Ion implanter and use method thereof

Abstract

The invention discloses an ion implanter and a use method thereof, and relates to the technical field of semiconductor manufacturing, and the ion implanter comprises a wafer stage and a mechanical arm. An alignment table; an airlock table; a V-shaped arm; clamping points are arranged on the two sides of the target disc; groove-shaped structures are arranged on the left side and the right side of the target disc, alignment marks of wafers are arranged on the surface of the target disc, it is ensured that the wafers are tightly attached to the surface of the target disc during rotation through vacuum adsorption points, displacement caused by centrifugal force during rotation is avoided, and the groove-shaped structures on the two sides of the target disc provide a stable operation path for wafer conveying of the V-shaped arm. According to the ion implanter, the edge of the wafer is further fixed through the clamping points, the wafer is prevented from shaking in the wafer moving process, the alignment marks ensure that the wafer is accurately positioned, the problem that the position is deviated due to the fact that the wafer shakes when a 6-inch wafer is produced by an existing ion implanter is solved, and the production efficiency of the ion implanter is improved. The ion implanter can prevent the wafer from shaking when producing a 6-inch wafer, and avoids position displacement.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an ion implanter and a method of using the same. Background Art

[0002] With the continuous development of semiconductor manufacturing technology, ion implanters play a vital role in the wafer manufacturing process. Ion implantation technology can accurately control the concentration and distribution of dopants and is a key step in manufacturing high-performance semiconductor devices. Existing ion implantation equipment has certain limitations in the flexibility of supporting wafers of different sizes, especially the weak support capability for 6-inch wafers.

[0003] The mainstream ion implantation equipment on the current market, such as the Nissin ion implantation model 2300AH, mainly supports the process processing of 8-inch and 12-inch silicon wafers. These devices were optimized for large-size wafers at the beginning of their design and are widely used in large-scale, high-precision semiconductor manufacturing processes. However, due to design and process limitations, the Nissin ion implantation model 2300AH has not yet taken into account the processing requirements for 6-inch wafers. When manufacturing 6-inch wafers, the wafer is prone to shaking during rotation, causing the position to shift.

[0004] Therefore, we need an ion implanter and a method of using the same to solve the problem that the existing ion implanter causes the wafer to shake and shift in position when producing 6-inch wafers. The ion implanter can prevent the wafer from shaking and shifting in position when producing 6-inch wafers. Summary of the invention

[0005] The purpose of the present application is to solve the problem that when an existing ion implanter produces 6-inch wafers, the wafer shakes, causing the position to shift. In order to solve the above problem, the present application provides an ion implanter and a method of using the same, which can prevent the wafer from shaking and position shifting when producing 6-inch wafers.

[0006] To achieve the above-mentioned purpose, the embodiments of the present application adopt the following technical solutions: a wafer stage, which is located at the starting point of the conveying system; a robotic arm, which is movably connected to the wafer stage, and is used in conjunction with the wafer stage; an alignment stage, which is connected to one end of the robotic arm; an air lock stage, which is connected to the other end of the robotic arm; a V-shaped arm, which is connected to the air lock stage, and is used to transfer the wafer to the target plate; the target plate is connected to a rotation drive system, and a plurality of vacuum adsorption points are provided in the central area of ​​the target plate, which are used to fix the wafer, and an alignment mark with the wafer is provided on the surface of the target plate; a groove structure is provided on the left and right sides of the target plate, which is used to provide a path for the V-shaped arm, and clamping points are provided on both sides of the V-shaped arm, which are fixed to the edge of the wafer.

[0007] In the above technical scheme, the embodiment of the present application solves the problem of unstable wafer position when producing 6-inch wafers in the existing ion implanter by setting multiple vacuum adsorption points suitable for 6-inch wafers in the central area of ​​the target plate and clamping points and alignment marks on both sides. The ion implanter can prevent the wafer from shifting when producing 6-inch wafers.

[0008] Further, according to an embodiment of the present application, a cooling device is provided in the middle of the target plate.

[0009] Further, according to an embodiment of the present application, the target disk diameter is smaller than the wafer diameter.

[0010] Further, according to an embodiment of the present application, the groove structure is located on both sides of the target plate and matches the grasping structure of the V-shaped arm.

[0011] Further, according to an embodiment of the present application, the target plate is connected to the rotation drive system by a mechanical fixing method, and the mechanical fixing method includes a plurality of evenly distributed fixing points.

[0012] Further, according to an embodiment of the present application, the alignment marks are arranged in the center and edge areas of the target disk.

[0013] Furthermore, according to an embodiment of the present application, the vacuum adsorption points, clamping points, alignment marks and groove structures of the target plate are all made of antistatic materials.

[0014] Further, according to an embodiment of the present application, the rotation drive system is controlled by a high-precision servo motor.

