Rhodium-loaded sulfur defect indium zinc sulfide as well as preparation method and application thereof

Abstract

The invention relates to rhodium-loaded sulfur-defect indium zinc sulfide, which is characterized in that rhodium is loaded on the surface of sulfur-defect indium zinc sulfide, and the rhodium-loaded sulfur-defect indium zinc sulfide has a nano flower-shaped structure. The rhodium-loaded sulfur-defect indium zinc sulfide disclosed by the invention is a photocatalyst with excellent performance, is high in photocatalytic denitration efficiency and good in stability, and is beneficial to recovery and reutilization of the photocatalyst. Meanwhile, the preparation method of the rhodium-loaded sulfur defect indium zinc sulfide is simple, raw materials are easy to obtain, and the preparation method is suitable for large-scale industrial application.

Description

Technical Field

[0001] The invention relates to the technical field of environmentally friendly materials, and in particular to a rhodium-loaded sulfur-deficient indium zinc sulfide and a preparation method and application thereof. Background Art

[0002] Air pollution is one of the huge problems currently facing my country. Air pollution is mainly divided into indoor pollution and outdoor pollution. Indoor pollutants mainly include formaldehyde, toluene, etc. Outdoor gas pollutants mainly include inhalable particulate matter, nitrogen oxides, sulfur dioxide and carbon monoxide. With the development of my country's economy and the improvement of people's living standards, a large amount of garbage, solid waste, etc. will be generated. Nitrogen oxides produced by the incineration of solid waste are one of the typical gaseous environmental pollutants, which will cause a series of environmental problems such as haze and acid rain. At present, the main methods for treating waste gas are activated carbon adsorption, catalytic combustion, biofiltration, alkali neutralization, etc., but these methods are relatively expensive and can only treat high-concentration waste gas. Semiconductor photocatalytic technology is a very promising technology in the field of environmental remediation and energy conversion, and has a significant effect on the treatment of low-concentration (ppb, one billionth level) waste gas.

[0003] At present, graphite carbon nitride, covalent organic framework, indium zinc sulfide, cadmium sulfide, titanium dioxide, zinc oxide, etc. have been proved to be promising photocatalytic materials due to their suitable band structures. Among them, indium zinc sulfide has become a potential candidate due to its suitable band gap, suitable band position, high stability and good photoelectrochemical performance, which has been widely used in photocatalytic reactions. Summary of the invention

[0004] Problem that the invention aims to solve

[0005] In view of the above problems existing in the prior art, the object of the present invention is to provide an indium zinc sulfide material with good stability, easy preparation and better photocatalytic performance.

[0006] Solutions for solving problems

[0007] The invention provides a rhodium-loaded sulfur-deficient indium zinc sulfide, wherein the rhodium-loaded sulfur-deficient indium zinc sulfide is obtained by loading rhodium on the surface of the sulfur-deficient indium zinc sulfide.

[0008] Preferably, the rhodium-supported sulfur-deficient indium zinc sulfide has a nanoflower-like structure.

[0009] Preferably, the raw materials for preparing the rhodium-loaded sulfur-deficient indium zinc sulfide include sulfur-deficient indium zinc sulfide and a rhodium-containing metal salt;

[0010] More preferably, the rhodium-containing metal salt is one or more of rhodium chloride, rhodium nitrate, and rhodium sulfate;

[0011] Further preferably, the rhodium-containing metal salt is rhodium chloride.

[0012] Preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.1 to 100:2;

[0013] More preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:1;

[0014] Further preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.5.

[0015] The present invention also provides a method for preparing the rhodium-loaded sulfur-deficient indium zinc sulfide, the method comprising the following steps:

[0016] (1) Preparing indium zinc sulfide nanoflowers;

[0017] (2) using the indium zinc sulfide nanoflowers prepared in step (1) to prepare sulfur-deficient indium zinc sulfide;

[0018] (3) Using the sulfur-deficient indium zinc sulfide prepared in step (2) to prepare rhodium-loaded sulfur-deficient indium zinc sulfide.

