Device and method for measuring contamination and lithographic apparatus having said device

CN119137543APending Publication Date: 2024-12-13ASML NETHERLANDS BV
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Patent Information

Application Number
CN202380037789.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-05-04
Filing Date
2023-05-03
Publication Date
2024-12-13

AI Technical Summary

Technical Problem

Carbon contamination in lithographic apparatuses using extreme ultraviolet (EUV) radiation leads to performance drift in sensors and references, necessitating frequent purification and sensor matching, which reduces machine availability and increases downtime.

Method used

A device comprising a layer of non-conductive material, a semi-metallic layer, and electrodes for measuring resistivity changes, allowing real-time monitoring and quantification of contamination, thereby reducing the need for frequent calibration and increasing machine availability.

Benefits of technology

The device enables real-time monitoring and quantification of carbon contamination, allowing for reduced calibration frequency and increased uptime of the lithographic apparatus by predicting and correcting sensor output drift.

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Abstract

The present disclosure provides an apparatus and method for measuring contamination. The device comprises: a layer of non-conductive material; a layer of semimetal, the layer of semimetal being arranged on the layer of non-conductive material; at least one set of electrodes, each electrode being in electrical contact with the layer of semimetal; and a source of voltage or current, the source of voltage or current being connected to the at least two electrodes. The semimetal may be graphene. The non-conductive material may be hexagonal boron nitride. The method comprises measuring a change in resistivity of the layer of the semimetal using a voltage source and / or a current source connected to the at least two electrodes.
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