Epitaxial structure of vertical cavity surface emitting laser and verification method thereof

Abstract

The invention provides an epitaxial structure of a vertical-cavity surface-emitting laser and a verification method thereof, and the verification method comprises the steps: carrying out the epitaxial verification of the epitaxial structure of the vertical-cavity surface-emitting laser employing an AlGaAs material with the mole fraction of Al greater than 60% as a GaAs substrate of a buffer layer, and carrying out the in-situ monitoring of the epitaxial growth of the AlGaAs buffer layer during the epitaxial verification. In addition, an AlGaAs buffer layer with the molar fraction of Al larger than 60% is grown on the GaAs substrate through the epitaxial technology, meanwhile, an AlGaAs material with the molar fraction of Al larger than 60% is deposited on the inner wall of an epitaxial technology cavity in the epitaxial technology process to serve as an inner wall protection layer, and therefore the number of times of pilot production is reduced, and epitaxial verification efficiency is improved. Therefore, defects caused by the fact that impurity particles in the epitaxial process chamber fall on the surface of an epitaxial growth film layer during epitaxial growth are reduced or even avoided, meanwhile, the furnace number for independently depositing an inner wall protection layer on the inner wall of the epitaxial process chamber can be removed, and the epitaxial verification efficiency is further improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor lasers, and in particular to an epitaxial structure of a vertical cavity surface emitting laser and a calibration method thereof. Background Art

[0002] The resonant cavity of the vertical cavity surface emitting laser (VCSEL) is formed by a Bragg reflector, which makes the laser emit along the material epitaxy direction, that is, perpendicular to the substrate direction. Due to its advantages such as high beam quality, single longitudinal mode lasing, low threshold current density, on-chip testing, and easy two-dimensional array integration, it is widely used in optical interconnection, optical communication, face recognition, and laser radar.

[0003] In order to improve the film quality of the epitaxial structure of the vertical cavity surface emitting laser, and then improve the yield of the epitaxial structure of the vertical cavity surface emitting laser, it is necessary to calibrate the epitaxial structure. After the epitaxial process chamber accessories of the vertical cavity surface emitting laser are replaced for maintenance that affects the growth results, the epitaxial process chamber is baked at high temperature, and then a material with strong adhesion is deposited on the inner wall of the epitaxial process chamber as an inner wall protective layer, so as to reduce or even avoid the impurity particles falling on the surface of the epitaxially grown film layer to form defects, thereby affecting the performance of the vertical cavity surface emitting laser. After the inner wall protective layer is deposited, the trial production of the vertical cavity surface emitting laser epitaxial structure is carried out, and the corresponding growth parameters are adjusted according to the trial growth results until the trial production results meet the preset requirements, and then the formal continuous production of the vertical cavity surface emitting laser epitaxial structure is carried out.

[0004] The conventional epitaxial structure of the vertical cavity surface emitting laser in the prior art includes, from bottom to top, a GaAs substrate, a GaAs buffer layer, an N-type AlGaAs Bragg reflector layer, an InGaAs quantum well active region layer, an AlGaAs oxidation restriction region layer and a P-type AlGaAs Bragg reflector layer. When this epitaxial structure is used for epitaxial verification, the GaAs buffer layer has no refractive index difference because it is made of the same material as the GaAs substrate, and therefore cannot obtain growth state changes in the first place through in-situ monitoring means, which affects the performance of the vertical cavity surface emitting laser epitaxial structure, thereby increasing the number of trial productions and affecting the efficiency of epitaxial verification. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an epitaxial structure of a vertical cavity surface emitting laser and a verification method thereof, so as to solve the problem that when performing epitaxial verification using a conventional epitaxial structure in the prior art, the performance of the epitaxial structure of the vertical cavity surface emitting laser is affected due to the need to deposit a protective layer on the inner wall of the epitaxial process chamber and the inability to perform in-situ monitoring of the epitaxially grown GaAs buffer layer, thereby increasing the number of trial productions and affecting the efficiency of epitaxial verification.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides an epitaxial structure of a vertical cavity surface emitting laser, wherein the epitaxial structure of the vertical cavity surface emitting laser comprises, from bottom to top, a GaAs substrate, an AlGaAs buffer layer, an N-type AlGaAs Bragg reflector layer, an InGaAs quantum well active region layer, an AlGaAs oxidation restriction layer and a P-type AlGaAs Bragg reflector layer, wherein the material component of the AlGaAs buffer layer is Al x Ga (1-x) As, 0.6 <x<1。

[0007] Optionally, the epitaxial structure of the vertical cavity surface emitting laser further includes a GaAs ohmic contact layer located above the P-type AlGaAs Bragg reflector layer.

