Solar cell, preparation method thereof and electric equipment

Abstract

The invention provides a solar cell and a preparation method thereof, and electric equipment, the solar cell comprises a substrate, a conductive layer, a grid line layer, a perovskite functional layer and an electrode layer, the conductive layer is arranged on the substrate, the conductive layer is provided with a plurality of conductive parts, first gaps are arranged among the conductive parts, the grid line layer is arranged on the conductive layer, the grid line layer comprises a plurality of grid lines, and the perovskite functional layer is arranged between the plurality of grid lines. The grid lines are arranged on the conductive parts, the perovskite functional layer is arranged on the conductive layer and the grid line layer, the perovskite functional layer comprises a plurality of functional parts, second gaps are formed between the functional parts, each functional part is arranged on two adjacent conductive parts, each grid line is located between the adjacent first gap and second gap, and the electrode layer is arranged on the perovskite functional layer. The electrode layer comprises a plurality of electrodes, second gaps are arranged among the electrodes, the electrodes are electrically connected with the grid lines to realize series connection in the solar cell, and meanwhile, the perovskite functional layer and the electrode layer are penetrated in a one-step etching mode, so that the preparation process of the perovskite solar cell is simplified.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, and electrical equipment. Background Art

[0002] Perovskite solar cells refer to cells that use perovskite materials as light-absorbing layer materials. Perovskite solar cells have received widespread attention and developed rapidly due to their significant performance advantages such as high light absorption coefficient, carrier mobility, and direct and adjustable optical band gap. However, in existing perovskite solar cells, several sub-cells are formed in the solar cell by laser scribing. At the same time, channels are formed in the perovskite functional layer by laser scribing, and conductive materials are arranged in the channels to achieve series connection in the solar cell, resulting in a complicated preparation process for perovskite solar cells.

[0003] Therefore, how to propose a solar cell with a simple preparation process is an urgent problem to be solved. Summary of the invention

[0004] In view of the above problems, the present application provides a solar cell with a simple preparation process and a preparation method and electrical equipment thereof.

[0005] In a first aspect, the present application provides a solar cell, comprising: a substrate; a conductive layer, arranged on the substrate, the conductive layer having a plurality of conductive parts, with a first gap between the conductive parts; a gate line layer, arranged on the conductive layer, the gate line layer comprising a plurality of gate lines, and the gate lines are arranged on the conductive parts; a perovskite functional layer, arranged on the conductive layer and the gate line layer, the perovskite functional layer comprising a plurality of functional parts, with a second gap between the functional parts, each functional part is arranged on two adjacent conductive parts, and each gate line is located between adjacent first gaps and second gaps; an electrode layer, arranged on the perovskite functional layer, the electrode layer comprising a plurality of electrodes, with a second gap between the electrodes, and the electrodes are electrically connected to the gate lines.

[0006] In the technical solution of the embodiment of the present application, a gate line layer is arranged between the conductive layer and the perovskite functional layer, the conductive layer has a plurality of conductive parts, the gate line layer includes a plurality of gate lines, the gate lines are arranged on the conductive parts, the perovskite functional layer includes a plurality of functional parts, the electrode layer includes a plurality of electrodes, each functional part and the electrode arranged thereon have a second gap with the adjacent functional part and the electrode arranged thereon, each functional part is arranged at two adjacent conductive parts, each gate line is located between the adjacent first gap and the second gap, and the electrodes and the gate lines are electrically connected to realize the series connection in the solar cell. At the same time, each functional part and the electrode arranged thereon have a second gap with the adjacent functional part and the electrode arranged thereon, that is, in the preparation process, the perovskite functional layer and the electrode layer can be penetrated by a one-step engraving method, thereby simplifying the preparation process of the perovskite solar cell.

[0007] In some embodiments, the gate line includes a gate line body, a first extension portion and / or a second extension portion is provided at the end of the gate line body, the functional portion covers the gate line body, the first extension portion and / or the second extension portion is exposed from the functional portion, the electrode includes a diffusion portion, a first electrical connection portion and / or a second electrical connection portion is provided at the end of the diffusion portion, the diffusion portion is provided in the functional portion, the first electrical connection portion is electrically connected to the first extension portion and / or the second electrical connection portion is electrically connected to the second extension portion.

[0008] In the technical solution of the embodiment of the present application, by exposing the first extension part and / or the second extension part to the functional part, the first extension part is electrically connected to the first electrical connection part and / or the second extension part is electrically connected to the second electrical connection part, thereby realizing electrical connection between the gate line and the electrode.

[0009] In some embodiments, the substrate includes a first region, a second region, and a third region, the second region is located between the first region and the third region, and the conductive layer is disposed in the second region.

[0010] In the technical solution of the embodiment of the present application, by setting the conductive layer in the second area, there is no need to set the conductive layer in the first area and the third area, which reduces the probability of short circuit problems in the conductive parts of the conductive layer in the first area and the third area, thereby increasing the stability of the solar cell.

[0011] In some embodiments, the first extension portion and the first electrical connection portion are located in the first region, the first extension portion is disposed on the substrate, and the first electrical connection portion is disposed on the first extension portion or on the first extension portion and the substrate.

[0012] In the technical solution of the embodiment of the present application, the first extension portion is disposed on the substrate, and the first extension portion and the first electrical connection portion are electrically connected to form a current path in the solar cell.

[0013] In some embodiments, the second extension portion and the second electrical connection portion are located in the third region, the second extension portion is disposed on the substrate, and the second electrical connection portion is disposed on the second extension portion or on the second extension portion and the substrate.

[0014] In the technical solution of the embodiment of the present application, the second extension portion is disposed on the substrate, and the second extension portion is electrically connected to the second electrical connection portion, thereby forming a current path in the solar cell.

[0015] In some embodiments, the substrate includes a first region, a second region, and a third region, the second region is located between the first region and the third region, the conductive layer is arranged in the second region, and is also arranged in the first region and / or the third region, the conductive layers of the first region and the third region are insulated from the conductive layer of the second region, and the conductive layers of the first region and the third region have multiple conductive branches, the conductive branches correspond to the conductive parts, and the conductive branches are insulated from each other.

[0016] In the technical solution of the embodiment of the present application, the conductive layer is arranged in the second area, and is also arranged in the first area and / or the third area. By insulating the conductive layers in the first area and the third area from the conductive layer in the second area, the process of peeling off the conductive layer located in the first area and the conductive layer located in the second area is omitted, thereby saving production time and improving production efficiency.

[0017] In some embodiments, the first extension portion and the first electrical connection portion are located in the first region, the first extension portion is disposed on a conductive branch, and the first electrical connection portion is disposed on the first extension portion and / or the conductive branch where the first extension portion is located.

[0018] In the technical solution of the embodiment of the present application, by setting the first extension portion on a conductive branch, the conductive branch is insulated from the conductive layer of the second region, and at the same time, the conductive branches are insulated from each other. Therefore, when the first electrical connection portion is set on the first extension portion and / or the conductive branch where the first extension portion is located, short circuit will not occur, thereby increasing the stability of the solar cell.

