Detection device for pumping detection of photoluminescence

Abstract

The invention provides a detection device for pumping detection of photoluminescence. The detection device at least comprises a light source, a filter, a first convex lens, a chopper, a first plane mirror, a semi-reflecting and semi-transmitting lens, a sample base bearing a semiconductor sample to be detected, a pumping system, a detection system, a spectrograph and a lock-in amplifier. According to the detection device, detection light and pump light which have potential difference are irradiated to a specified position of a semiconductor sample to be detected, scattered light generated when the detection light and the pump light are irradiated to the semiconductor sample to be detected is collected, and therefore photoluminescence information of the semiconductor sample to be detected is obtained. The photoluminescence information of the semiconductor material can be accurately detected.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor material photoluminescence detection, and in particular to a detection device for pump detection of photoluminescence. Background Art

[0002] In order to detect the influence of defects at different energy levels in semiconductor materials on the photoluminescence of semiconductor materials, it is necessary to detect the photoluminescence information of semiconductor materials. Therefore, a detection device that can accurately detect the photoluminescence information of semiconductor materials is urgently needed. Summary of the invention

[0003] In view of this, an embodiment of the present invention provides a detection device for pump-probe photoluminescence to accurately detect photoluminescence information of semiconductor materials.

[0004] To achieve the above objectives, the embodiments of the present invention provide the following technical solutions:

[0005] The embodiment of the present invention discloses a detection device for pump-detection photoluminescence, the detection device at least comprising: a light source, a filter, a first convex lens, a chopper, a first plane mirror, a semi-reflective semi-transparent lens, a sample base carrying a semiconductor sample to be tested, a pump system, a detection system, a spectrometer, and a lock-in amplifier;

[0006] The light source is used to emit a light beam so that the light beam passes through the filter and the first convex lens and enters the chopper;

[0007] The chopper is used to provide a specified pulse frequency for the light beam, so that the light beam with the specified pulse frequency is reflected by the first plane mirror to the semi-reflective and semi-transparent lens for light splitting, thereby obtaining a detection light beam incident on the detection system and a pump light beam incident on the pump system;

[0008] The detection system is used to make the detection light irradiate to the designated position of the semiconductor sample to be tested after being reflected, so as to stimulate the photoluminescence of the semiconductor sample to be tested;

[0009] The pump system is used to make the pump light irradiate to the designated position of the semiconductor sample to be tested after being reflected, wherein the detection light irradiated to the semiconductor sample to be tested and the pump light have a phase difference;

[0010] The spectrometer is used to collect scattered light generated when the detection light and the pump light are irradiated on the semiconductor sample to be tested, and perform spectroscopic processing on the scattered light;

[0011] The lock-in amplifier is used to extract the signal amplitude and phase information of the scattered light after the spectroscopic processing.

[0012] Preferably, the detection device further comprises:

[0013] A computer is used to process the signal amplitude and the phase information extracted by the lock-in amplifier.

[0014] Preferably, the detection system at least includes: a second plane mirror, a third plane mirror, a fourth plane mirror, a fifth plane mirror and a second convex lens; the third plane mirror and the fourth plane mirror are perpendicular to each other.

[0015] Preferably, the pumping system at least comprises: a sixth plane mirror, a seventh plane mirror, an eighth plane mirror and an optical delay device; the seventh plane mirror and the eighth plane mirror are perpendicular to each other.

[0016] Preferably, the optical delay device is composed of a ninth plane mirror and a tenth plane mirror which are perpendicular to each other; the optical delay device is used to make the detection light and the pump light irradiated to the semiconductor sample to be tested have a phase difference.

[0017] Preferably, the detection device further comprises: a light shielding plate;

[0018] The light shielding plate is used to shield the reflected light generated when the detection light and the pump light are irradiated to the semiconductor sample to be tested.

[0019] Preferably, the detection device further comprises: a first lens having a first focal length and a second lens having a second focal length;

[0020] The scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be measured passes through the first lens and the second lens in sequence and is emitted into the spectrometer.

