Oxide film layer preparation method, light-emitting diode and manufacturing method of light-emitting diode

Abstract

The invention provides an oxide film layer preparation method, a light-emitting diode and a manufacturing method thereof, and belongs to the field of light-emitting devices. The method comprises the following steps: putting a substrate into an electron beam vacuum coating machine; oxygen ion hot air flow is introduced into the electron beam vacuum coating machine; and evaporating an oxide raw material of an evaporation source by using an electron beam, and forming an oxide film layer on the substrate. When the oxide film layer is manufactured, electron beams are adopted to evaporate oxide raw materials of an evaporation source to achieve film coating, and in the film coating process, oxygen ion hot airflow is introduced into an electron beam vacuum film coating machine. On one hand, the oxygen ion hot air flow can drive the evaporated oxide raw material to move in the electron beam vacuum coating machine, so that the evaporated oxide raw material is dispersed more uniformly, and the coating thickness is more uniform; on the other hand, oxygen ions can be combined with ions generated after the oxide raw material is evaporated, and the content of oxide in the oxide film layer is increased.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a method for preparing an oxide film layer, a light-emitting diode and a method for manufacturing the same. Background Art

[0002] Light-emitting diodes are semiconductor light-emitting devices that can be used in display, lighting and other display fields.

[0003] The related art provides a light emitting diode, which includes: an epitaxial structure, a dielectric layer, a silver reflective layer and a passivation layer, wherein the passivation layer is mainly formed by stacking oxide thin films.

[0004] During the manufacturing process, the oxide film is prepared by electron beam evaporation. However, the electron beam evaporation method of the related art easily causes the oxide film to be uneven, which affects the quality of the oxide film and further affects the light output efficiency of the light-emitting diode. Summary of the invention

[0005] The embodiments of the present disclosure provide a method for preparing an oxide film layer, a light-emitting diode and a method for manufacturing the same, which can improve the quality of the oxide film. The technical solution is as follows:

[0006] In one aspect, a method for preparing an oxide film layer is provided, the method comprising:

[0007] placing the substrate into an electron beam vacuum coater;

[0008] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0009] An oxide raw material of an evaporation source is evaporated using an electron beam to form an oxide film layer on the substrate.

[0010] Optionally, introducing a hot flow of oxygen ions into the electron beam vacuum coating machine comprises:

[0011] Ionizing oxygen to produce oxygen ions;

[0012] The oxygen ions and the protective gas are mixed and heated to generate a hot gas flow of oxygen ions;

[0013] The oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine.

[0014] Optionally, the temperature of the oxygen ion hot air flow is 100-400 degrees Celsius and the pressure is 1-2Pa.

[0015] Optionally, the flow rate of the oxygen ion hot gas flow is 10-100 sccm.

[0016] Optionally, the oxygen ion hot air flow is introduced into the electron beam vacuum coating machine, comprising:

[0017] The oxygen ion hot gas flow is introduced into the bottom of the electron beam vacuum coating machine.

[0018] In another aspect, a method for manufacturing a light emitting diode is provided, the method comprising:

[0019] fabricating epitaxial structures;

[0020] Manufacturing a dielectric layer, wherein the dielectric layer covers the epitaxial structure, and the dielectric layer has a plurality of first through holes;

[0021] Manufacturing a silver reflection layer, wherein the silver reflection layer is located on the dielectric layer, and the silver reflection layer is connected to the epitaxial structure through the plurality of first through holes;

[0022] A passivation layer is manufactured, the passivation layer covers the silver reflective layer and the dielectric layer, the passivation layer comprises a silicon oxide layer and a titanium oxide layer stacked in multiple cycles, and the silicon oxide layer is manufactured as follows:

[0023] placing the epitaxial structure into an electron beam vacuum coating machine;

[0024] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0025] The silicon oxide raw material of the evaporation source is evaporated using an electron beam to form a silicon oxide film layer.

[0026] Optionally, the titanium oxide layer is prepared as follows:

[0027] placing the epitaxial structure into an electron beam vacuum coating machine;

[0028] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0029] The titanium oxide raw material of the evaporation source is evaporated using an electron beam to form a titanium oxide film layer.