[0019] Preferably, the indium zinc sulfide nanoflowers described in step (1) use zinc acetate, indium chloride and thioacetamide as precursors;

[0020] Preferably, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:1-3:3-5, more preferably, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:2:4;

[0021] Preferably, the indium zinc sulfide nanoflowers in step (1) are prepared by a hydrothermal method;

[0022] Preferably, the solvent of the hydrothermal method is deionized water;

[0023] Preferably, the reaction temperature of the hydrothermal method is 100-200°C, more preferably, the reaction temperature of the hydrothermal method is 180°C;

[0024] Preferably, the reaction time of the hydrothermal method is 12 to 24 hours, and more preferably, the reaction time of the hydrothermal method is 18 hours.

[0025] Preferably, the sulfur-deficient indium zinc sulfide described in step (2) is prepared by hydrogen reduction method;

[0026] Preferably, the sulfur-deficient indium zinc sulfide in step (2) is prepared by introducing sulfur defects into the indium zinc sulfide nanoflowers prepared in step (1) by hydrogen reduction method;

[0027] More preferably, step (2) is to calcine the indium zinc sulfide nanoflowers obtained in step (1) under a hydrogen-argon mixed gas to obtain the sulfur-deficient indium zinc sulfide;

[0028] Preferably, the hydrogen-argon mixed gas is a 5% hydrogen-argon mixed gas;

[0029] Preferably, the calcination temperature is 100-300°C, more preferably, the calcination temperature is 200°C;

[0030] Preferably, the calcination time is 0.5 to 3 hours, more preferably, the calcination time is 1 hour.

[0031] Preferably, the rhodium-supported sulfur-deficient indium zinc sulfide in step (3) is prepared by an impregnation method;

[0032] Preferably, the rhodium-loaded sulfur-deficient indium zinc sulfide described in step (3) is prepared by loading rhodium on the sulfur-deficient indium zinc sulfide prepared in step (2) by an impregnation method;

[0033] More preferably, step (3) is to heat the sulfur-deficient indium zinc sulfide and the rhodium-containing metal salt obtained in step (2) in a solvent and then evaporate the solvent to obtain the rhodium-loaded sulfur-deficient indium zinc sulfide;

[0034] Preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:2, and more preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.5;

[0035] Preferably, the heating temperature is 60-80°C, more preferably, the heating temperature is 80°C;

[0036] Preferably, the solvent is ethanol and / or methanol;

[0037] More preferably, the solvent is ethanol.

[0038] The present invention also provides a photocatalyst, which comprises the rhodium-loaded sulfur-deficient indium zinc sulfide.

[0039] The present invention also provides an application of the rhodium-loaded sulfur-deficient indium zinc sulfide or the photocatalyst in the field of environmental purification. Preferably, the environmental purification includes nitrogen oxide purification.

[0040] Effects of the Invention

[0041] The rhodium-loaded sulfur-deficient indium zinc sulfide of the present invention is a photocatalyst with excellent performance, high photocatalytic denitration efficiency, good stability, and is conducive to the recovery and reuse of the photocatalyst. At the same time, the preparation method of the rhodium-loaded sulfur-deficient indium zinc sulfide of the present invention is simple, the raw materials are easily available, and it is suitable for large-scale industrial application. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 This is a scanning electron microscope (SEM) image of indium zinc sulfide.

[0043] Figure 2 This is a transmission electron microscopy (TEM) image of indium zinc sulfide.

[0044] Figure 3 This is a scanning electron microscope (SEM) image of indium zinc sulfide with sulfur defects.

[0045] Figure 4 Electron paramagnetic resonance (EPR) spectrum of indium zinc sulfide with sulfur defects.

[0046] Figure 5 This is a scanning electron microscopy (SEM) image of rhodium-supported sulfur-deficient indium zinc sulfide.

[0047] Figure 6 Graph showing the photocatalytic performance of rhodium-supported sulfur-deficient indium zinc sulfide for the removal of nitrogen oxides.

[0048] Figure 7 This is a cycle diagram of the photocatalytic denitrification performance of rhodium-loaded sulfur-deficient indium zinc sulfide. DETAILED DESCRIPTION

[0049] In order to make the technical solutions and beneficial effects of the present invention more clearly understandable, the following is a detailed description by listing specific embodiments. The drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application belongs.

[0050] As used herein, the term "nanoflower", "nanoflower structure" or "nanoflower-like structure" refers to a flower or tree-like structure formed by a compound of a certain element at the microscopic level, with the length and thickness both in the nanometer range.