[0021] Preferably, the light source is a laser light source, the wavelength of the light source is within a first specified range, the spectral half-width range of the light source is within a second specified range, and the photon energy of the light source is greater than the bandgap width of the semiconductor sample to be tested.

[0022] Preferably, the filter is composed of a microscope objective lens of a specified magnification and a pinhole of a specified size.

[0023] Preferably, the first plane mirror is parallel to the semi-reflective and semi-transparent lens, and the first plane mirror and the second plane mirror form an angle of 180 degrees.

[0024] A detection device for pump-probing photoluminescence based on the above-mentioned embodiment of the present invention at least comprises: a light source, a filter, a first convex lens, a chopper, a first plane mirror, a semi-reflective and semi-transparent lens, a sample base carrying a semiconductor sample to be tested, a pump system, a detection system, a spectrometer, and a phase-locked amplifier; the detection device uses a detection light and a pump light with a phase difference to irradiate a specified position of the semiconductor sample to be tested, collects scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be tested, thereby obtaining photoluminescence information of the semiconductor sample to be tested, and realizing accurate detection of photoluminescence information of semiconductor materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0026] Figure 1 A structural block diagram of a detection device for pump-detection photoluminescence provided in an embodiment of the present invention;

[0027] Figure 2 Another structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention;

[0028] Figure 3 Another structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention;

[0029] Figure 4 Another structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention;

[0030] Figure 5 An exemplary diagram of the architecture of a detection device for pump-detection photoluminescence provided in an embodiment of the present invention;

[0031] Figure 6 A photoluminescence detection flow chart provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In this application, the terms "comprises", "comprising" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element.

[0034] In order to detect the influence of defects at different energy levels in a semiconductor material on the photoluminescence of the semiconductor material, it is necessary to detect the photoluminescence information of the semiconductor material.

[0035] The inventors have found that, in the pumping step, the semiconductor material is excited from the ground state to the excited state by exciting the electronic state of the semiconductor material; in the detection step, the information about the optical properties of the semiconductor material can be obtained by measuring the interaction between the excited state and the ground state of the semiconductor material;

[0036] In practical applications, pump-probe photoluminescence technology can be combined with different pump light sources and detection methods (such as femtosecond laser, continuous laser, time-resolved photoluminescence, etc.) to achieve high-precision characterization of the optical properties of semiconductor materials.

[0037] Based on the above research content, this scheme proposes a detection device for pump-detection photoluminescence, which obtains the photoluminescence information of the semiconductor sample to be tested at different overlapping moments by detecting the time delay between the detection light and the pump light in the optical path. The following is a detailed description through various embodiments.

[0038] See also Figure 1 , shows a structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention. It should be noted that: Figure 1 The green line in the figure is used to represent the optical path. The detection device at least includes: a light source 101, a filter 102, a first convex lens 103, a chopper 104, a first plane mirror 105, a semi-reflective and semi-transparent lens 106, a sample base 107 carrying a semiconductor sample to be tested, a pump system 108, a detection system 109, a spectrometer 110, and a lock-in amplifier 111;

[0039] Specifically, the light source 101 is used to emit a light beam, so that the light beam passes through the filter 102 and the first convex lens 103 and is incident on the chopper 104 .

[0040] In some embodiments, the light source 101 is a laser light source (e.g., a femtosecond pulsed laser light source), the wavelength of the light source 101 is within a first specified range, the spectral half-width range of the light source 101 is within a second specified range, the photon energy of the light source 101 is greater than the bandgap width of the semiconductor sample to be tested, and the light source 101 operates in a pulsed form (duration is 10-100fs).

[0041] The filter 102 is composed of a microscope objective lens of a specified magnification and a pinhole of a specified size.

[0042] For example: the wavelength of light source 101 (femtosecond pulse laser light source) is 300nm-2000nm (first specified range), the half-width of the spectrum of light source 101 is 0.01nm-10nm (second specified range), and the photon energy of light source 101 is greater than the bandgap width of the semiconductor sample to be tested.

