Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel, a preparation method thereof and a display device. The display panel comprises a substrate; the pixel definition layer is located on one side of the substrate, and a plurality of pixel openings are defined by the pixel definition layer; the light-emitting device layer comprises a plurality of light-emitting units emitting single-color light, and at least parts of the light-emitting units are located in the pixel openings; the multiple isolation structures are located on the side, away from the substrate, of the pixel definition layer, and the adjacent light-emitting units are separated by the isolation structures; the light conversion layer is located on the side, away from the substrate, of the light-emitting unit. According to the technical scheme, the adjacent light-emitting units are separated through the isolation structures, pixel crosstalk can be reduced, and preparation of high-PPI display products is facilitated; in addition, the light-emitting unit is combined with the light conversion layer to improve color purity and display effect.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for preparing the same, and a display device. Background Art

[0002] In the display field, an organic light emitting diode (OLED) device is a device that uses a multi-layer organic thin film structure to generate electroluminescence and has the advantages of light weight, high brightness, low power consumption, fast response, and a wide viewing angle.

[0003] With the widespread application of OLED devices, higher requirements are placed on the display pixel density (Pixels Per Inch, PPI) of OLED devices. However, there are still some problems in the preparation of high PPI OLED devices. Summary of the invention

[0004] In order to solve the above problems, embodiments of the present application provide a display panel and a method for manufacturing the same, and a display device.

[0005] In a first aspect, an embodiment of the present application provides a display panel, comprising: a substrate; a pixel definition layer, located on one side of the substrate, the pixel definition layer is arranged to form a plurality of pixel openings; a light-emitting device layer, the light-emitting device layer comprising a plurality of light-emitting units emitting a single color of light, at least part of the light-emitting units being located within the pixel openings; an isolation structure, located on a side of the pixel definition layer away from the substrate, the isolation structure separating adjacent light-emitting units; and a light conversion layer, located on a side of the light-emitting unit away from the substrate.

[0006] In combination with the first aspect, the isolation structure includes at least one isolation column, and the orthographic projection of the isolation column on the substrate surrounds the orthographic projection of the pixel opening on the substrate; preferably, the isolation column includes a first part and a second part stacked in sequence along a direction away from the substrate, and the orthographic projection of the first part on the substrate is located within the orthographic projection of the second part on the substrate; preferably, the material of the first part and the material of the second part are different; preferably, the material of the first part includes at least one of organic material, inorganic material or metal material; preferably, the material of the first part includes black organic material; preferably, the material of the second part includes at least one of organic material, inorganic material or metal material; preferably, a part of the light-emitting device layer is located on a part of the surface of the second part away from the substrate, and is arranged close to the pixel opening; preferably, the projection width of the light-emitting device layer located on the side of the second part away from the substrate on the substrate is greater than or equal to 0.5um and less than or equal to 5um, preferably greater than or equal to 1um and less than or equal to 2um; preferably, the light-emitting unit is in contact with the first part.

[0007] In combination with the first aspect, the light-emitting unit includes: a first electrode, the first electrode is located between the substrate and the pixel definition layer, and the pixel opening exposes part of the first electrode; a light-emitting functional unit, the light-emitting functional unit is located on the side of the first electrode away from the substrate, and the light-emitting functional unit at least partially covers the exposed first electrode; a second electrode, the second electrode is located on the side of the light-emitting functional unit away from the substrate, and the second electrode covers the light-emitting functional unit; preferably, the display panel also includes a first protective layer, the first protective layer is located on the side of the light-emitting unit away from the substrate, and at least covers the light-emitting unit; preferably, the material of the first protective layer includes at least one of silicon oxide, silicon nitride or silicon oxynitride.

[0008] In combination with the first aspect, the light conversion layer includes a plurality of quantum dot units and a first retaining wall structure, the orthographic projection of the quantum dot unit on the substrate at least partially overlaps with the orthographic projection of the light emitting unit on the substrate, a first retaining wall structure is arranged between adjacent quantum dot units, and / or adjacent quantum dot units are separated by an isolation structure; preferably, the light emitting unit includes a blue light emitting unit, and the quantum dot unit includes at least a red quantum dot unit and a green quantum dot unit; preferably, the light emitting unit includes a white light emitting unit or an ultraviolet light emitting unit, and the quantum dot unit includes a red quantum dot unit, a green quantum dot unit and a blue quantum dot unit; preferably, the display panel also includes an encapsulation layer, and the encapsulation layer is located on the side of the light conversion layer away from the substrate; preferably, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer and a first encapsulation layer stacked in sequence in a direction away from the substrate. Two inorganic encapsulation layers; preferably, the display panel also includes a second protective layer, and the second protective layer is located between the light conversion layer and the light-emitting unit; preferably, the material of the second protective layer includes at least one of silicon oxide, silicon nitride or silicon oxynitride; preferably, the isolation structure includes at least two isolation columns, and a first retaining wall structure is arranged in the area between adjacent isolation columns; preferably, the display panel also includes a color filter layer located on the side of the encapsulation layer away from the substrate, the color filter layer includes a plurality of color resist units and a second retaining wall structure arranged between adjacent color resist units, and the orthographic projections of the plurality of color resist units on the substrate at least partially overlap with the orthographic projections of the light-emitting unit on the substrate; preferably, the color resist units include a red color resist unit, a green color resist unit and a blue color resist unit; preferably, the display panel also includes a cover plate located on the side of the color filter layer away from the substrate.