[0051] The invention provides a rhodium-loaded sulfur-deficient indium zinc sulfide, wherein the rhodium-loaded sulfur-deficient indium zinc sulfide is obtained by loading rhodium on the surface of the sulfur-deficient indium zinc sulfide.

[0052] In certain embodiments, the rhodium-supported sulfur-deficient indium zinc sulfide has a nanoflower-like structure.

[0053] In certain embodiments, the raw materials for preparing the rhodium-supported sulfur-deficient indium zinc sulfide include sulfur-deficient indium zinc sulfide and a rhodium-containing metal salt.

[0054] In certain embodiments, the rhodium-containing metal salt is one or more of rhodium chloride, rhodium nitrate, and rhodium sulfate.

[0055] In certain embodiments, the rhodium-containing metal salt is rhodium chloride, rhodium nitrate, and rhodium sulfate.

[0056] In certain embodiments, the rhodium-containing metal salt is rhodium chloride and rhodium nitrate.

[0057] In certain embodiments, the rhodium-containing metal salt is rhodium chloride and rhodium sulfate.

[0058] In certain embodiments, the rhodium-containing metal salt is rhodium nitrate and rhodium sulfate.

[0059] In certain embodiments, the rhodium-containing metal salt is rhodium chloride.

[0060] In certain embodiments, the rhodium-containing metal salt is rhodium nitrate.

[0061] In certain embodiments, the rhodium-containing metal salt is rhodium sulfate.

[0062] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.1 to 100:2.

[0063] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.1, or 100:0.2, or 100:0.3, or 100:0.4, or 100:0.5, or 100:0.6, or 100:0.7, or 100:0.8, or 100:0.9, or 100:1, or 100:1.1, or 100:1.2, or 100:1.3, or 100:1.4, or 100:1.5, or 100:1.6, or 100:1.7, or 100:1.8, or 100:1.9, or 100:2.

[0064] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:1.

[0065] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.5.

[0066] The present invention also provides a method for preparing the rhodium-loaded sulfur-deficient indium zinc sulfide, the method comprising the following steps:

[0067] (1) Preparing indium zinc sulfide nanoflowers;

[0068] (2) using the indium zinc sulfide nanoflowers prepared in step (1) to prepare sulfur-deficient indium zinc sulfide;

[0069] (3) Using the sulfur-deficient indium zinc sulfide prepared in step (2) to prepare rhodium-loaded sulfur-deficient indium zinc sulfide.

[0070] In certain embodiments, the indium zinc sulfide nanoflowers described in step (1) use zinc acetate, indium chloride and thioacetamide as precursors.

[0071] In certain embodiments, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:1-3:3-5.

[0072] In certain embodiments, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:1:3, or 1:1:4, or 1:1:5, or 1:2:3, or 1:2:4, or 1:2:5, or 1:3:3, or 1:3:4, or 1:3:5.

[0073] In certain embodiments, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:2:4.

[0074] In certain embodiments, the indium zinc sulfide nanoflowers in step (1) are prepared by a hydrothermal method.

[0075] In certain embodiments, the solvent of the hydrothermal method is deionized water.

[0076] In certain embodiments, the reaction temperature of the hydrothermal method is 100-200°C.

[0077] In certain embodiments, the reaction temperature of the hydrothermal method is 100°C, or 110°C, or 120°C, or 130°C, or 140°C, or 150°C, or 160°C, or 170°C, or 180°C, or 190°C, or 200°C.

[0078] In certain embodiments, the reaction temperature of the hydrothermal method is 180°C.

[0079] In certain embodiments, the reaction time of the hydrothermal method is 12 to 24 hours.

[0080] In certain embodiments, the reaction time of the hydrothermal method is 12 hours, or 13 hours, or 14 hours, or 15 hours, or 16 hours, or 17 hours, or 18 hours, or 19 hours, or 20 hours, or 21 hours, or 22 hours, or 23 hours, or 24 hours.

[0081] In certain embodiments, the reaction time of the hydrothermal method is 18 hours.

[0082] In certain embodiments, the sulfur-deficient indium zinc sulfide described in step (2) is prepared by hydrogen reduction method.

[0083] In certain embodiments, the sulfur-deficient indium zinc sulfide described in step (2) is obtained by introducing sulfur defects into the indium zinc sulfide nanoflowers obtained in step (1) by hydrogen reduction method.

