Monocrystalline silicon wafer grinding device and grinding method thereof

Abstract

The invention discloses a monocrystalline silicon wafer grinding device and a monocrystalline silicon wafer grinding method, belongs to the technical field of monocrystalline silicon wafer machining, and aims to solve the problems that in the grinding process, when the vacuum degree is reduced, the adsorption force on a monocrystalline silicon wafer is insufficient, and the monocrystalline silicon wafer can be displaced. A first vacuumizing assembly and a power assembly are fixedly installed on the inner wall of a workbench, a rotating assembly is rotationally installed on the bottom face of an inner cavity of the workbench in a penetrating mode, a wafer bearing assembly is fixedly installed on the top face of the rotating assembly, and a vacuum cylinder is fixedly installed on the top face of the rotating assembly in a communicating mode; and a second vacuumizing assembly is installed in an inner cavity of the vacuum cylinder in an embedded and sliding mode, and an air exhaust assembly and a positioning assembly are further fixedly installed on the top face of the rotating assembly. And the inside of the wafer bearing table can be recovered to the original negative pressure degree in a short time, and the monocrystalline silicon wafer is firmly sucked again to be continuously polished.

Description

Technical Field

[0001] The invention relates to the technical field of single crystal silicon wafer processing, and in particular to a single crystal silicon wafer grinding device and a grinding method thereof. Background Art

[0002] Single crystal silicon wafer is a good semiconductor material and a type of wafer. It has the characteristics of high hardness and great brittleness. It can be used in computers, electronic products, solar cells and other fields. In the process of making semiconductor devices, single crystal silicon wafers need to be ground. When grinding single crystal silicon wafers, the vacuum negative pressure principle is used to adsorb the single crystal silicon wafer on the wafer table, and then the single crystal silicon wafer is ground by the grinding wheel. During the grinding process, if there is a problem with the vacuum degree, the single crystal silicon wafer is prone to shifting, which will affect the grinding effect.

[0003] Chinese patent CN117340711B discloses a single crystal silicon wafer grinding processing device and a grinding processing method thereof, comprising a workbench, wherein a plurality of supports are fixedly connected to the edge of the lower end of the workbench, the output end of the motor 1 passes through the workbench and is fixedly connected to the single crystal silicon wafer fastener, a waste collection part is arranged below the workbench, a transverse moving part is arranged at the upper end of the workbench, a longitudinal moving part is arranged at the upper end of the supporting plate, a motor 2 is arranged on the longitudinal moving part, and the output end of the motor 2 is fixedly connected to the grinding wheel. The invention solves the problem that the existing single crystal silicon wafer grinding processing device may cause damage to the two side walls where the single crystal silicon wafer is fastened.

[0004] Although the above-mentioned prior art solves the problem that the existing single crystal silicon wafer grinding and processing device may cause damage to the two side walls of the single crystal silicon wafer, the above-mentioned single crystal silicon wafer grinding and processing device is still implemented by using the negative pressure adsorption principle, and the above-mentioned single crystal silicon wafer grinding and processing device does not have preventive measures. During the grinding process, when the vacuum degree decreases, it will lead to insufficient adsorption force on the single crystal silicon wafer, and the single crystal silicon wafer will be displaced, which will affect the grinding effect. Some single crystal silicon wafer grinding and processing devices are to open a groove corresponding to the shape of the single crystal silicon wafer on the wafer holding table, put the single crystal silicon wafer into the groove, and then fix the single crystal silicon wafer by vacuum adsorption. Then, when the vacuum degree decreases, the grinding will generate radial force on the single crystal silicon wafer, which will cause the single crystal silicon wafer to displace in the groove and collide with the inner wall of the groove, causing the edge of the single crystal silicon wafer to collapse, resulting in material waste.

[0005] In view of the above problems, a single crystal silicon wafer grinding device and a grinding method thereof are proposed. Summary of the invention

[0006] The purpose of the present invention is to provide a single crystal silicon wafer grinding processing device and a grinding processing method thereof. By using this device to work, the problem that when the vacuum degree decreases during the grinding process in the above background, it will lead to insufficient adsorption force on the single crystal silicon wafer, the single crystal silicon wafer will be displaced, which will affect the grinding effect, and cause the edge of the single crystal silicon wafer to collapse, resulting in material waste.

[0007] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a single crystal silicon wafer grinding processing device, comprising a workbench and a revolving door rotatably installed on the workbench, a control panel is arranged on the side wall at the upper end of the workbench, a grinding mechanism is arranged on the top surface of the inner cavity of the workbench, a vacuum pumping component 1 and a power component are fixedly installed on the inner wall of the workbench respectively, a rotating component is rotatably installed through the bottom surface of the inner cavity of the workbench, the rotating component and the vacuum pumping component 1 are sealed and rotatably connected, a wafer holding component is fixedly installed on the top surface of the rotating component, a single crystal silicon wafer is adsorbed on the wafer holding component, a vacuum cylinder is fixedly installed on the top surface of the rotating component, a vacuum pumping component 2 is embedded and slidably installed in the inner cavity of the vacuum cylinder, the wafer holding component, the vacuum pumping component 2, the vacuum cylinder and the rotating component are sealed and connected in sequence, an exhaust component and a positioning component are also fixedly installed on the top surface of the rotating component respectively, and the vacuum pumping component 2 is fixedly connected to the exhaust component and the positioning component respectively.

