IGBT internal defect location method and device based on current rise transient process

Abstract

The present invention provides an IGBT internal defect location method and device based on the current rising transient process, the method comprising: obtaining a waveform diagram of the current rising transient process when the IGBT is turned on, the waveform diagram including the current rising stage; obtaining the control relationship between the gate voltage and the collector current in the current rising stage; detecting the gate voltage and the collector current; comparing the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether the collector defect occurs; comparing the gate voltage after the defect occurs with the normal gate voltage rising rate, and the collector current after the defect occurs with the normal collector current rising rate to determine whether the gate defect or the emitter defect occurs. The present invention significantly improves the accuracy and reliability of IGBT state monitoring, and has important practical significance for ensuring the safe and stable operation of the equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of IGBT defect positioning, and in particular to an IGBT internal defect positioning method and device based on a current rising transient process. Background Art

[0002] The statements in this section merely provide background information related to the present invention and do not necessarily constitute prior art.

[0003] Insulated Gate Bipolar Transistor (IGBT) devices have the advantages of fast switching speed of MOSFET devices and low conduction loss of bipolar devices. They have been widely used in new energy converters, flexible DC transmission equipment, dynamic reactive power compensation equipment and other occasions.

[0004] The internal defects of IGBT include collector defects, gate defects and emitter defects. Although there are some methods to locate internal defects, some methods are too complicated. There is a lack of an efficient and convenient method for locating internal defects of IGBT. Summary of the invention

[0005] In view of this, the present invention provides a method and device for locating internal defects of an IGBT based on a current rising transient process, so as to solve at least one of the above-mentioned problems.

[0006] In order to achieve the above object, the present invention adopts the following scheme:

[0007] According to a first aspect of the present invention, there is provided an IGBT internal defect locating method based on a current rise transient process, the method comprising obtaining a waveform diagram of a current rise transient process when the IGBT is turned on, the waveform diagram comprising a current rise stage; obtaining a control relationship between a gate voltage and a collector current in the current rise stage; detecting the gate voltage and the collector current; comparing the gate voltage after a defect occurs with a normal gate voltage, and the collector current after a defect occurs with a normal collector current to determine whether a collector defect occurs; comparing the rising rates of the gate voltage after a defect occurs with those of the normal gate voltage, and the rising rates of the collector current after a defect occurs with those of the normal collector current to determine whether a gate defect or an emitter defect occurs.

[0008] As an embodiment of the present invention, the control relationship between the gate voltage and the collector current in the current rising stage in the above method is as follows:

[0009] ;

[0010] ;

[0011] ;

[0012] In the above formula, i C is the collector current; u GE is the gate voltage; n is the total number of chips; t is time, t0 is the IGBT turn-on time; μ n is the electron mobility; α pnp is the transistor transport coefficient; w is the gate channel width; l is the gate channel length; c ox is the capacitance per unit area of ​​the gate channel; R G,on is the gate turn-on resistor; C ies Input capacitance of the gate of a single IGBT chip; U G,ON is the gate supply voltage during the turn-on process, U G,Off is the gate supply voltage during the turn-off process; U T is the gate threshold voltage.

[0013] As an embodiment of the present invention, the above method compares the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether a collector defect occurs, including: determining whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is less than the normal collector current; if the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is less than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

[0014] As an embodiment of the present invention, the above method compares the rising rate of the gate voltage after the defect occurs with the normal gate voltage, and the rising rate of the collector current after the defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs, including: determining whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; if the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, then it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

[0015] According to a second aspect of the present invention, there is provided an IGBT internal defect positioning device based on a current rise transient process, the device comprising: a waveform acquisition unit, for acquiring a waveform diagram of a current rise transient process when the IGBT is turned on, the waveform diagram comprising a current rise stage; a control relationship acquisition unit, for acquiring a control relationship detection unit of a gate voltage to a collector current in the current rise stage, for detecting the gate voltage and the collector current; a first defect positioning unit, for comparing the gate voltage after a defect occurs with the normal gate voltage, and the collector current after a defect occurs with the normal collector current to determine whether a collector defect occurs; a second defect positioning unit, for comparing the rising rate of the gate voltage after a defect occurs with the normal gate voltage, and the rising rate of the collector current after a defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs.

