Air hole filling piece, lower electrode assembly and process chamber

Abstract

The invention discloses an air hole filling part, a lower electrode assembly and a process chamber. The air hole filling part is used for filling a through hole of an electrostatic disc. Wherein the electrostatic chuck comprises a bearing surface and an air inlet surface which are oppositely arranged, and the through hole penetrates from the air inlet surface to the bearing surface; the air hole filling piece comprises a first filling rod fixed to the end, close to the air inlet face, in the through hole, and the first filling rod is provided with a first air inlet hole extending in the axial direction. The second filling rod is arranged at the end, close to the bearing surface, in the through hole and abuts against the first filling rod, and an airflow channel communicated with the first air inlet hole is formed in the periphery of the second filling rod; the first filling rod is used for limiting the second filling rod to move towards one side of the air inlet face. In the process, the second filling rod cannot move towards one side of the air inlet surface due to the constraint of the first filling rod, so that the distance between the end surface of the second filling rod and the wafer cannot be increased, and the sparking problem can be avoided.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a pore filling member, a lower electrode assembly and a process chamber. Background Art

[0002] Semiconductor manufacturing generally includes the step of etching the dielectric layer with capacitively coupled plasma (CCP). During CCP etching, the wafer is adsorbed on an electrostatic chuck. When the plasma (also known as electric plasma) etches the wafer, a large amount of heat is generated, and the heat on the wafer needs to be conducted away in time.

[0003] The method for conducting away the heat on the wafer is generally to set an air inlet on the electrostatic chuck, and then pass helium between the electrostatic chuck and the wafer through the air inlet, using the helium as a medium to conduct the heat on the wafer to the electrostatic chuck.

[0004] In order to prevent sparks, a filler rod needs to be placed in the air inlet to reduce the aperture of the airflow channel. As the process progresses, there is a certain probability of sparks occurring in the space between the top surface of the filler rod and the wafer. Summary of the invention

[0005] In response to the above technical problems, the present application provides a pore filling member, a lower electrode assembly and a process chamber, which can improve the problem of sparks occurring with a certain probability in the space between the top surface of the filling rod and the wafer.

[0006] In order to solve the above technical problems, in the first aspect, an embodiment of the present application provides a pore filling member, which is used to fill the through hole of the electrostatic chuck; wherein the electrostatic chuck includes a bearing surface and an air inlet surface arranged opposite to each other, and the through hole runs from the air inlet surface to the bearing surface; the pore filling member includes:

[0007] A first filling rod, fixed at one end of the through hole close to the air inlet surface, the first filling rod being provided with a first air inlet hole extending in the axial direction;

[0008] a second filling rod, disposed at one end of the through hole close to the bearing surface and abutting against the first filling rod, wherein an air flow channel communicating with the first air inlet hole is formed on the outer periphery of the second filling rod;

[0009] The first filling rod is used to limit the second filling rod from moving toward one side of the air inlet surface.

[0010] Optionally, the first filling rod includes a first cylinder and a second cylinder coaxially connected, and the diameter of the second cylinder is smaller than the diameter of the first cylinder;

[0011] The first column is arranged close to the air inlet surface and is threadedly connected to the through hole; the second column is arranged close to the bearing surface, the first air inlet hole is arranged in the first column and avoids the second column;

[0012] The second filling rod abuts against the second column.

[0013] Optionally, the second filling rod includes a third column and a fourth column coaxially connected;

[0014] The third column is arranged close to one side of the air inlet surface and is transitionally matched with the through hole, and the third column abuts against the second column; the third column is provided with a second air inlet hole extending along the axial direction, and the second air inlet hole is arranged to avoid the second column and the fourth column, and constitutes a part of the air flow channel;

[0015] A gap is provided between the fourth column and the hole wall of the through hole, and the gap constitutes another part of the air flow channel.

[0016] Optionally, the diameter of the fourth column is smaller than the diameter of the third column to form the gap, and the gap is an annular gap.

[0017] Optionally, the fourth column includes a columnar body and a protruding structure arranged on a side of the columnar body, the fourth column is interference fit with the through hole, and the protruding structure is spaced apart from the hole wall of the through hole to form the gap.

[0018] Optionally, the protrusion structure includes a plurality of dot-shaped protrusions arranged at intervals on the side surface of the columnar body.

[0019] Optionally, the protrusion structure includes at least two convex strips arranged on the side of the columnar body and extending axially, and two adjacent convex strips, the side of the columnar body and the hole wall of the through hole form the gap, and the gap is a strip-shaped gap.