[0008] Optionally, the AlGaAs buffer layer has a thickness of 100 nm to 1000 nm.

[0009] Optionally, the number of quantum wells in the InGaAs quantum well active region layer is 3 to 6, and the N-type AlGaAs Bragg reflector layer has 42 pairs of Bragg reflectors.

[0010] The present invention also provides a method for verifying a vertical cavity surface emitting laser epitaxial structure, using the vertical cavity surface emitting laser epitaxial structure as described in any one of the above items to perform epitaxial verification, the verification method comprising the following steps:

[0011] S1, conducting trial production of the vertical cavity surface emitting laser epitaxial structure, firstly using an epitaxial process to grow the AlGaAs buffer layer on the GaAs substrate, and simultaneously depositing an AlGaAs material forming the AlGaAs buffer layer on the inner wall of the epitaxial process chamber as an inner wall protection layer during the epitaxial process, and monitoring the trial growth parameters of the AlGaAs buffer layer;

[0012] S2, continuing the trial production to continue epitaxially growing the remaining film layers of the vertical cavity surface emitting laser epitaxial structure on the AlGaAs buffer layer, and monitoring the trial growth parameters of the remaining film layers;

[0013] S3, judging whether the trial production result meets the preset requirements; if the preset requirements are not met, adjusting the trial production parameters accordingly according to the trial production result, and continuing steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements;

[0014] S4. If the trial production results meet the preset requirements, the formal continuous production of the vertical cavity surface emitting laser epitaxial structure is carried out.

[0015] Optionally, before the trial production of the vertical cavity surface emitting laser epitaxial structure is carried out, the method further includes the steps of performing equipment maintenance on the epitaxial process chamber and baking the epitaxial process chamber.

[0016] Optionally, the method for monitoring the growth state of the AlGaAs buffer layer is in-situ monitoring using EpiTT technology.

[0017] Optionally, the test growth parameters include film thickness, growth rate, molar component stoichiometry and surface morphology.

[0018] Optionally, when performing the formal continuous production of the VCSEL epitaxial structure, it further includes judging whether the formal continuous production result meets the preset requirement, and if it does not meet the preset requirement, performing steps S1 to S4 again.

[0019] Optionally, the trial production is carried out 1 to 2 times.

[0020] As described above, the epitaxial structure of the vertical cavity surface emitting laser and the verification method thereof of the present invention have the following beneficial effects: the verification method performs epitaxial verification on the epitaxial structure of the vertical cavity surface emitting laser using AlGaAs with a molar fraction of Al greater than 60% as a buffer layer, so that the AlGaAs buffer layer is different from the GaAs substrate material. Therefore, when performing epitaxial verification, the epitaxial growth of the AlGaAs buffer layer can be monitored in situ, so that the test growth parameters can be adjusted in time during the epitaxial process, thereby reducing the number of trial productions and improving the epitaxial verification efficiency. In addition, by An AlGaAs buffer layer with a molar fraction of Al greater than 60% is grown on a GaAs substrate by an epitaxial process, and an AlGaAs material with a molar fraction of Al greater than 60% is deposited on the inner wall of an epitaxial process chamber during the epitaxial process as an inner wall protective layer, thereby reducing or even avoiding impurity particles in the epitaxial process chamber falling on the surface of the epitaxially grown film layer during epitaxial growth to form defects, thereby affecting the performance of the vertical cavity surface emitting laser epitaxial structure, and at the same time, the number of furnaces for depositing the inner wall protective layer on the inner wall of the epitaxial process chamber alone can be removed, thereby further improving the epitaxial verification efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic cross-sectional structure diagram of the vertical cavity surface emitting laser epitaxial structure of the present invention.

[0022] Figure 2 It is a schematic flow chart of a method for verifying a vertical cavity surface emitting laser epitaxial structure according to the present invention.