[0030] Optionally, introducing a hot flow of oxygen ions into the electron beam vacuum coating machine comprises:

[0031] Ionizing oxygen to produce oxygen ions;

[0032] The oxygen ions and the protective gas are mixed and heated to generate a hot gas flow of oxygen ions;

[0033] The oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine.

[0034] On the other hand, a light emitting diode is provided, the light emitting diode comprising: an epitaxial structure, a dielectric layer, a silver reflective layer and a passivation layer;

[0035] The dielectric layer covers the epitaxial structure, and the dielectric layer has a plurality of first through holes; the silver reflective layer is located on the dielectric layer, and the silver reflective layer is connected to the epitaxial structure through the plurality of first through holes; the passivation layer covers the silver reflective layer and the dielectric layer, and the passivation layer includes a silicon oxide layer and a titanium oxide layer stacked in multiple periods, and the silicon oxide layer is prepared by any of the methods described above.

[0036] Optionally, the titanium oxide layer is prepared by any of the methods described above.

[0037] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:

[0038] In the disclosed embodiment, when making an oxide film layer, an electron beam is used to evaporate the oxide raw material of the evaporation source to achieve coating. During the above coating process, a hot gas flow of oxygen ions is introduced into the electron beam vacuum coating machine. On the one hand, the hot gas flow of oxygen ions can drive the evaporated oxide raw material to move in the electron beam vacuum coating machine, so that the evaporated oxide raw material is more evenly dispersed, thereby making the coating thickness more uniform; on the other hand, oxygen ions can combine with the ions produced after the oxide raw material is evaporated, thereby increasing the oxide content in the oxide film layer. In summary, this solution can improve the quality of the oxide film layer, thereby improving the light extraction efficiency of the light-emitting diode containing the oxide film layer made by the above method. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0040] Figure 1 is a flow chart of a method for preparing an oxide film layer provided in an embodiment of the present disclosure;

[0041] Figure 2 is a flow chart of a method for manufacturing a light emitting diode provided by an embodiment of the present disclosure;

[0042] Figure 3 is a flow chart of another method for manufacturing a light emitting diode provided by an embodiment of the present disclosure;

[0043] Figure 4 is a structural schematic diagram of a light emitting diode provided by an embodiment of the present disclosure;

[0044] Figure 5 It is a schematic diagram of the structure of the passivation layer provided in an embodiment of the present disclosure.

[0045] The reference numerals are as follows:

[0046] 10: epitaxial structure; 100: substrate; 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 104: transparent conductive layer; 105: dielectric layer; 151: first through hole; 106: silver reflective layer; 107: passivation layer; 1701: silicon oxide layer; 1702: titanium oxide layer; 108: electrode; 181: first electrode; 182: second electrode; 109: protective layer; 1101: first passivation sublayer; 1102: second passivation sublayer; 111: first electrode pad; 112: second electrode pad; 171: second through hole; 172: third through hole; 173: fourth through hole; 174: fifth through hole. DETAILED DESCRIPTION

[0047] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0048] In the related art, the uneven state of the multiple small holes in the dielectric layer will affect the flatness of the electrode, resulting in uneven electrodes and different thicknesses, which can easily cause the electrode to break, thereby causing the chip voltage to increase or even fail.

[0049] Figure 1 is a flow chart of a method for preparing an oxide film layer provided by an embodiment of the present disclosure. Figure 1 The method steps include:

[0050] S11. Place the substrate into an electron beam vacuum coating machine.

[0051] In one example, the substrate may be a light emitting diode structure under fabrication, such as an epitaxial structure, or an epitaxial structure formed with other film layers.

[0052] S12, introducing a hot flow of oxygen ions into the electron beam vacuum coating machine.

[0053] The oxygen ion hot air flow refers to an air flow containing oxygen ions at a temperature higher than normal temperature.

[0054] S13, using an electron beam to evaporate the oxide raw material of the evaporation source to form an oxide film layer on the substrate.

