Packaging structure of power module, electric drive system and vehicle

Abstract

The invention relates to a packaging structure of a power module, an electric drive system and a vehicle. The packaging structure of the power module comprises at least one full-bridge arm, a plurality of metal terminals, a first copper-clad substrate, a heat dissipation substrate and a second copper-clad substrate, wherein the first copper-clad substrate, the heat dissipation substrate and the second copper-clad substrate are sequentially stacked; the metal terminal comprises a positive terminal, a negative terminal, a midpoint terminal and an output terminal, the positive terminal is located on the side, away from the heat dissipation substrate, of the first copper-clad substrate, the negative terminal is located on the side, away from the heat dissipation substrate, of the second copper-clad substrate, and the midpoint terminal and the output terminal extend to the second copper-clad substrate along the first copper-clad substrate; the full-bridge arm comprises an upper bridge arm and a lower bridge arm, the upper bridge arm is located on the side, away from the heat dissipation substrate, of the first copper-clad substrate and connected with the positive terminal, the midpoint terminal and the output terminal, and the lower bridge arm is located on the side, away from the heat dissipation substrate, of the second copper-clad substrate and connected with the negative terminal, the midpoint terminal and the output terminal. The packaging structure of the power module is designed in a layered mode, and the area proportion is small.

Description

Technical Field

[0001] The present application relates to the technical field of electric vehicles, and in particular to a packaging structure of a power module, an electric drive system and a vehicle. Background Art

[0002] With the development of electric vehicles, electric vehicles tend to develop towards high voltage, which can currently reach 800V to 1000V. The development of high voltage is mainly to achieve high-voltage fast charging of electric vehicles and shorten the charging time. However, a high-voltage 800V system usually requires a power module with a withstand voltage of 1200V. Traditional silicon-based IGBTs generally have a withstand voltage of 750V. After increasing to 1200V, the switching loss is very large, resulting in a significant reduction in system efficiency. Therefore, silicon carbide IGBTs are currently used, but the cost of silicon carbide IGBTs is more than three times that of traditional silicon-based IGBTs. In addition, the rapid switching of high voltage and high current will also bring about a large voltage and current shock, affecting the reliability of the device, and will also cause the device's electromagnetic compatibility performance and NVH (a general term for noise, vibration and acoustic harshness) performance to be greatly reduced.

[0003] Currently, there are attempts to use a three-level topology to replace the two-level topology. The three-level topology adds 6 IGBTs and 6 diodes compared to the conventional two-level topology, and the three-level topology requires a larger layout space. Summary of the invention

[0004] Based on this, it is necessary to provide a packaging structure of a power module, an electric drive system and a vehicle with a small area occupancy.

[0005] In a first aspect, the present application provides a packaging structure of a power module, comprising: at least one full-bridge arm, a plurality of metal terminals, and a first copper-clad substrate, a heat dissipation substrate, and a second copper-clad substrate stacked in sequence; wherein:

[0006] The plurality of metal terminals include a positive terminal, a negative terminal, a midpoint terminal and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend from the first copper-clad substrate to the second copper-clad substrate respectively;

[0007] The full-bridge arm includes an upper bridge arm and a lower bridge arm, the upper bridge arm is located on a side of the first copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the positive terminal, the midpoint terminal and the output terminal, and the lower bridge arm is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the negative terminal, the midpoint terminal and the output terminal.

[0008] In one embodiment, the upper bridge arm includes: a first reverse conducting insulated gate bipolar transistor, a second reverse conducting insulated gate bipolar crystal and a first diode; wherein the drain of the second reverse conducting insulated gate bipolar transistor is respectively connected to the source of the first reverse conducting insulated gate bipolar crystal, the cathode of the first diode and the output terminal, the drain of the first reverse conducting insulated gate bipolar crystal is connected to the positive terminal, and the anode of the first diode is connected to the midpoint terminal.