[0020] Optionally, the through hole is a stepped hole, and the step of the stepped hole faces the air inlet surface;

[0021] The end face edge of the third column abuts against the step, and the second air inlet avoids the step.

[0022] In a second aspect, an embodiment of the present application further provides a lower electrode assembly, comprising an electrostatic chuck, and a pore filling member according to any one of claims 1 to 8:

[0023] The electrostatic chuck comprises a bearing surface and an air inlet surface which are arranged opposite to each other. The electrostatic chuck is provided with at least one through hole which passes from the air inlet surface to the bearing surface, and the air hole filling member is filled in the through hole.

[0024] Optionally, the electrostatic chuck includes a conductive disk and an insulating disk that are stacked, the bearing surface is located on a side of the insulating disk away from the conductive disk, the air intake surface is located on a side of the conductive disk away from the insulating disk, the through hole includes a first portion located in the insulating disk, and a second portion located in the conductive disk, and a diameter of the first portion is smaller than a diameter of the second portion;

[0025] The pore filling member is filled in the second portion, and the second filling rod is in contact with a side of the insulating disk away from the bearing surface;

[0026] An anti-corrosion component is also provided in the first part, and the anti-corrosion component is gap-matched with the first part, and the gap between the anti-corrosion component and the hole wall of the first part is connected with the strip gap.

[0027] Optionally, the end surface edge of the fourth column facing the insulating disk is provided with a plurality of notches corresponding to the strip gaps one by one, and the notches are located at the corresponding strip gaps to connect the gap between the anti-corrosion part and the hole wall of the first part with the strip gap.

[0028] Optionally, the lower electrode assembly further comprises:

[0029] A gas-distributing disk is arranged at a distance from the electrostatic chuck on one side of the air inlet surface through a sealing ring, the sealing ring, the gas-distributing disk and the electrostatic chuck form a gas-distributing space, and the through hole is connected to the gas-distributing space;

[0030] A uniform flow cavity is provided inside the uniform gas disc, a plurality of uniform flow holes are provided on a side of the uniform gas disc facing the electrostatic chuck, a third air inlet hole for air intake is provided on a side of the uniform gas disc away from the electrostatic chuck, and the uniform flow holes connect the uniform gas space with the uniform flow cavity.

[0031] In a third aspect, an embodiment of the present application further provides a process chamber, comprising a chamber body, and a lower electrode assembly as described in the above embodiments, wherein the lower electrode assembly is disposed in the chamber body.

[0032] As described above, the pore filling member of the present application includes a first filling rod and a second filling rod. The gas enters from the first air inlet of the first filling rod through the air inlet surface of the electrostatic chuck, then flows into the air flow channel on the periphery of the second filling rod, and finally flows out from the bearing surface of the electrostatic chuck, enters the gap between the wafer and the electrostatic chuck, and acts as a medium for the wafer to dissipate heat to the electrostatic chuck. Since the second filling rod is arranged at one end of the through hole close to the bearing surface and is connected to the first filling rod, and the first filling rod is fixed at one end of the through hole close to the air inlet surface, during the process, the second filling rod is subjected to the downward force (towards the air inlet surface) of the plasma and the helium flow, but is constrained by the first filling rod and cannot move to one side of the air inlet surface, so that the distance between the end face of the second filling rod and the wafer will not increase, and the occurrence of ignition problems can be avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0034] Figure 1 It is a structural schematic diagram of a process chamber of a CCP etching device in the related art;

[0035] Figure 2 It is a schematic diagram of the matching relationship between the electrostatic chuck and the filling rod in the related art;

[0036] Figure 3 is a schematic structural diagram of a process chamber provided in an embodiment of the present application;

[0037] Figure 4 Schematic diagram of the matching relationship between an electrostatic chuck and a pore filling member provided in an embodiment of the present application, wherein (a) is a cross-sectional view, (b) is a top view, and (c) is a partial enlarged view;

[0038] Figure 5 is with Figure 4 Schematic diagrams of the structures of the corresponding parts, wherein (a) is a cross-sectional view of the electrostatic chuck, (b) is a cross-sectional view of the first filling rod and the second filling rod, and (c) is a front view of the anti-corrosion part;

[0039] Figure 6 is a schematic structural diagram of a second filling rod provided in an embodiment of the present application;