[0009] In combination with the first aspect, it also includes an encapsulation layer, which is located between the light-emitting device layer and the light conversion layer; preferably, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked in sequence in a direction away from the substrate; preferably, the isolation structure includes at least two isolation columns, and the material of the encapsulation layer is filled between adjacent isolation columns; preferably, the light conversion layer includes a plurality of quantum dot units and a first retaining wall structure, the orthographic projection of the quantum dot unit on the substrate overlaps with the orthographic projection of the light-emitting unit on the substrate at least partially, and the first retaining wall structure is arranged between adjacent quantum dot units; preferably, the display panel also includes a color filter layer located on the side of the light conversion layer away from the substrate, the color filter layer includes a plurality of color resist units and a second retaining wall structure arranged between adjacent color resist units, the orthographic projection of the plurality of color resist units on the substrate overlaps with the orthographic projection of the light-emitting unit on the substrate at least partially; preferably, the color resist unit includes a red color resist unit, a green color resist unit, and a blue color resist unit; preferably, the display panel also includes a third protective layer located between the light conversion layer and the color filter layer; preferably, the material of the third protective layer includes a resin material; preferably, the display panel also includes a cover plate located on the side of the color filter layer away from the substrate.

[0010] In a second aspect, an embodiment of the present application provides a method for preparing a display panel, comprising: forming a first electrode layer on one side of a substrate, the first electrode layer comprising a plurality of first electrodes arranged at intervals; forming a pixel definition layer on a side of the first electrode layer away from the substrate, the pixel definition layer surrounding a plurality of pixel openings, the pixel openings exposing portions of the first electrodes; forming a plurality of isolation structures on a side of the pixel definition layer away from the substrate; forming a light-emitting functional layer and a second electrode layer in sequence on a side of the pixel definition layer away from the substrate, the first electrode layer, the light-emitting functional layer and the second electrode layer constituting a light-emitting device layer, the light-emitting device layer comprising a plurality of light-emitting units emitting a single color of light, at least a portion of the light-emitting units being located within the pixel openings, and the isolation structures separating adjacent light-emitting units; forming a light conversion layer on a side of the light-emitting units away from the substrate.

[0011] In combination with the second aspect, the isolation structure includes at least one isolation column, and a plurality of isolation structures are formed on the side of the pixel definition layer away from the substrate, including: forming a first film layer material and a second film layer material in sequence on the side of the pixel definition layer away from the substrate; patterning the first film layer material and the second film layer material to form a first part and a second part to obtain an isolation column, wherein the orthographic projection of the first part on the substrate is located within the orthographic projection of the second part on the substrate; preferably, the patterning includes at least one of dry etching and wet etching; preferably, forming a light-emitting functional layer and a second electrode layer in sequence on the side of the pixel definition layer away from the substrate, including: sequentially vapor-depositing a light-emitting functional material layer and a second electrode material layer on the side of the pixel definition layer and / or the isolation structure away from the substrate; removing at least a portion of the light-emitting functional material layer located on the side of the isolation column away from the substrate through a photolithography process. Functional material layer and second electrode material layer are formed to obtain light-emitting functional layer and second electrode layer; preferably, the isolation structure comprises at least two isolation columns, and the light-emitting functional layer and second electrode layer are sequentially formed on the side of the pixel definition layer away from the substrate, and further comprises: removing the light-emitting functional material layer and second electrode material layer between two adjacent isolation columns by photolithography process; preferably, after the step of forming the light-emitting functional material layer and second electrode material layer on the side of the pixel definition layer and / or the isolation structure away from the substrate, the method further comprises: forming a first protective material layer on the side of the second electrode material layer away from the substrate; removing at least part of the light-emitting functional material layer, second electrode material layer and first protective material layer located on the side of the isolation structure away from the substrate and / or between two adjacent isolation columns by photolithography process to obtain the light-emitting functional layer, second electrode layer and first protective layer.

[0012] In combination with the second aspect, before the step of forming a light conversion layer on the side of the light-emitting device layer facing away from the substrate, the method also includes: forming a second protective layer on the side of the light-emitting unit facing away from the substrate; preferably, the method also includes: forming an encapsulation layer on the side of the light conversion layer facing away from the substrate; forming a color filter layer on the side of the encapsulation layer facing away from the substrate; and forming a cover plate on the side of the color filter layer facing away from the substrate.

[0013] In combination with the second aspect, before the step of forming a light conversion layer on the side of the light-emitting unit facing away from the substrate, the method also includes: forming an encapsulation layer on the side of the light-emitting unit layer facing away from the substrate; preferably, the method also includes: forming a third protective layer on the side of the light conversion layer facing away from the substrate; forming a color filter layer on the side of the third protective layer facing away from the substrate; and forming a cover plate on the side of the color filter layer facing away from the substrate.

[0014] In a third aspect, an embodiment of the present application provides a display device, comprising the above-mentioned display panel, or comprising a display panel prepared by the above-mentioned method.

[0015] Through the above technical solution, by setting up an isolation structure to disconnect adjacent light-emitting units, lateral leakage can be avoided, thereby reducing crosstalk between light-emitting units, which is conducive to the preparation of high PPI products. In addition, the light-emitting unit combined with the light conversion layer can improve color purity and further enhance the display effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the cross-sectional structure of a display panel provided in one embodiment of the present application.

[0017] Figure 2 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0018] Figure 3 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0019] Figure 4 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0020] Figure 5 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0021] Figure 6 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0022] Figure 7 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0023] Figure 8 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application.

[0024] Fig. 9 It is a schematic diagram of a process of manufacturing a display panel provided in one embodiment of the present application.

[0025] Figures 10a-10i It is a structural schematic diagram of a method for preparing a display panel provided in one embodiment of the present application.

[0026] Fig.11 It is a schematic diagram of the structure of a display device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] In existing solutions, fine metal mask (FMM) technology is usually used to prepare light-emitting devices. However, the mold opening cost of FMM is high, and the aperture ratio of the light-emitting device is low. There is crosstalk between adjacent light-emitting units, so it is difficult to prepare high PPI display products.

