Oscillator circuit

Abstract

The invention discloses an oscillator circuit, relates to the technical field of oscillators, and aims to solve the problem of low anti-interference performance of an oscillator in the prior art. The oscillator circuit includes: a target oscillator; a signal input end and a signal output end of the target oscillator are respectively connected with an amplitude adjusting circuit; each amplitude adjusting circuit comprises a peak detection control circuit and an absorption negative resistance circuit; the peak detection control circuit is coupled with the negative resistance absorption circuit in a heat exchange mode, and the peak detection control circuit limits the increasing speed of the peak average voltage; the negative resistance absorption circuit absorbs negative resistance generated by the target oscillator to adjust the amplitude of the target oscillator. Direct connection between the peak detection control circuit and the negative resistance absorption circuit is isolated through a heat exchange coupling mode, interference of harmful harmonic waves in the peak detection control circuit on the negative resistance absorption circuit is reduced, and the anti-interference performance of the target oscillator is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of oscillators, and in particular to an oscillator circuit. Background Art

[0002] Most crystal oscillators now use the pierce oscillator structure, but due to the different characteristics of the external crystal oscillator, or the external temperature characteristics causing the crystal oscillator and oscillator characteristics to change, as well as the different application circuits and PCB layout parasitics, the negative resistance energy provided by the oscillator does not match the energy required by the crystal, so the oscillation amplitude of the oscillator will change greatly during the application process. The existing technology is to control the oscillation amplitude by adjusting the oscillator current, or adjusting the load capacitance at both ends of the oscillator, or to stabilize the amplitude by making the entire circuit and crystal oscillator work in a constant temperature environment, but the anti-interference performance of the oscillator still needs to be improved. Summary of the invention

[0003] The object of the present invention is to provide an oscillator circuit for improving the anti-interference performance of the oscillator.

[0004] In order to achieve the above object, the present invention provides the following technical solutions:

[0005] The present invention provides an oscillator circuit, comprising: a target oscillator; a signal input end and an output end of the target oscillator are respectively connected to an amplitude adjustment circuit; each amplitude adjustment circuit comprises a peak detection control circuit and an absorption negative resistance circuit; the peak detection control circuit is coupled with the absorption negative resistance circuit by heat exchange, the peak detection control circuit limits the speed of increasing the peak average voltage; the absorption negative resistance circuit absorbs the negative resistance generated by the target oscillator to adjust the amplitude of the target oscillator.

[0006] Compared with the prior art, an oscillator circuit provided by the present invention is connected to an amplitude adjustment circuit at the signal input end and the output end of the target oscillator respectively, and in each amplitude adjustment circuit, the peak detection control circuit is connected to the absorption negative resistance circuit by a hot exchange method, so that the direct connection between the peak detection control circuit and the absorption negative resistance circuit is isolated by the hot exchange coupling method, thereby reducing the interference of harmful harmonics in the peak detection control circuit on the absorption negative resistance circuit, and improving the anti-interference performance of the target oscillator. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0008] Figure 1 A schematic diagram of the circuit structure of an oscillator circuit provided by one embodiment of the present invention;

[0009] Figure 2 A schematic diagram of the circuit structure of a peak detection control circuit provided by one embodiment of the present invention;

[0010] Figure 3 A schematic diagram of a partial circuit structure of a peak detection control circuit provided by an embodiment of the present invention;

[0011] Figure 4 A schematic diagram of the circuit structure of a negative resistance absorption circuit provided in one embodiment of the present invention.

[0012] Reference numerals:

[0013] 10-target oscillator; 11-amplitude adjustment circuit; 20-peak detection control circuit; 21-auxiliary oscillator; 22-mixer; 23-analog-to-digital converter; 24-peak detection module; 25-intermediate control module; 26-peak average calculation module; 30-negative resistance absorption circuit; 31-startup module; 32-temperature sensing module; 33-negative resistance absorption module. DETAILED DESCRIPTION

[0014] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0015] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0016] In the present invention, "at least one" means one or more, "more than one" means two or more. "And / or" describes the association relationship of the associated objects, indicating that three types of relationships may exist.

