Aging test method and aging test equipment for storage device

Abstract

The invention discloses an aging test method and aging test equipment for a storage device. The aging test method comprises the following steps: acquiring a flash memory particle type of a tested storage device; acquiring corresponding test parameters from the configuration file by utilizing the flash memory particle type; forming a corresponding aging test program based on the test parameters; and performing an aging test on the tested storage device by using the aging test program. According to the aging test method, the corresponding test parameters can be automatically matched and the corresponding aging test program can be determined by utilizing the flash memory particle type of the tested storage device, and a tester does not need to adjust the test parameters according to different flash memory particles, so that the aging test efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of aging test, and in particular to an aging test method and aging test equipment for a storage device. Background Art

[0002] Storage devices are one of the key components of computers, embedded systems, user equipment and other devices. They determine the stability of the operation of the above devices, so it is very necessary to test the storage devices.

[0003] Aging test is a part of storage device testing. Currently, before performing aging test on storage devices with different storage particles or storage devices of different batches, testers need to spend time adjusting the aging test process and aging test temperature in the firmware of the aging test device, which greatly increases the test time. Such a time-consuming testing method does not meet the current demand for high-efficiency production. Summary of the invention

[0004] The present application provides an aging test method and an aging test device for a storage device.

[0005] A technical solution adopted by the present application is to provide an aging test method for a storage device, the method comprising:

[0006] Obtain the flash memory particle type of the tested storage device;

[0007] Use the flash memory particle type to obtain the corresponding test parameters from the configuration file;

[0008] Form a corresponding aging test program based on the test parameters;

[0009] An aging test is performed on the storage device under test using an aging test program.

[0010] The test parameters include at least a test type, the flash memory particle types include SLC particles and non-SLC particles; the test type includes one or more of read, program, and erase;

[0011] Perform an aging test on the storage device under test using an aging test program, including:

[0012] In response to the flash memory particle type being SLC particles, a program and erase test and / or a low-level format test is performed on the tested storage device. The low-level format test includes performing erase, program and read tests on the tested storage device.

[0013] The step of performing an aging test on the storage device under test by using the aging test program further includes:

[0014] In response to the flash memory particle type being a non-SLC particle, one or more tests selected from the group consisting of a read test, a programming and erasing test, a low-grid test, a maximum threshold voltage low-grid test, an SLC programming and erasing test, and an SLC low-grid test are performed on the storage device under test, wherein the maximum threshold voltage low-grid test includes performing an erasing and programming test on the storage device under test at the maximum threshold voltage corresponding to the flash memory particle.

[0015] Among them, the non-SLC particles include at least MLC particles, TLC particles or QLC particles. When the flash memory particles are TLC particles, the highest threshold voltage is L7 voltage; when the flash memory particles are QLC particles, the highest threshold voltage is L15 voltage.

[0016] The aging test is performed on the storage device under test by using the aging test program, including:

[0017] In response to the flash memory particle type being a non-SLC particle, an aging test is performed on the storage device under test according to an aging test procedure corresponding to the SLC particle.

[0018] The test parameters further include technical specifications of the tested storage device, the technical specifications include first technical specifications and second technical specifications, and the first technical specifications are different from the second technical specifications;

[0019] Before the step of performing an aging test on the storage device under test using the aging test program, the step further includes:

[0020] In response to the technical specification of the tested storage device being the first technical specification, determining the aging temperature interval of the tested storage device to be the first temperature interval;

[0021] Perform an aging test on the storage device under test using an aging test program, including:

[0022] An aging test is performed on the storage device under test using an aging test program within a first temperature range.

[0023] Before the step of performing an aging test on the storage device under test using the aging test program, the method further includes:

[0024] In response to the technical specification of the tested storage device being the second technical specification, determining that the aging temperature interval of the tested storage device is the first temperature interval and the second temperature interval; the first temperature interval is greater than the second temperature interval;

[0025] Perform an aging test on the storage device under test using an aging test program, including:

[0026] An aging test is performed on the storage device under test by using an aging test program alternately in a first temperature interval and a second temperature interval.

[0027] Wherein, obtaining the flash memory particle type of the tested storage device also includes:

[0028] Obtaining flash memory batch information of the tested storage device;

[0029] Use the flash memory particle type to obtain the corresponding test parameters from the configuration file, including:

[0030] Use the flash memory particle type and flash memory batch information to obtain the corresponding test parameters from the configuration file.

[0031] Another technical solution adopted by the present application is to provide an aging test system for a storage device, wherein the aging test device for the storage device includes a main control device and at least one storage device to be tested;

[0032] The main control device includes at least one control unit, at least one storage device under test is coupled to the control unit, and the control unit implements the above-mentioned aging test method when performing an aging test on the at least one storage device under test.

[0033] Wherein, each batch of tested storage devices in the aging test equipment are storage devices of the same technical specifications.