[0019] In some embodiments, the second extension portion and the second electrical connection portion are located in the third region, the second extension portion is disposed on a conductive branch, and the second electrical connection portion is disposed on the second extension portion and / or the conductive branch where the second extension portion is located.

[0020] In the technical solution of the embodiment of the present application, by setting the second extension portion on a conductive branch, the conductive branch is insulated from the conductive layer of the second region, and at the same time, the conductive branches are insulated from each other. Therefore, when the second electrical connection portion is set on the second extension portion and / or the conductive branch where the second extension portion is located, short circuit will not occur, thereby increasing the stability of the solar cell.

[0021] In some embodiments, the thickness of the gate line is greater than or equal to 40 nm, and may be 40-80 nm.

[0022] In the technical solution of the embodiment of the present application, the thickness of the gate line is within the above range, and the solar cell has a higher photoelectric conversion rate.

[0023] In a second aspect, the present application also proposes a method for preparing a solar cell, comprising:

[0024] providing a substrate;

[0025] A conductive layer is arranged on the substrate, wherein the conductive layer has a plurality of conductive parts, and first gaps are formed between the conductive parts;

[0026] A gate line layer is arranged on the conductive layer, wherein the gate line layer includes a plurality of gate lines, and the gate lines are arranged on the conductive part;

[0027] Disposing a perovskite functional layer on the conductive layer and the gate line layer;

[0028] An electrode layer is arranged on the perovskite functional layer, and a second gap is formed by penetrating the electrode layer and the perovskite functional layer. The perovskite functional layer includes a plurality of functional parts, and a second gap is provided between the functional parts. Each functional part is arranged at two adjacent conductive parts, and each gate line is located between adjacent first gaps and second gaps. The electrode layer includes a plurality of electrodes, and a second gap is provided between the electrodes. The electrodes are electrically connected to the gate lines.

[0029] In the technical solution of the embodiment of the present application, the conductive layer is formed into a number of conductive parts isolated in sequence through the first gap. At the same time, the gate line is arranged on the conductive part, and the gate line is electrically connected to the electrode to form a current path in the solar cell, thereby realizing the conversion of light energy into electrical energy. The gate line will not contact the perovskite layer, thereby increasing the stability of the solar cell.

[0030] In a third aspect, the present application further provides an electrical device, including the solar cell as described above or a solar cell prepared by the method for preparing a solar cell as described above.

[0031] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A top view of a partial structure of a solar cell according to some embodiments of the present application;

[0033] Figure 2 A cross-sectional view of a partial structure of a solar cell according to some embodiments of the present application;

[0034] Figure 3 A top view of a partial structure of a solar cell according to some embodiments of the present application;

[0035] Figure 4 A top view of a partial structure of a solar cell according to some other embodiments of the present application;

[0036] Figure 5 A cross-sectional view of a partial structure of a solar cell according to some embodiments of the present application;

[0037] Figure 6 A top view of a partial structure of a solar cell according to some embodiments of the present application;

[0038] Figure 7 A cross-sectional view of a partial structure of a solar cell according to some embodiments of the present application;

[0039] Figure 8A top view of the overall structure of a solar cell according to some embodiments of the present application;

[0040] Fig. 9 A cross-sectional view of the overall structure of a solar cell according to some embodiments of the present application;

[0041] Fig.10 This is a schematic diagram of the structure of electrical equipment in some embodiments of the present application.

[0042] In the drawings, the drawings are not drawn to scale.

[0043] Description of markings: solar cell 100, substrate 10, first region 11, second region 12, third region 13, conductive layer 20, conductive portion 21, conductive branch 22, first portion 221, second portion 222, first gap 21a, third gap 22a, gate line layer 30, gate line 31, first extension portion 311, gate line body 312, second extension portion 313, perovskite functional layer 40, functional portion 41, second gap 41a, hole transport layer 42, perovskite layer 43, electron transport layer 44, electrode layer 50, electrode 51, first electrical connection portion 511, diffusion portion 512, second electrical connection portion 513, electrical device 1000. DETAILED DESCRIPTION

[0044] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0046] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.

[0047] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0048] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0049] At present, from the perspective of market development, the application of perovskite solar cells is becoming more and more extensive. Perovskite solar cells can be used in lunar rovers, satellite sails, various sensors, detectors, as well as in wearable electronic products, automobile power supply and other civilian products. Perovskite solar cells have become a power source for consumer products in many aspects. With the continuous expansion of the application field of perovskite solar cells and the flexible foldability of perovskite solar cells, the market demand is also constantly expanding.

[0050] In the perovskite solar cell in the related art, a perovskite functional layer is usually formed on a conductive layer, and a channel is formed in the perovskite functional layer by laser scribing. The channel penetrates the perovskite functional layer in the thickness direction, and an electrode layer is formed by arranging a conductive material on the perovskite functional layer. The conductive material is also arranged in the channel to realize electrical connection between the conductive layer and the electrode layer. Then, the electrode layer and the perovskite functional layer are scribed for each perovskite solar cell module to form a plurality of sub-cells. Since the scribe of the perovskite functional layer and the scribe of the electrode layer and the perovskite functional layer are two independent steps, the preparation process of the perovskite solar cell is complicated.

[0051] In order to solve the above technical problems, the present application relates to a solar cell, including a substrate, a conductive layer, a gate line layer, and a perovskite functional layer electrode layer; the conductive layer is arranged on the substrate, the conductive layer has a plurality of conductive parts, and a first gap is provided between the conductive parts; the gate line layer is arranged on the conductive layer, the gate line layer includes a plurality of gate lines, and the gate lines are arranged on the conductive parts; the perovskite functional layer is arranged on the conductive layer and the gate line layer, the perovskite functional layer includes a plurality of functional parts, and a second gap is provided between the functional parts, each functional part is arranged on two adjacent conductive parts, and each gate line is located between the adjacent first gap and the second gap; the electrode layer is arranged on the perovskite functional layer, the electrode layer includes a plurality of electrodes, and a second gap is provided between the electrodes, and the electrodes are electrically connected to the gate lines.

[0052] By setting a gate line layer between the conductive layer and the perovskite functional layer, the conductive layer has a plurality of conductive parts, the gate line layer includes a plurality of gate lines, the gate lines are arranged on the conductive parts, the perovskite functional layer includes a plurality of functional parts, the electrode layer includes a plurality of electrodes, each functional part and the electrode arranged thereon have a second gap with the adjacent functional part and the electrode arranged thereon, each functional part is arranged at two adjacent conductive parts, each gate line is located between the adjacent first gap and the second gap, and the electrodes and the gate lines are electrically connected to realize the series connection in the solar cell. At the same time, each functional part and the electrode arranged thereon have a second gap with the adjacent functional part and the electrode arranged thereon, that is, in the preparation process, the perovskite functional layer and the electrode layer can be penetrated by a one-step engraving method, thereby simplifying the preparation process of the perovskite solar cell.