[0029] In the face of the above technical problems, on the first aspect, an embodiment of the present application provides a display panel that can reduce the crosstalk between adjacent light-emitting units and improve the display PPI. The display panel includes: a substrate; a pixel definition layer, located on one side of the substrate, the pixel definition layer is surrounded to form a plurality of pixel openings; a light-emitting device layer, the light-emitting device layer includes a plurality of light-emitting units that emit a single color of light, at least part of the light-emitting unit is located in the pixel opening; a plurality of isolation structures, located on the side of the pixel definition layer away from the substrate, the isolation structure separates the adjacent light-emitting units; a light conversion layer, located on the side of the light-emitting unit away from the substrate. In an embodiment of the present application, by setting an isolation structure to disconnect adjacent light-emitting units, lateral leakage can be avoided, thereby reducing crosstalk between light-emitting units, which is conducive to the preparation of high PPI products. In addition, the light-emitting unit combined with the light conversion layer can improve color purity and further enhance the display effect.

[0030] Figure 1 is a schematic diagram of a cross-sectional structure of a display panel provided by an embodiment of the present application. Figure 1 As shown, the display panel includes a substrate 10 , a pixel definition layer 20 , a light emitting device layer 30 , a plurality of isolation structures and a light conversion layer 50 .

[0031] In an embodiment of the present application, the substrate 10 includes a rigid substrate, such as a glass substrate; or, the substrate 10 includes a flexible substrate, such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), etc.

[0032] The pixel definition layer 20 is located on one side of the substrate 10, and the pixel definition layer 20 is surrounded by a plurality of pixel openings 201. In the embodiment of the present application, the pixel definition layer 20 includes an organic material or an inorganic material, which is not limited in the present application. Figure 1 Only three pixel openings 201 are shown in the figure. It can be understood that the display panel of the present application includes multiple pixel openings 201.

[0033] The light-emitting device layer 30 includes a plurality of light-emitting units 310 that emit a single color of light. At least a portion of the light-emitting units 310 is located in the pixel opening 201, and adjacent light-emitting units 310 are separated by an isolation structure. The light-emitting unit 310 includes a first electrode 311, a light-emitting function unit 312, and a second electrode 313. The first electrode 311 is located between the substrate 10 and the pixel definition layer 20, and the pixel opening 201 exposes a portion of the first electrode 311. The light-emitting function unit 312 is located on the side of the first electrode 311 away from the substrate 10, and at least a portion of the light-emitting function unit 312 covers the exposed first electrode 311. The second electrode 313 is located on the side of the light-emitting function unit 312 away from the substrate 10, and the second electrode 313 covers the light-emitting function unit 312. In the embodiment of the present application, the first electrode 311 is an anode, and the second electrode 313 is a cathode; or, the first electrode 311 is a cathode, and the second electrode 313 is an anode. The light-emitting functional unit 312 includes a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer stacked in sequence.

[0034] The isolation structure is located on the side of the pixel definition layer away from the substrate 10, and the isolation structure separates adjacent light-emitting units 310. The isolation structure includes at least one isolation column 40 ( Figure 1 In the embodiment, each isolation structure includes only one isolation column 40, and the orthographic projection of the isolation column 40 on the substrate 10 surrounds the orthographic projection of the pixel opening 201 on the substrate 10. Figure 1 As shown, the isolation column 40 includes a first part 401 and a second part 402 stacked in sequence in a direction away from the substrate 10, and the orthographic projection of the first part 401 on the substrate 10 is located within the orthographic projection of the second part 402 on the substrate 10, that is, the isolation column 40 forms an undercut structure. In this way, when the light-emitting functional layer 32 and the second electrode layer 33 are evaporated, a plurality of light-emitting functional units and second electrodes that are disconnected can be obtained. In the embodiment of the present application, the material of the first part 401 is different from the material of the second part 402, so as to form an isolation column 40 with an undercut structure. Optionally, the material of the first part 401 includes at least one of an organic material, an inorganic material, and a metal material. The material of the second part 402 includes at least one of an organic material, an inorganic material or a metal material. Preferably, the material of the first part 401 includes a black organic material to block light from other light-emitting units and reduce light crosstalk. Optionally, by adjusting the evaporation angle, the light-emitting unit 310 can be in contact with the first part 401, for example, the light-emitting unit 310 is located on at least a portion of the side wall of the first part 401; or, the light-emitting unit 310 may not be in contact with the first part 401, which is not limited in the present application.

[0035] The light conversion layer 50 is located on the side of the light emitting unit 310 away from the substrate 10. The light conversion layer 50 includes a plurality of quantum dot units 510 and a first retaining wall structure 520. The orthographic projection of the quantum dot unit 510 on the substrate 10 overlaps at least partially with the orthographic projection of the light emitting unit 310 on the substrate 10. The first retaining wall structure 520 is disposed between adjacent quantum dot units 510, and / or adjacent quantum dot units 510 are separated by an isolation structure (i.e., isolation column 40). Figure 1 In the display panel shown, the light-emitting unit 310 includes a blue light-emitting unit. That is, the material of the light-emitting unit 310 includes a blue organic light-emitting material, which can emit blue light under voltage drive. The quantum dot unit 510 includes at least a red quantum dot unit 511 and a green quantum dot unit 512, which are respectively arranged on the side of the corresponding light-emitting unit 310 away from the substrate 10. The red quantum dot unit 511 is formed of a red quantum dot material, and the green quantum dot unit 512 is formed of a green quantum dot material. The red quantum dot material and / or the green quantum dot material are conventional materials in the art and are not limited here. In an embodiment of the present application, the first retaining wall structure 520 is a black material, for example, a black organic material or a black metal material, etc., to reduce light crosstalk.

