Ultrahigh-temperature aging test method for integrated circuit

Abstract

The invention relates to the technical field of integrated circuit reliability, and particularly discloses an integrated circuit ultra-high temperature aging test method, which comprises the following steps: constructing an ultra-high temperature aging test system; wherein the ultra-high-temperature aging test system comprises an independent temperature control module, a socket, an ultra-high-temperature test plate and an ultra-high-temperature welding material, the independent temperature control module is connected with the socket, and the socket is welded on the ultra-high-temperature test plate through the ultra-high-temperature welding material; building an ultra-high temperature test environment in the socket based on an ultra-high temperature aging test system; placing the to-be-tested integrated circuit in an ultra-high temperature test environment for an aging test, and monitoring the aging test data of the to-be-tested integrated circuit in real time in the aging test process of the to-be-tested integrated circuit; and verifying the monitored burn-in test data of the to-be-tested integrated circuit so as to judge the stability of the to-be-tested integrated circuit in the ultra-high temperature test environment. According to the integrated circuit ultra-high temperature aging test method provided by the invention, the aging test efficiency is improved, and the cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit reliability, and in particular to an ultra-high temperature aging test method for integrated circuits. Background Art

[0002] With the advancement of the national strategy for the localization of key components such as high-performance integrated circuits and discrete devices, domestic design companies have vigorously promoted the localization process of components. The ability of integrated circuits to undergo aging tests in ultra-high temperature environments indicates that domestic integrated circuits have been able to match the world level in some areas, and is proof that major national equipment has made breakthroughs in high-precision and cutting-edge fields. Due to the process and packaging factors of integrated circuits, defects are introduced during the manufacturing process. As the application environment of integrated circuits becomes more and more complex, the actual application environment of some products has reached 250°C, and conventional aging test hardware equipment can no longer meet the requirements. Ultra-high temperatures have put forward more stringent requirements for PCB boards, welding materials, socket selection, data monitoring, etc. for aging tests. Ultra-high temperature aging tests for integrated circuits have become the most critical link in their development and application. By conducting ultra-high temperature aging tests on integrated circuits and testing their performance, the application quality of integrated circuits can be guaranteed. Summary of the invention

[0003] In view of the defects and shortcomings in the prior art, the present invention provides an ultra-high temperature aging test method for integrated circuits, which improves the aging test efficiency and reduces the cost.

[0004] As a first aspect of the present invention, a method for testing an ultra-high temperature aging of an integrated circuit is provided, the method comprising: Step S1: constructing an ultra-high temperature aging test system; wherein the ultra-high temperature aging test system comprises an independent temperature control module, a socket, an ultra-high temperature test plate and an ultra-high temperature welding material, the independent temperature control module is connected to the socket, and the socket is welded to the ultra-high temperature test plate through the ultra-high temperature welding material; Step S2: Building an ultra-high temperature test environment in the socket based on the ultra-high temperature aging test system; Step S3: placing the IC to be tested in the ultra-high temperature test environment for burn-in test, and during the burn-in test process of the IC to be tested, monitoring the burn-in test data of the IC to be tested in real time; Step S4: verifying the monitored burn-in test data of the integrated circuit to be tested to determine the stability of the integrated circuit to be tested in the ultra-high temperature test environment.

[0005] Furthermore, it also includes: Based on the test requirements of the ultra-high temperature test environment and in accordance with the functions of the integrated circuit to be tested, the peripheral circuit of the integrated circuit to be tested is designed to form a temperature control scheme independent of the ultra-high temperature aging test system.

[0006] Furthermore, the ultra-high temperature aging test system is constructed, further comprising: The ultra-high temperature test plate and the ultra-high temperature welding material are screened out according to the limit parameters of the integrated circuit to be tested and the limit temperature of the ultra-high temperature test environment.