[0034] The beneficial effects of the present application are: obtaining the flash memory particle type of the storage device under test; obtaining the corresponding test parameters from the configuration file using the flash memory particle type; forming a corresponding aging test program based on the test parameters; using the aging test program to perform an aging test on the storage device under test, automatically matching the corresponding test parameters and determining the corresponding aging test program using the flash memory particle type of the storage device under test, without requiring the tester to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 It is a flow chart of an embodiment of an aging test method for a storage device provided by the present application;

[0037] Figure 2 is a flow chart of another embodiment of the aging method for a storage device provided by the present application;

[0038] Figure 3is a flow chart of another embodiment of the aging test method for a storage device provided by the present application;

[0039] Figure 4 yes Figure 2 A schematic diagram of a flow chart of an embodiment of sub-step S35;

[0040] Figure 5 yes Figure 3 A schematic diagram of a flow chart of an embodiment of sub-step S45;

[0041] Figure 6 is a flow chart of another embodiment of the aging test method for a storage device provided by the present application;

[0042] Figure 7 yes Figure 6 A schematic diagram of a flow chart of an embodiment of sub-step S104 in FIG.

[0043] Figure 8 It is a structural schematic diagram of an embodiment of an aging test device for a storage device provided by the present application;

[0044] Fig. 9 It is a structural diagram of an embodiment of a computer storage medium provided by the present application. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0046] The terms "first", "second", etc. in this application are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods or devices.

[0047] The inventor of the present application has found through long-term research that in the current aging test steps of storage devices, after the storage device is coupled to the aging test equipment, it is necessary to manually adjust different aging test processes and temperature control parameters according to different types of flash memory particles (Nand Flash). Among them, the adjustment of the aging test process and temperature control parameters needs to be achieved by modifying the firmware code. If several storage devices in the same batch contain multiple different types of Nand Flash, testers need to spend a lot of time adjusting the firmware code, which increases the production and development time of the storage device.

[0048] The present application mainly designs a storage device aging test method. Unlike the traditional method, the storage device aging test method of the present application obtains the flash memory particle type of the tested storage device, uses the flash memory particle type to determine the corresponding test parameters from a pre-set configuration file, and then forms an aging test program, so that the aging test equipment automatically configures the test parameters for at least one tested storage device, eliminating the need for testers to modify the test parameters one by one according to the tested storage devices with different flash memory particles, thereby further improving the efficiency of the aging test of the storage device.

[0049] Please refer to Figure 1 , Figure 1 It is a flow chart of an embodiment of an aging test method for a storage device provided in the present application.

[0050] like Figure 1 As shown, the aging test method for the storage device in the embodiment of the present application may specifically include the following steps:

[0051] S1, obtaining the flash memory particle type of the storage device under test.

[0052] The aging test method for a storage device provided in the present application is performed by an aging test device. In some application scenarios, the aging test device may be the aging test system itself. In some application scenarios, the aging storage device may be a control chip of the aging test system. In some application scenarios, the aging storage device may be a Universal Flash Storage (UFS) controller coupled to the storage device under test in the aging test system. In some embodiments, a UFS controller may be coupled to more than one storage device under test at the same time.

[0053] Specifically, the storage device under test is first coupled to the aging test device in a wired communication or wireless communication manner, and the aging test device obtains the flash memory particle type of the storage device under test.

[0054] In some embodiments, the flash memory particle type information of the tested storage device is stored in the main control chip of the tested storage device, and the aging test obtains the flash memory particle type of the tested storage device from the main control chip.

[0055] Optionally, the storage device under test may be a USB flash drive, a mobile hard disk, a solid-state hard disk, a read-only memory (ROM) or a random access memory (RAM), etc., which is not limited here.

[0056] In some application scenarios, the storage device under test may be a flash memory chip. In some embodiments, the storage device under test is a solid state drive without a main control unit, and the storage device under test includes a printed circuit board, a flash memory chip, or includes a printed circuit board, a flash memory chip and a cache chip.

[0057] In some embodiments, the flash memory particle types include SLC (Single Level Cell) particles and non-SLC particles.

[0058] Optionally, the non-SLC particles can be MLC (Multiple Level Cell) particles, TLC (Triple Level Cell) particles, QLC (Quad-Level Cell) particles or PLC (Penta-Level Cell) particles, etc., which are not limited here.

[0059] In some application scenarios, the number of tested storage devices is greater than or equal to two, wherein the flash memory particle type of at least one storage device is different from the flash memory particle type of other tested storage devices.

[0060] S2, using the flash memory particle type to obtain corresponding test parameters from the configuration file.

[0061] Specifically, the aging test device uses the flash memory particle type of the tested storage device to obtain corresponding test parameters from the configuration file.

[0062] In some embodiments, the configuration file is stored in the test firmware. Before the step of coupling the storage device under test and the aging test device, the tester couples the aging test device to a PC (personal computer) and writes the test firmware into the storage unit of the aging test device through the tool end on the PC.

[0063] In some embodiments, the configuration file includes a mapping relationship between the flash memory particle type and the test parameters. The aging test device matches the flash memory particle type of the tested storage device with the flash memory particle type in the configuration file to determine the corresponding test parameters.

[0064] S3, forming a corresponding aging test program based on the test parameters.

[0065] Specifically, the aging test device forms a corresponding aging test program based on the test parameters.

