Preparation method of photoelectric device, photoelectric device and display device

Abstract

The invention discloses a preparation method of a photoelectric device, the photoelectric device and a display device. According to the preparation method of the photoelectric device, when the electron transport layer is prepared, the photo-induced acid generator is added, then the acid is generated through illumination, and the generated acid and the inorganic semiconductor particles are subjected to ligand exchange, so that the inorganic semiconductor particles with polarity are obtained; when the functional layer is prepared from the non-polar functional layer material dispersion liquid on the electron transport layer, the electron transport layer cannot be dissolved by the non-polar solvent, so that the solubility resistance of the electron transport layer is improved, namely the solution scouring resistance of the electron transport layer is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a method for preparing an optoelectronic device, an optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLED has become the mainstream technology in the field of display technology due to its excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor to OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] However, the luminous efficiency of existing optoelectronic devices is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low luminous efficiency of existing photoelectric devices.

[0006] The embodiment of the present application is implemented as follows: a method for preparing a photoelectric device comprises the following steps: Providing an optoelectronic device preform, an electron transport material dispersion, and a functional layer material dispersion, wherein the optoelectronic device preform comprises a first electrode, the electron transport material dispersion comprises a photoacid generator, inorganic semiconductor particles, and a solvent, the surface of the inorganic semiconductor particles is connected with a non-polar ligand, and the functional layer material dispersion comprises a functional layer material and a non-polar solvent; The electron transport material dispersion is disposed on the photoelectric device preform and subjected to light treatment to obtain an electron transport layer; Disposing the functional layer material dispersion on the electron transport layer to form a functional layer; A second electrode is arranged on the functional layer to obtain a photoelectric device.

[0007] Optionally, in some embodiments of the present application, the first electrode is a cathode, the second electrode is an anode, and the functional layer material is a material of a light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material is a material of an electron injection layer, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, the functional layer material includes an interface modification material, and the second electrode is provided on the functional layer includes: providing a stacked light-emitting layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material includes an interface modification material, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode.

[0008] Optionally, in some embodiments of the present application, the inorganic semiconductor particles include one or more of doped metal oxide particles and undoped metal oxide particles, the metal oxide in the undoped metal oxide particles and the metal oxide in the doped metal oxide particles respectively and independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3, and the doping material in the doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, Al, K, C60, MoS2, halogen atoms, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene.

[0009] Optionally, in some embodiments of the present application, the electron transport material dispersion includes a first electron transport material dispersion and a second electron transport material dispersion, the first electron transport material dispersion includes a first photoacid generator, a first inorganic semiconductor particle and a first solvent, the second electron transport material dispersion includes a second photoacid generator, a second inorganic semiconductor particle and a second solvent, and the electron transport material dispersion is disposed on the optoelectronic device preform and subjected to light treatment to obtain an electron transport layer, comprising: The first electron transport material dispersion is disposed on the photoelectric device preform, and subjected to a first light irradiation treatment to obtain a first sub-electron transport layer; and The second electron transport material dispersion is disposed on the first sub-electron transport layer, and a second light irradiation treatment is performed to obtain a second sub-electron transport layer.

[0010] Optionally, in some embodiments of the present application, the first inorganic semiconductor particles include one or more of first doped metal oxide particles and first undoped metal oxide particles, and the second inorganic semiconductor particles include one or more of second doped metal oxide particles and second undoped metal oxide particles, wherein the metal oxide in the first undoped metal oxide particles, the metal oxide in the second undoped metal oxide particles, the metal oxide in the first doped metal oxide particles, and the metal oxide in the second doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3.

[0011] Optionally, in some embodiments of the present application, the first electrode is a cathode, the second electrode is an anode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms, and the doping material in the second doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene; or The first electrode is an anode, the second electrode is a cathode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene, and the doping material in the second doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms.

[0012] Optionally, in some embodiments of the present application, the photoacid generator, the first photoacid generator, and the second photoacid generator each independently include a triazine photoacid generator, the triazine photoacid generator includes a triazine photoacid generator containing chlorine, and the triazine photoacid generator containing chlorine includes 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, 2-(3,4-dimethoxy)-4,6-bis(trichloromethyl)- 1,3,5-triazine, 2-[2-(4-methoxyphenyl-2-yl)vinyl]-4-,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine, 2,4-bis(trichloromethyl)-(4′-acetylbiphenylacetone oxime)-6-triazine, 2-(3,4-dimethoxyphenyl)-4,6-bis(trichloromethyl)-1,3, One or more of 5-triazine, 2-(2,4-dimethoxyphenylvinyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine, 2-(1,3-benzodioxolan-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine; and / or The average particle size of the inorganic semiconductor particles, the average particle size of the first inorganic semiconductor particles, and the average particle size of the second inorganic semiconductor particles are independently 10 to 15 nm; and / or The mass fraction of the doping substance in the doped metal oxide particles, the mass fraction of the doping substance in the first doped metal oxide particles, and the mass fraction of the doping substance in the second doped metal oxide particles are independently 1-20%; and / or The solvent, the first solvent, the second solvent, and the non-polar solvent independently include one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate; and / or The non-polar ligand, the first non-polar ligand, and the second non-polar ligand independently include one or more of R1-COO-, R2-NH-, and R3-O-, wherein R1, R2, and R3 are independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, cyano, and unsubstituted or substituted C1~C 30 Chain hydrocarbon group, C1~C 30The invention further comprises a chain hydrocarbonoxy group having 3 to 60 ring atoms, a cycloalkyl group having 3 to 60 ring atoms, a heterocycloalkyl group having 3 to 60 ring atoms, an aryl group having 5 to 60 ring atoms, a heteroaryl group having 5 to 60 ring atoms, an aryloxy group having 5 to 60 ring atoms, and a heteroaryloxy group having 5 to 60 ring atoms, wherein the heteroatom in the heteroaryl group or the heteroaryloxy group is N, S, O, P, or Si, and the number of heteroatoms is 1 to 20, and the substituent is selected from one or more of amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, and cyano.

[0013] Optionally, in some embodiments of the present application, the mass ratio of the photoacid generator to the inorganic semiconductor particles, the mass ratio of the first photoacid generator to the first inorganic semiconductor particles, and the mass ratio of the second photoacid generator to the second inorganic semiconductor particles are independently (0.01-0.03): 1; and / or The wavelengths of light used in the illumination treatment, the first illumination treatment, and the second illumination treatment are independently 355-405 nm; and / or The energy density of the light used in the illumination treatment, the first illumination treatment, and the second illumination treatment is independently 30-50 mW / cm 2 ; and / or The time for the illumination treatment, the first illumination treatment, and the second illumination treatment is independently 10 to 30 seconds.

[0014] Optionally, in some embodiments of the present application, annealing is included after the light treatment, the first light treatment includes a first annealing, and the second light treatment includes a second annealing, and the temperatures of the annealing, the first annealing, and the second annealing are independently 80~100°C; and / or the times of the annealing, the first annealing, and the second annealing are independently 15~30 min.

