Cavity cover of epitaxial process reaction chamber, reaction chamber and epitaxial equipment

Abstract

The invention discloses a cavity cover of an epitaxial process reaction cavity, the reaction cavity and epitaxial equipment, and relates to the field of semiconductor manufacturing equipment. A first through hole allowing a first gas inlet structure to penetrate through is formed in the center of the cavity cover, the first gas inlet structure is used for introducing reaction gas into the reaction cavity, the cavity cover is provided with a second gas inlet structure around the first through hole, and the second gas inlet structure comprises a plurality of carrier gas output pieces capable of independently feeding gas; each carrier gas output piece is provided with a gas uniformizing assembly, and carrier gas sprayed out after the second gas inlet structure is uniformized by the gas uniformizing assemblies can press down at least part of reaction gas sprayed out by the second gas inlet structure. According to the invention, the carrier gas is homogenized through the gas homogenizing assembly of the carrier gas output part, and then the carrier gas is used for pressing down and scattering the reaction gas, so that the film growth speed of each area on the wafer tends to be consistent, and the film thickness is more uniform.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing equipment, and in particular to a chamber cover of an epitaxial process reaction chamber, a reaction chamber and epitaxial equipment. Background Art

[0002] The epitaxial process is to deposit a thin single crystal layer on a single crystal substrate. This newly deposited single crystal layer is called an epitaxial layer or film. There are two main types of epitaxial processes: homoepitaxial and heteroepitaxial. Homoepitaxial refers to the growth of the same material on the same type of substrate. The epitaxial layer and the substrate have exactly the same lattice structure. Heteroepitaxial refers to the growth of another material on a substrate of one material. In this case, the lattice structure of the epitaxially grown crystal layer and the substrate may be different. The epitaxial process can be used in different chip products, and the types of epitaxy for different products are also different, including Si epitaxy, SiC epitaxy, GaN epitaxy, etc. The epitaxial process plays an important role in the manufacture of semiconductor devices. The traditional epitaxial process has insufficient uniformity in the thickness of the final film due to the uneven airflow in the reaction chamber, which makes it difficult to meet the increasing production needs. Summary of the invention

[0003] In order to solve the problem of insufficient uniformity of thin film thickness caused by the uneven air flow in the above-mentioned reaction chamber, the first aspect of the present invention provides a chamber cover for an epitaxial process reaction chamber, comprising: a first through hole is provided in the center of the chamber cover for a first air intake structure to pass through, the first air intake structure is used to introduce reaction gas into the reaction chamber, the chamber cover is provided with a second air intake structure around the first through hole, the second air intake structure includes a plurality of carrier gas output parts that can independently intake air, each carrier gas output part is provided with a gas homogenizing component, and the carrier gas ejected from the second air intake structure after being homogenized by the gas homogenizing component can press down at least part of the reaction gas ejected from the second air intake structure.

[0004] Optionally, the carrier gas output member also includes an air inlet channel connected to the air uniforming component, the air uniforming component includes an air uniforming cavity and an air delivery element, the air inlet channel is formed by the upper surface of the cavity cover being recessed inward by a preset distance along the thickness direction of the cavity cover, the air uniforming cavity is arranged below the air inlet channel and connected to the air inlet channel, the air delivery element is embedded in the cavity cover, the air delivery element includes an upper surface covering the air uniforming cavity, the upper surface is provided with an air flow hole penetrating the air delivery element along the thickness direction of the air delivery element, and the upper end of the air flow hole is connected to the air uniforming cavity.

[0005] Optionally, a stepped groove is provided at the bottom of the cavity cover, and the stepped groove includes a gas transmission element installation groove formed by being recessed inwardly along the lower surface of the cavity cover, and a uniform gas cavity formed by contracting inwardly along the gas transmission element installation groove, and the width of the gas transmission element installation groove is greater than the width of the uniform gas cavity.

[0006] Optionally, the air inlet passage is communicated with the top of the stepped groove.