[0009] In one embodiment, a first copper-clad region, a second copper-clad region, a third copper-clad region and a fourth copper-clad region are further provided on a side of the first copper-clad substrate away from the heat dissipation substrate, wherein the first copper-clad region is provided corresponding to the first reverse-conducting insulated gate bipolar transistor and is respectively in contact with the drain of the first reverse-conducting insulated gate bipolar transistor, the positive terminal and the third copper-clad region, the second copper-clad region is provided corresponding to the second reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor, the third copper-clad region is in contact with the midpoint terminal, and the fourth copper-clad region is in contact with the output terminal;

[0010] The source of the first reverse conducting insulated gate bipolar transistor is connected to the second copper clad area via a bonding wire, the source of the second reverse conducting insulated gate bipolar transistor is connected to the fourth copper clad area via a bonding wire, the cathode of the first diode is connected to the third copper clad area via a bonding wire, and the anode of the first diode is connected to the second copper clad area via a bonding wire.

[0011] In one embodiment, the lower bridge arm includes: a third reverse conducting insulated gate bipolar crystal, a fourth reverse conducting insulated gate bipolar crystal and a second diode; wherein the source of the third reverse conducting insulated gate bipolar crystal is respectively connected to the drain of the fourth reverse conducting insulated gate bipolar crystal, the anode of the second diode and the output terminal, the source of the fourth reverse conducting insulated gate bipolar crystal is connected to the negative terminal, and the cathode of the second diode is connected to the midpoint terminal.

[0012] In one of the embodiments, a fifth copper-clad region, a sixth copper-clad region, a seventh copper-clad region and an eighth copper-clad region are further provided on a side of the second copper-clad substrate away from the heat dissipation substrate, wherein the fifth copper-clad region is provided corresponding to the fourth reverse-conducting insulated gate bipolar transistor, and is respectively in contact with the source of the fourth reverse-conducting insulated gate bipolar transistor, the negative terminal and the seventh copper-clad region, the sixth copper-clad region is provided corresponding to the third reverse-conducting insulated gate bipolar transistor, and is in contact with the source of the third reverse-conducting insulated gate bipolar transistor, the seventh copper-clad region is in contact with the midpoint terminal, and the eighth copper-clad region is in contact with the output terminal;

[0013] The drain of the fourth reverse conducting insulated gate bipolar transistor is connected to the sixth copper clad region via a bonding wire, the drain of the third reverse conducting insulated gate bipolar transistor is connected to the eighth copper clad region via a bonding wire, the cathode of the second diode is connected to the seventh copper clad region via a bonding wire, and the anode of the second diode is connected to the sixth copper clad region via a bonding wire.

[0014] In one of the embodiments, the packaging structure takes the heat dissipation substrate as a symmetry axis, and the upper bridge arm and the lower bridge arm are symmetrically arranged along a direction from the heat dissipation substrate to the first copper-clad substrate.

[0015] In one of the embodiments, the packaging structure further includes: a plurality of gate terminals, some of the signal terminals are arranged on a side of the first copper-clad substrate away from the heat dissipation substrate and connected to the gate of the upper bridge arm, and the remaining signal terminals are arranged on a side of the second copper-clad substrate away from the heat dissipation substrate and connected to the gate of the lower bridge arm.

[0016] In one embodiment, the packaging structure includes three full-bridge arms, and the metal terminal further includes three output terminals;

[0017] Wherein, each of the full-bridge arms is respectively connected to the positive terminal, the negative terminal and the midpoint terminal, and each of the full-bridge arms is respectively connected to one of the output terminals in a one-to-one correspondence.

[0018] In one embodiment, the packaging structure further includes:

[0019] A first heat sink is located on a side of the upper bridge arm away from the first copper-clad substrate;

[0020] The second heat sink is located on a side of the lower bridge arm away from the second copper-clad substrate.

[0021] In a second aspect, the present application further provides an electric drive system, which includes the packaging structure of the power module provided by any of the above embodiments.

[0022] In a third aspect, the present application also provides a vehicle, comprising an electric drive system as provided in any of the above embodiments.