[0015] Further, according to an embodiment of the present application, wafers are transferred between the target plate and the air lock table via a V-shaped arm.

[0016] To achieve the above-mentioned purpose, the embodiment of the present application also adopts the following technical solution: a wafer to be processed is placed on a wafer stage, and the conveying system automatically senses the presence of the wafer;

[0017] The wafer is transferred from the wafer stage to the alignment stage by a robotic arm;

[0018] Wafer alignment is performed on the alignment stage. After alignment is completed, the robotic arm transfers the wafer from the alignment stage to the air lock stage.

[0019] Perform gas pressure conversion on the air lock table to switch the atmospheric environment to a vacuum environment to meet the process requirements of ion implantation;

[0020] After the gas pressure conversion is completed, the V-shaped arm will transfer the wafer from the air lock table to the target plate;

[0021] The wafer is placed on the target plate and fixed in the center of the target plate through the vacuum adsorption point of the target plate to ensure that the wafer is stable and motionless during the entire ion implantation process;

[0022] The target disk starts to rotate to ensure that the ion beam evenly covers the wafer surface and achieves precise ion implantation;

[0023] After the implantation is completed, the V-shaped arm will take the wafer out of the target plate and put it back into the air lock, which will restore the air pressure and convert the vacuum environment back to the atmospheric environment.

[0024] The robotic arm will transfer the processed wafer from the air lock back to the wafer carrier, completing the entire ion implantation process;

[0025] After each wafer is implanted, the entire process repeats the above steps until all wafers are processed.

[0026] Compared with the prior art, the present application has the following beneficial effects: the vacuum adsorption points are used to ensure that the wafer is tightly attached to the surface of the target disk during rotation, thereby avoiding displacement caused by centrifugal force during rotation; the groove structures on both sides of the target disk provide a stable operating path for the V-arm wafer transfer, thereby ensuring a smooth and error-free transfer process; the clamping points further fix the wafer edge to prevent the wafer from shaking during wafer movement; the alignment marks ensure accurate wafer positioning, thereby solving the problem of wafer shaking and position displacement caused by the existing ion implantation machine when producing 6-inch wafers; the ion implantation machine can prevent the wafer from shaking and position displacement when producing 6-inch wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present application is further described below in conjunction with the accompanying drawings and embodiments.

[0028] Figure 1 It is an axonometric view of an ion implanter.

[0029] Figure 2 This is a front view of an ion implanter.

[0030] Figure 3 This is a top view of an ion implanter.

[0031] Figure 4 This is an axonometric view of the target plate.

[0032] Figure 5 This is a top view of the target plate.

[0033] Figure 6 is a top view of the clamping point.

[0034] Figure 7 yes Figure 6 "AA" section view of the.

[0035] Figure 8 yes Figure 6 "AA" section view of the improved clamping point.

[0036] In the attached figure

[0037] 1. Wafer stage 2. Robotic arm 3. Alignment stage

[0038] 4. Air lock platform 5. V-shaped arm 51. Clamping point

[0039] 511, clamping arm 512, clamping head 513, elastic adjustment mechanism

[0040] 6. Target plate 61, vacuum adsorption point 62, cooling device

[0041] 63. Groove structure 64. Alignment mark 7. Wafer DETAILED DESCRIPTION

[0042] In order to make the purpose and technical solution of the present invention clearly and completely described, and the advantages more clearly understood, the embodiments of the present invention are further described in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are part of the embodiments of the present invention, rather than all of the embodiments, and are only used to explain the embodiments of the present invention, and are not used to limit the embodiments of the present invention. All other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] In the description of the present invention, it should be noted that the terms "center", "middle", "upper", "lower", "left", "right", "inner", "outer", "top", "bottom", "side", "vertical", "horizontal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "one", "first", "second", "third", "fourth", "fifth", "sixth" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0044] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] For the purpose of simplicity and illustration, the principles of the embodiments are described primarily by reference to examples. In the following description, many specific details are presented to provide a thorough understanding of the embodiments. However, it is apparent that, for those of ordinary skill in the art, these embodiments may not be limited to these specific details in practice. In some instances, known methods and apparatus are not described in detail to avoid making these embodiments unnecessarily difficult to understand. In addition, all embodiments may be used in combination with each other.