[0040] Figure 71 is a schematic diagram of the structure of a first filling rod provided in an embodiment of the present application, wherein (a) is a main view, (b) is a cross-sectional view, (c) is a stereogram, and (d) is a top view;

[0041] Figure 8 1 is a schematic diagram of the structure of another second filling rod provided in an embodiment of the present application, wherein (a) is a cross-sectional view, (b) is a main cross-sectional view, (c) is a stereoscopic view, and (d) is a top plan view of a third column;

[0042] Fig. 9 is a schematic diagram of a method for installing a first filling rod and a second filling rod provided in an embodiment of the present application;

[0043] Fig.10 is a schematic diagram of a structure for providing helium to an electrostatic chuck in the related art;

[0044] Fig.11 It is a schematic diagram of the structure of a gas uniforming disk provided in an embodiment of the present application, wherein (a) is a schematic diagram of the three-dimensional structure, and (b) is a schematic diagram of the cross-sectional structure.

[0045] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0046] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0047] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0048] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0049] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0050] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0051] For ease of description, in the following embodiments, orthogonal spaces determined by horizontal planes and vertical directions are used as examples for explanation, and this premise should not be construed as a limitation to the present application.

[0052] See also Figure 1 , Figure 1 The schematic diagram of the structure of a process chamber of a CCP etching device of the related art includes a chamber body 10a, an upper electrode assembly 20a and a lower electrode assembly 30a, wherein the lower electrode assembly 30a includes an electrostatic chuck 31a, a helium distribution plate 32a, a ceramic support ring 33a, an interface plate 34a and a helium spiral flow guide 35a in sequence. A plurality of air inlet holes 311a are distributed on the electrostatic chuck 31a, and a filling rod 36a is arranged in the air inlet hole 311a, and the filling rod 36a is fixed by the friction between the filling rod 36a and the hole wall of the air inlet hole 311a.

[0053] See also Figure 2 During the process, the wafer 101a is located above the electrostatic chuck 31a. As the process proceeds, under the action of plasma and helium flow, the filling rod 36a is easy to move downward, and the distance d0 between the top of the filling rod 36a and the wafer 101a gradually increases. When d0 is greater than 0.5mm, sparking is likely to occur. Based on this, the present application provides a pore filling member, a lower electrode assembly and a process chamber.

[0054] See also Figure 3 , Figure 3 1 is a schematic diagram of the structure of a process chamber provided in an embodiment of the present application, and the process chamber may include a chamber body 100, a lower electrode assembly 200 and an upper electrode assembly 300, and the lower electrode assembly 200 is arranged in the chamber body 100. The lower electrode assembly 200 may include an electrostatic chuck 10 and a gas distribution plate 50, and the electrostatic chuck 10 is used to adsorb the wafer. The pore filling members of each embodiment of the present application can be used to fill the through hole of the electrostatic chuck 10 to provide gas between the lower surfaces of the wafer.

[0055] Please also see Figure 4 and Figure 5 The pore filling member of this embodiment may include a first filling rod 20 and a second filling rod 30. Figure 4 and Figure 5 , Figure 4 Schematic diagram of the matching relationship between an electrostatic chuck and a pore filling member provided in an embodiment of the present application, wherein (a) is a cross-sectional view, (b) is a top view, and (c) is a partial enlarged view. Figure 5 is with Figure 4The schematic diagram of the structure of the corresponding parts, wherein (a) is a cross-sectional view of the electrostatic chuck, (b) is a cross-sectional view of the first filling rod and the second filling rod, and (c) is a front view of the anti-corrosion part. The electrostatic chuck 10 includes a bearing surface 101 and an air inlet surface 102 arranged opposite to each other, and is combined with Figure 3 In the use state shown, the bearing surface 101 is the top surface, and the air inlet surface 102 is the bottom surface. The electrostatic chuck 10 is provided with at least one through hole 103 extending from the air inlet surface 102 to the bearing surface 101. In order to improve the uniformity of air intake, a plurality of through holes 103 can be provided, and they are evenly distributed on a circle concentric with the center of the electrostatic chuck 10. The first filling rod 20 is fixed at one end of the through hole 103 close to the air inlet surface 102, and the first filling rod 20 is provided with a first air inlet hole 201 extending in the axial direction. The second filling rod 30 is provided at one end of the through hole 103 close to the bearing surface 101, and abuts against the first filling rod 20. The outer periphery of the second filling rod 30 is formed with an air flow channel 301 connected to the first air inlet hole 201, and the first filling rod 20 is used to limit the second filling rod 30 from moving to one side of the air inlet surface 102.