[0017] like Figure 1As shown, an embodiment of the present invention provides a target oscillator 10; a signal input end and a signal output end of the target oscillator are respectively connected to an amplitude adjustment circuit 11; each amplitude adjustment circuit 11 includes a peak detection control circuit 20 and an absorption negative resistance circuit 30; the peak detection control circuit 20 and the absorption negative resistance circuit 30 are coupled by heat exchange;

[0018] The peak detection control circuit 20 controls the negative resistance absorption circuit 30 to absorb the negative resistance generated by the target oscillator 10 to adjust the amplitude of the target oscillator.

[0019] The target oscillator may adopt a pierce oscillator structure.

[0020] The first function of the amplitude adjustment circuit 11 is to make the signal at the signal input end of the target oscillator 10 oscillate within the first preset target oscillation range, and stabilize the signal at the input end; it is understandable that the second function of the amplitude adjustment circuit 11 is to make the signal at the signal output end of the target oscillator 10 oscillate within the second preset target oscillation range, and stabilize the signal at the output end. In this way, the oscillation stability of the entire target oscillator is improved, thereby improving the signal quality.

[0021] Alternatively, if Figure 1 As shown, in terms of circuit structure, the target oscillator may include a current source I, a ninth NMOS transistor N9, a fifth resistor R5, a crystal oscillator element X, a second capacitor C2, and a third capacitor C3;

[0022] The first end of the current source I is connected to the corresponding current, and the drain of the ninth NMOS transistor N9 and the first end of the fifth resistor R5 are connected to the second end of the current source I;

[0023] The second end of the fifth resistor R5, the gate of the ninth NMOS transistor N9, the first end of the crystal oscillator element X and the first end of the second capacitor C2 are all connected to the signal input end of the target oscillator; the source of the ninth NMOS transistor N9 is grounded; the second end of the second capacitor C2 is grounded;

[0024] The second end of the crystal oscillator element X and the first end of the third capacitor C3 are both connected to the drain of the ninth NMOS transistor N9; the second end of the third capacitor C3 is grounded;

[0025] The peak detection control circuit 20 and the negative resistance absorption circuit 30 are both connected to the signal input terminal of the target oscillator 10 or the signal output terminal of the target oscillator 10 .

[0026] From the above content, it can be seen that compared with the traditional oscillator circuit, when designing the amplitude adjustment circuit, the embodiment of the present invention designs the peak detection control circuit 20 and the absorption negative resistance circuit 30 in the amplitude adjustment circuit 11 to be coupled by heat exchange. The advantage of this is that it avoids direct connection between the peak detection control circuit 20 and the absorption negative resistance circuit 30, that is, there is no direct current or voltage transmission between the two circuits, but they are coupled by heat exchange. In this way, the interference of useless clutter in the peak detection control circuit to the absorption negative resistance circuit is reduced. For example, the influence of unnecessary harmonic signals (such as second harmonic signals, third harmonic signals and fourth harmonic signals, etc.) can be avoided, and the stability of the amplitude of the input signal or output signal of the target oscillator is improved, that is, the signal quality of the target oscillator is improved.

[0027] Alternatively, if Figure 2 As shown, the peak detection control circuit 20 includes an auxiliary oscillator 21, a mixer 22, an analog-to-digital converter 23, a peak detection module 24, an intermediate stage control module 25, and a peak average calculation module 26;

[0028] The auxiliary oscillator 21 is connected to the mixer 22, and the mixer 22 performs frequency mixing on the signal at the signal input end (e.g., osc-in) of the target oscillator 10 or the signal at the signal output end (osc-out) of the target oscillator 10 with the signal output by the auxiliary oscillator 21;

[0029] The output end of the mixer 22 is connected to the input end of the analog-to-digital converter 23; the analog-to-digital converter 23 is used to convert the analog signal output by the mixer 22 into a digital signal;

[0030] The output end of the analog-to-digital converter 23 is connected to the input end of the peak detection module 24; the output end of the peak detection module 24 is connected to the input end of the intermediate control module 25; the output end of the intermediate control module 25 is connected to the input end of the peak average calculation module 26; the voltage output end of the peak average calculation module 26 outputs the peak average voltage, and the voltage output end of the peak average calculation module 26 is connected to the peak voltage input end of the intermediate control module 25; the voltage output end of the peak average calculation module 26 is connected to the peak voltage input end of the peak detection module 24;

[0031] When the output signal of the analog-to-digital converter 23 is greater than the peak-to-average voltage, the peak detection module 24 outputs a corresponding signal to the intermediate control module 25 ; the peak-to-average calculation module 26 calculates the peak-to-average voltage.