[0066] In some embodiments, the test parameters include a test type. Further, the test type includes one or more of read, program, and erase.

[0067] It is worth noting that the aging test device can form different aging test operations by combining test types.

[0068] Exemplarily, the aging test device performs a low-level formatting test operation by successively performing erasing, programming, and reading operations on the storage device under test.

[0069] In some application scenarios, the test parameters also include the number of tests and the test temperature range. The aging test program is formed based on the test type, the number of tests, and the test temperature range.

[0070] S4, performing an aging test on the storage device under test using an aging test program.

[0071] Specifically, the aging test device performs an aging test on the storage device under test using an aging test program.

[0072] In some embodiments, the aging test program defines the test temperature range, the aging test operation type of this aging test, and each aging test operation corresponds to a different number of tests (number of cycles). For example, this aging test program defines the test temperature range as 85 degrees Celsius, the aging test operation as a low-grid operation, and the number of tests (number of cycles) as 10 times.

[0073] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0074] Another embodiment of the aging test method for a storage device provided in the present application may specifically include the following steps:

[0075] S11, obtaining the flash memory particle type of the storage device under test.

[0076] S12, obtaining corresponding test parameters from the configuration file using the flash memory particle type.

[0077] S13, forming a corresponding aging test program based on the test parameters.

[0078] S14, in response to the flash memory particle type being an SLC particle, performing a program and erase test and / or a low-level format test on the storage device under test.

[0079] Among them, the low-level test includes erasing, programming and reading tests on the storage device under test.

[0080] Specifically, the aging test device determines that the flash memory particle type of the tested storage device is SLC particle, and performs a program and erase (SLC PGM+Erase) test and / or a low format (SLC low format) test on the tested storage device.

[0081] Exemplarily, the aging test apparatus performs three rounds of SLC low-format tests on the tested storage device whose flash memory particle type is SLC particles at a test temperature of 85° C.

[0082] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0083] Another embodiment of the aging test method for a storage device provided in the present application may specifically include the following steps:

[0084] S21, obtaining the flash memory particle type of the storage device under test.

[0085] S22, obtaining corresponding test parameters from the configuration file using the flash memory particle type.

[0086] S23, forming a corresponding aging test program based on the test parameters.

[0087] S24, in response to the flash memory particle type being a non-SLC particle, performing one or more tests of a read test, a program and erase test, a low-level test, a maximum threshold voltage low-level test, an SLC program and erase test, and an SLC low-level test on the storage device under test.

[0088] Specifically, the aging test device determines that the flash memory particle type of the tested storage device is a non-SLC particle, and performs one or more of a read test, a program and erase test (PGM+Erase), a low-grid test, a maximum threshold voltage low-grid test, an SLC program and erase test (SLC PGM+Erase), and an SLC low-grid test on the tested storage device. Since the read test of non-SLC particles has higher requirements on the stability of electrons than the read test of SLC particles, there is no need to perform an SLC read test.

[0089] Furthermore, since the flash memory particle type is non-SLC particle, if the aging test device needs to perform SLC programming and erasing test (SLC PGM+Erase) and SLC low format test on the tested storage device, the tested storage device is tested according to the aging test procedure corresponding to the SLC particle. In some embodiments, the aging test device simulates the flash memory particles of the tested storage device into SLC particles before performing the corresponding SLC test.

[0090] The non-SLC particles include at least MLC particles, TLC particles or QLC particles. Optionally, the non-SLC particles also include PLC particles, etc., which are not limited here.

[0091] Among them, the maximum threshold voltage low-grid test includes performing an erase and program test on the tested storage device at the maximum threshold voltage corresponding to the flash memory particles. Specifically, the aging test device performs a maximum threshold voltage low-grid test on the tested storage device mainly to accelerate the aging of the storage cells (cells) in the storage device, and test whether each storage cell has the ability to perform programming and erasing operations at the maximum threshold voltage, so there is no need to perform a read operation on the tested storage device at the maximum threshold voltage.

[0092] In some embodiments, when the flash memory particles of the tested storage device are TLC particles, the highest threshold voltage is L7 (Level 7) voltage. In this embodiment, the aging test device performs one or more tests of the tested storage device including read test (TLC Read), program and erase test (TLC PGM+Erase), low grid test (TLC low grid), highest threshold voltage low grid test (TLC L7 low grid), SLC program and erase test (SLC PGM+Erase), and SLC low grid test (SLC low grid). Optionally, the aging test device simulates the TLC flash memory particles of the tested storage device into SLC particles and then performs SLC program and erase test (SLC PGM+Erase) and / or SLC low grid test.

[0093] In some embodiments, when the flash memory particles are QLC particles, the highest threshold voltage is the L15 voltage. In this embodiment, the aging test device performs one or more tests on the tested storage device including a read test (QLC Read), a program and erase test (QLC PGM+Erase), a low-grid test (QLC low-grid), a highest threshold voltage low-grid test (QLC L15 low-grid), an SLC program and erase test (SLC PGM+Erase), and an SLC low-grid test (SLC low-grid). Optionally, the aging test device simulates the QLC flash memory particles of the tested storage device into SLC particles before performing an SLC program and erase test (SLC PGM+Erase) and / or an SLC low-grid test.