[0008] Furthermore, the workbench includes a table body, a placement chamber is provided inside the table body, and a vacuum assembly and a power assembly are fixedly installed in the inner cavity of the placement chamber; The vacuum pump assembly 1 includes a vacuum pump fixedly mounted on the bottom surface of the inner cavity of the storage bin, and the vacuum pump is connected to the rotating assembly via an air pipe 1; The power assembly includes a motor fixedly mounted on the top surface of the storage bin, and the output end of the motor is fixedly connected to a driving gear 1.

[0009] Furthermore, the rotating component includes a driven gear 1 that is rotatably installed on the top surface of the inner cavity of the placement bin, the driven gear 1 is meshingly connected with the driving gear 1, a turntable is sealed and fixedly installed on the top surface of the driven gear 1, a sealed bearing is sealed and rotatably installed on the bottom surface of the driven gear 1, and an end of the air pipe 1 away from the vacuum pump is sealed and rotatably installed on the sealed bearing.

[0010] Furthermore, the wafer support assembly includes a wafer support platform arranged above the turntable, and the wafer support platform and the turntable are fixedly connected via a plurality of connecting rods.

[0011] Furthermore, the vacuum cylinder comprises a cylinder body which is sealed and connected and fixedly mounted on the top surface of the turntable, and a pair of limit blocks are fixedly mounted on the inner wall of the upper end of the cylinder body.

[0012] Furthermore, the vacuum pumping component 2 includes a sliding column, on the bottom and top surfaces of which a first piston and a second piston are fixedly mounted respectively, the first piston is slidably mounted in the inner cavity of the cylinder, and the first piston is arranged below the limit block, a pair of sliding grooves are opened on the side walls of the sliding column, the limit block is embedded and slidably arranged in the inner cavity of the sliding groove, and the second piston and the limit block are elastically connected by a spring 1.

[0013] Furthermore, the vacuum assembly includes a compression cylinder fixedly mounted on the top surface of the turntable and a third piston slidably mounted in the inner cavity of the compression cylinder. A pressure rod is fixedly mounted on the outer wall of the sliding column. The pressure rod and the third piston are fixedly connected via a connecting shaft. A one-way air outlet valve and a one-way air inlet valve are respectively fixedly mounted on the outer walls on both sides of the bottom of the compression cylinder. The one-way air inlet valve and the wafer support table are connected via air pipe 2.

[0014] Furthermore, the positioning assembly includes a mounting frame fixedly mounted on the top surface of the turntable, on which a driving gear 2 and a driven gear 2 are respectively embedded and rotatably mounted, and the driving gear 2 and the driven gear 2 are meshingly connected, an L-shaped rack is fixedly mounted on the outer wall of the sliding column, and the L-shaped rack is meshingly connected to the driving gear 2, a lifting plate is vertically slidably mounted on the mounting frame, and a toothed plate and a top plate are respectively embedded and vertically slidably mounted on the inner side walls of the lifting plate, the top plate is arranged above the toothed plate, and the toothed plate and the top plate are elastically connected by a second spring, a splint is embedded and horizontally slidably mounted on the inner side wall at the top of the lifting plate, and the splint and the side wall of the inner cavity of the lifting plate are elastically connected by a third spring.

[0015] Furthermore, the mounting frame includes a frame body and an L-shaped stopper fixedly mounted on the side wall of the frame body, a contact 1 is embedded and fixedly mounted on the bottom surface of the L-shaped stopper, and a vertical slide rail is also provided on the frame body; The lifting plate includes a plate body, which is vertically slidably installed on a vertical slide rail. A square stopper is fixedly installed on the side wall of the plate body, and the square stopper is arranged directly below the L-shaped stopper. Contact 2 is embedded and fixedly installed on the top surface of the square stopper, and contact 2 is arranged directly below contact 1. An embedded slide rail is opened on the inner side wall of the plate body, and the toothed plate is slidably installed in the embedded slide rail.

[0016] The present invention also proposes another technical solution: a grinding method applied to the single crystal silicon wafer grinding device, comprising the following steps: S1: Set the operating parameters through the control panel; S2: placing the single crystal silicon wafer on a wafer stage; S3: starting the vacuum pumping component 1 to make the inside of the vacuum cylinder into a negative pressure environment, and through the operation of the vacuum pumping component 2, further making the inside of the wafer stage into a negative pressure environment, so that the single crystal silicon wafer is firmly adsorbed; S4: starting the power assembly to drive the rotating assembly, the vacuum cylinder, the second vacuum assembly, the wafer holding assembly and the single crystal silicon wafer to rotate synchronously; S5: Start the grinding mechanism to grind the single crystal silicon wafer; S6: After polishing, remove the single crystal silicon wafer.

