Die edge protection for eliminating die fragmentation

Abstract

A device including a die and a protective layer surrounding the die is disclosed. The protective layer is applied in the back-end process prior to dicing the wafer into individual dies. The protective layer protects the die from fragments and cracks during and after dicing the wafer.

Description

Technical Field

[0001] The present disclosure relates generally to semiconductor devices or dies and, more particularly, but not exclusively, to protecting such devices or dies to reduce or even eliminate fragmentation and to techniques for fabricating such devices or dies. Background Art

[0002] When wafers (e.g., silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), etc.) are cut into individual dies, chipping and / or cracking are big problems. Various cutting techniques (e.g., mechanical cutting, laser cutting, stealth cutting, plasma cutting, etc.) used to separate or cut wafers into individual dies have process differences. These differences cause front and / or back side chipping in the dies.

[0003] This chipping / cracking results in a reduced yield of useful die.Therefore, there is a need for systems, devices, and methods that address the chipping and cracking issues when singulating or dicing wafers into individual die, including the methods, systems, and devices provided herein. Summary of the invention

[0004] A simplified overview of one or more aspects and / or examples associated with each device and method disclosed herein is presented below. As such, the following overview should neither be considered an exhaustive overview of all considered aspects and / or examples, nor should the following overview be considered to identify key or decisive elements associated with all considered aspects and / or examples or to depict the scope associated with any particular aspect and / or example. Accordingly, the sole purpose of the following overview is to present certain concepts related to one or more aspects and / or examples of the device and method disclosed herein in a simplified form prior to the detailed description presented below.

[0005] An exemplary device is disclosed. The device may include a tube core. The device may also include a protective layer formed on the sidewalls of the tube core. The protective layer may surround all sidewalls of the tube core.

[0006] A method for manufacturing a device is disclosed. The method may include providing a tube core. The method may also include forming a protective layer on the sidewalls of the tube core. The protective layer may surround all sidewalls of the tube core.

[0007] Other features and advantages associated with the various devices and methods disclosed herein will be apparent to those skilled in the art based on the accompanying drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] A more complete appreciation thereof will be readily obtained as various aspects of the present disclosure and many of its attendant advantages become better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings, which are presented for purposes of illustration only and do not constitute a limitation of the present disclosure in any way.

[0009] Figure 1 One or more problems associated with dicing a wafer into individual die are illustrated.

[0010] FIG. 2A to FIG. 2C The stages of a conventional technique for dicing a wafer are illustrated.

[0011] Figure 3A and Figure 3B Side and top views of example modules or devices according to one or more aspects of the present disclosure are illustrated.

[0012] Figure 4A and Figure 4B A device including a die and a protection layer according to one or more aspects of the present disclosure is illustrated.

[0013] FIG. 5A to FIG. 5C A device including a die and a protection layer according to one or more aspects of the present disclosure is illustrated.

[0014] FIG. 6A to FIG. 6C A device including a die and a protection layer according to one or more aspects of the present disclosure is illustrated.

[0015] 7A to 7C A device including a die and a protection layer according to one or more aspects of the present disclosure is illustrated.

[0016] FIG. 8A to FIG. 8E Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0017] 9A to 9E Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0018] FIG. 10A to FIG. 10E Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0019] FIG. 11A to FIG. 11F Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0020] FIG. 12A to FIG. 12E Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0021] FIG. 13A to FIG. 13E Stages in fabricating a device according to one or more aspects of the present disclosure are illustrated.

[0022] Figures 14 to 16 A flow chart illustrating an example method of fabricating a device according to one or more aspects of the present disclosure.

[0023] Fig.17 Various electronic devices are illustrated that may utilize one or more aspects of the present disclosure.

[0024] Based on the drawings and detailed description, other purposes and advantages associated with the various aspects disclosed herein will be apparent to those skilled in the art. According to convention, the features depicted in the drawings may not be drawn to scale. Accordingly, for the sake of clarity, the size of the features depicted may be arbitrarily enlarged or reduced. According to convention, for the sake of clarity, some drawings are simplified. Therefore, the drawings may not depict all components of a particular device or method. In addition, similar reference numerals are used throughout the specification and the drawings to indicate similar features. DETAILED DESCRIPTION

[0025] Various aspects of the present disclosure are illustrated in the following description and related drawings for specific embodiments. Alternative aspects or embodiments may be designed without departing from the scope of the present teachings. In addition, well-known elements of the exemplary embodiments herein will not be described in detail or will be omitted to avoid obscuring the relevant details of the teachings in the present disclosure.

[0026] In some of the described example implementations, the following examples are identified where various component structures and portions of operations may be obtained from known conventional techniques and then arranged according to one or more exemplary embodiments. In such examples, internal details of portions of known conventional component structures and / or operations may be omitted to help avoid potential confusion of the concepts illustrated in the exemplary embodiments disclosed herein.

[0027] The terms used herein are for the purpose of describing specific embodiments only and are not intended to be limiting. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "having", "including", and / or "containing" when used herein indicate the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0028] As indicated above, the back-end process for dividing / cutting the wafer into individual tube cores or chips causes obvious defects in the tube core edges, which in turn bring practical risks such as reducing the yield of processable tube cores. Regardless of the technology of the tube core (e.g., silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), etc.), such risks seem to exist. Regardless of the cutting technology used (e.g., mechanical cutting, laser cutting, invisible cutting, plasma cutting, etc.), these risks also seem to exist. This is because there are process differences in all cutting technologies. For example, when using mechanical cutting technology, the cutting blade may meander and / or vibrate from the desired cutting line. Therefore, fragments and / or cracks may appear on the front and / or back of the tube core. Specifically, the edge sidewalls of the tube core may be affected by fragments and cracks.

[0029] The chipping and / or cracking may render the die unusable, resulting in reduced die yield of the wafer. Moreover, even if the die is initially usable, the chipping and / or cracking may propagate to the interior of the die as it is used due to thermal expansion and contraction experienced when it is repeatedly opened and closed.

[0030] Figure 1 One or more problems associated with dicing a wafer into individual die are illustrated. Figure 1 Wafer 100 is illustrated with a partial view of four dies or chips 110 with edges 120. Assume that wafer 100 is cut along cut lines 130. Differences in the cutting process can cause meandering of cut lines 130. This in turn can cause chips and cracks. More seriously, defects such as cracks / chips 140 may even appear within die 110.

[0031] FIG. 2A to FIG. 2C The stages of a conventional technique for dicing a wafer into individual die are illustrated. Figure 2A 2 shows the result of a front end process in which a wafer 200 is produced which includes a plurality of dies 210. Between adjacent dies are scribe regions 215. The thickness of the wafer 200 is denoted as T(w) and the width of the scribe regions 215 is denoted as W(s).

[0032] Figure 2B The stage is illustrated after wafer 200 has been back-grinded to a thickness T(d), which is the thickness of die 210 . Figure 2C The stage is illustrated after the wafer 200 has been diced into individual dies by dicing the scribe areas 215. When the wafer 200 is thinned by back grinding prior to dicing, there is a greater likelihood of chips and cracks occurring through the dicing process as mentioned above. The edges and corners of the dies 210 are particularly susceptible to chips and cracks.

[0033] To solve such problems, it is proposed to protect the die by applying a protective layer to the sidewalls of the die before the wafer is cut into individual dies. The protective layer can be applied as part of the back-end process. Generally speaking, the protective layer can be applied. Thereafter, the wafer can be cut into individual dies.

[0034] Figure 3A and Figure 3B Illustrated are side and top views of an example module or device 300 that has been protected with a protective layer 320 in accordance with one or more aspects of the present disclosure. Figure 3A A side view of a device 300 having a die 310 is illustrated, and Figure 3B The top view thereof is shown as an example. Figure 3A As shown in FIG. 3 , device 300 may include a die 310 on a substrate 330 and encapsulated with a mold compound 340. Die 310 may be connected to a board 350, such as a printed circuit board (PCB). A protective layer 320 may be formed on the sidewalls of die 310. Figure 3B As seen in FIG. 3 , the protection layer 320 may be formed on all sidewalls of the die 310 . That is, the protection layer may surround all sidewalls of the die 310 .