[0094] Furthermore, when the flash memory particles are PLC particles, the highest threshold voltage is L31 (Level 31). In this embodiment, the aging test device performs one or more tests on the tested storage device including a read test (PLC Read), a program and erase test (PLC PGM+Erase), a low-level test (PLC low-level), a highest threshold voltage low-level test (PLC L31 low-level), an SLC program and erase test (SLC PGM+Erase), and an SLC low-level test (SLC low-level). Optionally, the aging test device simulates the PLC flash memory particles of the tested storage device into SLC particles and then performs an SLC program and erase test (SLC PGM+Erase) and / or an SLC low-level test.

[0095] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0096] See also Figure 2 , Figure 2 It is a flow chart of another embodiment of the aging method of a storage device provided in the present application.

[0097] like Figure 2 As shown, another embodiment of the aging test method for a storage device provided by the present application may specifically include the following steps:

[0098] S31, obtaining the flash memory particle type of the storage device under test.

[0099] S32, obtaining corresponding test parameters from the configuration file using the flash memory particle type.

[0100] Among them, the test parameters also include technical specifications of the storage device under test, and the technical specifications include first technical specifications and second technical specifications, and the first technical specifications are different from the second technical specifications. Specifically, the first technical specification is a commercial specification, and the second technical specification is a vehicle specification. In some application scenarios, the error rate of the tested storage device with vehicle specifications during the aging test phase must be lower than that of the tested storage device with commercial specifications. In some application scenarios, the tested storage device with commercial specifications only needs to be aged in an environment of 85 degrees Celsius, and the tested storage device with vehicle specifications needs to be aged at different temperatures, such as alternating between a low temperature environment of -43 degrees Celsius to -30 degrees Celsius and a high temperature environment of 108 degrees Celsius to 125 degrees Celsius.

[0101] Specifically, the aging test device uses the flash memory particle type to obtain the corresponding test parameters from the firmware configuration file. For example, among the multiple tested storage units, the tested storage units of SLC particles are storage units of the second technical specification, and the tested storage units of non-SLC particles are storage units of the first technical specification. The aging test device determines the technical specification of a tested storage unit by judging whether the flash memory particles of a tested storage unit are SLC particles.

[0102] In some embodiments, the aging test device uses the flash memory particle type to determine whether the technical specification of the tested storage device is the first technical specification or the second technical specification.

[0103] S33, forming a corresponding aging test program based on the test parameters.

[0104] S34 , in response to the technical specification of the tested storage device being the first technical specification, determining that the aging temperature interval of the tested storage device is the first temperature interval.

[0105] Specifically, the aging test device determines that the technical specification of the tested storage device is the first specification, and determines that the aging temperature range of the tested storage device is the first temperature range.

[0106] In some embodiments, when the storage device under test is of commercial specifications, the aging test device determines that the aging temperature interval of the storage device under test is the first temperature interval.

[0107] Optionally, the first temperature interval can be 70 degrees Celsius to 75 degrees Celsius, 75 degrees Celsius to 80 degrees Celsius, 80 degrees Celsius to 85 degrees Celsius, 85 degrees Celsius to 95 degrees Celsius, 95 to 100 degrees Celsius, 100 degrees Celsius to 105 degrees Celsius, 105 degrees Celsius to 110 degrees Celsius, or any one of 75 to 85 degrees Celsius, 80 to 95 degrees Celsius, and 85 to 110 degrees Celsius, and is not limited here.

[0108] S35, performing an aging test on the storage device under test using an aging test program within the first temperature range.

[0109] Specifically, the aging test device sets the test temperature in a first temperature range, and performs an aging test on the storage device under test using a determined aging test program.

[0110] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0111] See also Figure 3 , Figure 3 It is a flow chart of another embodiment of the aging test method for a storage device provided in the present application.

[0112] like Figure 3 As shown, another embodiment of the aging test method for a storage device provided by the present application may specifically include the following steps:

[0113] S41, obtaining the flash memory particle type of the storage device under test.

[0114] S42, obtaining corresponding test parameters from the configuration file using the flash memory particle type.

[0115] S43, forming a corresponding aging test program based on the test parameters.

[0116] S44 , in response to the technical specification of the tested storage device being the second technical specification, determining that the aging temperature interval of the tested storage device is the first temperature interval and the second temperature interval.

[0117] Wherein, the first temperature interval is greater than the second temperature interval;

[0118] Specifically, the aging test device determines that the technical specification of the tested storage device is the second specification, and determines that the aging temperature range of the tested storage device is the first temperature range.

[0119] Optionally, the first temperature interval can be any interval of 100 degrees Celsius to 105 degrees Celsius, 105 degrees Celsius to 110 degrees Celsius, 110 degrees Celsius to 115 degrees Celsius, 115 degrees Celsius to 120 degrees Celsius, 120 degrees Celsius to 125 degrees Celsius, 125 degrees Celsius to 130 degrees Celsius, 130 degrees Celsius to 135 degrees Celsius, or 100 degrees Celsius to 110 degrees Celsius, 110 degrees Celsius to 120 degrees Celsius, 120 degrees Celsius to 130 degrees Celsius, or 100 degrees Celsius to 115 degrees Celsius, 115 to 130 degrees Celsius, and is not limited here.

