Chip thermal resistance measurement method, system, device and storage medium

Abstract

The present invention relates to the field of electronic component measurement technology, and discloses a chip thermal resistance measurement method, system, device and storage medium, wherein the method comprises acquiring thermal image data, denoising the thermal image data, constructing a chip thermal resistance function, performing chip thermal resistance testing, acquiring a chip thermal resistance standard value and analyzing the test results. This method effectively improves the thermal resistance measurement accuracy of the chip and optimizes the thermal management performance through precise steady-state thermal resistance testing, thereby solving the problems of insufficient accuracy and inaccurate description of thermal resistance characteristics in traditional measurements. Compared with the prior art, this method measures chip thermal resistance efficiently, accurately and quickly, and improves the efficiency and reliability of device thermal management.

Description

Technical Field

[0001] The present invention relates to the field of chip measurement technology, and in particular to a chip thermal resistance measurement method, system, device and storage medium. Background Art

[0002] At present, with the development of miniaturization and high performance of electronic equipment, the integration of chips is getting higher and higher, and the power consumption is gradually increasing. The heating problem of chips has become one of the important factors affecting their performance and reliability. Reasonable and effective thermal management technology is essential to ensure the normal operation of chips in high temperature environments, so it is very important to accurately measure the thermal resistance characteristics of chips.

[0003] In one prior art, a temperature monitoring method based on a thermocouple or infrared temperature sensor is usually used to indirectly evaluate the heat dissipation performance of the chip by monitoring the chip surface temperature. Since this method can only obtain the temperature information on the chip surface, it cannot accurately reflect the thermal resistance distribution of each hot spot inside the chip. At the same time, the traditional steady-state thermal resistance measurement method usually relies on manual measurement and calculation, which is difficult to adapt to the complex internal heat flow conditions of the chip.

[0004] In summary, it is difficult to accurately describe the thermal resistance characteristics of different areas inside a chip in the prior art, and it is impossible to effectively achieve heat dissipation measurement of local hot spots in highly integrated chips, which reduces the reliability and service life of the chip. Summary of the invention

[0005] The present invention provides a chip thermal resistance measurement method, system, device and storage medium to achieve faster and more accurate chip thermal resistance measurement.

[0006] In a first aspect, in order to solve the above technical problem, the present invention provides a method for measuring chip thermal resistance, comprising:

[0007] The temperature of the hot spots of the target chip is raised by running the temperature control program, and the thermal image data at different temperatures are obtained by using infrared imaging equipment;

[0008] Performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data;

[0009] According to the standard thermal image data, a thermal resistance function at different temperatures is constructed, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip;

[0010] Based on the thermal resistance function at different temperatures, a thermal resistance test is performed on the hot spots of the target chip, and the thermal resistance test results of each hot spot of the chip are calculated, wherein the thermal resistance test results include a steady-state thermal resistance value, a process thermal resistance value, and an overall thermal resistance value of each hot spot;

[0011] Obtaining a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value;

[0012] The thermal resistance standard value is verified with the thermal resistance test result. If the thermal resistance test result meets the thermal resistance standard value, the thermal resistance function at different temperatures and the chip thermal management performance qualified prompt information are output; if the thermal resistance test result does not meet the thermal resistance standard value, the chip thermal management performance unqualified prompt information is output.

[0013] In one embodiment, constructing thermal resistance functions at different temperatures according to the standard thermal image data includes:

[0014] Counting the heat flux density in the standard thermal image data according to the divided area regions to obtain an area division function of the thermal image; obtaining the thermal resistance function at different temperatures from the area division function of the thermal image; or

[0015] The area of ​​each isotherm of the standard thermal image data is statistically analyzed to obtain the thermal resistance function at different temperatures.

[0016] In one embodiment, constructing thermal resistance functions at different temperatures according to the standard thermal image data includes:

[0017] According to the standard thermal image data, isotherms are superimposed in the heating area of ​​the chip to calculate the temperature gradient in the area;

[0018] Determine the heat flux density in the heat generating area of ​​the chip based on Fourier's law of heat conduction and the temperature gradient;

[0019] Determining a thermal resistance function according to the set chip power consumption and the heat flux density;

[0020] The thermal resistance function is calculated as:

[0021]

[0022] in, is the thermal resistance function, is the temperature difference between adjacent isotherms, is the thermal conductivity of the material, is the temperature gradient, is the heat transfer area.

[0023] In one embodiment, determining the heat flux density in the heat generation area of ​​the chip based on Fourier's heat conduction law and the temperature gradient includes:

[0024] The temperature gradient is calculated by the following formula:

[0025]

[0026] in, is the temperature gradient, is the temperature difference between adjacent isotherms, is the spatial distance between adjacent isotherms;

[0027] The heat flux is calculated using the following formula:

[0028]

[0029] in, is the heat flux density, is the thermal conductivity of the material, is the temperature gradient.

[0030] In one embodiment, after constructing the thermal resistance function at different temperatures according to the standard thermal image data, the method further includes:

[0031] The process thermal resistance value is fitted by using a nonlinear least square method to obtain an optimized thermal resistance function at different temperatures;

[0032] Based on the optimized thermal resistance function, a thermal resistance test is performed on the heat points of the target chip, and the thermal resistance test results of each heat point of the chip are calculated.