[0035] The protective layer 320 may be formed of one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.), or any combination thereof. In one aspect, the protective layer 320 may be formed of a material that is less brittle than the material of the die 310. Specifically, the protective layer 320 may be formed of a material that is less brittle than the material of the edge portion of the die 310. For example, the protective layer 320 may be formed of a material that is less brittle than Si, GaAs, GaN, etc.

[0036] Figure 4A and Figure 4B A device 400 according to one or more aspects of the present disclosure is illustrated. Figure 4A and Figure 4B A side view and a top view of the device 400 are illustrated, respectively. As shown, the device 400 may include a die 410 and a protective layer 420. It may be assumed that the die 410 is one of a plurality of dies of a wafer that has been diced into individual dies.

[0037] The protection layer 420 may include a sidewall protection layer 422. Figure 4A As seen in FIG. 4 , sidewall protection layer 422 (and thus protection layer 420 ) may be formed on the sidewalls of die 410 . Figure 4B As seen in FIG, sidewall protection layer 422 may surround all sidewalls of die 410. Protection layer 420 including sidewall protection layer 422 may be formed of a material similar to protection layer 320 (e.g., a passivation material metal, etc.), and thus may have similar properties (e.g., less brittle than the material of die 410).

[0038] In one aspect, the sidewall protection layer 422 can cover the entire vertical height of the sidewalls of the die 410. That is, all of the sidewalls of the die 410 can be covered by the sidewall protection layer 422. In another aspect, the upper surface of the die 410 and the upper surface of the sidewall protection layer 422 can be coplanar with each other. Alternatively or in addition, the lower surface of the die 410 and the lower surface of the sidewall protection layer 422 can be coplanar with each other.

[0039] Figure 5A , Figure 5B and Figure 5C A device 500 according to one or more aspects of the present disclosure is illustrated. Figure 5A illustrates a side view of a device 500, Figure 5B The top view thereof is illustrated. Figure 5C A bottom view thereof is illustrated. As shown, device 500 may include die 510 and protective layer 520. It may be assumed that die 510 is one of a plurality of dies of a wafer that has been cut into individual dies.

[0040] The protective layer 520 may include a sidewall protective layer 522 and an upper edge protective layer 524. Figure 5A As shown in FIG. 5 , the sidewall protection layer 522 may be formed on the sidewalls of the tube core 510. The sidewall protection layer 522 may surround all the sidewalls of the tube core 510. Figure 5A and Figure 5B As seen in FIG. 5 , the upper edge protection layer 524 may be formed on more upper edge portions of the tube core 510 and on the upper surface of the sidewall protection layer 522. Figure 5B , the dotted rectangle represents the upper edge and corner of the tube core 510. The upper edge protection layer 524 can be formed on all upper edge portions of the tube core 510. Therefore, all upper edges and corners of the tube core 510 can be covered by the protection layer 520, that is, covered by the sidewall protection layer 522 and the upper edge protection layer 522.

[0041] In one aspect, the sidewall protection layer 522 and the upper edge protection layer 524 may be integrally formed of the same material. Alternatively, they may be formed of different materials. The protection layer 520 (i.e., the sidewall protection layer 522 and the upper edge protection layer 524) may be formed of a material similar to the protection layer 320 (e.g., a passivation material metal, etc.), and therefore may have similar properties (e.g., less brittle than the material of the tube core 510).

[0042] In one aspect, protection layer 520 can cover the entire vertical height of the sidewalls of die 510 and an upper edge portion of die 510. In another aspect, the lower surface of die 510 and the lower surface of protection layer 520 can be coplanar with each other.

[0043] Fig. 6A , Figure 6B and Figure 6C A device 600 according to one or more aspects of the present disclosure is illustrated. Fig. 6A illustrates a side view of a device 600, Figure 6B The top view thereof is illustrated. Figure 6C A bottom view thereof is illustrated. As shown, device 600 may include die 610 and protective layer 620. It may be assumed that die 610 is one of a plurality of dies of a wafer that has been cut into individual dies.

[0044] The protective layer 620 may include a sidewall protective layer 622 and a lower surface protective layer 626. Fig. 6A As shown in FIG. 6 , a sidewall protection layer 622 may be formed on the sidewalls of the die 610. Fig. 6A and Figure 6B As can be seen in FIG. 6 , the sidewall protection layer 622 may surround all sidewalls of the die 610. Fig. 6A and Figure 6C As seen in FIG. 6 , the lower surface protection layer 626 may be formed on the lower surface of the die 610 and the lower surface of the sidewall protection layer 622 . Figure 5C The dashed rectangle in represents the lower edge and corner of the tube core 610. In one aspect, the lower surface protection layer 626 can cover the entire lower surface of the tube core 610. Therefore, all the lower edges and lower corners of the tube core 610 can be covered by the protection layer 620, that is, covered by the sidewall protection layer 622 and the lower surface protection layer 626.

[0045] On the one hand, the sidewall protection layer 622 and the lower surface protection layer 626 may be formed of the same material. Alternatively, they may be formed of different materials. On the one hand, the lower surface protection layer 626 may be formed of one or more metals (e.g., Cu, Al, Ti, Au, etc.) and configured as a back-side via contact for the tube core 610. The tube core 610 may be a wire-bonded tube core or a flip chip tube core. The protective layer 620 (i.e., the sidewall protection layer 622 and the lower surface protection layer 626) may be formed of a material similar to the protective layer 320 (e.g., a passivation material metal, etc.), and therefore may have similar properties (e.g., less brittle than the material of the tube core 610).

[0046] In one aspect, protective layer 620 can cover the entire vertical height of the sidewalls of die 610. In another aspect, the upper surface of die 610 and the upper surface of protective layer 620 can be coplanar with each other. In an alternative aspect, an upper edge protection layer (similar to upper edge protection layer 524) can be added (not shown). In this way, the upper edge and corners of die 610 can also be covered, for example, by the sidewall protection layer and the upper edge protection layer.

[0047] Fig. 7A , Figure 7B and Figure 7C A device 700 according to one or more aspects of the present disclosure is illustrated. Fig. 7A illustrates a side view of a device 700, Figure 7B The top view thereof is illustrated. Figure 7C A bottom view thereof is illustrated. As shown, device 700 may include die 710 and protective layer 720. It may be assumed that die 710 is one of a plurality of dies of a wafer that has been cut into individual dies.

[0048] like Fig. 7A As shown in FIG. 7 , the protective layer 720 may include an upper sidewall protective layer 728 and a lower sidewall protective layer 729. Figure 7B As seen in FIG. 7 , the upper sidewall protection layer 728 may surround the upper portion of all sidewalls of the die 710. Figure 7C As seen in FIG. 1 , lower sidewall protection layer 729 may surround the lower portion of all sidewalls of tube core 710. In one aspect, upper sidewall protection layer 728 and lower sidewall protection layer 729 may be formed of the same material. Alternatively, they may be formed of different materials. Protection layer 720 (i.e., upper sidewall protection layer 728 and lower sidewall protection layer 729) may be formed of a material similar to protection layer 320 (e.g., a passivation material metal, etc.), and therefore may have similar properties (e.g., less brittle than the material of tube core 710).

[0049] In one aspect, the upper surface of the upper sidewall protection layer 728 may be coplanar with the upper surface of the tube core 710. Alternatively or in addition, the lower surface of the lower sidewall protection layer 729 may be coplanar with the lower surface of the tube core 710. In an alternative aspect, an upper edge protection layer (similar to the upper edge protection layer 524) (not shown) may be added. In this way, the upper edge and corners of the tube core 710 may be covered, for example, by the upper sidewall protection layer and the upper edge protection layer. In another alternative aspect, a lower surface protection layer (similar to the lower surface protection layer 626) (not shown) may be added. In this way, the lower edge and corners of the tube core 710 may be covered by the lower sidewall protection layer and the lower edge protection layer. These two alternatives can be combined. That is, in another alternative, both the upper edge protection layer and the lower surface protection layer can be added.