[0120] Optionally, the second temperature interval can be -60 degrees Celsius to -55 degrees Celsius, -55 degrees Celsius to -50 degrees Celsius, -50 degrees Celsius to -45 degrees Celsius, -45 degrees Celsius to -40 degrees Celsius, -40 degrees Celsius to -35 degrees Celsius, -35 degrees Celsius to -30 degrees Celsius, -30 degrees Celsius to -25 degrees Celsius, or -60 degrees Celsius to -50 degrees Celsius, -50 degrees Celsius to -40 degrees Celsius, -40 degrees Celsius to -30 degrees Celsius, -30 degrees Celsius to -20 degrees Celsius, or -60 degrees Celsius to -40 degrees Celsius, -40 degrees Celsius to -20 degrees Celsius, or -60 degrees Celsius to -30 degrees Celsius, etc., and is not limited here.

[0121] S45, performing an aging test on the storage device under test by using an aging test program alternately in the first temperature range and the second temperature range.

[0122] Specifically, the aging test device performs an aging test on the storage device under test by using an aging test program alternately in a first temperature interval and a second temperature interval.

[0123] Exemplarily, the aging test apparatus performs an aging test on the storage device under test alternately in a first temperature range of 100 degrees Celsius to 115 degrees Celsius and a second temperature range of -60 degrees Celsius to -20 degrees Celsius.

[0124] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0125] Another embodiment of the aging test method for a storage device provided in the present application may specifically include the following steps:

[0126] S51, obtaining the flash memory particle type and flash memory batch information of the tested storage device.

[0127] Specifically, the aging test device obtains the flash memory particle type and flash memory batch information of the tested storage device.

[0128] Understandably, due to the influence of production process, different batches of tested storage devices of the same flash memory particle type have certain differences. The aging test device may not be able to fully implement the aging test of the tested storage devices using the same test parameters for the same set of flash memory particle types.

[0129] In some application scenarios, the number of tested storage devices is greater than or equal to two, wherein flash memory batch information of at least one storage device is different from flash memory batch information of other tested storage devices.

[0130] S52, obtaining corresponding test parameters from the configuration file using the flash memory particle type and the flash memory batch information.

[0131] Specifically, the aging test device uses the flash memory particle type and flash memory batch information of the tested storage device to obtain corresponding test parameters from the configuration file.

[0132] In some embodiments, the aging test device may also use the flash memory particle type and flash memory batch information to determine the technical specifications of the tested storage device.

[0133] S53, forming a corresponding aging test program based on the test parameters.

[0134] In some embodiments, the test type includes one or more of reading, programming, and erasing.

[0135] S54, performing an aging test on the storage device under test using an aging test program.

[0136] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0137] See also Figure 4 , Figure 4 yes Figure 2 Schematic diagram of the process of an embodiment of sub-step S35.

[0138] like Figure 4 As shown, the sub-steps of S35 may specifically include:

[0139] S351, executing TLC low-level format operation.

[0140] Specifically, the aging test device performs a TLC low-level format operation on the tested memory cell, that is, performs erase, program, and read operations on the tested memory cell in sequence.

[0141] It can be understood that the flash memory particle type of the tested storage unit in this embodiment is any one of TLC, QLC or PLC.

[0142] Among them, S351 is executed three times and then jumps to S352.

[0143] S352, executing TLC L7 low-level format operation.

[0144] Specifically, the aging test device performs a TLC L7 low-level operation on the memory cell under test, that is, performs an erase and a program operation on the memory cell under test at a L7 threshold voltage in sequence.

[0145] Among them, S352 is executed twice and then jumps to S353.

[0146] S353, executing TLC low-level format operation.

[0147] Specifically, the aging test device performs a TLC low-level format operation on the tested memory cell, that is, performs erase, program, and read operations on the tested memory cell in sequence.

[0148] Among them, S353 is executed twice and then jumps to S354.

[0149] S354, executing SLC low-level format operation.

[0150] Specifically, the aging test device performs an SLC L7 low-level format operation on the tested memory cell, that is, the memory cell of the tested memory cell is simulated from TLC to SLC and then the erase, program and read operations are performed in sequence.

[0151] Among them, S354 is executed three times and then jumps to S355.

[0152] S355, end.

[0153] It is worth noting that S351-S354 are all aging test devices that perform aging tests on the memory cells under test in a first temperature range. In this embodiment, the first temperature range is 80 to 85 degrees Celsius.

[0154] See also Figure 5 , Figure 5 yes Figure 3 Schematic diagram of the process of an embodiment of sub-step S45.

[0155] like Figure 5 As shown, the sub-steps of S45 may specifically include:

[0156] S451, execute TLC PGM+Erase operation.