[0056] The lower electrode assembly of this embodiment includes a first filling rod 20 and a second filling rod 30. The gas enters from the first air inlet hole 201 of the first filling rod 20 through the air inlet surface 102 of the electrostatic chuck 10, then flows into the air flow channel 301 on the periphery of the second filling rod 30, and finally flows out from the bearing surface 101 of the electrostatic chuck 10, enters the gap between the wafer and the electrostatic chuck 10, and acts as a medium for the wafer to dissipate heat from the electrostatic chuck 10. Since the second filling rod 30 is arranged at one end of the through hole 103 close to the bearing surface 101 and connected to the first filling rod 20, and the first filling rod 20 is fixed at one end of the through hole 103 close to the air inlet surface 102, during the process, the second filling rod 30 is subjected to the downward force (toward the air inlet surface 102) of the plasma and the helium gas flow, but due to the constraint of the first filling rod 20, it cannot move to the side of the air inlet surface 102, so that the distance between the end face of the second filling rod 30 and the wafer will not increase, and the occurrence of ignition problems can be avoided.

[0057] It should be noted that, in this embodiment, there may be many specific structures and connection methods of the first filling rod 20 and the second filling rod 30 .

[0058] For example, a threaded portion 104 may be provided on one side of the through hole 103 close to the air inlet surface 102, and the first filling rod 20 may be a cylinder, which may be connected in the through hole 103 by threads to achieve installation and fixation in position. The second filling rod 30 may also be a cylinder, which has a smaller diameter than the first filling rod 20 and is coaxially arranged, and the annular gap formed between the second filling rod 30 and the through hole 103 serves as the air flow channel 301, which may be connected to the end face of the first filling rod 20 close to the bearing surface 101 by a limiting structure, for example, an axial hole positioning or a limiting structure with a limiting pin at the same time. The gas flows into the annular air flow channel 301 from the first air inlet hole 201 of the first filling rod 20, and since the first filling rod 20 is fixed by threaded connection, the second filling rod 30 may be limited from moving toward one side of the air inlet surface 102.

[0059] For another example, the limiting structure of the second filling rod 30 in the previous embodiment is further improved, see Figure 6 , Figure 6 3 is a schematic diagram of the structure of a second filling rod provided in an embodiment of the present application. The side of the second filling rod 30 is provided with a convex ridge 33 extending in the axial direction. Two or more convex ridges 33 can be provided. The second filling rod 30 is fixed in the through hole 103 by the friction between the convex ridge 33 and the through hole 103 of the electrostatic chuck 10. The space between two adjacent convex ridges 33 forms an airflow channel 301. The second filling rod 30 is only connected to the end face of the first filling rod 20 close to the bearing surface 101. Since the first filling rod 20 is fixed by threaded connection, the second filling rod 30 can be restricted from moving toward the side of the air inlet surface 102. Compared with the scheme of the annular airflow channel 301, which has certain requirements on the rigidity of the second filling rod 30 (if the rigidity is too low, the second filling rod 30 may not be coaxial with the through hole 103 due to bending deformation, and a uniform annular gap cannot be formed, resulting in uneven airflow). The second filling rod 30 of this embodiment can be made of a material with not particularly strong rigidity (such as Teflon), which can ensure that each airflow channel 301 is relatively uniform. In addition, in this embodiment, the first filling rod 20 and the second filling rod 30 are not suitable to be made into an integrated structure, so as to avoid the second filling rod 30 being twisted and broken when the first filling rod 20 is assembled and tightened.

[0060] It should be noted that the first filling rod 20 and the through hole 103 are not limited to being connected by threads. It only needs to be able to play a fixing role after the two are assembled. For example, they can be positioned and fixed by a pin hole structure.

[0061] In one embodiment, see Figure 5 and Figure 7 , Figure 71 is a schematic diagram of the structure of a first filling rod provided in an embodiment of the present application, wherein (a) is a main view, (b) is a cross-sectional view, (c) is a stereogram, and (d) is a top view. The first filling rod 20 may include a first column 21 and a second column 22 connected coaxially, and the diameter of the second column 22 is smaller than the diameter of the first column 21. The first column 21 is arranged close to the air inlet surface 102 and is threadedly connected to the through hole 103; the second column 22 is arranged close to the bearing surface 101, the first air inlet hole 201 is arranged in the first column 21, and is arranged to avoid the second column 22, and the second filling rod 30 is in contact with the second column 22.

