Power module and manufacturing method thereof

Abstract

The invention relates to a power module and a manufacturing method thereof. The power module comprises a bottom layer lining plate which is used for bearing electronic components required by the power module; the plurality of power chips are arranged on the bottom layer lining plate and are used for detecting the working state of the power module, acquiring parameter data and regulating and controlling the power module; the upper-layer lining plate is arranged above the plurality of power chips, is connected with the plurality of power chips, and is used for connecting the electronic components carried by the bottom-layer lining plate to form a loop; and the plurality of metal terminals are arranged at the end part of the bottom layer lining plate. The cross sectional area of the interconnection structure can be increased by adopting the structure of the upper-layer lining plate and the bottom-layer lining plate, parasitic inductance is reduced by utilizing a mutual inductance cancellation effect, metal terminals are arranged in a close manner, the length of a current loop is shortened so as to reduce stray inductance, and mutual inductance of the current loop is effectively reduced and even eliminated by reasonably planning and arranging.

Description

Technical Field

[0001] The present application relates to the field of packaging technology, and in particular to a power module and a manufacturing method thereof. Background Art

[0002] Under the background of my country's dual carbon goals of "carbon peak and carbon neutrality", energy conservation and consumption reduction have become the focus of industrial development in various fields. The application of frequency conversion technology in energy saving and low carbon is of great importance, which has greatly promoted the development of its core component-power module. The third-generation semiconductor, namely wide bandgap semiconductor, refers to semiconductor materials with a bandgap width greater than 3.0eV, among which silicon carbide (SiC) materials have received widespread attention. Compared with the first-generation semiconductor material Si, SiC materials have a larger bandgap width, higher breakdown field strength and higher thermal conductivity.

[0003] In the related art, the driving metal terminal and the power terminal are usually connected in an integrated lead frame. The lead frame is connected to the backing plate by welding, sintering or ultrasonic welding, usually welded at the edge of the backing plate, and then the driving metal terminal and the chip are connected through the upper AMB backing plate.

[0004] However, the above-mentioned related technologies have simple design structures and are easy to implement, but the gate inductance is relatively large. At the same time, the use of lead frames also brings about the problem of requiring subsequent cutting and forming of metal terminals. Summary of the invention

[0005] Based on this, it is necessary to provide a power module and a manufacturing method thereof to address the problem of large gate inductance.

[0006] In a first aspect, the present application provides a power module. The power module comprises:

[0007] A bottom liner, used for carrying electronic components required for the power module;

[0008] A plurality of power chips, wherein the plurality of power chips are arranged on the bottom liner and are used to detect the working state of the power module, collect parameter data, and regulate the power module;

[0009] An upper lining plate, the upper lining plate is arranged above the plurality of power chips and connected to the plurality of power chips, and is used to connect the electronic components carried by the bottom lining plate to form a loop;

[0010] A plurality of metal terminals are arranged at the end of the bottom liner.

[0011] In one embodiment, the metal terminal includes a signal terminal and a power terminal. The signal terminal and the power terminal are both arranged at the end of the bottom substrate. The power terminal is a laminated terminal.

[0012] In one embodiment, the power terminal includes a DC terminal and an AC terminal, the DC terminal is arranged at one end of the bottom substrate, the AC terminal is arranged at the other end of the bottom substrate, and the signal terminal and the AC terminal are arranged at the same end of the bottom substrate.

[0013] In one embodiment, the DC terminal includes a DC positive terminal and a DC negative terminal, and there is at least one DC positive terminal and at least one DC negative terminal.

[0014] In one of the embodiments, the power module further includes a heat dissipation base plate, the bottom liner is placed on the heat dissipation base plate, and the heat dissipation base plate is provided with a plurality of heat dissipation teeth.

[0015] In one embodiment, the power module further includes a gate resistor, a thermistor and a copper pillar, wherein the gate resistor and the thermistor are both disposed on the bottom substrate, and the copper pillar is disposed on the power chip.

[0016] In one embodiment, the first end of the copper column is connected to the power chip, and the second end of the copper column is connected to the upper liner.

[0017] In a second aspect, the present application provides a method for manufacturing a power module, which is applicable to the power module described in any of the above embodiments. The manufacturing method comprises:

[0018] Performing preliminary sintering operation on the power chip and the bottom liner to obtain the initial substrate;

[0019] Performing an assembling operation on the assembly to be assembled and the initially manufactured substrate to obtain an assembled substrate;

[0020] The assembly substrate is plastic-sealed based on the plastic-sealed component to obtain a target power module.