[0016] As an embodiment of the present invention, the control relationship between the gate voltage and the collector current in the above current rising stage is as follows:

[0017] ;

[0018] ;

[0019] ;

[0020] In the above formula, i C is the collector current; u GE is the gate voltage; n is the total number of chips; t is time, t0 is the IGBT turn-on time; μ n is the electron mobility; α pnp is the transistor transport coefficient; w is the gate channel width; l is the gate channel length; c ox is the capacitance per unit area of ​​the gate channel; R G,on is the gate turn-on resistor; C ies Input capacitance of the gate of a single IGBT chip; U G,ON is the gate supply voltage during the turn-on process, U G,Off is the gate supply voltage during the turn-off process; U T is the gate threshold voltage.

[0021] As an embodiment of the present invention, the above-mentioned first defect location unit is specifically used to: determine whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is less than the normal collector current; if the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is less than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

[0022] As an embodiment of the present invention, the above-mentioned second defect location unit is specifically used to: determine whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; if the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

[0023] According to a third aspect of the present invention, there is provided an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above method when executing the computer program.

[0024] According to a fourth aspect of the present invention, there is provided a computer-readable storage medium having a computer program stored thereon, wherein the computer program implements the steps of the above method when executed by a processor.

[0025] According to a fifth aspect of the present invention, there is provided a computer program product, comprising a computer program / instructions, which implement the steps of the above method when executed by a processor.

[0026] The method and device for locating IGBT internal defects based on the current rising transient process proposed in the present invention can accurately analyze and locate the defect positions inside the IGBT, including collector defects, gate defects and emitter defects, by observing the gate-emitter voltage and collector current of the IGBT device. This significantly improves the accuracy and reliability of IGBT status monitoring, which is of great practical significance for ensuring the safe and stable operation of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0028] Figure 1 It is a flow chart of an IGBT internal defect location method based on a current rising transient process;

[0029] Figure 2 is a schematic diagram of the commutation loop structure of a half-bridge circuit model provided by an embodiment of the present invention;

[0030] Figure 3 Schematic diagram of the waveform of the transient process of the IGBT when it is turned on according to the embodiment of the present invention;

[0031] Figure 4 is an internal structure diagram of an IGBT when a collector defect is provided in an embodiment of the present invention;

[0032] Figure 5 is an internal structure diagram of an IGBT with a gate defect provided by an embodiment of the present invention;

[0033] Figure 6 is an internal structure diagram of an IGBT with an emitter defect provided by an embodiment of the present invention;

[0034] Figure 7 It is a structural schematic diagram of an IGBT internal defect location device based on a current rising transient process;

[0035] Figure 8 It is a structural schematic diagram of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0036] To make the purpose, technical solution and advantages of the embodiments of the present invention more clear, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings. Here, the exemplary embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0037] like Figure 1 FIG. 1 is a flow chart of a method for locating internal defects of an IGBT based on a current rising transient process provided by an embodiment of the present invention. The method comprises the following steps:

[0038] Step S101: obtaining a waveform diagram of a current rising transient process when the IGBT is turned on, wherein the waveform diagram includes a current rising stage.

[0039] Take a half-bridge circuit model containing IGBT as an example. Figure 2 The figure shows the commutation loop structure of the half-bridge circuit model. The circuit model should include the gate voltage ( u GE )、Collector-emitter voltage( u CE )、Collector current( ic) and other key parameter measurement points. Record the waveform of the transient process of the current rise when the IGBT is just turned on. Figure 3 The waveform diagram of the transient process when the IGBT is turned on is shown, wherein the t1~t2 stage is the current rising stage, which is the stage involved in realizing the internal defect location of the IGBT in this application.

[0040] Step S102: obtaining the control relationship between the gate voltage and the collector current in the current rising stage.

[0041] In order to obtain the control relationship between the gate voltage and the collector current in the current rising stage, this application first defines a parameter τ 0, τ 0 is shown in the following formula (1):

[0042] τ 0 =R G,on C ies (1)

[0043] In the above formula (1), R G,on is the gate turn-on resistance, C ies It is the gate input capacitance of a single IGBT chip.

[0044] The gate capacitance is charged during the turn-on process and satisfies the following relationship (2):

[0045] (2)

[0046] t 0 is the moment when the IGBT is just turned on, n is the total number of chips, U G,ON is the gate supply voltage during the turn-on process, U G,Off Gate supply voltage for the turn-off process.