[0062] The second filling rod 30 may be the structure described in the above embodiment, and may abut against the second column 22. In this embodiment, the second column 22 is equivalent to a boss disposed on the first column 21, and may reserve space for the outlet end of the first air inlet 201, so that the gas can enter the air flow channel 301 between the second filling rod 30 and the hole wall of the through hole 103. The first column 21 and the second column 22 may be formed in one piece, or may be assembled from separate parts.

[0063] In one embodiment, see Figure 5 and Figure 8 , Figure 8 : is a structural schematic diagram of another second filling rod provided in an embodiment of the present application, wherein (a) is a cross-sectional view, (b) is a main cross-sectional view, (c) is a stereogram, and (d) is a top plan view of the third column. The second filling rod 30 may include a third column 31 and a fourth column 32 connected coaxially, the third column 31 is arranged close to the side of the air inlet surface 102, and transitionally matches with the through hole 103, and the third column 31 abuts against the second column 22. The third column 31 is provided with a second air inlet hole 301A extending along the axial direction, the second air inlet hole 301A is arranged to avoid the second column 22 and the fourth column 32, and constitutes a part of the air flow channel 301; a gap 301B is provided between the fourth column 32 and the hole wall of the through hole 103, and the gap 301B constitutes another part of the air flow channel 301. In this embodiment, the third column 31 may be equal to the diameter of the first column 21. The third column 31 and the fourth column 32 may be formed in an integrated manner, or may be assembled from separate parts.

[0064] As an example of a gap 301B, the diameter of the fourth column 32 is smaller than the diameter of the third column 31. In other words, the projection of the fourth column 32 on the end surface of the third column 31 is located within the end surface of the third column 31 to form a gap 301B, and the gap 301B is an annular gap. That is, the fourth column 32 in this embodiment can be a regular cylinder, and an annular gap 301B is formed between it and the hole wall of the through hole 103. The fourth column 32 is preferably made of a material with high rigidity to avoid bending and deformation in the through hole 103 and reducing the coaxiality between it and the through hole 103.

[0065] As another example of the gap 301B, the fourth column 32 may include a columnar body 321, and a protruding structure 322 disposed on the side of the columnar body 321. The fourth column 32 is interference-fitted with the through hole 103, and the protruding structure 322 enables the fourth column 32 to be spaced apart from the hole wall of the through hole 103 to form the gap 301B. It can be understood that the protruding structure 322 enables the fourth column 32 to be stably matched with the through hole 103.

[0066] For example, the protrusion structure 322 may include a plurality of dot-shaped protrusions (not shown in the drawings) spaced apart on the side of the columnar body 321 . The dot-shaped protrusions may form a gap 301B between the columnar body 321 and the hole wall of the through hole 103 , serving as the upper half of the airflow channel 301 .

[0067] For another example, please continue to see Figure 8 The protrusion structure 322 may include at least two convex strips 322 disposed on the side of the columnar body 321 and extending in the axial direction, and two adjacent convex strips 322, the side of the columnar body 321 and the hole wall of the through hole 103 form a gap 301B, and the gap 301B is a strip-shaped gap. In this embodiment, the fourth column 32 of this embodiment can be made of a material that is not particularly rigid (such as Teflon), and the strip-shaped gap 301B can also basically maintain the shape unchanged, which can ensure the stability of the airflow.

[0068] In one embodiment, the through hole 103 of the electrostatic chuck 10 is a stepped hole, and the step 103C of the stepped hole faces the air inlet surface 102; the edge of the end surface of the third column 31 abuts against the step 103C, so that the assembly of the second filling rod 30 can be axially positioned. The second air inlet hole 301A avoids the step 103C, so that the second air inlet hole 301A is connected with the gap 301B to form an air flow channel 301.

[0069] The present application also provides a lower electrode assembly, including an electrostatic chuck 10 and a pore filling member as described in the above embodiments. The electrostatic chuck 10 includes a bearing surface 101 and an air inlet surface 102 arranged opposite to each other, and the electrostatic chuck 10 is provided with at least one through hole 103 extending from the air inlet surface 102 to the bearing surface 101, and the pore filling member is filled in the through hole 103.

