Perovskite solar cell module and preparation method thereof
By adopting multiple laser etching processes and combinations of different laser parameters in perovskite solar cell modules, the problem of excessive contact between the metal layer curl and the bottom electrode caused by laser etching is solved, which improves the yield of the component and reduces the Production cost.
Patent Information
- Application Number
- CN202411241773.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-05
- Publication Date
- 2024-12-13
AI Technical Summary
The existing laser etching process causes excessive contact between the metal layer and the bottom electrode in the manufacturing of perovskite solar cell modules, increasing the risk of circuit breakers and short circuits between the components and reducing the yield rate.
Using multiple laser etching processes, multiple wire trenches of different widths and positions are cut in perovskite solar cell modules, and the laser power and frequency are adjusted in each laser etching to reduce the curling edge of the metal electrode layer. The phenomenon prevents excessive contact between the curling edge and the bottom electrode.
It effectively reduces the occurrence of component short circuits, improves the yield rate of perovskite components, and saves R&D and production costs.
Smart Images
Figure CN119136574A_ABST
Abstract
Description
[Technical field]
[0001] The present invention relates to the field of perovskite solar cells, and in particular to a perovskite solar cell assembly and a preparation method thereof. [Background technology]
[0002] In the photovoltaic industry, perovskite modules, as the third generation of solar cells, have the characteristics of high theoretical efficiency and low preparation cost. For the manufacture of perovskite cells, laser etching process is usually required for the manufacture of modules. The existing laser etching process basically uses high-frequency and high-power lasers for one-time through-etching. Although this method saves etching time, the laser will be highly concentrated on the module membrane surface, resulting in edge collapse and peeling on both sides of the etching line, uneven surface of the etching line, and jagged cross-section, which greatly increases the risk of disconnection and short circuit between the sub-cells of the module and reduces the yield rate.
[0003] The present invention provides a perovskite solar cell module and a preparation method thereof, which reduce the possibility of excessive contact between the metal layer warping and the bottom electrode caused by the laser process, thereby improving the yield rate of perovskite module preparation and saving the preparation cost in the module research and development and production process. [Summary of the invention]
[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a perovskite solar cell module and a preparation method thereof, which can reduce the possibility of excessive contact between the metal layer warping and the bottom electrode caused by the laser process, thereby improving the yield rate of perovskite module preparation and saving preparation costs in the component research and development and production process.
[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0006] A perovskite solar cell module comprises, from bottom to top, a substrate, a bottom electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, a modified layer, and a top electrode layer. At least one P1 wire groove is cut on the bottom electrode, the P1 wire groove is filled with the same material as the first charge transport layer and is connected to the first charge transport layer, at least one P2 wire groove is cut in the first charge transport layer, the perovskite layer, the second charge transport layer, and the modified layer, the P2 wire groove is filled with the same material as the top electrode layer and is connected to the top electrode layer, at least one P3 wire groove is cut in the modified layer and the top electrode layer, and a P3.5 wire groove is cut inwardly on the same side of the P3 wire groove, penetrating the second charge transport layer, the perovskite layer, and the first charge transport layer from top to bottom, the P1 wire groove, the P2 wire groove, and the P3 wire groove are not on the same side, and the width of the P3.5 wire groove is smaller than that of the P3 wire groove.
[0007] Preferably, the width of the P1 line groove is 25 μm-40 μm, the width of the P2 line groove is 180 μm-220 μm, the width of the P3 line groove is 95 μm-103 μm, and the width of the P3.5 line groove is 78 μm-85 μm.
[0008] Preferably, the substrate is made of glass, the bottom electrode is a FTO transparent conductive layer, the first charge transport layer is NiOx, the perovskite layer is arranged on the first charge transport layer, the second charge transport layer is C60, the modification layer is bathocuproin, and the top electrode layer is Au.