[0023] In the packaging structure of the power module, the electric drive system and the vehicle, the packaging structure of the power module includes at least one full-bridge arm, a plurality of metal terminals and a first copper-clad substrate, a heat dissipation substrate and a second copper-clad substrate stacked in sequence. The full-bridge arm includes an upper bridge arm and a lower bridge arm, the upper bridge arm is located on the side of the first copper-clad substrate away from the heat dissipation substrate, and the lower bridge arm is located on the side of the second copper-clad substrate away from the heat dissipation substrate, that is, the power module is arranged in layers, from top to bottom, the lower bridge arm, the second copper-clad substrate, the heat dissipation substrate, the first copper-clad substrate and the upper bridge arm, such a layered arrangement can reduce the area occupied by the power module, and can arrange a three-level power module in the limited layout space of the electric vehicle. In addition, the plurality of metal terminals include a positive terminal, a negative terminal, a midpoint terminal and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend from the first copper-clad substrate to the second copper-clad substrate respectively, so that the loop area surrounded by the DC bus connected to the metal terminal can be reduced, thereby reducing stray parameters. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 It is one of the top views of the packaging structure of the power module of one embodiment;

[0026] Figure 2 It is one of the bottom views of the packaging structure of the power module of one embodiment;

[0027] Figure 3 is a schematic cross-sectional view of a packaging structure of a power module according to an embodiment;

[0028] Figure 4 A circuit topology diagram of a single full-bridge arm in a packaging structure of a power module of an embodiment;

[0029] Figure 5 The second top view of the packaging structure of the power module of one embodiment;

[0030] Figure 6 A second bottom view of the packaging structure of a power module according to an embodiment;

[0031] Figure 7A third top view of the packaging structure of a power module according to an embodiment;

[0032] Figure 8 A circuit topology diagram of three full-bridge arms connected in parallel in a packaging structure of a power module of an embodiment;

[0033] Fig. 9 A top view of three full-bridge arms connected in parallel in a packaging structure of a power module according to an embodiment;

[0034] Fig.10 FIG. 4 is a schematic cross-sectional view of a packaging structure of a power module according to another embodiment.

[0035] Description of reference numerals:

[0036] 100- full bridge arm, 110 upper bridge arm, 111- first reverse conducting insulated gate bipolar transistor, 112- second reverse conducting insulated gate bipolar transistor, 113- first diode, 120- lower bridge arm, 121- third reverse conducting insulated gate bipolar transistor, 122- fourth reverse conducting insulated gate bipolar transistor, 123- second diode, 200- metal terminal, 210- positive terminal, 220- midpoint terminal, 230- negative terminal, 2 40-output terminal, 300-first copper-clad substrate, 400-second copper-clad substrate, 500-heat dissipation substrate, 610-first copper-clad area, 620-second copper-clad area, 630-third copper-clad area, 640-fourth copper-clad area, 650-fifth copper-clad area, 660-sixth copper-clad area, 670-seventh copper-clad area, 680-eighth copper-clad area, 700-gate terminal, 810-first heat sink, 820-second heat sink. DETAILED DESCRIPTION

[0037] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0039] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. For example, without departing from the scope of this application, the first reverse conducting insulated gate bipolar crystal may be referred to as the second reverse conducting insulated gate bipolar crystal, and similarly, the second reverse conducting insulated gate bipolar crystal may be referred to as the first reverse conducting insulated gate bipolar crystal. Both the first reverse conducting insulated gate bipolar crystal and the second reverse conducting insulated gate bipolar crystal are reverse conducting insulated gate bipolar crystals, but they are not the same reverse conducting insulated gate bipolar crystal.

[0040] It can be understood that “at least one” means one or more, “plurality” means two or more, and “at least a portion of an element” means a part or all of an element.

[0041] When used herein, the singular forms "a", "an" and " / the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0042] In one embodiment, Figure 1-Figure 3 As shown, the present application provides a packaging structure of a power module, including at least one full-bridge arm 100, a plurality of metal terminals 200, and a first copper-clad substrate 300, a heat dissipation substrate 500, and a second copper-clad substrate 400 stacked in sequence. The first copper-clad substrate 300 and the second copper-clad substrate 400 can be connected to the heat dissipation substrate 500 through solder layers, respectively.

[0043] The plurality of metal terminals 200 include a positive terminal 210, a negative terminal 230, a midpoint terminal 220 and an output terminal 240, wherein the positive terminal 210 is located on a side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, the negative terminal 230 is located on a side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and the midpoint terminal 220 and the output terminal 240 extend from the first copper-clad substrate 300 to the second copper-clad substrate 400, respectively. The positive terminal 210, the negative terminal 230, the midpoint terminal 220 and the output terminal 240 may adopt a laminated busbar.

