Rare earth silicate glass, preparation method, glass substrate and application

Abstract

The invention provides rare earth silicate glass, a preparation method, a glass substrate and application. The rare earth silicate glass comprises the following components: silicon dioxide, boric oxide, potassium oxide, aluminum oxide and rare earth oxides, wherein the rare earth oxides comprise one or more of oxides consisting of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium. Wherein the mass percentage content of silicon dioxide, boron oxide, potassium oxide and aluminum oxide is more than or equal to 99.5% and less than or equal to 99.9%. The expansion coefficient of the rare earth silicate glass is close to that of a monocrystalline silicon wafer, the expansion curve of the rare earth silicate glass is close to that of the monocrystalline silicon wafer, chip damage caused by expansion coefficient difference can be avoided in the using process, the service life is prolonged, and stable dielectric constant and dielectric loss are achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of glass production, and in particular to a rare earth silicate glass and a preparation method thereof, a glass substrate and applications thereof. Background Art

[0002] With the development of economy and the progress of science and technology, various devices are developing towards multifunctional integration, miniaturization, reliability, stability, environmental protection, etc. At present, high-power chip packaging devices can be used in aerospace, microwave communication, electronic components and other fields. With the development of devices towards multifunctional integration, miniaturization and lightness, traditional chip packaging is difficult to meet the reliability requirements of current devices.

[0003] The traditional chip packaging process is used to install semiconductor integrated circuit chips. The substrate is made of PCB resin material, which plays the role of conducting, fixing, sealing, protecting the chip and dissipating heat. Chip packaging includes the process steps of wafer cutting, chip mounting, wire bonding, injection molding, and packaging testing.

[0004] However, organic substrates made of PCB resin have defects such as low thermal conductivity, high dielectric loss, and slow signal transmission speed. Therefore, the above-mentioned organic substrates are not suitable for application in high-power devices. Summary of the invention

[0005] The object of the present invention is to provide a rare earth silicate glass, whose expansion coefficient is close to that of a single crystal silicon wafer, whose expansion curve is close to that of a single crystal silicon wafer, which can avoid chip damage caused by the difference in expansion coefficient during use, prolong the service life, and has a stable dielectric constant and dielectric loss. The glass substrate formed by the rare earth silicate glass provided in this application is conducive to chip architecture engineers to create higher density and higher performance chip packaging, providing strong support for data-intensive chip production such as artificial intelligence, and is more suitable for application in high-power devices.

[0006] The present application provides a rare earth silicate glass, which comprises the following components, measured by mass percentage: 77%≤silicon dioxide≤80%, 16%≤boron oxide≤20%, 1.5%≤potassium oxide≤2.7%, 1.3%≤aluminum oxide≤1.6%, and 0.05%<rare earth oxide≤0.5%;

[0007] Among them, 99.5%≤silicon dioxide+boron oxide+potassium oxide+aluminum oxide≤99.9%;

[0008] The rare earth oxides include one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium;

[0009] When tested under an environment of 20° C. and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.1, and the dielectric loss is less than 0.0006. Furthermore, when the environment changes at 20° C.±10° C., the dielectric constant of the rare earth silicate glass does not fluctuate.

[0010] In one embodiment, the rare earth oxide is a mixture of cerium oxide and samarium oxide;

[0011] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0012] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0013] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide;

[0014] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide;

[0015] The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide;

[0016] The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide;

[0017] The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or,

[0018] The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

[0019] In one embodiment, the concentration of metal impurities in the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide and the rare earth oxide is less than 100 ppm.

[0020] The present application also provides a method for preparing rare earth silicate glass, comprising:

[0021] S1, providing silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and mixing them according to the mass percentage of any one of the above items to form mixed particles;

[0022] S2, placing the mixed particles into a crucible for dissolution, wherein the high temperature of 1450° C. to 1600° C. is used for melting and homogenization for 32 to 48 hours, and the glass liquid is injected into room temperature distilled water within 2 minutes for cooling to form a preformed glass, and then the glass is crushed into a preformed glass powder of 1 to 3 microns;

[0023] S3, placing the preformed glass powder into a forming container and heating it to form rare earth silicate glass;

[0024] The rare earth silicate glass formed by the above preparation method is tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and the dielectric constant of the rare earth silicate glass does not fluctuate when the environment changes at 20°C±10°C.