[0015] Optionally, in some embodiments of the present application, after the light treatment and before the annealing, the method further includes: immersing in a third solvent for a period of time T; or After the first light treatment and before the first annealing, the method further includes: immersing in a third solvent A for a period of time T1; or After the second light treatment and before the second annealing, the method further includes: immersing in a third solvent B for a period of time T2.

[0016] Optionally, in some embodiments of the present application, the third solvent, the third solvent A, and the third solvent B independently include one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate; and / or The time T, the time T1, and the time T2 are independently 30 to 40 seconds.

[0017] Optionally, in some embodiments of the present application, the first electrode is a cathode, the second electrode is an anode, and the photoelectric device preform further includes an electron injection layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, and the second electrode is provided on the functional layer comprises: providing a stacked hole transport layer and a second electrode on the functional layer; or The first electrode is a cathode, the second electrode is an anode, and the second electrode is provided on the functional layer comprises: providing a stacked hole transport layer, a hole injection layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, and the photoelectric device preform further comprises a hole transport layer located between the first electrode and the light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, and the photoelectric device preform further includes a hole transport layer and a hole injection layer located between the first electrode and the light-emitting layer.

[0018] Optionally, in some embodiments of the present application, the first electrode and the second electrode are independently selected from a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode, the material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, and the material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg and Ba; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, wherein the organic light-emitting material includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4''-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed fluorescent materials, The invention relates to a latent material, a polymer containing BN covalent bonding, a hybrid localized charge transfer excited state material, an exciplex luminescent material, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, and one or more thereof; the quantum dot luminescent material comprises one or more of a single structure quantum dot, a core-shell structure quantum dot, and a perovskite semiconductor material; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot comprise II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III -One or more of the Group II-VI compounds, the Group II-VI compounds comprising CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZ The IV-VI group compound includes one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe,The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2, the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs, + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of the organic-inorganic hybrid perovskite semiconductor has a general structural formula of BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3]2 + , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The material of the electron injection layer includes one or more of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride; and / or The interface modification material includes one or more of polyethyleneimine, polyethoxyethyleneimine, poly[9,9-di(3'-(N,N-dimethylamino)propyl)-2,7-fluorene]-2,7-(9,9-dioctylfluorene))], polyethylene glycol, conjugated polyelectrolyte, and polyethylene oxide; and / or The material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4 '-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-) Phenyl vinylene, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9 ,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0019] Correspondingly, an embodiment of the present application further provides a photoelectric device, which includes a stacked first electrode, an electron transport layer, a functional layer, and a second electrode, wherein the material of the electron transport layer includes inorganic semiconductor particles.

[0020] Optionally, in some embodiments of the present application, the first electrode is a cathode, the second electrode is an anode, and the functional layer material is a material of a light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material is a material of an electron injection layer, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, the functional layer material includes an interface modification material, and the second electrode is provided on the functional layer includes: providing a stacked light-emitting layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material includes an interface modification material, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode.

[0021] Optionally, in some embodiments of the present application, polar ligands are connected to the surface of the inorganic semiconductor particles, and the polar ligands include chloride ions; and / or The inorganic semiconductor particles include one or more of doped metal oxide particles and undoped metal oxide particles, the metal oxide in the undoped metal oxide particles and the metal oxide in the doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3, and the doping material in the doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, Al, K, C60, MoS2, halogen atoms, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene.

[0022] Optionally, in some embodiments of the present application, the electron transport layer includes a first sub-electron transport layer arranged on the first electrode and a second sub-electron transport layer arranged on the first sub-electron transport layer, the first sub-electron transport layer includes first inorganic semiconductor particles, the second sub-electron transport layer includes second inorganic semiconductor particles, the first inorganic semiconductor particles include one or more of first doped metal oxide particles and first undoped metal oxide particles, the second inorganic semiconductor particles include one or more of second doped metal oxide particles and second undoped metal oxide particles, the metal oxide in the first undoped metal oxide particles, the metal oxide in the second undoped metal oxide particles, the metal oxide in the first doped metal oxide particles, and the metal oxide in the second doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3.

[0023] Optionally, in some embodiments of the present application, the first electrode is a cathode, the second electrode is an anode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms, and the doping material in the second doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene; or The first electrode is an anode, the second electrode is a cathode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene, and the doping material in the second doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms.

[0024] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0025] The preparation method of the optoelectronic device of the present application adds a photoacid generator when preparing the electron transport layer, then generates acid by light, and causes the generated acid to undergo ligand exchange with inorganic semiconductor particles to obtain polar inorganic semiconductor particles, so that when a functional layer is prepared on the electron transport layer using a functional layer material dispersion liquid with a non-polar solvent as the solvent, the electron transport layer will not be dissolved by the non-polar solvent, thereby improving the solubility of the electron transport layer, that is, improving the resistance of the electron transport layer to solution erosion; in addition, through in-situ ligand exchange, the long-chain non-polar ligands on the surface of the inorganic semiconductor particles are replaced with short-chain polar ligands, which can reduce the potential barrier of the inorganic semiconductor particles, thereby improving the conductivity of the inorganic semiconductor particles, and the luminous efficiency of the device prepared by this method is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application; Figure 2 is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application; Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application; Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application; Figure 5 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application; Figure 6 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application; Figure 7 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application; Figure 8 It is a schematic diagram of the acid generation process of a photoacid generator and the ligand exchange process on the surface of an inorganic semiconductor particle, taking the photoacid generator 2,4-bis(trichloromethyl)-6-p-methoxyphenyl-S-triazine and the solvent toluene as examples provided in an embodiment of the present application.

[0028] Reference numerals: Optoelectronic device 100; first electrode 10; electron transport layer 20; first sub-electron transport layer 21; second sub-electron transport layer 22; functional layer 30; second electrode 40; light-emitting layer 50, electron injection layer 60, hole transport layer 70; hole injection layer 80. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0030] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0031] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0032] In this application, "at least one" means one or more, and "plurality" means two or more. "One or more", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0033] In this application, C n Contains n carbon atoms, for example, C 30 It means it contains 30 carbon atoms, C1~C 30 It refers to a group containing 1 to 30 carbon atoms.

[0034] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0035] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0036] In existing optoelectronic devices, especially quantum dot optoelectronic devices, the electron transport layer generally uses inorganic semiconductor particles, and the cathode generally uses a metal single substance electrode with a low work function. Since such materials are sensitive to water and oxygen and are prone to chemical reactions, the life of the upright optoelectronic devices using such materials will be reduced, and the stability will be poor, which is not conducive to commercial applications. In order to improve the stability of optoelectronic devices, the prior art will use an inverted structure optoelectronic device. However, in the inverted optoelectronic device structure, when preparing other functional layers on the electron transport layer, the inorganic semiconductor particle material of the electron transport layer is easily washed away by the organic solvent used in the materials used to prepare other functional layers, resulting in a reduction in the function of the electron transport layer or even failure, and also causing the film layer to become rougher and affect the film forming properties of the next functional layer. In addition, the inverted optoelectronic device usually uses the anode of the upright optoelectronic device as the cathode. Since the work function of the material of this anode is usually high, when it is used as a cathode, there will be a large electron injection barrier, resulting in low electron injection efficiency, thus electron-hole imbalance, and then causing poor performance of the optoelectronic device.