[0009] Preferably, a method for preparing a perovskite solar cell module comprises the following steps:
[0010] (1) Cleaning the substrate using a cleaning agent;
[0011] (2) preparing a bottom electrode on one side of the substrate, the bottom electrode being a 480nm-510nm thick FTO transparent conductive layer, and performing a first laser etching process on the bottom electrode to form a P1 line groove, the P1 line groove penetrates the bottom electrode and contacts the substrate, and then cleaning is performed again;
[0012] (3) using magnetron sputtering to prepare NiOx with a thickness of 25 nm to 35 nm on the bottom electrode and in the P1 line groove to form a first charge transport layer as a hole transport layer;
[0013] (4) preparing a perovskite precursor solution on the second charge transport layer by a slit coating method to form a perovskite layer with a thickness of 585 nm to 600 nm;
[0014] (5) using a vapor deposition method to thermally evaporate C60 with a thickness of 20 nm on the perovskite to form a second charge transport layer as an electron transport layer, and thermally evaporate BCP with a thickness of 6 nm-10 nm on the second charge transport layer as a modification layer;
[0015] (6) performing a second laser etching process on the modified layer to form a P2 line groove, etching the modified layer, the first charge transport layer, the perovskite layer, and the second charge transport layer cleanly without damaging the bottom electrode, forming a P2 line groove with a width of 200 μm. The P2 line groove does not overlap with the P1 line groove and passes through the first charge transport layer to contact the bottom electrode;
[0016] (7) Au with a thickness of 70 nm to 90 nm is prepared as a top electrode on the modified layer by surface sputtering, and a third laser etching process is performed starting from the top electrode to form a P3 line groove, and the top electrode layer and the modified layer are etched cleanly without damaging the second charge protection layer to form a P3 line groove with a width of 100 μm. The P3 line groove does not overlap with the P2 line groove and the P1 line groove, and is in contact with the second charge transport layer;
[0017] (8) The fourth laser etching process is started in the P3 line groove to form a P3.5 line groove, and the first charge transport layer, the perovskite layer, and the second charge transport layer are etched cleanly without damaging the bottom electrode, forming a P3.5 line groove with a width of 80 μm, and finally obtaining a perovskite solar cell module.
[0018] Preferably, the bottom electrode is 500 nm thick, the first charge transport layer is 30 nm thick, the modification layer is 8 nm thick, the second charge transport layer is 20 nm thick, the top electrode is 80 nm thick, and the perovskite layer is 600 nm thick.
[0019] Preferably, in the first laser etching process, the laser focal length is set to 48.8 mm, the laser power is set to 2 W, the laser frequency is set to 30 kHz, and the laser pulse width is set to 15 ns.
[0020] Preferably, the second laser etching process sets the laser focal length to 64.45 mm, the laser power to 6 W, the laser frequency to 200 kHz, and the laser pulse width to 50 ns.
[0021] Preferably, the third laser etching process sets the laser focal length to 64.45 mm, the laser power to 4.1 W, the laser frequency to 50 kHz, and the laser pulse width to 50 ns.
[0022] Preferably, in the fourth laser etching process, the laser focal length is set to 64.45 mm, the laser power is set to 6.2 W, the laser frequency is set to 200 kHz, and the laser pulse width is set to 50 ns.
[0023] A solar cell comprises the perovskite solar cell assembly as described above.
[0024] The beneficial effects of the present invention are as follows:
[0025] 1. A perovskite solar cell module, the perovskite solar cell module is composed of a substrate, a bottom electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, a modified layer, and a top electrode layer from bottom to top, at least one P1 line groove is cut on the bottom electrode, and in this embodiment, it is one P1 line groove, the P1 line groove is filled with the same material as the first charge transport layer and connected to the first charge transport layer, and at least one P2 line groove is cut in the first charge transport layer, the perovskite layer, the second charge transport layer, and the modified layer, and in this embodiment, it is one A P2 line groove is provided, the P2 line groove is filled with the same material as the top electrode layer and is connected to the top electrode layer, at least one P3 line groove is cut in the modification layer and the top electrode layer, in this embodiment, it is a P3 line groove, and a P3.5 line groove is cut from top to bottom inside on the same side of the P3 line groove, penetrating the second charge transport layer, the perovskite layer, and the first charge transport layer, and the P1 line groove, the P2 line groove, and the P3 line groove are not on the same side, that is, the P1 line groove, the P2 line groove, and the P3 line groove are not on the same straight line, and the width of the P3.5 line groove is smaller than that of the P3 line groove.
[0026] In the common preparation process of perovskite components, laser is an indispensable process step. Optimizing the laser process can significantly improve the yield rate of perovskite components. Optimizing the laser process in the production process can effectively improve the yield rate of perovskite components, thereby greatly reducing production costs.
[0027] Single laser P3 etching needs to penetrate multiple protective layers, charge transfer layers and perovskite layers in sequence. The required energy is relatively high, which will accumulate a large amount of heat in the electrode layer and cause peeling and warping at the edges of the P3 line grooves in the electrode layer.
