting roller.

[0130] (2) Open the bypass valve, fore valve and flow limiting valve, evacuate the vacuum chamber using the mechanical pump and molecular pump, and turn on the vacuum gauge of the vacuum chamber to evacuate until the background vacuum of the vacuum chamber is 8×10 -5 Pa, using argon with a purity of 99.999% as the working gas, setting the flow rate of the working gas to 20sccm, and adjusting the working vacuum to 1Pa; and, continuously flowing the cooling water through the cooling water inlet channel to each channel of the cooling water storage tank and then flowing out through the cooling water outlet channel.

[0131] (3) A high-power pulsed DC power supply is used as a cathode power supply and connected to the power interface of the hollow magnetron sputtering cathode. A servo motor is used to rotate the wire unwinding roller and the wire collecting roller synchronously. The speed is controlled to be 12 rpm. The power supply current of the coating process is set to 0.8 A, the pulse frequency is 6000 Hz, and the duty cycle is 50%. A metal copper target with a purity of 99.99% is used to sputter the nickel fiber wire to be coated, and a copper film is deposited on the nickel fiber wire.

[0132] Example 2

[0133] The difference between this embodiment and embodiment 1 is that the magnetron sputtering method based on the magnetron sputtering coating device provided in this embodiment includes the following steps:

[0134] (1) A nickel fiber wire with a diameter of 15 μm to be coated is fixed on a wire unwinding roller, and its free end passes through the hollow area inside the hollow magnetron sputtering cathode and is then fixed on a wire collecting roller.

[0135] (2) Open the bypass valve, fore valve and flow limiting valve, evacuate the vacuum chamber using the mechanical pump and molecular pump, and turn on the vacuum gauge of the vacuum chamber to evacuate until the background vacuum of the vacuum chamber is 8×10 -4 Pa, using argon with a purity of 99.999% as the working gas, setting the flow rate of the working gas to 20sccm, and adjusting the working vacuum to 1Pa; and, continuously flowing the cooling water through the cooling water inlet channel to each channel of the cooling water storage tank and then flowing out through the cooling water outlet channel.

[0136] (3) A high-power pulsed DC power supply is used as a cathode power supply and connected to the power interface of the hollow magnetron sputtering cathode. A servo motor is used to rotate the wire unwinding roller and the wire collecting roller synchronously. The speed is controlled to be 10 rpm. The power supply current of the coating process is set to 1 A, the pulse frequency is 8000 Hz, and the duty cycle is 50%. A metal copper target with a purity of 99.99% is used to sputter-coat the nickel fiber wire to be coated, and a copper film is deposited on the nickel fiber wire.

[0137] Example 3

[0138] The difference between this embodiment and embodiment 1 is that the magnetron sputtering method based on the magnetron sputtering coating device provided in this embodiment includes the following steps:

[0139] (1) A nickel fiber wire with a diameter of 15 μm to be coated is fixed on a wire unwinding roller, and its free end passes through the hollow area inside the hollow magnetron sputtering cathode and is then fixed on a wire collecting roller.

[0140] (2) Open the bypass valve, fore valve and flow limiting valve, evacuate the vacuum chamber using the mechanical pump and molecular pump, and turn on the vacuum gauge of the vacuum chamber to evacuate the chamber until the background vacuum of the vacuum chamber is 5×10 -4 Pa, using argon with a purity of 99.999% as the working gas, setting the flow rate of the working gas to 20sccm, and adjusting the working vacuum to 1Pa; and, continuously flowing the cooling water through the cooling water inlet channel to each channel of the cooling water storage tank and then flowing out through the cooling water outlet channel.

[0141] (3) A high-power pulsed DC cathode power supply is used as a cathode power supply and connected to the power interface of the hollow magnetron sputtering cathode. A servo motor is used to rotate the wire unwinding roller and the wire collecting roller synchronously. The speed is controlled to be 15 rpm. The power supply current of the coating process is set to 0.5 A, the pulse frequency is 4000 Hz, and the duty cycle is 50%. A metal copper target with a purity of 99.99% is used to sputter the nickel fiber wire to be coated, and a copper film is deposited on the nickel fiber wire.

[0142] Example 4

[0143] The difference between this embodiment and the first embodiment is that in the magnetron sputtering coating device provided in this embodiment, the side direction of the shielding shell 201 is the vertical direction, and the magnet unit 203 is arranged in the vertical direction with two layers of magnet groups of the same structure distributed at intervals, and the total height of the magnet group in the vertical direction remains unchanged. The rest of the contents are the same as those in the first embodiment.