[0050] FIG. 8A to FIG. 8E The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to FIG. 4A to FIG. 4B The device 400 illustrated in FIG. 4 includes a die 410 having a protection layer 420 (including a sidewall protection layer 422 ).

[0051] Fig. 8AThe stage after front-end processing is illustrated, in which a wafer 800 including a plurality of dies 810 may be produced. The dies 810 may be semiconductor dies (e.g., Si, GaAs, GaN, etc.). T(w) represents the thickness of the wafer 800. For example, T(w) may be approximately 700 μm. The scribe area 815 may be between adjacent dies 810 in the wafer 800. W(s) represents the width of the scribe area 815. T(w) may depend on the technology of the dies 810 (e.g., Si, GaAs, GaN, etc.) and / or the cutting technology used to cut the wafer 800. In one example, T(w) may be as small as approximately 20 μm or as large as 45 μm or more.

[0052] Figure 8B A stage is illustrated in which a groove 823 may be formed in a scribe area 815 on the front side of the wafer 800. For example, the scribe area 815 may be etched frontally, for example, by plasma, laser, etc. T(d) represents the depth of the groove. In one aspect, T(d) may be at least the thickness of the die 810. That is, the bottom of the groove may be at a height equal to or lower than the lower surface of the die 810. For a typical Si die, T(d) may be about 125 μm. For a GaAs die, T(d) may range between 150 μm-200 μm. In one aspect, the groove 823 may expose the sidewalls of the die 810. It is noted that the groove 823 between adjacent dies 810 may expose the sidewalls of both dies 810. When the wafer thickness T(w) is significantly greater than the etching depth T(d) (e.g., 700 μm vs. 175 μm), the action of etching the groove 823 is less likely to cause debris and / or cracks to occur.

[0053] Figure 8C The stage in which the trench 823 may be filled with a protective material 825 is illustrated. The protective material 825 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. In this case, the protective material 825 may fill the entire trench 823. It is noted that the protective material 825 may cover the sidewalls of the die 810 and the bottom of the trench 823.

[0054] In one aspect, the upper surface of the protective material 825 can be coplanar with the upper surface of the die 810. For example, during the filling process, the trench 823 can be overfilled with the protective material 825 such that a portion of the protective material 825 is above the upper surface of the die 810 (not shown). In this case, the protective material 825 can be planarized after filling the trench 823 so that the upper surface of the protective material 825 and the upper surface of the die 810 are coplanar.

[0055] Fig.8DThe stage is illustrated in which wafer 800 may be back ground. That is, the back side of wafer 800 may be ground. Wafer 800 may be back ground until its thickness reaches T(d) which is the thickness of die 810. In one aspect, protective material 825 may be used as a back grinding stop layer.

[0056] Fig. 8E The stage in which the wafer 800 can be cut into individual tube cores 810 is illustrated. A variety of cutting techniques can be used (e.g., mechanical cutting, laser cutting, plasma cutting, etc.). Specifically, the protective material 825 can be cut. In one aspect, it is preferred that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cutting is completed, not all of the protective material 825 is removed. The overhangs on both sides of the cut (remaining protective material 825) become part of the protective layer. In this case, the remaining protective material 825 becomes the sidewall protective layer 822.

[0057] It should be noted that the protective material 825 is used to protect the tube core 810 from breaking and cracking when the wafer 800 is cut. The tube core 810 can be brittle, and therefore if the tube core is not protected, the tube core can be broken and / or cracked during the cutting process. In one aspect, the protective material 825 (and therefore the protective layer produced therefrom) can be a material that is less brittle than the tube core 810 itself. Specifically, the protective material 825 can be less brittle than the edge portion and / or corner portion of the tube core 810. In this way, the protective material 825 can protect the tube core 810 during the cutting process and can also be used to prevent the fragments from spreading after cutting (for example, during operation when the tube core 810 may be subjected to thermal and / or mechanical stress).

[0058] 9A to 9E The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to FIG. 4A to FIG. 4B The device 400 illustrated in FIG. 4 includes a die 410 having a protection layer 420 (including a sidewall protection layer 422 ).

[0059] Fig.9A The stage after front-end processing in which a wafer 900 including a plurality of dies 910 is produced is illustrated. The dies 910 may be semiconductor dies. T(w) represents the thickness of the wafer 900. Scribe areas 915 may be between adjacent dies 910 in the wafer 900. Fig.9A Can be similar to Fig. 8A Therefore, the above Fig. 8A The discussion can be applied to Fig.9A .

[0060] Fig. 9BA stage is illustrated in which trenches 923 may be formed, for example, by front etching, in the scribe area 915 on the front side of the wafer 900. T(d) represents the depth of the trench. In one aspect, T(d) may be at least the thickness of the die 910. The trenches 923 may expose the sidewalls of the die 910. Fig. 9B Can be similar to Figure 8B Therefore, the above Figure 8B The discussion can be applied to Fig. 9B .

[0061] Fig. 9C The embodiment of the present invention illustrates a stage in which the trench 923 may be filled with a protective material 925. The protective material 925 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. In this case, the protective material 925 does not need to fill the entire trench 923, which is different from Figure 8C However, similar to Figure 8C , the protective material 925 can cover the sidewalls of the tube core 910 and the bottom of the trench 923. Figure 8C Other aspects of the discussion may apply to Fig. 9C .

[0062] In one aspect, the upper surface of protective material 925 can be coplanar with the upper surface of die 910. For example, during the filling process, trench 923 can be overfilled with protective material 925 such that an outer portion of protective material 925 is above the upper surface of die 910 (not shown). In this case, protective material 925 can be planarized after filling trench 923 so that the upper surfaces of protective material 925 and die 910 are coplanar.

[0063] Fig.9D 900 can be back ground. Wafer 900 can be back ground until its thickness reaches T(d) which is the thickness of die 910. In one aspect, protective material 925 can be used as a back grinding stop layer. In addition to the shape of protective material 925, Fig.9D Can be similar to Fig.8D Therefore, the above Fig.8D The discussion can be applied to Fig.9D .

[0064] Fig.9EThe stage in which the wafer 900 can be cut into individual dies 910 is illustrated. Specifically, the protective material 925 can be cut. Likewise, it is preferred that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cut is completed, the middle of the "U" portion of the protective material 925 can be removed. However, the overhangs (remaining protective material 925) on both sides of the cut become part of the protective layer such as the sidewall protective layer 922. Fig.9E Can be similar to Fig. 8E Therefore, the above Fig. 8E The discussion can be applied to Fig.9E .

[0065] The protective material 925 can be used to protect the die 910 from chipping and cracking when the wafer 900 is cut. In one aspect, the protective material 925 (and thus the protective layer produced thereby) can be a material that is less brittle than the die 910 itself. In particular, the protective material 925 can be less brittle than edge portions and / or corner portions of the die 910 for the reasons discussed above.

[0066] FIG. 10A to FIG. 10E The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to FIG. 5A to FIG. 5C The device 500 illustrated in FIG. 5 includes a die 510 having a protection layer 520 (including a sidewall protection layer 522 and an upper edge protection layer 524 ).

[0067] Fig. 10A The stage after the front-end processing in which the wafer 1000 including the plurality of dies 1010 is produced is illustrated. The dies 1010 may be semiconductor dies. T(w) represents the thickness of the wafer 1000. The scribe line regions 1015 may be between adjacent dies 1010 in the wafer 1000. Fig. 10A Can be similar to Fig. 8A Therefore, the above Fig. 8A The discussion can be applied to Fig. 10A .