[0043] For another example, the filter 102 is a pinhole filter, and the filter 102 is composed of a microscope objective lens with a specified magnification of "20x" and a pinhole with a specified size of 1 um.

[0044] It should be noted that the semiconductor samples to be tested are semiconductor materials such as Ge, Si, GaAs, CIGS, GaN and diamond. The band gaps of Ge, Si, GaAs, CIGS, GaN and diamond at room temperature are 0.66eV, 1.12eV, 1.42eV, 1.01-1.68eV, 3.44eV and 5.47eV respectively.

[0045] The filter 102 can purify the light beam (eg, laser) emitted by the light source 101 . For example, the filter 102 removes stray light from the light beam emitted by the light source 101 to purify the light.

[0046] The first convex lens 103 can collimate the light beam purified by the filter 102, thereby collimating the purified light beam into a desired optical path.

[0047] That is, the light beam emitted by the light source 101 is purified by the filter 102 , and the first convex lens 103 performs collimation processing on the purified light beam, and the purified light beam is collimated into the chopper 104 .

[0048] The chopper 104 is used to provide a specified pulse frequency for the light beam, so that the light beam with the specified pulse frequency is reflected by the first plane mirror 105 to the semi-reflective and semi-transparent lens 106 for splitting, thereby obtaining the detection light entering the detection system 109 and the pumping light entering the pumping system 108.

[0049] It should be noted that the function of the chopper 104 is to modulate continuous light into light with a specified pulse frequency, thereby applying pulse modulation to the optical signal; the chopper 104 is used in conjunction with the phase-locked amplifier 111, and the signal of the chopper 104 is input into the phase-locked amplifier 111 for reference, which can amplify the measured signal.

[0050] That is, the light beam emitted by the light source 101 is collimated into the chopper 104 through the filter 102 and the first convex lens 103, and the chopper 104 provides a pulse signal of a specified frequency for the light beam, so that the light beam has a specified pulse frequency;

[0051] The light beam with the specified pulse frequency is reflected by the first plane mirror 105, and then split by the semi-reflective and semi-transparent lens 106 to obtain two beams of light, namely, detection light and pump light. The detection light obtained by splitting enters the detection system 109, and the pump light obtained by splitting enters the pump system 108.

[0052] That is, the semi-reflective and semi-transparent lens 106 can perform a splitting operation on the light beam emitted by the light source 101 , and one light beam (detection light beam) is introduced into the detection system 109 , and one light beam (pumping light beam) is introduced into the pumping system 108 .

[0053] In some embodiments, the first plane mirror 105 is parallel to the semi-reflective and semi-transparent lens 106 .

[0054] The detection system 109 is used to make the detection light irradiate to the designated position of the semiconductor sample to be tested after being reflected, so as to stimulate the photoluminescence of the semiconductor sample to be tested.

[0055] The semiconductor sample to be tested is placed on a sample base 107 . The height of the sample base 107 is adjustable. The sample base 107 is also called a sample stage.

[0056] In some embodiments, the detection system 109 includes at least: a second plane mirror, a third plane mirror, a fourth plane mirror, a fifth plane mirror and a second convex lens; the third plane mirror and the fourth plane mirror are perpendicular to each other, and the first plane mirror 105 and the second plane mirror form an angle of 180 degrees.

[0057] The detection light is introduced into the detection system 109. The optical path of the detection light is: after being reflected by the second plane mirror, the third plane mirror, the fourth plane mirror, and the fifth plane mirror, it is irradiated to the specified position on the surface of the semiconductor sample to be tested through the second convex lens, thereby stimulating the photoluminescence of the semiconductor sample to be tested.

[0058] A pump system 108, used to allow the pump light to be reflected and then irradiated to a designated position of the semiconductor sample to be tested;

[0059] There is a phase difference between the detection light and the pump light irradiated to the semiconductor sample to be tested, or in other words, there is a time delay in the optical path between the detection light and the pump light irradiated to the semiconductor sample to be tested.