[0033] In one embodiment, before performing a thermal resistance test on the heat points of the target chip based on the thermal resistance function at different temperatures and calculating the thermal resistance test results of each heat point of the chip, the method further includes:

[0034] When testing the thermal resistance of the chip's hot spot, determine whether the process thermal resistance value has reached a steady state. If the change rate of the process thermal resistance value of the hot spot is lower than the preset change rate value, it is considered that the steady state has been reached. At this time, the steady-state thermal resistance value is calculated as follows:

[0035]

[0036] in, Represents the steady-state thermal resistance value, is the total thermal power of the chip, is the temperature difference of the conductor, and is a constant, and are the temperatures of the two regions respectively.

[0037] In one embodiment, verifying the thermal resistance standard value and the thermal resistance test result includes:

[0038] When the steady-state thermal resistance value is lower than the single hot spot thermal resistance standard value, and the overall thermal resistance value is lower than the overall thermal resistance standard value, it is determined that the thermal resistance test result meets the thermal resistance standard value;

[0039] When the steady-state thermal resistance value is higher than the single hot spot thermal resistance standard value, or the overall thermal resistance value is higher than the overall thermal resistance standard value, it is determined that the steady-state thermal resistance value does not meet the thermal resistance standard value.

[0040] In a second aspect, the present invention provides a chip thermal resistance measurement system, comprising:

[0041] The thermal image data acquisition module is used to run the temperature control program to increase the temperature of the hot spots of the target chip and use infrared imaging equipment to obtain thermal image data at different temperatures;

[0042] A thermal image data denoising processing module, used for performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data;

[0043] A thermal resistance function construction module, used to construct a thermal resistance function at different temperatures according to the standard thermal image data, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip;

[0044] A thermal resistance test module performs a thermal resistance test on the hot spots of the target chip based on the thermal resistance function at different temperatures, and calculates the thermal resistance test results of each hot spot of the chip, wherein the thermal resistance test results include the steady-state thermal resistance value, process thermal resistance value and overall thermal resistance value of each hot spot;

[0045] A thermal resistance standard value acquisition module is used to acquire a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value;

[0046] The thermal resistance test result verification module is used to verify the thermal resistance standard value with the thermal resistance test result. If the thermal resistance test result meets the thermal resistance standard value, the thermal resistance function at different temperatures and the chip thermal management performance qualification prompt information are output; if the thermal resistance test result does not meet the thermal resistance standard value, the chip thermal management performance failure prompt information is output.

[0047] In a third aspect, the present invention further provides an electronic device, comprising a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor implements any one of the above-mentioned chip thermal resistance measurement methods when executing the computer program.

[0048] In a fourth aspect, the present invention further provides a computer-readable storage medium, which includes a stored computer program, wherein when the computer program is running, the device where the computer-readable storage medium is located is controlled to execute any one of the above-mentioned chip thermal resistance measurement methods.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] The present invention discloses a method for measuring chip thermal resistance, comprising: raising the temperature of a hot spot of a target chip by running a temperature control program, and obtaining thermal image data at different temperatures by using an infrared imaging device; performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data; constructing a thermal resistance function at different temperatures according to the standard thermal image data, wherein the thermal resistance function is used to represent the thermal resistance characteristics of a hot area in a chip; performing a thermal resistance test on the hot spot of a target chip based on the thermal resistance function at different temperatures, and calculating the thermal resistance test results of each hot spot of the chip, wherein the thermal resistance test results include a steady-state thermal resistance value, a process thermal resistance value, and an overall thermal resistance value of each hot spot; obtaining a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value; verifying the thermal resistance standard value with the thermal resistance test result, and outputting the thermal resistance function at different temperatures and chip thermal management performance qualified prompt information if the thermal resistance test result meets the thermal resistance standard value; and outputting chip thermal management performance unqualified prompt information if the thermal resistance test result does not meet the thermal resistance standard value.

[0051] The present invention adopts non-contact thermal image acquisition and isotherm superposition method, combined with the physical model of heat flux density and temperature gradient, to accurately measure the steady-state thermal resistance values ​​of different areas of the chip, thereby solving the problems of insufficient accuracy, long time consumption, and difficulty in detecting local hotspots in traditional thermal resistance testing methods, achieving rapid and accurate measurement of chip thermal resistance, and improving the efficiency and reliability of chip thermal management. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 1 is a schematic flow chart of a method for measuring chip thermal resistance provided by the first embodiment of the present invention;

[0053] Figure 2 Schematic diagram of the structure of a chip thermal resistance measurement system provided by the second embodiment of the present invention. DETAILED DESCRIPTION

[0054] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0055] Reference Figure 1 The first embodiment of the present invention provides a method for measuring chip thermal resistance, comprising the following steps:

[0056] S100, raising the temperature of the heating point of the target chip by running a temperature control program, and obtaining thermal image data at different temperatures by using an infrared imaging device;

[0057] S200, performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data;

[0058] S300, constructing a thermal resistance function at different temperatures according to the standard thermal image data, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip;

[0059] S400, based on the thermal resistance function at different temperatures, performing thermal resistance test on the hot spots of the target chip, and calculating the thermal resistance test results of each hot spot of the chip, wherein the thermal resistance test results include a steady-state thermal resistance value, a process thermal resistance value, and an overall thermal resistance value of each hot spot;

[0060] S500, obtaining a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value;

[0061] S600, verifying the thermal resistance standard value and the thermal resistance test result. If the thermal resistance test result meets the thermal resistance standard value, executing step S700, outputting the thermal resistance function at different temperatures and the chip thermal management performance qualified prompt information; if the thermal resistance test result does not meet the thermal resistance standard value, executing step S800, outputting the chip thermal management performance unqualified prompt information.