[0068] Fig. 10B A stage is illustrated in which trenches 1023 may be formed in the scribe area 1015 on the front side of the wafer 1000, for example by front etching. T(d) represents the depth of the trench. In one aspect, T(d) may be at least the thickness of the die 1010. The trenches 1023 may expose the sidewalls of the die 1010. Fig. 10B Can be similar to Figure 8B Therefore, the above Figure 8B The discussion can be applied to Fig. 10B .

[0069] Fig. 10CIllustrated is a stage where the trench 1023 may be filled with a protective material 1025. The protective material 1025 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof.

[0070] In this case, trench 1023 may be intentionally overfilled with protection material 1025 such that protection material 1025 is mushroom-shaped (also referred to as T-shaped) with a portion of protection material 1025 being above the upper surface of die 1010 .

[0071] Fig. 10D 1000 may be back ground. Wafer 1000 may be back ground until its thickness reaches T(d) which is the thickness of die 1010. In one aspect, protective material 1025 may be used as a back grinding stop layer. In addition to the shape of protective material 1025, Fig. 10D Can be similar to Fig.8D Therefore, the above Fig.8D The discussion can be applied to Fig. 10D .

[0072] Fig. 10E The stage in which the wafer 1000 can be cut into individual dies 1010 is illustrated. Specifically, the protective material 1025 can be cut. Also, it may be preferred that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cut is completed, the middle of the protective material 1025 may be removed. However, the overhangs (remaining protective material 1025) on both sides of the cut may become part of the protective layer including the sidewall protective layer 1022 and the upper edge protective layer 1024. In addition to the shape of the resulting protective layer, Fig. 10E Can be similar to Fig. 8E Therefore, the above Fig. 8E The discussion can be applied to Fig. 10E .

[0073] FIG. 11A to FIG. 11F The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to FIG. 6A to FIG. 6C The device 600 illustrated in FIG. 6 includes a die 610 having a protection layer 620 (including a sidewall protection layer 622 and a lower surface protection layer 626 ).

[0074] Fig.11A The stage after the front-end processing in which a wafer 1100 including a plurality of dies 1110 is produced is illustrated. The dies 1110 may be semiconductor dies. T(w) represents the thickness of the wafer 1100. Scribe areas 1115 may be between adjacent dies 1110 in the wafer 1100. Fig.11ACan be similar to Fig. 8A Therefore, the above Fig. 8A The discussion can be applied to Fig.11A .

[0075] Fig. 11B A stage is illustrated in which trenches 1123 may be formed in the scribe area 1115 on the front side of the wafer 1100, for example, by front etching. T(d) represents the depth of the trench. In one aspect, T(d) may be at least the thickness of the die 1110. The trenches 1123 may expose the sidewalls of the die 1110. Fig. 11B Can be similar to Figure 8B Therefore, the above Figure 8B The discussion can be applied to Fig. 11B .

[0076] Fig. 11C Illustrated is a stage where trench 1123 may be filled with protective material 1125. Protective material 1125 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. Fig. 11C Can be similar to Figure 8C Therefore, the above Figure 8C The discussion can be applied to Fig. 11C .

[0077] In one aspect, the upper surface of protective material 1125 can be coplanar with the upper surface of die 1110. For example, during the filling process, trench 1123 can be overfilled with protective material 1125 such that an outer portion of protective material 1125 is above the upper surface of die 1110 (not shown). Protective material 1125 can be planarized after filling trench 1123 such that protective material 1125 and the upper surface of die 1110 are coplanar.

[0078] Fig.11D Illustrated is a stage where wafer 1100 may be back ground. Wafer 1100 may be back ground until its thickness reaches T(d) which is the thickness of die 1110. In one aspect, protective material 1125 may serve as a back grinding stop layer. Fig.11D Can be similar to Fig.8D Therefore, the above Fig.8D The discussion can be applied to Fig.11D .

[0079] Fig.11EThe stage where additional protective material 1127 may be applied to the lower surface of wafer 1100 after back grinding of wafer 1100 is illustrated. Protective material 1125 and additional protective material 1127 may be the same. Alternatively, they may be different. In one example, additional protective material 1127 may be metal to serve as backside via contacts when wafer 1100 is cut into individual dies.

[0080] Fig.11F The stage in which the wafer 1100 can be cut into individual dies 1110 is illustrated. Specifically, the protective material 1125 and the additional protective material 1127 can be cut. Also, it is preferable that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cut is completed, the middle of the protective material 1125 can be removed. However, the overhangs (remaining protective material 1125) on both sides of the cut can become part of the protective layer including the sidewall protective layer 1122 and the lower surface protective layer 1126. In addition to the shape of the resulting protective layer, Fig.11F Can be similar to Fig. 8E Therefore, the above Fig. 8E The discussion can be applied to Fig.11F .

[0081] FIG. 12A to FIG. 12E The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to 7A to 7C The device 700 illustrated in FIG. 7 includes a die 710 having a protection layer 720 (including an upper sidewall protection layer 728 and a lower sidewall protection layer 729 ).

[0082] Fig. 12A The stage after the front-end processing in which the wafer 1200 including the plurality of dies 1210 is produced is illustrated. The dies 1210 may be semiconductor dies. T(w) represents the thickness of the wafer 1200. The scribe line regions 1215 may be between adjacent dies 1210 in the wafer 1200. Fig. 12A Can be similar to Fig. 8A Therefore, the above Fig. 8A The discussion can be applied to Fig. 12A .

[0083] Fig. 12B Illustrated is a stage in which wafer 1200 may be back ground. Wafer 1200 may be back ground until its thickness reaches T(d), which is the thickness of die 1210.

[0084] Fig. 12CThe stage in which the upper edge groove 1216 and the lower edge groove 1217 may be formed is illustrated. The upper edge groove 1216 may be formed, for example, by front etching, in the scribe area 1215 on the front side of the wafer 1200. The upper edge groove 1216 may expose the upper portion of all the side walls of the tube core 1210. The lower edge groove 1217 may be formed, for example, by back etching, in the scribe area 1215 on the back side of the wafer 1200. The lower edge groove 1217 may expose the lower portion of all the side walls of the tube core 1210.

[0085] In one aspect, the upper surface of the first protection material 1218 can be coplanar with the upper surface of the die 1210. For example, during the filling process, the upper edge groove 1216 can be overfilled with the first protection material 1218 such that a portion of the first protection material 1218 is above the upper surface of the die 1210 (not shown). The first protection material 1218 can be planarized after filling the upper edge groove 1216 so that the upper surfaces of the first protection material 1218 and the die 1210 are coplanar.

[0086] Alternatively or in addition, the lower surface of the second protective material 1219 can be coplanar with the lower surface of the tube core 1210. For example, during the filling process, the lower edge groove 1217 can be overfilled with the second protective material 1219, so that a portion of the second protective material 1219 is lower than the lower surface of the tube core 1210 (not shown). The second protective material 1219 can be planarized after filling the lower edge groove 1217 so that the lower surface of the second protective material 1219 and the tube core 1210 are coplanar.

[0087] Fig.12D A stage is illustrated in which the upper edge groove 1216 may be filled with a first protective material 1218 and the lower edge groove 1217 may be filled with a second protective material 1219. The first protective material 1218 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. The second protective material 1219 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. The first protective material 1218 and the second protective material 1219 may be the same material. Alternatively, they may be different materials.

[0088] Fig.12EThe stage in which the wafer 1200 can be cut into individual dies 1210 is illustrated. In this case, the scribe area material can be cut. It is preferred that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cutting is completed, the scribe area material can be removed, but the first protective material 1218 and the second protective material 1219 can be retained to form the upper sidewall protective layer 1228 and the lower sidewall protective layer 1229.

[0089] FIG. 13A to FIG. 13E The stages of manufacturing a device according to one or more aspects of the present disclosure are illustrated. In one aspect, the manufactured device may be similar to FIG. 4A to FIG. 4B The device 400 illustrated in FIG. 4 includes a die 410 having a protection layer 420 (including a sidewall protection layer 422 ).