[0084] In certain embodiments, step (2) is to calcine the indium zinc sulfide nanoflowers obtained in step (1) under a hydrogen-argon mixed gas to obtain the sulfur-deficient indium zinc sulfide.

[0085] In certain embodiments, the hydrogen-argon mixed gas is a 5% hydrogen-argon mixed gas.

[0086] In certain embodiments, the calcination temperature is 100-300°C.

[0087] In certain embodiments, the calcination temperature is 100°C, or 110°C, or 120°C, or 130°C, or 140°C, or 150°C, or 160°C, or 170°C, or 180°C, or 190°C, or 200°C, or 210°C, or 220°C, or 230°C, or 240°C, or 250°C, or 260°C, or 270°C, or 280°C, or 290°C, or 300°C.

[0088] In certain embodiments, the calcination temperature is 200°C.

[0089] In certain embodiments, the calcination time is 0.5 to 3 hours.

[0090] In certain embodiments, the calcination time is 0.5 hours, or 0.6 hours, or 0.7 hours, or 0.8 hours, or 0.9 hours, or 1 hour, or 1.1 hours, or 1.2 hours, or 1.3 hours, or 1.4 hours, or 1.5 hours, or 1.6 hours, or 1.7 hours, or 1.8 hours, or 1.9 hours, or 2 hours, or 2.1 hours, or 2.2 hours, or 2.3 hours, or 2.4 hours, or 2.5 hours, or 2.6 hours, or 2.7 hours, or 2.8 hours, or 2.9 hours, or 3 hours.

[0091] In certain embodiments, the calcination time is 1 hour.

[0092] In certain embodiments, the sulfur-deficient indium zinc sulfide prepared in step (2) has a nanoflower-like structure.

[0093] In certain embodiments, the rhodium-supported sulfur-deficient indium zinc sulfide described in step (3) is prepared by an impregnation method.

[0094] In certain embodiments, the rhodium-loaded sulfur-deficient indium zinc sulfide described in step (3) is obtained by loading rhodium on the sulfur-deficient indium zinc sulfide obtained in step (2) by an impregnation method.

[0095] In certain embodiments, step (3) is to heat the sulfur-deficient indium zinc sulfide and the rhodium-containing metal salt obtained in step (2) in a solvent and then evaporate the solvent to obtain the rhodium-loaded sulfur-deficient indium zinc sulfide.

[0096] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:2.

[0097] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3, or 100:0.4, or 100:0.5, or 100:0.6, or 100:0.7, or 100:0.8, or 100:0.9, or 100:1, or 100:1.1, or 100:1.2, or 100:1.3, or 100:1.4, or 100:1.5, or 100:1.6, or 100:1.7, or 100:1.8, or 100:1.9, or 100:2.

[0098] In certain embodiments, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.5.

[0099] In certain embodiments, the heating temperature is 60-80°C.

[0100] In certain embodiments, the heating temperature is 60°C, or 61°C, or 62°C, or 63°C, or 64°C, or 65°C, or 66°C, or 67°C, or 68°C, or 69°C, or 70°C, or 71°C, or 72°C, or 73°C, or 74°C, or 75°C, or 76°C, or 77°C, or 78°C, or 79°C, or 80°C.

[0101] In certain embodiments, the heating temperature is 80°C.

[0102] In certain embodiments, the solvent is ethanol and / or methanol.

[0103] In certain embodiments, the solvent is ethanol and methanol.

[0104] In certain embodiments, the solvent is ethanol.

[0105] In certain embodiments, the solvent is methanol.

[0106] The present invention also provides a photocatalyst, which comprises the rhodium-loaded sulfur-deficient indium zinc sulfide.

[0107] The present invention also provides an application of the rhodium-loaded sulfur-deficient indium zinc sulfide or the photocatalyst in the field of environmental purification.

[0108] In certain embodiments, the environmental purification comprises nitrogen oxide purification.

[0109] Example 1: Preparation of Indium Zinc Sulfide Nanoflowers

[0110] 442 mg of indium chloride, 183.5 mg of zinc acetate and 300 mg of thioacetamide were added into deionized water and stirred at room temperature for 30 minutes until it became clear and transparent. The solution was poured into a reactor and reacted in an oven at 180°C for 18 hours to obtain indium zinc sulfide nanoflowers.