[0023] Component number description

[0024] 10 GaAs substrate

[0025] 11 AlGaAs buffer layer

[0026] 12 N-type AlGaAs Bragg reflector layer

[0027] 13 InGaAs quantum well active region layer

[0028] 14 AlGaAs oxide confinement layer

[0029] 15 P-type AlGaAs Bragg reflector layer

[0030] 16 GaAs Ohmic Contact Layer

[0031] Steps S1 to S4 DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] See also Figure 1 to Figure 2 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0034] This embodiment provides an epitaxial structure of a vertical cavity surface emitting laser, such as Figure 1 As shown, the epitaxial structure of the vertical cavity surface emitting laser includes, from bottom to top, a GaAs substrate 10, an AlGaAs buffer layer 11, an N-type AlGaAs Bragg reflector layer 12, an InGaAs quantum well active region layer 13, an AlGaAs oxidation restriction layer 14 and a P-type AlGaAs Bragg reflector layer 15, wherein the material composition of the AlGaAs buffer layer 11 is Alx Ga (1-x) As, where 0.6 < x < 1.

[0035] In the epitaxial structure of the vertical cavity surface emitting laser in this embodiment, by using AlGaAs as the buffer layer, which is different from the GaAs substrate material, in-situ monitoring can be carried out during the epitaxial growth of the AlGaAs buffer layer to obtain a high-quality buffer layer film, thereby improving the performance of the epitaxial structure of the vertical cavity surface emitting laser. In addition, the epitaxial structure of the vertical cavity surface emitting laser in this embodiment can be used for epitaxial verification. During the epitaxial verification, in-situ monitoring can be carried out on the epitaxial growth of the AlGaAs buffer layer, so that the trial growth parameters can be adjusted in time during the epitaxial process, thereby reducing the number of trial productions and improving the verification efficiency. And by growing an AlGaAs buffer layer with a molar fraction of Al greater than 60% on the GaAs substrate by an epitaxial process, and at the same time depositing an AlGaAs material with a molar fraction of Al greater than 60% on the inner wall of the epitaxial process chamber as an inner wall protection layer during this epitaxial process, to reduce or even avoid the impurity particles inside the epitaxial process chamber from falling on the surface of the epitaxial growth film layer to form defects during epitaxial growth, thereby affecting the performance of the epitaxial structure of the vertical cavity surface emitting laser. At the same time, the furnace batch for separately depositing the inner wall protection layer on the inner wall of the epitaxial process chamber can also be eliminated, further improving the verification efficiency.

[0036] It should be noted that the material composition of the AlGaAs buffer layer 11 is Al x Ga (1-x) As, where 0.6 < x < 1, that is, in the AlGaAs buffer layer 11, the molar fraction of Al is x, and the molar fraction of Ga is 1 - x. Here, it can be expressed that the molar fraction of Al in the AlGaAs buffer layer 11 is greater than 60%.

[0037] As an example, the epitaxial structure of the vertical cavity surface emitting laser further includes a GaAs ohmic contact layer 16 located above the P-type AlGaAs Bragg reflector layer 15. The thickness of the GaAs ohmic contact layer 16 can be 50 nm to 2000 nm. The GaAs ohmic contact layer 16 can form the top electrode of the epitaxial structure of the vertical cavity surface emitting laser, so as to drive the vertical cavity surface emitting laser to work. The GaAs ohmic contact layer 16 not only helps to improve the electrical injection efficiency of the vertical cavity surface emitting laser, but also can reduce the contact resistance, thereby reducing the power loss.

[0038] The thickness of the AlGaAs buffer layer 11 can be adjusted according to the performance specification requirements of the target device. As an example, the thickness of the AlGaAs buffer layer 11 can be set to 100nm to 1000nm to reduce the stress caused by the lattice constant mismatch between the GaAs substrate 10 and the N-type AlGaAs Bragg reflector layer 12 materials. The AlGaAs buffer layer provides a smooth starting surface, which is conducive to the uniform growth of the subsequent epitaxial layer and maintains the film quality of the N-type AlGaAs Bragg reflector layer 12 epitaxial layer.

[0039] The number of pairs, material composition and emission wavelength of the N-type AlGaAs Bragg reflector layer 12 and the P-type AlGaAs Bragg reflector layer 15 can be adjusted according to the performance specification requirements of the target device. As a specific example, the N-type AlGaAs Bragg reflector layer 12 is 42 pairs of material composition Al 0.9 Ga 0.1 As or Al 0.06 Ga 0.94 As N-type AlGaAs Bragg reflector, the Bragg center wavelength is 940nm; the P-type AlGaAs Bragg reflector layer 15 is 20 pairs of material components: Al 0.9 Ga 0.1 As or Al 0.06 Ga 0.94 As P-type AlGaAs Bragg reflector, the Bragg center wavelength is 940nm.