[0144] Example 5

[0145] The difference between this embodiment and the first embodiment is that in the magnetron sputtering coating device provided in this embodiment, the side direction of the shielding shell 201 is taken as the vertical direction, the magnet unit 203 is arranged in the vertical direction to form a layer of magnet groups located in the middle area, and the total height of the magnet groups in the vertical direction remains unchanged. The rest of the contents are the same as those in the first embodiment.

[0146] Example 6

[0147] The difference between this embodiment and embodiment 1 is that in the magnetron sputtering coating device provided by this embodiment, with the bottom surface direction of the shielding shell 201 as the horizontal direction, each layer of magnet groups has 6 pairs of magnet groups arranged radially at equal angles. The rest of the contents are the same as embodiment 1.

[0148] Example 7

[0149] The difference between this embodiment and embodiment 1 is that: in the magnetron sputtering coating device provided in this embodiment, the bottom surface direction of the shielding shell 201 is the horizontal direction, each layer of the magnet group is arranged in a hollow ring structure, each layer of the magnet group includes an N-pole monopole ring magnet and an S-pole monopole ring magnet, and the polarities of the monopole magnets of adjacent magnet groups are arranged alternately. The rest of the contents are the same as those of embodiment 1.

[0150] Example 8

[0151] The difference between this embodiment and the first embodiment is that in the magnetron sputtering coating device provided in this embodiment, the magnetic force of the S-pole magnets arranged at any position is equal to the magnetic force of the N-pole magnets. The rest of the contents are the same as the first embodiment.

[0152] Example 9

[0153] The difference between this embodiment and embodiment 1 is that in the magnetron sputtering coating device provided in this embodiment, in the vertical direction inside the shielding shell 201, the magnetic force of the S-pole magnet near the target barrel 202 is greater than 50% of the magnetic force of the N-pole magnet, the magnetic force of the S-pole magnet in the same magnet group in the vertical direction and along the radial direction is equal to the magnetic force of the N-pole magnet, and in the horizontal direction inside the shielding shell 201, the magnetic force of the S-pole magnet near the target barrel 202 is greater than 50% of the magnetic force of the N-pole magnet in the same radial length. The rest of the contents are the same as those in embodiment 1.

[0154] Comparative Example 1

[0155] The difference between this comparative example and Example 1 is that the magnetron sputtering coating device provided in this comparative example omits the water cooling unit 204 in the hollow magnetron sputtering cathode 2. The rest of the contents are the same as those in Example 1.

[0156] The films deposited by the magnetron sputtering coating apparatus and the magnetron sputtering coating method provided in the above Examples 1-9 and Comparative Example 1 were subjected to the following tests:

[0157] (1) Thin film deposition rate: The thin film deposition rate is obtained by measuring the diameter of the nickel wire before and after coating and calculating the ratio of the increase in the nickel wire diameter thickness to the coating time.

[0158] (2) Average and standard deviation of the diameter of the product after coating: Select three different positions on the nickel fiber wire coated with copper film, measure its diameter, and calculate the average diameter and standard deviation of the diameter at the three positions on the fiber wire.

[0159] (3) Utilization rate of sputtering target: The utilization rate of sputtering target is obtained by calculating the ratio between the mass of coating material on the coating material surface and the mass of hollow magnetron target consumption.

[0160] The test results are shown in Table 1:

[0161] Table 1

[0162]

[0163] The test results show that:

[0164] (1) It can be seen from Examples 1 to 3 that the hollow magnetron sputtering cathode in the magnetron sputtering device provided by the present invention can achieve uniform coating of complex structural components by the magnetron sputtering cathode by arranging a target tube, a magnet unit and a water cooling unit inside the shielding shell and designing the structure and positional relationship of each unit component. At the same time, it can optimize the cathode coating quality and improve the cathode coating efficiency.

[0165] Figure 4 A scanning electron microscope image of the copper film deposited on the nickel fiber wire provided in Example 1 of the present invention is given. It can be seen from the image that the copper film plated on the surface of the nickel wire has good uniformity when the hollow magnetron cathode of the present invention is used for film plating.

[0166] (2) By comparing Example 1 with Examples 4-5, it can be seen that if the number of layers of the magnet group in the vertical direction of the magnet unit of the present invention is small, and two layers or even one layer of magnet group is used, the uniformity of the thin film will be deteriorated, the coating rate will be reduced, and the utilization rate of the sputtering target will also be reduced.