[0007] Furthermore, the socket includes a heating rod and a temperature sensor, the independent temperature control module converts the 220V AC power to drive the heating rod to heat the socket, and the temperature sensor detects the temperature of the ultra-high temperature test environment in the socket in real time; wherein, When the detected temperature of the ultra-high temperature test environment is lower than the set temperature, the independent temperature control module increases the power of the heating rod to heat the socket; when the detected temperature of the ultra-high temperature test environment is higher than the set temperature, the independent temperature control module reduces the power of the heating rod to dissipate heat for the socket, thereby achieving a dynamic balance of the ultra-high temperature test environment temperature.

[0008] Furthermore, the independent temperature control module includes an AC voltage conversion port circuit, a level conversion port circuit, an overvoltage protection circuit, a fault self-recovery function circuit, a PID coefficient adjustable function circuit and an output port circuit.

[0009] Furthermore, a protective cover is provided on the outside of the socket, and the protective cover can maintain the long-term stability of the ultra-high temperature test environment.

[0010] Furthermore, it also includes: Monitoring the burn-in test data of the integrated circuit to be tested in real time through a host computer, wherein the burn-in test data of the integrated circuit to be tested includes voltage data and current data; The stability of the integrated circuit to be tested in the ultra-high temperature test environment is determined by the host computer according to the burn-in test data of the integrated circuit to be tested.

[0011] The integrated circuit ultra-high temperature aging test method provided by the present invention has the following advantages: it provides a feasible method for integrated circuit ultra-high temperature aging test, improves aging test efficiency, and reduces costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present invention, but do not constitute a limitation of the present invention.

[0013] Figure 1 The present invention provides a flow chart of the integrated circuit ultra-high temperature aging test method.

[0014] Figure 2 A flowchart of a specific implementation of the integrated circuit ultra-high temperature aging test method provided by the present invention. DETAILED DESCRIPTION

[0015] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0016] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiment of the present invention. Obviously, the described embodiment is only a part of the embodiment of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work should fall within the scope of protection of the present invention.

[0017] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0018] In this embodiment, a method for testing an ultra-high temperature aging of an integrated circuit is provided. Figure 1 The flowchart of the ultra-high temperature aging test method for integrated circuits provided by the present invention is as follows: Figure 1 Please also refer to Figure 2 , the integrated circuit ultra-high temperature aging test method comprises: Step S1: constructing an ultra-high temperature aging test system; wherein the ultra-high temperature aging test system comprises an independent temperature control module, a socket, an ultra-high temperature test plate and an ultra-high temperature welding material, the independent temperature control module is connected to the socket, and the socket is welded to the ultra-high temperature test plate through the ultra-high temperature welding material; Preferably, the ultra-high temperature aging test system further comprises: The type of the ultra-high temperature test plate and the type of the ultra-high temperature welding material are screened out according to the limit parameters (voltage, current, etc.) of the integrated circuit to be tested and the limit temperature of the ultra-high temperature test environment.

[0019] Specifically, the independent temperature control module includes an AC voltage conversion port circuit, a level conversion port circuit, an overvoltage protection circuit, a fault self-recovery function circuit, a PID coefficient adjustable function circuit and an output port circuit.

[0020] Step S2: Building an ultra-high temperature test environment in the socket based on the ultra-high temperature aging test system; Preferably, the socket includes a heating rod and a temperature sensor, the independent temperature control module converts the 220V AC power to drive the heating rod to heat the socket, and the temperature sensor detects the temperature of the ultra-high temperature test environment in the socket in real time; wherein, When the detected temperature of the ultra-high temperature test environment is lower than the set temperature, the independent temperature control module increases the power of the heating rod to heat the socket; when the detected temperature of the ultra-high temperature test environment is higher than the set temperature, the independent temperature control module reduces the power of the heating rod to dissipate heat for the socket, thereby achieving a dynamic balance of the ultra-high temperature test environment temperature.

[0021] It should be noted that the temperature error value of the temperature sensor is ±1°C.

[0022] Specifically, a protective cover is provided on the outside of the socket, and the protective cover is made of special protective engineering materials. The protective cover can maintain the long-term stability of the ultra-high temperature test environment.