[0021] In one embodiment, the preliminary sintering operation of the power chip and the bottom liner to obtain the initial substrate includes:

[0022] Performing mounting and fixing operations on the power chip and the bottom liner to obtain an initial substrate;

[0023] The initial substrate is subjected to pressure sintering operation to obtain a primary substrate.

[0024] In one embodiment, the step of assembling the component to be assembled and the initially manufactured substrate to obtain an assembled substrate includes:

[0025] Assembling a first component to be assembled among the components to be assembled at a target position of the initially manufactured substrate;

[0026] Performing wire bonding on the initially fabricated substrate on which the components to be assembled are assembled based on a preset bonding scheme to obtain a bonded substrate;

[0027] The bonded substrate and the second component to be assembled among the components to be assembled are sintered to obtain an assembled substrate.

[0028] The above-mentioned power module and its manufacturing method, by adopting the structure of the upper lining plate and the bottom lining plate, increase the cross-sectional area of ​​the interconnection structure, reduce the parasitic inductance by utilizing the mutual inductance cancellation effect, and set metal terminals at the end of the bottom lining plate. The metal terminals are arranged in similar positions, shortening the length of the current loop, reducing the response time of the inductor element to the current change and thus reducing the stray inductance. At the same time, through reasonable planning and layout, the mutual inductance generated by the current loop in the power module can be effectively reduced or even eliminated. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the structure of a power module provided in one embodiment of the present application.

[0030] Figure 2 A schematic diagram of the partial structure of a power module provided in one embodiment of the present application.

[0031] Figure 3 A schematic flow chart of a method for manufacturing a power module provided in one embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0033] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0034] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0035] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0036] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0037] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0038] In some embodiments, see Figure 1 , Figure 1A structural schematic diagram of a power module in an embodiment of the present application is shown. The power module provided in an embodiment of the present application includes a bottom lining, multiple power chips, multiple metal terminals and an upper lining. The multiple power chips are arranged on the bottom lining, and the multiple metal terminals are arranged at the end of the bottom lining. The upper lining is located above the multiple power chips, and the upper lining is connected to the power chips. The upper lining, the power chips and the electronic components on the bottom lining are connected to form a loop.

[0039] The power module also includes a packaging shell, which includes a packaging upper shell and a packaging lower shell. The packaging upper shell and the packaging lower shell are detachably connected to form a receiving cavity between the two. The bottom liner, multiple power chips and the metal terminals of the upper liner are all placed inside the packaging shell, and a part of the metal terminals passes through the end of the packaging shell. Optionally, the packaging upper shell and the packaging lower shell are connected by, but not limited to, bolt connection, clamping, magnetic connection, pin connection, etc.

[0040] In this embodiment, by adopting the structure of an upper lining plate and a bottom lining plate, the cross-sectional area of ​​the interconnection structure is increased, the parasitic inductance is reduced by utilizing the mutual inductance cancellation effect, and metal terminals are provided at the ends of the bottom lining plate. The metal terminals are arranged in similar positions, thereby shortening the length of the current loop, reducing the response time of the inductor element to the current change and thus reducing the stray inductance. At the same time, through reasonable planning and layout, the mutual inductance generated by the current loop in the power module can be effectively reduced or even eliminated.

[0041] It should be noted that the way the chip is connected on the substrate is crucial, and its selection depends on the specific circuit design of the power module. The circuit design of the power module can adopt a variety of different topologies, such as single tube, half bridge, full bridge, etc., and each topology has its applicable scenarios and advantages. It should be clear that these displayed topologies are not limited to the only choice in practical applications. This application covers a variety of possible chip parallel connection methods, whether it is a single tube, full bridge or other topology, all within the scope of protection of this application.

[0042] In some embodiments, the metal terminal includes a signal terminal and a power terminal, and the power terminal is a stacked terminal. A portion of the power terminal is disposed at a first end of the bottom substrate, and another portion of the power terminal is disposed at a second end of the bottom substrate.

[0043] In addition, metal terminals are crucial elements in circuit design, used to safely and reliably connect electrical lines and devices. They are usually made of materials with good electrical conductivity, such as alloys, iron or copper. When designing and selecting metal terminal materials, the key considerations are their electrical conductivity and durability. Good metal terminal design can significantly improve the operating reliability and safety of electrical systems, reduce potential failure risks, and thus ensure the long-term stable operation of equipment or systems.

[0044] and metal terminals are fixed to a structurally strong metal frame, called a lead frame, to ensure a secure connection and good electrical contact.