[0037] The technical solution of this application is as follows: First, see Figures 1 to 4 , the present application embodiment provides a method for preparing an optoelectronic device 100, comprising the following steps: Step S11: providing a photoelectric device preform, an electron transport material dispersion, and a functional layer material dispersion, wherein the photoelectric device preform comprises a first electrode 10, the electron transport material dispersion comprises a photoacid generator, inorganic semiconductor particles, and a solvent, the surface of the inorganic semiconductor particles is connected with a non-polar ligand, and the functional layer material dispersion comprises a functional layer material and a non-polar solvent; Step S12: placing the electron transport material dispersion on the optoelectronic device preform to obtain a wet film, subjecting the wet film to light treatment so that the photoacid generator generates acid under the action of light, and subjecting the acid to in-situ ligand exchange with the non-polar ligand on the surface of the inorganic semiconductor particles to obtain inorganic semiconductor particles with polar ligands connected to the surface (i.e., polar inorganic semiconductor particles), and annealing to obtain an electron transport layer 20; Step S13: placing the functional layer material dispersion on the electron transport layer 20 to form a functional layer 30; Step S14 : disposing a second electrode 40 on the functional layer 30 to obtain a photoelectric device 100 .

[0038] In some embodiments, see Figure 2 , the first electrode 10 is a cathode, the second electrode 40 is an anode, the functional layer material includes a material of a light-emitting layer, and correspondingly, the functional layer 30 is a light-emitting layer. At this time, in the step S12, the electron transport material dispersion is disposed on the first electrode 10 of the optoelectronic device preform.

[0039] In other embodiments, see Figure 3 , the first electrode 10 is an anode, the second electrode 40 is a cathode, the functional layer material includes the material of the electron injection layer, and correspondingly, the functional layer 30 is an electron injection layer. At this time, the optoelectronic device preform also includes a light-emitting layer 50 arranged on the first electrode 10. In the step S12, the electron transport material dispersion is arranged on the light-emitting layer 50.

[0040] In some other embodiments, the functional layer material may also be an interface modification material, and correspondingly, the functional layer 30 is an interface modification layer. It can be understood that in this case, the first electrode 10 may be a cathode or an anode. Figure 4 When the first electrode 10 is a cathode and the second electrode 40 is an anode, the step S14 includes: arranging a stacked light-emitting layer 50 and a second electrode 40 on the functional layer 30 to obtain a photoelectric device 100. Figure 3 When the first electrode 10 is an anode and the second electrode 40 is a cathode, the optoelectronic device preform further includes a light-emitting layer 50 disposed on the first electrode 10 , and the electron transport material dispersion is disposed on the light-emitting layer 50 .

[0041] The method for preparing the optoelectronic device described in the present application is to add a photoacid generator when preparing the electron transport layer, then generate acid by illumination, and cause the generated acid to undergo ligand exchange with inorganic semiconductor particles to obtain polar inorganic semiconductor particles, so that when the functional layer is prepared on the electron transport layer using a functional layer material dispersion liquid with a non-polar solvent, the electron transport layer will not be dissolved by the non-polar solvent, thereby improving the anti-solution property of the electron transport layer, that is, improving the anti-solution scouring performance of the electron transport layer. In addition, by in-situ ligand exchange, the long-chain non-polar ligands on the surface of the inorganic semiconductor particles are replaced with short-chain polar ligands, which can effectively reduce the potential barrier of the inorganic semiconductor particles, thereby improving the conductivity of the inorganic semiconductor particles.

[0042] In the step S12: The photoacid generator includes but is not limited to triazine photoacid generators. The triazine photoacid generators have high photoinitiator activity, good thermal stability, good solubility, and good light controllability.

[0043] In some embodiments, the triazine photoacid generator includes a triazine photoacid generator containing chlorine, and the triazine photoacid generator containing chlorine includes but is not limited to 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine (CAS: 42573-57-9), 2-(3,4-dimethoxy)-4,6-bis(trichloromethyl)- 1,3,5-Triazine (CAS: 42880-07-9), 2-[2-(4-methoxyphenyl-2-yl)vinyl]-4-,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine (CAS: 3584-23-4), 2,4-bis(trichloromethyl)-(4′-acetylbiphenylacetone oxime)-6-triazine, 2-(3,4-dimethoxyphenylvinyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(2,4-dimethoxyphenylvinyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 1,3,5-Triazine, One or more of 2-phenyl-4,6-bis(trichloromethyl)-(2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine, CAS: 24504-22-1), 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine, and 2-(1,3-benzodioxolan-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine.

[0044] The inorganic semiconductor particles include one or more of doped metal oxide particles and undoped metal oxide particles, the metal oxide in the undoped metal oxide particles and the metal oxide in the doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3, and the doping material in the doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, Al, K, C60, MoS2, halogen atoms, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene.

[0045] As an example, the doped metal oxide particles can be indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), tin-doped zinc oxide (ZTO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO) and aluminum-doped magnesium oxide (AMO), etc.

[0046] In some embodiments, the mass fraction of the doping substance in the doped metal oxide particles is 1-20%, for example, 1-10%, 5-15%, 8-18%, 10-20%, etc. Within the doping amount range, the stability and electron transport performance of the electron transport layer 30 can be effectively improved.

[0047] In some embodiments, the average particle size of the inorganic semiconductor particles is 10-15 nm.

[0048] The solvent includes, but is not limited to, one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline ethylene dichloride, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate.

[0049] The non-polar ligand includes but is not limited to one or more of R1-COO-, R2-NH-, and R3-O-, wherein R1, R2, and R3 are independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, cyano, and unsubstituted or substituted C1~C 30 Chain hydrocarbon group, C1~C 30The invention further comprises a chain hydrocarbonoxy group having 3 to 60 ring atoms, a cycloalkyl group having 3 to 60 ring atoms, a heterocycloalkyl group having 3 to 60 ring atoms, an aryl group having 5 to 60 ring atoms, a heteroaryl group having 5 to 60 ring atoms, an aryloxy group having 5 to 60 ring atoms, and a heteroaryloxy group having 5 to 60 ring atoms, wherein the heteroatom in the heteroaryl group or the heteroaryloxy group is N, S, O, P, or Si, and the number of heteroatoms is 1 to 20, and the substituent is selected from one or more of amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, and cyano.

[0050] It should be noted that the R1-COO- described in the present application refers to an organic acid type ligand with an O-connection site, the R2-NH- described in the present application refers to an amino type ligand with an N-connection site, and the R3-O- described in the present application refers to a hydroxyl type ligand with an O-connection site.

[0051] In some embodiments, R1, R2 and R3 are independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, cyano; unsubstituted or substituted C1~C 30 Chain hydrocarbon group, C1~C 30 The invention further comprises a chain hydrocarbonoxy group having 3 to 30 ring atoms, a cycloalkyl group having 3 to 30 ring atoms, a heterocycloalkyl group having 3 to 30 ring atoms, an aryl group having 5 to 30 ring atoms, a heteroaryl group having 5 to 30 ring atoms, an aryloxy group having 5 to 30 ring atoms, and a heteroaryloxy group having 5 to 30 ring atoms, wherein the heteroatom in the heteroaryl group or the heteroaryloxy group is N, S, O, P, or Si, and the number of heteroatoms is 1 to 10.