[0070] In one embodiment, see Figure 5 The electrostatic chuck 10 may include a conductive disk 11 and an insulating disk 12 which are stacked. The conductive disk 11 may be an aluminum disk, and the insulating disk 12 may be a ceramic adsorption layer formed on the surface of the conductive disk 11. The bearing surface 101 is located on the side of the insulating disk 12 away from the conductive disk 11, and the air intake surface 102 is located on the side of the conductive disk 11 away from the insulating disk 12. The through hole 103 includes a first portion 103A located in the insulating disk 12, and a second portion 103B located in the conductive disk 11. The diameter of the first portion 103A is smaller than the diameter of the second portion 103B to form a step 103C. Please also refer to Figure 4 and Figure 8 , the pore filling member is filled in the second part 103B, and the second filling rod 30 is in contact with the side of the insulating disk 12 away from the bearing surface 101; the first part 103A of the through hole 103 is also provided with an anti-corrosion member 40, for example, the anti-corrosion member 40 can be made of SiC material, which has a strong ability to resist plasma corrosion, and can protect the second filling rod 30 when the second filling rod 30 is made of Teflon material. The anti-corrosion member 40 is matched with the hole wall gap of the first part 103A of the through hole 103, and the gap 401 between the two is connected with the strip gap 301B, so that the gas can flow out from the gap 401 after passing through the strip gap 301B. As an example, a positioning hole can be set on the top surface of the fourth column 32 of the second filling rod 30, and a boss matched with the positioning hole can be set on the bottom surface of the anti-corrosion member 40, and the anti-corrosion member 40 and the fourth column 32 are positioned by the shaft hole. In addition, the second portion 103B of the through hole 103 can be set to a matching aperture according to the diameters of the first filling rod 20 and the second filling rod 30 .

[0071] As an example of a gap 401 being connected to a strip gap 301B, please continue to refer to Figure 4 The fourth column 32 of the second filling rod 30 is provided with a plurality of notches 302 corresponding to the strip gaps 301B on the end face edge facing the insulating disk 12. The notches 302 are located at the corresponding strip gaps 301B to connect the gap 401 between the anti-corrosion part 40 and the hole wall of the first part 103A of the through hole 103 and the strip gap 301B.

[0072] For specific applications, please refer to Fig. 9 , Fig. 9This is a schematic diagram of an installation method for a first filling rod and a second filling rod provided in an embodiment of the present application. The second filling rod 30 and the first filling rod 20 can be placed in the through hole 103 in sequence from the air inlet surface 102, and then a screwdriver is used to rotate the notch 202 at the bottom of the first filling rod 20 to push the second filling rod 30 toward the side of the bearing surface 101. At the same time, an altimeter is used to measure the distance between the top surface of the second filling rod 30 and the bearing surface 101 from the side of the bearing surface 101 of the electrostatic suction cup 10 through the through hole 103 until the reading of the altimeter reaches the target reading, and the installation is completed. The tolerance can be set to 0.05mm in this step. The anti-corrosion part 40 is then installed into the first part 103A of the through hole 103, and the distance between the anti-corrosion part 40 and the bearing surface 101 of the electrostatic suction cup 10 is measured by a height gauge. The slot 202 at the bottom of the first filling rod 20 is rotated with a screwdriver, and the height of the anti-corrosion part 40 is adjusted to the designed value through the threaded structure. The adjustment accuracy can reach 0.01mm. At the same time, since the height of the second filling rod 30 in the through hole 103 is limited by the first filling rod 20, sparking problems can be avoided during the process.

[0073] Furthermore, the present application further improves the air intake uniformity of the lower electrode assembly. According to the following Paschen's theorem formula:

[0074]

[0075] Among them, V b is the breakdown voltage, P is the gas pressure at the breakdown position, d is the gap size at the breakdown position, γ se is the secondary electron emission coefficient, which is material-dependent, and B and A are constants that are related to the composition of the gas. Figure 2 and Fig.10 , Fig.10 3 is a schematic diagram of a structure for providing helium to an electrostatic chuck in the related art. When the actual voltage at the top of the filling rod 36a is greater than the voltage calculated by Paschen's law, the gas at the top of the filling rod 36a will be broken down, causing sparks. Therefore, it is necessary to control the p*d value to the minimum possible to ensure that the actual voltage at the top of the filling rod 36a is less than the breakdown voltage. Figure 2 The helium distribution plate 32a in the apparatus has only one air inlet 321a, and since the voltage feed component needs to be set in the center, the air inlet 321a is eccentrically set relative to the helium distribution plate 32a. After the gas enters from the air inlet 321a, the distances from different air inlet holes 311a on the electrostatic suction cup 31a are different, and d1<d2 in the figure. When the pressure of the helium supplied at the front end fluctuates abnormally, the air inlet hole 311a closer to the helium inlet is more likely to have an instantaneous excessive helium pressure, that is, p1>p2, which makes the p*d value at p1 abnormally large, and ignition is prone to occur.