[0157] Specifically, the aging test apparatus performs TLC programming and erasing operations on the tested memory cells.

[0158] It can be understood that the flash memory particle type of the tested storage unit in this embodiment is any one of TLC, QLC or PLC.

[0159] Among them, S451 is executed once and then jumps to S452.

[0160] S452, executing TLC low-level format operation.

[0161] Among them, S452 is executed twice and then jumps to S453.

[0162] S453, executing TLC L7 low-level format operation.

[0163] Among them, S453 is executed twice and then jumps to S454.

[0164] S454, executing a TLC low-level format operation.

[0165] Among them, S454 is executed twice and then jumps to S455.

[0166] S455, execute SLC PGM+Erase operation.

[0167] Among them, S455 is executed once and then jumps to S456.

[0168] S456, executing SLC low-level format operation.

[0169] Among them, S456 is executed twice and then jumps to S457.

[0170] S457, executing TLC low-level format operation.

[0171] Specifically, the aging test apparatus performs a TLC low-level format operation on the memory cell under test.

[0172] Among them, S457 jumps to S458 after executing one operation.

[0173] Among them, S451 to S457 are all that the aging test device performs aging test on the tested storage unit in the first temperature range. In this embodiment, the first temperature range is 100 degrees Celsius to 115 degrees Celsius.

[0174] S458, perform a TLC read operation.

[0175] Among them, S458 is executed once and then jumps to S459.

[0176] S459, executing TLC low-level format operation.

[0177] Among them, S459 is executed three times and then jumps to S460.

[0178] S460, executing a TLC L7 low-level format operation.

[0179] Among them, S460 is executed twice and then jumps to S461.

[0180] S461, executing TLC low-level format operation.

[0181] Among them, S461 is executed twice and then jumps to S462.

[0182] S462, execute SLC PGM+Erase operation.

[0183] Among them, S462 is executed once and then jumps to S463.

[0184] S463, executing SLC low-level format operation.

[0185] Among them, S463 is executed twice and then jumps to S464.

[0186] S464, executing a TLC low-level format operation.

[0187] Among them, S464 is executed once and then jumps to S465.

[0188] Among them, S458-S464 are all that the aging test device performs aging test on the tested storage unit in the second temperature range. In this embodiment, the second temperature range is -60 degrees Celsius to -30 degrees Celsius.

[0189] S465, perform a TLC read operation.

[0190] Among them, S465 is that the aging test device performs an aging test on the tested storage unit in the first temperature range.

[0191] Among them, S465 is executed once and then jumps to S466.

[0192] S466, end.

[0193] See also Figure 6 , Figure 6 It is a flow chart of another embodiment of the aging test method for a storage device provided in the present application.

[0194] like Figure 6As shown, another embodiment of the aging test method for a storage device provided by the present application may specifically include:

[0195] S101, obtaining identification information of a storage device under test and determining its technical specifications.

[0196] In some embodiments, before the aging test device executes step S101, the user sends an aging test firmware to the aging test device through a PC or other host computer tool end. The aging test firmware stores a configuration file. After the aging test device writes the aging test firmware, the user controls the aging test device to enter mass production (MP) mode through the PC or host computer.

[0197] Specifically, the aging test device obtains identification information of the tested storage device, which may include the flash memory particle type and flash memory batch information of the tested storage device. The aging test device determines from the identification information whether the technical specification of the tested storage device is the first technical specification or the second technical specification.

[0198] The flash memory granularity type of the tested storage device in this embodiment is SLC or TLC.

[0199] S102: Whether the technical specification of the tested storage device is the first technical specification.

[0200] If yes, jump to S103, if no, jump to S104.

[0201] S103, determining the progress of the aging test of the tested storage device.

[0202] In some embodiments, the aging test device determines the progress of the tested storage device by reading the array max_switch in the configuration file (epr_config) and comparing the number of max_switch and the current switching number i. The current switching number i represents how many different tests the tested storage device has performed. For example, when the SLC programming and erasing test jumps to the SLC low-format test, i increases by 1. max_switch is the switching number threshold. Optionally, max_switch can be any one of 10, 15, 20, 25, 30, and 35, which is not limited here.

[0203] Jump to S105.

[0204] S104, executing an aging step corresponding to the second technical specification.

[0205] S105: Check whether the storage device under test has completed the aging test.

[0206] In some embodiments, the aging test device determines whether the tested storage device has completed the aging test by determining whether the current switching number i is less than the switching number threshold max_switch and whether epr_config[max_switch] has a value. If both judgment structures are yes, the tested storage device has completed the aging test. If at least one of the judgment results is no, the tested storage device has not completed the aging test.

[0207] If yes, jump to S125, if no, jump to S106.

[0208] S106: Check whether the flash memory chip type of the tested storage device is SLC.

[0209] If yes, jump to S107, if no, jump to S113.

[0210] S107, executing SLC programming and erasing operations.

[0211] In some embodiments, when the flash memory cell type of the tested storage device is TLC, the aging test device simulates the flash memory cell of the tested storage device into SLC, and performs SLC programming and erasing operations.

[0212] The storage device under test completes one test cycle and jumps to S108.