[0052] In some embodiments, R1, R2 and R3 are independently selected from C1 to C 30 Alkyl, C1~C 30 Olefins, C1~C 30 The invention also comprises an alkynyl group having 5 to 30 ring atoms, an aryl group having 5 to 30 ring atoms, or a combination of these groups.

[0053] In some embodiments, R1, R2 and R3 are independently selected from C1 to C 20 Alkyl, C1~C 20 Olefins, C1~C 20 The invention also comprises an alkynyl group having 5 to 30 ring atoms, an aryl group having 5 to 30 ring atoms, or a combination of these groups.

[0054] In some embodiments, R1, R2 and R3 are independently selected from unsubstituted C1 to C 10 Alkyl, C1~C 10 Olefins, C1~C 10 The invention also comprises an alkynyl group having 10 to 20 ring atoms, an aryl group having 10 to 20 ring atoms, or a combination of these groups.

[0055] In some other embodiments, R1, R2 and R3 are independently selected from but not limited to unsubstituted C1-C5 alkyl, C1-C5 alkene, C1-C5 alkynyl, aryl with 10 to 15 ring atoms, or a combination of these groups.

[0056] The polar ligands on the surface of the inorganic semiconductor particles in the electron transport layer 20 include, but are not limited to, chloride ions.

[0057] In some embodiments, the mass ratio of the photoacid generator to the inorganic semiconductor particles is (0.01-0.03):1, for example, (0.015-0.025):1, (0.02-0.03):1, etc. Within the ratio range, it is beneficial to form a strong, stable inorganic nanocrystal network with fewer defects, and the light treatment time can also be reduced.

[0058] In some embodiments, the wavelength of the light used in the light treatment is 355-405 nm, for example, 360-380 nm, 365-385 nm, 370-390 nm, 375-390 nm, etc. Within the wavelength range, the photoacid generator is conducive to generating free radicals.

[0059] In some embodiments, the energy density of the light used in the light treatment is 30-50 mW / cm 2 , for example, 35~45 mW / cm 2 , 38~48 mW / cm 2 , 40~50 mW / cm 2 In the energy density range, it is beneficial to generate an appropriate amount of free radicals, so that the prepared electron transport layer 20 can have high solubility resistance, high stability and good electron transport performance.

[0060] In some embodiments, the light treatment time is 10-30 s, for example, 12-22 s, 15-25 s, 18-28 s, 20-29 s, etc. Within the time range, it is beneficial to generate an appropriate amount of free radicals, so that the prepared electron transport layer 20 can have high solubility resistance, high stability and good electron transport performance.

[0061] It can be understood that when the light treatment satisfies the conditions that the wavelength of the light is 355-405 nm and the energy density of the light is 30-50 mW / cm 2 , 10~30 s, can be more conducive to the generation of an appropriate amount of free radicals, so that the prepared electron transport layer 20 can have higher solubility resistance, higher stability and better electron transport performance.

[0062] In some embodiments, the annealing temperature is 80-100° C., for example, 85-90° C., 85-95° C., etc.; the annealing time is 15-30 min, for example, 18-25 min, 20-26 min, 22-28 min, 24-29 min, etc. The temperature and / or time range is conducive to preparing an electron transport layer 20 with better performance.

[0063] In some embodiments, see Figures 5 to 7 , the electron transport layer 20 includes a first sub-electron transport layer 21 and a second sub-electron transport layer 22 stacked, the electron transport material dispersion in S11 includes a first electron transport material dispersion and a second electron transport material dispersion, the first electron transport material dispersion includes a first photoacid generator, a first inorganic semiconductor particle and a first solvent, the second electron transport material dispersion includes a second photoacid generator, a second inorganic semiconductor particle and a second solvent, and the step S12 includes: The first electron transport material dispersion is disposed on the photoelectric device preform to obtain a first wet film, the first wet film is subjected to a first light irradiation treatment to make the first photoacid generator generate a first acid under the action of light, and the first acid is subjected to an in-situ ligand exchange with the first non-polar ligand on the surface of the first inorganic semiconductor particle to obtain a first inorganic semiconductor particle with polarity, and a first annealing is performed to obtain a first sub-electron transport layer 21: and The second electron transport material dispersion is set on the first sub-electron transport layer 21 to obtain a second wet film, and the second wet film is subjected to a second light treatment to make the second photoacid generator generate a second acid under the action of light, and the second acid is subjected to an in-situ ligand exchange with the non-polar ligand on the surface of the second inorganic semiconductor particle to obtain a second inorganic semiconductor particle with polarity, and a second annealing is performed to obtain a second sub-electron transport layer 22.

[0064] The first inorganic semiconductor particles include one or more of first doped metal oxide particles and first non-doped metal oxide particles, and the second inorganic semiconductor particles include one or more of second doped metal oxide particles and second non-doped metal oxide particles.

[0065] The metal oxide in the first undoped metal oxide particles, the metal oxide in the second undoped metal oxide particles, the metal oxide in the first doped metal oxide particles, and the metal oxide in the second doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3.

[0066] See also Figure 5 Or 7, when the first electrode 10 is a cathode and the second electrode 40 is an anode, in at least one embodiment, the first inorganic semiconductor particles are first doped metal oxide particles, and the doping substances in the first doped metal oxide particles include but are not limited to one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms. The first inorganic semiconductor particles can effectively reduce the work function of the first sub-electron transport layer 21 and improve the injection efficiency of electrons from the first electrode 10 to the first sub-electron transport layer 21.

[0067] See also Figure 5 Or 7, when the first electrode 10 is a cathode and the second electrode 40 is an anode, in at least one embodiment, the second inorganic semiconductor particles are second doped metal oxide particles, and the doping substances in the second doped metal oxide particles include but are not limited to Al, K, C60, MoS2, graphene, and one or more of the highly conductive polymers described above. The second inorganic semiconductor particles have a high electron transport layer performance, which can make the second sub-electron transport layer 22 have a high electron transport performance.

[0068] In this way, when the first electrode 10 is a cathode and the second electrode 40 is an anode, the electron transport layer 20 prepared by the preparation method includes a first sub-electron transport layer 21 and a second sub-electron transport layer 22, wherein the first sub-electron transport layer 21 has a good work function matching with the first electrode 10, which can effectively improve the injection of electrons, and the second sub-electron transport layer 22 has a high electron transport performance, which can effectively improve the electron transport efficiency of the optoelectronic device, thereby improving the luminous efficiency and life of the optoelectronic device 100 and other performance.

[0069] See also Figure 6When the first electrode 10 is an anode and the second electrode 40 is a cathode, in at least one embodiment, the first inorganic semiconductor particles are first doped metal oxide particles, and the doping material in the first doped metal oxide particles includes but is not limited to Al, K, C60, MoS2, graphene, and one or more of the highly conductive polymers described above. The first inorganic semiconductor particles have a high electron transport layer performance, which can make the first sub-electron transport layer 21 have a high electron transport performance.