[0007] Optionally, the gas delivery element, the gas delivery element mounting groove, and the gas uniforming cavity are annular structures and are all in a circular ring shape.

[0008] Optionally, each of the carrier gas output members includes two air inlet channels, and the two air inlet channels are symmetrically arranged about a central axis of the chamber cover.

[0009] Optionally, the gas delivery element is provided with a plurality of evenly distributed air flow holes along the circumferential direction.

[0010] Optionally, the sum of the cross-sectional areas of all the air flow holes of each of the air delivery elements is equal to the sum of the cross-sectional areas of the air inlet channels connected to the air delivery elements.

[0011] The second aspect of the present invention provides a reaction chamber, comprising a chamber cover of the epitaxial process reaction chamber described in any one of the first aspect of the present invention, characterized in that it also includes a reaction chamber, a rotatable base arranged in the reaction chamber and parallel to the chamber cover and spaced apart, and a plurality of wafer carriers distributed circumferentially on the base, the wafer carriers being used to carry the workpiece to be processed, the base being able to rotate around the rotation center axis of the base with the wafer carrier, the wafer carrier being able to rotate around the rotation center axis of the base, the second air intake structure comprising a plurality of air flow holes opened on the bottom surface of the chamber cover facing the reaction chamber and being used to spray carrier gas, the air flow holes being evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components comprising the air flow holes on one or more adjacent concentric circles.

[0012] Optionally, the number of the air flow holes on each concentric circle is the same, and all the air flow holes of the second air intake structure are radially distributed along multiple uniformly distributed radial directions.

[0013] Optionally, any radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, each of the line segments rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of the areas corresponds to one or more of the carrier gas output elements, and the thin film growth rate of the area of ​​the workpiece to be processed corresponding to the carrier gas output element can be changed by adjusting the carrier gas flow rate of any of the carrier gas output elements.

[0014] Optionally, the width of the second air intake structure is equal to the radius of the workpiece to be processed.

[0015] A third aspect of the present invention provides an epitaxial device, comprising a chamber cover of any epitaxial process reaction chamber described in the first aspect of the present invention.

[0016] Beneficial effects of the present invention: the chamber cover of the present invention is provided with a second air inlet structure including a plurality of carrier gas output parts, which can press down at least part of the reaction gas sprayed out by the first air inlet structure, so as to utilize the carrier gas to at least partially disperse the airflow of the reaction gas, so that the reactants flowing to the surface of the wafer are more uniform, and the thin film growth rate in each area of ​​the wafer is more uniform; at the same time, each carrier gas output part is provided with a gas homogenizing component, and the carrier gas is fully homogenized by the gas homogenizing component, so that the carrier gas introduced into various places in the reaction chamber itself is very uniform, further improving the uniformity of the airflow field in the entire reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0018] Figure 1 This is a schematic structural diagram of a reaction chamber of an epitaxial process in an embodiment of the present invention;

[0019] Figure 2 An exploded view of a chamber cover of an epitaxial process reaction chamber according to an embodiment of the present invention;

[0020] Figure 3 for Figure 2 A magnified view of point A;

[0021] Figure 4 Schematic diagram of the structure of a chamber cover of an epitaxial process reaction chamber in an embodiment of the present invention;

[0022] Figure 5 is a cross-sectional view of a chamber cover of an epitaxial process reaction chamber according to an embodiment of the present invention;

[0023] Figure 6 Schematic diagram of the structure of a chip in an embodiment of the present invention.

[0024] Among them, the figure markings are: 100, reaction chamber; 1, chamber cover; 2, reaction chamber; 21, side wall; 3, base; 31, wafer carrier; 32, wafer; 321, outer circle area; 322, middle circle area; 323, inner circle area; 4, first air intake structure; 5, second air intake structure; 52, carrier gas output member; 521, inner carrier gas output member; 522, middle carrier gas output member; 523, outer carrier gas output member; 6, air intake pipeline; 7, rotating device; 9, heating device; 10, first through hole; 11, protrusion; 22, gas delivery element; 23, air intake channel; 24, stepped groove; 25, air flow hole; 26, gas uniformity component; 28, gas delivery element mounting groove; 29, gas uniformity chamber. DETAILED DESCRIPTION

[0025] In order to better understand the technical content of the present invention, specific embodiments are given and described as follows in conjunction with the accompanying drawings.