[0028] The size of these chipped edges is relatively small, usually less than 5μm in length. However, the depth of the P3 wire groove is generally small, which means that the warping of the electrode layer caused by the chipped edge phenomenon is extremely easy to overlap with the bottom electrode layer, causing a short circuit in the component, thereby causing the sub-batteries in the component to fail, greatly reducing the efficiency of the component, and may even cause the component to fail and eventually be scrapped.
[0029] In this embodiment, two laser processes are used for the P3 line groove. The third laser etching process uses a low-power, low-frequency laser beam, which can reduce the heat accumulation on the electrode layer to a minimum, greatly reducing the probability of edge collapse. The fourth laser etching process uses a relatively high power and frequency to penetrate multiple layers of charge transfer layers and perovskite layers to form a complete sub-battery while isolating the connection between the perovskite layer to prevent leakage of the perovskite layer and the charge transfer layer, leaving part of the perovskite layer to isolate the possible collapse of the metal electrode layer and the overlap of the bottom electrode.
[0030] The P3 wire slot of this embodiment adopts a stepped structure, which completely eliminates the phenomenon of overlapping the top electrode and the bottom electrode in the traditional P3 wire slot, can greatly improve the yield rate of perovskite component preparation, and save a lot of R&D costs and production costs.
[0031] The present invention uses a low-power, low-frequency, multi-line primary laser process and a high-power, high-frequency, few-line secondary laser process to scribe the P3 line groove multiple times to reduce the warping of the metal electrode P3 line groove and effectively reduce the short circuit phenomenon caused by excessive contact between the metal warping and the bottom electrode.
[0032] It effectively prevents the occurrence of component short circuits, thereby effectively improving the yield rate of the perovskite battery component preparation process and saving preparation costs during component research and development and production.
[0033] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and drawings.
Brief Description of the Drawings
[0034] The present invention will be further described below in conjunction with the accompanying drawings:
[0035] Figure 1 Schematic diagram of P1 line slot, substrate and bottom electrode;
[0036] Figure 2 Schematic diagram of P2 line slot, substrate, bottom electrode, first charge transport layer, perovskite layer, second charge transport layer, and modification layer;
[0037] Figure 3 Schematic diagram of P3 line slot, substrate, bottom electrode, first charge transport layer, perovskite layer, second charge transport layer, modification layer, and top electrode layer;
[0038] Figure 4 It is an overall schematic diagram of the first embodiment of the present invention. [Specific implementation method]
[0039] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0040] The following first describes the concepts involved in this application in conjunction with the accompanying drawings. It should be noted that the following description of each concept is only to make the content of this application easier to understand and does not limit the scope of protection of this application.
[0041] Embodiment 1:
[0042] A perovskite solar cell module, such as Figures 1 to 4 As shown, the perovskite solar cell component is, from bottom to top, a substrate 1, a bottom electrode 2, a first charge transport layer 3, a perovskite layer 4, a second charge transport layer 5, a modified layer 6, and a top electrode layer 7. At least one P1 line groove 8 is cut on the bottom electrode 2, and in this embodiment, it is one P1 line groove 8. The P1 line groove 8 is filled with the same material as the first charge transport layer 3 and connected to the first charge transport layer 3. At least one P2 line groove 9 is cut in the first charge transport layer 3, the perovskite layer 4, the second charge transport layer 5, and the modified layer 6. In this embodiment, it is one P2 line groove 9. The P2 line groove 9 is filled with the same material as the top electrode layer 7 and connected to the top electrode layer 7. At least one P3 line groove 10 is cut in the modified layer 6 and the top electrode layer 7. In this embodiment, it is one P3 line groove 10. The P3 line groove 10 is cut inside the same side direction from top to bottom through the second charge transport layer 5, the perovskite layer 4, the first charge transport layer The P3.5 line groove 11 of layer 3, and the P1 line groove 8, P2 line groove 9, and P3 line groove 10 are not on the same side, that is, the P1 line groove 8, P2 line groove 9, and P3 line groove 10 are not on the same straight line, and the width of the P3.5 line groove 11 is smaller than that of the P3 line groove 10. In this embodiment, the width of the P3.5 line groove 11 is smaller than that of the P3 line groove 10 to prevent the etching laser energy from being too high. The third laser etching process uses a low-power, low-frequency laser beam to reduce the heat accumulation on the electrode layer to a minimum, greatly reducing the probability of edge collapse. The fourth laser etching process uses a relatively high power and frequency to penetrate the multi-layer charge transfer layer and the perovskite layer 4 to form a complete sub-battery while isolating the connection of the perovskite layer 4 to prevent the perovskite layer 4 and the charge transfer layer from leaking electricity. Part of the perovskite layer 4 is reserved to isolate the possible collapse of the metal electrode layer and overlap with the bottom electrode 2.