[0076] Based on the above problems, in one embodiment, please refer to Figure 3 and Fig.11 , Fig.11 It is a schematic diagram of the structure of a gas uniforming disk provided in an embodiment of the present application, wherein (a) is a schematic diagram of a three-dimensional structure, and (b) is a schematic diagram of a cross-sectional structure. The lower electrode assembly may also include a gas uniforming disk 50. The gas uniforming disk 50 is spaced apart from the electrostatic suction cup 10 on one side of the air inlet surface 102 by a sealing ring 61. The sealing ring 61, the gas uniforming disk 50 and the electrostatic suction cup 10 enclose a gas uniforming space 601. The height of the gas uniforming space 601 is determined by the degree of compression of the sealing ring 61, which can be specifically controlled by controlling the degree of tightening of the screw 71. The through hole 103 is connected to the gas uniforming space 601; a uniform flow chamber 501 is provided inside the gas uniforming disk 50, and a plurality of uniform flow holes 502 are provided on the side of the gas uniforming disk 50 facing the electrostatic suction cup 10, and a third air inlet hole 503 for air intake is provided on the side of the gas uniforming disk 50 away from the electrostatic suction cup 10, and the uniform flow holes 502 connect the gas uniforming space 601 with the uniform flow chamber 501.

[0077] As an example, three circles of evenly distributed flow holes 502 can be set on the gas uniforming disk 50, and each circle of flow uniform holes 502 is set on a pitch circle of different diameters of the gas uniforming disk 50, and the hole diameter can be 0.3~0.5mm. For example, the diameter d1 of the inner circle pitch circle and the number of holes can be: d1=40~60mm, and the number of holes can be 8~10; the diameter d2 of the middle circle pitch circle and the number of holes can be: d2=70~90mm, and the number of holes can be 12~15; the diameter d3 of the outer circle pitch circle and the number of holes can be: d3=95~120mm, and the number of holes can be 18~20.

[0078] During the process, the gas enters the uniform flow chamber 501 from the third gas inlet hole 503, and then flows into the uniform flow space 601 between the uniform gas plate 50 and the electrostatic chuck 10 from the multiple uniform flow holes 502. Fig.10 There is only one air inlet 321a, and the gas uniforming disk 50 of this embodiment has multiple flow uniforming holes 502, so that the gas in the gas uniforming space 601 is more uniform, so that the pressure of the gas flowing out from different through holes 103 of the electrostatic suction cup 10 can be basically the same, so that the actual voltage at the top of the second filling rod 30 can be more accurately controlled to avoid ignition problems.

[0079] As an example, the lower electrode assembly may further include a ceramic support ring 81 and an interface plate 82 sequentially arranged below the gas-distributing disk 50, and a spiral flow guide tube 83 arranged in the ceramic support ring 81, and the gas-distributing disk 50 and the ceramic support ring 81 are sealed by a sealing ring 62 and locked by a screw 72. The ceramic support ring 81 and the interface plate 82 are sealed by a sealing ring 63 and locked by a screw 73. The spiral flow guide tube 83 is in the ceramic support ring 81, and its two ends are respectively connected to the third air inlet hole 503 of the gas-distributing disk 50 and the air inlet channel 821 on the interface plate 82, and are respectively sealed by sealing rings 64 and 65.

[0080] In one embodiment, please refer to the drawings. This application also provides a semiconductor process equipment, which may include the process chamber described in the above embodiments.

[0081] For other working principles and processes of the process chamber and semiconductor process equipment of this embodiment, please refer to the description of the lower electrode assembly in the aforementioned embodiment of the present invention, which will not be repeated here.

[0082] The above is a detailed introduction to a lower electrode assembly, a process chamber, and a semiconductor process equipment provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0083] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. A pore filling member, characterized in that: The pore filling member is used to fill the through hole of the electrostatic chuck; wherein the electrostatic chuck comprises a bearing surface and an air inlet surface which are arranged opposite to each other, and the through hole runs from the air inlet surface to the bearing surface; the pore filling member comprises: A first filling rod, fixed at one end of the through hole close to the air inlet surface, the first filling rod being provided with a first air inlet hole extending in the axial direction; a second filling rod, disposed at one end of the through hole close to the bearing surface and abutting against the first filling rod, wherein an air flow channel communicating with the first air inlet hole is formed on the outer periphery of the second filling rod; The first filling rod is used to limit the second filling rod from moving toward one side of the air inlet surface.