[0045] In some embodiments, see Figure 2 , Figure 2 FIG. 1 is a schematic diagram showing a partial structure of a power module provided in an embodiment of the present application. Figure 1 As shown, the power terminal includes a DC terminal and an AC terminal. The AC terminal is connected to the motor through the busbar as a power supply terminal, and the DC terminal is connected to the capacitor through the busbar as a load terminal. The DC terminal is arranged at the first end of the bottom liner, the AC terminal is arranged at the second end of the bottom liner, and the signal terminal and the AC terminal are arranged at the same end of the bottom liner.

[0046] It should be noted that the structure and layout of the liner play a vital role in the realization of circuit performance and function. A common design technique is to form multiple independent areas by cutting grooves on the substrate, which are called branch areas. This design can not only effectively isolate different functions or parts of the circuit, but also provide good electrical isolation and thermal management. In the design of the branch area, the circuit connection method can select a variety of topological structures according to the specific application requirements. For example, circuit topologies such as single tube, half bridge or full bridge can be adopted according to the requirements of the circuit, and connected through suitable conductive parts. As a bridge connecting different branch areas, the material selection and structural design of the conductive part are crucial. Commonly used conductive part materials include excellent conductive metal materials such as copper and aluminum, which have good conductivity and mechanical strength, and can ensure the stability and reliability of circuit connection. The structure of the conductive part is diverse, and different forms can be selected according to specific design requirements. For example, common conductive part structures include binding wires, binding belts and other conductive structure frames.

[0047] In some embodiments, the DC terminal includes a DC positive terminal and a DC negative terminal, and each of the DC positive terminal and the DC negative terminal is provided with at least one. Figure 1 and Figure 2 The DC terminal includes a DC negative terminal and two DC positive terminals. The DC positive terminal and the DC negative terminal can be distributed on the bottom liner in various ways. One distribution situation is that the DC negative terminal is placed between the two DC positive terminals.

[0048] In some embodiments, continue to refer to Figure 1 and Figure 2 The power module also includes a heat dissipation base plate, the bottom liner is arranged on the heat dissipation base plate, and the heat dissipation base plate is provided with a plurality of heat dissipation teeth.

[0049] In some embodiments, continue to refer to Figure 1 and Figure 2 The power module also includes a gate resistor, a thermistor and a copper pillar. The gate resistor and the thermistor are respectively placed at the corresponding assembly positions of the bottom liner according to the assembly plan of the power module. The copper pillar is placed on the power chip, the first end of the copper pillar is connected to the power chip, and the second end of the copper pillar is connected to the upper liner.

[0050] In an exemplary embodiment, the present application provides a power module, which includes a bottom liner, multiple power chips, multiple metal terminals, an upper liner, a heat sink and an assembly component, wherein the multiple power chips are placed on the bottom liner, the multiple metal terminals are placed at the end of the bottom liner, the upper liner is located above the multiple power chips, and the assembly components are placed at the assembly positions corresponding to the bottom liner according to the assembly scheme of the power module, the bottom liner is placed on the heat sink, and the heat sink is provided with multiple heat dissipation teeth. The assembly components include gate resistors, thermistors and copper pillars, and the gate resistors and thermistors are placed at the assembly positions corresponding to the bottom liner according to the assembly scheme of the power module. The copper pillar is placed on the power chip, the first end of the copper pillar is connected to the power chip, and the second end of the copper pillar is connected to the upper liner.

[0051] The power module also includes a packaging shell, which includes a packaging upper shell and a packaging lower shell, which are detachably connected to form a receiving cavity. The bottom liner, multiple power chips and the metal terminal of the upper liner are all arranged inside the packaging shell, and a part of the metal terminal passes through the end of the packaging shell.

[0052] The metal terminal includes a signal terminal and a power terminal, and the power terminal adopts a laminated terminal. A part of the power terminal is arranged at the first end of the bottom lining plate, and the other part of the power terminal is arranged at the second end of the bottom lining plate. The power terminal includes a DC terminal and an AC terminal. The AC terminal is connected to the motor through the busbar as the power supply end, and the DC terminal is connected to the capacitor through the busbar as the load end. The DC terminal is arranged at the first end of the bottom lining plate, the AC terminal is arranged at the second end of the bottom lining plate, and the signal terminal and the AC terminal are arranged at the same end of the bottom lining plate. The DC terminal includes a DC positive terminal and a DC negative terminal. The DC terminal includes a DC negative terminal and two DC positive terminals, and the DC negative terminal is arranged between the two DC positive terminals.

[0053] In some embodiments, see Figure 3 , Figure 3 A schematic flow chart of a method for manufacturing a power module provided in an embodiment of the present application is shown, and the method for manufacturing a power module includes:

[0054] Step 302, performing a preliminary sintering operation on the power chip and the bottom liner to obtain a primary substrate.