[0090] Fig.13A The stage after the front-end processing in which the wafer 1300 including the plurality of dies 1310 is produced is illustrated. The dies 1310 may be semiconductor dies. T(w) represents the thickness of the wafer 1300. The scribe line regions 1315 may be between adjacent dies 1310 in the wafer 1300. Fig.13A Can be similar to Fig. 8A Therefore, the above Fig. 8A The discussion can be applied to Fig.13A .

[0091] Fig. 13B The stage is illustrated in which edge grooves 1329 may be formed in the scribe area 1315 on the front side of the wafer 1300, for example, by front etching. T(d) represents the depth of the groove. In one aspect, T(d) may be at least the thickness of the tube core 1310. The edge grooves 1329 may be adjacent to each tube core 1310 and expose the sidewalls of the tube core 1310. The width of each edge groove 1329 may be less than the width W(s) of the scribe area 1315.

[0092] Fig. 13C The stage in which the edge grooves 1329 may be filled with the protective material 1325 is illustrated. The protective material 1325 may include one or more passivation materials (e.g., oxides, nitrides, etc.) or one or more metals (e.g., titanium (Ti), chromium (Cr), gold (Au), etc.) or any combination thereof. In this case, the protective material 1325 may fill the entirety of each edge groove 1329. The protective material 1325 may cover the sidewalls of the tube core 1310.

[0093] In one aspect, the upper surface of protective material 1325 can be coplanar with the upper surface of die 1310. For example, during the filling process, edge groove 1329 can be overfilled with protective material 1325 such that a portion of protective material 1325 is above the upper surface of die 1310 (not shown). In this case, protective material 1325 can be planarized after filling edge groove 1329 so that the upper surfaces of protective material 1325 and die 1310 are coplanar.

[0094] Fig.13D 13. The wafer 1300 may be back ground at a stage where it can be back ground. Wafer 1300 may be back ground until its thickness reaches T(d), which is the thickness of die 1310. In one aspect, protective material 1325 may be used as a back grinding stop layer. In addition to the shape of protective material 1325, Fig.13D Can be similar to Fig.8D Therefore, the above Fig.8D The discussion can be applied to Fig.13D .

[0095] Fig.13E The stage in which the wafer 1300 can be cut into individual dies 1310 is illustrated. Specifically, the protective material 1325 can be cut. Likewise, it may be preferred that the width W(s) of the scribe area is wider than the width of the cut. Then, when the cut is completed, the scribe area material can be removed, but the protective material 1325 can remain to form a sidewall protection layer 1322. Fig.13E Can be similar to Fig. 8E Therefore, the above Fig. 8E The discussion can be applied to Fig.13E .

[0096] Fig.14 A flow chart illustrating an example method 1400 of manufacturing a device (e.g., device 300, 400, 500, 600, 700, etc.) according to one or more aspects of the present disclosure is shown. In block 1410, a die (e.g., die 310, 410, 510, 610, 710) may be provided. In one aspect, method 1400 may be considered part of a back-end process (i.e., a process performed after a wafer is manufactured).

[0097] In block 1420, a protective layer (e.g., protective layer 320, 420, 520, 620, 720) may be formed on the sidewalls of the die. The protective layer may surround all sidewalls of the die. The protective layer may be formed of various materials (e.g., one or more oxides, one or more nitrides, one or more metals, or any combination thereof).

[0098] Fig.15 A flowchart of an example process for implementing blocks 1410 and 1420 is illustrated. In one aspect, Fig.15 The flowchart can be applied to at least FIG. 8A to FIG. 8E , 9A to 9E , FIG. 10A to FIG. 10E , FIG. 11A to FIG. 11D , FIG. 13A to FIG. 13E The stages illustrated in FIG. 4 are used to form devices 400 , 500 , 600 .

[0099] In block 1510, trenches may be etched in scribe areas (e.g., scribe areas 815, 915, 1015, 1115, 1315) of a wafer (e.g., wafers 800, 900, 1000, 1100, 1300) (e.g., see FIG. 1 ). Figure 8B , Fig. 9B , Fig. 10B , Fig. 11B , Fig. 13B ). The groove (eg, groove 823, 923, 1023, 1123, edge groove 1323) may expose all sidewalls of the die (eg, die 810, 910, 1010, 1110, 1310). The depth of the groove may be equal to or greater than the thickness T(d) of the die.

[0100] In block 1520, the trench may be filled with a protective material (eg, see Figure 8C , Fig. 9C , Fig. 10C , Fig. 11C , Fig. 13C ). The protective material (e.g., protective material 825, 925, 1025, 1125, 1325) can cover the sidewalls of the die. The protective material can also cover at least a portion of the bottom of the trench. In one aspect, the trench can be fully filled with the protective material (e.g., see Figure 8C , Fig. 11C , Fig. 13C ). In another aspect, the trench may be filled such that the cross-section of the protective material is U-shaped to cover the sidewalls of the die and the bottom of the trench (see, for example, Fig. 9C In yet another aspect, the trench can be overfilled to be above the upper surface of the die. For example, the trench can be overfilled with a protective material, such as in a mushroom shape on the upper surface of the die (see, for example, Fig. 10C ).

[0101] In block 1525, the protective material may be planarized so that an upper surface of the protective material is coplanar with an upper surface of the die (eg, see Figure 8C , Fig. 9C , Fig. 11C , Fig. 13C ). For example, if the trench is overfilled, the excess protective material can be planarized.

[0102] Note that block 1525 is optional, as indicated by the dashed rectangle. That is, block 1525 need not be performed. For example, the trench may be intentionally overfilled with a protective material and not planarized (e.g., see Fig. 10C ).

[0103] In block 1530, the wafer may be back ground (see, e.g., Fig.8D , Fig.9D , Fig. 10D , Fig.11D , Fig.13D ). When the thickness of the wafer is reduced to T(d), i.e., to the thickness of the die, back grinding can be stopped. In one aspect, if the depth of the trench is T(d), the protective material can be used as a back grinding stop layer. In one aspect, block 1530 can be performed after block 1525 or after 1520 if planarization has not occurred.

[0104] In block 1535, additional protective material (eg, additional protective material 1127) may be applied to the lower surface of the wafer (eg, see Fig.11E ). Block 1535 may also be optional (as indicated by the dashed rectangle). Although not shown, it should be noted that block 1535 may be performed in conjunction with other processes (e.g., in Fig.9D and Fig.9E between the stages Fig. 10D and Fig. 10E between the stages Fig.13D and Fig.13E If performed, block 1035 may occur after block 1530.

[0105] In block 1540, the wafer may be cut along the scribe line regions (eg, see Fig. 8E , Fig.9E , Fig. 10E , Fig.11F , Fig.13E ). A protection layer (e.g., protection layer 420, 520, 620) may be formed after cutting to protect the die. For example, various combinations of sidewall protection layers (e.g., sidewall protection layers 822, 922, 1022, 1122, 1322), upper edge protection layers (e.g., upper edge protection layer 1024), and lower surface protection layers (e.g., lower surface protection layer 1126) may be formed after cutting.

[0106] Fig.16 A flowchart of another example process for implementing blocks 1410 and 1420 is illustrated. In one aspect, Fig.16 The flowchart can be applied to at least FIG. 12A to FIG. 12E The stages illustrated in FIG. 7 are used to form device 700 .

[0107] In block 1610, the wafer may be back ground (eg, see Fig. 12B When the thickness of the wafer (eg, wafer 1200 ) is reduced to T(d), that is, reduced to the thickness of the die (eg, die 1210 ), the back grinding may be stopped.

[0108] In block 1620, an upper edge groove may be formed (eg, see Fig. 12C ). An upper edge groove (eg, upper edge groove 1216) may expose upper portions of all sidewalls of the die.