[0025] In one embodiment, the rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide;

[0026] In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1460°C±10°C at a heating rate of 50°C / min, and maintained at 1460°C±10°C for 40 hours, so that chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

[0027] In one embodiment, the rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide;

[0028] In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1580°C±10°C at a heating rate of 100°C / min, and maintained at 1580°C±10°C for 32 hours; special chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

[0029] In one embodiment, in S3, the preformed glass may be rolled into a glass sheet by rolling the preformed glass.

[0030] The present application also provides a glass substrate having multiple layers of glass plate layers and glass paste layers alternately stacked from bottom to top, wherein the number of layers of the glass plate layers is equal to the number of layers of the glass paste layers plus one;

[0031] The glass plate layer includes: a first metal layer, a glass plate single layer, and a second metal layer stacked in sequence; wherein the material of the first metal layer and the second metal layer is one or more of titanium, nickel, copper, or indium oxide, and the glass plate single layer is the rare earth silicate glass described in any of the above items.

[0032] In one embodiment, the glass substrate includes a plurality of via holes, and the maximum penetration depth of the plurality of via holes is equal to the sum of the thicknesses of the glass plate layer and the glass paste layer;

[0033] The diameter of the via hole is 0.03 mm-0.07 mm, and the distance between any two adjacent via holes is greater than or equal to 0.04 mm.

[0034] The present application also provides an application of a glass substrate, such as a glass substrate as described in any of the above items is applied to the packaging structure of an artificial intelligence computing chip, a photonic chip, a high-power solid laser chip, a 6G transmission chip, and a high-power radar chip.

[0035] The rare earth silicate glass provided in this application has the following beneficial effects:

[0036] 1. The rare earth silicate glass provided by the present application comprises components: silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, wherein the rare earth oxides include one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium. Among them, 99.5%≤(silicon dioxide+boron oxide+potassium oxide+aluminum oxide)≤99.9% by mass. The expansion coefficient of the rare earth silicate glass is close to that of a single crystal silicon wafer, the expansion curve is close to that of a single crystal silicon wafer, the chip damage caused by the difference in expansion coefficient can be avoided during use, the service life is extended, and the dielectric constant and dielectric loss are stable.

[0037] 2. The rare earth silicate glass formed by the preparation method of the rare earth silicate glass provided by the present application has an expansion coefficient close to that of a single crystal silicon wafer, an expansion curve close to that of a single crystal silicon wafer, can avoid chip damage caused by differences in expansion coefficients during use, extend service life, and has a stable dielectric constant and dielectric loss. The rare earth silicate glass prepared by the above method is more conducive to chip architecture engineers to create higher density and higher performance chip packaging, provides strong support for data-intensive chip production such as artificial intelligence, and is more suitable for application in high-power devices.

[0038] 3. The advantages of the rare earth silicate glass substrate provided by the present application over the PCB substrate are: high thermal conductivity, low signal loss, stable dielectric constant, fast signal transmission, 30% improvement in chip layout on equal-area substrates, expansion coefficient close to that of chip wafers, high reliability, high wiring density, 5 to 10 times increase in through-hole density, 30 times reduction in warpage, and a wider range of use environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0040] Figure 1 This is a test diagram of the expansion coefficient of the rare earth silicate glass provided in Example 2 of the present invention;

[0041] Figure 2 The dielectric loss test graph of the rare earth silicate glass provided in Examples 1-7 and Comparative Examples 8-9 of the present invention;

[0042] Figure 3 A schematic diagram of a glass substrate provided in an embodiment of the present invention.