[0047] Depend on Figure 3 visible, t Collector current at 0 ( ic ) does not rise immediately because during the IGBT turn-on process, the gate voltage u GE A certain threshold voltage must be reached first to turn on the IGBT, so that the collector current ic Start to rise.

[0048] Since the above formula (2) is Figure 3 of t 0 is the starting time. Figure 3 If the time t1 is the starting time, then there exists:

[0049] (3)

[0050] In the above formula, U T is the gate threshold voltage.

[0051] Gate voltage u GE The collector current i C The control relationship is shown in the following formula (4):

[0052] (4)

[0053] In the above formula (4), μ n is the electron mobility, α pnp is the transistor transport coefficient, w is the gate channel width, l is the gate channel length, c ox is the gate channel capacitance per unit area, is the gate threshold voltage.

[0054] If Figure 3 The time t1 is the starting time, and the above formula (4) can be written as:

[0055] (5)

[0056] Step S103: detecting the gate voltage and the collector current.

[0057] During the IGBT turn-on process, the gate voltage is recorded in real time u GE and collector current ic The gate voltage monitored in real time u GE and collector current ic The data is recorded and a waveform graph is generated.

[0058] Step S104: comparing the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether a collector defect occurs.

[0059] Preferably, this step may further include: determining whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is less than the normal collector current; if the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is less than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

[0060] This is because, when a collector defect occurs ( Figure 4Draw an “×” position as shown, Figure 4 is the internal structure diagram of IGBT), which does not affect the gate charging process (the above equations (2) and (3)), but some chips i C is 0.

[0061] At this time, the collector current after the defect occurs i C,fault The changing rules are:

[0062] (6)

[0063] If the gate voltage after the defect occurs is u GE,fault , then the criterion for the occurrence of collector defects is:

[0064] u GE,fault = u GE ,and i C,fault < i C (7)

[0065] That is, as long as the above formula (7) is satisfied, it can be determined that a collector defect has occurred.

[0066] Step S105: comparing the rising rates of the gate voltage after the defect occurs with the normal gate voltage, and the rising rates of the collector current after the defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs.

[0067] Preferably, this step may further include: determining whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; if the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

[0068] This is because gate (G) or emitter (E) defects affect the gate charging process and collector current i C , which is different from collector defects. Gate defects such as Figure 5 At the position marked with “×”, the emitter defect is as follows Figure 6 Draw an “×” position as shown.

[0069] Gate voltage after gate (G) or emitter (E) defects u GE,fault The changing rules are:

[0070] (8)

[0071] After the defect occurs u GE,fault Rise rate faster than u GE , where n is the total number of chips and m is the number of chips with packaging defects.

[0072] Collector current after gate (G) or emitter (E) defects i C,fault The changing rules are:

[0073] (9)

[0074] The current change rate is:

[0075] (10)

[0076] In formula (10), h is:

[0077] (11)

[0078] right i C,fault Find the partial derivative of the rate of change:

[0079] (12)

[0080] By solving formula (12), we can get:

[0081] (13)

[0082] From formula (13), it can be obtained that the larger nm is, the smaller the current rise rate is. When a gate (G) or emitter (E) defect occurs, the number of chips actually working is nm, which is less than the total number of chips n. Therefore, the current rise rate d iC,fault / dt will increase.

[0083] Therefore, the criteria for the occurrence of gate (G) or emitter (E) defects are:

[0084] (14)

[0085] That is, as long as the above formula (14) is satisfied, it can be determined that a gate or emitter defect has occurred.

[0086] From the above, it can be seen that the IGBT internal defect location method based on the current rise transient process proposed by the present invention can accurately analyze and locate the defect position inside the IGBT, including collector defects, gate defects and emitter defects, by observing the gate-emitter voltage and collector current of the IGBT device. It significantly improves the accuracy and reliability of IGBT status monitoring, which is of great practical significance for ensuring the safe and stable operation of the equipment.

[0087] like Figure 7 The figure shows a schematic diagram of the structure of an IGBT internal defect location device based on a current rise transient process provided by an embodiment of the present application, the device comprising: a waveform acquisition unit 710, a control relationship acquisition unit 720, a detection unit 730, a first defect location unit 740 and a second defect location unit 750. The control relationship acquisition unit 720 is connected to the waveform acquisition unit 710 and the detection unit 730 respectively, and the first defect location unit 740 and the second defect location unit 750 are connected to the detection unit 730 respectively.

