A passive far-infrared chip and chip array

Abstract

The present invention discloses a passive far-infrared chip and a chip array, belonging to the technical field of far-infrared chips. The passive far-infrared chip includes an energy capture module and a far-infrared emission module; the energy capture module is used to capture the far-infrared radiation energy in the human body and the environment as a trace amount of electric energy for driving the chip to work; the far-infrared emission module is used to generate and emit far-infrared rays of a specific band. The present invention integrates the energy capture module and the far-infrared emission module in a tiny chip through a stacked chip structure, so as to achieve continuous and stable far-infrared emission and generate heat energy; at the same time, the chip is wired connected through a flat cable design, and based on the existing DC synchronization technology and networking technology, wired networking between chips is performed to achieve coordinated control of different chips, so as to maximize the effect of absorbing limited energy.

Description

Technical Field

[0001] The invention belongs to the technical field of far-infrared chips, and in particular relates to a passive far-infrared chip and a chip array. Background Art

[0002] Far infrared therapy is a method of treatment using far infrared radiation. The wavelength of far infrared radiation is usually between 3 and 1000 microns. This radiation can be absorbed deep into the human skin, producing a variety of physiological effects, such as thermal effect and biological effect. The thermal effect refers to the vibration of water molecules in the body by far infrared radiation, which generates heat, thereby improving local blood circulation and relieving muscle tension and pain; the biological effect is that far infrared radiation promotes metabolism, enhances immunity, helps detoxification and accelerates the healing process.

[0003] However, currently most of the far-infrared related products on the market are in active form (plug-in / charging). There are some research directions for passive far-infrared, which mainly focus on materials.

[0004] For example, the invention patent CN101634112B authorized and announced on June 6, 2012 discloses a nano far-infrared cloth, which is mainly composed of ultra-fine powder and polyurethane resin powder to form a stable and strong nano-level far-infrared polyurethane resin powder, and then the nano-level far-infrared polyurethane resin powder and the cloth are combined by hot pressing to form a nano far-infrared cloth that releases high-efficiency far-infrared rays and has a strong far-infrared component that is strongly combined with the cloth and will not fall off after long-term washing. Various clothes and cloth products made of the nano far-infrared cloth allow users to have a health care effect while wearing or using it.

[0005] For example, the invention patent application CN110863355A published on March 6, 2020 discloses a PVC polyester coated yarn with far-infrared emission function and a preparation method thereof. By adding far-infrared emitting particles tourmaline to the PVC masterbatch, a large number of tourmaline particles are distributed in the coating layer. These tourmaline particles are distributed around the polyester filament bundle. When sunlight containing ultraviolet rays and infrared rays shines on the coated yarn, the tourmaline particles can absorb ultraviolet rays and convert them into invisible far-infrared rays, which are converted into heat and emitted outward through the coating layer.

[0006] In the invention patent CN101634112B, the polyurethane resin powder itself does not have the ability to emit far infrared rays. It needs to add specific functional materials (such as far infrared emitters) to enable it to have the characteristics of emitting far infrared rays. These additives can release far infrared rays when heated or subjected to specific stimulation, thereby providing corresponding health benefits. In the invention patent application CN110863355A, far infrared rays can only be emitted outward under the irradiation of sunlight. At the same time, both of these far infrared emission directions are uncontrollable, and the washing process will inevitably have a negative impact on their performance. Summary of the invention

[0007] In view of the technical obstacles existing in the existing far-infrared therapy, the present invention proposes a passive far-infrared chip, which can radiate far-infrared rays stably for a long time without the need for an external power supply, and has a small structure and is easy to carry and use.

[0008] The present invention protects a passive far-infrared chip, including an energy capture module and a far-infrared emission module; the energy capture module is used to capture far-infrared radiation energy from the human body and the environment as trace electric energy for driving the chip to work; the far-infrared emission module is used to generate and emit far-infrared rays of a specific band.

[0009] Furthermore, the chip is a symmetrical stacking structure, including a central control layer located in the center, and a photosensitive capacitor layer, a thermal radiation layer, a dielectric anti-reflection layer, a graphene antenna layer and a metal packaging layer arranged symmetrically to the central control layer from the inside to the outside;

[0010] The energy capture module uses the graphene antenna layer to capture far-infrared radiation energy from the human body and the environment, uses the dielectric anti-reflection layer to transmit far-infrared radiation of the required band to the thermal radiation layer, and uses the thermal radiation layer to convert thermal energy into a corresponding spectrum, which is stored in the photosensitive capacitor layer;

[0011] The far-infrared emission module uses the central control layer to control the discharge action and discharge frequency of the photosensitive capacitor layer, and the heat generated by the discharge is conducted to the graphene antenna layer, causing it to radiate infrared rays in the 8-14um band outward.