[0062] In step S100, the temperature of the hot spots of the target chip is raised by running a temperature control program, and the temperature control program controls the temperature rise of the hot spots of the chip based on a pre-set temperature rise scheme. Exemplarily, the control program gradually increases the temperature of the target chip at a specified temperature rise rate or time interval to ensure that the heat is evenly conducted to each area of ​​the chip. This ensures that the heat distribution on the chip surface can be accurately captured in different temperature intervals. Alternatively, multiple target temperature points are set for the chip to control the chip temperature to rise gradually.

[0063] In an optional implementation, the step of acquiring thermal image data at different temperatures using an infrared imaging device includes:

[0064] Infrared imaging equipment can record the temperature of different locations on the chip surface in real time, and generate thermal image data by capturing infrared images at different times and temperatures. These thermal image data represent the temperature distribution of various areas of the chip, especially near the hot spots. Through infrared imaging equipment, the temperature data of the hot spots of the chip can be collected contactlessly, and multiple thermal images at different temperatures can be recorded as the temperature gradually rises.

[0065] During the data collection process, the resolution and accuracy of the infrared imaging equipment are crucial to the accuracy of the entire solution. Higher-precision equipment can capture more subtle temperature changes on the chip surface, which helps to more accurately measure the local temperature gradient of the chip, especially in the hot spot area.

[0066] In step S200, the thermal image data at different temperatures are subjected to denoising to obtain standard thermal image data. The purpose of this step is to improve the quality of thermal images, eliminate noise that may be introduced during the acquisition process, and ensure the accuracy and precision of subsequent processing.

[0067] In an optional implementation, the thermal image data at different temperatures are subjected to denoising processing, and commonly used thermal image denoising processing methods include:

[0068] Gaussian filtering: Gaussian filtering is a commonly used image smoothing technique that can effectively remove high-frequency noise in images. It uses a Gaussian kernel function to perform a weighted average on each pixel in the image, suppressing random noise while retaining the trend of temperature changes. It is suitable for removing sensor noise and subtle environmental fluctuations.

[0069] Fourier transform denoising: By converting the image from the spatial domain to the frequency domain, high-frequency noise can be removed by analyzing the image spectrum. The high-frequency part often corresponds to random noise, while the low-frequency part corresponds to the trend of temperature change. The noise component in the image can be removed by using an appropriate filter.

[0070] Adaptive filtering: Adaptive filters automatically adjust the filter strength according to the noise level in different areas of the thermal image, which can remove noise while maintaining important information such as image edges. In thermal images, adaptive filters can identify areas with drastic temperature changes (such as hot spots) and perform lighter filtering on these areas to preserve the true temperature change details.

[0071] In step S300, a thermal resistance function at different temperatures is constructed based on the standard thermal image data, and the thermal resistance function is used to represent the thermal resistance characteristics of the hot spot area in the chip. The core of this step is to use the standard thermal image data processed in S200 to derive the thermal resistance function of each hot spot of the chip, with the purpose of accurately describing the thermal conductivity of different areas of the chip through the thermal resistance function.

[0072] In an optional implementation, constructing a thermal resistance function at different temperatures according to the standard thermal image data includes:

[0073] The heat flux density in the standard thermal image data is counted according to the divided area regions to obtain the area equalization function of the thermal image; that is, the thermal image data is divided into multiple fixed area regions according to certain rules. This division usually divides the chip surface or the hot spot area into several small units of equal area. Each area represents a pixel in the image or a larger area formed by a combination of multiple pixels;

[0074] The change in area between different isotherms can reflect the change in the local temperature gradient of the chip. The calculation formula for the regional temperature gradient is as follows:

[0075]

[0076] in, is the regional temperature gradient, is the temperature difference between adjacent isotherms, is the distance between adjacent isotherms;

[0077] In each divided area, the heat flux density is calculated separately. According to Fourier's law of heat conduction, there is a direct relationship between the heat flux density and the temperature gradient. The calculation formula of the heat flux density is:

[0078]

[0079] in, is the heat flux density, is the thermal conductivity of the material, is the temperature gradient.

[0080] By dividing the chip surface into several equal area units, the heat flux density and temperature difference of each unit can be statistically analyzed to generate a thermal resistance function.

[0081] For each fixed area unit, the thermal resistance function is calculated as:

[0082]

[0083] in, is the thermal resistance function, is the temperature difference in the region, is the heat flux density, is the area of ​​the region, that is, the area of ​​the equally divided regions.

[0084] In another optional implementation, constructing the thermal resistance function at different temperatures according to the standard thermal image data includes:

[0085] The area of ​​each isotherm of the standard thermal image data is statistically analyzed to obtain the thermal resistance function at different temperatures.

[0086] The area surrounded by each isotherm corresponds to the part with the same temperature in the thermal image. By counting the area of ​​these areas, we can get the area corresponding to each isotherm, which indicates the size of the area occupied by the chip surface at a certain temperature.