[0070] See also Figure 6 When the first electrode 10 is an anode and the second electrode 40 is a cathode, in at least one embodiment, the second inorganic semiconductor particles are second doped metal oxide particles, and the doping substances in the second doped metal oxide particles include but are not limited to one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms. The second inorganic semiconductor particles can effectively reduce the work function of the second sub-electron transport layer 22 and improve the injection efficiency of electrons from the second electrode 40 to the second sub-electron transport layer 22.

[0071] In this way, when the first electrode 10 is an anode and the second electrode 40 is a cathode, the electron transport layer 20 prepared by the preparation method includes a first sub-electron transport layer 21 and a second sub-electron transport layer 22, wherein the second sub-electron transport layer 22 has a good work function matching with the second electrode 40, which can effectively improve the injection of electrons, and the first sub-electron transport layer 21 has a high electron transport performance, which can effectively improve the electron transport efficiency of the optoelectronic device, thereby improving the luminous efficiency and life of the optoelectronic device 100 and other performance.

[0072] The first photoacid generator and the second photoacid generator are independently selected from but not limited to the photoacid generators described above, the first solvent and the second solvent are independently selected from but not limited to the solvents described above, the first non-polar ligand and the second non-polar ligand are independently selected from but not limited to the non-polar ligands described above, the wavelength, energy density and illumination time of the light of the first light treatment and the second light treatment are independently but not limited to the wavelength, energy density and illumination time of the light described above, the temperature and time of the first annealing and the second annealing are independently but not limited to the temperature and time described above, which will not be repeated here.

[0073] The mass fraction of the doping substance in the first doped metal oxide particles and the mass fraction of the doping substance in the second doped metal oxide particles are independently 1-20%, for example, 1-10%, 5-15%, 8-18%, 10-20%, etc. Within the range of the doping amount, the stability and electron transport performance of the electron transport layer 30 can be effectively improved.

[0074] In some embodiments, after the wet film is subjected to light treatment and before the annealing, the process further includes: immersing the wet film after light treatment in a third solvent for a period of time T. In this way, impurities in the wet film can be removed. It can be understood that the impurities described in the present application refer to substances that are not connected to the surface of inorganic semiconductor particles, for example, photoacid generators and solvents that do not participate in the reaction, and free radicals that are generated after the reaction of photoacid generators and solvents and are not connected to the surface of inorganic semiconductor ions.

[0075] In some embodiments, after performing the first light treatment on the first wet film and before the first annealing, the method further includes: immersing the wet film after the light treatment in a third solvent A for a period of time T1.

[0076] In some embodiments, after performing the second light treatment on the second wet film and before the second annealing, the method further includes: immersing the wet film after the light treatment in a third solvent B for a period of time T2.

[0077] The third solvent, the third solvent A, and the third solvent B may independently include, but are not limited to, one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate.

[0078] In some embodiments, the time T, the time T1, and the time T2 are independently in the range of 30 to 40 s, for example, 32 to 36 s, 34 to 38 s, 25 to 39 s, etc. Within the time range, impurities in the wet film can be fully and effectively removed.

[0079] Figure 8 The present application provides a schematic diagram of the acid generation process of a photoacid generator using a photoacid generator 2,4-bis(trichloromethyl)-6-p-methoxyphenyl-S-triazine and a solvent toluene as an example and the ligand exchange process on the surface of an inorganic semiconductor particle. Figure 8 It is known that the photoacid generator, the solvent and the inorganic semiconductor particles react to generate inorganic semiconductor particles having the polar ligand Cl.

[0080] In step S13: The light-emitting material may include, but is not limited to, one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0081] The organic light-emitting material may include, but is not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy) (4,4',4''-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0082] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0083] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0084] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0085] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of the organic-inorganic hybrid perovskite semiconductor has a general structural formula of BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3]2 + , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0086] The material of the electron injection layer may be a material known in the art for electron injection layers of optoelectronic devices, for example, may be selected from but not limited to one or more of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

[0087] The interface modification material can be selected from but not limited to one or more of PEI (polyethyleneimine), PEIE (polyethoxyethyleneimine), PFN (poly [9,9-bis (3'- (N,N-dimethylamino) propyl) -2,7-fluorene] -2,7- (9,9-dioctylfluorene))]), PEG (polyethylene glycol), CPE (conjugated polyelectrolyte), and PEO (polyethylene oxide).

[0088] The non-polar solvent may include, but is not limited to, one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate.

[0089] In some embodiments, see Figure 2 Or 4, when the first electrode 10 is a cathode, the optoelectronic device preform may further include an electron injection layer 60, and in this case, the electron transport material dispersion is disposed on the electron injection layer 60 of the optoelectronic device preform.

[0090] In some embodiments, see Figure 2 Or 4, when the first electrode 10 is a cathode, the step S14 includes: arranging a hole transport layer 70 and a second electrode 40 stacked in sequence on the functional layer 30 to obtain a photoelectric device 100.

[0091] In some embodiments, see Figure 2 Or 4, when the first electrode 10 is a cathode, the step S14 includes: disposing a hole transport layer 70, a hole injection layer 80 and a second electrode 40 stacked in sequence on the functional layer 30 to obtain a photoelectric device 100.

[0092] In some embodiments, see Figure 3 When the first electrode 10 is an anode, the optoelectronic device preform further includes a hole transport layer 70 located between the first electrode 10 and the light-emitting layer 50 .

[0093] In some embodiments, see Figure 3 When the first electrode 10 is an anode, the photoelectric device preform further includes a hole transport layer 70 and a hole injection layer 80 located between the first electrode 10 and the light-emitting layer 50 .

[0094] In the above-mentioned preparation method, the method of setting the electron transport material dispersion on the optoelectronic device preform and the method of setting the functional layer material dispersion on the electron transport layer 20 are solution methods, and the solution method can be spin coating, printing, inkjet printing, doctor blading, printing, dip pulling, immersion, spraying, roll coating, casting, slit coating and strip coating, etc.

[0095] In the above preparation method, the method for forming the hole transport layer 70, the hole injection layer 80, and the second electrode 40 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method, and coprecipitation method. The physical method includes physical coating method and solution method, among which the physical coating method includes: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.

[0096] It is understood that when the optoelectronic device 100 further includes a functional layer conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, the method for preparing the optoelectronic device 100 may further include a step of preparing the above functional layer using conventional techniques in the art.

[0097] The first electrode 10 and the second electrode 40 are electrodes for optoelectronic devices known in the art, for example, they can independently include but are not limited to doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single substance electrodes or alloy electrodes. The material of the doped metal oxide particle electrode can include but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO), magnesium doped zinc oxide (MZO) and aluminum doped magnesium oxide (AMO). The composite electrode is a composite electrode in which metal is sandwiched between doped or undoped transparent metal oxide particles, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., wherein " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence. The material of the metal single substance electrode may include but is not limited to one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg and Ba.

[0098] The material of the hole transport layer 70 may also be a material known in the art for a hole transport layer of an optoelectronic device, for example, it may be selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4 '-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(4-butylphenyl-diphenylamine) (poly-TPD), poly Aniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, poly(N-vinyl carbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9 ,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB), spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO. One or more.