[0044] The full-bridge arm 100 includes an upper bridge arm 110 and a lower bridge arm 120. The upper bridge arm 110 is located on a side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, and is respectively connected to the positive terminal 210, the midpoint terminal 220 and the output terminal 240. The lower bridge arm 120 is located on a side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and is respectively connected to the negative terminal 230, the midpoint terminal 220 and the output terminal 240.

[0045] It can be understood that the positive terminal 210 and the upper bridge arm 110 are arranged on the first copper-clad substrate 300, the negative terminal 230 and the lower bridge arm 120 are arranged on the second copper-clad substrate 400, and the upper bridge arm 110 and the lower bridge arm 120 share the midpoint terminal 220 and the output terminal 240. Among them, the positive terminal 210 is used to connect to the positive pole of the power supply, the negative terminal 230 is used to connect to the negative pole of the power supply, and the midpoint terminal 220 can be used as the level midpoint after being connected to the full bridge arm 100. In the application process of this power module, each level change is first transformed from positive or negative to the midpoint potential, so that a better output waveform can be obtained and the electromagnetic interference problem can be improved.

[0046] In the embodiment of the present application, the packaging structure of the power module includes at least one full-bridge arm 100, a plurality of metal terminals 200, and a first copper-clad substrate 300, a heat dissipation substrate 500, and a second copper-clad substrate 400 stacked in sequence. The full-bridge arm 100 includes an upper bridge arm 110 and a lower bridge arm 120, the upper bridge arm 110 is located on the side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, and the lower bridge arm 120 is located on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, that is, the power module is arranged in layers, from top to bottom, the lower bridge arm 120, the second copper-clad substrate 400, the heat dissipation substrate 500, the first copper-clad substrate 300, and the upper bridge arm 110, such a layered arrangement can reduce the area occupied by the power module, and can be arranged in the limited layout space of the electric vehicle. Three-level power module. In addition, the multiple metal terminals 200 include a positive terminal 210, a negative terminal 230, a midpoint terminal 220 and an output terminal 240, wherein the positive terminal 210 is located on a side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, the negative terminal 230 is located on a side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and the midpoint terminal 220 and the output terminal 240 extend from the first copper-clad substrate 300 to the second copper-clad substrate 400, respectively, so that the loop area surrounded by the DC bus connected to the metal terminal can be reduced, thereby reducing the stray parameters.

[0047] In one embodiment, Figure 4 and Figure 5As shown, the upper bridge arm 110 includes a first reverse conducting insulated gate bipolar transistor 111, a second reverse conducting insulated gate bipolar transistor and a first diode 113. The drain of the second reverse conducting insulated gate bipolar transistor 112 is connected to the source of the first reverse conducting insulated gate bipolar transistor, the cathode of the first diode 113 and the output terminal 240 respectively, the drain of the first reverse conducting insulated gate bipolar transistor is connected to the positive terminal 210, and the anode of the first diode 113 is connected to the midpoint terminal 220.

[0048] When packaging, a reverse-conducting insulated gate bipolar transistor (RC-IGBT) is used. The reverse-conducting insulated gate bipolar transistor packages the IGBT and the diode together, which can reduce the chip size. The IGBT chip and the freewheeling diode chip mainly include a terminal area and a cell area. When the two devices are combined into one chip, the terminal area can be shared, so the area of ​​the terminal area can be reduced. Under normal circumstances, the area ratio of IGBT to freewheeling diode in traditional modules is generally about 2:1. RC-IGBT can integrate the freewheeling diode inside the chip while keeping the area of ​​the traditional IGBT chip basically the same (slightly increased), thereby saving the chip area of ​​the freewheeling diode part, so it can save about 1 / 3 of the total chip area. At the same time, the number of chips is reduced, and the cost of welding chips and binding wires is saved, which can greatly reduce the chip production and manufacturing costs and packaging and testing costs.

[0049] Furthermore, if Figure 5 As shown, the first copper-clad substrate 300 is further provided with a first copper-clad region 610, a second copper-clad region 620, a third copper-clad region 630 and a fourth copper-clad region 640 on the side away from the heat dissipation substrate 500. Among them, the first copper-clad region 610 is arranged corresponding to the first reverse-conducting insulated gate bipolar transistor 111, and is respectively in contact with the drain, the positive terminal 210 and the third copper-clad region 630 of the first reverse-conducting insulated gate bipolar transistor 111. The second copper-clad region 620 is arranged corresponding to the second reverse-conducting insulated gate bipolar transistor 112, and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor 112. The third copper-clad region 630 is in contact with the midpoint terminal 220, and the fourth copper-clad region 640 is in contact with the output terminal 240.