[0026] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed by the present invention are not limited to any implementation. In addition, some aspects disclosed by the present invention can be used alone or in any appropriate combination with other aspects disclosed by the present invention.

[0027] It should be noted that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined. The meaning of "plurality" is one or more, unless otherwise clearly and specifically defined.

[0029] In the description of the present invention, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] Reference throughout the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment," "in some embodiments," or "in some of these embodiments" appear in various places throughout the specification, not all references are to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0032] See also Figure 1 , an embodiment of the present application provides an epitaxial device, the epitaxial device includes a reaction chamber 100, the reaction chamber 100 includes a reaction chamber 2, a chamber cover 1, and a side wall 21, the chamber cover 1 and the side wall 21 together enclose the reaction chamber 100. In some embodiments, the reaction chamber 2 is provided with a bottom plate (not shown) at the bottom relative to the chamber cover 1, and the bottom plate seals the reaction chamber 2 from below. It can be understood that the chamber cover 1 is the chamber cover 1 of the epitaxial process reaction chamber 100.

[0033] In some embodiments, the reaction chamber 100 includes a rotatable base 3, the base 3 is arranged parallel to the chamber cover 1, and optionally, the base 3 is spaced 40mm-400mm from the chamber cover 1, and the base is used to carry a wafer tray 31, and the wafer tray 31 is used to carry a workpiece to be processed. The workpiece to be processed includes a wafer 32, a wafer, etc. The reaction chamber 100 includes a rotating device 7 arranged at the bottom of the base 3, and the rotating device 7 can drive the base 3 to rotate.

[0034] In some embodiments, the reaction chamber 100 includes a plurality of wafer trays 31 distributed in a circle on the base 3, the wafer trays 31 are used to carry the workpiece to be processed, the base 3 can rotate with the wafer trays 31 around the rotation center axis c of the base 3, and the wafer trays 31 can rotate around the rotation center axis d of the wafer trays 31.

[0035] In one embodiment, a heating device 9 is further provided at the bottom of the base 3 , and the heating device 9 can be a resistance heating device, an electromagnetic induction heating device, or an RFC heating device, etc., which is not limited. The heating device 9 is used to heat the wafer carrier 31 , the workpiece to be processed, and the base 3 .

[0036] In some embodiments, the center of the chamber cover 1 is provided with a first through hole 10 for the first air inlet structure 4 to pass through, and the first air inlet structure 4 is used to introduce the reaction gas into the reaction chamber 100. In some embodiments, the first air inlet structure 4 has a plurality of air outlet holes (not shown) along the circumference, and the air outlet holes are used to introduce the reaction gas into the surrounding reaction chamber 2.

[0037] The chamber cover 1 is provided with a second gas inlet structure 5 around the first through hole 10. The second gas inlet structure 5 includes a plurality of carrier gas output parts 52 capable of independent gas inlet. Each carrier gas output part 52 is provided with a gas homogenizing component 26. The carrier gas ejected from the second gas inlet structure 5 after being homogenized by the gas homogenizing component 26 can press down at least part of the reaction gas ejected from the first gas inlet structure 4. In some embodiments, the second gas inlet structure 5 includes two carrier gas output parts 52 capable of independent gas inlet. In other embodiments, the second gas inlet structure 5 includes three or more carrier gas output parts 52 capable of independent gas inlet.