[0017] Compared with the prior art, the present invention has the following beneficial effects: The grinding device of the present invention, even if the vacuum degree inside the wafer holding table decreases during the grinding process and the single crystal silicon wafer cannot be firmly sucked, the original negative pressure inside the wafer holding table can be immediately restored to the original level in a short time through the cooperation of the vacuum pumping component 2 and the exhaust component, and the single crystal silicon wafer can be firmly sucked again for further grinding, and the whole process can be completed without stopping the machine, thereby improving the grinding efficiency; after the grinding work of a single crystal silicon wafer is completed, the equipment is inspected and repaired, which reduces the impact on the grinding effect of the single crystal silicon wafer, and also reduces the loss rate of the single crystal silicon wafer, thereby improving the yield rate; through the cooperation between the vacuum pumping component 2, the exhaust component and the positioning component, the displacement distance of the single crystal silicon wafer in the clamping plate can be greatly reduced, thereby reducing the number of times the single crystal silicon wafer collides with the inner wall of the clamping plate, and quickly restoring the original negative pressure inside the wafer holding table, which can offset a part of the radial force generated by grinding on the single crystal silicon wafer, thereby alleviating the problem of edge collapse of the single crystal silicon wafer and material waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic diagram of the installation positions of the vacuum assembly 1 and the power assembly of the present invention; Figure 3 It is a schematic diagram of the connection relationship of various components of the present invention; Figure 4 For the present invention Figure 3 A magnified image of point A; Figure 5 It is a schematic cross-sectional view of the overall structure of the present invention; Figure 6 For the present invention Figure 5 A magnified view of point B; Figure 7 It is a schematic diagram of the installation positions of the air extraction component and the positioning component of the present invention; Figure 8 It is a cross-sectional schematic diagram of the rotating assembly, the vacuum cylinder, the second vacuum assembly and the positioning assembly of the present invention; Fig. 9 For the present invention Figure 8 Enlarged view of point C; Fig.10 For the present invention Figure 8The enlarged view of point D; Fig.11 It is a three-dimensional structural schematic diagram of the positioning assembly of the present invention; Fig.12 For the present invention Fig.11 The enlarged view of point E; Fig.13 A top view of the positioning assembly of the present invention; Fig.14 For the present invention Fig.13 The enlarged view of point F; Fig.15 It is a disassembly schematic diagram of the positioning assembly of the present invention.

[0019] In the figure: 1, workbench; 11, table body; 12, storage bin; 2, revolving door; 3, control panel; 4, grinding mechanism; 5, vacuum assembly 1; 51, vacuum pump; 52, air pipe 1; 6, power assembly; 61, motor; 62, driving gear 1; 7, rotating assembly; 71, driven gear 1; 72, sealed bearing; 73, turntable; 8, wafer assembly; 81, wafer table; 82, connecting rod; 9, single crystal silicon wafer; 10, vacuum cylinder; 101, cylinder body; 102, limit block; 20, vacuum assembly 2; 201, sliding column; 202, first piston; 203, second piston; 204, spring 1; 205, slide groove; 30, vacuum assembly; 301, compression cylinder; 302, third piston; 303, connecting shaft; 304, pressure rod; 305, one-way air outlet valve; 306, one-way air inlet valve; 307, air pipe 2; 40, positioning assembly; 401, mounting frame; 4011, frame body; 4012, L-shaped stopper; 4013, contact 1; 4014, vertical slide rail; 402, driving gear 2; 403, driven gear 2; 404, L-shaped rack; 405, lifting plate; 4051, plate body; 4052, square stopper; 4053, contact 2; 4054, embedded slide rail; 406, tooth plate; 407, top plate; 408, spring 2; 409, splint; 420, spring 3. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In order to solve the technical problem that when the vacuum degree decreases during the grinding process, the adsorption force on the single crystal silicon wafer 9 will be insufficient, the single crystal silicon wafer 9 will be displaced, and the grinding effect will be affected, such as Figure 1 - Fig. 9As shown, the following preferred technical solutions are provided: A single crystal silicon wafer grinding processing device comprises a workbench 1 and a revolving door 2 rotatably mounted on the workbench 1. The setting of the workbench 1 supports and fixes a large number of components, and the revolving door 2 shields the internal space of the workbench 1, which not only looks beautiful but also protects the components inside the workbench 1. A control panel 3 is arranged on the side wall at the upper end of the workbench 1 for setting grinding parameters and controlling the orderly operation of various components. A grinding mechanism 4 is arranged on the top surface of the inner cavity of the workbench 1 for realizing the grinding operation. A vacuum assembly 5 and a power assembly 6 are respectively fixedly mounted on the inner wall of the workbench 1. The vacuum assembly 5 plays a role of vacuuming, and the power assembly 6 is used to provide power output. A rotating assembly 7 is rotatably mounted on the bottom surface of the inner cavity of the workbench 1. The rotating assembly 7 is rotatably connected to the vacuum assembly 5 in a sealed rotatable manner. The sealed rotatable connection is adopted for connection to prevent air leakage at the connection between the rotating assembly 7 and the vacuum assembly 5, thereby affecting the vacuum degree.