[0023] Step S3: placing the IC to be tested in the ultra-high temperature test environment for burn-in test, and during the burn-in test process of the IC to be tested, monitoring the burn-in test data of the IC to be tested in real time; Step S4: verifying the monitored burn-in test data of the integrated circuit to be tested to determine the stability of the integrated circuit to be tested in the ultra-high temperature test environment.

[0024] Specifically, it also includes: Monitoring the burn-in test data of the integrated circuit to be tested in real time through a host computer, wherein the burn-in test data of the integrated circuit to be tested includes voltage data and current data; The stability of the integrated circuit to be tested in the ultra-high temperature test environment is determined by the host computer according to the burn-in test data of the integrated circuit to be tested.

[0025] Preferably, it also includes: Based on the test requirements of the ultra-high temperature test environment and in accordance with the functions of the integrated circuit to be tested, the peripheral circuit of the integrated circuit to be tested is designed to form a temperature control scheme independent of the ultra-high temperature aging test system.

[0026] The integrated circuit ultra-high temperature aging test method provided by the present invention provides a feasible method for integrated circuit ultra-high temperature aging test, improves the aging test efficiency and reduces the cost.

[0027] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An ultra-high temperature aging test method for integrated circuits, characterized in that: The integrated circuit ultra-high temperature aging test method comprises: Step S1: constructing an ultra-high temperature aging test system; wherein the ultra-high temperature aging test system comprises an independent temperature control module, a socket, an ultra-high temperature test plate and an ultra-high temperature welding material, the independent temperature control module is connected to the socket, and the socket is welded to the ultra-high temperature test plate through the ultra-high temperature welding material; Step S2: Building an ultra-high temperature test environment in the socket based on the ultra-high temperature aging test system; Step S3: placing the IC to be tested in the ultra-high temperature test environment for burn-in test, and during the burn-in test process of the IC to be tested, monitoring the burn-in test data of the IC to be tested in real time; Step S4: verifying the monitored burn-in test data of the integrated circuit to be tested to determine the stability of the integrated circuit to be tested in the ultra-high temperature test environment.

2. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: Also includes: Based on the test requirements of the ultra-high temperature test environment and in accordance with the functions of the integrated circuit to be tested, the peripheral circuit of the integrated circuit to be tested is designed to form a temperature control scheme independent of the ultra-high temperature aging test system.

3. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: The ultra-high temperature aging test system further includes: The ultra-high temperature test plate and the ultra-high temperature welding material are screened out according to the limit parameters of the integrated circuit to be tested and the limit temperature of the ultra-high temperature test environment.

4. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: The socket includes a heating rod and a temperature sensor. The independent temperature control module converts the 220V AC power and drives the heating rod to heat the socket. The temperature sensor detects the temperature of the ultra-high temperature test environment in the socket in real time. When the detected temperature of the ultra-high temperature test environment is lower than the set temperature, the independent temperature control module increases the power of the heating rod to heat the socket; when the detected temperature of the ultra-high temperature test environment is higher than the set temperature, the independent temperature control module reduces the power of the heating rod to dissipate heat for the socket, thereby achieving a dynamic balance of the ultra-high temperature test environment temperature.

5. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: The independent temperature control module includes an AC voltage conversion port circuit, a level conversion port circuit, an overvoltage protection circuit, a fault self-recovery function circuit, a PID coefficient adjustable function circuit and an output port circuit.

6. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: A protective cover is arranged outside the socket, and the protective cover can maintain the long-term stability of the ultra-high temperature test environment.

7. The ultra-high temperature aging test method for integrated circuits according to claim 1, characterized in that: Also includes: Monitoring the burn-in test data of the integrated circuit to be tested in real time through a host computer, wherein the burn-in test data of the integrated circuit to be tested includes voltage data and current data; The stability of the integrated circuit to be tested in the ultra-high temperature test environment is determined by the host computer according to the burn-in test data of the integrated circuit to be tested.

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