[0055] In the disclosed embodiment, when making an oxide film layer, an electron beam is used to evaporate the oxide raw material of the evaporation source to achieve coating. During the above coating process, a hot gas flow of oxygen ions is introduced into the electron beam vacuum coating machine. On the one hand, the hot gas flow of oxygen ions can drive the evaporated oxide raw material to move in the electron beam vacuum coating machine, so that the evaporated oxide raw material is more evenly dispersed, thereby making the coating thickness more uniform; on the other hand, oxygen ions can combine with the ions produced after the oxide raw material is evaporated, thereby increasing the oxide content in the oxide film layer. In summary, this solution can improve the quality of the oxide film layer, thereby improving the light extraction efficiency of the light-emitting diode containing the oxide film layer made by the above method.

[0056] In the disclosed embodiment, the substrate is arranged at the upper part of the electron beam vacuum coating machine cavity, and the crucible containing the oxide raw material is placed at the bottom of the electron beam vacuum coating machine cavity. During the evaporation coating process, the electron beam vacuum coating machine drives the substrate to rotate. In the related art, the rotation causes the air mass to deviate to the surroundings, and the oxide raw material attached to the middle is reduced, resulting in uneven film thickness. However, the disclosed embodiment prevents the problem of the top rotating and causing the air mass to deviate to the surroundings, and the oxide raw material attached to the middle is reduced, by introducing the oxygen ion hot air flow, so that the film thickness is more uniform.

[0057] For example, the electron beam evaporation parameters can refer to the relevant technology, for example, when the vacuum degree is 10 -6 ~10 -3 In Pa environment, the evaporation current is 200-300 mA.

[0058] In some possible implementations of the present disclosure, introducing a hot flow of oxygen ions into the electron beam vacuum coating machine includes:

[0059] Ionizing oxygen to produce oxygen ions;

[0060] The oxygen ions and the protective gas are mixed and heated to generate a hot gas flow of oxygen ions;

[0061] The oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine.

[0062] In this implementation, oxygen ions are generated by ionization, then mixed with a protective gas and heated to generate a hot gas flow, which is then introduced into an electron beam vacuum coating machine. This implementation is simple and easy to implement.

[0063] Exemplarily, ionization of oxygen is achieved by using an ion gun, the current of the ion gun may be 1200-1500 mA, and the voltage may be 1200-1500 V.

[0064] In one example, the protective gas can be an inert gas, such as Ar gas. In the related art, electron beam vacuum coating requires the introduction of inert gas. The embodiment of the present disclosure mixes oxygen ions with the inert gas, which can not only ensure the input of oxygen ions, but also use the existing protective gas input channel without changing the structure of the electron beam vacuum coating machine.

[0065] In other examples, the shielding gas may also be oxygen.

[0066] In an embodiment of the present disclosure, the oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine, comprising:

[0067] The oxygen ion hot gas flow is introduced into the bottom of the electron beam vacuum coating machine.

[0068] In this implementation, oxygen ion hot air is flowed into the bottom of the electron beam vacuum coating machine, so that the oxygen ion hot air flow can drive the evaporated oxide to move upward, thereby dispersing it to the entire surface of the substrate.

[0069] Exemplarily, the oxygen ion hot air flow is introduced into the bottom of the electron beam vacuum coating machine, close to the crucible containing the oxide raw material, so that the oxygen ion hot air flow can best disperse the oxide raw material.

[0070] In other embodiments, the oxygen ion hot gas flow may also be introduced into the top or middle of the sub-beam vacuum coating machine.

[0071] In the embodiment of the present disclosure, the oxide raw material may be SiO 2 、Ti 3 O 5 wait.

[0072] SiO 2 For example, SiO 2 Electron beam irradiation is used to generate Si ions, O ions, SiO monomers, and SiO 2 molecules, etc., the above ions, monomers and molecules in the related art are easy to form ((SiO) x -(SiO 2 ) y ) clusters. The disclosed embodiment uses oxygen ion hot air flow to reduce the occurrence of clustering. At the same time, the O ions attached to the chip in the oxygen ion hot air flow adsorb the later gas-phase silicon oxygen ion clusters to form a stronger chemical bond, which can prevent the possibility of falling and is conducive to the formation of the oxide film layer.

[0073] In the embodiment of the present disclosure, the temperature of the oxygen ion hot air flow is 100 to 400 degrees Celsius, and the pressure is 1 to 2 Pa.