[0036] The blue light emitted by the light-emitting unit 310 emits red light after passing through the red quantum dot unit 511, and the blue light emitted by the light-emitting unit 310 emits green light after passing through the green quantum dot unit 512. Some light-emitting units 310 are not provided with quantum dot units, and the light-emitting units 310 without quantum dot units directly emit blue light. Optionally, the side of the light-emitting unit 310 without quantum dot units facing away from the substrate 10 is filled with a subsequent film layer (for example, an encapsulation layer 60), or is filled with other transparent materials, for example, PI, PET, PEN, epoxy resin, etc., which is not limited in this application.

[0037] exist Figure 1 In the display panel shown, the thickness of the light conversion layer 50 exceeds the isolation structure (i.e., the isolation column 40), and adjacent quantum dot units 510 are separated by the isolation structure (i.e., the isolation column 40) and the first retaining wall structure 520. In other embodiments, the thickness of the light conversion layer 50 does not exceed the isolation structure (i.e., the isolation column 40), and the adjacent quantum dot units 510 are only separated by the isolation structure (i.e., the isolation column 40), and there is no need to set the first retaining wall structure 520. It can be understood that the thickness of the light conversion layer 50 can be set according to actual needs, and can exceed the isolation column 40, or not exceed the isolation column 40, and this application is not limited.

[0038] Continue to refer Figure 1, the display panel further includes an encapsulation layer 60, which is located on the side of the light conversion layer 50 away from the substrate 10. Optionally, the encapsulation layer 60 fills the light-emitting unit 310 without a quantum dot unit. In an embodiment of the present application, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked in sequence in a direction away from the substrate 10. The material of the first inorganic encapsulation layer and the second inorganic encapsulation layer includes at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0039] In the embodiment of the present application, by setting an isolation structure to disconnect adjacent light-emitting units, lateral leakage can be avoided, thereby reducing crosstalk between light-emitting units, which is conducive to the preparation of high PPI products. In addition, the light-emitting unit is combined with the light conversion layer to improve color purity and further enhance the display effect. In addition, the light conversion layer is directly formed on the light-emitting unit, which can also reduce signal crosstalk between the light-emitting units.

[0040] Figure 2 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 2 The display panel shown is Figure 1 The difference of the display panel shown is that the isolation structure includes two isolation columns 40, and the area between the two isolation columns 40 is provided with a first retaining wall structure 520. Since the first retaining wall structure 520 is a black material, the first retaining wall structure 520 is filled between the isolation columns 40 to reduce light crosstalk. In addition, a metal layer can be further provided in the area between the two isolation columns 40, and the metal layer is used as a touch electrode to improve the touch function.

[0041] Figure 3 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 3 The display panel shown is Figure 2The difference of the display panel shown is that part of the material of the light-emitting device layer 30 is arranged on the part of the surface of the isolation column 40 (the second part 402) away from the substrate 10. That is, part of the light-emitting device layer 30 is located on the part of the surface of the second part 402 away from the substrate 10, and is arranged close to the pixel opening 201. This is because, when the material of the light-emitting device layer 30 outside the light-emitting unit 310 (for example, the material of the light-emitting device layer 30 on the surface of the isolation column 40 or between adjacent isolation columns 40) is removed by a photolithography process, in order to protect the light-emitting unit 310 in the pixel opening 201, it is necessary to retain part of the material of the light-emitting device layer 30 on the isolation column 40 to avoid the light-emitting unit 310 from being exposed. It can be understood that the material of the light-emitting device layer 30 retained on the isolation column 40 can be removed or retained in subsequent processes, and this application is not limited. Optionally, the projection width of the light-emitting device layer 30 located on the side of the second part 402 away from the substrate on the substrate 10 is greater than or equal to 0.5um and less than or equal to 5um, preferably greater than or equal to 1um and less than or equal to 2um. Exemplarily, the projection width of the light emitting device layer 30 located on the side of the second portion 402 facing away from the substrate on the substrate 10 is 0.5 um, 1 um, 2 um, 3 um, 4 um, or 5 um.

[0042] Figure 4 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 4 The display panel shown is Figure 2 The difference of the display panel shown is that the display panel further includes a first protective layer 701, which is located on the side of the light-emitting unit 310 away from the substrate 10 and at least covers the light-emitting unit 310. In the embodiment of the present application, in order to remove the material of the light-emitting device layer 30 other than the light-emitting unit 310, a photolithography process is required, that is, it is necessary to coat a photoresist on the side of the light-emitting device layer 30 away from the substrate 10, and remove the material of the light-emitting device layer 30 other than the light-emitting unit 310 by exposure, development and stripping the photoresist. Since the light-emitting unit 310 is sensitive to water vapor, the light-emitting unit 310 may be damaged during the photolithography process. Therefore, the first protective layer 701 is provided on the side of the light-emitting unit 310 away from the substrate 10. In the embodiment of the present application, the material of the first protective layer 701 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride. The first protective layer 701 is a transparent material and will not affect the light extraction efficiency.

[0043] Figure 5 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 5 The display panel shown is Figure 4The difference of the display panel shown is that the display panel further includes a second protective layer 702, and the second protective layer 702 is located between the light conversion layer 50 and the light emitting unit 310. When preparing the light conversion layer 50, in order to avoid damage to the light emitting unit 310, the second protective layer 702 can also be provided. The material of the second protective layer 702 includes at least one of silicon oxide, silicon nitride or silicon oxynitride. Optionally, due to the presence of the first protective layer 701, the second protective layer 702 can be omitted.