[0040] The material composition of the AlGaAs oxidation restriction layer 14 can also be adjusted according to the performance specification requirements of the target device. As a specific example, the material composition of the AlGaAs oxidation restriction layer 14 is Al 0.98 Ga 0.02 As.

[0041] As an example, the InGaAs quantum well active region layer 13 includes 3 to 6 InGaAs quantum wells, and the room temperature luminescence wavelength of the InGaAs quantum wells is 920 nm.

[0042] An AlGaAs material with an Al mole fraction greater than 60% is deposited on the inner wall of an epitaxial process chamber as an inner wall protective layer. The AlGaAs material with a higher Al mole fraction has a stronger adhesion ability to the impurity particles in the epitaxial process chamber and can be deposited on the inner wall of the epitaxial process chamber, thereby reducing or even avoiding the impurity particles falling on the surface of the epitaxially grown film layer to form defects, thereby affecting the performance of the vertical cavity surface emitting laser epitaxial structure.

[0043] As described in the background technology, the existing method for verifying the epitaxial structure of the vertical cavity surface emitting laser needs to deposit an inner wall protective layer on the inner wall of the epitaxial process chamber before conducting trial production, that is, before epitaxially growing the GaAs buffer layer on the GaAs substrate, so as to reduce or even avoid the impurity particles falling on the surface of the epitaxially grown film layer to form defects. In addition, since the GaAs buffer layer is made of the same material as the GaAs substrate and has no refractive index difference, it is impossible to obtain the growth state change in the first time through in-situ monitoring means, which in turn affects the performance of the vertical cavity surface emitting laser epitaxial structure, increases the number of trial productions, and affects the efficiency of epitaxial verification.

[0044] In this embodiment, one epitaxial growth is referred to as a furnace, and all furnaces for the entire epitaxial verification process, that is, all furnaces for depositing the inner wall protective layer, conducting trial production, and conducting formal continuous production are referred to as a furnace period. Taking the entire furnace period as an example, there are 20 furnaces, wherein at least one furnace is required to deposit the inner wall protective layer. Since the GaAs buffer layer is made of the same material as the GaAs substrate and has no refractive index difference, it is impossible to obtain the growth state change in the first time through in-situ monitoring means, and the trial production requires at least 2 to 3 furnaces. Therefore, at least 3 to 4 furnaces are required before the formal continuous production, which accounts for at least 15% to 20% of the entire furnace period, affecting the epitaxial verification efficiency.

[0045] Based on this, this embodiment also provides a method for verifying a vertical cavity surface emitting laser epitaxial structure, such as Figure 1 and Figure 2 As shown, the epitaxial structure of the vertical cavity surface emitting laser as described in any one of the above items is used to perform epitaxial verification, and the verification method is as follows Figure 2 As shown, the following steps are included:

[0046] S1, conducting trial production of the vertical cavity surface emitting laser epitaxial structure, firstly using an epitaxial process to grow the AlGaAs buffer layer 11 on the GaAs substrate 10, and simultaneously depositing an AlGaAs material to form the AlGaAs buffer layer 11 on the inner wall of an epitaxial process chamber as an inner wall protective layer during the epitaxial process, and monitoring the trial growth parameters of the AlGaAs buffer layer 11;

[0047] S2, continuing the trial production to continue epitaxially growing the remaining film layers of the vertical cavity surface emitting laser epitaxial structure on the AlGaAs buffer layer 11, and monitoring the trial growth parameters of the remaining film layers;

[0048] S3, judging whether the trial production result meets the preset requirements; if the preset requirements are not met, adjusting the trial production parameters accordingly according to the trial production result, and continuing steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements;

[0049] S4. If the trial production results meet the preset requirements, the formal continuous production of the vertical cavity surface emitting laser epitaxial structure is carried out.