[0053] In addition, in the related technologies mentioned above, there are many defects in forming channels in the perovskite functional layer by laser scribing. For example, if the energy of the laser scribing is too small, the perovskite functional layer will remain in the channel, and if the energy of the laser scribing is too large, the conductive layer will be damaged. Therefore, whether the energy of the laser scribing is too large or too small, the series resistance of the perovskite solar cell will increase, which may easily lead to poor stability of the perovskite solar cell.

[0054] In the present application, since the step of separately scratching the perovskite functional layer is omitted, the problem of increasing the series resistance of the solar cell caused by this step does not occur, thereby improving the stability of the solar cell.

[0055] The solar cell disclosed in the embodiment of the present application can be used in electrical equipment that uses photoelectric conversion. The electrical equipment can be, but is not limited to, mobile phones, tablets, laptops, electric toys, electric tools, battery cars, electric cars, ships, spacecraft, detectors, etc. Among them, electric toys can include fixed or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and spacecraft can include airplanes, rockets, space shuttles, and spacecrafts, etc.

[0056] See also Figure 7 and Figure 8 According to some embodiments of the present application, the present application provides a solar cell 100, including:

[0057] Substrate 10;

[0058] The conductive layer 20 is disposed on the substrate 10. The conductive layer 20 has a plurality of conductive portions 21. There are first gaps 21a between the conductive portions 21.

[0059] The gate line layer 30 is disposed on the conductive layer 20 . The gate line layer 30 includes a plurality of gate lines 31 . The gate lines 31 are disposed on the conductive portion 21 .

[0060] The perovskite functional layer 40 is disposed on the conductive layer 20 and the gate line layer 30. The perovskite functional layer 40 includes a plurality of functional parts 41. There are second gaps 41a between the functional parts 41. Each functional part 41 is disposed on two adjacent conductive parts 21. Each gate line 31 is located between adjacent first gaps 21a and second gaps 41a.

[0061] The electrode layer 50 is disposed on the perovskite functional layer 40 . The electrode layer 50 includes a plurality of electrodes 51 . A second gap 41 a is formed between the electrodes 51 . The electrodes 51 are electrically connected to the gate lines 31 .

[0062] See also Figure 1 to Figure 2 There are many types of substrates 10, which can be applied to devices with different requirements. The substrate 10 includes but is not limited to at least one of polyethylene terephthalate (PET) substrate, polyetherimide (PEI) substrate, velvet silicon substrate, glass substrate, and mica substrate. PET substrate, PEI substrate, velvet silicon substrate, glass substrate, and mica substrate have high light transmittance, which can allow more sunlight to enter the perovskite functional layer 40, thereby improving the photoelectric conversion efficiency of the solar cell 100. Among them, the glass substrate includes at least one of tempered glass, float glass, and anti-reflection glass; the mica substrate includes but is not limited to muscovite mica substrate, which has extremely high light transmittance and high flexibility and thermal stability.

[0063] The conductive layer 20 is a transparent conductive layer, and the conductive layer 20 has high light transmittance, which is beneficial to improving the photoelectric conversion efficiency of the solar cell. The conductive layer 20 can be fluorine-doped tin oxide (FTO), which has good visible light transmittance, and has the advantages of large ultraviolet absorption coefficient, low resistivity, stable chemical properties, and strong acid and alkali resistance. Of course, the conductive layer 20 can also be tin-doped indium trioxide (ITO), which has the advantages of high light transmittance and good conductivity.

[0064] During the preparation process, a conductive layer 20 may be disposed on the substrate 10, and a first gap 21a may be formed by a scribing process. Adjacent conductive portions 21 are isolated by the first gap 21a.

[0065] See also Figures 3 to 5 The gate line layer 30 may be a metal layer including copper, gold, silver and alloys thereof. The gate line layer 30 may be disposed on the conductive layer 20 by evaporation, sputtering, deposition, electroplating, printing and the like, but is not limited thereto.

[0066] See also Figure 6 to Figure 7, the perovskite functional layer 40 may include an electron transport layer 44, a hole transport layer 42 and a perovskite layer 43. The solar cell 100 may be a formal solar cell 100 or an inverted solar cell 100. In the formal solar cell 100, the electron transport layer 44, the perovskite layer 43 and the hole transport layer 42 are sequentially stacked in the direction from the conductive layer 20 to the electrode layer 50. In the inverted solar cell 100, the hole transport layer 42, the perovskite layer 43 and the electron transport layer 44 are sequentially stacked in the direction from the conductive layer 20 to the electrode layer 50. The embodiment of the present application is described by taking the inverted solar cell 100 as an example.

[0067] The hole transport layer 42 has the function of transporting holes and blocking electrons, and the electron transport layer 44 has the function of transporting electrons and blocking electron-hole recombination. The hole transport layer 42 and the electron transport layer 44 enable the solar cell 100 to have a higher photoelectric conversion efficiency.

[0068] See also Figures 8 to 9 The electrode layer 50 may be made of metal material or transparent conductive material. The metal material may be copper, gold, silver or other metals and their alloys. The transparent conductive material may be indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide or the like.

[0069] When sunlight irradiates the perovskite layer 43, the sunlight photons are absorbed by the perovskite layer 43, and the perovskite layer 43 absorbs the photons to generate "electron-hole pairs". The built-in electric field generated by the energy level difference between the hole transport layer 42, the perovskite layer 43 and the electron transport layer 44 will accelerate the transmission of electrons and holes, that is, the electrons and holes are separated and transitioned under the action of the built-in electric field. The holes transition to the hole transport layer 42 and are transmitted from the hole transport layer 42 to the conductive layer 20. Through this process, most of the holes are gathered in the conductive layer 20, and the direction of electron transmission is opposite to that of the hole transmission. The electrons are transmitted to the electron transport layer 44 and are transmitted from the electron transport layer 44 to the electrode layer 50. Through this process, most of the electrons are gathered in the electrode layer 50, and the gate line 31 is electrically connected through the electrode 51, so that the conductive layer 20 is electrically connected to the electrode layer 50, forming a directional movement of charges, thereby generating current and realizing the conversion of light energy into electrical energy.

[0070] By setting a gate line layer 30 between the conductive layer 20 and the perovskite functional layer 40, the conductive layer 20 has a plurality of conductive parts 21, the gate line layer 30 includes a plurality of gate lines 31, the gate lines 31 are arranged on the conductive part 21, the perovskite functional layer 40 includes a plurality of functional parts 41, the electrode layer 50 includes a plurality of electrodes 51, each functional part 41 and the electrode 51 arranged thereon have a second gap 41a between them and the adjacent functional part 41 and the electrode 51 arranged thereon, each functional part 41 is arranged between two adjacent conductive parts 21, each gate line 31 is located between the adjacent first gap 21a and the second gap 41a, and the electrodes 51 and the gate lines 31 are electrically connected to realize the series connection in the solar cell 100, and at the same time, each functional part 41 and the electrode 51 arranged thereon have a second gap 41a between them and the adjacent functional part 41 and the electrode 51 arranged thereon, that is, in the preparation process, the perovskite functional layer 40 and the electrode layer 50 can be penetrated by a one-step engraving method, thereby simplifying the preparation process of the solar cell 100.