[0087] The change in area between different isotherms can reflect the change in the local temperature gradient of the chip. The calculation formula for the regional temperature gradient is as follows:

[0088]

[0089] in, is the regional temperature gradient, is the temperature difference between adjacent isotherms, is the distance between adjacent isotherms;

[0090] By counting the area difference of each temperature interval (i.e., between adjacent isotherms), the heat flux density of the area can be further derived. The heat flux density is calculated as follows:

[0091]

[0092] in, is the heat flux density of the region, is the thermal conductivity of the material, is the regional temperature gradient;

[0093] By counting the area of ​​the isotherm, the thermal resistance function in the temperature region can be calculated. Thermal resistance is defined as the ratio between the temperature difference and the heat flux. Combining the relationship between the heat flux density and the area, the calculation formula of the thermal resistance function can be obtained:

[0094]

[0095] in, is the temperature difference between adjacent isotherms, is the heat flux density of the region, is the area corresponding to each isotherm.

[0096] In an optional implementation, constructing a thermal resistance function at different temperatures according to the standard thermal image data includes:

[0097] According to the standard thermal image data, isotherms are superimposed in the chip heating area, and the temperature gradient is calculated based on the temperature difference between adjacent isotherms and the spatial distance between them. The temperature gradient calculation formula is:

[0098]

[0099] in, is the regional temperature gradient, is the temperature difference between adjacent isotherms, which can be directly obtained from the thermal image data. is the distance between adjacent isotherms, indicating the spatial span of temperature change;

[0100] Based on Fourier's law of heat conduction and the temperature gradient, combined with the thermal conductivity of the material, the heat flux density at each location in the chip's heating area can be obtained. The heat flux density calculation formula is:

[0101]

[0102] in, is the heat flux density, is the thermal conductivity of the material, is the temperature gradient, and the heat flux density describes the speed and direction of heat transfer in the area.

[0103] The power consumed by the chip during operation generates heat, which needs to be transferred from the chip's hot spots to the surrounding area through thermal conduction. The power consumption can be obtained through experimental settings or chip design parameters, and the unit is watt.

[0104] The thermal resistance function reflects the relationship between temperature difference and heat flow, and is defined as the ratio of temperature difference to heat flow through the area. The thermal resistance function is determined according to the set chip power consumption and the heat flux density. The calculation method of the thermal resistance function is:

[0105]

[0106] in, is the thermal resistance function, is the temperature difference between adjacent isotherms, is the thermal conductivity of the material, is the temperature gradient, is the heat transfer area;

[0107] The thermal resistance function can be regarded as a measure of the heat dissipation capacity of a certain area of ​​the chip. The larger the value, the worse the heat dissipation capacity of the area; the smaller the value, the better the heat dissipation performance of the area.

[0108] Preferably, after constructing the thermal resistance function at different temperatures according to the standard thermal image data, the method further comprises:

[0109] Using standard thermal image data, a preliminary thermal resistance function is constructed. The calculation formula of the preliminary thermal resistance function is:

[0110]

[0111] in, is the preliminary thermal resistance function, is the temperature difference, is the heat flux density, is the thermal conductivity area of ​​the chip.

[0112] Based on the nonlinear least squares method, the residual sum of squares is minimized, and the calculation formula of the residual sum of squares is:

[0113]

[0114] in, is the residual sum of squares, is the thermal resistance value after adjusting the parameters, To fit the thermal resistance value, the goal of the fitting process is to minimize ;

[0115] The final optimized thermal resistance function is calculated as follows:

[0116]

[0117] in, is the optimized thermal resistance function, It uses nonlinear least squares fitting and adjustment to reduce measurement errors and obtain the optimized temperature difference. It combines the temperature gradient and the thermal conductivity of the material, and uses the fitting method to adjust the heat flux density to obtain the optimized heat flux density value. is the thermal conductivity area of ​​the chip.

[0118] In this process, the preliminary temperature difference and heat flux density of the chip's hot spots at different temperatures are first obtained through standard thermal image data. These preliminary data are used to construct a preliminary thermal resistance function. Next, these preliminary values ​​are fitted using a nonlinear least squares method to minimize the difference between the measured values ​​and the actual values. Through fitting, the optimized temperature difference and heat flux density are obtained. The heat transfer area of ​​the hot spot is a constant determined by the chip's geometric structure. Finally, the optimized thermal resistance value is calculated using these optimized data.

[0119] In step S400, based on the thermal resistance function at different temperatures, a thermal resistance test is performed on the hot spots of the target chip. There are usually multiple hot spots on the chip, and these areas correspond to the core components, processors or power management units of the chip. First, the specific locations of these hot spots can be determined by the previous thermal image analysis results. At each hot spot, the thermal resistance function at different temperatures calculated previously is used to gradually analyze the thermal resistance characteristics of these hot spots. The analysis includes the change in thermal resistance under multiple temperature conditions.