[0167] (3) By comparing Example 1 with Examples 6-7, it can be seen that if the number of pairs of magnet groups in the horizontal direction of each layer of the magnet unit of the present invention is small, the film deposition rate will be slowed down, the coating uniformity will be reduced, and the utilization effect of the sputtering target will be worse; if the magnet groups distributed at equal angles in each layer are replaced with annular magnet groups with different polarities, magnetic lines of force will not be generated in the horizontal direction, but only magnetic lines of force in the vertical direction will exist, resulting in unevenness in the radial direction of the film and uniformity in the vertical direction.

[0168] (4) By comparing Example 1 with Examples 8-9, it can be seen that in the present invention, if the magnetic forces of the monopole magnets at any position are the same, the magnetic field will easily diverge outward, resulting in a waste of sputtering targets and low target utilization. At the same time, the sputtering rate of the coating process decreases and the sputtering uniformity deteriorates. If in the vertical direction inside the shielding shell, in the monopole magnet close to one side of the target barrel, the magnetic force of the S-pole magnet is greater than the magnetic force of the N-pole magnet, that is, the magnetic force of the monopole magnet with an even number of layers is greater than the magnetic force of the monopole magnet with an odd number of layers, the magnetic field will diverge more outward during the magnetron sputtering coating process, causing the sputtering target to sputter outward, and the utilization rate will decrease more significantly. At the same time, the sputtering rate will decrease even more and the sputtering uniformity will be worse.

[0169] (5) By comparing Example 1 with Comparative Example 1, it can be seen that if the magnetron sputtering coating device provided by the present invention lacks a water cooling unit, the magnetron sputtering coating device cannot be started and operated after working for a period of time, and the magnetron sputtering coating process cannot be implemented.

[0170] In summary, the hollow magnetron sputtering cathode provided by the present invention can realize a three-dimensional annular uniform magnetic field by arranging a target tube, a magnet unit and a water cooling unit inside the shielding shell, and designing the structure of each unit component and its positional relationship, thereby realizing the distribution of three-dimensional uniform plasma, and finally realizing the surrounding three-dimensional uniform coating of the surface of complex structural components by the magnetron sputtering cathode. At the same time, it can optimize the cathode coating quality, improve the cathode coating efficiency and improve the utilization rate of the sputtering target.

[0171] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A hollow magnetron sputtering cathode, characterized in that: The hollow magnetron sputtering cathode comprises a shielding shell, and a target barrel, a magnet unit and a water cooling unit arranged inside the shielding shell; The shielding shell is a hollow tubular structure; The target barrel is an annular structure with a hollow area inside, and is located on one side close to the central axis of the shielding shell; The magnet unit includes at least three magnet groups arranged in an array between a side of the target barrel away from the hollow area and the shielding shell; Taking the bottom surface direction of the shielding shell as the horizontal direction, the magnet groups are radially arranged in the horizontal direction inside the shielding shell; Taking the side direction of the shielding shell as a vertical direction, the magnet unit is arranged with at least three layers of magnet groups in the vertical direction; The magnet group includes two monopole magnets with opposite polarities; Taking the direction along the bottom diameter of the shielding shell as the radial direction, in the magnet group, the two monopole magnets with opposite polarities are arranged in sequence along the radial direction; In the horizontal direction, the polarities of the monopole magnets on the same radial length are arranged alternately; In the magnet group arranged in the vertical direction, the polarities of the monopole magnets close to the target barrel are arranged alternately and at intervals, and the polarities of the monopole magnets away from the target barrel are arranged alternately and at intervals; In the vertical direction and the horizontal direction inside the shielding shell, the polarities of the adjacent monopole magnets are opposite; In the vertical direction inside the shielding shell, the total number of layers of the magnet groups in which the magnet units are arranged is an odd number; The structure of the monopole magnet is a cylinder; The water cooling unit nests the magnet unit; The water cooling unit comprises a cooling water storage tank, and a cooling water inlet channel and a cooling water outlet channel located on a side of the cooling water storage tank away from the magnet unit; The cooling water storage tank and the target tube surround the magnet unit.

2. The hollow magnetron sputtering cathode according to claim 1, characterized in that: The target barrel includes a sputtering target material on one side close to the hollow area and a sputtering inner wall on one side away from the hollow area; The sputtering inner wall is located on the outer side of the sputtering target, and the inner side of the sputtering inner wall is closely fitted with the outer side of the sputtering target; The magnet unit is in contact with a side of the sputtering inner wall away from the sputtering target; A first target fixing component and a second target fixing component are respectively provided at the upper end and the lower end of the sputtering target, for fixing the sputtering target on the inner side of the shielding shell; The first target material fixing component and the second target material fixing component are coaxially arranged in an annular structure.