[0074] By adopting the above temperature and pressure, the uniformity of the coating can be increased without affecting the normal coating.

[0075] Exemplarily, the temperature of the oxygen ion hot air flow is 300 degrees Celsius and the pressure is 1 Pa.

[0076] In one example, the temperature of the oxygen ion hot gas flow may remain constant and continuously maintained at 300 degrees Celsius.

[0077] In another example, the temperature of the oxygen ion hot gas flow may vary with the progress of the process, for example, the temperature may be 150 degrees Celsius before the electron beam evaporation begins, and the temperature may be 300 or 400 degrees Celsius after the electron beam evaporation begins.

[0078] In the disclosed embodiment, the flow rate of the oxygen ion hot air flow may be related to the substrate rotation speed. For example, the greater the substrate rotation speed, the greater the flow rate. The oxygen ion hot air flow can absorb the deviation caused by rotation to make the chip evaporate evenly.

[0079] In the embodiment of the present disclosure, the flow rate of the oxygen ion hot gas flow is 10-100 sccm.

[0080] The use of oxygen ion hot gas flow with the above flow rate can achieve better coating uniformity.

[0081] Exemplarily, the flow rate of the oxygen ion hot gas flow is 50 sccm.

[0082] Figure 2 A flowchart of a method for manufacturing a light emitting diode provided in an embodiment of the present disclosure. Figure 2 The method steps include:

[0083] S21. Fabricating an epitaxial structure.

[0084] In the embodiment of the present disclosure, the epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence. The first semiconductor layer may be an N-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0085] Exemplarily, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN multi-quantum well layer, and the second semiconductor layer is a P-type GaN layer.

[0086] S22, manufacturing a dielectric layer, wherein the dielectric layer covers the epitaxial structure, and the dielectric layer has a plurality of first through holes.

[0087] S23, manufacturing a silver reflection layer, wherein the silver reflection layer is located on the dielectric layer, and the silver reflection layer is connected to the epitaxial structure through the plurality of first through holes.

[0088] S24, manufacturing a passivation layer, wherein the passivation layer covers the silver reflective layer and the dielectric layer, and the passivation layer includes a silicon oxide layer and a titanium oxide layer stacked in multiple cycles.

[0089] That is, the passivation layer has a distributed Bragg reflector (DBR) structure.

[0090] For example, the silicon oxide layer may be SiO 2 layer, the titanium oxide layer can be Ti 3 O 5 layer.

[0091] Wherein, the silicon oxide layer is made of Figure 1 The method of preparing the silicon oxide layer is as follows:

[0092] placing the epitaxial structure into an electron beam vacuum coating machine;

[0093] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0094] The silicon oxide raw material of the evaporation source is evaporated using an electron beam to form a silicon oxide film layer.

[0095] In the disclosed embodiment, when making a silicon oxide film layer, an electron beam is used to evaporate the silicon oxide raw material of the evaporation source to achieve coating. During the above coating process, a hot air flow of oxygen ions is introduced into the electron beam vacuum coating machine. On the one hand, the hot air flow of oxygen ions can drive the evaporated silicon oxide raw material to move in the electron beam vacuum coating machine, so that the evaporated silicon oxide raw material is more evenly dispersed, thereby making the coating thickness more uniform; on the other hand, oxygen ions can combine with the ions produced after the silicon oxide raw material is evaporated, thereby increasing the silicon oxide content in the silicon oxide film layer. In summary, this solution can improve the quality of the silicon oxide film layer, thereby improving the light extraction efficiency of the light-emitting diode containing the silicon oxide film layer made by the above method.

[0096] Figure 3 This is a flow chart of another method for manufacturing a light emitting diode provided in an embodiment of the present disclosure. Figure 3 The method steps include:

[0097] S31. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a surface of a substrate, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are in a step structure.

[0098] In the embodiment of the present disclosure, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN multi-quantum well layer, and the second semiconductor layer is a P-type GaN layer.

[0099] In one example, step S31 includes:

[0100] The first step is to grow the first semiconductor layer.

[0101] Wherein, the first semiconductor layer is an N-type GaN layer.