[0043] In the common preparation process of perovskite components, laser is an indispensable process step. Optimizing the laser process can significantly improve the yield rate of perovskite components. Optimizing the laser process in the production process can effectively improve the yield rate of perovskite components, thereby greatly reducing production costs.
[0044] like Figure 4 As shown, single laser P3 etching needs to penetrate multiple protective layers, charge transfer layers and perovskite layer 4 in sequence, which requires high energy and will accumulate a large amount of heat in the electrode layer, causing peeling and warping of the edge of the electrode layer P3 line groove 10.
[0045] The size of these chipped edges is relatively small, usually less than 5μm in length, but the depth of the P3 line groove 10 is generally small, which means that the electrode layer warping caused by the chipped edge phenomenon is extremely easy to overlap with the bottom electrode 2 layer, causing the component to short-circuit, thereby causing the sub-batteries in the component to fail, greatly reducing the efficiency of the component, and may even cause the component to fail and eventually be scrapped.
[0046] In this embodiment, two laser processes are used for the P3 line groove 10. The third laser etching process uses a low-power, low-frequency laser beam, and the heat accumulation on the electrode layer can be reduced to a minimum, which greatly reduces the probability of edge collapse. The fourth laser etching process uses a relatively high power and frequency to penetrate the multi-layer charge transfer layer and the perovskite layer 4 to form a complete sub-battery while isolating the connection of the perovskite layer 4 to prevent the occurrence of leakage of the perovskite layer 4 and the charge transfer layer. Part of the perovskite layer 4 is reserved to isolate the possible collapse of the metal electrode layer and overlap with the bottom electrode 2.
[0047] The P3 wire slot 10 of this embodiment adopts a stepped structure, which completely eliminates the phenomenon of overlapping of the top electrode and the bottom electrode 2 in the traditional P3 wire slot 10, which can greatly improve the yield rate of perovskite component preparation and save a lot of R&D costs and production costs.
[0048] The present invention scribes the P3 line groove 10 multiple times through a low-power, low-frequency, multi-line primary laser process and a high-power, high-frequency, few-line secondary laser process to reduce the warping of the metal electrode P3 line groove 10 and effectively reduce the short circuit phenomenon caused by excessive contact between the metal warping and the bottom electrode 2.
[0049] It effectively prevents the occurrence of component short circuits, thereby effectively improving the yield rate of the perovskite battery component preparation process and saving preparation costs during component research and development and production.
[0050] The width of the P1 line groove 8 is 25μm-40μm, the width of the P2 line groove 9 is 180μm-220μm, the width of the P3 line groove 10 is 95μm-103μm, and the width of the P3.5 line groove 11 is 78μm-85μm.
[0051] In this embodiment, the width of the P1 line groove 8 is 30 μm, the width of the P2 line groove 9 is 200 μm, the width of the P3 line groove 10 is 100 μm, and the width of the P3.5 line groove 11 is 80 μm.
[0052] If the groove width is lower than the minimum value, it is easy to be penetrated by the laser, and if it is greater than the maximum value, the etching effect will be poor.
[0053] The substrate 1 is made of glass, the bottom electrode 2 is a FTO transparent conductive layer, the first charge transport layer 3 is NiOx, the second charge transport layer 5 is C60, the modification layer 6 is bathocuproin, the top electrode layer 7 is Au, and also includes a PVSK layer arranged on the substrate.