[0038] It is understandable that when the gas is ejected from the first gas inlet structure 4 or the second gas inlet structure 5, it will diffuse in all directions along the forward direction. As the gas ejection distance increases, a gas flow with a wider and wider cross-section will be formed. The edges of the gas flows in the same direction contact each other and finally form a continuous gas curtain. Therefore, it is not necessary to open continuous pores, but the pores are arranged at intervals to achieve the effect of pressing the reaction gas with the carrier gas. It should be noted that the reaction gas includes a first precursor gas and a second precursor gas. The first precursor gas is a gas containing a group V element, such as TCS. TCS (Trichlorosilane) is a chemical substance with a chemical formula of SiHCl3, or a gas of a group VI element. The second precursor gas is an organic substance containing a group III element, such as ethylene gas or a gas of a group II element. When the first precursor gas and the second precursor gas are simultaneously introduced into the first gas inlet structure 4, the first precursor gas and the second precursor gas can be separated by a partition (not shown) and ejected through different gas outlets, so that the first precursor gas and the second precursor gas can react chemically only when they are ejected into the reaction chamber 100. It is understandable that the first precursor gas and the second precursor gas can be interchangeable. The carrier gas is a gas that does not react with the first precursor gas and the second precursor gas, such as nitrogen, argon, hydrogen, etc.

[0039] In some embodiments, the reaction gas also includes a doping gas, which can be any one of NO, N2O, N2 and the like. The flow rate of the doping gas can be set as needed, for example, it can be 0.5% of the carrier gas flow rate. When the carrier gas is 40 SLM, the doping gas is 0.2 SLM, and there is no limitation.

[0040] Since the concentration of the reaction gas ejected from the first air inlet structure 4 gradually decreases along the forward direction with the continuous chemical reaction, the film growth rate of the wafer on the side closest to the first air inlet structure 4 is the highest, and the farther away from the first air inlet structure 4, the lower the film growth rate of the wafer. At the same time, since the wafer carrier 31 rotates continuously with the wafer, the area closest to the first air inlet structure 4 on the wafer will theoretically be repeatedly deposited by more reactants after the reaction of the reaction gas, and the area far away from the first air inlet structure 4 will be repeatedly deposited by fewer reactants or even no repeated deposition, making the film growth at various locations on the wafer very uneven. The second air inlet structure 5 provided in the reaction chamber 100 of the present invention can press down the reaction gas ejected from the first air inlet structure 4, at least partially disperse the airflow of the reaction gas, and make the reactants flowing to the surface of the wafer more uniform, so that the film growth rate of each area on the final wafer is more uniform. By using the carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the reaction gas in the preset proportion will not be destroyed, and on the other hand, the gas flow of the carrier gas output member 52 corresponding to each area can be accurately adjusted according to the film thickness condition on the wafer surface, so as to achieve very precise adjustment.

[0041] See also Figure 2 In some embodiments, the carrier gas output member 52 further includes an air inlet channel 23 connected to the air homogenizing component 26. The air homogenizing component 26 includes an air homogenizing cavity 29 and an air delivery element 22. The air inlet channel 23 is formed by the upper surface of the chamber cover 1 being recessed inward by a preset distance along the thickness direction of the chamber cover 1. The air homogenizing cavity 29 is disposed in the chamber cover 1 and is connected to the air inlet channel 23 above the air homogenizing cavity 29. The air homogenizing cavity 29 has a cavity that is continuous on a horizontal plane. The air delivery element 22 is embedded in the chamber cover 1. In some embodiments, the air delivery element 22 is flush with the lower bottom surface of the chamber cover 1 after being embedded in the chamber cover 1. The air delivery element 22 includes an upper surface that blocks the air homogenizing cavity 29. The upper surface is provided with an air flow hole 25 that penetrates the air delivery element 22 along the thickness direction of the air delivery element 22. The upper end of the air flow hole 25 is connected to the air homogenizing cavity 29. By inserting the gas delivery element 22 into the chamber cover 1 in an embedded manner, it is very convenient to introduce the carrier gas from the outside through the chamber cover 1 into the reaction chamber 2 while also realizing the gas homogenization function, and the structure is simple and the gas homogenization effect is better. It can be understood that the gas delivery element 22 can be fixedly connected to the chamber cover 1 by welding, abutment, etc. The unevenness of the carrier gas itself will affect the flow and reaction of the reaction gas when it is pressed down. The setting of the gas homogenization component 26 can improve the uniformity of the carrier gas blown to various places inside the reaction chamber 100, prevent the phenomenon of excessive or insufficient local gas flow, thereby improving the uniformity of the gas flow field of the reaction chamber 100.