[0032] Specifically, when the output signal of the analog-to-digital converter 23 is greater than the peak average voltage, the peak detection module 24 outputs a high level signal and a low level signal to the intermediate control module 25, and the peak average voltage is obtained based on a high level signal and a low level signal.

[0033] Alternatively, if Figure 3 As shown, the peak detection module 24 includes a first PMOS transistor P1, a second PMOS transistor P2, a first NMOS transistor N1, a second NMOS transistor N2 and a third NMOS transistor N3;

[0034] The source of the first PMOS transistor P1 and the source of the second PMOS transistor P2 are connected to the corresponding power supply voltage; the gate of the first PMOS transistor P1 is connected to the gate of the second PMOS transistor P2, and the gate of the first PMOS transistor P1 and the gate of the second PMOS transistor P2 are both connected to the drain of the first PMOS transistor P1 through the node a;

[0035] The drain of the first PMOS tube P1 is connected to the drain of the first NMOS tube N1; the drain of the second PMOS tube P2 is connected to the drain of the second NMOS tube N2; the source of the first NMOS tube N1 and the source of the second NMOS tube N2 are both connected to the drain of the third NMOS tube N3, the source of the third NMOS tube N3 is grounded, and the gate of the third NMOS tube N3 is connected to the corresponding reference voltage;

[0036] The gate of the first NMOS transistor N1 is connected to the output end of the analog-to-digital converter 23; the gate of the second NMOS transistor N2 is connected to the voltage output end of the peak average calculation module 26 as the peak voltage input end of the peak detection module 24, thereby accessing the peak average voltage.

[0037] like Figure 3 As shown, the intermediate control module 25 includes a third PMOS transistor P3, a fourth PMOS transistor P4, a fourth NMOS transistor N4, a fifth NMOS transistor N5, a sixth NMOS transistor N6 and a seventh NMOS transistor N7;

[0038] The gate of the third PMOS transistor P3 is connected to the peak voltage input terminal of the intermediate control module 25 and the voltage output terminal of the peak average calculation module 26, so as to access the peak average voltage; the source of the third PMOS transistor P3 is connected to the node a; the gate of the fourth PMOS transistor P4 and the drain of the fourth NMOS transistor N4 are both connected to the drain of the third PMOS transistor P3; the gate of the fourth NMOS transistor N4 is connected to the corresponding reference voltage, and the source of the fourth NMOS transistor N4 is grounded;

[0039] The source of the fourth PMOS tube P4 and the drain of the fifth NMOS tube N5 are both power input terminals, connected to the corresponding power supply voltage; the drain of the fourth PMOS tube P4 is connected to the source of the fifth NMOS tube N5; the gate of the fifth NMOS tube N5 is connected to the drain of the second PMOS tube P2;

[0040] The source of the fifth NMOS transistor N5 is also connected to the drain of the sixth NMOS transistor N6; the gate of the sixth NMOS transistor N6 is connected to the gate of the first NMOS transistor N1;

[0041] The source of the sixth NMOS tube N6 is connected to the drain of the seventh NMOS tube N7; the gate of the seventh NMOS tube N7 is connected to the corresponding reference voltage; and the source of the seventh NMOS tube N7 is grounded.

[0042] like Figure 3 As shown, the peak average calculation module 26 includes a diode D1, a first capacitor C1, an eighth NMOS transistor N8 and a heating resistor R0;

[0043] The first end of the diode D1 is connected to the source electrode N5 of the fifth NMOS transistor; the first end of the first capacitor C1 and the gate electrode of the eighth NMOS transistor N8 are both connected to the second end of the diode D1; the second end of the diode D1 serves as the voltage output end of the peak average calculation module 26 to output the peak average voltage; the second end of the first capacitor C1 is grounded;

[0044] The drain of the eighth NMOS tube N8 is connected to the corresponding power supply voltage; the source of the eighth NMOS tube N8 is connected to the first end of the heating resistor R0; and the second end of the heating resistor R0 is grounded.