[0120] In an optional embodiment, the steady-state thermal resistance value refers to the thermal resistance value measured after the chip reaches thermal equilibrium, that is, after the temperature no longer changes with time. The steady-state thermal resistance reflects the heat dissipation performance of the hot spot under constant temperature conditions. The calculation steps include:

[0121] Obtain the steady-state temperature difference. When the chip reaches a steady state at a certain temperature, record the temperature of the hot spot and the ambient temperature. The steady-state temperature difference calculation formula is:

[0122]

[0123] in, is the steady-state temperature difference, is the temperature of the hot spot, is the ambient temperature;

[0124] Steady-state heat flux calculation: The steady-state heat flux of the heating point is calculated by Fourier's law. The calculation formula of steady-state heat flux is:

[0125]

[0126] in, is the steady-state heat flux, is the thermal conductivity of the material, is the steady-state temperature difference;

[0127] The steady-state thermal resistance is calculated using the thermal resistance function and heat flux density:

[0128]

[0129] in, is the steady-state thermal resistance, is the steady-state temperature difference, is the steady-state heat flux, is the heat transfer area of ​​the heating point;

[0130] During the chip heating or cooling process, record the instantaneous hot spot temperature and ambient temperature. The process temperature difference is calculated as:

[0131]

[0132] in, is the process temperature difference at a certain moment, is the temperature of the hot spot at that moment, is the ambient temperature at that moment.

[0133] The heat flux density in the process is calculated by Fourier's law. The calculation formula of the process heat flux density is:

[0134]

[0135] in, is the transient heat flux at a certain moment, is the thermal conductivity of the material, is the thermal conductivity of the material at that moment is the process temperature gradient, which is calculated by the dynamic change of the isotherm;

[0136] During the operation of the chip, the temperature will not reach a stable state immediately, especially when the chip is started or undergoes load changes, the temperature will gradually rise or fall over time. At this time, the hot spots of the chip will experience a temperature change process, and the process thermal resistance value can describe the dynamic characteristics of heat transfer in this process. By monitoring the change of the hot spot temperature over time, combined with the changes in the material thermal conductivity and heat flux density, it is possible to evaluate how the chip manages heat in a short period of time.

[0137] Different from steady-state thermal resistance, process thermal resistance reflects the heat dissipation capacity of the chip under dynamic temperature change conditions, especially when the chip heats up or cools down rapidly, evaluating whether it can quickly and effectively transfer heat. Using the instantaneous temperature difference and heat flux density, the process thermal resistance value is calculated as follows:

[0138]

[0139] in, is the transient thermal resistance value at a certain moment, is the process temperature difference at that moment, is the transient heat flux at that moment, It is the heat transfer area of ​​the heating point.

[0140] The combination of steady-state thermal resistance and process thermal resistance can comprehensively measure the heat dissipation capacity of the chip under different working conditions. The steady-state thermal resistance is used to evaluate the heat dissipation efficiency of the chip during long-term stable operation, while the process thermal resistance is used to evaluate the heat dissipation response capacity of the chip during dynamic temperature changes. Through the analysis of these two thermal resistance values, the heat dissipation system of the chip can be effectively designed and the stability and reliability of the chip under various temperature conditions can be ensured.

[0141] The overall thermal resistance is the thermal resistance value after comprehensive analysis of the entire hot spot area under various temperature conditions. It includes not only the thermal resistance under steady-state conditions, but also the influence of transient thermal resistance. The calculation of the overall thermal resistance value can be understood as the integration or average of the entire temperature change process. The calculation steps are as follows:

[0142] Overall temperature difference calculation: Calculate the average temperature difference of the chip during the entire heating or cooling cycle. This can be obtained by integrating the temperature difference over the entire time interval. The calculation formula is:

[0143]

[0144] in, is the average temperature difference over the entire heating or cooling cycle, is the total length of time (duration of heating or cooling), is the instantaneous temperature difference at time;

[0145] Similarly, the average heat flux density of the chip's heating point area is calculated. In the entire time interval, the instantaneous heat flux density is integrated to obtain the average heat flux density. The calculation formula for the overall heat flux density is:

[0146]

[0147] in, is the average heat flux density during the entire heating or cooling cycle, is the instantaneous heat flux at that moment;

[0148] The overall thermal resistance of the chip's heating point is calculated using the average temperature difference and average heat flux. The calculation formula for the overall thermal resistance is:

[0149]

[0150] in, is the overall thermal resistance, is the overall temperature difference, is the overall heat flux, It is the heat transfer area of ​​the chip’s heating point;

[0151] The overall thermal resistance value is a comprehensive measure of the chip's heat dissipation performance, which can simultaneously reflect the chip's heat dissipation response during rapid temperature changes (process thermal resistance) and the chip's heat dissipation performance during stable operation (steady-state thermal resistance).

[0152] The lower the overall thermal resistance value, the better the chip can maintain good heat dissipation performance during the entire operation process, whether in transient or steady state. On the contrary, an overall thermal resistance value greater than the overall thermal resistance standard value indicates that the chip has heat dissipation problems in certain stages (such as when the temperature rises rapidly).

[0153] In chip design, thermal management not only needs to focus on the average heat dissipation performance of the chip, but also needs to ensure that the chip can still effectively dissipate heat under high load and sudden temperature changes. Low steady-state thermal resistance means that the chip can maintain a suitable temperature during long-term operation, while low process thermal resistance ensures that the chip can quickly adjust the temperature when the temperature changes to avoid local overheating.