[0042] In some embodiments, each carrier gas output member 52 includes one gas delivery element 22. Each gas delivery element 22 has a plurality of gas flow holes 25 evenly distributed along one or more concentric circles thereof, and the even distribution mentioned in the present application means that the spacing is equal.

[0043] In some embodiments, the second air inlet structure 5 includes a plurality of air flow holes 25 opened on the bottom surface of the chamber cover 1 toward the reaction chamber 2 and used for spraying carrier gas, and the air flow holes 25 are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base 3, and each of the carrier gas output parts 52 includes the air flow holes 25 on one or more adjacent concentric circles.

[0044] See also Figure 3 , Figure 5In some embodiments, a stepped groove 24 is provided at the bottom of the chamber cover 1. The stepped groove 24 includes a gas transmission element installation groove 28 formed by being recessed inward along the lower surface of the chamber cover 1, and a uniform gas cavity 29 formed by shrinking inward along the gas transmission element installation groove 28. The width of the gas transmission element installation groove 28 is greater than the width of the uniform gas cavity 29. Thus, when the gas transmission element 22 is installed in the gas transmission element installation groove 28, the gas transmission element 22 abuts against the top of the gas transmission element installation groove 28. At this time, the upper surface of the gas transmission element 22 can just cover the bottom of the uniform gas cavity 29 to form a nearly closed space of the uniform gas cavity 29. At the same time, the gas flow in the uniform gas cavity 29 can be guided out of the uniform gas cavity 29 by opening an air flow hole 25 in the gas transmission element 22 that runs through the upper and lower surfaces of the gas transmission element 22.

[0045] In some embodiments, the width of the uniform gas cavity 29 is greater than the diameter of the air inlet channel 23. In this way, the airflow can be better diffused to the surroundings after entering the uniform gas cavity 29 from the air inlet channel 23, so that the carrier gas is distributed more evenly.

[0046] See also Figure 3 In some embodiments, the air inlet channel 23 is communicated with the top of the stepped groove 24. Specifically, the bottom of the air inlet channel 23 is communicated with the top of the gas homogenizing chamber 29.

[0047] In some embodiments, the gas delivery element 22 and the gas delivery element mounting groove 28 are both annular, and the height, shape, and width of the gas delivery element 22 are the same as those of the gas delivery element mounting groove 28 .

[0048] See also Figure 4 In one embodiment, a protrusion 11 is provided on the bottom surface of the cavity cover 1, and the protrusion 11 protrudes downward relative to the periphery of the cavity cover 1. When the cavity cover 1 is installed on the side wall 21, the protrusion 11 can abut against the side wall 21 from the side, so that the cavity cover 1 can be more firmly installed on the side wall 21.

[0049] In some embodiments, the gas homogenizing cavity 29 is annular.

[0050] In some embodiments, the diameter of the air flow hole 25 is smaller than the diameter of the air inlet channel 23. For example, the diameter of the air flow hole 25 is 2-10 mm, and the diameter of the air inlet channel 23 is 5-30 mm.

[0051] In some embodiments, each of the carrier gas output members 52 includes two gas inlet channels 23 , and the two gas inlet channels 23 are symmetrically arranged about the central axis of the chamber cover 1 .