[0099] The material of the hole injection layer 80 can be a material known in the art for the hole injection layer of an optoelectronic device, for example, it can be selected from but not limited to one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0100] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0101] In some embodiments, the optoelectronic device 100 may be a quantum dot light emitting diode, an organic light emitting diode, a thin film transistor, etc.

[0102] Second, see Figure 1 The present application also relates to a photoelectric device 100 prepared by the above-mentioned method for preparing a photoelectric device. The photoelectric device 100 comprises a stacked first electrode 10, an electron transport layer 20, a functional layer 30 and a second electrode 40, wherein the material of the electron transport layer 20 comprises inorganic semiconductor particles.

[0103] In some embodiments, see Figure 2 The first electrode 10 is a cathode, the second electrode 40 is an anode, and the functional layer material is a material of a light-emitting layer.

[0104] In other embodiments, see Figure 3 The first electrode 10 is an anode, the second electrode 40 is a cathode, the functional layer material is a material of an electron injection layer, and the optoelectronic device preform further includes a light-emitting layer 50 disposed on the first electrode 10 .

[0105] In some other embodiments, see Figure 4 The first electrode 10 is a cathode, the second electrode 40 is an anode, the functional layer material includes an interface modification material, and the second electrode 40 is provided on the functional layer 30 includes: providing a stacked light-emitting layer 50 and a second electrode 40 on the functional layer 30.

[0106] In some other embodiments, see Figure 3The first electrode 10 is an anode, the second electrode 40 is a cathode, the functional layer material includes an interface modification material, and the optoelectronic device preform also includes a light-emitting layer 50 disposed on the first electrode 10 .

[0107] Polar ligands are connected to the surfaces of the inorganic semiconductor particles in the electron transport layer 20 , and the polar ligands include but are not limited to chloride ions.

[0108] In some embodiments, the electron transport layer 20 includes a first sub-electron transport layer 21 disposed on the first electrode 10 and a second sub-electron transport layer 22 disposed on the first sub-electron transport layer 21. The first sub-electron transport layer 21 includes first inorganic semiconductor particles, and the second sub-electron transport layer 22 includes second inorganic semiconductor particles.

[0109] The inorganic semiconductor particles, the first inorganic semiconductor particles, and the second inorganic semiconductor particles are as described above and will not be described in detail here.

[0110] In a third aspect, the present application further relates to a display device, wherein the display device comprises the optoelectronic device 100 .

[0111] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0112] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0113] Example 1 Depositing ITO on a glass substrate to obtain an ITO cathode with a thickness of 100 nm; 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, ZnMgO and toluene were mixed, wherein the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnMgO was 0.02:1, and a dispersion with a concentration of 30 mg / ml was obtained. The dispersion was spin-coated on the cathode to obtain a wet film with a thickness of 20 nm. The wavelength was 355 nm and the energy density was 40 mW / cm 2 The wet film is irradiated with UV light for 5 s, and then the exposed wet film is immersed in a toluene solution for 30 s, followed by annealing at 100° C. for 10 min to obtain a first sub-electron transport layer 21; 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, ZnAlO and toluene were mixed, wherein the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnAlO was 0.02:1, and a dispersion with a concentration of 30 mg / ml was obtained. The dispersion was spin-coated on the cathode to obtain a wet film with a thickness of 20 nm. The wavelength was 355 nm and the energy density was 40 mW / cm 2 The wet film is irradiated with UV light for 5 seconds, and then the exposed wet film is immersed in a toluene solution for 30 seconds, followed by annealing at 100° C. for 10 minutes to obtain a second sub-electron transport layer 22; Depositing a cadmium selenide blue light-emitting layer quantum dot solution on the second electron transport layer 22, wherein the solvent is dimethyl sulfoxide, annealing at 80° C. for 10 min, to obtain a light-emitting layer with a thickness of 30 nm; Spin-coating PVK material on the light-emitting layer, annealing at 150° C. for 30 min, to obtain a hole transport layer 70 with a thickness of 20 nm; Spin-coat the PEDOT:PSS material on the hole transport layer 70 and anneal at 150° C. for 30 min to obtain a hole injection layer 80 with a thickness of 50 nm; Ag is evaporated on the hole injection layer 80 to obtain a cathode with a thickness of 100 nm; After packaging, the optoelectronic device 100 is obtained.

[0114] Example 2 This embodiment is substantially the same as Embodiment 1, except that this embodiment uses 2-(3,4-dimethoxy)-4,6-bis(trichloromethyl)-1,3,5-triazine to replace 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine in Embodiment 1.

[0115] Embodiment 3 (upright stacked device) The photoelectric device of this embodiment is a positive photoelectric device. The preparation method is as follows: ITO was deposited on a glass substrate to obtain an ITO anode with a thickness of 100 nm; Spin-coat PEDOT:PSS material on the ITO anode and anneal at 150°C for 30 min to obtain a hole injection layer 80 with a thickness of 50 nm; The hole injection layer 80 is spin-coated with PVK material, and annealed at 150° C. for 30 min to obtain a hole transport layer 70 with a thickness of 20 nm; A layer of cadmium selenide blue light-emitting layer quantum dot solution is deposited on the hole transport layer 70, and annealed at 80°C for 10 min to obtain a light-emitting layer with a thickness of 30 nm; 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, ZnAlO and toluene were mixed, wherein the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnAlO was 0.02:1, and a dispersion with a concentration of 30 mg / ml was obtained. The dispersion was spin-coated on the light-emitting layer to obtain a wet film with a thickness of 20 nm. The wavelength was 355 nm and the energy density was 40 mW / cm 2 The wet film is irradiated with UV light for 5 seconds, and then the exposed wet film is immersed in a toluene solution for 30 seconds, followed by annealing at 100° C. for 10 minutes to obtain a first sub-electron transport layer 21; 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, ZnMgO and toluene were mixed, wherein the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnMgO was 0.02:1, and a dispersion with a concentration of 30 mg / ml was obtained. The dispersion was spin-coated on the first sub-electron transport layer 21 to obtain a wet film with a thickness of 20 nm. The wavelength was 355 nm and the energy density was 40 mW / cm 2 The wet film is irradiated with UV light for 5 s, and then the exposed wet film is immersed in a toluene solution for 30 s, followed by annealing at 100° C. for 10 min to obtain a second sub-electron transport layer 22; Spin coating a dimethyl sulfoxide solution of cesium fluoride on the second electron transport layer 22 to obtain an electron injection layer with a thickness of 20 nm; Vapor depositing Ag on the electron injection layer to obtain a cathode with a thickness of 100 nm; After packaging, the optoelectronic device 100 is obtained.

[0116] Example 4 This embodiment is basically the same as Embodiment 1, except that ZnMgO in Embodiment 1 is replaced by ZnO in this embodiment.

[0117] Example 5 This embodiment is basically the same as Embodiment 1, except that TiO2 is used in this embodiment to replace ZnMgO in Embodiment 1.

[0118] Example 6 This embodiment is substantially the same as Embodiment 1, except that this embodiment does not include the preparation of the second electron transport sub-layer 22 .

[0119] Example 7 This embodiment is substantially the same as Embodiment 1, except that this embodiment does not include the preparation of the first electron transport sub-layer 21 .

[0120] Example 8 This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnMgO is 0.01:1.