[0050] The verification method of the vertical cavity surface emitting laser epitaxial structure of the present embodiment adopts the vertical cavity surface emitting laser epitaxial structure with AlGaAs as the buffer layer as the verification structure, so that the AlGaAs buffer layer is different from the GaAs substrate material. Therefore, when performing epitaxial verification, the epitaxial growth of the AlGaAs buffer layer can be monitored in situ, thereby reducing the number of trial productions and improving the verification efficiency. In addition, an AlGaAs buffer layer with a molar fraction of Al greater than 60% is grown on the GaAs substrate by an epitaxial process on the GaAs substrate, and an AlGaAs material with a molar fraction of Al greater than 60% is deposited on the inner wall of the epitaxial process chamber during the epitaxial process as an inner wall protective layer, thereby reducing or even avoiding the impurity particles in the epitaxial process chamber during epitaxial growth falling on the surface of the epitaxially grown film layer to form defects, thereby affecting the performance of the vertical cavity surface emitting laser epitaxial structure. At the same time, the furnace for depositing the inner wall protective layer on the inner wall of the epitaxial process chamber alone can be removed, thereby further improving the efficiency of epitaxial verification.

[0051] As an example, during epitaxial verification, before conducting the trial production of the vertical cavity surface emitting laser epitaxial structure, it also includes the steps of replacing the epitaxial process chamber accessories and other maintenance of the vertical cavity surface emitting laser epitaxial equipment according to the growth results, and baking the epitaxial process chamber to remove moisture and other volatile substances in the epitaxial process chamber, thereby reducing or even avoiding film defects caused during the epitaxial growth process, thereby affecting the performance of the vertical cavity surface emitting laser epitaxial structure, and at the same time reducing or even avoiding oxidation or corrosion of accessories in the epitaxial process chamber.

[0052] It should be noted that the remaining film layers in step S2 include, from bottom to top, the N-type AlGaAs Bragg reflector layer 12 , the InGaAs quantum well active region layer 13 , the AlGaAs oxidation restriction layer 14 and the P-type AlGaAs Bragg reflector layer 15 .

[0053] The verification method requires monitoring of the test growth parameters of the AlGaAs buffer layer 11 and the remaining film layers. As an example, the test growth parameters include film thickness, growth rate, molar component measurement and surface morphology. Preferably, the method for monitoring the growth state of the AlGaAs buffer layer 11 in this embodiment is in-situ monitoring using EpiTT technology. The in-situ monitoring using EpiTT technology can monitor and control the test growth parameters in real time, thereby ensuring the stability of the epitaxial growth process and the stability of the performance of the vertical cavity surface emitting laser epitaxial structure.

[0054] In step S3, it is necessary to determine whether the trial production results reach the preset results. The preset results can be formulated according to the specifications of the target vertical cavity surface emitting laser. As an example, the preset results include output optical power, threshold current, reflection spectrum wavelength, quantum well wavelength, spectrum width and / or working reliability test, etc.

[0055] As an example, when the formal continuous production of the vertical cavity surface emitting laser epitaxial structure is carried out, it also includes judging whether the formal continuous production result meets the preset requirements, and if the preset requirements are not met, re-performing steps S1 to S4, that is, re-performing the epitaxial verification step. As an example, the formal continuous production result includes output optical power, threshold current, reflection spectrum wavelength, quantum well wavelength, spectrum width and / or working reliability test, etc.

[0056] Similarly, taking the entire furnace period of 20 furnaces as an example, wherein the AlGaAs buffer layer 11 is epitaxially grown on the GaAs substrate 10, and during the epitaxial process, the AlGaAs material to form the AlGaAs buffer layer 11 is deposited on the inner wall of the epitaxial process chamber as an inner wall protective layer for one furnace, in this embodiment, since the test growth parameters of the AlGaAs buffer layer 11 can be monitored, the number of test growths is reduced, and the trial production can be illustratively reduced to 1 to 2 furnaces, that is, there are 1 to 2 furnaces before the formal continuous production, which accounts for 5% to 10% of the entire furnace period. Compared with the prior art, the efficiency of epitaxial verification is improved.