[0154] In step S500, the thermal resistance standard value input by the user is obtained, and the thermal resistance standard value includes the overall thermal resistance standard value and the single hot spot thermal resistance standard value; the overall thermal resistance standard value is a reference value for evaluating the overall heat dissipation performance of the chip, which is usually set based on the design requirements and working conditions of the chip. The overall thermal resistance standard value defines the maximum average thermal resistance allowed by the chip during operation. This value is used to measure the heat dissipation capacity of the chip under long-term operation or frequent temperature fluctuations. It is a key indicator to ensure that the chip will not be affected by overheating or damaged during operation; the single hot spot thermal resistance standard value is a standard value set for the heat dissipation performance of a specific hot spot area on the chip. The single hot spot thermal resistance standard value is used to evaluate the heat dissipation efficiency of the local high-heat area of ​​the chip, ensuring that each hot spot can effectively conduct heat away to prevent local overheating. This standard value is crucial for chips that generate high-temperature local areas during operation, especially high-power intensive areas such as processor cores and power management modules.

[0155] In step S600, this step will compare the overall thermal resistance standard value and the single hot spot thermal resistance standard value obtained in the previous step with the actual results of the thermal resistance test item by item. This process covers the overall heat dissipation performance and the local heat dissipation performance of each hot spot to ensure that the thermal management system of the chip at different temperatures can meet the design requirements. During the verification process, this step will check whether the test results are within the preset standard range. If all thermal resistance values ​​are lower than or equal to the thermal resistance standard value, it means that the heat dissipation capacity of the chip has met the expected requirements, and the chip can operate normally under the specified working conditions without overheating. If the thermal resistance test results of the chip meet the thermal resistance standard value, the system will execute step S700; if the thermal resistance test results of the chip do not meet the thermal resistance standard value (that is, one or more thermal resistance values ​​are higher than the set standard value), the system will execute step S800.

[0156] In step S700, the system will output the thermal resistance function of the chip at different temperatures and generate prompt information to confirm that the thermal management performance of the chip is qualified. This prompt information indicates that the chip can effectively dissipate heat, meet the design requirements, and can be put into use or enter the next stage of the development process.

[0157] In step S800, the system will output a prompt message that the chip's thermal management performance is unqualified, reminding the designer that the chip's heat dissipation performance is not up to standard. This unqualified prompt message means that the chip has a problem of insufficient heat dissipation, especially some hot spots are at risk of overheating, causing the chip to degrade in performance or be damaged during operation. Therefore, it is necessary to adjust and optimize the chip's heat dissipation design, which involves improving heat dissipation materials, design structures, or recalibrating temperature control mechanisms.

[0158] In order to facilitate the understanding of the present invention, some preferred embodiments of the present invention are further described below.

[0159] In one implementation, the present invention can collect thermal image data of the chip's hot spots by using infrared thermal imaging equipment, and combine it with the isotherm superposition method to quickly construct the thermal resistance function of each hot spot of the chip. With the support of the temperature control system, the chip can be gradually heated up by program control, and the thermal image data at different temperatures can be recorded in real time; for example, the system can automatically adjust the temperature control scheme of the chip's hot spots by learning the existing thermal resistance test results to more accurately obtain the changes in thermal resistance at different temperatures. At the same time, the test data is fed back in real time to identify potential heat dissipation problems of the chip, thereby optimizing the heat dissipation scheme in advance in the design stage and improving the overall performance of the chip.

[0160] The working process of the present invention is described below using a relatively common scenario as an example.

[0161] In this scenario, it is assumed that the target chip is a processor module, and its heat points are concentrated in the core computing unit and the power management module. In actual operation, the chip heat points are gradually heated by the temperature control system, and the infrared imaging device is used to obtain thermal image data at different temperatures. Whenever the chip temperature rises to a new set point, the system collects thermal image data in real time and performs denoising to ensure the accuracy of the data.

[0162] Next, the system will superimpose isotherms based on the denoised thermal image data to calculate the temperature gradient and heat flux density of the chip's hot spot area. Based on these calculation results, the system constructs a thermal resistance function at different temperatures and performs thermal resistance analysis on each hot spot. At this point, the system determines whether the chip's heat dissipation performance meets the requirements by comparing the chip's thermal resistance test results with the thermal resistance standard value entered by the user.

[0163] If the thermal resistance test results meet expectations, the system will output a prompt message indicating that the chip's thermal management performance is qualified, and generate a detailed report on the steady-state thermal resistance value, process thermal resistance value, and overall thermal resistance value of each hot spot for reference by designers. If the test results do not meet the requirements, the system will prompt that the thermal management performance is unqualified and recommends optimizing the chip's heat dissipation design.

[0164] In summary, the present invention provides a method for measuring the thermal resistance of a chip, which achieves high-quality and accurate measurement of the thermal resistance of a chip by acquiring thermal image data, denoising the thermal image data, constructing a chip thermal resistance function, testing the chip thermal resistance, acquiring the standard value of the chip thermal resistance, and analyzing the test results. This method solves the problems of insufficient accuracy, long test time, and difficulty in detecting local hot spots in traditional thermal resistance measurement methods. Compared with the prior art, the present invention can more quickly and accurately obtain the thermal resistance information of the chip, optimize the heat dissipation design, and improve the thermal management efficiency of the chip, and is particularly suitable for chip design and development scenarios that require efficient heat dissipation performance testing. The present invention combines non-contact measurement technology and physical models to ensure the accuracy and reliability of the measurement results, and can provide strong data support for the optimization of the heat dissipation performance of the chip.