[0052] See also Figure 1In some embodiments, the width of the second air inlet structure 5 is equal to the radius of the workpiece to be processed. Specifically, the width of the second air inlet structure 5 refers to the distance between the outermost and innermost edges of the second air inlet structure 5 and the farthest edges of the gas delivery element 22. Such a configuration can meet the needs of thin film deposition while simplifying the structure of the carrier gas output element 52.

[0053] In some embodiments, the gas delivery element 22 is provided with a plurality of evenly distributed air flow holes 25 along the circumferential direction. Optionally, 20-100 air flow holes 25 are provided on each concentric circle of the gas delivery element 22. Furthermore, the sum of the cross-sectional areas of all the air flow holes 25 of each of the gas delivery elements 22 is equal to the sum of the cross-sectional areas of the air inlet channels 23 connected to the gas delivery element 22. In this way, it can be ensured that the carrier gas can quickly pass through the carrier gas output component 52, and even if it passes through the air inlet channel 23 and the gas homogenizing component 26, it will not have a significant impact on the flow rate of the carrier gas, and the gas pressure and flow rate are maintained at a relatively stable level. As an example, the diameter of the air flow hole 25 is 4 mm, and each carrier gas output component 52 includes 72 air flow holes 25, then the diameter of the air inlet channel 23 is 24 mm, and each carrier gas output component 52 includes two air inlet channels 23, then the sum of the cross-sectional areas of all the air flow holes 25 of each of the gas delivery elements 22 is approximately 904.32 mm 2 The sum of the cross-sectional areas of the two air inlet channels 23 connected to the air delivery element 22 is approximately 904.32 mm 2 , both are equal.

[0054] In some embodiments, the chamber cover 1 further includes a carrier gas inlet pipe (not shown), which extends into the inlet channel 23 and communicates with the inlet channel 23 .

[0055] See also Figure 6 , a radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, and each line segment rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of which corresponds to one or more carrier gas output parts 52; by adjusting the carrier gas flow rate of any of the carrier gas output parts 52, the film growth rate of the area of ​​the workpiece to be processed corresponding to the carrier gas output part 52 can be changed. It should be noted that one or more carrier gas output parts 52 correspond to one area on the workpiece to be processed, which means that the airflow ejected by each carrier gas output part 52 can affect the film growth rate of a specified area on the workpiece to be processed. In some embodiments, it can be understood that the ejected airflow can cover the area on the workpiece to be processed. All areas on the workpiece to be processed have corresponding carrier gas output parts 52, and the film growth rate of the specified area can be affected by adjusting the carrier gas flow rate of any carrier gas output part 52.

[0056] In this embodiment, please refer to Figure 2 , Figure 4 , Figure 5 , the workpiece to be processed is a wafer 32, and the surface of the wafer 32 is divided into an outer ring area 321, a middle ring area 322, and an inner ring area 323 from the outside to the inside. The second gas inlet structure 5 includes three carrier gas output parts 52 from the inside to the outside, namely, an inner carrier gas output part 521 corresponding to the outer ring area 321, a middle carrier gas output part 522 corresponding to the middle ring area 322, and an outer carrier gas output part 523 corresponding to the inner ring area 323. When the gas flow rate of the inner carrier gas output part 521 is increased, the film growth rate of the outer ring area 321 is reduced; when the gas flow rate of the middle carrier gas output part 522 is increased, the film growth rate of the middle ring area 322 is reduced; when the gas flow rate of the outer carrier gas output part 523 is increased, the film growth rate of the inner ring area 323 is reduced; similarly, when the gas flow rates of the inner carrier gas output part 521, the middle carrier gas output part 522, and the outer carrier gas output part 523 are reduced, the film growth rates of the corresponding surface areas of the workpiece to be processed are respectively increased. The carrier gas ejected from the second gas inlet structure 5 can press down at least part of the reaction gas ejected from the first gas inlet structure 4. When the wafer carrier 31 rotates with the wafer 32 around the rotation center axis d of the wafer carrier 31 during the epitaxial process, the film growth rate of the region of the wafer 32 corresponding to the carrier gas output 52 can be reduced by increasing the gas flow rate of any of the carrier gas outputs 52. Reducing the gas flow rate of any of the carrier gas outputs 52 can increase the film growth rate of the region of the wafer 32 corresponding to the carrier gas output 52. It can be understood that the length of the multiple continuous line segments is not limited. As an example, they can be evenly divided into multiple line segments, for example, a radius of 9 cm can be evenly divided into 3 line segments, each 3 cm. The corresponding coverage area of ​​the ejected gas flow of the carrier gas output 52 also needs to be adjusted so that the gas flow ejected from each carrier gas output 52 can cover the concentric area formed by one line segment rotating around the center of the workpiece to be processed.