[0055] For example, a nano silver film is attached to the back of the power chip, and the silver film has a certain viscosity by heating the power chip. Optionally, the processing temperature is set to 150-180° C., the processing pressure is 2-5 MPa, and the processing time is 0.2-1 s.

[0056] Then the power chip with the silver film is fixed to the preset chip position of the bottom liner, and the chip is heated and pressure is applied to fix the chip on the bottom liner. Optionally, the processing temperature is set to 130~150℃, the bottom liner temperature is 130~150℃, the processing pressure is 3~5MPa, and the processing time is 0.2~1s.

[0057] The bottom liner with the chip fixed thereon is heated and pressurized, i.e., sintered, so that the organic matter in the silver film is completely volatilized and the silver particles are connected to each other to form a dense connection layer. Optionally, the sintering temperature is set to 230°C, the sintering pressure is 10-15MPa, and the sintering time is 5-10min. The bottom liner with the chip fixed thereon after sintering is set as the initial production substrate.

[0058] Step 304 , assembling the components to be assembled and the initially manufactured substrate to obtain an assembled substrate.

[0059] The components to be assembled include a first component to be assembled and a second component to be assembled.

[0060] Exemplarily, a first component to be assembled is placed on a primary substrate, bonding wires are welded on the primary substrate, and then the primary substrate with the bonding wires is assembled and welded with a second component to be assembled to obtain an assembled substrate.

[0061] Step 306 , performing a plastic packaging operation on the assembly substrate based on the plastic packaging component to obtain a target power module.

[0062] The plastic packaging component includes a plastic packaging container and plastic packaging materials.

[0063] Exemplarily, the assembly substrate is placed in a plastic container, and then the plastic material is injected into the plastic container, and the molding is completed under certain temperature, pressure, and time conditions to obtain the target power module. Optionally, the mold temperature is 160~200℃, the transfer pressure is 30~100kgf / cm2, the mold closing pressure is 80~160kgf / cm2, the transfer time is 20~40s, the curing time is 100~200s, the post-curing temperature is 175℃, and the post-curing time is 4~8h.

[0064] In some embodiments, a preliminary sintering operation is performed on the power chip and the bottom liner to obtain a preliminary fabricated substrate, including:

[0065] The power chip and the bottom liner are mounted and fixed to obtain an initial substrate; the initial substrate is pressurized and sintered to obtain a primary substrate.

[0066] For example, the silver film is transferred and fixed on the back of the chip, and the chip is heated and pressured by the suction head of the chip mounter with heating and pressurizing functions, so that the silver film has a certain viscosity and is fixed on the back of the chip. Optionally, the processing temperature is set to 150~180℃, the processing pressure is 2~5MPa, and the processing time is 0.2~1s.

[0067] The chip with the silver film pre-fixed on the back is mounted and fixed on the designed position on the bottom liner. The chip with the silver film pre-fixed on the back is mounted on the designed position by a chip mounter with heating and pressurizing functions. The chip is heated and pressured by the suction head to make the silver film have a certain viscosity, so that the chip position is fixed. Optionally, the processing temperature is set to 130~150℃, the bottom liner temperature is 130~150℃, the processing pressure is 3~5MPa, and the processing time is 0.2~1s.

[0068] The organic matter in the silver film is completely volatilized by heating and pressurizing, so that the silver particles are connected to each other to form a dense connection layer. A certain pressure is applied to the chip through a sintering furnace with a pressurizing function, and sintering is completed by pressurizing and heating. Optionally, the sintering temperature is set to 230°C, the sintering pressure is 10~15MPa, and the sintering time is 5~10min. The bottom liner with the chip fixed after sintering is set as the initial production substrate.

[0069] In some embodiments, performing an assembly operation on the assembly component and the pre-fabricated substrate to obtain an assembly substrate includes:

[0070] Assemble the first component to be assembled in the components to be assembled at the target position of the initially manufactured substrate; perform wire bonding on the initially manufactured substrate assembled with the components to be assembled based on a preset bonding scheme to obtain a bonded substrate; and perform a sintering operation on the bonded substrate and the second component to be assembled in the components to be assembled to obtain an assembled substrate.

[0071] The components to be assembled include a first component to be assembled and a second component to be assembled. The first component to be assembled includes a gate resistor, a thermistor, a lead frame, and a copper column. The second component to be assembled includes an upper lining plate and a heat dissipation base plate.