[0102] For example, a Metal Organic Chemical Vapor Deposition (MOCVD) device is used to grow an N-type GaN layer on the surface of a substrate.

[0103] In the embodiment of the present disclosure, the growth of the semiconductor layer can be achieved by using Veeco K465i or C4 or RB MOCVD equipment or AIXTRON metal organic compound chemical vapor deposition equipment. 2 (Hydrogen) or high purity N 2 (nitrogen) or high purity H 2 and high purity N 2 A mixed gas of high purity NH 3 As the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as the gallium source, trimethylindium (TMIn) as the indium source, silane (SiH 4 ) as N-type dopant, trimethylaluminum (TMAl) as aluminum source, bis(cyclopentadienyl)magnesium (CP 2 Mg) as a P-type dopant.

[0104] The second step is to grow the active layer.

[0105] Wherein, the active layer is an InGaN / GaN multi-quantum well layer.

[0106] Exemplarily, an InGaN / GaN multi-quantum well layer is grown on the surface of an N-type GaN layer using a MOCVD device.

[0107] The third step is to grow the second semiconductor layer.

[0108] Wherein, the second semiconductor layer is a P-type GaN layer.

[0109] Exemplarily, a P-type GaN layer is grown on the surface of the InGaN / GaN multi-quantum well layer using MOCVD equipment.

[0110] In the fourth step, the first semiconductor layer, the active layer and the second semiconductor layer are patterned to form a step structure.

[0111] Exemplarily, an inductively coupled plasma (ICP) etching technique is used to pattern the first semiconductor layer, the active layer, and the second semiconductor layer stacked sequentially in the epitaxial structure to form a step structure.

[0112] S32, manufacturing a transparent conductive layer, wherein the transparent conductive layer is located on the second semiconductor layer.

[0113] In one example, step S32 includes:

[0114] A transparent conductive layer is formed on the surface of the second semiconductor layer by using magnetron sputtering technology.

[0115] The transparent conductive layer is an indium tin oxide (ITO) layer.

[0116] S33, sequentially manufacturing a dielectric layer, a silver reflective layer and a protective layer, wherein the dielectric layer covers the transparent conductive layer, the dielectric layer has a plurality of first through holes, the silver reflective layer is located on the dielectric layer, the silver reflective layer is connected to the transparent conductive layer through the plurality of first through holes, and the protective layer covers the silver reflective layer.

[0117] In one example, step S33 includes:

[0118] An insulating film covering the transparent conductive layer is formed on the surface of the second semiconductor layer by magnetron sputtering technology. The insulating film is patterned by etching technology to obtain an insulating layer having a plurality of first through holes. A silver reflective layer is formed on the insulating layer by magnetron sputtering technology, and the silver reflective layer is connected to the epitaxial structure through the plurality of first through holes. A protective layer is formed on the silver reflective layer by magnetron sputtering technology.

[0119] The dielectric layer may be a silicon dioxide layer, and the thickness of the dielectric layer is 4000-5000 angstroms, for example, 5000 angstroms.

[0120] The protective layer may include a combination of a Cr layer, an Al layer, a Ti layer, a Ni layer, a Pt layer and an Au layer. For example, the protective layer includes a Cr layer, an Al layer, a Ti layer, a Ni layer, a Pt layer and an Au layer stacked in sequence.

[0121] S34, manufacturing a first passivation sublayer, wherein the first passivation sublayer covers the silver reflective layer and the dielectric layer, and the first passivation sublayer includes a silicon oxide layer and a titanium oxide layer stacked in multiple cycles.

[0122] In one example, step S34 includes: sequentially depositing multiple cycles of silicon oxide and titanium oxide films; opening second through holes and third through holes in the silicon oxide and titanium oxide films by a patterning technique to obtain a first passivation sublayer.

[0123] The silicon oxide layer in the first passivation sublayer is made of Figure 1 The method of preparing the silicon oxide layer is as follows:

[0124] placing the epitaxial structure into an electron beam vacuum coating machine;

[0125] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0126] The silicon oxide raw material of the evaporation source is evaporated using an electron beam to form a silicon oxide film layer.