[0088] The waveform acquisition unit 710 is used to acquire a waveform diagram of a current rising transient process when the IGBT is turned on, wherein the waveform diagram includes a current rising stage.

[0089] The control relationship acquisition unit 720 is used to acquire the control relationship between the gate voltage and the collector current in the current rising stage.

[0090] The detection unit 730 is used to detect the gate voltage and the collector current.

[0091] The first defect location unit 740 is used to compare the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether the collector defect occurs.

[0092] The second defect location unit 750 is used to compare the rising rate of the gate voltage after the defect occurs with the normal gate voltage, and the rising rate of the collector current after the defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs.

[0093] Preferably, the control relationship between the gate voltage and the collector current in the current rising stage is as follows:

[0094] ;

[0095] ;

[0096] ;

[0097] In the above formula, ic is the collector current; uGE is the gate voltage; n is the total number of chips; t is time, t0 is the IGBT turn-on time; μ n is the electron mobility; α pnp is the transistor transport coefficient; w is the gate channel width; l is the gate channel length; c ox is the capacitance per unit area of ​​the gate channel; R G,on is the gate turn-on resistor; C ies Input capacitance of the gate of a single IGBT chip; U G,ON is the gate supply voltage during the turn-on process, U G,Off is the gate supply voltage during the turn-off process; U T is the gate threshold voltage.

[0098] Preferably, the above-mentioned first defect location unit 740 is specifically used to: determine whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is smaller than the normal collector current; if the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is smaller than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

[0099] Preferably, the second defect location unit 750 is specifically used to determine whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; if the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

[0100] The detailed description of each of the above units can be found in the corresponding description in the aforementioned method embodiment, which will not be further elaborated here.

[0101] From the above, it can be seen that the IGBT internal defect location device based on the current rise transient process proposed by the present invention can accurately analyze and locate the defect position inside the IGBT, including collector defects, gate defects and emitter defects, by observing the gate-emitter voltage and collector current of the IGBT device. It significantly improves the accuracy and reliability of IGBT state monitoring, which is of great practical significance for ensuring the safe and stable operation of the equipment.

[0102] Figure 8 is a schematic diagram of an electronic device provided by an embodiment of the present invention. Figure 8 The electronic device shown is a general data processing device, which includes a general computer hardware structure, which at least includes a processor 801 and a memory 802. The processor 801 and the memory 802 are connected via a bus 803. The memory 802 is suitable for storing one or more instructions or programs executable by the processor 801. The one or more instructions or programs are executed by the processor 801 to implement the steps in the above-mentioned IGBT internal defect location method based on the current rise transient process.

[0103] The processor 801 may be an independent microprocessor or a collection of one or more microprocessors. Thus, the processor 801 executes the commands stored in the memory 802 to execute the method flow of the embodiment of the present invention as described above to realize the processing of data and the control of other devices. The bus 803 connects the above-mentioned multiple components together, and at the same time connects the above-mentioned components to the display controller 804 and the display device and the input / output (I / O) device 805. The input / output (I / O) device 805 may be a mouse, a keyboard, a modem, a network interface, a touch input device, a somatosensory input device, a printer, and other devices known in the art. Typically, the input / output (I / O) device 805 is connected to the system via an input / output (I / O) controller 806.

[0104] The memory 802 may store software components such as an operating system, a communication module, an interaction module, and an application program. Each of the modules and applications described above corresponds to a set of executable program instructions that implement one or more functions and methods described in the embodiments of the invention.

[0105] An embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the above-mentioned IGBT internal defect location method based on the current rise transient process are implemented.

[0106] An embodiment of the present invention further provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the above-mentioned IGBT internal defect location method based on the current rise transient process.

[0107] As can be seen from the above, the IGBT internal defect location method and device based on the current rise transient process proposed by the present invention can accurately analyze and locate the internal defect position of the IGBT, including collector defects, gate defects and emitter defects, by observing the gate-emitter voltage and collector current of the IGBT device. This significantly improves the accuracy and reliability of IGBT status monitoring, which is of great practical significance for ensuring the safe and stable operation of the equipment.

[0108] The preferred embodiments of the present invention are described above with reference to the accompanying drawings. Many features and advantages of these embodiments are clear from this detailed description, and therefore the claims are intended to cover all such features and advantages of these embodiments that fall within their true spirit and scope. In addition, since many modifications and changes are easily conceivable to those skilled in the art, it is not intended to limit the embodiments of the present invention to the precise structure and operation illustrated and described, but all suitable modifications and equivalents falling within its scope may be covered.