[0060] In some embodiments, the pump system 108 includes at least: a sixth plane mirror, a seventh plane mirror, an eighth plane mirror, and an optical delay device; the seventh plane mirror and the eighth plane mirror are perpendicular to each other.

[0061] The optical delay device is composed of a ninth plane mirror and a tenth plane mirror which are perpendicular to each other; the optical delay device is used to make the detection light and the pump light irradiated to the semiconductor sample to be tested have a phase difference.

[0062] The pump light is introduced into the pump system 108, and the optical path of the pump light is: after being reflected by the eighth plane mirror, it is incident on the optical delay device, and then reflected by the seventh plane mirror and the sixth plane mirror, so as to irradiate the specified position on the surface of the semiconductor sample to be tested (the same position as the detection light irradiates).

[0063] The spectrometer 110 is used to collect scattered light generated when the detection light and the pump light are irradiated onto the semiconductor sample to be tested, and perform spectroscopic processing on the scattered light.

[0064] That is to say, the detection system 109 and the pumping system 108 are used to irradiate the detection light and the pumping light to the specified position of the semiconductor sample to be tested, and the spectrometer 110 collects the scattered light (that is, collects the photoluminescence signal) generated by the detection light and the pumping light irradiating the semiconductor sample to be tested, and then the spectrometer 110 performs spectroscopic processing on the collected scattered light.

[0065] It should be noted that the scattered light after spectroscopic processing will be directly received by the detector on the spectrometer 110, and the detector of the spectrometer 110 is connected to the phase-locked amplifier 111; the scattered light after spectroscopic processing received by the detector of the spectrometer 110 will be converted from an optical signal into an electrical signal, and the converted electrical signal will be collected by the phase-locked amplifier 111.

[0066] In some embodiments, the spectrometer 110 may be a spectrometer of a certain model (eg, an Omni-λ500i spectrometer), and the model of the spectrometer 110 is not specifically limited herein.

[0067] The phase-locked amplifier 111 is used to extract the signal amplitude and phase information of the scattered light after the spectroscopic processing; that is, the phase-locked amplifier 111 processes the scattered light after the spectroscopic processing by the spectrometer 110 to extract the signal amplitude and phase information of the scattered light.

[0068] In an embodiment of the present invention, a detection light and a pump light with a phase difference are used to irradiate a specified position of a semiconductor sample to be tested, and scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be tested is collected, so as to obtain the photoluminescence information of the semiconductor sample to be tested, thereby realizing accurate detection of the photoluminescence information of the semiconductor material.

[0069] Combined with the above Figure 1 For the contents shown, see Figure 2 , shows another structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention, the detection device further includes: a computer 112;

[0070] The computer 112 is used to process the signal amplitude and phase information extracted by the lock-in amplifier 111.

[0071] That is, after the phase-locked amplifier 111 extracts the signal amplitude and phase information of the scattered light after the spectroscopic processing, the phase-locked amplifier 111 summarizes the extracted signal amplitude and phase information to the computer 112, and the computer 112 uses the specified computer software to perform data processing on the signal amplitude and phase information.

[0072] It should be noted that the lock-in amplifier 111 and the computer 112 are connected via a data acquisition card, for example, the lock-in amplifier 111 and the computer 112 are connected via a GPIB data acquisition card.

[0073] Combined with the above Figure 2 For the contents shown, see Figure 3 , shows another structural block diagram of a detection device for pump detection photoluminescence provided by an embodiment of the present invention, the detection device further includes: a light shielding plate 113;

[0074] The light shielding plate 113 is used to shield the reflected light generated by the detection light and the pump light irradiating the semiconductor sample to be tested.

[0075] It should be noted that the power of the light beam generated by the light source 101 is very strong, which will cause obvious reflected light when the detection light and the pump light are irradiated on the semiconductor sample to be tested. The reflected light may shine into the human eye. To avoid this situation, the light shielding plate 113 is used to block the reflected light generated by the detection light and the pump light irradiating the semiconductor sample to be tested.