[0046] Embodiment 1: Figure 1-5 As shown, an ion implanter comprises:

[0047] The wafer stage 1 is located at the starting point of the conveying system and is used to store the 6-inch wafer 7 to be processed and transport the wafer 7 to the next processing stage through the conveying system;

[0048] The robot arm 2 cooperates with the wafer stage 1 to transfer the wafer 7 from the wafer stage 1 to the alignment stage 3 through the control system for subsequent wafer 7 transfer operations;

[0049] The alignment stage 3 is connected to the robot arm 2 and is used to accurately position the wafer 7 before it is transferred to the target plate 6, so as to ensure that the wafer 7 is consistent with the ion implantation direction and improve the implantation accuracy;

[0050] The air lock 4 is connected to the robot 2 and switches between the atmospheric environment and the vacuum environment through the air pressure conversion function to ensure that the wafer 7 completes the air pressure balance before being transferred to the target plate 6 to prevent contamination and damage;

[0051] The V-shaped arm 5 is connected to the air lock platform 4 and is used to transfer the wafer 7 from the air lock platform 4 to the target plate 6. The design of the V-shaped arm 5 ensures the stability and precise alignment of the wafer 7 during the transfer process.

[0052] The target plate 6 is connected to a rotation drive system for fixing and rotating the 6-inch wafer 7 during the ion implantation process. The vacuum adsorption point 61 of the target plate 6 is set in the central area of ​​the target plate 6, and multiple adsorption points are evenly distributed. The wafer 7 is firmly fixed on the surface of the target plate 6 by vacuum adsorption to ensure that the wafer 7 does not shift during rotation.

[0053] Clamping points 51 are provided on both sides of the V-shaped arm 5 , and the clamping points 51 cooperate with the edge of the wafer 7 to provide a further fixing effect to prevent the wafer 7 from being deviated due to shaking during the movement.

[0054] A cooling device 62 is provided in the middle of the target disk 6 for cooling the target disk 6 during ion implantation. The cooling device 62 includes a cooling liquid channel through which the cooling liquid circulates to reduce the temperature of the target disk 6 and prevent the wafer 7 from deforming or generating thermal stress due to excessive temperature.

[0055] The left and right sides of the target plate 6 are provided with groove structures 63 for providing an operation path for the V-shaped arm 5 to ensure that the V-shaped arm 5 can smoothly transfer and retrieve the wafer 7 and prevent the wafer 7 from being hit or scratched during the transfer process.

[0056] The alignment marks 64 of the target plate 6 are arranged at the center and edge regions of the target plate 6 to ensure that the wafer 7 is accurately aligned on the target plate 6 and to ensure precise positioning during the ion implantation process.

[0057] The target plate 6 is connected to the rotation drive system by a mechanical fixing method, which includes a plurality of evenly distributed fixing points to ensure that the target plate 6 remains stable during high-speed rotation without any mechanical deviation. The rotation drive system is controlled by a high-precision servo motor and can adjust the rotation speed as required, thereby ensuring that the ion beam evenly covers the surface of the wafer 7.

[0058] The vacuum adsorption points 61 , the clamping points 51 , the alignment marks 64 and the groove structures 63 of the target plate 6 are all made of antistatic materials to prevent damage caused by static electricity accumulation during the transfer and fixing of the wafer 7 .

[0059] Specifically, the alignment mark 64 is set within a radius of 70-55 mm of the target plate 6 , which is suitable for implantation measurement of a 6-inch wafer 7 .

[0060] The wafer 7 is fixed by the vacuum adsorption point 61, combined with the fixed transmission of the clamping point 51 of the V-arm 5, so that the wafer 7 can remain stable during the rotation process to avoid displacement, thereby solving the problem of unstable position of the wafer 7 when producing 6-inch wafer 7 in the existing ion implanter, and enabling the ion implanter to prevent the wafer 7 from displacement when producing 6-inch wafer 7.

[0061] Embodiment 2: Figure 6-8 As shown, based on the first embodiment, this embodiment further improves the clamping point 51, including:

[0062] A clamping arm 511; one end of the clamping arm 511 is fixed to the V-shaped arm 5, and the other end is provided with a clamping head 512 that can gently contact the wafer 7;

[0063] An elastic adjustment mechanism 513 is provided between the clamping arm 511 and the clamping head 512, so that the clamping point 51 can adapt to the change of the edge of the wafer 7 and adjust the contact pressure;

[0064] By adjusting the angle of the clamping point 51, it can adapt to 6-inch wafers 7 of different thicknesses and edge shapes, ensuring that the clamping point 51 always maintains the best contact angle with the edge of the wafer 7 during movement, avoiding displacement of the wafer 7 due to uneven pressure or looseness.

[0065] Embodiment 3: Figure 1-8As shown, based on the embodiment 1-2, this embodiment further provides a method for using an ion implanter, comprising: placing the wafer 7 to be processed on the wafer stage 1, and the conveying system automatically senses the presence of the wafer 7;

[0066] The wafer 7 is transferred from the wafer stage 1 to the alignment stage 3 by the robot arm 2;

[0067] The wafer 7 is aligned on the alignment stage 3. After the alignment is completed, the robot arm 2 transfers the wafer 7 from the alignment stage 3 to the air lock stage 4.