[0043] Description of reference numerals:

[0044] Glass substrate 100 : glass plate layer 10 , first metal layer 11 , glass plate single layer 12 , second metal layer 13 , glass paste layer 20 , and via 40 . DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0048] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0049] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0050] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] The present application provides a rare earth silicate glass, which includes the following components, measured in percentage by mass: 77%≤silicon dioxide (SiO2)≤80%, 16%≤boron oxide (BO)≤20%, 1.5%≤potassium oxide (K2O)≤2.7%, 1.3%≤aluminum oxide (Al2O3)≤1.6%, and 0.05%<rare earth oxide≤0.5%.

[0052] Among them, 99.5%≤silicon dioxide+boron oxide+potassium oxide+aluminum oxide≤99.9%. That is, 99.5%≤(SiO2+B2O3+K2O+Al2O3) mass percentage≤99.9%

[0053] The rare earth oxide includes one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.

[0054] Tested under an environment of 20°C and 1MHz, the dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and the dielectric constant of the rare earth silicate glass does not fluctuate when the environment changes at 20°C±10°C. In addition, the rare earth silicate glass also has high thermal stability and high strength (see Table 1 below for details).

[0055] In one embodiment, the rare earth oxide in the rare earth silicate glass may be in any of the following forms:

[0056] The rare earth oxide is a mixture of cerium oxide and samarium oxide;

[0057] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0058] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0059] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide;

[0060] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide;

[0061] The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide;

[0062] The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide;

[0063] The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or,

[0064] The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

[0065] In one embodiment, in the raw materials of rare earth silicate glass, the concentration of metal impurities in the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide and the rare earth oxide is less than 10 ppm.

[0066] In this embodiment, the metal doping concentration of various substances in the raw materials of the rare earth silicate glass is specifically limited to be less than a certain value, which can ensure the purity of the rare earth silicate glass product and improve the performance of the rare earth silicate glass.

[0067] The present application also provides a method for preparing rare earth silicate glass, comprising:

[0068] S1, provide silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and mix them according to the mass percentage described in any of the above embodiments (can be mixed in a variety of ways) to form mixed particles. In this step, when mixing the above raw materials, a V mixing method can be adopted, and V mixing can achieve uniform mixing of the above five raw materials (powders or particles). In addition, the raw materials in S1 (silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxides) must not contain metal impurities or the content of metal impurities must be controlled. The specific control ratio is limited to the concentration of metal impurities in each raw material to be less than 10PPm.

[0069] S2, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1450°C to 1600°C is used for dissolution, and the melting and homogenization are carried out for 32 to 48 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, and the rare earth, thereby forming a preformed glass. The crucible used in this step can be a platinum crucible. In this step, high-temperature dissolution is used, and the high-temperature dissolution must be combined with a suitable homogenization time to ensure the uniformity of the preformed glass.

[0070] S3, placing the preformed glass into a forming container and rapidly cooling it within 2 minutes to form rare earth silicate glass. In this step, the rapid cooling can be performed by air cooling or water cooling, that is, rapidly cooling the preformed glass.

[0071] like Figure 1 As shown, the rare earth silicate glass formed by the above-mentioned preparation method of rare earth silicate glass has an expansion coefficient close to that of a single crystal silicon wafer, an expansion curve close to that of a single crystal silicon wafer, can avoid chip damage caused by differences in expansion coefficients during use, extend service life, and has a stable dielectric constant and dielectric loss. The rare earth silicate glass prepared by the above-mentioned method is more conducive to chip architecture engineers to create higher density and higher performance chip packaging, provides strong support for data-intensive chip production such as artificial intelligence, and is more suitable for application in high-power devices.

[0072] As shown in Table 1, the advantages of the rare earth silicate glass substrate provided by the present application compared with the PCB substrate are: high thermal conductivity, low signal loss, stable dielectric constant, fast signal transmission, 30% improvement in chip layout of equal-area substrate, expansion coefficient close to chip wafer, high reliability, high wiring density, through-hole density can be increased by 5 to 10 times, warpage is reduced by 30 times, and the range of use environment is wider.

[0073] Table 1: Performance comparison between PCB substrate and glass substrate

[0074]

[0075] The following provides seven examples (the rare earth silicate glass is formed by the preparation method of the present application) and two comparative examples (glass formed by the preparation method of the prior art).