[0045] It can be seen from the above that when the output signal of the output end of the analog-to-digital converter 23 is greater than the peak average voltage, the first PMOS transistor P1, the second PMOS transistor P2, the first NMOS transistor N1 and the second NMOS transistor N2 in the peak detection module 24 output a high-level signal to the fifth NMOS transistor N5, and output a low-level signal to the sixth PMOS transistor P6, and the two MOS transistors N5 and P6 are turned on to provide current to the diode D1 in the peak average calculation module 26, so that the voltage on the first capacitor C1, that is, the peak average voltage, is increased, thereby increasing the output power of the eighth NMOS transistor N8 and the heating power of the heating resistor R0. Among them, the third NMOS transistor N3, the fourth NMOS transistor N4 and the seventh NMOS transistor N7 are current sources, and the sixth NMOS transistor N6 and the third PMOS transistor P3 are used to limit the speed of increasing the peak average voltage.

[0046] Alternatively, if Figure 4As shown, the negative resistance absorption circuit 30 includes a starting module 31, a temperature sensing module 32 and a negative resistance absorption module 33; the starting module 31, the temperature sensing module 32 and the negative resistance absorption module 33 are connected in pairs; the heating resistor R0 transfers heat to the temperature sensing module 32 by heat transfer.

[0047] exist Figure 4 In the embodiment, the startup module 31 includes a fifth PMOS transistor P5, a sixth PMOS transistor P6 and a first resistor R1;

[0048] The source of the fifth PMOS transistor P5 is connected to the corresponding power supply voltage; the first end of the first resistor R1 and the gate of the sixth PMOS transistor P6 are both connected to the drain of the fifth PMOS transistor P5; the drain of the sixth PMOS transistor P6 is grounded;

[0049] The gate of the fifth PMOS transistor P5 and the drain of the sixth PMOS transistor P6 are both connected to the temperature sensing module 32;

[0050] The gate of the fifth PMOS transistor P5 and the source of the sixth PMOS transistor P6 are also connected to the negative resistance absorption module 33 .

[0051] exist Figure 4 In the embodiment, the temperature sensing module 32 includes a first transistor T1, a second transistor T2, a third transistor T3 and a second resistor R2;

[0052] The collector of the first transistor T1 is connected to the corresponding power supply voltage, and the base of the first transistor T1 is connected to the collector of the second transistor T2;

[0053] The base of the second transistor T2 and the base of the third transistor T3 are both connected to the emitter of the first transistor T1; the emitter of the third transistor T3 is connected to the first end of the second resistor R2; the second end of the second resistor R2 and the emitter of the second transistor T2 are both grounded;

[0054] The collector of the third transistor T3 is connected to the base of the fifth PMOS transistor P5;

[0055] The collector of the third transistor T3 is also connected to the source of the sixth PMOS transistor P6.

[0056] exist Figure 4 In the embodiment, the negative resistance absorption module 33 includes a seventh PMOS transistor P7, an eighth PMOS transistor P8, a ninth PMOS transistor P9, a third resistor R3, a fourth resistor R4 and a fourth transistor T4;

[0057] The gate of the seventh PMOS tube P7, the gate of the eighth PMOS tube P8 and the gate of the ninth PMOS tube P9 are all connected to the gate of the fifth PMOS tube P5;

[0058] The source of the seventh PMOS tube P7, the source of the eighth PMOS tube P8 and the source of the ninth PMOS tube P9 are all connected to the corresponding power supply voltage;

[0059] The collector of the second transistor T2 is connected to the drain of the seventh PMOS transistor P7;

[0060] The collector of the third transistor T3 and the source of the sixth PMOS transistor P6 are both connected to the drain of the eighth PMOS transistor P8;

[0061] The drain of the ninth PMOS transistor P9 is connected to the first end of the third resistor R3; the base of the fourth transistor T4 and the first end of the fourth resistor R4 are both connected to the second end of the third resistor R3; the second end of the fourth resistor R4 and the emitter of the fourth transistor T4 are both grounded;

[0062] The collector of the fourth transistor T4 is connected to the signal input terminal of the target oscillator 10 or the signal output terminal of the target oscillator 10 as a negative resistance absorption terminal.

[0063] It can be understood that in the negative resistance absorption circuit 30, when the temperature rises, the current generated in the temperature sensing module 32 composed of the first transistor T1, the second transistor T2, the third transistor T3 and the second resistor R2 increases, and after being mirrored by the seventh PMOS transistor P7, the eighth PMOS transistor P8 and the ninth PMOS transistor P9, the voltage on the fourth resistor R4 also increases with temperature. At the same time, the threshold voltage of the fourth transistor T4 decreases with temperature. Therefore, the negative resistance absorption end can absorb more negative resistance as the temperature rises.