[0076] Combined with the above Figure 3 For the contents shown, see Figure 4 , shows another structural block diagram of a detection device for pump-detection photoluminescence provided by an embodiment of the present invention, the detection device further comprising: a first lens 114 having a first focal length and a second lens 115 having a second focal length;

[0077] The scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be tested passes through the first lens 114 and the second lens 115 in sequence and is incident into the spectrometer 110 .

[0078] In some embodiments, the first focal length of the first lens 114 may be f=75 mm, the second focal length of the second lens 115 may be f=35 mm, the second lens 115 is placed in front of the light entrance of the spectrometer 110 , and the first lens 114 is placed in front of the second lens 115 .

[0079] It should be noted that the power of the light beam generated by the light source 101 is very strong, which will cause obvious reflected light when the detection light and the pump light are irradiated on the semiconductor sample to be tested. These reflected lights are not the information required in the photoluminescence information detection process. Therefore, the height of the sample base 107 is adjusted so that the scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be tested passes through the first lens 114, thereby avoiding reflected light pollution; the second lens 115 is used to further converge the scattered light passing through the first lens 114 to the light entrance of the spectrometer 110.

[0080] In other words, the first lens 114 converges the scattered light to the second lens 115, and the second lens 115 further converges the scattered light to the entrance slit of the spectrometer 110; then, the spectrometer 110 scans the wavelength range to collect the scattered light (i.e., collects the photoluminescence signal), and the phase-locked amplifier 111 processes the scattered light emitted from the exit slit of the spectrometer 110 to extract the signal amplitude and phase information of the scattered light.

[0081] above Figures 1 to 4 This is a description of the detection device for pump-detection photoluminescence; in order to further understand the detection device for pump-detection photoluminescence proposed by the present invention, the following is a description of the detection device for pump-detection photoluminescence proposed by the present invention. Figure 5 An example is given, in which Figure 5 The green line in the figure is used to represent the optical path (equivalent to the laser demonstration circuit).

[0082] See also Figure 5 , shows an exemplary architecture diagram of a detection device for pump-detecting photoluminescence provided by an embodiment of the present invention, the detection device includes: a laser light source 1, a pinhole filter 2, a first convex lens 3, a chopper 4, a first plane mirror 5, a semi-reflective and semi-transparent lens 6, a second plane mirror 7, a third plane mirror 8, a fourth plane mirror 9, a fifth plane mirror 10, a second convex lens 11, a semiconductor sample to be tested 12, a sample base 13, a sixth plane mirror 14, a seventh plane mirror 15, an eighth plane mirror 16, an optical delay 17, a first lens 20 (f=75mm), a second lens 21 (f=35mm), a spectrometer 22, a shading plate 23, a phase-locked amplifier 24 and a computer 25; wherein the optical delay 17 is composed of a ninth plane mirror 18 and a tenth plane mirror 19.

[0083] Specifically, a laser light source 1 generates a light beam (laser beam), which is purified by a pinhole filter 2 and then collimated by a first convex lens 3 into a chopper 4;

[0084] The chopper 4 provides a specified pulse frequency for the light beam. The light beam with the specified pulse frequency is reflected by the first plane mirror 5 and then split by the semi-reflective and semi-transparent lens 6 to obtain pump light introduced into the pump system and detection light introduced into the detection system.

[0085] In the optical path of the detection system, the detection light is reflected by a series of plane mirrors including the second plane mirror 7, the third plane mirror 8, the fourth plane mirror 9, and the fifth plane mirror 10, and then irradiated to a specified position on the surface of the semiconductor sample 12 to be tested through the second convex lens 11, thereby stimulating the photoluminescence of the semiconductor sample 12 to be tested; at this time, the height of the sample base 13 can be adjusted so that the scattered light passes through the first lens 20 (f=75mm) to avoid reflected light pollution, and the reflected light is blocked by the shading plate 23, and the second lens 21 (f=35mm) is placed in front of the light entrance of the spectrometer 22 to further converge the scattered light to the light entrance of the spectrometer 22.