[0071] In some embodiments, continue to refer to Figure 5 , the distance D1 between the gate line 31 and the adjacent first gap 21a is 5-20 μm.

[0072] The interval D1 between the gate line 31 and the first gap 21a adjacent thereto may be 5 μm, 5.4 μm, 5.8 μm, 6 μm, 6.5 μm, 6.8 μm, 7 μm, 7.4 μm, 7.8 μm, 8 μm, 8.4 μm, 8.6 μm, 9 μm, 9.3 μm, 9.8 μm, 10 μm, 10.2 μm, 10.6 μm, 11 μm, 11.4 μm, 11.6 μm, 12 μm, 12.3 μm, 12.8 μm, 13 μm, 13.4 μm, 13.9 μm, 14.5 μm, 14.8 μm. , 15μm, 15.5μm, 16μm, 16.5μm, 16.7μm, 16.9μm, 17μm, 17.5μm, 18μm, 18.5μm, 19μm, 19.5μm, 20μm, etc., or a range consisting of any two of the above values, for example, it can be 5-7μm, 8-12μm, 12.8-15μm, 16-17.5μm, 18-20μm, etc., according to actual needs, as long as the spacing D1 between the gate line 31 and the adjacent first gap 21a is in the range of 5-20μm.

[0073] In some embodiments, continue to refer to Fig. 9 , the distance D2 between the gate line 31 and the adjacent second gap 41a is 5-20 μm.

[0074] The interval D2 between the gate line 31 and the adjacent second gap 41a can be 5 μm, 5.5 μm, 5.7 μm, 6 μm, 6.4 μm, 6.8 μm, 7 μm, 7.5 μm, 7.8 μm, 8 μm, 8.6 μm, 8.9 μm, 9 μm, 9.2 μm, 9.6 μm, 10 μm, 10.5 μm, 10.8 μm, 11 μm, 11.4 μm, 11.6 μm, 12 μm, 12.5 μm, 12.8 μm, 13 μm, 13.6 μm, 13.9 μm, 14 μm, 14.5 μm, 15 μm, 15.6 μm, 15.8 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, 26 μm, 27 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 33 μm, 34 μm, 35 μm, 36 μm, 37 μm, 38 μm, 39 μm, 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, 50 μm, 51 μm, 52 μm, 53 μm, 54 μm, 55 μm, 56 μm, 57 μm, 58 μm, 59 μm, 5 .5μm, 16μm, 16.5μm, 16.7μm, 17μm, 17.4μm, 17.7μm, 18μm, 18.5μm, 19μm, 19.5μm, 20μm, etc., or a range consisting of any two of the above values, for example, it can be 5-7.5μm, 9-10.8μm, 11-13.6μm, 14-16.5μm, 17-18.5μm, 19-20μm, etc., according to actual needs, as long as the spacing D2 between the gate line 31 and the adjacent second gap 41a is in the range of 5-20μm.

[0075] In some embodiments, continue to refer to Figure 2 , the width W1 of the first gap 21a is 20-200 μm.

[0076] In the technical solution of the embodiment of the present application, the width W1 of the first gap 21a can be 20μm, 25μm, 30μm, 35μm, 40μm, 45μm, 50μm, 56μm, 60μm, 66μm, 70μm, 73μm, 78μm, 80μm, 85μm, 88μm, 90μm, 96μm, 98μm, 100μm, 105μm, 110μm, 116μm, 120μm, 127μm, 130μm, 135μm, 140μm, 146μm, 150μm, 157μm, 158μm, 160μm, 161μm, 162μm, 163μm, 164μm, 166μm, 168μm, 169μm, 170μm, 171μm, 172μm, 173μm, 174μm, 175μm, 176μm, 177μm, 178μm, 179μm, 180μm, 181μm, 182μm, 183μm, 184μm, 185μm, 186μm, 187μm, 188μm, 189μm, 190μm, 191μm, 192μm, 193μm, 194μm, 195μm 50μm, 154μm, 160μm, 166μm, 170μm, 175μm, 180μm, 185μm, 190μm, 196μm, 200μm, etc., or a range consisting of any two of the above values, for example, it can be 20-50μm, 60-90μm, 96-110μm, 120-140μm, 146-170μm, 180-200μm, etc., according to actual needs, as long as the width W1 of the first gap 21a is in the range of 20-200μm.

[0077] In the technical solution of the embodiment of the present application, when the width W1 of the first gap 21 a is within the above range, the solar cell 100 has better stability and cost.

[0078] In addition, if the width W1 of the first gap 21a is less than 20μm, the width below 20μm results in insufficient isolation between adjacent conductive portions 21. During the use of the solar cell 100, direct connection between adjacent conductive portions 21 may occur, affecting the stability of the solar cell 100. If the width W1 of the first gap 21a is greater than 200μm, excessive peeling of the conductive layer 20 of the solar cell 100 results in waste. Therefore, when the width W1 of the first gap 21a is within the above range, the solar cell 100 has better stability and cost.

[0079] In some embodiments, continue to refer to Figure 5 , the width W2 of the gate line 31 is 50-200 μm.

[0080] The width W2 of the gate line 31 can be 50μm, 53μm, 55μm, 60μm, 65μm, 68μm, 70μm, 75μm, 80μm, 85μm, 88μm, 90μm, 95μm, 97μm, 100μm, 106μm, 108μm, 110μm, 115μm, 120μm, 125μm, 130μm, 135μm, 138μm, 140μm, 143μm, 146μm, 150μm, 154μm, 160μm, 166μm, 170μm, 175μm, 180μm, 185μm, 190μm, 196μm, 200μm, etc., or a range consisting of any two of the above values, for example, it can be 50-75μm, 90-110μm, 115-130μm, 140-166μm, 170-185μm, 190-200μm, etc., according to actual needs, as long as the width W2 of the gate line 31 is in the range of 50-200μm.

[0081] In the technical solution of the embodiment of the present application, when the width W2 of the gate line 31 is within the above range, the solar cell 100 has a higher photoelectric conversion efficiency.

[0082] In addition, if the width W2 of the gate line 31 is less than 50 μm, the width below 50 μm causes the resistance of the gate line 31 to increase, affecting the photoelectric conversion efficiency of the solar cell 100, resulting in reduced performance of the solar cell 100. If the width W2 of the gate line 31 is greater than 200 μm, the area of ​​the gate line 31 covered by the perovskite functional layer 40 is too large, resulting in a reduction in the light receiving area of ​​the perovskite functional layer 40, resulting in a reduction in the photoelectric conversion efficiency of the solar cell 100. Therefore, when the width W2 of the gate line 31 is within the above range, the solar cell 100 can have a higher photoelectric conversion efficiency.