[0012] Furthermore, the thermal radiation layer and the dielectric anti-reflection layer are an integrated structure, and aluminum nitride / silicon nitride is magnetron sputtered on both sides of a tungsten sheet. The surface facing the graphene antenna layer is responsible for heat collection, and the surface facing the intermediate control layer is responsible for radiation. The tungsten sheet and the aluminum nitride film magnetron sputtered thereon are responsible for filtering out far-infrared radiation outside the required band.

[0013] Furthermore, the graphene antenna layer includes a graphene film and a microstrip antenna printed thereon, and the antenna is composed of a feeding unit and a radiation unit.

[0014] Furthermore, the microstrip antenna is tree-shaped, with the trunk being a feeding unit. One end of the trunk is located at the edge of the graphene and serves as a feeding port of the antenna, and a plurality of branches grow out of the other end as radiation units.

[0015] Furthermore, the graphene film is composed of a coated paper substrate and two graphene coating layers. The preparation process is to first spray graphene ink on the coated paper substrate to form a first graphene coating layer, and then use screen printing technology to form a second graphene film on the basis of the first graphene coating layer, and then form it through rolling.

[0016] Furthermore, the central control layer includes a coordination control logic unit for storing chip working reference parameters, including discharge time interval and discharge frequency, and controlling the chip's external far-infrared radiation accordingly.

[0017] The present invention also protects a passive far-infrared chip array, which is composed of a plurality of the above chips. The central control layer also includes a DC clock synchronization unit, which provides a clock synchronization reference for the coordination control logic unit and is used to manage the synchronization between the plurality of chips.

[0018] Furthermore, multiple chips are connected via cables to form a network.

[0019] Furthermore, the coordination control logic unit adjusts the actual working parameters of each chip in the array based on the chip working reference parameters according to whether the chip works in the networking mode.

[0020] The present invention integrates the energy capture module and the far-infrared emission module into a tiny chip through a stacked chip structure, thereby achieving continuous and stable far-infrared emission and generating heat energy. At the same time, the chips are wired through a flat cable design, and based on the existing DC synchronization technology and networking technology, wired networking is performed between the chips to achieve coordinated control of different chips, thereby absorbing limited energy and maximizing its effectiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a functional block diagram of the passive far-infrared chip disclosed in the present invention;

[0022] Figure 2a , Figure 2b Schematic diagram of chip configuration and size in Example 1;

[0023] Figure 3 Schematic diagram of the chip stacking structure in Example 1;

[0024] Figure 4 Schematic diagram of the tree antenna in Example 1;

[0025] Figure 5 Schematic diagram of the operation of the anti-reflection-radiation layer in Example 1;

[0026] Figure 6 Schematic diagram of cable configuration and dimensions in Example 2. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The embodiments of the present invention are provided for the purpose of illustration and description, and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses. Example 1

[0028] The human body and the environment are full of far-infrared radiation energy. The human body temperature is usually around 37°C, which releases heat in the form of far-infrared radiation; surrounding objects (such as buildings, the ground, etc.) also absorb and radiate far-infrared energy, especially under sunlight, which affects the ambient temperature and comfort.

[0029] The present invention absorbs and stores far-infrared radiation from the human body and the environment to power the chip and maintain its far-infrared emission. Therefore, the passive far-infrared chip disclosed in this embodiment includes an energy capture module and a far-infrared emission module; the energy capture module is used to capture the far-infrared radiation energy from the human body and the environment as a trace amount of electric energy to drive the chip to work; the far-infrared emission module is used to generate and emit far-infrared rays of a specific band, such as Figure 1 shown.

[0030] In daily life, there are many objects that can absorb far-infrared radiation, but how to store and utilize it is the focus of this invention. This invention integrates energy capture and infrared emission functions on a tiny chip. The finished chip after packaging is as follows: Figure 2a , Figure 2b As shown, the overall shape is circular, and the diameter can be made into millimeter level as needed.