[0044] Figure 6 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 6 The display panel shown is Figure 2 The difference between the display panels shown is that the light emitting unit 310 includes a white light emitting unit or an ultraviolet light emitting unit, and the quantum dot unit 510 includes a red quantum dot unit 511, a green quantum dot unit 512, and a blue quantum dot unit 513. Compared with white light emitting materials and ultraviolet light emitting materials, the luminous efficiency and life of the blue light emitting material are relatively low. Therefore, white light emitting materials and / or ultraviolet light emitting materials can be selected as the materials of the light emitting functional unit, so that the life of the display panel can be improved. At this time, the quantum dot unit 510 needs to be provided with a red quantum dot unit 511, a green quantum dot unit 512, and a blue quantum dot unit 513 respectively.

[0045] Figure 7 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 7 The display panel shown is Figure 2 The difference of the display panel shown is that the display panel further includes a color filter layer 80, the color filter layer 80 is located on the side of the encapsulation layer 60 away from the substrate 10, and the color filter layer 80 includes a plurality of color resist units 810 and a second retaining wall structure 820 disposed between adjacent color resist units 810. The second retaining wall structure 820 includes a black material, for example, a black organic material or a black metal material. Optionally, the material of the second retaining wall structure 820 may be the same as or different from the material of the first retaining wall structure 520.

[0046] The orthographic projections of the plurality of color resist units 810 on the substrate 10 at least partially overlap with the orthographic projections of the light emitting unit 310 on the substrate 10. The color of the color resist unit 810 is consistent with the color of the emitted light of the quantum dot unit 510. Specifically, the color resist unit 810 includes a red color resist unit 811, a green color resist unit 812, and a blue color resist unit 813. The red color resist unit 811 corresponds to the red quantum dot unit 511, the green color resist unit 812 corresponds to the green quantum dot unit 512, and the blue color resist unit 813 corresponds to the light emitting unit 310 without a quantum dot unit or corresponds to a blue quantum dot unit. By providing the color filter layer 80, the light crosstalk of different light emitting units can be reduced, and the color saturation of the light can be improved.

[0047] Continue to refer Figure 7 The display panel further includes a cover plate 90 located on the side of the color filter layer 80 away from the substrate 10. Exemplarily, the cover plate 90 includes a glass cover plate.

[0048] Figure 8 It is a schematic diagram of the cross-sectional structure of a display panel provided in yet another embodiment of the present application. Figure 8 The display panel shown is Figure 2 The difference of the display panel shown is that the encapsulation layer 60 is located between the light-emitting device layer 30 (or the light-emitting unit 310) and the light conversion layer 50, and the material of the encapsulation layer 60 is filled between adjacent isolation columns 40. In the embodiment of the present application, the light conversion layer 50 is prepared after the encapsulation layer 60 is prepared, so that the light-emitting unit 310 can be protected from the influence of the preparation process of the light conversion layer 50, and the life of the light-emitting unit 310 can be improved. In addition, the thickness of the encapsulation layer 60 exceeds the height of the isolation column 40, that is, the side of the encapsulation layer 60 away from the substrate 10 is a plane, and when preparing the light conversion layer 50, the process difficulty is relatively low. In this case, adjacent quantum dot units 510 are separated by the first retaining wall structure 520.

[0049] Continue to refer Figure 8 The display panel also includes a color filter layer 80 located on the side of the light conversion layer 50 away from the substrate 10, and the color filter layer 80 includes a plurality of color resist units 810 and a second retaining wall structure 820 disposed between adjacent color resist units 810. For more descriptions of the color filter layer 80, please refer to the descriptions in other parts of this application. The display panel also includes a third protective layer 703 located between the light conversion layer 50 and the color filter layer 80, and the material of the third protective layer 703 includes a resin material. By providing the third protective layer 703, on the one hand, the light conversion layer 50 can be protected to avoid damage to the light conversion layer 50 when preparing the color filter layer 80, and on the other hand, planarization can be achieved to facilitate the preparation of the color filter layer 80.

[0050] Optionally, the display panel further includes a cover plate 90 located on a side of the color filter layer 80 facing away from the substrate 10 , for example, a glass cover plate.

[0051] In a second aspect, an embodiment of the present application provides a method for preparing a display panel, which is used to prepare the above-mentioned display panel.

[0052] Fig. 9 It is a schematic diagram of a process of manufacturing a display panel provided in one embodiment of the present application. Figures 10a-10i FIG. 1 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present application. Fig. 9 As shown, the method includes the following steps.

[0053] Step S910: forming a first electrode layer on one side of the substrate.

[0054] The present application does not limit the method for preparing the first electrode layer, as long as the first electrode layer can be obtained. Optionally, the first electrode material layer is prepared by coating on one side of the substrate, and the first electrode material layer is patterned to obtain the first electrode layer; or, the first electrode layer is prepared on one side of the substrate by magnetron sputtering using a mask.

[0055] like Fig.10a As shown, the first electrode layer includes a plurality of first electrodes 311 arranged at intervals, and the first electrodes 311 are connected to the pixel circuit in the substrate 10 through via holes ( Fig.10a not shown).

[0056] Step S920: forming a pixel definition layer on a side of the first electrode layer facing away from the substrate.

[0057] The present application does not limit the method for preparing the pixel definition layer, as long as the pixel definition layer can be obtained. Optionally, an insulating material layer is formed on the side of the first electrode layer away from the substrate, and the insulating material layer is patterned to obtain the pixel definition layer.

[0058] like Fig.10b As shown, the pixel definition layer is surrounded to form a plurality of pixel openings 201 , and the pixel openings 201 expose a portion of the first electrode 311 .

[0059] Step S930 , forming a plurality of isolation structures on a side of the pixel definition layer away from the substrate.