[0213] S108, whether the temperature range meets the requirements.

[0214] Specifically, the aging test device detects whether the temperature range of the tested storage device is within a preset temperature interval, wherein the preset temperature interval may be a first temperature interval or a second temperature interval.

[0215] If yes, jump to S109. If no, jump to S125.

[0216] S109: Whether the number of cycles is greater than or equal to the cycle threshold number.

[0217] Among them, the cycle threshold number of SLC programming and erasing operations has been pre-determined in the configuration parameters.

[0218] If yes, jump to S110. If no, jump to S107.

[0219] S110, executing SLC low-level format operation.

[0220] In some embodiments, when the flash memory cell type of the tested storage device is TLC, the aging test device simulates the flash memory cell of the tested storage device into SLC and performs an SLC low-level format operation.

[0221] Furthermore, the cycle threshold number of S108 has been predetermined in the configuration parameters, and when the number of cycles completed by the tested storage device exceeds the threshold number, the process jumps to S103.

[0222] S111, whether the temperature range meets the requirements.

[0223] If yes, jump to S112. If no, jump to S125.

[0224] S112: Whether the number of cycles is greater than or equal to the cycle threshold number.

[0225] The cycle threshold number of the SLC low-format operation has been predetermined in the configuration parameters.

[0226] If yes, jump to S105. If no, jump to S110.

[0227] S113, executing TLC programming and erasing operations.

[0228] The storage device under test completes one test cycle and jumps to S114.

[0229] S114, whether the temperature range meets the requirements.

[0230] If yes, jump to S115. If no, jump to S125.

[0231] S115, whether the number of cycles is greater than or equal to the cycle threshold number.

[0232] Among them, the cycle threshold number of TLC programming and erasing operations has been pre-determined in the configuration parameters.

[0233] If yes, jump to S116, if no, jump to S113.

[0234] S116, executing a TLC low-level format operation.

[0235] The storage device under test completes one test cycle and jumps to S117.

[0236] S117, whether the temperature range meets the requirements.

[0237] If yes, jump to S118. If no, jump to S125.

[0238] S118: Whether the number of cycles is greater than or equal to the cycle threshold number.

[0239] The cycle threshold number of the TLC low-grid operation has been predetermined in the configuration parameters.

[0240] If yes, jump to S119, if no, jump to S116.

[0241] S119, executing TLC L7 low-level format operation.

[0242] The storage device under test completes one test cycle and jumps to S120.

[0243] S120, whether the temperature range meets the requirements.

[0244] If yes, jump to S121. If no, jump to S125.

[0245] S121, whether the number of cycles is greater than or equal to the cycle threshold number.

[0246] Among them, the cycle threshold number of TLC L7 low-level operation has been pre-determined in the configuration parameters.

[0247] If yes, jump to S122, if no, jump to S119.

[0248] S122, executing a TLC read operation.

[0249] The storage device under test completes one test cycle and jumps to S123.

[0250] S123, whether the temperature range meets the requirements.

[0251] If yes, jump to S124. If no, jump to S123.

[0252] S124: Whether the number of cycles is greater than or equal to the cycle threshold number.

[0253] The cycle threshold number of the TLC read operation has been predetermined in the configuration parameters.

[0254] If yes, jump to S107, if no, jump to S122.

[0255] S125, end.

[0256] It is worth noting that when the aging test device actually performs the aging test on the storage device under test, it will selectively execute one or more operations among S107, S110, S113, S116, S119, and S122.

[0257] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0258] See also Figure 7 , Figure 7 yes Figure 6 Schematic diagram of the process of an embodiment of sub-step S104 in FIG.

[0259] like Figure 7 As shown, the sub-steps of S104 may specifically include:

[0260] S201, whether the storage device under test has completed the aging test.

[0261] If yes, jump to S205. If no, jump to S202.

[0262] S202: Whether the storage device under test needs to switch temperature.

[0263] Specifically, the aging test device determines whether the tested storage device switches the operating temperature from the first temperature range to the second temperature range, or switches from the second temperature range to the first temperature range.

[0264] If yes, jump to S203. If no, jump to S204.

[0265] S203, switching the aging test temperature.

[0266] Jump to S204.

[0267] S204: The storage device under test performs an aging test.

[0268] Among them, S204 corresponds to the above steps S106-S124, which will not be repeated here.

[0269] S205, the test ends.

[0270] The above scheme obtains the flash memory particle type of the storage device under test, obtains the corresponding test parameters from the configuration file using the flash memory particle type, forms a corresponding aging test program based on the test parameters, and performs an aging test on the storage device under test using the aging test program. The flash memory particle type of the storage device under test is used to automatically match the corresponding test parameters and determine the corresponding aging test program. The tester does not need to adjust the test parameters according to different flash memory particles, thereby improving the efficiency of the aging test. Furthermore, since the tester does not need to manually adjust the test parameters, the reliability of the aging test is also improved.

[0271] See also Figure 8 , Figure 8 The aging test device 300 of the present application includes a main control device 31 and at least one storage device 32 to be tested.