[0109] In block 1630, an upper sidewall protection layer (eg, upper sidewall protection layer 1228) may be formed by filling the upper edge groove with a first protection material (eg, first protection material 1218) (eg, see Fig.12D ). The upper sidewall protection layer may surround the upper portion of all sidewalls of the tube core.

[0110] In block 1635, the first protective material may be planarized after filling the upper edge groove so that the upper surface of the first protective material is coplanar with the upper surface of the die (eg, see Fig.12D ). For example, if the upper edge groove is overfilled, the excess first protective material may be planarized.

[0111] Note that block 1625 is optional, as indicated by the dashed rectangle. That is, block 1625 does not need to be performed. For example, the upper edge groove may be intentionally overfilled with the first protective material and not planarized (not shown). In this way, an upper edge protection layer (similar to upper edge protection layer 1024 of FIG. 10 ) may be formed.

[0112] In block 1640, a lower edge groove may be formed (eg, see Fig. 12C ). A lower edge groove (eg, lower edge groove 1217) can expose a lower portion of all sidewalls of the die. In one aspect, block 1640 can be subsequent to block 1610.

[0113] In block 1650, a lower sidewall protection layer (eg, lower sidewall protection layer 1229) may be formed by filling the lower edge groove with a second protection material (eg, second protection material 1219) (eg, see Fig.12D ). The lower sidewall protection layer may surround the lower portion of all sidewalls of the tube core. In one aspect, the first protection material and the second protection material may be the same. Alternatively, they may be different.

[0114] In block 1655, the second protective material may be planarized after filling the lower edge groove so that the lower surface of the second protective material is coplanar with the lower surface of the die (eg, see Fig.12D ). For example, if the lower edge groove is overfilled, the excess second protective material may be planarized.

[0115] Note that block 1655 is optional, as indicated by the dashed rectangle. That is, block 1625 does not need to be performed. For example, additional protective material (similar to additional protective material 1127) may be applied to the lower surface of the wafer to produce a lower surface protective layer (similar to lower surface protective layer 1126) (not shown). In this case, there is no need to remove excess additional protective material.

[0116] In block 1660, the wafer may be cut along the scribe line regions (eg, see Fig.12E ). A protection layer may be formed after cutting to protect the die. For example, various combinations of sidewall protection layers (e.g., sidewall protection layers 822, 922, 1022, 1122, 1322), upper edge protection layers (e.g., upper edge protection layer 1024), and lower surface protection layers (e.g., lower surface protection layer 1126) may be formed after cutting.

[0117] A protection layer (eg, protection layer 720) may be formed after sawing to protect the die. For example, an upper sidewall protection layer (eg, upper sidewall protection layer 1228) and a lower sidewall protection layer (eg, lower sidewall protection layer 1229) may be formed after sawing.

[0118] Fig.17 Various electronic devices 1700 are illustrated that may be integrated with any of the aforementioned devices according to various aspects of the present disclosure. For example, a mobile phone device 1702, a laptop device 1704, and a fixed location terminal device 1706 may each be generally considered as a user equipment (UE) and may include one or more devices as described herein (e.g., devices 300, 400, 500, 600, 700). Fig.17 The devices 1702, 1704, 1706 illustrated in the figure are merely exemplary. Other electronic devices may also include the described devices, including but not limited to a group of devices (e.g., electronic devices) including: mobile devices, handheld personal communication system (PCS) units, portable data units (such as personal digital assistants), devices enabled with global positioning systems (GPS), navigation devices, set-top boxes, music players, video players, entertainment units, fixed location data units (such as meter reading equipment), communication devices, smart phones, tablet computers, computers, wearable devices, servers, routers, electronic devices implemented in motor vehicles (e.g., autonomous vehicles), Internet of Things (IoT) devices, or any other devices that store or retrieve data or computer instructions, or any combination thereof.

[0119] The devices and functionality disclosed above may be designed and configured in computer files (e.g., RTL, GDSII, GERBER, etc.) stored on a computer readable medium. Some or all of such files may be provided to a manufacturing processor that manufactures devices based on such files. The resulting products may include semiconductor wafers that are subsequently cut into semiconductor dies and packaged into glass antenna devices. The glass antenna devices may then be used in the devices described herein.

[0120] Specific implementation examples are described in the following numbered clauses:

[0121] Item 1: A device comprising: a die; and a protection layer formed on sidewalls of the die, the protection layer surrounding all sidewalls of the die.

[0122] Clause 2: The device of clause 1, wherein the material of the protective layer is less brittle than the material of the edge portion of the die.

[0123] Clause 3: The device of any one of clauses 1 to 2, wherein the protective layer is formed of one or more oxides, one or more nitrides, one or more metals, or any combination thereof.

[0124] Clause 4: The device of any one of clauses 1 to 3, wherein the protection layer comprises: a sidewall protection layer surrounding all sidewalls of the die, the sidewall protection layer covering the entire vertical height of the sidewalls of the die.

[0125] Clause 5: The device of Clause 4, wherein the protection layer further comprises: an upper edge protection layer formed on one or more upper edge portions of the die and on an upper surface of the sidewall protection layer.

[0126] Clause 6: The device of clause 5, wherein the upper edge protection layer is formed on all upper edge portions of the die, and all upper edges and corners of the die are covered by the protection layer.

[0127] Clause 7: The device of any one of clauses 5 to 6, wherein the sidewall protection layer and the upper edge protection layer are formed of the same material.

[0128] Clause 8: The device of any one of clauses 1 to 7, wherein the protection layer further comprises: a lower surface protection layer formed on a lower surface of the die and a lower surface of the sidewall protection layer.

[0129] Clause 9: The device of clause 8, wherein the lower surface protection layer covers the entire lower surface of the tube die, and all lower edges and lower corners of the tube die are covered by the protection layer.

[0130] Clause 10: The device according to any one of clauses 8 to 9, wherein the sidewall protection layer and the lower surface protection layer are formed of the same material.

[0131] Clause 11: The device of any of clauses 8 to 10, wherein the lower surface protection layer is formed of one or more metals and is configured as a backside via contact.

[0132] Clause 12: A device according to any one of clauses 1 to 3, wherein the protection layer includes: an upper sidewall protection layer, the upper sidewall protection layer surrounding the upper portion of all sidewalls of the tube core; and a lower sidewall protection layer, the lower sidewall protection layer surrounding the lower portion of all sidewalls of the tube core.

[0133] Clause 13: The device of clause 12, wherein an upper surface of the upper sidewall protection layer is coplanar with an upper surface of the die, or wherein a lower surface of the lower sidewall protection layer is coplanar with a lower surface of the die, or both.

[0134] Clause 14: The device of any one of clauses 12 to 13, wherein the upper sidewall protection layer and the lower sidewall protection layer are formed of the same material.

[0135] Clause 15: A device according to any one of clauses 1 to 14, wherein the device is incorporated into an apparatus selected from the group consisting of: a music player, a video player, an entertainment unit, a navigation device, a communication device, a mobile device, a mobile phone, a smart phone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, an Internet of Things (IoT) device, a laptop computer, a server, and a device in a motor vehicle.

[0136] Clause 16: A method of manufacturing a device, the method comprising: providing a die; and forming a protection layer on sidewalls of the die, the protection layer surrounding all sidewalls of the die.

[0137] Clause 17: The method of Clause 16, wherein the protective layer is formed of one or more oxides, one or more nitrides, one or more metals, or any combination thereof.

[0138] Clause 18: A method according to any one of clauses 16 to 17, wherein providing the die and forming the protective layer comprises: etching a groove in a scribe area of ​​a wafer comprising a plurality of dies, the plurality of dies including the die, the groove exposing all sidewalls of the die; filling the groove with a protective material covering the sidewalls of the die and at least a portion of the bottom of the groove; back grinding the wafer after filling the groove; and after back grinding the wafer, cutting the wafer along the scribe area, wherein the protective layer is formed by the protective material.