[0127] Optionally, the titanium oxide layer in the first passivation sublayer is Figure 1 The titanium oxide layer is prepared in the following manner:

[0128] placing the epitaxial structure into an electron beam vacuum coating machine;

[0129] Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine;

[0130] The titanium oxide raw material of the evaporation source is evaporated using an electron beam to form a titanium oxide film layer.

[0131] It should be noted that silicon oxide and titanium oxide are prepared alternately and continuously, so it is only necessary to put the two raw materials at the bottom of the electron beam vacuum coating machine at the same time and irradiate the electron beam alternately during preparation.

[0132] S35 , manufacturing a first electrode and a second electrode, wherein the first electrode is connected to the first semiconductor layer through the second through hole, and the second electrode is connected to the protective layer through the third through hole.

[0133] In one example, step S35 includes:

[0134] The first electrode and the second electrode are manufactured by using electron beam evaporation technology and etching technology.

[0135] In the embodiment of the present disclosure, the first electrode and the second electrode include a Cr layer, an Al layer, a Ti layer, a Ni layer, a Ti layer, an Al layer, a Cr layer, a Pt layer, and a Ti layer stacked in sequence.

[0136] S36, manufacturing a second passivation sublayer, wherein the second passivation sublayer covers the passivation layer, the first electrode and the second electrode, and the second passivation sublayer includes a silicon oxide layer and a titanium oxide layer stacked in multiple cycles.

[0137] In one example, step S36 includes: sequentially depositing multiple cycles of silicon oxide and titanium oxide films; opening fourth through holes and fifth through holes on the silicon oxide and titanium oxide films by a patterning technique to obtain a second passivation sublayer.

[0138] The silicon oxide layer in the second passivation sublayer is made of Figure 1 Made in the manner shown.

[0139] Optionally, the titanium oxide layer in the second passivation sublayer is formed as follows: Figure 1 Made in the manner shown.

[0140] The first passivation sublayer and the second passivation sublayer constitute the aforementioned passivation layer.

[0141] S37, manufacturing a first electrode pad and a second electrode pad, wherein the first electrode pad is connected to the first electrode through the fourth through hole, and the second electrode pad is connected to the second electrode through the fifth through hole.

[0142] In one example, step S37 includes:

[0143] The first electrode pad and the second electrode pad are manufactured by using electron beam evaporation technology and etching technology.

[0144] In the embodiment of the present disclosure, the first electrode pad and the second electrode pad include a Ti layer, an Al layer, a Ti layer, an Al layer, a Ti layer, a Pt layer, and an AuSn layer stacked in sequence.

[0145] Figure 4 is a schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 4 The light emitting diode includes: an epitaxial structure 10 , a dielectric layer 105 , a silver reflective layer 106 and a passivation layer 107 .

[0146] The dielectric layer 105 covers the epitaxial structure 10 , and the dielectric layer 105 has a plurality of first through holes 151 ; the silver reflective layer 106 is located on the dielectric layer 105 , and the silver reflective layer 106 is connected to the epitaxial structure 10 through the plurality of first through holes 151 ; the passivation layer 107 covers the silver reflective layer 106 and the dielectric layer 105 .

[0147] Figure 5 Schematic diagram of the structure of the passivation layer provided by the embodiment of the present disclosure. Figure 5 As shown, the passivation layer 107 includes a silicon oxide layer 1701 and a titanium oxide layer 1702 stacked in multiple cycles. Figure 1 Prepared as shown.

[0148] In the disclosed embodiment, when making a silicon oxide film layer, an electron beam is used to evaporate the silicon oxide raw material of the evaporation source to achieve coating. During the above coating process, a hot air flow of oxygen ions is introduced into the electron beam vacuum coating machine. On the one hand, the hot air flow of oxygen ions can drive the evaporated silicon oxide raw material to move in the electron beam vacuum coating machine, so that the evaporated silicon oxide raw material is more evenly dispersed, thereby making the coating thickness more uniform; on the other hand, oxygen ions can combine with the ions produced after the silicon oxide raw material is evaporated, thereby increasing the silicon oxide content in the silicon oxide film layer. In summary, this solution can improve the quality of the silicon oxide film layer, thereby improving the light extraction efficiency of the light-emitting diode containing the silicon oxide film layer made by the above method.