[0022] A wafer support component 8 is fixedly installed on the top surface of the rotating component 7, and a single crystal silicon wafer 9 is adsorbed on the wafer support component 8. A vacuum cylinder 10 is connected and fixedly installed on the top surface of the rotating component 7. A vacuum pumping component 20 is embedded and slidably installed in the inner cavity of the vacuum cylinder 10. The wafer support component 8, the vacuum pumping component 20, the vacuum cylinder 10 and the rotating component 7 are sealed and connected in sequence. The interior of the vacuum cylinder 10 is changed into a negative pressure environment by using the vacuum pumping component 15. At this time, due to the reduction of the air pressure inside the vacuum cylinder 10, under the action of the external atmospheric pressure, the vacuum pumping component 20 slides downward inside the vacuum cylinder 10, and the vacuum pumping component 20 is pressed against the vacuum cylinder 10. During the sliding process of the second component 20, the interior of the wafer support component 8 will be evacuated, so that the interior of the wafer support component 8 becomes a negative pressure environment, and the single crystal silicon wafer 9 can be adsorbed on the wafer support component 8. In the subsequent grinding process, there will be no displacement, which is conducive to the smooth progress of the grinding process. The power component 6 drives the rotating component 7, the vacuum cylinder 10, the vacuum component 20 and the wafer support component 8 to rotate synchronously. Since the single crystal silicon wafer 9 is adsorbed on the wafer support component 8, the single crystal silicon wafer 9 rotates synchronously with the wafer support component 8. At the same time, the grinding mechanism 4 rotates in the opposite direction to the single crystal silicon wafer 9, which is conducive to improving the grinding efficiency.

[0023] The top surface of the rotating component 7 is also fixedly mounted with an exhaust component 30 and a positioning component 40, and the vacuum component 20 is fixedly connected to the exhaust component 30 and the positioning component 40, respectively. When the vacuum component 1 5 fails or other reasons cause the negative pressure level in the vacuum cylinder 10 to decrease, the vacuum component 20 moves upward in the inner cavity of the vacuum cylinder 10 under the action of the rebound force. At this time, the negative pressure level in the inner cavity of the sheet-carrying component 8 decreases. During the upward movement of the vacuum component 20, it will simultaneously drive the exhaust component 30 to operate and exhaust the inner cavity of the sheet-carrying component 8 to restore the original negative pressure level inside the sheet-carrying component 8. There will be a time gap in the process of the vacuum degree inside the wafer support component 8 decreasing and recovering to the original vacuum degree through the exhaust component 30. In order to prevent the single crystal silicon wafer 9 from shifting or flying out of the wafer support component 8 during this time gap, the present invention provides a positioning component 40; when the vacuum exhaust component 20 moves upward, it will also synchronously drive the positioning component 40 to move upward to position the single crystal silicon wafer 9 to prevent the negative pressure inside the wafer support component 8 from being insufficiently adsorbed on the single crystal silicon wafer 9 before it is recovered, causing the single crystal silicon wafer 9 to move on the wafer support component 8 or fly out of the wafer support component 8, resulting in poor grinding effect or even damage to the single crystal silicon wafer 9.

[0024] The workbench 1 includes a table body 11, and a storage bin 12 is provided inside the table body 11. The vacuum pumping component 5 and the power component 6 are fixedly installed in the inner cavity of the storage bin 12.

[0025] The vacuum assembly 5 includes a vacuum pump 51 fixedly mounted on the bottom surface of the inner cavity of the placement bin 12, and the vacuum pump 51 is connected to the rotating assembly 7 via an air pipe 52.

[0026] The power assembly 6 includes a motor 61 fixedly mounted on the top surface of the storage bin 12 , and an output end of the motor 61 is fixedly connected to a driving gear 1 62 .

[0027] The rotating component 7 includes a driven gear 71 that is rotatably installed on the top surface of the inner cavity of the placement bin 12. The driven gear 71 is meshedly connected with the driving gear 62. A turntable 73 is sealed and connected and fixedly installed on the top surface of the driven gear 71. A sealed bearing 72 is sealed and rotatably installed on the bottom surface of the driven gear 71. The end of the air pipe 52 away from the vacuum pump 51 is sealed and rotatably installed on the sealed bearing 72. The motor 61 drives the turntable 73 and the sealed bearing 72 to rotate synchronously through the driving gear 62 and the driven gear 71. The vacuum pump 51 changes the interior of the vacuum cylinder 10 into a negative pressure environment through the air pipe 52, the sealed bearing 72, the driven gear 71 and the turntable 73, so that the vacuum assembly 20 slides downward in the vacuum cylinder 10, and the interior of the wafer assembly 8 is changed into a negative pressure environment, so that the single crystal silicon wafer 9 can be adsorbed on the wafer assembly 8 for subsequent grinding.