[0083] In some embodiments, continue to refer to Fig. 9, the width W3 of the second gap 41a is 50-200 μm.

[0084] The width W3 of the second gap 41a may be 50 μm, 56 μm, 58 μm, 60 μm, 65 μm, 67 μm, 70 μm, 74 μm, 80 μm, 86 μm, 88 μm, 90 μm, 94 μm, 97 μm, 100 μm, 10 5μm, 107μm, 110μm, 114μm, 118μm, 120μm, 123μm, 127μm, 130μm, 136μm, 138μm, 140μm, 145μm, 148μm, 150μm, 155μm , 160μm, 166μm, 170μm, 176μm, 180μm, 185μm, 190μm, 196μm, 200μm, etc., or a range consisting of any two of the above values, for example, it can be 50-70μm, 80-100μm, 105-120μm, 130-145μm, 150-166μm, 170-185μm, 190-200μm, etc., according to actual needs, as long as the width W3 of the second gap 41a is in the range of 50-200μm.

[0085] In the technical solution of the embodiment of the present application, when the width W3 of the second gap 41 a is 50-200 μm, the stability and photoelectric conversion efficiency of the solar cell 100 are improved.

[0086] In addition, if the width W3 of the second gap 41a is less than 50 μm, the solar cell 100 may be at risk of short circuit, affecting the performance of the solar cell 100. If the width W3 of the second gap 41a is greater than 200 μm, the proportion of the effective area of ​​photoelectric conversion decreases, resulting in low photoelectric conversion efficiency. Therefore, when the width W3 of the second gap 41a is within the above range, the performance of the solar cell 100 is more stable and has good photoelectric conversion efficiency.

[0087] In the technical solution of the embodiment of the present application, the conductive layer 20 is formed into a plurality of conductive parts 21 which are isolated in sequence through the first gap 21a, and at the same time, the gate line 31 is arranged on the conductive part 21, and the second gap 41a penetrates the hole transport layer 42, the perovskite layer 43, the electron transport layer 44 and the electrode layer 50. The second gap 41a divides the solar cell 100 into a plurality of sub-cells, and the gate line 31 is electrically connected to the electrode 51 to form a current path, that is, in the preparation process, the perovskite functional layer and the electrode layer can be penetrated by a one-step scribing method, thereby simplifying the preparation process of the perovskite solar cell.

[0088] In some embodiments, the gate line 31 includes a gate line body 312, the end of the gate line body 312 is provided with a first extension portion 311 and / or a second extension portion 313, the functional portion 41 covers the gate line body 312, the first extension portion 311 and / or the second extension portion 313 are exposed from the functional portion 41, the electrode 51 includes a diffusion portion 512, the end of the diffusion portion 512 is provided with a first electrical connection portion 511 and / or a second electrical connection portion 513, the diffusion portion 512 is provided in the functional portion 41, the first electrical connection portion 511 is electrically connected to the first extension portion 311 and / or the second electrical connection portion 513 is electrically connected to the second extension portion 313.

[0089] In the technical solution of the embodiment of the present application, in the extension direction of the gate line 31, the length of the gate line 31 is at least greater than the length of the functional part 41, so that the first extension part 311 and / or the second extension part 313 of the gate line 31 are exposed to the functional part 41, and the length of the electrode 51 may also be greater than the length of the functional part 41, so as to facilitate the first electrical connection part 511 to be electrically connected to the first extension part 311 and / or the second electrical connection part 513 to be electrically connected to the second extension part 313.

[0090] In the extension direction of the gate line 31, the length of the substrate 10 can also be at least greater than the length of the functional portion 41, and greater than or equal to the length of the gate line 31, so that the first extension portion 311 and the second extension portion 313 are not only exposed to the functional portion 41, but can also be arranged on the substrate 10. The substrate 10 supports the first extension portion 311 and the second extension portion 313, thereby alleviating the damage of the first extension portion 311 and the second extension portion 313 caused by external force, thereby increasing the stability of the solar cell 100.

[0091] In the direction from the substrate 10 to the electrode layer 50, the gate line 31 is located between the conductive layer 20 and the hole transport layer 42. The thickness of the gate line 31 is less than the thickness of the hole transport layer 42, so that the gate line body 312 can be completely covered by the hole transport layer 42, and the gate line 31 will not contact the perovskite layer 43, thereby alleviating the problem that the gate line 31 may cause damage to the perovskite layer 43, thereby increasing the stability of the solar cell 100 and extending the service life of the solar cell 100.

[0092] In the technical solution of the embodiment of the present application, by exposing the first extension portion 311 and / or the second extension portion 313 to the functional portion 41, the first extension portion 311 is electrically connected to the first electrical connection portion 511 and / or the second extension portion 313 is electrically connected to the second electrical connection portion 513, thereby realizing electrical connection between the gate line 31 and the electrode 51.

[0093] In some embodiments, the substrate 10 includes a first region 11 , a second region 12 , and a third region 13 , the second region 12 is located between the first region 11 and the third region 13 , and the conductive layer 20 is disposed in the second region 12 .

[0094] The first region 11, the second region 12, and the third region 13 may be sequentially connected in the extension direction of the gate line 31. The conductive layer 20 is disposed in the second region 12, the gate line body 312 is disposed in the conductive layer 20, the perovskite functional layer 40 is disposed in the conductive layer 20 and the gate line body 312, and the perovskite functional layer 40 may be located in the second region 12. The perovskite functional layer 40 covers the gate line body 312 and the side of the conductive layer 20 facing the gate line body 312.

[0095] In the technical solution of the embodiment of the present application, by setting the conductive layer 20 in the second area 12, there is no need to set the conductive layer 20 in the first area 11 and the third area 13, thereby reducing the probability of short circuit problems in the conductive parts 21 in the conductive layer 20 in the first area 11 and the third area 13, and increasing the stability of the solar cell 100.

[0096] In some embodiments, the first extension portion 311 and the first electrical connection portion 511 are located in the first region 11 , the first extension portion 311 is disposed on the substrate 10 , and the first electrical connection portion 511 is disposed on the first extension portion 311 or on the first extension portion 311 and the substrate 10 .

[0097] The first extension portion 311 and the first electrical connection portion 511 are located in the first region 11. The first extension portion 311 is exposed to the perovskite functional layer 40 and is disposed on the substrate 10. The diffusion portion 512 of the electrode 51 is disposed on the perovskite functional layer 40. The first electrical connection portion 511 can extend from the diffusion portion 512 toward the substrate 10, thereby being electrically connected to the first extension portion 311 to form a current path in the solar cell 100.

[0098] In some embodiments, the second extension portion 313 and the second electrical connection portion 513 are located in the third region 13 , the second extension portion 313 is disposed on the substrate 10 , and the second electrical connection portion 513 is disposed on the second extension portion 313 or on the second extension portion 313 and the substrate 10 .