[0068] Performing air pressure conversion on the air lock stage 4 to switch the atmospheric environment to a vacuum environment to meet the process requirements of ion implantation;

[0069] After the gas pressure conversion is completed, the V-shaped arm will transfer the wafer 7 from the gas lock table 4 to the target plate 6;

[0070] The wafer 7 is placed on the target plate 6, and the wafer 7 is fixed at the center of the target plate 6 through the vacuum adsorption point 61 of the target plate 6, so as to ensure that the wafer 7 is stable and motionless during the entire ion implantation process;

[0071] The target plate 6 starts to rotate to ensure that the ion beam evenly covers the surface of the wafer 7 to achieve accurate ion implantation;

[0072] After the implantation is completed, the V-shaped arm will take the wafer 7 out of the target plate 6 and put it back into the air lock stage 4, and the air lock stage 4 will restore the air pressure and convert the vacuum environment back to the atmospheric environment;

[0073] The robot arm 2 transfers the processed wafer 7 from the air lock 4 back to the wafer carrier 1 to complete the entire ion implantation process;

[0074] After ion implantation is completed for each wafer 7, the entire process will repeat the above steps until all wafers 7 are processed.

[0075] Although the above describes the illustrative specific implementation methods of the present application so that technicians in this technical field can understand the present application, the present application is not limited to the scope of the specific implementation methods. For ordinary technicians in this technical field, as long as various changes are within the spirit and scope of the present application defined and determined by the attached claims, all application creations using the concept of the present application are protected.

Claims

1. An ion implanter, include: A wafer stage, wherein the wafer stage is located at the starting point of the conveying system; A mechanical arm, the mechanical arm is movably connected to the wafer stage, and the mechanical arm and the wafer stage are used in coordination; an alignment stage connected to one end of the robotic arm; an air lock platform connected to the other end of the robotic arm; A V-shaped arm, the V-shaped arm is connected to the air lock platform, and the V-shaped arm is used to transfer the wafer to the target plate; It is characterized in that The target plate is connected to a rotation drive system, a plurality of vacuum adsorption points are arranged in the central area of ​​the target plate, the vacuum adsorption points are used to fix the wafer, and an alignment mark with the wafer is arranged on the surface of the target plate; The left and right sides of the target plate are provided with groove structures for providing a path for the V-shaped arm. Clamping points are provided on both sides of the V-shaped arm, and the clamping points are fixed to the edge of the wafer.

2. An ion implanter according to claim 1, It is characterized in that A cooling device is arranged in the middle of the target plate.

3. An ion implanter according to claim 1, It is characterized in that The target disk has a diameter smaller than the wafer diameter.

4. An ion implanter according to claim 1, It is characterized in that The groove structures are located at both sides of the target plate and match the grasping structures of the V-shaped arms.

5. An ion implanter according to claim 1, It is characterized in that The target plate is connected to the rotation drive system by a mechanical fixing method, and the mechanical fixing method includes a plurality of evenly distributed fixing points.

6. An ion implanter according to claim 1, It is characterized in that The alignment marks are arranged at the center and edge areas of the target disk.

7. An ion implanter according to claim 1, It is characterized in that The vacuum adsorption points, the clamping points, the alignment marks and the groove structure of the target plate are all made of antistatic materials.

8. An ion implanter according to claim 1, It is characterized in that The rotation drive system is controlled by a servo motor.

9. An ion implanter according to claim 1, It is characterized in that Wafers are transferred between the target plate and the air lock platform via the V-shaped arm.

10. A method for using an ion implanter, It is characterized in that An ion implanter as claimed in any one of claims 1 to 9, comprising the following steps: Placing the wafer to be processed on the wafer stage, and the conveying system will automatically sense the presence of the wafer; transferring the wafer from the wafer stage to the alignment stage by the robot arm; The wafer is aligned on the alignment stage, and after the alignment is completed, the robot arm transfers the wafer from the alignment stage to the air lock stage; Performing gas pressure conversion on the gas lock stage to switch the atmospheric environment to a vacuum environment to meet the process requirements of ion implantation; After the gas pressure conversion is completed, the V-shaped arm will transfer the wafer from the gas lock table to the target plate; The wafer is placed on the target plate, and the wafer is fixed at the center of the target plate through the vacuum adsorption point of the target plate, so as to ensure that the wafer is stable and motionless during the entire ion implantation process; The target disk starts to rotate to ensure that the ion beam evenly covers the surface of the wafer to achieve accurate ion implantation; After the implantation is completed, the V-shaped arm will take the wafer out of the target plate and put it back into the air lock stage, and the air lock stage will restore the air pressure and convert the vacuum environment back to the atmospheric environment; The robot arm will transfer the processed wafer from the air lock stage back to the wafer carrier to complete the entire ion implantation process; After ion implantation is completed for each wafer, the entire process will repeat the above steps until all wafers are processed.

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