[0028] The wafer support assembly 8 includes a wafer support table 81 arranged above the turntable 73. The wafer support table 81 and the turntable 73 are fixedly connected by a plurality of connecting rods 82. The wafer support table 81 can support the single crystal silicon wafer 9. When the inside of the wafer support table 81 becomes a negative pressure state, the single crystal silicon wafer 9 can be firmly adsorbed on the surface of the wafer support table 81 to prevent the single crystal silicon wafer 9 from shifting during the grinding process.

[0029] The vacuum cylinder 10 includes a cylinder body 101 which is sealed and fixedly mounted on the top surface of the turntable 73. A pair of limit blocks 102 are fixedly mounted on the inner wall of the upper end of the cylinder body 101. The limit blocks 102 limit the vacuum pumping component 20 to prevent the vacuum pumping component 20 from detaching from the inside of the cylinder body 101.

[0030] The vacuum pumping component 20 includes a slide column 201, on the bottom and top surfaces of which a first piston 202 and a second piston 203 are fixedly mounted respectively. The first piston 202 is slidably mounted in the inner cavity of the cylinder 101, and the first piston 202 is arranged below the limit block 102. A pair of slide grooves 205 are provided on the side walls of the slide column 201, and the limit block 102 is embedded and slidably arranged in the inner cavity of the slide groove 205. The second piston 203 and the limit block 102 are elastically connected via a spring 204. The spring 204 resets the vacuum pumping component 20, and the spring 204 is a high-strength and powerful spring with sufficient elastic force to drive the vacuum pumping component 30 and the positioning component 40 to operate.

[0031] The vacuum assembly 30 includes a compression cylinder 301 fixedly mounted on the top surface of the turntable 73 and a third piston 302 slidably mounted in the inner cavity of the compression cylinder 301, a pressure rod 304 is fixedly mounted on the outer wall of the sliding column 201, the pressure rod 304 and the third piston 302 are fixedly connected via a connecting shaft 303, and a one-way air outlet valve 305 and a one-way air inlet valve 306 are fixedly mounted on the outer walls on both sides of the bottom of the compression cylinder 301, and the one-way air inlet valve 306 is connected to the wafer support table 81 via an air pipe 2 307.

[0032] Specifically, when the grinding device is operating normally, the vacuum assembly 5 is started to turn the interior of the cylinder 101 into a negative pressure environment. Under the action of the external atmospheric pressure, the first piston 202 slides downward inside the cylinder 101. During the sliding process of the first piston 202, the second piston 203 is driven to slide downward in the inner cavity of the wafer table 81 through the sliding column 201, and the interior of the wafer assembly 8 is evacuated, so that the interior of the wafer table 81 becomes a negative pressure environment, and the single crystal silicon wafer 9 can be adsorbed on the wafer table 81. In the subsequent grinding process, the single crystal silicon wafer 9 will not be displaced, which is conducive to the smooth progress of the grinding process.

[0033] When the vacuum assembly 5 fails or other reasons cause the negative pressure level in the cylinder 101 to decrease, under the action of the rebound force of the spring 1 204, the first piston 202 moves upward in the inner cavity of the cylinder 101. At the same time, the first piston 202 will drive the second piston 203 to slide upward in the inner cavity of the wafer table 81 through the sliding column 201. At this time, the negative pressure level in the inner cavity of the wafer table 81 decreases, but in the process of the sliding column 201 moving upward, it will drive the third piston 302 to slide upward in the inner cavity of the compression cylinder 301 through the pressure rod 304 and the connecting shaft 303, and continue to evacuate the interior of the wafer table 81 through the one-way air inlet valve 306 and the air pipe 2 307 to restore the original negative pressure level inside the wafer table 81. The whole process is very short, which minimizes the impact on subsequent grinding.

[0034] With this design, during the grinding process, when the vacuum degree inside the wafer stage 81 decreases and the single crystal silicon wafer 9 cannot be firmly sucked, the vacuum pumping component 20 quickly rebounds and resets, and simultaneously drives the exhaust component 30 to operate, and exhausts the inner cavity of the wafer stage 81 to restore the original negative pressure level inside the wafer stage 81, and then quickly and firmly sucks the single crystal silicon wafer 9 again to maintain the normal progress of the grinding work. Under normal circumstances, when the vacuum degree inside the wafer stage 81 decreases and the single crystal silicon wafer 9 cannot be firmly sucked, the machine will be shut down for maintenance, which not only affects the grinding efficiency, but also affects the grinding efficiency of the same single crystal silicon wafer 9 after the grinding is interrupted. However, even if the vacuum degree inside the wafer table 81 decreases during the grinding process and the single crystal silicon wafer 9 cannot be firmly sucked, the grinding device of the present invention can restore the original negative pressure inside the wafer table 81 in a short time through the cooperation of the vacuum pumping component 20 and the exhaust component 30, so that the single crystal silicon wafer 9 can be firmly sucked again for further grinding, and the whole process can be completed without stopping the machine, thereby improving the grinding efficiency. After the grinding work of a single crystal silicon wafer 9 is completed, the equipment can be repaired to reduce the influence on the grinding effect of the single crystal silicon wafer 9, and at the same time, the loss rate of the single crystal silicon wafer 9 is reduced, thereby improving the yield rate.