[0031] The chip is a symmetrical stacked structure, such as Figure 3 As shown, it includes a central control layer 101 located in the center, and a photosensitive capacitor layer 102, a thermal radiation layer 103, a dielectric anti-reflection layer 104, a graphene antenna layer 105 and a metal packaging layer (not shown in the figure) arranged symmetrically from the inside to the outside of the central control layer.

[0032] The energy capture module uses the graphene antenna layer 105 to capture far-infrared radiation energy from the human body and the environment, uses the dielectric anti-reflection layer 104 to transmit far-infrared radiation of the required band to the thermal radiation layer 103, and uses the thermal radiation layer 103 to convert thermal energy into a corresponding spectrum and store it in the photosensitive capacitor layer 102. In this embodiment, the photosensitive capacitor layer adopts a flexible thin film capacitor.

[0033] The far-infrared emission module uses the central control layer 101 to control the discharge action and discharge frequency of the photosensitive capacitor layer 102, and the heat generated by the discharge is conducted to the graphene antenna layer 105, so that it radiates infrared rays in the 8-14 um band outward.

[0034] Graphene is a material composed of a single layer of carbon atoms arranged in a two-dimensional honeycomb structure. It has extremely high thermal conductivity and is very effective in absorbing and conducting heat. When graphene is heated, it can emit far infrared rays outward, and the far infrared ray band it emits is affected by many factors, such as the graphene base material, graphene doping elements, heating temperature, etc. Therefore, through the integration of different factors, it can emit far infrared rays of the required band. The required band of the present invention is 8-14um.

[0035] As can be seen from the above, the energy capture module and the far-infrared emission module in this embodiment are not two independent modules, but are integrated together. The graphene antenna layer not only absorbs the far-infrared radiation energy from the human body and the environment, but also radiates far-infrared energy outward when heated. The graphene antenna layer plays a vital role in the present invention.

[0036] In this embodiment, the graphene antenna layer includes a graphene film and a microstrip antenna printed thereon, and the antenna is composed of a feeding unit (a part responsible for transmitting signals from a transmitter or a receiver to the antenna) and a radiation unit. Figure 4 As shown, the microstrip antenna is preferably in a tree shape, and the trunk is used as a feeding unit, one end of the trunk is located at the edge of the graphene, serving as the feeding port of the antenna, and the other end grows a number of branches as radiation units. The branch-shaped dispersed radiation is more conducive to the absorption and emission of far-infrared rays.

[0037] The graphene film is composed of a coated paper substrate and two graphene coating layers. The preparation process is as follows: firstly, graphene ink is sprayed on the coated paper substrate to form a first graphene coating layer, and then a second graphene film is formed on the basis of the first graphene coating layer by screen printing technology, and then the second graphene film is formed by rolling after molding.

[0038] The thermal radiation layer and the dielectric anti-reflection layer can be independent structures, but in this embodiment, the two are integrated structures and can be collectively referred to as an anti-reflection-radiation layer. Aluminum nitride / silicon nitride is magnetron sputtered on both sides of a tungsten sheet. The surface facing the graphene antenna layer is responsible for heat collection, and the surface facing the intermediate control layer is responsible for radiation. The tungsten sheet and the aluminum nitride film magnetron sputtered thereon are responsible for filtering out far-infrared radiation outside the required band. It is easy to know that the anti-reflection-radiation layer plays the same role in both the absorption and emission of far-infrared rays, but the surface of action is different. Refer to Figure 5 shown.

[0039] Far-infrared radiation from the human body and the environment exists in real time, so the chip can continuously absorb its energy through the graphene antenna layer, store it in the capacitor layer, and then release it. When to release and how to release it appropriately are the core tasks of the central control layer. In this embodiment, the central control layer includes a coordination control logic unit for storing chip working reference parameters, including discharge time intervals and discharge frequencies, and controls the chip's external far-infrared radiation accordingly. Since it takes a certain amount of time to charge the capacitor, the chip does not always emit far-infrared rays to the outside, but controls a certain time interval so that the capacitor layer can store enough electricity. Due to process deviations during manufacturing, the time required to fully charge the capacitor layer of different chips is also different. For this reason, each chip will be micro-calibrated when it leaves the factory, and its working reference parameters will be pre-stored according to its own situation. When a single chip is working, the central control layer works according to the working reference parameters. Example 2

[0040] The far-infrared radiation energy generated by a single chip is relatively small. If each chip works independently and controls the discharge operation separately, a focusing effect cannot be formed. To this end, this embodiment provides a passive far-infrared chip array, which is composed of multiple chips described in Embodiment 1.