[0272] The main control device 31 includes at least one control unit 311, and at least one storage device under test 32 is coupled to the control unit 311. The control unit 311 implements the aging test method of the above embodiment when performing an aging test on at least one storage device under test.

[0273] Optionally, the storage device 32 under test may be a USB flash drive, a mobile hard disk, a solid-state hard disk, a read-only memory (ROM) or a random access memory (RAM), etc., which is not limited here.

[0274] In some application scenarios, the tested storage device 32 may be a flash memory chip. In some embodiments, the tested storage device 32 is a solid state drive without a main control unit, and the tested storage device 32 includes a printed circuit board, a flash memory chip; or includes a printed circuit board, a flash memory chip and a cache chip.

[0275] Furthermore, each batch of tested storage devices 32 in the aging test equipment 300 are storage devices of the same technical specification. In some embodiments, the tested storage devices 32 of the same batch undergoing the aging test are storage devices of the first technical specification. In other embodiments, the tested storage devices 32 of the same batch undergoing the aging test are storage devices of the second technical specification.

[0276] This application also provides a computer storage medium, please continue to refer to Fig. 9 , Fig. 9 It is a structural diagram of an embodiment of a computer storage medium provided in the present application. The computer storage medium 600 stores program data 61. When the program data 61 is executed by a processor, it is used to implement the aging test method of the above embodiment.

[0277] When the embodiments of the present application are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk.

[0278] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Equivalent structures or equivalent process changes made by utilizing the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for aging test of a storage device, characterized in that: The method comprises: Obtain the flash memory particle type of the tested storage device; Obtain corresponding test parameters from a configuration file using the flash memory particle type; forming a corresponding aging test program based on the test parameters; The aging test program is used to perform an aging test on the storage device under test.

2. The aging test method according to claim 1, characterized in that: The test parameters at least include a test type, the flash memory particle types include SLC particles and non-SLC particles; the test type includes one or more of reading, programming, and erasing; The step of performing an aging test on the storage device under test by using the aging test program includes: In response to the flash memory particle type being an SLC particle, performing a programming and erasing test and / or a low-level format test on the tested storage device, wherein the low-level format test includes performing an erasing, programming and reading test on the tested storage device.

3. The aging test method according to claim 2, characterized in that: The performing an aging test on the storage device under test by using the aging test program further includes: In response to the flash memory particle type being a non-SLC particle, the tested storage device is subjected to one or more tests selected from the group consisting of a read test, a programming and erasing test, a low-grid test, a maximum threshold voltage low-grid test, an SLC programming and erasing test, and an SLC low-grid test, wherein the maximum threshold voltage low-grid test includes performing an erasing and programming test on the tested storage device at a maximum threshold voltage corresponding to the flash memory particle.

4. The aging test method according to claim 3, characterized in that: The non-SLC particles include at least MLC particles, TLC particles or QLC particles, wherein when the flash memory particles are TLC particles, the highest threshold voltage is L7 voltage; when the flash memory particles are QLC particles, the highest threshold voltage is L15 voltage.

5. The aging test method according to claim 3, characterized in that: The step of performing an aging test on the storage device under test by using the aging test program includes: In response to the flash memory particle type being a non-SLC particle, an aging test is performed on the tested storage device according to an aging test procedure corresponding to the SLC particle.

6. The aging test method according to claim 1, characterized in that: The test parameters further include technical specifications of the tested storage device, the technical specifications including first technical specifications and second technical specifications, the first technical specifications being different from the second technical specifications; Before the step of performing an aging test on the storage device under test using the aging test program, the method further includes: In response to the technical specification of the tested storage device being a first technical specification, determining the aging temperature interval of the tested storage device to be a first temperature interval; The step of performing an aging test on the storage device under test by using the aging test program includes: The aging test is performed on the storage device under test using the aging test program in a first temperature range.

7. The aging test method according to claim 6, characterized in that: Before the step of performing an aging test on the storage device under test using the aging test program, the method further includes: In response to the technical specification of the tested storage device being the second technical specification, determining that the aging temperature interval of the tested storage device is the first temperature interval and the second temperature interval; the first temperature interval is greater than the second temperature interval; The step of performing an aging test on the storage device under test by using the aging test program includes: The aging test is performed on the storage device under test by using the aging test program alternately in the first temperature range and the second temperature range.

8. The aging test method according to claim 1, characterized in that: The step of obtaining the flash memory particle type of the tested storage device further includes: Obtaining flash memory batch information of the tested storage device; The method of obtaining corresponding test parameters from a configuration file using the flash memory particle type also includes: The corresponding test parameters are obtained from the configuration file using the flash memory particle type and the flash memory batch information.

9. An aging test device for a storage device, characterized in that: The aging test device of the storage device comprises a main control device and at least one storage device under test; The main control device includes at least one control unit, at least one storage device under test is coupled to the control unit, and the control unit implements the method according to any one of claims 1 to 8 when performing an aging test on the at least one storage device under test.

10. The aging test equipment according to claim 9, characterized in that: The tested storage devices in each batch in the aging test equipment are storage devices of the same technical specifications.

Images