[0035] In order to solve the technical problem that when the vacuum degree is reduced, the grinding will generate radial force on the single crystal silicon wafer 9, which will cause the single crystal silicon wafer 9 to move in the clamping plate 409 and collide with the inner wall of the clamping plate 409, causing the edge of the single crystal silicon wafer 9 to collapse, as shown in FIG. Figure 8 - Fig.15 As shown, the following preferred technical solutions are provided: The positioning assembly 40 includes a mounting frame 401 fixedly mounted on the top surface of the turntable 73, and a driving gear 2 402 and a driven gear 2 403 are respectively embedded and rotatably mounted on the mounting frame 401, and the driving gear 2 402 and the driven gear 2 403 are meshingly connected. An L-shaped rack 404 is fixedly mounted on the outer wall of the sliding column 201, and the L-shaped rack 404 is meshingly connected with the driving gear 2 402. A lifting plate 405 is vertically slidably mounted on the mounting frame 401, and a tooth plate 406 and a top plate 407 are respectively embedded and vertically slidably mounted on the inner side walls of the lifting plate 405, and the top plate 407 is arranged above the tooth plate 406, and the tooth plate 406 and the top plate 407 are elastically connected by a spring 2 408, and a clamping plate 409 is embedded and horizontally slidably mounted on the inner side wall of the top end of the lifting plate 405, and the clamping plate 409 and the side wall of the inner cavity of the lifting plate 405 are elastically connected by a spring 3 420.

[0036] The mounting frame 401 includes a frame body 4011 and an L-shaped stopper 4012 fixedly mounted on the side wall of the frame body 4011 , a contact 1 4013 is embedded and fixedly mounted on the bottom surface of the L-shaped stopper 4012 , and a vertical slide rail 4014 is also provided on the frame body 4011 .

[0037] The lifting plate 405 includes a plate body 4051, which is vertically slidably installed on the vertical slide rail 4014. A square stop block 4052 is fixedly installed on the side wall of the plate body 4051, and the square stop block 4052 is arranged directly below the L-shaped stop block 4012. A contact 2 4053 is embedded and fixedly installed on the top surface of the square stop block 4052, and the contact 2 4053 is arranged directly below the contact 1 4013. An embedded slide rail 4054 is opened on the inner side wall of the plate body 4051, and the tooth plate 406 is slidably installed in the embedded slide rail 4054.

[0038] Specifically, when the vacuum pumping component 5 fails or other reasons cause the negative pressure in the cylinder 101 to decrease, the vacuum degree inside the wafer stage 81 will decrease, which will cause the single crystal silicon wafer 9 to shift or fly out on the wafer stage 81, affecting the smooth progress of subsequent grinding work. There is a time gap in the process of reducing the vacuum degree inside the wafer stage 81 and restoring the vacuum degree inside the wafer stage 81 to the original vacuum degree through the vacuum pumping component 30. In this time gap, in order to prevent the single crystal silicon wafer 9 from shifting or flying out of the wafer stage 81; The present invention is provided with a positioning assembly 40. When the slide column 201 moves upward, it drives the toothed plate 406 to slide upward in the embedded slide rail 4054 through the L-shaped rack 404, the second driving gear 402 and the second driven gear 403. Since the toothed plate 406 and the top plate 407 are elastically connected by the second spring 408, and the elastic force of the second spring 408 is strong enough, and since the clamping plate 409 blocks the top plate 407 in the initial state, the toothed plate 406, when sliding upward, will drive the lifting plate 405 as a whole to slide upward in the vertical slide rail 4014 under the action of the second spring 408 and the blocking action of the clamping plate 409. When the L-shaped stopper 4012 abuts against the square stopper 4052, the lifting plate 405 reaches the maximum height, and the maximum height of the lifting plate 405 will not affect the normal operation of the grinding mechanism 4. At this time, contact 1 4013 and contact 2 4053 are in contact and transmit electrical signals to control panel 3. Control panel 3 controls vacuum assembly 1 5 to stop running to prevent vacuum assembly 1 5 from being damaged more seriously or causing a greater electrical accident. When lifting plate 405 reaches the maximum height, sliding column 201 continues to drive tooth plate 406 to rise through L-shaped rack 404, driving gear 2 402 and driven gear 2 403. At this time, spring 2 408 is compressed. When the elastic force of spring 2 408 reaches a certain value, When the negative pressure level inside the wafer table 81 is restored, the wafer table 81 will not have enough adsorption force on the single crystal silicon wafer 9, causing the single crystal silicon wafer 9 to move on the wafer table 81 or fly out of the wafer assembly 8, resulting in poor grinding effect or even damage to the single crystal silicon wafer 9.