[0060] The isolation structure includes at least one isolation column, such as Fig.10c As shown, the isolation structure includes two isolation columns 40. It can be understood that the isolation structure can also include other numbers of isolation columns, which is not limited in the present application. The isolation column 40 includes a first portion 401 and a second portion 402 stacked in sequence in a direction away from the substrate 10, and the orthographic projection of the first portion 401 on the substrate 10 is located within the orthographic projection of the second portion 402 on the substrate 10. In the embodiment of the present application, the first portion 401 and the second portion 402 are made of different materials and have different etching rates, so as to form an isolation column with an undercut structure.

[0061] Optionally, a first film layer material and a second film layer material are sequentially formed on the side of the pixel definition layer away from the substrate; the first film layer material and the second film layer material are patterned to form a first portion and a second portion to obtain an isolation column. In the present application, the patterning process includes at least one of dry etching and wet etching. Exemplarily, the first portion includes an organic material and the second portion includes an inorganic material. The second film layer material and the first film layer material are sequentially etched by dry etching to obtain an isolation column.

[0062] Step S940: forming a light-emitting functional layer and a second electrode layer in sequence on a side of the pixel definition layer facing away from the substrate.

[0063] In the embodiment of the present application, the first electrode layer, the light-emitting functional layer and the second electrode layer constitute a light-emitting device layer. The light-emitting device layer includes a plurality of light-emitting units emitting single-color light, at least part of which is located in the pixel opening, and the isolation structure separates adjacent light-emitting units.

[0064] Optionally, a light-emitting functional material layer and a second electrode material layer are sequentially deposited on the entire surface of the pixel definition layer and / or the isolation structure on the side away from the substrate, and the light-emitting functional material layer and the second electrode material layer are located on the surface of the pixel definition layer and / or the isolation structure away from the substrate, and are disconnected by the isolation structure to form a plurality of light-emitting units. The light-emitting functional material layer and the second electrode material layer located at least partially on the side of the isolation structure (i.e., the isolation column) away from the substrate are removed by a photolithography process to obtain a light-emitting functional layer and a second electrode layer. Optionally, the isolation structure includes at least two isolation columns. In this case, the light-emitting functional material layer and the second electrode material layer located at least partially on the side of the isolation column away from the substrate and between two adjacent isolation columns are removed by a photolithography process to obtain a light-emitting functional layer and a second electrode layer. Optionally, after the step of forming a light-emitting functional material layer and a second electrode material layer on the side of the pixel definition layer and / or the isolation structure away from the substrate, the method further includes: forming a first protective material layer on the side of the second electrode material layer away from the substrate (for example, preparing the first protective material layer by a chemical vapor deposition process); removing at least a portion of the light-emitting functional material layer, the second electrode material layer and the first protective material layer located on the side of the isolation structure away from the substrate and / or between two adjacent isolation columns by a photolithography process to obtain a light-emitting functional layer, a second electrode layer and a first protective layer. During the photolithography process, the first protective layer can protect the light-emitting functional layer and the second electrode layer.

[0065] For example, Fig.10c For example, the isolation structure includes two isolation columns 40, and a light-emitting functional material layer, a second electrode material layer and a first protective material layer are sequentially formed on the side of the pixel definition layer 20 and / or the isolation column 40 away from the substrate 10, and the light-emitting functional material layer, the second electrode material layer and the first protective material layer are disconnected by the isolation column, such as Fig.10d A patterned photoresist 410 is formed on the side of the light-emitting functional material layer, the second electrode material layer and the first protective material layer away from the substrate, as shown in FIG. Fig.10e As shown, the photoresist 410 covers the light-emitting functional material layer, the second electrode material layer and the first protective material layer located in the pixel opening, and covers part of the light-emitting functional material layer, the second electrode material layer and the first protective material layer located on the isolation column; the light-emitting functional material layer, the second electrode material layer and the first protective material layer not covered by the photoresist are removed by development, and finally the photoresist 410 is stripped off to obtain Fig.10fCompared with preparing the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit respectively through three processes, the embodiment of the present application prepares multiple light-emitting units 310 through one photolithography process, which simplifies the preparation process and improves the device life.

[0066] Step S950: forming a light conversion layer on a side of the light emitting unit away from the substrate.

[0067] The light conversion layer includes a plurality of quantum dot units and a first retaining wall structure. In the embodiment of the present application, the first retaining wall structure and the quantum dot unit can be prepared by conventional processes in the art, and the present application does not limit this. Exemplarily, the first retaining wall structure is prepared by exposure and development. The quantum dot unit is prepared by exposure and development; or, the quantum dot unit is prepared by inkjet printing.

[0068] When the isolation structure includes a plurality of isolation columns, the first retaining wall structure fills the area between adjacent isolation columns. Figure 10g As shown, the quantum dot unit 510 includes a red quantum dot unit 511 and a green quantum dot unit 512 , and a first retaining wall structure 520 is filled between adjacent isolation columns 40 , so that signal crosstalk can be better reduced.

[0069] Optionally, in order to protect the light-emitting unit, before this step, the method further comprises forming a second protective layer on a side of the light-emitting unit away from the substrate. The second protective layer is prepared by a chemical vapor deposition process.

[0070] Optionally, the method further comprises forming an encapsulation layer on the side of the light conversion layer away from the substrate; forming a color filter layer on the side of the encapsulation layer away from the substrate; and forming a cover plate on the side of the color filter layer away from the substrate, to obtain Fig.10h The display panel shown in the figure can be prepared by the encapsulation layer and the color film layer by the common method in the art, and the present application does not limit it.