[0072] Exemplarily, the gate resistor, thermistor, lead frame, and copper pillar are pre-assembled at the designated position of the primary substrate, and the first assembly to be assembled is welded together by reflow soldering. Optionally, the welding temperature is 40-60°C, the preheating temperature is 200°C, the preheating time is 3-5min, the welding time is 3-5min, the vacuum time in the high temperature zone is 30-60s, and the sintering atmosphere is a mixture of nitrogen / formic acid.

[0073] Then, an ultrasonic bonding machine is used to apply pressure to the bonding wire, and the ultrasound causes the bonding wire to rub rapidly against the metallized surface of the welded area, causing plastic deformation of the bonding wire and the surface of the metallized layer, thereby forming a weld, and obtaining a bonded substrate.

[0074] Then the bonded substrate is welded to the upper lining plate, and the bonded substrate is welded to the heat dissipation bottom plate, so as to obtain the assembly substrate.

[0075] In an exemplary embodiment, the present application provides a method for manufacturing a power module, which is applicable to the power module described in any of the above embodiments. The manufacturing method includes:

[0076] The power chip and the bottom liner are mounted and fixed to obtain an initial substrate.

[0077] The initial substrate is subjected to a pressure sintering operation to obtain a primary substrate.

[0078] The first component to be assembled among the components to be assembled is assembled at a target position of the initially manufactured substrate.

[0079] Based on a preset bonding scheme, wire bonding is performed on the initially manufactured substrate on which the components to be assembled are assembled to obtain a bonded substrate.

[0080] The bonded substrate and the second assembly to be assembled are sintered to obtain an assembled substrate.

[0081] The assembly substrate is plastic-sealed based on the plastic-sealed component to obtain a target power module.

[0082] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0083] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A power module, characterized in that: The power module comprises: A bottom liner, used for carrying electronic components required for the power module; A plurality of power chips, wherein the plurality of power chips are arranged on the bottom liner and are used to detect the working state of the power module, collect parameter data, and regulate the power module; An upper lining plate, the upper lining plate is arranged above the plurality of power chips and connected to the plurality of power chips, and is used to connect the electronic components carried by the bottom lining plate to form a loop; A plurality of metal terminals are arranged at the end of the bottom liner.

2. The power module according to claim 1, characterized in that: The metal terminal comprises a signal terminal and a power terminal. The signal terminal and the power terminal are both arranged at the end of the bottom liner. The power terminal is a laminated terminal.

3. The power module according to claim 2, characterized in that: The power terminal includes a DC terminal and an AC terminal. The DC terminal is arranged at one end of the bottom liner, the AC terminal is arranged at the other end of the bottom liner, and the signal terminal and the AC terminal are arranged at the same end of the bottom liner.

4. The power module according to claim 3, characterized in that: The DC terminal includes a DC positive terminal and a DC negative terminal, and each of the DC positive terminal and the DC negative terminal is provided with at least one.

5. The power module according to claim 1, characterized in that: The power module further comprises a heat dissipation base plate, the bottom lining plate is arranged on the heat dissipation base plate, and the heat dissipation base plate is provided with a plurality of heat dissipation teeth.

6. The power module according to claim 1, characterized in that: The power module further comprises a gate resistor, a thermistor and a copper pillar. The gate resistor and the thermistor are both arranged on the bottom liner, and the copper pillar is arranged on the power chip.

7. The power module according to claim 6, characterized in that: The first end of the copper column is connected to the power chip, and the second end of the copper column is connected to the upper liner.

8. A method for manufacturing a power module, applicable to the power module according to any one of claims 1 to 7, characterized in that: The manufacturing method comprises: Performing preliminary sintering operation on the power chip and the bottom liner to obtain the initial substrate; Performing an assembling operation on the assembly to be assembled and the initially manufactured substrate to obtain an assembled substrate; The assembly substrate is plastic-sealed based on the plastic-sealed component to obtain a target power module.

9. The method for manufacturing a power module according to claim 8, characterized in that: The preliminary sintering operation is performed on the power chip and the bottom liner to obtain the primary substrate, including: Performing mounting and fixing operations on the power chip and the bottom liner to obtain an initial substrate; The initial substrate is subjected to pressure sintering operation to obtain a primary substrate.

10. The method for manufacturing a power module according to claim 8, characterized in that: The components to be assembled include a first component to be assembled and a second component to be assembled; the assembly operation of the components to be assembled and the initially manufactured substrate to obtain an assembled substrate includes: Assembling a first component to be assembled among the components to be assembled at a target position of the initially manufactured substrate; Performing wire bonding on the initially manufactured substrate on which the components to be assembled are assembled based on a preset bonding scheme to obtain a bonded substrate; The bonded substrate and the second component to be assembled among the components to be assembled are sintered to obtain an assembled substrate.

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