[0064] From the above content, it can be seen that in a traditional oscillator circuit, when the amplitude (voltage oscillation amplitude or current oscillation amplitude) of the target oscillator is adjusted, a constant temperature crystal oscillator is often used in the target oscillator. The constant temperature crystal oscillator requires a large amount of heat, and the power is at the watt (W) level. This is because the entire target oscillator needs to be in a constant temperature environment to ensure that the amplitude oscillates stably within the target amplitude range. In the embodiment of the present invention, the entire target oscillator does not need to be in a constant temperature environment, but the heating resistor wire in the peak detection module and the temperature sensing module in the negative resistance absorption circuit are used to transfer heat to absorb the negative resistance in the target oscillator. Therefore, the heat generated by the embodiment of the present invention is very small (the power is at the mW level), and it is only necessary to change the temperature near the negative resistance absorption circuit, and there is no need to globally control the temperature to a constant value.

[0065] In a specific implementation, the osc-in or osc-out amplitude control range is 100mV to 300mV. When the amplitude is >300mV, the negative resistance absorption is reduced, and when the amplitude is <100mV, the negative resistance absorption is increased.

[0066] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0067] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.

Claims

1. An oscillator circuit, characterized in that: include: Target oscillator; The signal input end of the target oscillator and the signal output end of the target oscillator are respectively connected to an amplitude adjustment circuit; each amplitude adjustment circuit includes a peak detection control circuit and an absorption negative resistance circuit; the peak detection control circuit is coupled to the absorption negative resistance circuit by heat exchange; The peak detection control circuit controls the negative resistance absorption circuit to absorb the negative resistance generated by the target oscillator to adjust the amplitude of the target oscillator.

2. The oscillator circuit according to claim 1, characterized in that The peak detection control circuit includes an auxiliary oscillator, a mixer, an analog-to-digital converter, a peak detection module, an intermediate stage control module, and a peak average calculation module; The auxiliary oscillator is connected to the mixer, and the mixer performs frequency mixing on a signal at a signal input end of the target oscillator or a signal at a signal output end of the target oscillator and a signal output by the auxiliary oscillator; The output end of the mixer is connected to the input end of the analog-to-digital converter; The output end of the analog-to-digital converter is connected to the input end of the peak detection module; the output end of the peak detection module is connected to the input end of the intermediate control module; the output end of the intermediate control module is connected to the input end of the peak average calculation module; When the output signal of the analog-to-digital converter is greater than the peak-to-average voltage, the peak detection module outputs a corresponding signal to the intermediate control module; and the peak-to-average calculation module calculates the peak-to-average voltage.

3. The oscillator circuit according to claim 2, characterized in that The peak detection module includes a first PMOS tube, a second PMOS tube, a first NMOS tube, a second NMOS tube and a third NMOS tube; The source of the first PMOS tube and the source of the second PMOS tube are connected to the power supply voltage; the gate of the first PMOS tube and the gate of the second PMOS tube are connected, and the gate of the first PMOS tube and the gate of the second PMOS tube are both connected to the drain of the first PMOS tube through a node; The drain of the first PMOS tube is connected to the drain of the first NMOS tube; the drain of the second PMOS tube is connected to the drain of the second NMOS tube; the source of the first NMOS tube and the source of the second NMOS tube are both connected to the drain of the third NMOS tube, the source of the third NMOS tube is grounded, and the gate of the third NMOS tube is connected to the reference voltage; The gate of the first NMOS tube is connected to the output end of the analog-to-digital converter; the gate of the second NMOS tube is connected to the peak average voltage.

4. The oscillator circuit according to claim 3, characterized in that The intermediate control module includes a third PMOS tube, a fourth PMOS tube, a fourth NMOS tube, a fifth NMOS tube, a sixth NMOS tube and a seventh NMOS tube; The gate of the third PMOS tube is connected to the peak average voltage; the source of the third PMOS tube is connected to the node; the gate of the fourth PMOS tube and the drain of the fourth NMOS tube are both connected to the drain of the third PMOS tube; the gate of the fourth NMOS tube is connected to the reference voltage, and the source of the fourth NMOS tube is grounded; The source of the fourth PMOS tube and the drain of the fifth NMOS tube are both power input terminals; the drain of the fourth PMOS tube is connected to the source of the fifth NMOS tube; the gate of the fifth NMOS tube is connected to the drain of the second PMOS tube; The source of the fifth NMOS tube is also connected to the drain of the sixth NMOS tube; the gate of the sixth NMOS tube is connected to the gate of the first NMOS tube; The source of the sixth NMOS tube is connected to the drain of the seventh NMOS tube; the gate of the seventh NMOS tube is connected to the reference voltage; and the source of the seventh NMOS tube is grounded.