[0099] The second extension portion 313 and the second electrical connection portion 513 are located in the third region 13. The second extension portion 313 is exposed to the perovskite functional layer 40 and is disposed on the substrate 10. The diffusion portion 512 of the electrode 51 is disposed on the perovskite functional layer 40. The second electrical connection portion 513 can extend from the diffusion portion 512 toward the substrate 10, thereby being electrically connected to the second extension portion 313 to form a current path in the solar cell 100.

[0100] In some embodiments, in the solar cell 100, the end of the grid line 31 may be provided with only the first extension portion 311 and not the second extension portion 313, and the end of the electrode 51 may be provided with only the first electrical connection portion 511 and not the second electrical connection portion 513. The first extension portion 311 is electrically connected to the first electrical connection portion 511, so as to realize the current path in the solar cell 100.

[0101] In some embodiments, in the solar cell 100, the end of the grid line 31 may be provided with only the second extension portion 313 and not the first extension portion 311, and the end of the electrode 51 may be provided with only the second electrical connection portion 513 and not the first electrical connection portion 511. The second extension portion 313 and the second electrical connection portion 513 are electrically connected to realize the current path in the solar cell 100.

[0102] In some embodiments, in the solar cell 100, the end of the gate line 31 may be provided with a first extension portion 311 and a second extension portion 313, and the end of the electrode 51 may be provided with a first electrical connection portion 511 and a second electrical connection portion 513. The first extension portion 311 is electrically connected to the first electrical connection portion 511, and the second extension portion 313 is electrically connected to the second electrical connection portion 513, so that a current path within the solar cell 100 can be realized.

[0103] In some embodiments, the substrate 10 includes a first region 11, a second region 12 and a third region 13, the second region 12 is located between the first region 11 and the third region 13, the conductive layer 20 is arranged in the second region 12, and is also arranged in the first region 11 and / or the third region 13, the conductive layer 20 of the first region 11 and the third region 13 is insulated from the conductive layer 20 of the second region 12, and the conductive layer 20 of the first region 11 and the third region 13 has a plurality of conductive branches 22, the conductive branches 22 correspond to the conductive parts 21, and the conductive branches 22 are insulated from each other.

[0104] Optionally, the conductive layer 20 is disposed in the second region 12 and the first region 11 , and the conductive layer 20 located in the first region 11 is insulated from the conductive layer 20 located in the second region 12 .

[0105] Optionally, the conductive layer 20 is disposed in the second region 12 and the third region 13 , and the conductive layer 20 located in the third region 13 is also insulated from the conductive layer 20 located in the second region 12 .

[0106] Optionally, the conductive layer 20 is arranged in the first region 11, the second region 12 and the third region 13, the conductive layer 20 located in the first region 11 is insulated from the conductive layer 20 located in the second region 12, and the conductive layer 20 located in the third region 13 is also insulated from the conductive layer 20 located in the second region 12.

[0107] During the preparation process, the conductive layer 20 of the first region 11 and the third region 13 can be insulated from the conductive layer 20 of the second region 12 by laser scribing, etching, cutting by a cutting machine, etc., thereby omitting the process of peeling off the conductive layer 20 located in the first region 11 and the conductive layer 20 located in the second region 12, saving production time and improving production efficiency.

[0108] The conductive layer 20 of the first region 11 and the third region 13 has a plurality of conductive branches 22, and the conductive branches 22 correspond to the conductive parts 21, and the conductive branches 22 are insulated from each other. Since the conductive layer 20 of the first region 11 and the third region 13 is insulated from the conductive layer 20 of the second region 12, the conductive branches 22 are insulated from the conductive layer 20 of the second region 12.

[0109] The first gap 21 a between the conductive portions 21 extends from an edge of the first region 11 away from the second region 12 to an edge of the third region 13 away from the second region 12 .

[0110] The conductive branch 22 has a first portion 221 and a second portion 222. The first extension portion 311 and the second extension portion 313 of the gate line 31 are located in the first portion 221. A third gap 22a is provided between the first portion 221 and the second portion 222. The third gap 22a is located between adjacent first gaps 21a and second gaps 41a, and adjacent first gaps 21a and third gaps 22a are located between two adjacent second gaps 41a. In adjacent first gaps 21a and third gaps 22a, the third gap 22a of the first region 11 and the third gap 22a of the third region 13 are located on the same side of the first gap 21a. The first portion 221 is located between the adjacent third gap 22a and the first gap 21a. Of course, the third gap 22a may also be omitted, and it is only necessary to insulate the conductive layer 20 of the first region 11 and the third region 13 from the conductive layer 20 of the second region 12, and insulate the adjacent conductive branches 22.

[0111] In the technical solution of the embodiment of the present application, the conductive layer 20 is arranged in the second area 12, and is also arranged in the first area 11 and / or the third area 13. By insulating the conductive layer 20 of the first area 11 and the third area 13 from the conductive layer 20 of the second area 12, the process of peeling off the conductive layer 20 located in the first area 11 and the conductive layer 20 located in the second area 12 is omitted, thereby saving production time and improving production efficiency.

[0112] In some embodiments, the first extension portion 311 and the first electrical connection portion 511 are located in the first region 11 , the first extension portion 311 is disposed on a conductive branch 22 , and the first electrical connection portion 511 is disposed on the first extension portion 311 and / or the conductive branch 22 where the first extension portion 311 is located.

[0113] In the technical solution of the embodiment of the present application, by setting the first extension portion 311 on a conductive branch 22, the conductive branch 22 is insulated from the conductive layer 20 of the second region 12, and at the same time, the conductive branches 22 are insulated from each other. Therefore, when the first electrical connection portion 511 is set on the first extension portion 311 and / or the conductive branch 22 where the first extension portion 311 is located, a short circuit will not occur, thereby increasing the stability of the solar cell 100.

[0114] In some embodiments, the second extension portion 313 and the second electrical connection portion 513 are located in the third region 13 , the second extension portion 313 is disposed on a conductive branch 22 , and the second electrical connection portion 513 is disposed on the second extension portion 313 and / or the conductive branch 22 where the second extension portion 313 is located.

[0115] In the technical solution of the embodiment of the present application, by setting the second extension portion 313 on a conductive branch 22, the conductive branch 22 is insulated from the conductive layer 20 of the second region 12, and at the same time, the conductive branches 22 are insulated from each other. Therefore, the second electrical connection portion 513 is set on the second extension portion 313 and / or the conductive branch 22 where the second extension portion 313 is located, and a short circuit will not occur, thereby increasing the stability of the solar cell 100.

[0116] In some embodiments, the thickness of the gate line 31 is greater than or equal to 40 nm, and may be 40-80 nm.