[0121] Example 9 This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the mass ratio of 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine to ZnMgO is 0.03:1.

[0122] Example 10 This embodiment is basically the same as Embodiment 1, except that the wavelength of light in this embodiment is 365 nm.

[0123] Embodiment 11 This embodiment is basically the same as Embodiment 1, except that the wavelength of light in this embodiment is 405 nm.

[0124] Example 12 This embodiment is basically the same as the embodiment 1, except that the energy density of the light in this embodiment is 30 mw / cm 2 .

[0125] Embodiment 13 This embodiment is basically the same as the embodiment 1, except that the energy density of the light in this embodiment is 50 mw / cm 2 .

[0126] Comparative Example 1 This comparative example is substantially the same as Example 1, except that the material of the electron transport layer in this comparative example is ZnMgO.

[0127] The luminous efficiency EQE and lifespan T95 of the optoelectronic devices of Examples 1 to 13 and the comparative example were tested. The test results are shown in Table 1.

[0128] The test method of luminous efficiency EQE is as follows: using FPD optical property measurement equipment from Foster, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminous spectrum, and calculating the luminous efficiency EQE of the device; The T95 test method for lifespan is: in CDA gas, under constant current or voltage driving, measure the time taken for the device brightness to decay to a certain percentage of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifespan is the actual measured lifespan. Among them, the constant current is 2mA.

[0129] Table 1: EQE (%) T95 (h) Example 1 15.2 56 Example 2 15.1 51 Example 3 16.2 65 Example 4 12.2 40 Example 5 9.5 6 Example 6 10.0 21 Example 7 11.2 25 Example 8 15.0 55 Example 9 15.1 50 Example 10 15.6 53 Embodiment 11 15.3 50 Example 12 15.2 51 Embodiment 13 14.8 48 Comparative Example 1 8.5 2 From Table 1 we can see that: Compared with the optoelectronic device of comparative example 1, the optoelectronic devices of embodiments 1 to 13 have higher luminous efficiency and longer life. The reason may be that a photoacid generator is added to the electron transport layer prepared in the present application, so that the prepared electron transport layer has higher resistance to solvent erosion, thereby improving the stability of the electron transport layer and the electron transport performance.

[0130] Compared with the optoelectronic devices of Examples 6 and 7, the optoelectronic device of Example 1 has higher luminous efficiency and longer life. The reason may be that the electron transport layer of the optoelectronic device of Example 1 includes a first sub-electron transport layer and a second sub-electron transport layer. The first sub-electron transport layer has a lower work function and can effectively improve the electron injection efficiency, while the second sub-electron transport layer has better electron transport performance and can effectively improve the electron transport rate.

[0131] The above is a detailed introduction to the preparation method of the optoelectronic device, the optoelectronic device and the display device provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: The steps include: Providing an optoelectronic device preform, an electron transport material dispersion, and a functional layer material dispersion, wherein the optoelectronic device preform comprises a first electrode, the electron transport material dispersion comprises a photoacid generator, inorganic semiconductor particles, and a solvent, the surface of the inorganic semiconductor particles is connected with a non-polar ligand, and the functional layer material dispersion comprises a functional layer material and a non-polar solvent; The electron transport material dispersion is disposed on the photoelectric device preform and subjected to light treatment to obtain an electron transport layer; Disposing the functional layer material dispersion on the electron transport layer to form a functional layer; A second electrode is arranged on the functional layer to obtain a photoelectric device.

2. The preparation method according to claim 1, characterized in that The first electrode is a cathode, the second electrode is an anode, and the functional layer material is a material of a light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material is a material of an electron injection layer, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, the functional layer material includes an interface modification material, and the second electrode is provided on the functional layer includes: providing a stacked light-emitting layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material includes an interface modification material, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode.

3. The preparation method according to claim 1, characterized in that: The inorganic semiconductor particles include one or more of doped metal oxide particles and undoped metal oxide particles, the metal oxide in the undoped metal oxide particles and the metal oxide in the doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3, and the doping material in the doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, Al, K, C60, MoS2, halogen atoms, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene.

4. The preparation method according to claim 1, characterized in that: The electron transport material dispersion includes a first electron transport material dispersion and a second electron transport material dispersion, wherein the first electron transport material dispersion includes a first photoacid generator, a first inorganic semiconductor particle and a first solvent, and the second electron transport material dispersion includes a second photoacid generator, a second inorganic semiconductor particle and a second solvent, and the electron transport material dispersion is disposed on the photoelectric device preform and subjected to light treatment to obtain an electron transport layer, comprising: The first electron transport material dispersion is disposed on the photoelectric device preform, and subjected to a first light irradiation treatment to obtain a first sub-electron transport layer; and The second electron transport material dispersion is disposed on the first sub-electron transport layer, and a second light irradiation treatment is performed to obtain a second sub-electron transport layer.

5. The preparation method according to claim 4, characterized in that: The first inorganic semiconductor particles include one or more of first doped metal oxide particles and first undoped metal oxide particles, and the second inorganic semiconductor particles include one or more of second doped metal oxide particles and second undoped metal oxide particles, wherein the metal oxide in the first undoped metal oxide particles, the metal oxide in the second undoped metal oxide particles, the metal oxide in the first doped metal oxide particles, and the metal oxide in the second doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3.

6. The preparation method according to claim 5, characterized in that: The first electrode is a cathode, the second electrode is an anode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms, and the doping material in the second doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene; or The first electrode is an anode, the second electrode is a cathode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene, and the doping material in the second doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms.

7. The preparation method according to claim 4, characterized in that: The photoacid generator, the first photoacid generator, and the second photoacid generator each independently include a triazine photoacid generator, wherein the triazine photoacid generator includes a triazine photoacid generator containing chlorine, and the triazine photoacid generator containing chlorine includes 2,4-bis(trichloromethyl)-6-p-methoxyphenylvinyl-S-triazine, 2-(3,4-dimethoxy)-4,6-bis(trichloromethyl)- 1,3,5-triazine, 2-[2-(4-methoxyphenyl-2-yl)vinyl]-4-,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine, 2,4-bis(trichloromethyl)-(4′-acetylbiphenylacetone oxime)-6-triazine, 2-(3,4-dimethoxyphenyl)-4,6-bis(trichloromethyl)-1,3, One or more of 5-triazine, 2-(2,4-dimethoxyphenylvinyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-S-triazine, 2-(1,3-benzodioxolan-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine; and / or The average particle size of the inorganic semiconductor particles, the average particle size of the first inorganic semiconductor particles, and the average particle size of the second inorganic semiconductor particles are independently 10 to 15 nm; and / or The mass fraction of the doping substance in the doped metal oxide particles, the mass fraction of the doping substance in the first doped metal oxide particles, and the mass fraction of the doping substance in the second doped metal oxide particles are independently 1-20%; and / or The solvent, the first solvent, the second solvent, and the non-polar solvent independently include one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate; and / or The non-polar ligand, the first non-polar ligand, and the second non-polar ligand independently include one or more of R1-COO-, R2-NH-, and R3-O-, wherein R1, R2, and R3 are independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, cyano, and unsubstituted or substituted C1~C 30 Chain hydrocarbon group, C1~C 30 a chain hydrocarbonoxy group having 3 to 60 ring atoms, a cycloalkyl group having 3 to 60 ring atoms, a heterocycloalkyl group having 3 to 60 ring atoms, an aryl group having 5 to 60 ring atoms, a heteroaryl group having 5 to 60 ring atoms, an aryloxy group having 5 to 60 ring atoms, and a heteroaryloxy group having 5 to 60 ring atoms, wherein the heteroatom in the heteroaryl group or the heteroaryloxy group is N, S, O, P, Si, and the number of heteroatoms is 1 to 20, and the substituent is selected from one or more of amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, aldehyde, thiol, and cyano; and / or The mass ratio of the photoacid generator to the inorganic semiconductor particles, the mass ratio of the first photoacid generator to the first inorganic semiconductor particles, and the mass ratio of the second photoacid generator to the second inorganic semiconductor particles are independently (0.01-0.03): 1; and / or The wavelengths of light used in the illumination treatment, the first illumination treatment, and the second illumination treatment are independently 355-405 nm; and / or The energy density of the light used in the illumination treatment, the first illumination treatment, and the second illumination treatment is independently 30-50 mW / cm 2 ; and / or The duration of the illumination treatment, the first illumination treatment, and the second illumination treatment is independently 10 to 30 seconds.