[0109] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0110] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0111] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0112] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0113] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for locating internal defects of an IGBT based on a current rising transient process, characterized in that: The method comprises: Obtaining a waveform diagram of a current rising transient process when the IGBT is turned on, wherein the waveform diagram includes a current rising stage; The control relationship between the gate voltage and the collector current in the current rising stage is obtained. The control relationship between the gate voltage and the collector current in the current rising stage is as follows: ； ； ； In the above formula, i C is the collector current; u GE is the gate voltage; n is the total number of chips; t is time, t0 is the IGBT turn-on time; μ n is the electron mobility; α pnp is the transistor transport coefficient; w is the gate channel width; l is the gate channel length; c ox is the capacitance per unit area of ​​the gate channel; R G,on is the gate turn-on resistor; C ies Input capacitance of the gate of a single IGBT chip; U G,ON is the gate supply voltage during the turn-on process, U G,Off is the gate supply voltage during the turn-off process; U T is the gate threshold voltage; detecting the gate voltage and the collector current; Compare the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether a collector defect occurs; The rising rates of the gate voltage after the defect occurs and the normal gate voltage, as well as the rising rates of the collector current after the defect occurs and the normal collector current are compared to determine whether a gate defect or an emitter defect occurs.

2. The IGBT internal defect location method based on the current rise transient process according to claim 1, characterized in that: The comparison of the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether the collector defect occurs includes: Determine whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is less than the normal collector current; If the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is less than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

3. The IGBT internal defect location method based on the current rise transient process according to claim 1, characterized in that: The comparison of the rising rate of the gate voltage after the defect occurs with the normal gate voltage, and the rising rate of the collector current after the defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs includes: Determine whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; If the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

4. An IGBT internal defect location device based on the current rising transient process, characterized in that: The device comprises: A waveform acquisition unit, used to acquire a waveform diagram of a current rising transient process when the IGBT is turned on, wherein the waveform diagram includes a current rising stage; A control relationship acquisition unit, used to acquire the control relationship between the gate voltage and the collector current in the current rising stage; A detection unit, used for detecting the gate voltage and the collector current; A first defect location unit is used to compare the gate voltage after the defect occurs with the normal gate voltage, and the collector current after the defect occurs with the normal collector current to determine whether a collector defect occurs; The second defect location unit is used to compare the rising rate of the gate voltage after the defect occurs with the normal gate voltage, and the rising rate of the collector current after the defect occurs with the normal collector current to determine whether a gate defect or an emitter defect occurs.

5. The IGBT internal defect location device based on current rise transient process according to claim 4, characterized in that: The control relationship between the gate voltage and the collector current in the current rising stage is as follows: ； ； ； In the above formula, i C is the collector current; u GE is the gate voltage; n is the total number of chips; t is time, t0 is the IGBT turn-on time; μ n is the electron mobility; α pnp is the transistor transport coefficient; w is the gate channel width; l is the gate channel length; c ox is the capacitance per unit area of ​​the gate channel; R G,on is the gate turn-on resistor; C ies Input capacitance of the gate of a single IGBT chip; U G,ON is the gate supply voltage during the turn-on process, U G,Off is the gate supply voltage during the turn-off process; U T is the gate threshold voltage.

6. The IGBT internal defect location device based on current rise transient process according to claim 4, characterized in that: The first defect location unit is specifically used to determine whether the gate voltage after the defect occurs is equal to the normal gate voltage, and whether the collector current after the defect occurs is less than the normal collector current; if the gate voltage after the defect occurs is equal to the normal gate voltage, and the collector current after the defect occurs is less than the normal collector current, it is determined that a collector defect has occurred inside the IGBT.

7. The IGBT internal defect location device based on current rise transient process according to claim 4, characterized in that: The second defect location unit is specifically used to: determine whether the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and whether the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current; If the rising rate of the gate voltage after the defect occurs is greater than or equal to the rising rate of the normal gate voltage, and the rising rate of the collector current after the defect occurs is greater than or equal to the rising rate of the normal collector current, it is determined that a gate defect or an emitter defect has occurred inside the IGBT.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 3 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 3 are implemented.

10. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instructions are executed by a processor, the steps of the method according to any one of claims 1 to 3 are implemented.

Images