[0086] In the optical path of the pumping system, the pumping light is first reflected by the eighth plane mirror 16 and incident on the optical delay device 17 , and then reflected by the seventh plane mirror 15 and the sixth plane mirror 14 to irradiate the designated position on the surface of the semiconductor sample 12 to be tested.

[0087] The spectrometer 22 collects scattered light generated when the detection light and the pump light are irradiated onto the semiconductor sample to be tested, and performs spectroscopic processing on the scattered light.

[0088] The lock-in amplifier 24 extracts the signal amplitude and phase information of the scattered light after the spectroscopic processing, and transmits the signal amplitude and phase information to the computer 25;

[0089] The computer 25 performs data processing on the signal amplitude and phase information through computer software.

[0090] above Figure 5 is an example of a detection device for pump-probe photoluminescence; in the above Figures 1 to 5 Based on the pump-probe photoluminescence detection device shown in FIG. 1 , the photoluminescence detection process is as follows: Figure 6 As shown, Figure 6 The following steps are involved:

[0091] Step S601: Turn on all devices.

[0092] In the specific process of implementing step S601, devices such as a light source, a chopper, a spectrometer, a phase-locked amplifier and a computer are turned on.

[0093] Step S602: Adjust the light path alignment.

[0094] Step S603: placing a semiconductor sample to be tested.

[0095] It should be noted that after placing the semiconductor sample to be tested, the optical paths of the detection light and the pump light are adjusted respectively; wherein the process of adjusting the optical path of the detection light is steps S604 and S605, and the process of adjusting the optical path of the pump light is steps S606 and S607.

[0096] Step S604: adjusting the optical path of the detection light introduced into the detection system.

[0097] In the specific implementation of step S604, the first lens (f=75 mm) and the second lens (f=35 mm) are adjusted, and the height of the sample base is adjusted so that the spectrometer can collect scattered light.

[0098] Step S605: Determine whether the spectrometer collects scattered light. If the spectrometer does not collect scattered light, return to step S602; if the spectrometer collects scattered light, enter step S608 after the optical path of the pump light is adjusted.

[0099] Step S606: adjusting the optical path of the pump light introduced into the pump system.

[0100] In the specific implementation of step S606, the plane mirror in the pumping system is adjusted, and the semi-reflective and semi-transparent lens is adjusted so that the pumping light is irradiated on the semiconductor sample to be tested.

[0101] Step S607: Determine whether the pump light is irradiated on the semiconductor sample to be tested. If the pump light is not irradiated on the semiconductor sample to be tested, return to step S602; if the pump light is not irradiated on the semiconductor sample to be tested, enter step S608 after the optical path of the detection light is adjusted.

[0102] Step S608: adjusting the power of the light beam emitted by the light source to a suitable power.

[0103] It should be noted that the appropriate power specifically refers to: a power that is less than the maximum range of the lock-in amplifier;

[0104] In the process of detecting photoluminescence information, the phase-locked amplifier will display the maximum signal data that can be received. If the power of the emitted light beam exceeds the maximum range of the phase-locked amplifier, the power of the light beam needs to be lowered.

[0105] Step S609: Adjust the phase lock setting to achieve the optimal signal value.

[0106] It should be noted that in the process of detecting photoluminescence information, the phase-locked amplifier has the function of adjusting the test range (the unit of the range is V, mV, uV or nV). Different semiconductor samples to be tested receive different signal intensities. The phase-locked amplifier will display the intensity indication and display information similar to a "progress bar". When the intensity indication has a signal and the display information similar to a "progress bar" shows the specified content, the signal received at this time can be regarded as the best signal.

[0107] Therefore, adjusting the phase-lock setting to achieve the best signal value specifically refers to: setting the phase-lock of the collected signal of the semiconductor sample to be tested so as to collect the best scattered light signal.

[0108] Step S610: start photoluminescence information detection.