[0071] Optionally, before the step of forming the light conversion layer on the side of the light-emitting unit facing away from the substrate, the method further includes: forming an encapsulation layer on the side of the light-emitting unit layer facing away from the substrate. That is, the encapsulation layer is located between the light-emitting unit and the light conversion layer, so that the difficulty of preparing the light conversion layer can be reduced, and the encapsulation layer can protect the light-emitting unit from the influence of the light conversion layer preparation process. After preparing the light conversion layer, a third protective layer is formed on the side of the light conversion layer facing away from the substrate, a color filter layer is formed on the side of the third protective layer facing away from the substrate; and a cover plate is formed on the side of the color filter layer facing away from the substrate, so as to obtain Fig.10i The display panel shown. Optionally, the third protective layer is formed by coating.

[0072] In a third aspect, an embodiment of the present application provides a display device, which includes the display panel described in the above embodiment.

[0073] Fig.11is a schematic diagram of the structure of a display device provided by another embodiment of the present application. Fig.11 As shown, the display device 1100 is a product with an image display function. For example, the display device 1100 can be used to display static images, such as pictures or photos. The display device 1100 can also be used to display dynamic images, such as videos.

[0074] The display device 1100 may be a laptop computer, a mobile phone, a handheld or portable computer, a camera, a camcorder, a vehicle-mounted smart central control screen, a calculator, a smart watch, a GPS navigator, an electronic photo, an electronic billboard or sign, a projector, etc.

[0075] The display device 1100 includes a display panel provided by any of the above embodiments, which may be an organic light emitting diode display panel or a quantum dot electroluminescent display panel.

[0076] In addition, the display device 1100 may also have functions such as taking photos, recording videos, fingerprint recognition, and face recognition. Accordingly, the display device 1100 also includes at least one functional module for implementing the above functions, such as an under-screen camera, an under-screen fingerprint recognition sensor, and the like.

[0077] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0078] The block diagrams of the devices, apparatuses, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagram. As will be appreciated by those skilled in the art, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, referring to "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The words "such as" used here refer to the phrase "such as but not limited to", and can be used interchangeably with them.

[0079] It should also be noted that in the apparatus, device and method of the present application, each component or each step can be decomposed and / or recombined. Such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0080] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0081] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A display panel, characterized in that: include: substrate; A pixel definition layer, located on one side of the substrate, the pixel definition layer is surrounded to form a plurality of pixel openings; a light emitting device layer, the light emitting device layer comprising a plurality of light emitting units emitting light of a single color, at least a portion of the light emitting units being located within the pixel opening; A plurality of isolation structures are located on a side of the pixel definition layer away from the substrate, and the isolation structures isolate adjacent light-emitting units; The light conversion layer is located on a side of the light emitting unit away from the substrate.

2. The display panel according to claim 1, characterized in that: The isolation structure comprises at least one isolation column, the orthographic projection of the isolation column on the substrate surrounds the orthographic projection of the pixel opening on the substrate; Preferably, the isolation column comprises a first portion and a second portion stacked in sequence in a direction away from the substrate, and an orthographic projection of the first portion on the substrate is located within an orthographic projection of the second portion on the substrate; Preferably, the material of the first part is different from the material of the second part; Preferably, the material of the first part includes at least one of an organic material, an inorganic material or a metal material; Preferably, the material of the first part comprises a black organic material; Preferably, the material of the second part includes at least one of an organic material, an inorganic material or a metal material; Preferably, part of the light emitting device layer is located on a surface of the second portion that is away from the substrate and is disposed close to the pixel opening; Preferably, the projection width of the light-emitting device layer located on the side of the second portion away from the substrate on the substrate is greater than or equal to 0.5 um and less than or equal to 5 um, preferably greater than or equal to 1 um and less than or equal to 2 um; Preferably, the light emitting unit is in contact with the first portion.

3. The display panel according to claim 1, characterized in that: The light emitting unit comprises: a first electrode, the first electrode being located between the substrate and the pixel definition layer, the pixel opening exposing a portion of the first electrode; a light-emitting functional unit, the light-emitting functional unit being located at a side of the first electrode away from the substrate, and at least partially covering the exposed first electrode; a second electrode, the second electrode being located at a side of the light-emitting functional unit away from the substrate, and the second electrode covering the light-emitting functional unit; Preferably, the display panel further comprises a first protective layer, wherein the first protective layer is located on a side of the light emitting unit away from the substrate and at least covers the light emitting unit; Preferably, the material of the first protective layer includes at least one of silicon oxide, silicon nitride or silicon oxynitride.

4. The display panel according to any one of claims 1 to 3, characterized in that: The light conversion layer comprises a plurality of quantum dot units and a first retaining wall structure, the orthographic projection of the quantum dot unit on the substrate at least partially overlaps with the orthographic projection of the light-emitting unit on the substrate, the first retaining wall structure is arranged between adjacent quantum dot units, and / or adjacent quantum dot units are separated by the isolation structure; Preferably, the light emitting unit comprises a blue light emitting unit, and the quantum dot unit comprises at least a red quantum dot unit and a green quantum dot unit; Preferably, the light-emitting unit comprises a white light-emitting unit or an ultraviolet light-emitting unit, and the quantum dot unit comprises a red quantum dot unit, a green quantum dot unit and a blue quantum dot unit; Preferably, the display panel further comprises an encapsulation layer, and the encapsulation layer is located on a side of the light conversion layer away from the substrate; Preferably, the encapsulation layer comprises a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked in sequence in a direction away from the substrate; Preferably, the display panel further comprises a second protective layer, wherein the second protective layer is located between the light conversion layer and the light emitting unit; Preferably, the material of the second protective layer includes at least one of silicon oxide, silicon nitride or silicon oxynitride; Preferably, the isolation structure comprises at least two isolation columns, and the first retaining wall structure is arranged in the area between adjacent isolation columns; Preferably, the display panel further comprises a color filter layer located on a side of the encapsulation layer away from the substrate, the color filter layer comprises a plurality of color resist units and a second retaining wall structure arranged between adjacent color resist units, and the orthographic projections of the plurality of color resist units on the substrate at least partially overlap with the orthographic projections of the light-emitting units on the substrate; Preferably, the color resistance unit includes a red color resistance unit, a green color resistance unit and a blue color resistance unit; Preferably, the display panel further comprises a cover plate located on a side of the color filter layer away from the substrate.