[0050] The source of the first reverse conducting insulated gate bipolar transistor 111 is connected to the second copper clad area 620 through a binding wire, the source of the second reverse conducting insulated gate bipolar transistor 112 is connected to the fourth copper clad area 640 through a binding wire, the cathode of the first diode 113 is connected to the third copper clad area 630 through a binding wire, and the anode of the first diode 113 is connected to the second copper clad area 620 through a binding wire.

[0051] The drain of the first reverse conducting insulated gate bipolar transistor 111 is electrically connected to the positive terminal 210 through the first copper-clad region 610, and the source of the first reverse conducting insulated gate bipolar transistor 111 is connected to the second copper-clad region 620 through a bonding wire, and then electrically connected to the drain of the second reverse conducting insulated gate bipolar transistor 112 through the second copper-clad region 620. The source of the second reverse conducting insulated gate bipolar transistor 112 is connected to the fourth copper-clad region 640 through a bonding wire, and is electrically connected to the output terminal 240 through the fourth copper-clad region 640. The cathode of the first diode 113 is connected to the third copper-clad region 630 through a bonding wire, and then electrically connected to the midpoint terminal 220 through the third copper-clad region 630, and the anode of the first diode 113 is connected to the second copper-clad region 620 through a bonding wire, and then electrically connected to the drain of the second reverse conducting insulated gate bipolar transistor 112 through the second copper-clad region 620.

[0052] In one embodiment, Figure 4 and Figure 6 As shown, the lower bridge arm 120 includes a third reverse conducting insulated gate bipolar transistor, a fourth reverse conducting insulated gate bipolar transistor and a second diode 123. The source of the third reverse conducting insulated gate bipolar transistor is connected to the drain of the fourth reverse conducting insulated gate bipolar transistor, the anode of the second diode 123 and the output terminal 240, respectively, the source of the fourth reverse conducting insulated gate bipolar transistor is connected to the negative terminal 230, and the cathode of the second diode 123 is connected to the midpoint terminal 220.

[0053] Furthermore, if Figure 6 As shown, a fifth copper clad region 650, a sixth copper clad region 660, a seventh copper clad region 670 and an eighth copper clad region 680 are further provided on the side of the second copper clad substrate 400 away from the heat dissipation substrate 500, wherein the fifth copper clad region 650 is provided corresponding to the fourth reverse conducting insulated gate bipolar transistor 122, and is respectively in contact with the source, the negative terminal 230 and the seventh copper clad region 670 of the fourth reverse conducting insulated gate bipolar transistor 122, the sixth copper clad region 660 is provided corresponding to the third reverse conducting insulated gate bipolar transistor 121, and is in contact with the source of the third reverse conducting insulated gate bipolar transistor 121, the seventh copper clad region 670 is in contact with the midpoint terminal 220, and the eighth copper clad region 680 is in contact with the output terminal 240.

[0054] The drain of the fourth reverse conducting insulated gate bipolar transistor 122 is connected to the sixth copper clad area 660 through a binding wire, the drain of the third reverse conducting insulated gate bipolar transistor 121 is connected to the eighth copper clad area 680 through a binding wire, the cathode of the second diode 123 is connected to the seventh copper clad area 670 through a binding wire, and the anode of the second diode 123 is connected to the sixth copper clad area 660 through a binding wire.

[0055] It can be understood that the drain of the fourth reverse conducting insulated gate bipolar transistor 122 is connected to the sixth copper-clad region 660 through a bonding wire, so as to be connected to the source of the third reverse conducting insulated gate bipolar transistor 121 through the sixth copper-clad region 660, and the source of the fourth reverse conducting insulated gate bipolar transistor 122 is connected to the negative terminal 230 through the third copper-clad region 630. The drain of the third reverse conducting insulated gate bipolar transistor 121 is connected to the eighth copper-clad region 680 through a bonding wire, so as to be connected to the output terminal 240 through the eighth copper-clad region 680. The cathode of the second diode 123 is connected to the seventh copper-clad region 670 through a bonding wire, so as to be connected to the midpoint terminal 220 through the seventh copper-clad region 670, and the anode of the second diode 123 is connected to the sixth copper-clad region 660 through a bonding wire, so as to be connected to the source of the third reverse conducting insulated gate bipolar transistor 121 through the sixth copper-clad region 660.