8. The preparation method according to claim 4, characterized in that: The light treatment includes annealing, the first light treatment includes a first annealing, and the second light treatment includes a second annealing, the temperatures of the annealing, the first annealing, and the second annealing are independently 80~100°C, and / or the times of the annealing, the first annealing, and the second annealing are independently 15~30 minutes.

9. The preparation method according to claim 8, characterized in that: After the light treatment and before the annealing, the method further comprises: immersing the mixture in a third solvent for a period of time T; or After the first light treatment and before the first annealing, the method further includes: immersing in a third solvent A for a period of time T1; or After the second light treatment and before the second annealing, the method further includes: immersing in a third solvent B for a period of time T2.

10. The preparation method according to claim 9, characterized in that: The third solvent, the third solvent A, and the third solvent B independently include one or more of toluene, benzene, liquid paraffin, chloroform, ether, carbon tetrachloride, gasoline dichloroethane, fatty oil, liquid paraffin, ethyl acetate, and isopropyl myristate; and / or The time T, the time T1, and the time T2 are independently 30 to 40 seconds.

11. The preparation method according to claim 2, characterized in that: The first electrode is a cathode, the second electrode is an anode, and the photoelectric device preform further comprises an electron injection layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, and the second electrode is provided on the functional layer comprises: providing a stacked hole transport layer and a second electrode on the functional layer; or The first electrode is a cathode, the second electrode is an anode, and the second electrode is provided on the functional layer comprises: providing a stacked hole transport layer, a hole injection layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, and the photoelectric device preform further comprises a hole transport layer located between the first electrode and the light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, and the photoelectric device preform further includes a hole transport layer and a hole injection layer located between the first electrode and the light-emitting layer.

12. The preparation method according to claim 11, characterized in that: The first electrode and the second electrode are independently selected from a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode, the material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, and the material of the metal single substance electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg and Ba; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, wherein the organic light-emitting material includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4''-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed fluorescent materials, The invention relates to a latent material, a polymer containing BN covalent bonding, a hybrid localized charge transfer excited state material, an exciplex luminescent material, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, and one or more thereof; the quantum dot luminescent material comprises one or more of a single structure quantum dot, a core-shell structure quantum dot, and a perovskite semiconductor material; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot comprise II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III -One or more of the Group II-VI compounds, the Group II-VI compounds comprising CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZ The IV-VI group compound includes one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe,The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2, the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is a Cs+ ion, M is a divalent metal cation, including Pb, 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of the organic-inorganic hybrid perovskite semiconductor has a general structural formula of BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The material of the electron injection layer includes one or more of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride; and / or The interface modification material includes one or more of polyethyleneimine, polyethoxyethyleneimine, poly[9,9-di(3'-(N,N-dimethylamino)propyl)-2,7-fluorene]-2,7-(9,9-dioctylfluorene))], polyethylene glycol, conjugated polyelectrolyte, and polyethylene oxide; and / or The hole transport layer includes materials such as 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4 ,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly (p-)phenylene vinylene, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9 ,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

13. A photoelectric device, characterized in that: The optoelectronic device comprises a stacked first electrode, an electron transport layer, a functional layer and a second electrode, wherein the material of the electron transport layer comprises inorganic semiconductor particles.

14. The optoelectronic device according to claim 13, wherein: The first electrode is a cathode, the second electrode is an anode, and the functional layer material is a material of a light-emitting layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material is a material of an electron injection layer, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode; or The first electrode is a cathode, the second electrode is an anode, the functional layer material includes an interface modification material, and the second electrode is provided on the functional layer includes: providing a stacked light-emitting layer and a second electrode on the functional layer; or The first electrode is an anode, the second electrode is a cathode, the functional layer material includes an interface modification material, and the optoelectronic device preform further includes a light-emitting layer disposed on the first electrode.

15. The optoelectronic device according to claim 13, characterized in that Polar ligands are connected to the surface of the inorganic semiconductor particles, and the polar ligands include chloride ions; and / or The inorganic semiconductor particles include one or more of doped metal oxide particles and undoped metal oxide particles, the metal oxide in the undoped metal oxide particles and the metal oxide in the doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3, and the doping material in the doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, Al, K, C60, MoS2, halogen atoms, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene.

16. The optoelectronic device according to claim 13, characterized in that The electron transport layer includes a first sub-electron transport layer arranged on the first electrode and a second sub-electron transport layer arranged on the first sub-electron transport layer, the first sub-electron transport layer includes first inorganic semiconductor particles, the second sub-electron transport layer includes second inorganic semiconductor particles, the first inorganic semiconductor particles include one or more of first doped metal oxide particles and first undoped metal oxide particles, the second inorganic semiconductor particles include one or more of second doped metal oxide particles and second undoped metal oxide particles, and the metal oxide in the first undoped metal oxide particles, the metal oxide in the second undoped metal oxide particles, the metal oxide in the first doped metal oxide particles, and the metal oxide in the second doped metal oxide particles independently include one or more of ZnO, NiO, W2O3, Mo2O3, TiO2, SnO, ZrO2, Ta2O3, Ga2O3, SiO2, CaO, HfO2, SrTiO3, BaTiO3, and MgTiO3.

17. The optoelectronic device according to claim 16, wherein: The first electrode is a cathode, the second electrode is an anode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms, and the doping material in the second doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene; or The first electrode is an anode, the second electrode is a cathode, the first inorganic semiconductor particles are first doped metal oxide particles and / or the second inorganic semiconductor particles are second doped metal oxide particles, wherein the doping material in the first doped metal oxide particles includes one or more of Al, K, C60, MoS2, graphene, polyacetylene, poly(benzodifurandione), and cross-linked polystyrene, and the doping material in the second doped metal oxide particles includes one or more of Ga, Li, Mg, Cl, Mn, and halogen atoms.

18. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 13 to 17.

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