5. The display panel according to any one of claims 1 to 3, characterized in that: Also included is an encapsulation layer, the encapsulation layer being located between the light emitting device layer and the light conversion layer; Preferably, the encapsulation layer comprises a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked in sequence in a direction away from the substrate; Preferably, the isolation structure comprises at least two isolation columns, and the material of the encapsulation layer is filled between adjacent isolation columns; Preferably, the light conversion layer comprises a plurality of quantum dot units and a first retaining wall structure, the orthographic projection of the quantum dot unit on the substrate at least partially overlaps with the orthographic projection of the light-emitting unit on the substrate, and the first retaining wall structure is arranged between adjacent quantum dot units; Preferably, the display panel further comprises a color filter layer located on a side of the light conversion layer away from the substrate, the color filter layer comprises a plurality of color resist units and a second retaining wall structure arranged between adjacent color resist units, and the orthographic projections of the plurality of color resist units on the substrate at least partially overlap with the orthographic projections of the light emitting units on the substrate; Preferably, the color resistance unit includes a red color resistance unit, a green color resistance unit and a blue color resistance unit; Preferably, the display panel further comprises a third protective layer located between the light conversion layer and the color filter layer; Preferably, the material of the third protective layer includes a resin material; Preferably, the display panel further comprises a cover plate located on a side of the color filter layer away from the substrate.

6. A method for preparing a display panel, characterized in that: include: forming a first electrode layer on one side of the substrate, wherein the first electrode layer comprises a plurality of first electrodes arranged at intervals; forming a pixel definition layer on a side of the first electrode layer away from the substrate, wherein the pixel definition layer is surrounded to form a plurality of pixel openings, and the pixel openings expose a portion of the first electrode; forming a plurality of isolation structures on a side of the pixel definition layer away from the substrate; A light-emitting function layer and a second electrode layer are sequentially formed on the side of the pixel definition layer away from the substrate, wherein the first electrode layer, the light-emitting function layer and the second electrode layer constitute a light-emitting device layer, wherein the light-emitting device layer includes a plurality of light-emitting units emitting single-color light, wherein at least a portion of the light-emitting units is located in the pixel opening, and the isolation structure isolates adjacent light-emitting units; A light conversion layer is formed on a side of the light emitting unit away from the substrate.

7. The method according to claim 6, characterized in that The isolation structure includes at least one isolation column, and a plurality of isolation structures are formed on a side of the pixel definition layer away from the substrate, including: Sequentially forming a first film layer material and a second film layer material on a side of the pixel definition layer away from the substrate; Performing patterning on the first film layer material and the second film layer material to form a first portion and a second portion to obtain the isolation column, wherein the orthographic projection of the first portion on the substrate is located within the orthographic projection of the second portion on the substrate; Preferably, the patterning process includes at least one of dry etching and wet etching; Preferably, the step of sequentially forming a light-emitting functional layer and a second electrode layer on a side of the pixel definition layer away from the substrate comprises: sequentially evaporating a light-emitting functional material layer and a second electrode material layer on a side of the pixel definition layer and / or the isolation structure away from the substrate; removing at least a portion of the light-emitting functional material layer and the second electrode material layer located on a side of the isolation column away from the substrate by a photolithography process to obtain the light-emitting functional layer and the second electrode layer; Preferably, the isolation structure comprises at least two isolation columns, the light-emitting functional layer and the second electrode layer are sequentially formed on the side of the pixel definition layer away from the substrate, and further comprises: removing the light-emitting functional material layer and the second electrode material layer between two adjacent isolation columns by a photolithography process; Preferably, after the step of forming a light-emitting functional material layer and a second electrode material layer on the side of the pixel definition layer and / or the isolation structure facing away from the substrate, the method further includes: forming a first protective material layer on the side of the second electrode material layer facing away from the substrate; removing at least part of the light-emitting functional material layer, the second electrode material layer and the first protective material layer located on the side of the isolation structure facing away from the substrate and / or between two adjacent isolation columns through a photolithography process to obtain the light-emitting functional layer, the second electrode layer and the first protective layer.

8. The method according to claim 6, characterized in that Before the step of forming a light conversion layer on the side of the light emitting device layer away from the substrate, the method further comprises: forming a second protective layer on the side of the light emitting unit away from the substrate; Preferably, the method further comprises: forming an encapsulation layer on a side of the light conversion layer away from the substrate; forming a color filter layer on a side of the encapsulation layer away from the substrate; A cover plate is formed on the side of the color filter layer away from the substrate.

9. The method according to claim 6, characterized in that Before the step of forming a light conversion layer on the side of the light emitting unit away from the substrate, the method further comprises: forming an encapsulation layer on the side of the light emitting unit layer away from the substrate; Preferably, the method further comprises: forming a third protective layer on a side of the light conversion layer away from the substrate; forming a color filter layer on a side of the third protective layer away from the substrate; A cover plate is formed on the side of the color filter layer away from the substrate.

10. A display device, characterized in that: A display panel comprising any one of claims 1 to 5, or a display panel prepared by the method according to any one of claims 6 to 9.

Images