[0056] In the above embodiments, the area of ​​each copper-clad region is set as large as possible to accelerate heat dissipation.

[0057] In one embodiment, the packaging structure takes the heat dissipation substrate 500 as a symmetry axis, and the upper bridge arm 110 and the lower bridge arm 120 are symmetrically arranged along the direction from the heat dissipation substrate 500 to the first copper clad substrate 300 .

[0058] In one embodiment, Figure 7 As shown, the package structure further includes a plurality of gate terminals 700, some of which are arranged on a side of the first copper-clad substrate 300 away from the heat dissipation substrate 500 and connected to the gate of the upper bridge arm 110, and the remaining gate terminals are arranged on a side of the second copper-clad substrate 400 away from the heat dissipation substrate 500 and connected to the gate of the lower bridge arm 120. Exemplarily, each reverse-conducting insulated gate bipolar transistor is respectively connected to two gate terminals 700 via bonding wires, and each gate terminal 700 is led out via a metal wire to receive a control signal from an external circuit.

[0059] In one embodiment, the package structure includes three full-bridge arms 100, and the metal terminal 200 further includes three output terminals 240. Each full-bridge arm 100 is respectively connected to a positive terminal 210, a negative terminal 230, and a midpoint terminal 220, and each full-bridge arm 100 is respectively connected to an output terminal 240 in a one-to-one correspondence. The circuit topology corresponding to the three full-bridge arms 100 is as follows: Figure 8 The appearance of the three full-bridge arms 100 after packaging is as shown in FIG. Fig. 9As shown, the three full-bridge arms 100 share a positive terminal 210, a negative terminal 230 and a midpoint terminal 220. Each full-bridge arm 100 is provided with an output terminal 240 separately. In addition, the first reverse-conducting insulated gate bipolar transistor 111 in each full-bridge arm 100 can share a gate terminal 700, the second reverse-conducting insulated gate bipolar transistor 112 in each full-bridge arm 100 can share a gate terminal 700, the third reverse-conducting insulated gate bipolar transistor 121 in each full-bridge arm 100 can share a gate terminal 700, and the fourth reverse-conducting insulated gate bipolar transistor 122 in each full-bridge arm 100 can share a gate terminal 700; optionally, a gate terminal 700 can also be provided separately for each reverse-conducting insulated gate bipolar transistor.

[0060] In one embodiment, Fig.10 As shown, the package structure further includes a first heat sink 810 and a second heat sink 820. The first heat sink 810 is located on a side of the upper bridge arm 110 away from the first copper-clad substrate 300, and the second heat sink 820 is located on a side of the lower bridge arm 120 away from the second copper-clad substrate 400.

[0061] In one embodiment, the present application further provides an electric drive system, which includes the packaging structure of the power module provided by any of the above embodiments.

[0062] In one embodiment, the present application also provides a vehicle, comprising an electric drive system as provided in any of the above embodiments.

[0063] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0064] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A packaging structure of a power module, characterized in that: include: At least one full-bridge arm, a plurality of metal terminals, and a first copper-clad substrate, a heat dissipation substrate, and a second copper-clad substrate stacked in sequence; wherein, The plurality of metal terminals include a positive terminal, a negative terminal, a midpoint terminal and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend from the first copper-clad substrate to the second copper-clad substrate respectively; The full-bridge arm includes an upper bridge arm and a lower bridge arm, the upper bridge arm is located on a side of the first copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the positive terminal, the midpoint terminal and the output terminal, and the lower bridge arm is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the negative terminal, the midpoint terminal and the output terminal.

2. The packaging structure of the power module according to claim 1, characterized in that: The upper bridge arm includes: a first reverse conducting insulated gate bipolar transistor, a second reverse conducting insulated gate bipolar crystal and a first diode; wherein the drain of the second reverse conducting insulated gate bipolar transistor is respectively connected to the source of the first reverse conducting insulated gate bipolar crystal, the cathode of the first diode and the output terminal, the drain of the first reverse conducting insulated gate bipolar crystal is connected to the positive terminal, and the anode of the first diode is connected to the midpoint terminal.