2. The pore filling member according to claim 1, characterized in that: The first filling rod comprises a first cylinder and a second cylinder connected coaxially, wherein the diameter of the second cylinder is smaller than the diameter of the first cylinder; The first column is arranged close to the air inlet surface and is threadedly connected to the through hole; the second column is arranged close to the bearing surface, the first air inlet hole is arranged in the first column and avoids the second column; The second filling rod abuts against the second column.

3. The pore filling member according to claim 2, characterized in that: The second filling rod includes a third column and a fourth column coaxially connected; The third column is arranged close to one side of the air inlet surface and is transitionally matched with the through hole, and the third column abuts against the second column; the third column is provided with a second air inlet hole extending along the axial direction, and the second air inlet hole is arranged to avoid the second column and the fourth column, and constitutes a part of the air flow channel; A gap is provided between the fourth column and the hole wall of the through hole, and the gap constitutes another part of the air flow channel.

4. The pore filling member according to claim 3, characterized in that: The diameter of the fourth column is smaller than the diameter of the third column to form the gap, and the gap is an annular gap.

5. The pore filling member according to claim 3, characterized in that: The fourth column includes a columnar body and a protruding structure arranged on the side of the columnar body. The fourth column is interference-fitted with the through hole. The protruding structure enables the fourth column to be spaced apart from the hole wall of the through hole to form the gap.

6. The pore filling member according to claim 5, characterized in that: The protrusion structure includes a plurality of dot-shaped protrusions arranged at intervals on the side surface of the columnar body.

7. The pore filling member according to claim 5, characterized in that: The protrusion structure includes at least two convex strips arranged on the side of the columnar body and extending in the axial direction. Two adjacent convex strips, the side of the columnar body and the hole wall of the through hole form the gap, which is a strip-shaped gap.

8. The pore filling member according to any one of claims 3 to 7, characterized in that: The through hole is a stepped hole, and the step of the stepped hole faces the air inlet surface; The end face edge of the third column abuts against the step, and the second air inlet avoids the step.

9. A lower electrode assembly, characterized in that: Comprising an electrostatic chuck and a pore filling member according to any one of claims 1 to 8: The electrostatic chuck comprises a bearing surface and an air inlet surface which are arranged opposite to each other. The electrostatic chuck is provided with at least one through hole which passes from the air inlet surface to the bearing surface, and the air hole filling member is filled in the through hole.

10. The lower electrode assembly according to claim 9, characterized in that: The electrostatic chuck comprises a conductive disk and an insulating disk which are stacked, the bearing surface is located on a side of the insulating disk away from the conductive disk, the air inlet surface is located on a side of the conductive disk away from the insulating disk, the through hole comprises a first portion located in the insulating disk, and a second portion located in the conductive disk, the diameter of the first portion is smaller than the diameter of the second portion; The pore filling member is filled in the second portion, and the second filling rod is in contact with a side of the insulating disk away from the bearing surface; An anti-corrosion component is also provided in the first part, and the anti-corrosion component is gap-matched with the first part, and the gap between the anti-corrosion component and the hole wall of the first part is connected with the strip gap.

11. The lower electrode assembly according to claim 10, characterized in that: The end face edge of the fourth column facing the insulating disk is provided with a plurality of notches corresponding to the strip gaps one by one, and the notches are located at the corresponding strip gaps to connect the gap between the anti-corrosion part and the hole wall of the first part with the strip gap.

12. The lower electrode assembly according to any one of claims 9 to 11, characterized in that: Also includes: A gas-distributing disk is arranged at a distance from the electrostatic chuck on one side of the air inlet surface through a sealing ring, the sealing ring, the gas-distributing disk and the electrostatic chuck form a gas-distributing space, and the through hole is connected to the gas-distributing space; A uniform flow cavity is provided inside the uniform gas disc, a plurality of uniform flow holes are provided on a side of the uniform gas disc facing the electrostatic chuck, a third air inlet hole for air intake is provided on a side of the uniform gas disc away from the electrostatic chuck, and the uniform flow holes connect the uniform gas space with the uniform flow cavity.

13. A process chamber, characterized in that: It comprises a chamber body, and a lower electrode assembly as described in any one of claims 9 to 12, wherein the lower electrode assembly is arranged in the chamber body.

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