[0111] The obtained indium zinc sulfide nanoflowers were photographed by scanning electron microscope (SEM) and transmission electron microscope (TEM). Figure 1 , 2 As shown, it can be seen that the indium zinc sulfide presents a nanoflower-like structure.

[0112] Example 2: Preparation of Indium Zinc Sulfide with Sulfur Defects

[0113] 200 mg of the indium zinc sulfide nanoflowers prepared in Example 1 were rapidly heated at 200° C. for 60 minutes in an argon atmosphere containing 5% hydrogen, and then cooled to room temperature to obtain indium zinc sulfide with sulfur defects.

[0114] The obtained indium zinc sulfide with sulfur defects was photographed by scanning electron microscopy (SEM). Figure 3 As shown, it can be seen that the morphology of indium zinc sulfide containing sulfur defects has not changed and still presents a nanoflower-like structure.

[0115] Electron paramagnetic resonance (EPR) test was performed on indium zinc sulfide with sulfur defects. The prepared sulfur-deficient indium zinc sulfide powder was loaded into a paramagnetic tube dedicated to EPR (Bruker DesktopmicroESR) for testing. Figure 4 As shown, sulfur defects were successfully introduced into InZnS.

[0116] Example 3: Preparation of Rhodium-supported Sulfur-deficient Indium Zinc Sulfide 1

[0117] 100 mg of sulfur-deficient indium zinc sulfide powder prepared in Example 2 and 0.5 mg of rhodium chloride were dispersed in 5 ml of ethanol solution, and the solvent was evaporated under stirring at 80° C. to obtain rhodium-supported sulfur-deficient indium zinc sulfide 1.

[0118] The obtained rhodium-supported sulfur-deficient indium zinc sulfide 1 was photographed by scanning electron microscopy (SEM). Figure 5 As shown, it can be seen that the morphology of rhodium-loaded sulfur-deficient indium zinc sulfide 1 has not changed and still presents a nanoflower-like structure.

[0119] Example 4: Preparation of Rhodium-supported Sulfur-deficient Indium Zinc Sulfide 2

[0120] 100 mg of sulfur-deficient indium zinc sulfide powder prepared in Example 2 and 1.0 mg of rhodium nitrate were dispersed in 5 ml of methanol solution, and the solvent was evaporated under stirring at 80° C. to obtain rhodium-loaded sulfur-deficient indium zinc sulfide 2, which exhibited a nanoflower-like structure.

[0121] Example 5: Preparation of Rhodium-supported Sulfur-deficient Indium Zinc Sulfide 3

[0122] 100 mg of sulfur-deficient indium zinc sulfide powder prepared in Example 2 and 1.5 mg of rhodium sulfate were dispersed in 5 ml of ethanol solution, and the solvent was evaporated under stirring at 80° C. to obtain rhodium-loaded sulfur-deficient indium zinc sulfide 3, which exhibited a nanoflower-like structure.

[0123] Example 6: Photocatalytic denitrification nitrogen oxide oxidation experiment

[0124] Using a simple reactor containing quartz glass, 80 mg of the rhodium-loaded sulfur-deficient indium zinc sulfide 1 prepared in Example 3 was placed on a square plate in the center of the reactor. The reactor was evacuated, and the flow rates of high-purity air (1 liter) and nitric oxide (concentration of 10 ppm) were adjusted so that the flow rate of the mixed gas was 1.2 liters per minute, and the concentration of nitrogen oxides was stabilized at 600 ppb. After 30 minutes, the xenon lamp light source was turned on to start the photocatalytic denitrification experiment.

[0125] Photocatalytic performance in removing nitrogen oxides Figure 6 As shown in the figure, the photocatalytic denitrification efficiency of the rhodium-supported sulfur-deficient indium zinc sulfide 1 is significantly better than that of the original indium zinc sulfide material; the photocatalytic denitrification performance of the rhodium-supported sulfur-deficient indium zinc sulfide 1 is cycled as shown in the figure. Figure 7 The results show that the photocatalytic denitrification efficiency of rhodium-supported sulfur-deficient indium zinc sulfide 1 can reach 61%, and it can be recycled many times.

[0126] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present invention that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present invention and do not limit the scope of protection of the patent of the present invention.

Claims

1. A rhodium-supported sulfur-deficient indium zinc sulfide, characterized in that: The rhodium-loaded sulfur-deficient indium zinc sulfide is prepared by loading rhodium on the surface of sulfur-deficient indium zinc sulfide.