[0057] In some embodiments, the number of the airflow holes 25 on each concentric circle is the same, and all the airflow holes 25 of the second air intake structure 5 are radially distributed along multiple uniformly distributed radial directions. Further, when the widths of the regions are the same, the distance between adjacent airflow holes 25 distributed along different concentric circles along the radial direction is equal to the width of the region.

[0058] In some embodiments, the epitaxial device includes an air intake pipeline 6 and a controller (not shown). Further, each carrier gas output part 52 is individually connected to the air intake pipeline 6, and the air intake pipeline 6 is connected to an external gas source. The air intake pipeline 6 includes a flow controller electrically connected to the controller, such as an MFC (Mass Flow Controller), and the controller controls each carrier gas output part 52 to individually intake air, that is, each carrier gas output part 52 can independently intake air, and the air flow of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the doping gas can be controlled as needed. Such a setting can adjust the airflow field in the specified area and improve the uniformity of the film thickness.

[0059] In some embodiments, the controller may be one of any form of general-purpose computer processors, which can be used in industrial settings for controlling various chambers and in sub-processors. The controller may include one or more structures, which may include any command or function for controlling flow rate, gas valve, gas source, rotation, movement, heating, cooling, or other processes for executing various structures, such as controlling the movement, rotation, clamping, release, and other operations of the robot arm. The controller may be coupled to various components of the multi-chip planetary epitaxial device to control its operation. For example, the controller may control the flow / cutoff of gas in the first gas inlet structure 4 and the second gas inlet structure 5, as well as the flow rate, flow rate, etc. Specifically, the gas flow / cutoff, flow rate, and flow rate of each gas inlet pipeline 6 connected to the first gas inlet structure 4 may be controlled. The gas flow / cutoff, flow rate, and flow rate of each carrier gas output 52 of the second gas inlet structure 5 may also be controlled. In some embodiments, the controller includes a central processing unit (CPU), a memory, and a supporting circuit. Optionally, the controller is a single-chip microcomputer.

[0060] The chamber cover 1 of the embodiment of the present invention is provided with a second air intake structure 5 including a plurality of carrier gas output parts 52, which can press down at least part of the reaction gas ejected from the first air intake structure 4, so as to use the carrier gas to at least partially disperse the airflow of the reaction gas, so that the reactants flowing to the surface of the wafer are more uniform, and the film growth rate of each area of ​​the wafer is more uniform. At the same time, each carrier gas output part 52 is provided with a gas homogenizing component 26, and the carrier gas is fully homogenized by the gas homogenizing component 26, so that the carrier gas introduced into each place in the reaction chamber 100 itself is very uniform, further improving the uniformity of the airflow field in the entire reaction chamber 100. It can be understood that the reaction chamber 100 and / or epitaxial equipment of the embodiment of the present invention all include the chamber cover 1 of the epitaxial process reaction chamber 100 of any of the above-mentioned embodiments, so they also have the above-mentioned technical effects, which will not be repeated.

[0061] In some implementations, the epitaxial device includes a chamber cover 1 of the epitaxial process reaction chamber 100 described in any one of the embodiments.