3. The packaging structure of the power module according to claim 2, characterized in that: A first copper-clad region, a second copper-clad region, a third copper-clad region and a fourth copper-clad region are further provided on a side of the first copper-clad substrate away from the heat dissipation substrate, wherein the first copper-clad region is provided corresponding to the first reverse-conducting insulated gate bipolar transistor and is respectively in contact with the drain of the first reverse-conducting insulated gate bipolar transistor, the positive terminal and the third copper-clad region, the second copper-clad region is provided corresponding to the second reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor, the third copper-clad region is in contact with the midpoint terminal, and the fourth copper-clad region is in contact with the output terminal; The source of the first reverse conducting insulated gate bipolar transistor is connected to the second copper clad area via a bonding wire, the source of the second reverse conducting insulated gate bipolar transistor is connected to the fourth copper clad area via a bonding wire, the cathode of the first diode is connected to the third copper clad area via a bonding wire, and the anode of the first diode is connected to the second copper clad area via a bonding wire.

4. The packaging structure of the power module according to claim 1, characterized in that: The lower bridge arm includes: a third reverse conducting insulated gate bipolar crystal, a fourth reverse conducting insulated gate bipolar crystal and a second diode; wherein the source of the third reverse conducting insulated gate bipolar crystal is respectively connected to the drain of the fourth reverse conducting insulated gate bipolar crystal, the anode of the second diode and the output terminal, the source of the fourth reverse conducting insulated gate bipolar crystal is connected to the negative terminal, and the cathode of the second diode is connected to the midpoint terminal.

5. The packaging structure of the power module according to claim 4, characterized in that: A fifth copper-clad region, a sixth copper-clad region, a seventh copper-clad region and an eighth copper-clad region are further provided on a side of the second copper-clad substrate away from the heat dissipation substrate, wherein the fifth copper-clad region is provided corresponding to the fourth reverse-conducting insulated gate bipolar transistor, and is in contact with the source of the fourth reverse-conducting insulated gate bipolar transistor, the negative terminal and the seventh copper-clad region, respectively; the sixth copper-clad region is provided corresponding to the third reverse-conducting insulated gate bipolar transistor, and is in contact with the source of the third reverse-conducting insulated gate bipolar transistor; the seventh copper-clad region is in contact with the midpoint terminal; and the eighth copper-clad region is in contact with the output terminal; The drain of the fourth reverse conducting insulated gate bipolar transistor is connected to the sixth copper clad region via a bonding wire, the drain of the third reverse conducting insulated gate bipolar transistor is connected to the eighth copper clad region via a bonding wire, the cathode of the second diode is connected to the seventh copper clad region via a bonding wire, and the anode of the second diode is connected to the sixth copper clad region via a bonding wire.

6. The packaging structure of the power module according to claim 1, characterized in that: The packaging structure takes the heat dissipation substrate as a symmetry axis, and the upper bridge arm and the lower bridge arm are symmetrically arranged along a direction from the heat dissipation substrate to the first copper-clad substrate.

7. The packaging structure of the power module according to claim 1, characterized in that: The packaging structure also includes: multiple gate terminals, some of the gate terminals are arranged on a side of the first copper-clad substrate away from the heat dissipation substrate and connected to the gate of the upper bridge arm, and the remaining gate terminals are arranged on a side of the second copper-clad substrate away from the heat dissipation substrate and connected to the gate of the lower bridge arm.

8. The packaging structure of the power module according to claim 1, characterized in that: The packaging structure includes three full-bridge arms, and the metal terminal also includes three output terminals; Wherein, each of the full-bridge arms is respectively connected to the positive terminal, the negative terminal and the midpoint terminal, and each of the full-bridge arms is respectively connected to one of the output terminals in a one-to-one correspondence.

9. The packaging structure of the power module according to claim 1, characterized in that: The packaging structure further includes: A first heat sink is located on a side of the upper bridge arm away from the first copper-clad substrate; The second heat sink is located on a side of the lower bridge arm away from the second copper-clad substrate.

10. An electric drive system, characterized in that: A packaging structure comprising a power module as described in any one of claims 1 to 9.

11. A vehicle, characterized in that: Comprising the electric drive system as claimed in claim 10.

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