[0054] A method for preparing a perovskite solar cell module comprises the following steps:
[0055] (1) The substrate 1 is cleaned with a cleaning agent, and then ultrasonically cleaned in a cleaning agent dilution solution, deionized water, and hot anhydrous ethanol for 15 minutes, and then placed in a drying oven for drying;
[0056] (2) A bottom electrode 2 is prepared on one side of the substrate 1. The bottom electrode 2 is a 480nm-510nm thick FTO transparent conductive layer. A first laser etching process is performed on the bottom electrode 2 to form a P1 line groove 8. The first laser etching process sets the laser focal length to a positive focus of 48.8mm, the laser power to 2W, the laser frequency to 30kHz, the laser pulse width to 15ns, and the laser processing rate to 0.1m / s. The first laser etching process has the best laser etching effect. The P1 line groove 8 penetrates the bottom electrode 2 and contacts the substrate 1, and is cleaned again according to the previous step;
[0057] (3) using magnetron sputtering to prepare NiOx with a thickness of 25 nm to 35 nm on the bottom electrode 2 and in the P1 line groove 8 to form a first charge transport layer 3 as a hole transport layer;
[0058] (4) Weighing CsFAMA system perovskite precursor powder, dissolving it in a mixed solution of DMF (N,N-dimethylformamide) and NMP (N-methylpyrrolidone), stirring at a constant temperature of 25° C. for at least 12 h to prepare a perovskite precursor solution, and then using a slit coating method to prepare the perovskite precursor solution on the second charge transport layer 5 to form a 585 nm-600 nm thick perovskite layer 4;
[0059] (5) using a vapor deposition method to thermally evaporate C60 with a thickness of 20 nm on the perovskite to form a second charge transport layer 5 as an electron transport layer, and thermally evaporate BCP with a thickness of 6 nm-10 nm on the second charge transport layer 5 as a modification layer 6, where the BCP is bathocuproin;
[0060] (6) Performing a second laser etching process on the modified layer 6 to form a P2 line groove 9, setting the laser focal length to 64.45 mm, the laser power to 6 W, the laser frequency to 200 kHz, the laser pulse width to 50 ns, and the laser processing rate to 0.1 m / s. The second laser etching process has the best laser etching effect, and the modified layer 6, the first charge transport layer 3, the perovskite layer 4, and the second charge transport layer 5 are etched cleanly without damaging the bottom electrode 2, forming a P2 line groove 9 with a width of 200 μm. The P2 line groove 9 does not overlap with the P1 line groove 8, and passes through the first charge transport layer 3 to contact the bottom electrode 2;
[0061] (7) Au with a thickness of 70nm-90nm is prepared as a top electrode on the modified layer 6 by surface sputtering, and a third laser etching process is performed from the top electrode to form a P3 line groove 10, and the laser focal length is set to be 64.45mm at the positive focus, the laser power is 4.1W, the laser frequency is 50kHz, the laser pulse width is 50ns, and the laser processing rate is 0.1m / s. The third laser etching process has the best laser etching effect, and the top electrode layer 7 and the modified layer 6 are etched cleanly without damaging the second charge protection layer to form a P3 line groove 10 with a width of 100μm. The P3 line groove 10 does not overlap with the P2 line groove 9 and the P1 line groove 8, and is in contact with the second charge transport layer 5;
[0062] (8) The fourth laser etching process is started in the P3 line groove 10 to form a P3.5 line groove 11. The laser focal length is set to 64.45 mm, the laser power is 6.2 W, the laser frequency is 200 kHz, the laser pulse width is 50 ns, and the laser processing rate is 0.1 m / s. The fourth laser etching process has the best laser etching effect. The first charge transport layer 3, the perovskite layer 4, and the second charge transport layer 5 are etched cleanly without damaging the bottom electrode 2, forming a P3.5 line groove 11 with a width of 80 μm, and finally obtaining a perovskite solar cell module.
[0063] Preferably, the bottom electrode 2 is 500 nm thick, the first charge transport layer 3 is 30 nm thick, the modification layer 6 is 8 nm thick, the second charge transport layer 5 is 20 nm thick, the top electrode is 80 nm thick, and the perovskite layer 4 is 600 nm thick. The yield rate of perovskite solar cell modules with such thickness is high.
[0064] A solar cell comprises the perovskite solar cell assembly as described above.
[0065] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.
Claims
1. A perovskite solar cell module, characterized in that: The perovskite solar cell assembly comprises, from bottom to top, a substrate, a bottom electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, a modified layer, and a top electrode layer. At least one P1 wire groove is cut on the bottom electrode, and the P1 wire groove is filled with the same material as the first charge transport layer and connected to the first charge transport layer. At least one P2 wire groove is cut in the first charge transport layer, the perovskite layer, the second charge transport layer, and the modified layer, and the P2 wire groove is filled with the same material as the top electrode layer and connected to the top electrode layer. At least one P3 wire groove is cut in the modified layer and the top electrode layer, and a P3.5 wire groove is cut inside on the same side of the P3 wire groove, which penetrates the second charge transport layer, the perovskite layer, and the first charge transport layer from top to bottom, and the P1 wire groove, the P2 wire groove, and the P3 wire groove are not on the same side, and the width of the P3.5 wire groove is smaller than that of the P3 wire groove.