[0149] Optionally, the titanium oxide layer also adopts Figure 1 Prepared as shown.

[0150] In the embodiment of the present disclosure, the epitaxial structure 10 includes a first semiconductor layer 101 , an active layer 102 , and a second semiconductor layer 103 which are stacked in sequence.

[0151] like Figure 4 As shown, the light emitting diode may further include a transparent conductive layer 104 and an electrode 108 .

[0152] The transparent conductive layer 104 is located on the second semiconductor layer 103 ; the dielectric layer 105 covers the transparent conductive layer 104 ; the electrode 108 is located on the passivation layer 107 , and the electrode 108 passes through the passivation layer 107 to connect with the epitaxial structure 10 .

[0153] like Figure 4 As shown, the light emitting diode may further include a protection layer 109 , and the protection layer 109 covers the silver reflective layer 106 .

[0154] In the embodiment of the present disclosure, the protective layer 109 may include a combination of Cr layer, Al layer, Ti layer, Ni layer, Pt layer and Au layer. For example, the protective layer 109 includes a Cr layer, an Al layer, a Ti layer, a Ni layer, a Pt layer and an Au layer stacked in sequence.

[0155] like Figure 4 As shown, the light-emitting diode also includes a substrate 100, a first semiconductor layer 101, an active layer 102 and a second semiconductor layer 103 are sequentially stacked on the surface of the substrate 100, and the first semiconductor layer 101, the active layer 102 and the second semiconductor layer 103 are in a step structure, and the step surface is located in the first semiconductor layer 101.

[0156] like Figure 4 As shown, the electrode 108 includes a first electrode 181 and a second electrode 182 .

[0157] like Figure 4 As shown, the passivation layer 107 includes a first passivation sublayer 1101 and a second passivation sublayer 1102 , wherein the first passivation sublayer 1101 and the second passivation sublayer 1102 both include a silicon oxide layer 1701 and a titanium oxide layer 1702 stacked in multiple cycles.

[0158] The first electrode 181 is connected to the first semiconductor 101 through the second through hole 171 of the first passivation sublayer 1101 , and the second electrode 182 is connected to the silver reflective layer 106 through the third through hole 172 of the first passivation sublayer 1101 .

[0159] like Figure 4As shown, the light emitting diode may further include a first electrode pad 111 and a second electrode pad 112 .

[0160] The second passivation sublayer 110 covers the first passivation sublayer 1101 , the first electrode 181 and the second electrode 182 .

[0161] The first electrode pad 111 is connected to the first electrode 181 through the fourth through hole 173 of the second passivation sublayer 110 , and the second electrode pad 112 is connected to the second electrode 182 through the fifth through hole 174 of the second passivation sublayer 110 .

[0162] In the embodiment of the present disclosure, the substrate 100 may be any one of a sapphire substrate, a silicon substrate, etc., and the present disclosure does not limit the material of the substrate.

[0163] Exemplarily, the substrate 100 is a sapphire substrate.

[0164] In the embodiment of the present disclosure, the first semiconductor layer 101 may be an N-type semiconductor layer, the active layer 102 may be a multi-quantum well layer, and the second semiconductor layer 103 may be a P-type semiconductor layer.

[0165] Exemplarily, the first semiconductor layer 101 is an N-type GaN layer, the active layer 102 is an InGaN / GaN multi-quantum well layer, and the second semiconductor layer 103 is a P-type GaN layer.

[0166] In another example, the first semiconductor layer 101 may be a P-type semiconductor layer, the active layer 102 may be a multi-quantum well layer, and the second semiconductor layer 103 may be an N-type semiconductor layer.

[0167] In the embodiment of the present disclosure, the transparent conductive layer 104 may be an ITO layer.

[0168] In the embodiment of the present disclosure, the dielectric layer 105 may be a silicon dioxide layer.

[0169] In the disclosed embodiment, the thickness of the dielectric layer 105 is 4000-5000 angstroms, for example, 5000 angstroms.

[0170] In the embodiment of the present disclosure, the first electrode 181 and the second electrode 182 include a Cr layer, an Al layer, a Ti layer, a Ni layer, a Ti layer, an Al layer, a Cr layer, a Pt layer, and a Ti layer stacked in sequence.