[0117] The thickness of the gate line 31 can be 40nm, 42nm, 44nm, 45nm, 46nm, 48nm, 49nm, 50nm, 51nm, 53nm, 55nm, 57nm, 59nm, 60nm, 62nm, 64nm, 66nm, 68nm, 70nm, 71nm, 73nm, 75nm, 78nm, 80nm, etc., or a range consisting of any two of the above values, for example, 40nm-46nm, 48nm-53nm, 55nm-60nm, 64nm-70nm, 40-80nm, 75nm-80nm, etc., and can be selected according to actual needs, as long as the thickness of the gate line 31 is within the above range.

[0118] In the technical solution of the embodiment of the present application, the thickness of the gate line 31 is within the above range, and the solar cell 100 has a higher photoelectric conversion rate.

[0119] According to some embodiments of the present application, the present application provides a method for preparing a solar cell 100, comprising the following steps:

[0120] Providing a substrate 10;

[0121] A conductive layer 20 is disposed on the substrate 10, wherein the conductive layer 20 has a plurality of conductive portions 21, and first gaps 21a are formed between the conductive portions 21;

[0122] A gate line layer 30 is disposed on the conductive layer 20 , and the gate line layer 30 includes a plurality of gate lines 31 , and the gate lines 31 are disposed on the conductive portion 21 ;

[0123] A perovskite functional layer 40 is disposed on the conductive layer 20 and the gate line layer 30;

[0124] An electrode layer 50 is disposed on the perovskite functional layer 40, and a second gap 41a is formed through the electrode layer 50 and the perovskite functional layer 40. The perovskite functional layer 40 includes a plurality of functional parts 41, and a second gap 41a is provided between the functional parts 41. Each functional part 41 is disposed between two adjacent conductive parts 21, and each gate line 31 is located between adjacent first gaps 21a and second gaps 41a. The electrode layer 50 includes a plurality of electrodes 51, and a second gap 41a is provided between the electrodes 51. The electrodes 51 are electrically connected to the gate lines 31.

[0125] In the technical solution of the embodiment of the present application, a gate line layer 30 is arranged between the conductive layer 20 and the perovskite functional layer 40, the conductive layer 20 has a plurality of conductive parts 21, the gate line layer 30 includes a plurality of gate lines 31, the gate lines 31 are arranged on the conductive parts 21, the perovskite functional layer 40 includes a plurality of functional parts 41, the electrode layer 50 includes a plurality of electrodes 51, each functional part 41 and the electrode 51 arranged thereon have a second gap 41a between them and the adjacent functional part 41 and the electrode 51 arranged thereon, and each functional part 41 is arranged between two phases. Adjacent conductive parts 21, each grid line 31 is located between adjacent first gaps 21a and second gaps 41a, and is electrically connected to the grid line 31 through the electrode 51, thereby realizing series connection within the solar cell 100. At the same time, a second gap 41a is provided between each functional part 41 and the electrode 51 arranged thereon and an adjacent functional part 41 and the electrode 51 arranged thereon, that is, during the preparation process, the perovskite functional layer 40 and the electrode layer 50 can be penetrated by a one-step engraving method, thereby simplifying the preparation process of the solar cell 100.

[0126] See also Fig.10 The present application also provides an electrical device 1000, including the solar cell 100 as described above or the solar cell 100 prepared by the method for preparing the solar cell 100 as described above.

[0127] In the present application, the solar cell 100 is used as a power source of the above-mentioned electrical device 1000 to supply power to it; or, the solar cell 100 can be used as an energy storage unit of the above-mentioned electrical device 1000. As an example, the electrical device 1000 can be a lighting element, a display element or a car.

[0128] The features and performance of the present application are further described in detail below in conjunction with the embodiments.

[0129] Embodiment 1:

[0130] This embodiment provides a method for preparing a solar cell, comprising the following steps:

[0131] Providing a substrate, wherein the substrate includes a first region, a second region, and a third region;

[0132] A conductive layer is arranged on the substrate, wherein the conductive layer has a plurality of conductive parts, a first gap is formed between the conductive parts, and the conductive layer is located in the second area;

[0133] sequentially disposing a gate line layer, a perovskite functional layer and an electrode layer on the conductive layer;

[0134] The gate line body is arranged in the conductive part, the first extension part is located in the first area, the second extension part is located in the third area, there is a second gap between the functional parts of the perovskite functional layer and between the electrodes of the electrode layer, each gate line is located between adjacent first gaps and second gaps, the functional part covers the gate line body, the first extension part and the second extension part are exposed in the functional part, the diffusion part of the electrode is arranged in the functional part, the first electrical connection part is arranged in the first extension part or arranged between the first extension part and the substrate, the second electrical connection part is arranged in the second extension part or arranged between the second extension part and the substrate, the first electrical connection part is electrically connected to the first extension part, and the second electrical connection part is electrically connected to the second extension part.

[0135] The conductive layer of the solar cell provided in Example 1 is located in the second region, the grid line body is arranged in the conductive part, the first extension part is located in the first region, the second extension part is located in the third region, and the first extension part and the second extension part are exposed in the functional part.

[0136] Embodiment 2:

[0137] Providing a substrate, wherein the substrate includes a first region, a second region, and a third region;

[0138] A conductive layer is arranged on the substrate, the conductive layer has a plurality of conductive parts, a first gap is formed between the conductive parts, the conductive layer is arranged in the second region, and is also arranged in the first region and / or the third region, the conductive layers in the first region and the third region are insulated from the conductive layer in the second region, and the conductive layers in the first region and the third region have a plurality of conductive branches, the conductive branches correspond to the conductive parts, and the conductive branches are insulated from each other;

[0139] sequentially disposing a gate line layer, a perovskite functional layer and an electrode layer on the conductive layer;

[0140] The gate line body is arranged on the conductive part, the first extension part is located in the first area, the second extension part is located in the third area, the first extension part and the second extension part are both arranged on the conductive branch, there is a second gap between the functional parts of the perovskite functional layer and between the electrodes of the electrode layer, each gate line is located between adjacent first gaps and second gaps, the functional part covers the gate line body, the first extension part and the second extension part are exposed to the functional part, the diffusion part of the electrode is arranged on the functional part, the first electrical connection part is arranged on the first extension part and / or the conductive branch where the first extension part is located, the second electrical connection part is arranged on the second extension part and / or the conductive branch where the second extension part is located, the first electrical connection part is electrically connected to the first extension part, and the second electrical connection part is electrically connected to the second extension part.

[0141] The conductive layer of the solar cell provided in Example 2 is located in the second region, the grid line body is arranged in the conductive part, and is also arranged in the first region and / or the third region, the conductive layers in the first region and the third region are insulated from the conductive layer in the second region, the conductive layers in the first region and the third region have multiple conductive branches, the conductive branches correspond to the conductive part, the conductive branches are insulated from each other, and the first extension part and the second extension part are both arranged in the conductive branches.