[0039] The overall process is as follows. When the vacuum degree inside the wafer table 81 decreases during the grinding process and the single crystal silicon wafer 9 cannot be firmly sucked, first, the vacuum pumping component 20 and the positioning component 40 are arranged in cooperation to quickly position the single crystal silicon wafer 9 to prevent the single crystal silicon wafer 9 from being displaced or flying out. Secondly, the vacuum pumping component 20 and the exhaust component 30 are arranged in cooperation to immediately restore the original negative pressure inside the wafer table 81 within a short period of time, so that the single crystal silicon wafer 9 is firmly sucked. Through this coordination method, the displacement distance of the single crystal silicon wafer 9 in the clamp 409 can be greatly reduced, thereby reducing the number of times the single crystal silicon wafer 9 collides with the inner wall of the clamp 409. At the same time, the original negative pressure inside the wafer table 81 can be quickly restored, which can offset a part of the radial force generated by grinding on the single crystal silicon wafer 9, thereby alleviating the problem of edge collapse of the single crystal silicon wafer and material waste.

[0040] In order to better explain the above embodiment, another embodiment is proposed: a grinding method applied to a single crystal silicon wafer grinding device, comprising the following steps: Step 1: Set the operating parameters through the control panel 3; Step 2: placing the single crystal silicon wafer 9 on the wafer stage 81; Step 3: Start the vacuum pumping component 1 5 to make the inside of the vacuum cylinder 10 into a negative pressure environment, and through the operation of the vacuum pumping component 2 20, further make the inside of the wafer stage 81 into a negative pressure environment, so that the single crystal silicon wafer 9 is firmly adsorbed; Step 4: Start the power assembly 6 to drive the rotating assembly 7, the vacuum cylinder 10, the second vacuum assembly 20, the wafer support assembly 8 and the single crystal silicon wafer 9 to rotate synchronously; Step 5: Start the polishing mechanism 4 to polish the single crystal silicon wafer 9; Step 6: After polishing is completed, remove the single crystal silicon wafer 9.

[0041] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0042] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A single crystal silicon wafer grinding device, comprising a workbench (1) and a revolving door (2) rotatably mounted on the workbench (1), a control panel (3) being arranged on the side wall at the upper end of the workbench (1), and a grinding mechanism (4) being arranged on the top surface of the inner cavity of the workbench (1), characterized in that: The inner wall of the workbench (1) is respectively fixedly mounted with a vacuum pumping component 1 (5) and a power component (6); a rotating component (7) is rotatably mounted through the bottom surface of the inner cavity of the workbench (1); the rotating component (7) and the vacuum pumping component 1 (5) are sealed and rotatably connected; a wafer carrier component (8) is fixedly mounted on the top surface of the rotating component (7); a single crystal silicon wafer (9) is adsorbed on the wafer carrier component (8); a vacuum cylinder (10) is connected and fixedly mounted on the top surface of the rotating component (7); a vacuum pumping component 2 (20) is slidably mounted in the inner cavity of the vacuum cylinder (10); the wafer carrier component (8), the vacuum pumping component 2 (20), the vacuum cylinder (10) and the rotating component (7) are sealed and connected in sequence; an air extraction component (30) and a positioning component (40) are also respectively fixedly mounted on the top surface of the rotating component (7); the vacuum pumping component 2 (20) is respectively fixedly connected to the air extraction component (30) and the positioning component (40).

2. The single crystal silicon wafer grinding device according to claim 1, characterized in that: The workbench (1) comprises a table body (11), a storage bin (12) is provided inside the table body (11), and a vacuum pumping component (5) and a power component (6) are fixedly installed in the inner cavity of the storage bin (12); The vacuum pumping component (5) comprises a vacuum pump (51) fixedly mounted on the bottom surface of the inner cavity of the storage bin (12), and the vacuum pump (51) is connected to the rotating component (7) via an air pipe (52); The power assembly (6) comprises a motor (61) fixedly mounted on the top surface of the storage bin (12), and an output end of the motor (61) is fixedly connected to a driving gear 1 (62).

3. The single crystal silicon wafer grinding device according to claim 2, characterized in that: The rotating assembly (7) comprises a driven gear 1 (71) which is rotatably mounted on the top surface of the inner cavity of the placement chamber (12); the driven gear 1 (71) is meshingly connected with the driving gear 1 (62); a turntable (73) is fixedly mounted on the top surface of the driven gear 1 (71) in a sealed connection; a sealed bearing (72) is rotatably mounted on the bottom surface of the driven gear 1 (71) in a sealed connection; and one end of the air pipe 1 (52) away from the vacuum pump (51) is sealed and rotatably mounted on the sealed bearing (72).