[0057] In summary, the present invention provides an epitaxial structure of a vertical cavity surface emitting laser and a verification method thereof. The verification method performs epitaxial verification on an epitaxial structure of a vertical cavity surface emitting laser using AlGaAs with a molar fraction of Al greater than 60% as a buffer layer, so that the AlGaAs buffer layer is different from the GaAs substrate material. Therefore, when performing epitaxial verification, the epitaxial growth of the AlGaAs buffer layer can be monitored in situ, so that the test growth parameters can be adjusted in time during the epitaxial process, thereby reducing the number of trial productions and improving the epitaxial verification efficiency. In addition, an AlGaAs buffer layer with a molar fraction of Al greater than 60% is grown on a GaAs substrate using an epitaxial process, and an AlGaAs material with a molar fraction of Al greater than 60% is deposited on the inner wall of an epitaxial process chamber during the epitaxial process as an inner wall protective layer, thereby reducing or even avoiding impurity particles in the epitaxial process chamber during epitaxial growth falling on the surface of the epitaxially grown film layer to form defects, thereby affecting the performance of the epitaxial structure of the vertical cavity surface emitting laser. At the same time, the number of furnaces for depositing the inner wall protective layer on the inner wall of the epitaxial process chamber alone can be removed, further improving the epitaxial verification efficiency. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0058] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An epitaxial structure of a vertical cavity surface emitting laser, characterized in that: The epitaxial structure of the vertical cavity surface emitting laser includes, from bottom to top, a GaAs substrate, an AlGaAs buffer layer, an N-type AlGaAs Bragg reflector layer, an InGaAs quantum well active region layer, an AlGaAs oxidation restriction layer, and a P-type AlGaAs Bragg reflector layer, wherein the material component of the AlGaAs buffer layer is Al x Ga (1-x) As, 0.6 <x<1。 2. The epitaxial structure of a vertical cavity surface emitting laser according to claim 1, characterized in that: The epitaxial structure of the vertical cavity surface emitting laser further includes a GaAs ohmic contact layer located above the P-type AlGaAs Bragg reflector layer.

3. The epitaxial structure of a vertical cavity surface emitting laser according to claim 1, characterized in that: The thickness of the AlGaAs buffer layer is 100nm-1000nm.

4. The epitaxial structure of a vertical cavity surface emitting laser according to claim 1, characterized in that: The number of quantum wells in the InGaAs quantum well active region layer is 3 to 6, and the N-type AlGaAs Bragg reflector layer has 42 pairs of Bragg reflectors.

5. A method for verifying a vertical cavity surface emitting laser epitaxial structure, characterized in that: The epitaxial structure of the vertical cavity surface emitting laser according to any one of claims 1 to 4 is used to perform epitaxial verification, and the verification method comprises the following steps: S1, conducting trial production of the vertical cavity surface emitting laser epitaxial structure, firstly using an epitaxial process to grow the AlGaAs buffer layer on the GaAs substrate, and simultaneously depositing an AlGaAs material forming the AlGaAs buffer layer on the inner wall of the epitaxial process chamber as an inner wall protection layer during the epitaxial process, and monitoring the trial growth parameters of the AlGaAs buffer layer; S2, continuing the trial production to continue epitaxially growing the remaining film layers of the vertical cavity surface emitting laser epitaxial structure on the AlGaAs buffer layer, and monitoring the trial growth parameters of the remaining film layers; S3, judging whether the trial production result meets the preset requirements; if the preset requirements are not met, adjusting the trial production parameters accordingly according to the trial production result, and continuing steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements; S4. If the trial production results meet the preset requirements, the formal continuous production of the vertical cavity surface emitting laser epitaxial structure is carried out.

6. The method for verifying a vertical cavity surface emitting laser epitaxial structure according to claim 5, characterized in that: Before the trial production of the vertical cavity surface emitting laser epitaxial structure is carried out, the method further includes the steps of performing equipment maintenance on the epitaxial process chamber and baking the epitaxial process chamber.

7. The method for verifying a vertical cavity surface emitting laser epitaxial structure according to claim 5, characterized in that: The method for monitoring the growth state of the AlGaAs buffer layer is in-situ monitoring using the EpiTT technology.

8. The method for verifying a vertical cavity surface emitting laser epitaxial structure according to claim 5, characterized in that: The test growth parameters include film thickness, growth rate, molar component stoichiometry and surface morphology.

9. The method for verifying a vertical cavity surface emitting laser epitaxial structure according to claim 5, characterized in that: When the formal continuous production of the VCSEL epitaxial structure is carried out, it also includes judging whether the formal continuous production result meets the preset requirement. If the preset requirement is not met, steps S1 to S4 are repeated.

10. The method for verifying a vertical cavity surface emitting laser epitaxial structure according to claim 5, characterized in that: The number of times of the trial production is 1 to 2 times.

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