[0062] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A chamber cover for an epitaxial process reaction chamber, characterized in that: A first through hole is provided in the center of the chamber cover for a first air intake structure to pass through, and the first air intake structure is used to introduce reaction gas into the reaction chamber. A second air intake structure is provided around the first through hole in the chamber cover, and the second air intake structure includes a plurality of carrier gas output parts that can independently intake gas, and each of the carrier gas output parts is provided with a gas homogenizing component. The carrier gas ejected from the second air intake structure after being homogenized by the gas homogenizing component can press down at least part of the reaction gas ejected from the second air intake structure.

2. The chamber cover of the epitaxial process reaction chamber according to claim 1, characterized in that: The carrier gas output member also includes an air inlet channel connected to the air uniforming component, the air uniforming component includes an air uniforming cavity and an air delivery element, the air inlet channel is formed by the upper surface of the cavity cover being recessed inward by a preset distance along the thickness direction of the cavity cover, the air uniforming cavity is arranged below the air inlet channel and is connected to the air inlet channel, the air delivery element is embedded in the cavity cover, the air delivery element includes an upper surface covering the air uniforming cavity, the upper surface is provided with an air flow hole penetrating the air delivery element along the thickness direction of the air delivery element, and the upper end of the air flow hole is connected to the air uniforming cavity.

3. The chamber cover of the epitaxial process reaction chamber according to claim 2, characterized in that: A stepped groove is provided at the bottom of the cavity cover, and the stepped groove includes a gas transmission element installation groove formed by being recessed inwardly along the lower surface of the cavity cover, and a uniform gas cavity formed by contracting inwardly along the gas transmission element installation groove, and the width of the gas transmission element installation groove is greater than the width of the uniform gas cavity.

4. The chamber cover of the epitaxial process reaction chamber according to claim 3, characterized in that: The air inlet passage is communicated with the top of the stepped groove.

5. The chamber cover of the epitaxial process reaction chamber according to claim 3, characterized in that: The gas transmission element, the gas transmission element installation groove, and the gas uniforming cavity are annular structures and are all in a circular ring shape.

6. The chamber cover of the epitaxial process reaction chamber according to claim 2, characterized in that: Each of the carrier gas output components includes two air inlet channels, and the two air inlet channels are symmetrically arranged about the central axis of the chamber cover.

7. The chamber cover of the epitaxial process reaction chamber according to claim 2, characterized in that: The gas delivery element is provided with a plurality of evenly distributed gas flow holes along the circumferential direction.

8. The chamber cover of the epitaxial process reaction chamber according to claim 2, characterized in that: The sum of the cross-sectional areas of all the air flow holes of each of the air delivery elements is equal to the sum of the cross-sectional areas of the air inlet channels connected to the air delivery elements.

9. A reaction chamber, comprising the chamber cover of the epitaxial process reaction chamber according to any one of claims 1 to 8, characterized in that: It also includes a reaction chamber, a rotatable base arranged in the reaction chamber and parallel to the chamber cover, and a plurality of wafer carriers distributed in a circle on the base, wherein the wafer carriers are used to carry the workpiece to be processed, the base can rotate around the rotation center axis of the base with the wafer carriers, the wafer carriers can rotate around the rotation center axis of the base, the air flow holes are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components includes the air flow holes on one or more adjacent concentric circles.

10. The reaction chamber according to claim 9, characterized in that: The number of the air flow holes on each concentric circle is the same, and all the air flow holes of the second air intake structure are radially distributed along multiple uniformly distributed radial directions.

11. The reaction chamber according to claim 9, characterized in that: Any radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, each of which rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of which corresponds to one or more of the carrier gas output elements, and the thin film growth rate of the area of ​​the workpiece to be processed corresponding to the carrier gas output element can be changed by adjusting the carrier gas flow rate of any of the carrier gas output elements.

12. The reaction chamber according to claim 9, characterized in that: The width of the second air intake structure is equal to the radius of the workpiece to be processed.

13. An epitaxial device, characterized in that: A chamber cover comprising the epitaxial process reaction chamber as described in any one of claims 1-8.

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