[0165] Reference Figure 2 A second embodiment of the present invention provides a chip thermal resistance measurement system, comprising:

[0166] The thermal image data acquisition module is used to run the temperature control program to increase the temperature of the hot spots of the target chip and use infrared imaging equipment to obtain thermal image data at different temperatures;

[0167] A thermal image data denoising processing module, used for performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data;

[0168] A thermal resistance function construction module, used to construct a thermal resistance function at different temperatures according to the standard thermal image data, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip;

[0169] A thermal resistance test module performs a thermal resistance test on the hot spots of the target chip based on the thermal resistance function at different temperatures, and calculates the thermal resistance test results of each hot spot of the chip, wherein the thermal resistance test results include the steady-state thermal resistance value, process thermal resistance value and overall thermal resistance value of each hot spot;

[0170] A thermal resistance standard value acquisition module is used to acquire a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value;

[0171] The thermal resistance test result verification module is used to verify the thermal resistance standard value with the thermal resistance test result. If the thermal resistance test result meets the thermal resistance standard value, the thermal resistance function at different temperatures and the chip thermal management performance qualification prompt information are output; if the thermal resistance test result does not meet the thermal resistance standard value, the chip thermal management performance failure prompt information is output.

[0172] Preferably, the thermal image data denoising processing module includes denoising the thermal image using Gaussian filtering or wavelet denoising technology. This processing method can effectively remove high-frequency noise in the thermal image, especially sensor noise and environmental noise, improve the accuracy of the thermal image data, and ensure the accuracy of the data during the thermal resistance calculation process. Through different filtering methods, the most appropriate denoising strategy can be selected according to the actual distribution of the chip's heating points, thereby improving the stability of the measurement results.

[0173] Preferably, the thermal resistance function construction module performs statistics based on the isothermal area in the thermal image and derives the thermal resistance function through a nonlinear regression model. The model optimizes the shape of the thermal resistance function by dynamically adjusting the distance between isotherms to make it more consistent with the actual temperature distribution. This method can not only improve the accuracy of thermal resistance calculation, but also flexibly adapt to the thermal management requirements of different chip hot spot areas, providing more accurate data support for the heat dissipation design of the chip.

[0174] It should be noted that a chip thermal resistance measurement system provided in an embodiment of the present invention is used to execute all process steps of a chip thermal resistance measurement method in the above embodiment, and the working principles and beneficial effects of the two correspond one to one, so they will not be repeated.

[0175] The embodiment of the present invention further provides an electronic device. The electronic device includes: a processor, a memory, and a computer program stored in the memory and executable on the processor, such as a thermal image data acquisition program and a thermal image data denoising processing program. When the processor executes the computer program, the steps in the above-mentioned chip thermal resistance measurement method embodiments are implemented, such as Figure 1 Alternatively, when the processor executes the computer program, the functions of the modules / units in the above-mentioned device embodiments are realized, such as the thermal image data denoising processing module.

[0176] Exemplarily, the computer program may be divided into one or more modules / units, which are stored in the memory and executed by the processor to implement the present invention. The one or more modules / units may be a series of computer program instruction segments capable of implementing specific functions, which are used to describe the execution process of the computer program in the electronic device.

[0177] The electronic device may be a computing device such as a desktop computer, a notebook, a PDA, and a smart tablet. The electronic device may include, but is not limited to, a processor and a memory. Those skilled in the art will appreciate that the above components are merely examples of electronic devices and do not constitute a limitation on the electronic device. The electronic device may include more or fewer components than the above components, or a combination of certain components, or different components. For example, the electronic device may also include input and output devices, network access devices, buses, etc.

[0178] The processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc. The processor is the control center of the electronic device, and uses various interfaces and lines to connect various parts of the entire electronic device.

[0179] The memory can be used to store the computer program and / or module, and the processor realizes various functions of the electronic device by running or executing the computer program and / or module stored in the memory, and calling the data stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, an application required for at least one function (such as a sound playback function, an image playback function, etc.), etc.; the data storage area can store data created according to the use of the mobile phone (such as audio data, a phone book, etc.), etc. In addition, the memory can include a high-speed random access memory, and can also include a non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), at least one disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0180] Wherein, if the module / unit integrated in the electronic device is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Wherein, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium. It should be noted that the content contained in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media do not include electric carrier signals and telecommunication signals.

[0181] It should be noted that the device embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. In addition, in the accompanying drawings of the device embodiments provided by the present invention, the connection relationship between the modules indicates that there is a communication connection between them, which may be specifically implemented as one or more communication buses or signal lines. A person of ordinary skill in the art may understand and implement it without paying any creative effort.