[0109] In the specific implementation of step S610, the photoluminescence information detection is started by controlling through the PC software.

[0110] In summary, an embodiment of the present invention provides a detection device for pump-probe photoluminescence, which utilizes detection light and pump light with a phase difference to irradiate a specified position of a semiconductor sample to be tested, collects scattered light generated by the detection light and pump light irradiating the semiconductor sample to be tested, thereby obtaining photoluminescence information of the semiconductor sample to be tested, and realizing accurate detection of photoluminescence information of semiconductor materials.

[0111] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can refer to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system or system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can refer to the partial description of the method embodiment. The system and system embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without creative work.

[0112] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0113] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A pump-probe photoluminescence detection device, characterized in that: The detection device at least includes: a light source, a filter, a first convex lens, a chopper, a first plane mirror, a semi-reflective and semi-transparent lens, a sample base carrying a semiconductor sample to be tested, a pump system, a detection system, a spectrometer, and a lock-in amplifier; The light source is used to emit a light beam so that the light beam passes through the filter and the first convex lens and enters the chopper; The chopper is used to provide a specified pulse frequency for the light beam, so that the light beam with the specified pulse frequency is reflected by the first plane mirror to the semi-reflective and semi-transparent lens for light splitting, thereby obtaining a detection light beam incident on the detection system and a pump light beam incident on the pump system; The detection system is used to make the detection light irradiate to the designated position of the semiconductor sample to be tested after being reflected, so as to stimulate the photoluminescence of the semiconductor sample to be tested; The pump system is used to make the pump light irradiate to the designated position of the semiconductor sample to be tested after being reflected, wherein the detection light irradiated to the semiconductor sample to be tested and the pump light have a phase difference; The spectrometer is used to collect scattered light generated when the detection light and the pump light are irradiated on the semiconductor sample to be tested, and perform spectroscopic processing on the scattered light; The lock-in amplifier is used to extract the signal amplitude and phase information of the scattered light after the spectroscopic processing.

2. The detection device according to claim 1, characterized in that: The detection device also includes: A computer is used to process the signal amplitude and the phase information extracted by the lock-in amplifier.

3. The detection device according to claim 1, characterized in that: The detection system at least comprises: a second plane mirror, a third plane mirror, a fourth plane mirror, a fifth plane mirror and a second convex lens; the third plane mirror and the fourth plane mirror are perpendicular to each other.

4. The detection device according to claim 1, characterized in that: The pumping system at least comprises: a sixth plane mirror, a seventh plane mirror, an eighth plane mirror and an optical delay device; the seventh plane mirror and the eighth plane mirror are perpendicular to each other.

5. The detection device according to claim 4, characterized in that: The optical delay device is composed of a ninth plane mirror and a tenth plane mirror which are perpendicular to each other; the optical delay device is used to make the detection light and the pump light irradiated to the semiconductor sample to be tested have a phase difference.

6. The detection device according to any one of claims 1 to 5, characterized in that: The detection device further comprises: a light shielding plate; The light shielding plate is used to shield the reflected light generated when the detection light and the pump light are irradiated to the semiconductor sample to be tested.

7. The detection device according to any one of claims 1 to 5, characterized in that: The detection device further comprises: a first lens having a first focal length and a second lens having a second focal length; The scattered light generated by the detection light and the pump light irradiating the semiconductor sample to be measured passes through the first lens and the second lens in sequence and is emitted into the spectrometer.

8. The detection device according to any one of claims 1 to 5, characterized in that: The light source is a laser light source, the wavelength of the light source is within a first specified range, the spectrum half-width range of the light source is within a second specified range, and the photon energy of the light source is greater than the bandgap width of the semiconductor sample to be tested.

9. The detection device according to any one of claims 1 to 5, characterized in that: The filter consists of a microscope objective of specified magnification and an aperture of specified size.

10. The detection device according to claim 3, characterized in that: The first plane mirror is parallel to the semi-reflective and semi-transparent lens, and the first plane mirror and the second plane mirror form an angle of 180 degrees.

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