2. The rhodium-supported sulfur-deficient indium zinc sulfide according to claim 1, characterized in that The rhodium-supported sulfur-deficient indium zinc sulfide has a nanoflower-like structure.

3. The rhodium-supported sulfur-deficient indium zinc sulfide according to claim 2, characterized in that The raw materials for preparing the rhodium-loaded sulfur-deficient indium zinc sulfide include sulfur-deficient indium zinc sulfide and a rhodium-containing metal salt; Preferably, the rhodium-containing metal salt is one or more of rhodium chloride, rhodium nitrate, and rhodium sulfate; More preferably, the rhodium-containing metal salt is rhodium chloride.

4. The rhodium-supported sulfur-deficient indium zinc sulfide according to claim 3, characterized in that The mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.1 to 100:2; Preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:1; More preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.

5.

5. A method for preparing rhodium-supported sulfur-deficient indium zinc sulfide according to any one of claims 1 to 4, characterized in that: The method comprises the following steps: (1) Preparing indium zinc sulfide nanoflowers; (2) using the indium zinc sulfide nanoflowers prepared in step (1) to prepare sulfur-deficient indium zinc sulfide; (3) Using the sulfur-deficient indium zinc sulfide prepared in step (2) to prepare rhodium-loaded sulfur-deficient indium zinc sulfide.

6. The preparation method according to claim 5, characterized in that: The indium zinc sulfide nanoflowers described in step (1) use zinc acetate, indium chloride and thioacetamide as precursors; Preferably, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:1-3:3-5, more preferably, the molar ratio of zinc acetate, indium chloride and thioacetamide is 1:2:4; Preferably, the indium zinc sulfide nanoflowers in step (1) are prepared by a hydrothermal method; Preferably, the solvent of the hydrothermal method is deionized water; Preferably, the reaction temperature of the hydrothermal method is 100-200°C, more preferably, the reaction temperature of the hydrothermal method is 180°C; Preferably, the reaction time of the hydrothermal method is 12 to 24 hours, and more preferably, the reaction time of the hydrothermal method is 18 hours.

7. The preparation method according to claim 5, characterized in that: The sulfur-deficient indium zinc sulfide described in step (2) is prepared by hydrogen reduction method; Preferably, the sulfur-deficient indium zinc sulfide in step (2) is prepared by introducing sulfur defects into the indium zinc sulfide nanoflowers prepared in step (1) by hydrogen reduction method; More preferably, step (2) is to calcine the indium zinc sulfide nanoflowers obtained in step (1) under a hydrogen-argon mixed gas to obtain the sulfur-deficient indium zinc sulfide; Preferably, the hydrogen-argon mixed gas is a 5% hydrogen-argon mixed gas; Preferably, the calcination temperature is 100-300°C, more preferably, the calcination temperature is 200°C; Preferably, the calcination time is 0.5 to 3 hours, more preferably, the calcination time is 1 hour.

8. The preparation method according to claim 5, characterized in that: The rhodium-loaded sulfur-deficient indium zinc sulfide described in step (3) is prepared by an impregnation method; Preferably, the rhodium-loaded sulfur-deficient indium zinc sulfide described in step (3) is prepared by loading rhodium on the sulfur-deficient indium zinc sulfide prepared in step (2) by an impregnation method; More preferably, step (3) is to heat the sulfur-deficient indium zinc sulfide and the rhodium-containing metal salt obtained in step (2) in a solvent and then evaporate the solvent to obtain the rhodium-loaded sulfur-deficient indium zinc sulfide; Preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.3 to 100:2, and more preferably, the mass ratio of the sulfur-deficient indium zinc sulfide to the rhodium-containing metal salt is 100:0.5; Preferably, the heating temperature is 60-80°C, more preferably, the heating temperature is 80°C; Preferably, the solvent is ethanol and / or methanol, more preferably, the solvent is ethanol.

9. A photocatalyst, characterized in that: The photocatalyst comprises the rhodium-supported sulfur-deficient indium zinc sulfide according to any one of claims 1-4.

10. Use of the rhodium-supported sulfur-deficient indium zinc sulfide according to any one of claims 1 to 4, or the photocatalyst according to claim 9 in the field of environmental purification, preferably, the environmental purification includes nitrogen oxide purification.

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