[0182] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. It is particularly pointed out that for those skilled in the art, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for measuring chip thermal resistance, characterized in that: Executed by a computer, including: The temperature of the hot spots of the target chip is raised by running the temperature control program, and the thermal image data at different temperatures are obtained by using the infrared imaging device; Performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data; According to the standard thermal image data, a thermal resistance function at different temperatures is constructed, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip; Based on the thermal resistance function at different temperatures, a thermal resistance test is performed on the hot spots of the target chip, and the thermal resistance test results of each hot spot of the chip are calculated, wherein the thermal resistance test results include a steady-state thermal resistance value of each hot spot and an overall thermal resistance value; Obtaining a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value; Verify the thermal resistance standard value and the thermal resistance test result, and if the thermal resistance test result meets the thermal resistance standard value, output the thermal resistance function at different temperatures and the chip thermal management performance qualified prompt information; if the thermal resistance test result does not meet the thermal resistance standard value, output the chip thermal management performance unqualified prompt information; Wherein, constructing the thermal resistance function at different temperatures according to the standard thermal image data includes: According to the standard thermal image data, isotherms are superimposed in the heating area of ​​the chip to calculate the temperature gradient in the area; Determine the heat flux density in the heat generating area of ​​the chip based on Fourier's law of heat conduction and the temperature gradient; Determine the thermal resistance function; where the thermal resistance function is calculated as: in, is the thermal resistance function, is the temperature difference between adjacent isotherms, is the thermal conductivity of the material, is the temperature gradient, is the heat transfer area; Wherein, determining the heat flux density in the heating area of ​​the chip based on Fourier's heat conduction law and the temperature gradient includes: The temperature gradient is calculated by the following formula: in, is the spatial distance between adjacent isotherms; The heat flux is calculated using the following formula: in, is the heat flux density, is the thermal conductivity of the material; Among them, the overall thermal resistance value is the thermal resistance value after comprehensive analysis of the entire heating point area under various temperature conditions. The calculation formula of the overall thermal resistance value is: in, is the overall thermal resistance; is the average temperature difference over the entire heating or cooling cycle, is the duration of heating or cooling, It is at the moment The instantaneous temperature difference; is the average heat flux density during the entire heating or cooling cycle, It's time The instantaneous heat flux density.

2. The method for measuring chip thermal resistance according to claim 1, characterized in that: The step of constructing a thermal resistance function at different temperatures according to the standard thermal image data comprises: The heat flux density in the standard thermal image data is counted according to the divided area regions to obtain the area equalization function of the thermal image; the thermal resistance function at different temperatures is obtained from the area equalization function of the thermal image; or the area of ​​the standard thermal image data on each isotherm is counted to obtain the thermal resistance function at different temperatures.

3. The method for measuring chip thermal resistance according to claim 1, characterized in that: After constructing the thermal resistance function at different temperatures according to the standard thermal image data, the method further includes: Obtain preliminary temperature difference and preliminary heat flux density of the chip's hot spots at different temperatures through standard thermal image data; The preliminary temperature difference and preliminary heat flux are fitted by nonlinear least square method to obtain the optimized temperature difference and heat flux, so as to obtain the optimized thermal resistance function at different temperatures. Based on the optimized thermal resistance function, a thermal resistance test is performed on the heat points of the target chip, and the thermal resistance test results of each heat point of the chip are calculated.

4. The method for measuring chip thermal resistance according to claim 1, characterized in that: The verifying the thermal resistance standard value and the thermal resistance test result includes: When the steady-state thermal resistance value is lower than the single hot spot thermal resistance standard value, and the overall thermal resistance value is lower than the overall thermal resistance standard value, it is determined that the thermal resistance test result meets the thermal resistance standard value; When the steady-state thermal resistance value is higher than the single hot spot thermal resistance standard value, or the overall thermal resistance value is higher than the overall thermal resistance standard value, it is determined that the steady-state thermal resistance value does not meet the thermal resistance standard value.

5. A chip thermal resistance measurement system, characterized in that: A method for measuring the thermal resistance of a chip according to any one of claims 1 to 4, comprising: The thermal image data acquisition module is used to run the temperature control program to increase the temperature of the hot spots of the target chip and use infrared imaging equipment to obtain thermal image data at different temperatures; A thermal image data denoising processing module, used for performing denoising processing on the thermal image data at different temperatures to obtain standard thermal image data; A thermal resistance function construction module, used to construct a thermal resistance function at different temperatures according to the standard thermal image data, wherein the thermal resistance function is used to represent the thermal resistance characteristics of the heating area in the chip; A thermal resistance test module, based on the thermal resistance function at different temperatures, performs a thermal resistance test on the hot spots of the target chip, and calculates the thermal resistance test results of each hot spot of the chip, wherein the thermal resistance test results include a steady-state thermal resistance value of each hot spot and an overall thermal resistance value; A thermal resistance standard value acquisition module is used to acquire a thermal resistance standard value input by a user, wherein the thermal resistance standard value includes an overall thermal resistance standard value and a single hot spot thermal resistance standard value; The thermal resistance test result verification module is used to verify the thermal resistance standard value with the thermal resistance test result. If the thermal resistance test result meets the thermal resistance standard value, the thermal resistance function at different temperatures and the chip thermal management performance qualification prompt information are output; if the thermal resistance test result does not meet the thermal resistance standard value, the chip thermal management performance failure prompt information is output.

6. An electronic device, characterized in that: The method comprises a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor implements the chip thermal resistance measurement method according to any one of claims 1 to 4 when executing the computer program.

7. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored computer program, wherein when the computer program is executed, the device where the computer-readable storage medium is located is controlled to execute the chip thermal resistance measurement method according to any one of claims 1 to 4.

Images