[0171] In the embodiment of the present disclosure, the first electrode pad 111 and the second electrode pad 112 include a Ti layer, an Al layer, a Ti layer, an Al layer, a Ti layer, a Pt layer, and an AuSn layer stacked in sequence.

[0172] In one example, when the first semiconductor layer 101 is an N-type semiconductor layer, the first electrode 181 is an N-electrode, and the first electrode pad 111 is an N-electrode pad; when the second semiconductor layer 103 is a P-type semiconductor layer, the second electrode 182 is a P-electrode, and the second electrode pad 112 is a P-electrode pad.

[0173] In another example, when the first semiconductor layer 101 is a P-type semiconductor layer, the first electrode 181 is a P-electrode, and the first electrode pad 111 is a P-electrode pad; when the second semiconductor layer 103 is an N-type semiconductor layer, the second electrode 182 is an N-electrode, and the second electrode pad 112 is an N-electrode pad.

[0174] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for preparing an oxide film, characterized in that: The method comprises: placing the substrate into an electron beam vacuum coater; Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine; An oxide raw material of an evaporation source is evaporated using an electron beam to form an oxide film layer on the substrate.

2. The method according to claim 1, characterized in that Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine comprises: Ionizing oxygen to produce oxygen ions; The oxygen ions and the protective gas are mixed and heated to generate a hot gas flow of oxygen ions; The oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine.

3. The method according to claim 2, characterized in that The temperature of the oxygen ion hot air flow is 100-400 degrees Celsius, and the pressure is 1-2Pa.

4. The method according to claim 2, characterized in that: The flow rate of the oxygen ion hot gas flow is 10-100 sccm.

5. The method according to claim 2, characterized in that: The method of introducing the oxygen ion hot gas flow into the electron beam vacuum coating machine comprises: The oxygen ion hot gas flow is introduced into the bottom of the electron beam vacuum coating machine.

6. A method for manufacturing a light emitting diode, characterized in that: The method comprises: fabricating epitaxial structures; Manufacturing a dielectric layer, wherein the dielectric layer covers the epitaxial structure, and the dielectric layer has a plurality of first through holes; Manufacturing a silver reflection layer, wherein the silver reflection layer is located on the dielectric layer, and the silver reflection layer is connected to the epitaxial structure through the plurality of first through holes; A passivation layer is manufactured, the passivation layer covers the silver reflective layer and the dielectric layer, the passivation layer comprises a silicon oxide layer and a titanium oxide layer stacked in multiple cycles, and the silicon oxide layer is manufactured as follows: placing the epitaxial structure into an electron beam vacuum coating machine; Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine; The silicon oxide raw material of the evaporation source is evaporated using an electron beam to form a silicon oxide film layer.

7. The method according to claim 6, characterized in that The titanium oxide layer is prepared as follows: placing the epitaxial structure into an electron beam vacuum coating machine; Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine; The titanium oxide raw material of the evaporation source is evaporated using an electron beam to form a titanium oxide film layer.

8. The method according to claim 6 or 7, characterized in that: Introducing a hot flow of oxygen ions into the electron beam vacuum coating machine comprises: Ionizing oxygen to produce oxygen ions; The oxygen ions and the protective gas are mixed and heated to generate a hot gas flow of oxygen ions; The oxygen ion hot gas flow is introduced into the electron beam vacuum coating machine.

9. A light emitting diode, characterized in that: The light emitting diode comprises: an epitaxial structure, a dielectric layer, a silver reflective layer and a passivation layer; The dielectric layer covers the epitaxial structure, and the dielectric layer has a plurality of first through holes; the silver reflective layer is located on the dielectric layer, and the silver reflective layer is connected to the epitaxial structure through the plurality of first through holes; the passivation layer covers the silver reflective layer and the dielectric layer, and the passivation layer includes a silicon oxide layer and a titanium oxide layer stacked in multiple periods, and the silicon oxide layer is prepared by the method described in any one of claims 1 to 5.

10. The light emitting diode according to claim 9, characterized in that: The titanium oxide layer is prepared by the method according to any one of claims 1 to 5.

Images