2. A perovskite solar cell module according to claim 1, characterized in that: The width of the P1 line groove is 25μm-40μm, the width of the P2 line groove is 180μm-220μm, the width of the P3 line groove is 95μm-103μm, and the width of the P3.5 line groove is 78μm-85μm.
3. A perovskite solar cell module according to claim 1, characterized in that: The substrate is made of glass, the bottom electrode is a FTO transparent conductive layer, the first charge transport layer is NiOx, the perovskite layer is arranged on the first charge transport layer, the second charge transport layer is C60, the modification layer is bathocuproin, and the top electrode layer is Au.
4. A method for preparing a perovskite solar cell module, used for preparing the perovskite solar cell module according to any one of claims 1 to 3, characterized in that: The following steps are involved: (1) cleaning the substrate using a cleaning agent; (2) preparing a bottom electrode on one side of the substrate, wherein the bottom electrode is a 480nm-510nm thick FTO transparent conductive layer, and performing a first laser etching process on the bottom electrode to form a P1 line groove, wherein the P1 line groove penetrates the bottom electrode and contacts the substrate, and then cleaning is performed again; (3) using magnetron sputtering to prepare NiOx with a thickness of 25 nm to 35 nm on the bottom electrode and in the P1 line groove to form a first charge transport layer as a hole transport layer; (4) preparing a perovskite precursor solution on the first charge transport layer by a slit coating method to form a perovskite layer with a thickness of 585 nm to 600 nm; (5) thermally evaporating C60 with a thickness of 20 nm on the perovskite to form a second charge transport layer as an electron transport layer, and thermally evaporating BCP with a thickness of 6 nm-10 nm on the second charge transport layer as a modification layer; (6) performing a second laser etching process on the modified layer to form a P2 line groove, etching the modified layer, the first charge transport layer, the perovskite layer, and the second charge transport layer cleanly without damaging the bottom electrode, to form a P2 line groove with a width of 200 μm, wherein the P2 line groove does not overlap with the P1 line groove and passes through the first charge transport layer to contact the bottom electrode; (7) preparing Au with a thickness of 70 nm to 90 nm as a top electrode on the modified layer by surface sputtering, performing a third laser etching process from the top electrode to form a P3 line groove, etching the top electrode layer and the modified layer cleanly without damaging the second charge protection layer to form a P3 line groove with a width of 100 μm, wherein the P3 line groove does not overlap with the P2 line groove and the P1 line groove, and is in contact with the second charge transport layer; (8) Starting the fourth laser etching process in the P3 line groove to form a P3.5 line groove, the first charge transport layer, the perovskite layer, and the second charge transport layer are etched cleanly without damaging the bottom electrode, forming a P3.5 line groove with a width of 80 μm, and finally obtaining a perovskite solar cell module.
5. A method for preparing a perovskite solar cell module according to claim 4, characterized in that: The bottom electrode has a thickness of 500 nm, the first charge transport layer has a thickness of 30 nm, the modification layer has a thickness of 8 nm, the second charge transport layer has a thickness of 20 nm, the top electrode has a thickness of 80 nm, and the perovskite layer has a thickness of 600 nm.
6. A method for preparing a perovskite solar cell module according to claim 4, characterized in that: The first laser etching process sets the laser focal length to 48.8 mm, the laser power to 2 W, the laser frequency to 30 kHz, and the laser pulse width to 15 ns.
7. A method for preparing a perovskite solar cell module according to claim 4, characterized in that: The second laser etching process sets the laser focal length to 64.45 mm, the laser power to 6 W, the laser frequency to 200 kHz, and the laser pulse width to 50 ns.
8. A method for preparing a perovskite solar cell module according to claim 4, characterized in that: The third laser etching process sets the laser focal length to 64.45 mm, the laser power to 4.1 W, the laser frequency to 50 kHz, and the laser pulse width to 50 ns.
9. A method for preparing a perovskite solar cell module according to claim 4, characterized in that: The fourth laser etching process sets the laser focal length to 64.45 mm, the laser power to 6.2 W, the laser frequency to 200 kHz, and the laser pulse width to 50 ns.
10. A solar cell, characterized in that: The solar cell comprises the perovskite solar cell module according to any one of claims 1 to 9.