[0139] Clause 19: The method of clause 18, wherein a depth of the trench is equal to or greater than a thickness of the die.

[0140] Clause 20: The method of any of clauses 18 to 19, wherein back grinding the wafer is stopped when the thickness of the wafer reaches the thickness of the die.

[0141] Clause 21: The method of any one of clauses 18 to 20, wherein the protective material is used as a back grinding stop layer when back grinding the wafer.

[0142] Clause 22: A method according to any one of clauses 18 to 21, wherein providing the tube core and forming the protective layer further comprises: planarizing the protective material, the upper surface of the protective material being coplanar with the upper surface of the tube core, wherein the protective material is planarized after filling the groove and before cutting the wafer, and wherein a sidewall protection layer of the protective layer is formed after cutting the wafer, the sidewall protection layer surrounding all sidewalls of the tube core and covering the entire vertical height of the sidewalls of the tube core.

[0143] Clause 23: The method of any one of clauses 18 to 22, wherein the trench is substantially filled with the protective material.

[0144] Clause 24: The method of any of clauses 18 to 22, wherein the trench is filled such that a cross-section of the protection material is U-shaped to cover the sidewalls of the die and a bottom of the trench.

[0145] Clause 25: A method according to any one of clauses 18 to 21, wherein the groove is overfilled into a mushroom shape above the upper surface of the tube core, so that after cutting the wafer, the protective layer includes: a sidewall protection layer, which surrounds all side walls of the tube core and covers the entire vertical height of the side walls of the tube core; and an upper edge protection layer, which is formed on all upper edge portions of the tube core and on the upper surface of the sidewall protection layer, wherein all upper edges and corners of the tube core are covered by the protective layer.

[0146] Clause 26: A method according to any one of clauses 18 to 25, wherein providing the tube core and forming the protective layer further comprises: applying additional protective material on the lower surface of the wafer after back grinding the wafer and before cutting the wafer, wherein after the wafer is cut, the protective layer comprises: a sidewall protective layer, the sidewall protective layer surrounds all side walls of the tube core and covers the entire vertical height of the side walls of the tube core; and a lower surface protective layer, the lower surface protective layer is formed on the lower surface of the tube core and on the lower surface of the sidewall protective layer, the lower surface protective layer covers the entire lower surface of the tube core.

[0147] Clause 27: The method of any of clauses 18 to 26, wherein the trench is an edge recess adjacent to the sidewall of the die, the edge recess having a width less than a width of the scribe area.

[0148] Clause 28: A method according to any one of clauses 16 to 17, wherein providing the tube core and forming the protective layer include: back grinding the wafer; and forming an upper edge groove exposing the upper portion of all side walls of the tube core; forming an upper sidewall protective layer surrounding the upper portion of all side walls of the tube core by filling the upper edge groove with a first protective material; forming a lower edge groove after back grinding the wafer, wherein the lower edge groove exposes the upper portion of all side walls of the tube core; forming a lower sidewall protective layer surrounding the lower portion of all side walls of the tube core by filling the lower edge groove with a second protective material; after forming the lower sidewall protective layer, cutting the wafer along the scribe line area, wherein the protective layer includes the upper sidewall protective layer and the lower sidewall protective layer.

[0149] Clause 29: The method of any one of clauses 28 and clauses 25 to 28, wherein an upper surface of the upper sidewall protection layer is coplanar with an upper surface of the die, or wherein a lower surface of the lower sidewall protection layer is coplanar with a lower surface of the die, or both.

[0150] Clause 30: The method of any one of clauses 28 to 29, wherein the first protective material and the second protective material are the same.

[0151] As used herein, the terms "user equipment" (or "UE"), "user device", "user terminal", "client device", "communication device", "wireless device", "wireless communication device", "handheld device", "mobile device", "mobile terminal", "mobile station", "handset", "access terminal", "subscriber device", "subscriber terminal", "subscriber station", "terminal" and variations thereof may interchangeably refer to any suitable mobile or stationary device capable of receiving wireless communications and / or navigation signals. These terms include, but are not limited to, music players, video players, entertainment units, navigation devices, communication devices, smart phones, personal digital assistants, fixed location terminals, tablet computers, computers, wearable devices, laptop computers, servers, onboard devices in motor vehicles, and / or other types of portable electronic devices that are typically carried by an individual and / or have communication capabilities (e.g., wireless, cellular, infrared, short-range radio, etc.). These terms are also intended to include a device that communicates with another device that is capable of receiving wireless communications and / or navigation signals (such as through a short-range wireless, infrared, wired connection or other connection), regardless of whether satellite signal reception, assistance data reception and / or positioning-related processing occurs at the device or at the other device. In addition, these terms are intended to include all devices, including wireless and wired communication devices, which can communicate with the core network via a radio access network (RAN), and through the core network, the UE can connect to external networks such as the Internet and other UEs. Of course, other mechanisms for connecting to the core network and / or the Internet are also possible for the UE, such as through a wired access network, a wireless local area network (WLAN) (e.g., based on IEEE 802.11, etc.). The UE can be implemented by any of several types of devices, including but not limited to a printed circuit (PC) card, a compact flash device, an external or internal modem, a wireless or wired phone, a smart phone, a tablet device, a tracking device, an asset tag, etc. The communication link through which the UE can transmit signals to the RAN is called an uplink channel (e.g., a reverse traffic channel, a reverse control channel, an access channel, etc.). The communication link through which the RAN can transmit signals to the UE is called a downlink or forward link channel (e.g., a paging channel, a control channel, a broadcast channel, a forward traffic channel, etc.). As used herein, the term "traffic channel (TCH)" may refer to an uplink / reverse traffic channel or a downlink / forward traffic channel.

[0152] Wireless communication between electronic devices may be based on different technologies, such as code division multiple access (CDMA), W-CDMA, time division multiple access (TDMA), frequency division multiple access (FDMA), orthogonal frequency division multiplexing (OFDM), global system for mobile communications (GSM), 3GPP long term evolution (LTE), 5G new radio, Bluetooth (BT), Bluetooth low energy (BLE), IEEE 802.11 (WiFi) and IEEE 802.15.4 (Zigbee / Thread) or other protocols that may be used in wireless communication networks or data communication networks. Bluetooth low energy (also known as Bluetooth LE, BLE and Bluetooth Smart) is a wireless personal area network technology designed and marketed by the Bluetooth Technology Alliance that aims to provide significantly reduced power consumption and cost while maintaining a similar communication range. BLE was merged into the main Bluetooth standard in 2010, with the adoption of Bluetooth Core Specification Version 4.0 and updated in Bluetooth 5.

[0153] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any detail described herein as "exemplary" is not to be construed as trumping other examples. Likewise, the term "example" does not imply that all examples include the discussed features, advantages, or modes of operation. Furthermore, particular features and / or structures may be combined with one or more other features and / or structures. Furthermore, at least a portion of the apparatus described herein may be configured to perform at least a portion of the methods described herein.

[0154] It should be noted that the terms "connected", "coupled" or any variations thereof mean any connection or coupling, direct or indirect, between elements, and may encompass the presence of intermediate elements between two elements via which the two elements are "connected" or "coupled" together, unless the connection is explicitly disclosed as a direct connection.

[0155] Any reference to an element using designations such as "first," "second," etc. herein does not limit the quantity and / or order of those elements. Instead, these designations are used as a convenient method of distinguishing two or more elements and / or element instances. Furthermore, unless otherwise stated, a set of elements may include one or more elements.

[0156] Those skilled in the art will appreciate that information and signals may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0157] Nothing described or illustrated in this application is intended to confer upon the public any component, act, feature, benefit, advantage, or equivalent, regardless of whether such component, act, feature, benefit, advantage, or equivalent is recited in the claims.