[0142] Comparative Example:

[0143] The comparative example provides a method for preparing a solar cell, comprising the following steps:

[0144] providing a substrate;

[0145] A conductive layer is arranged on the substrate, wherein the conductive layer has a plurality of conductive parts, and first gaps are formed between the conductive parts;

[0146] sequentially disposing a perovskite functional layer and an electrode layer on the conductive layer;

[0147] The titanium ore functional layer has a channel, the channel extending from a side of the perovskite functional layer facing the electrode layer to a side of the perovskite functional layer facing the conductive layer, and a conductive material is arranged in the channel to form a current path for the solar cell;

[0148] The perovskite functional layer and the electrode layer have a second gap that is interconnected. The second gap extends from a side of the electrode layer facing away from the perovskite functional layer to a side of the perovskite functional layer facing the conductive layer. The channel is located between the first gap and the second gap.

[0149] The titanium ore functional layer of the solar cell provided in the comparative example has a channel, and a conductive material is arranged in the channel.

[0150] The photoelectric conversion efficiency of the solar cells of Examples 1-2 and the comparative example was tested. The test method is as follows. The test results are shown in Table 1:

[0151] 1. Photoelectric conversion efficiency test:

[0152] In standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) irradiation, the battery performance is tested to obtain the IV curve. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open circuit voltage Voc (unit V), maximum light output current Jmpp (unit mA) and maximum light output voltage Vmpp (unit V). The fill factor FF of the cell is calculated by the formula FF = Jsc × Voc / (Jmpp × Vmpp), unit %. The photoelectric conversion efficiency PCE of the cell is calculated by the formula PCE = Jsc × Voc × FF / Pw, unit %; Pw represents the input power, unit mW.

[0153] Table 1: Solar cell performance parameters of Examples 1-2 and Comparative Examples

[0154] sample Gate line thickness (nm) Photoelectric conversion efficiency (%) Example 1 - Sample 1 0 0 Example 1 - Sample 2 10 16.1 Example 1 - Sample 3 20 16.4 Example 1 - Sample 4 40 17.8 Example 1 - Sample 5 60 18.4 Example 1 - Sample 6 80 19.1 Example 2 - Sample 1 0 0 Example 2 - Sample 2 10 15.7 Example 2 - Sample 3 20 16.2 Example 2 - Sample 4 40 17.5 Example 2 - Sample 5 60 17.9 Example 2 - Sample 6 80 18.6 Comparative Example 0 16.5

[0155] The test results of Examples 1-2 and the comparative example in Table 1 show that the photoelectric conversion efficiency of the solar cell provided by the present application increases with the increase of the gate line thickness. When the gate line thickness of the solar cell provided by the present application is greater than or equal to 40nm, which can be selected as 40-80nm, the photoelectric conversion efficiency of the solar cell provided by the present application is higher than that of the comparative example. At this time, the solar cell provided by the present application has high stability.

[0156] Furthermore, through the comparison between Examples 1 and 2, the photoelectric conversion efficiency of the solar cell of Example 1 is higher than the photoelectric conversion efficiency of the solar cell of Example 2.

[0157] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A solar cell, It is characterized in that include: substrate; A conductive layer is disposed on the substrate, wherein the conductive layer has a plurality of conductive parts, and a first gap is formed between the conductive parts; A gate line layer, disposed on the conductive layer, the gate line layer comprising a plurality of gate lines, and the gate lines are disposed on the conductive portion; A perovskite functional layer is disposed on the conductive layer and the gate line layer, the perovskite functional layer includes a plurality of functional parts, a second gap is provided between the functional parts, each of the functional parts is disposed on two adjacent conductive parts, and each of the gate lines is located between adjacent first gaps and second gaps; The electrode layer is arranged on the perovskite functional layer, the electrode layer includes a plurality of electrodes, the second gap is provided between the electrodes, and the electrodes are electrically connected to the gate line.

2. The solar cell according to claim 1, It is characterized in that The gate line includes a gate line body, a first extension portion and / or a second extension portion is provided at an end of the gate line body, the functional portion covers the gate line body, the first extension portion and / or the second extension portion is exposed from the functional portion, the electrode includes a diffusion portion, a first electrical connection portion and / or a second electrical connection portion is provided at an end of the diffusion portion, the diffusion portion is provided at the functional portion, the first electrical connection portion is electrically connected to the first extension portion and / or the second electrical connection portion is electrically connected to the second extension portion.

3. The solar cell according to claim 2, It is characterized in that The substrate includes a first region, a second region and a third region, the second region is located between the first region and the third region, and the conductive layer is disposed in the second region.

4. The solar cell according to claim 3, It is characterized in that The first extension portion and the first electrical connection portion are located in the first region, the first extension portion is disposed on the substrate, and the first electrical connection portion is disposed on the first extension portion or on the first extension portion and the substrate.

5. The solar cell according to claim 3 or 4, It is characterized in that The second extension portion and the second electrical connection portion are located in the third region, the second extension portion is disposed on the substrate, and the second electrical connection portion is disposed on the second extension portion or on the second extension portion and the substrate.

6. The solar cell according to claim 2, It is characterized in that The substrate includes a first region, a second region and a third region, the second region is located between the first region and the third region, the conductive layer is arranged in the second region, and is also arranged in the first region and / or the third region, the conductive layers in the first region and the third region are insulated from the conductive layer in the second region, and the conductive layers in the first region and the third region have multiple conductive branches, the conductive branches correspond to the conductive parts, and the conductive branches are insulated from each other.

7. The solar cell according to claim 6, It is characterized in that The first extension portion and the first electrical connection portion are located in the first region, the first extension portion is disposed on one of the conductive branches, and the first electrical connection portion is disposed on the first extension portion and / or the conductive branch where the first extension portion is located.

8. The solar cell according to claim 6 or 7, It is characterized in that The second extension portion and the second electrical connection portion are located in the third region, the second extension portion is disposed on one of the conductive branches, and the second electrical connection portion is disposed on the second extension portion and / or the conductive branch where the second extension portion is located.

9. The solar cell according to any one of claims 1 to 8, It is characterized in that The thickness of the gate line is greater than or equal to 40 nm, and can be optionally 40-80 nm.

10. A method for preparing a solar cell according to any one of claims 1 to 9, It is characterized in that include: providing a substrate; A conductive layer is provided on the substrate, wherein the conductive layer has a plurality of conductive parts, and first gaps are provided between the conductive parts; A gate line layer is arranged on the conductive layer, wherein the gate line layer includes a plurality of gate lines, and the gate lines are arranged on the conductive part; Disposing a perovskite functional layer on the conductive layer and the gate line layer; An electrode layer is arranged on the perovskite functional layer, and a second gap is formed by penetrating the electrode layer and the perovskite functional layer. The perovskite functional layer includes a plurality of functional parts, and the second gap is provided between the functional parts. Each of the functional parts is arranged at two adjacent conductive parts, and each of the gate lines is located between adjacent first gaps and second gaps. The electrode layer includes a plurality of electrodes, and the second gap is provided between the electrodes. The electrodes are electrically connected to the gate lines.

11. An electrical device, It is characterized in that A solar cell comprising the solar cell according to any one of claims 1 to 9 or a solar cell prepared by the method for preparing a solar cell according to claim 10.

Images