4. The single crystal silicon wafer grinding device according to claim 3, characterized in that: The film support assembly (8) comprises a film support platform (81) arranged above the turntable (73); the film support platform (81) and the turntable (73) are fixedly connected via a plurality of connecting rods (82).

5. The single crystal silicon wafer grinding device according to claim 4, characterized in that: The vacuum cylinder (10) comprises a cylinder body (101) which is sealed and connected and fixedly mounted on the top surface of the turntable (73); a pair of limit blocks (102) are fixedly mounted on the inner wall of the upper end of the cylinder body (101).

6. The single crystal silicon wafer grinding device according to claim 5, characterized in that: The second vacuum pumping assembly (20) comprises a slide column (201), a first piston (202) and a second piston (203) being fixedly mounted on the bottom surface and the top surface of the slide column (201), respectively; the first piston (202) is slidably mounted in the inner cavity of the cylinder (101), and the first piston (202) is arranged below the limit block (102); a pair of slide grooves (205) are provided on the side wall of the slide column (201), the limit block (102) is embedded and slidably arranged in the inner cavity of the slide groove (205), and the second piston (203) is elastically connected to the limit block (102) via a spring 1 (204).

7. The single crystal silicon wafer grinding device according to claim 6, characterized in that: The air extraction assembly (30) comprises a compression cylinder (301) fixedly mounted on the top surface of the turntable (73) and a third piston (302) slidably mounted in the inner cavity of the compression cylinder (301); a pressure rod (304) is fixedly mounted on the outer wall of the sliding column (201); the pressure rod (304) and the third piston (302) are fixedly connected via a connecting shaft (303); a one-way air outlet valve (305) and a one-way air inlet valve (306) are respectively fixedly mounted on the outer walls on both sides of the bottom of the compression cylinder (301); and the one-way air inlet valve (306) and the wafer support platform (81) are connected via a second air pipe (307).

8. The single crystal silicon wafer grinding device according to claim 7, characterized in that: The positioning assembly (40) comprises a mounting frame (401) fixedly mounted on the top surface of the turntable (73), wherein a second driving gear (402) and a second driven gear (403) are respectively embedded and rotatably mounted on the mounting frame (401), wherein the second driving gear (402) and the second driven gear (403) are meshedly connected, an L-shaped rack (404) is fixedly mounted on the outer wall of the slide column (201), wherein the L-shaped rack (404) is meshedly connected to the second driving gear (402), and a lifting gear (404) is vertically slidably mounted on the mounting frame (401). A tooth plate (406) and a top plate (407) are respectively embedded in the inner side walls of the lowering plate (405) and the lifting plate (405) and are vertically slidably mounted thereon. The top plate (407) is arranged above the tooth plate (406), and the tooth plate (406) and the top plate (407) are elastically connected via a second spring (408). A clamping plate (409) is embedded in the inner side wall at the top end of the lifting plate (405) and is horizontally slidably mounted thereon. The clamping plate (409) and the side wall of the inner cavity of the lifting plate (405) are elastically connected via a third spring (420).

9. The single crystal silicon wafer grinding device according to claim 8, characterized in that: The mounting frame (401) comprises a frame body (4011) and an L-shaped stopper (4012) fixedly mounted on a side wall of the frame body (4011); a contact point 1 (4013) is embedded and fixedly mounted on the bottom surface of the L-shaped stopper (4012); and a vertical slide rail (4014) is also provided on the frame body (4011); The lifting plate (405) comprises a plate body (4051), the plate body (4051) is vertically slidably mounted on a vertical slide rail (4014), a square stopper (4052) is fixedly mounted on the side wall of the plate body (4051), the square stopper (4052) is arranged directly below the L-shaped stopper (4012), a second contact (4053) is embedded and fixedly mounted on the top surface of the square stopper (4052), the second contact (4053) is arranged directly below the first contact (4013), an embedded slide rail (4054) is provided on the inner side wall of the plate body (4051), and the tooth plate (406) is slidably mounted in the embedded slide rail (4054).

10. A grinding method for a single crystal silicon wafer grinding device according to claim 9, characterized in that: The steps include: S1: Set the operating parameters through the control panel (3); S2: placing a single crystal silicon wafer (9) on a wafer carrier (81); S3: starting the vacuum pumping component 1 (5) so that the interior of the vacuum cylinder (10) becomes a negative pressure environment, and through the operation of the vacuum pumping component 2 (20), the interior of the wafer holding platform (81) is further changed into a negative pressure environment, so that the single crystal silicon wafer (9) is firmly adsorbed; S4: starting the power assembly (6) to drive the rotating assembly (7), the vacuum cylinder (10), the second vacuum assembly (20), the wafer support assembly (8) and the single crystal silicon wafer (9) to rotate synchronously; S5: starting the grinding mechanism (4) to grind the single crystal silicon wafer (9); S6: After polishing is completed, the single crystal silicon wafer (9) can be removed.

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