5. The oscillator circuit according to claim 4, characterized in that The peak average calculation module includes a diode, a first capacitor, an eighth NMOS tube and a heating resistor wire; The first end of the diode is connected to the source of the fifth NMOS transistor; the first end of the first capacitor and the gate of the eighth NMOS transistor are both connected to the second end of the diode; the second end of the first capacitor is grounded; The source of the eighth NMOS tube is connected to the first end of the heating resistance wire; the second end of the heating resistance wire is grounded.

6. The oscillator circuit according to claim 5, characterized in that The negative resistance absorption circuit includes a starting module, a temperature sensing module and a negative resistance absorption module; the starting module, the temperature sensing module and the negative resistance absorption module are connected in pairs; the heating resistance wire transfers heat to the temperature sensing module by heat transfer.

7. The oscillator circuit according to claim 6, characterized in that The startup module includes a fifth PMOS tube, a sixth PMOS tube and a first resistor; The source of the fifth PMOS tube is connected to the corresponding power supply voltage; the first end of the first resistor and the gate of the sixth PMOS tube are both connected to the drain of the fifth PMOS tube; the drain of the sixth PMOS tube is grounded; The gate of the fifth PMOS tube and the drain of the sixth PMOS tube are both connected to the temperature sensing module; The gate electrode of the fifth PMOS tube and the source electrode of the sixth PMOS tube are also connected to the negative resistance absorption module.

8. The oscillator circuit according to claim 7, characterized in that The temperature sensing module includes a first triode, a second triode, a third triode and a second resistor; The collector of the first transistor is connected to a corresponding power supply voltage, and the base of the first transistor is connected to the collector of the second transistor; The base of the second transistor and the base of the third transistor are both connected to the emitter of the first transistor; the emitter of the third transistor is connected to the first end of the second resistor; the second end of the second resistor and the emitter of the second transistor are both grounded; The collector of the third transistor is connected to the base of the fifth PMOS transistor; The collector of the third transistor is also connected to the source of the sixth PMOS transistor.

9. The oscillator circuit according to claim 8, characterized in that The negative resistance absorption module includes a seventh PMOS tube, an eighth PMOS tube, a ninth PMOS tube, a third resistor, a fourth resistor and a fourth triode; The gate of the seventh PMOS tube, the gate of the eighth PMOS tube and the gate of the ninth PMOS tube are all connected to the gate of the fifth PMOS tube; The source of the seventh PMOS tube, the source of the eighth PMOS tube and the source of the ninth PMOS tube are all connected to the corresponding power supply voltage; The collector of the second transistor is connected to the drain of the seventh PMOS transistor; The collector of the third transistor and the source of the sixth PMOS transistor are both connected to the drain of the eighth PMOS transistor; The drain of the ninth PMOS tube is connected to the first end of the third resistor; the base of the fourth transistor and the first end of the fourth resistor are both connected to the second end of the third resistor; the second end of the fourth resistor R4 and the emitter of the fourth transistor are both grounded; The collector of the fourth transistor is connected to the signal input end of the target oscillator or the signal output end of the target oscillator.

10. The oscillator circuit according to claim 1, characterized in that The target oscillator includes a current source, a ninth NMOS tube, a fifth resistor, a crystal oscillator element, a second capacitor and a third capacitor; The first end of the current source is connected to the corresponding current, and the drain of the ninth NMOS tube and the first end of the fifth resistor are both connected to the second end of the current source; The second end of the fifth resistor, the gate of the ninth NMOS tube, the first end of the crystal oscillator element and the first end of the second capacitor are all connected to the signal input end of the target oscillator; the source of the ninth NMOS tube is grounded; the second end of the second capacitor is grounded; The second end of the crystal oscillator element and the first end of the third capacitor are both connected to the drain of the ninth NMOS tube; the second end of the third capacitor is grounded; The peak detection control circuit and the negative resistance absorption circuit are both connected to the signal input end of the target oscillator or the signal output end of the target oscillator.

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