[0041] The central control layer also includes a DC clock synchronization unit, which provides a clock synchronization reference for the coordination control logic unit and is used to manage the synchronization between multiple chips, that is, to ensure that the chips in the array discharge at the same time, so as to activate human tissue cells, promote blood circulation, accelerate metabolism, etc. DC clock synchronization logic belongs to the prior art, and is not the core technology protected by the present invention, and will not be described here.

[0042] To facilitate the association between different chips, multiple chips are connected by cables to form a network. There are many types of cables. Figure 6 A schematic diagram of some cable structures and dimensions is given. Figure 6 The upper left is a schematic diagram of a chip with a diameter of 26mm. The black dots on it are relatively fixed with the black dots on the cable, so multiple chips fixed on the cable can achieve wired connection.

[0043] In the networking mode, different chips may also have different working reference parameters. In this regard, the present embodiment adjusts the actual working parameters of each chip in the array based on the working reference parameters of the chip through the coordination control logic unit. For example, in the networking mode, the discharge interval is extended by 10% based on the working reference parameters of a certain chip, and the other parameters remain unchanged at the reference values.

[0044] In order to facilitate identification of different chips in the networking mode, a certain encoding logic may be used to encode the chip, and the encoding logic and the chip's own encoding may be built into the coordination control logic unit.

[0045] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field and related fields without creative work should fall within the scope of protection of the present invention.

Claims

1. A passive far-infrared chip, characterized in that: It includes an energy capture module and a far-infrared emission module; the energy capture module is used to capture the far-infrared radiation energy from the human body and the environment as a trace amount of electric energy for the operation of the drive chip; the far-infrared emission module is used to generate and emit far-infrared rays in the 8-14um band; The chip has a symmetrical stacking structure, including a central control layer located in the center, and a photosensitive capacitor layer, a thermal radiation layer, a dielectric anti-reflection layer, a graphene antenna layer and a metal packaging layer arranged symmetrically from the inside to the outside of the central control layer; The energy capture module uses the graphene antenna layer to capture far-infrared radiation energy from the human body and the environment, uses the dielectric anti-reflection layer to transmit far-infrared radiation of the required band to the thermal radiation layer, and uses the thermal radiation layer to convert thermal energy into a corresponding spectrum, which is stored in the photosensitive capacitor layer; The far-infrared emission module uses the central control layer to control the discharge action and discharge frequency of the photosensitive capacitor layer, and the heat generated by the discharge is conducted to the graphene antenna layer, causing it to radiate infrared rays in the 8-14um band outward.

2. The passive far-infrared chip according to claim 1, characterized in that: The thermal radiation layer and the dielectric anti-reflection layer are an integrated structure, and aluminum nitride / silicon nitride is magnetron sputtered on both sides of a tungsten sheet. The surface facing the graphene antenna layer is responsible for heat collection, and the surface facing the intermediate control layer is responsible for radiation. The tungsten sheet and the aluminum nitride film magnetron sputtered thereon are responsible for filtering out far-infrared radiation outside the required band.

3. The passive far-infrared chip according to claim 1, characterized in that: The graphene antenna layer comprises a graphene film and a microstrip antenna printed thereon, and the antenna is composed of a feeding unit and a radiation unit.

4. The passive far-infrared chip according to claim 3, characterized in that: The microstrip antenna is in a tree shape, with the trunk being a feeding unit. One end of the trunk is located at the edge of the graphene and serves as a feeding port of the antenna, and a plurality of branches grow out of the other end as radiation units.

5. The passive far-infrared chip according to claim 3, characterized in that: The graphene film consists of a coated paper substrate and two graphene coating layers.

6. The passive far-infrared chip according to claim 1, characterized in that: The central control layer includes a coordination control logic unit, which is used to store chip working reference parameters, including discharge time interval and discharge frequency, and control the chip's external far-infrared radiation accordingly.

7. A passive far-infrared chip array, characterized in that: The central control layer is composed of multiple chips as described in claim 6, and the central control layer also includes a DC clock synchronization unit, which provides a clock synchronization reference for the coordination control logic unit and is used to manage the synchronization between multiple chips.

8. The passive far-infrared chip array according to claim 7, characterized in that: Multiple chips are connected via cables to form a network.

9. The passive far-infrared chip array according to claim 8, characterized in that: The coordination control logic unit adjusts the actual working parameters of each chip in the array based on the chip working reference parameters according to whether the chip works in the networking mode.

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