3. The hollow magnetron sputtering cathode according to claim 1, characterized in that: In the vertical direction inside the shielding shell, the layers of the magnet group with an odd number of layers are numbered in sequence as 1, 2, 3...n, and among the monopole magnets close to the target barrel side, the magnetic force of the monopole magnets with odd numbers is greater than the magnetic force of the monopole magnets with even numbers.

4. The hollow magnetron sputtering cathode according to claim 3, characterized in that: In the vertical direction inside the shielding shell, the layers of the magnet group with an odd number of layers are numbered in sequence as 1, 2, 3...n, and among the monopole magnets close to the target barrel side, the magnetic force of the monopole magnets with odd numbers is 40-60% greater than the magnetic force of the monopole magnets with even numbers.

5. The hollow magnetron sputtering cathode according to claim 1, characterized in that: The cooling water storage tank is a multi-channel annular nested structure; The channel end of the cooling water storage tank close to the target barrel is in contact with the target barrel away from the hollow area. The cooling water inlet channel is connected to the side of the shielding shell and extends to the outside of the shielding shell; The cooling water outlet channel is communicated with a side surface of the shielding shell and extends to the outside of the shielding shell.

6. The hollow magnetron sputtering cathode according to claim 1, characterized in that: The hollow magnetron sputtering cathode also includes a power supply interface; The power interface is fixed and connected to the side of the shielding shell and extends to the outside of the shielding shell; One end of the power interface located inside the shielding shell is in contact with a side of the target barrel away from the hollow area.

7. A magnetron sputtering coating device, characterized in that: The magnetron sputtering coating device comprises a hollow magnetron sputtering cathode according to any one of claims 1 to 6, wherein the hollow magnetron sputtering cathode is an annular cylindrical structure having a hollow area inside.

8. The magnetron sputtering coating device according to claim 7, characterized in that: The magnetron sputtering coating device also includes a vacuum chamber, and a wire unwinding roller and a wire collecting roller located inside the vacuum chamber; The hollow magnetron sputtering cathode is located in the vacuum chamber and is fixed inside the vacuum chamber via a fixed shaft; The hollow magnetron sputtering cathode is located between the wire unwinding roller and the wire collecting roller; The magnetron sputtering coating device also includes a cathode power supply; The cathode power supply is connected to the power supply interface in the hollow magnetron sputtering cathode through a fixed shaft; The magnetron sputtering coating device also includes a servo motor located outside the vacuum chamber; The servo motor comprises a first servo motor and a second servo motor, which are used to drive the wire unwinding roller and the wire collecting roller to rotate.

9. A magnetron sputtering coating method based on the magnetron sputtering coating device according to claim 7 or 8, characterized in that: The magnetron sputtering coating method comprises the following steps: The component to be coated is placed in the hollow area of ​​a hollow magnetron sputtering cathode, and the surface of the component to be coated is coated with the hollow magnetron sputtering cathode to obtain a thin film on the surface of the component to be coated.

10. The magnetron sputtering coating method according to claim 9, characterized in that: The structure of the component to be coated includes a two-dimensional linear structure or a three-dimensional structure; The component to be coated is fixed in the hollow area of ​​the hollow magnetron sputtering cathode through a wire unwinding roller and a wire collecting roller; Before using the hollow magnetron sputtering cathode for film coating, the vacuum chamber is evacuated; The background vacuum degree of the vacuum chamber after evacuation is 8×10 -5 -8×10 -4 Pa; During the coating process, the wire unwinding roller and the wire collecting roller rotate synchronously; The coating process also includes passing cooling water into a water cooling unit of the hollow magnetron sputtering cathode.

11. The magnetron sputtering coating method according to claim 10, characterized in that: During the coating process, working gas is also introduced; During the coating process, the flow rate of the working gas is 15-30 sccm; During the coating process, the working vacuum degree of the vacuum chamber is 0.5-2.0 Pa; During the coating process, the current of the cathode power supply connected to the hollow magnetron sputtering cathode is 0.5-5.0A; During the coating process, the pulse frequency of the hollow magnetron sputtering cathode is 1000-8000 Hz; During the coating process, the duty cycle of the hollow magnetron sputtering cathode is 10-90%.

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