[0158] In the above specific embodiments, it can be seen that different features are grouped together in each example. This disclosure should not be understood as reflecting the intention that the examples claimed for protection have more features than the features explicitly mentioned in the corresponding claims. On the contrary, the present disclosure may include less than all the features of the disclosed examples. Therefore, the attached claims should be considered to be incorporated into this specification, wherein each claim itself may be a separate example. Although each claim itself may be a separate example, it should be noted that although the dependent claims in the claims may be cited in a specific combination with one or more claims, other examples may also cover or include a combination of the subject matter of the dependent claim with any other dependent claim or any feature with other dependent and independent claims. Such combinations are proposed herein unless it is explicitly expressed that a specific combination is not intended to be used. In addition, it is also intended that the features of the claims may be included in any other independent claim, even if the claim is not directly subordinate to the independent claim.

[0159] It should also be noted that the methods, systems and apparatuses disclosed in the description or claims may be implemented by devices including means for performing the corresponding actions and / or functionalities of the disclosed methods.

[0160] In addition, in some examples, a single action may be subdivided into or include one or more sub-actions. Such sub-actions may be included in and may be part of the disclosure of the individual action.

[0161] Although the foregoing disclosure shows illustrative examples of the present disclosure, it should be noted that various changes and modifications may be made therein without departing from the scope of the present disclosure as defined in the appended claims. The functions and / or actions in the method claims of each example of the present disclosure described herein do not necessarily have to be performed in any particular order. In addition, well-known elements will not be described in detail or may be omitted to avoid blurring the relevant details of the various aspects and examples disclosed herein. In addition, although the elements of the present disclosure may be described or claimed in the singular, plural forms may also be considered unless explicitly stated to be limited to the singular.

Claims

1. A device, comprising: Die; and A protection layer is formed on the sidewalls of the tube core, and the protection layer surrounds all the sidewalls of the tube core. 2 . The device of claim 1 , wherein the material of the protection layer is less brittle than the material of the edge portion of the die. 3 . The device according to claim 1 , wherein the protection layer is formed of one or more oxides, one or more nitrides, one or more metals, or any combination thereof.

4. The device according to claim 1, wherein the protective layer comprises: A sidewall protection layer surrounds all sidewalls of the tube core, and the sidewall protection layer covers the entire vertical height of the sidewalls of the tube core.

5. The device according to claim 4, wherein the protective layer further comprises: An upper edge protection layer is formed on one or more upper edge portions of the tube core and on an upper surface of the sidewall protection layer. 6 . The device according to claim 5 , wherein the upper edge protection layer is formed on all upper edge portions of the die, and all upper edges and corners of the die are covered by the protection layer. 7 . The device according to claim 5 , wherein the sidewall protection layer and the upper edge protection layer are formed of the same material.

8. The device according to claim 4, wherein the protective layer further comprises: A lower surface protection layer is formed on the lower surface of the tube core and the lower surface of the sidewall protection layer. 9 . The device according to claim 8 , wherein the lower surface protection layer covers the entire lower surface of the tube die, and all lower edges and lower corners of the tube die are covered by the protection layer. 10 . The device according to claim 8 , wherein the sidewall protection layer and the lower surface protection layer are formed of the same material. 11 . The device of claim 8 , wherein the lower surface protection layer is formed of one or more metals and is configured as a backside via contact.

12. The device according to claim 1, wherein the protective layer comprises: an upper sidewall protection layer, the upper sidewall protection layer surrounding the upper portion of all sidewalls of the tube core; and A lower sidewall protection layer surrounds lower portions of all sidewalls of the tube core.

13. The device according to claim 12, wherein the upper surface of the upper sidewall protection layer is coplanar with the upper surface of the tube core, or wherein the lower surface of the lower sidewall protection layer is coplanar with the lower surface of the tube core, or Both. 14 . The device according to claim 12 , wherein the upper sidewall protection layer and the lower sidewall protection layer are formed of the same material.

15. The device of claim 1, wherein the device is incorporated into an apparatus selected from the group consisting of: a music player, a video player, an entertainment unit, a navigation device, a communication device, a mobile device, a mobile phone, a smart phone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, an Internet of Things (IoT) device, a laptop computer, a server, and a device in a motor vehicle.

16. A method for manufacturing a device, the method comprising: Provide a tube die; as well as A protection layer is formed on the sidewalls of the tube core, and the protection layer surrounds all the sidewalls of the tube core. 17 . The method of claim 16 , wherein the protection layer is formed of one or more oxides, one or more nitrides, one or more metals, or any combination thereof.

18. The method of claim 16, wherein providing the die and forming the protection layer comprises: etching a trench in a scribe line region of a wafer including a plurality of dies, the plurality of dies including the die, the trench exposing all sidewalls of the die; filling the trench with a protective material covering at least a portion of the sidewalls of the die and a bottom of the trench; back grinding the wafer after filling the trench; as well as After back grinding the wafer, cutting the wafer along the scribe line area, The protective layer is formed of the protective material. The method of claim 18 , wherein a depth of the trench is equal to or greater than a thickness of the die.

20. The method of claim 19, wherein back grinding the wafer is stopped when the thickness of the wafer reaches the thickness of the die.

21. The method of claim 19, wherein the protective material is used as a back grinding stop layer when back grinding the wafer.

22. The method according to claim 18, wherein providing the die and forming the protection layer further comprises: planarizing the protective material, wherein the upper surface of the protective material is coplanar with the upper surface of the die, wherein the protective material is planarized after filling the trenches and before dicing the wafer, and A sidewall protection layer of the protection layer is formed after the wafer is cut, and the sidewall protection layer surrounds all sidewalls of the tube core and covers the entire vertical height of the sidewalls of the tube core.

23. The method of claim 18, wherein the trench is substantially filled with the protective material.

24. The method of claim 18, wherein the trench is filled such that a cross-section of the protection material is U-shaped to cover the sidewalls of the die and a bottom of the trench.

25. The method of claim 18, wherein the trench is overfilled in a mushroom shape above the upper surface of the die so that after dicing the wafer, the protection layer comprises: a sidewall protection layer, the sidewall protection layer surrounding all sidewalls of the tube core and covering the entire vertical height of the sidewalls of the tube core; and an upper edge protection layer, the upper edge protection layer being formed on all upper edge portions of the tube core and on the upper surface of the sidewall protection layer, All upper edges and corners of the tube core are covered by the protection layer.

26. The method according to claim 18, wherein providing the die and forming the protection layer further comprises: applying additional protective material on the lower surface of the wafer after back grinding the wafer and before dicing the wafer, in After the wafer is cut, the protective layer comprises: a sidewall protection layer, the sidewall protection layer surrounding all sidewalls of the tube core and covering the entire vertical height of the sidewalls of the tube core; and A lower surface protection layer is formed on the lower surface of the tube core and the lower surface of the sidewall protection layer, and the lower surface protection layer covers the entire lower surface of the tube core.

27. The method of claim 18, wherein the trench is an edge recess adjacent to the sidewall of the die, the edge recess having a width less than a width of the scribe line region.

28. The method of claim 16, wherein providing the die and forming the protective layer comprises: performing back grinding on the wafer; as well as forming an upper edge groove exposing upper portions of all sidewalls of the tube core; forming an upper sidewall protection layer surrounding upper portions of all sidewalls of the die by filling the upper edge groove with a first protection material; forming a lower edge groove after back grinding the wafer, the lower edge groove exposing upper portions of all sidewalls of the die; forming a lower sidewall protection layer surrounding a lower portion of all sidewalls of the die by filling the lower edge groove with a second protection material; After forming the lower sidewall protection layer, cutting the wafer along the scribe line area, The protection layer includes the upper sidewall protection layer and the lower sidewall protection layer.

29. The method according to claim 28, wherein the upper surface of the upper sidewall protection layer is coplanar with the upper surface of the tube core, or wherein the lower surface of the lower sidewall protection layer is coplanar with the lower surface of the tube core, or Both.

30. The method of claim 28, wherein the first protective material and the second protective material are the same.

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