[0076] Embodiment 1:

[0077] S11, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 77% silicon dioxide, 19.3% boron oxide, 2.3% potassium oxide, 1.3% aluminum oxide, and 0.1% rare earth oxide, and mixing them to form mixed particles. The rare earth oxide includes: a mixture of cerium oxide and samarium oxide.

[0078] S12, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1480°C±10°C is used for dissolution, and the melting and homogenization are carried out for 36 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide and the samarium oxide, thereby forming a preformed glass. Among them, the temperature is rapidly increased at a rate of 50°C / min below 800°C, the temperature is increased at a rate of 26°C / min between 800°C and 1300°C, the temperature is increased at a rate of 8.5°C / min above 1300°C, and the insulation temperature is controlled with an accuracy of ±5°C.

[0079] S13, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0080] The rare earth silicate glass prepared in Example 1 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.0005 (less than 0.0006), and the dielectric constant of the rare earth silicate glass did not fluctuate when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.02±0.15; the expansion coefficient at T=0-300°C was 3.3*10 -6 m / K; high temperature resistance>150℃, can reach 280℃.

[0081] Embodiment 2:

[0082] S21, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 77% silicon dioxide, 18.8% boron oxide, 2.5% potassium oxide, 1.6% aluminum oxide, and 0.1% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes: a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide.

[0083] S22, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1460°C ± 10°C is used for dissolution, and the melting and homogenization are carried out for 40 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the samarium oxide, the praseodymium oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the temperature is rapidly increased at a rate of 50°C / min below 800°C, the temperature is increased at a rate of 26°C / min between 800°C and 1300°C, the temperature is increased at a rate of 8.5°C / min above 1300°C, and the insulation temperature is controlled with an accuracy of ±5°C.

[0084] S23, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0085] The rare earth silicate glass prepared in Example 2 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.0003, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.1±0.15; the expansion coefficient at T=0-300°C was 3.5*10 -6 m / K; high temperature resistance>150℃, can reach 260℃.

[0086] Embodiment 3:

[0087] S31, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 78% silicon dioxide, 18% boron oxide, 2.3% potassium oxide, 1.4% aluminum oxide, and 0.3% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes: a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide.

[0088] S32, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1580℃±10℃ is adopted for the dissolution, and the melting and homogenization are carried out for 32 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the praseodymium oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the temperature is rapidly increased at a rate of 50℃ / min below 800℃, the temperature is increased at a rate of 26℃ / min between 800℃ and 1300℃, the temperature is increased at a rate of 8.5℃ / min above 1300℃, and the insulation temperature is controlled with an accuracy of ±5℃.

[0089] S33, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0090] The rare earth silicate glass prepared in Example 3 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.00007, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.07±0.15; the expansion coefficient at T=0-300°C was 4*10 -6 m / K; high temperature resistance>150℃, can reach 290℃.

[0091] Embodiment 4:

[0092] S41, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 77.5% silicon dioxide, 18.5% boron oxide, 2.1% potassium oxide, 1.5% aluminum oxide, and 0.4% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes: a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide.

[0093] S42, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1540°C ± 10°C is used for dissolution, and the melting and homogenization are carried out for 36 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the samarium oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the heating rate is 50°C / min below 800°C, the heating rate is 26°C / min between 800°C and 1300°C, the heating rate is 8.5°C / min above 1300°C, and the insulation temperature control accuracy is ±5°C.

[0094] S43, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0095] The rare earth silicate glass prepared in Example 4 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.00002, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.08±0.15; the expansion coefficient at T=0-300°C was 3.7*10 -6 m / K; high temperature resistance>150℃, can reach 240℃.

[0096] Embodiment 5:

[0097] S51, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 78.8% silicon dioxide, 17.8% boron oxide, 1.8% potassium oxide, 1.4% aluminum oxide, and 0.2% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes: a mixture of cerium oxide, samarium oxide and praseodymium oxide.

[0098] S52, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1500°C±10°C is adopted for the dissolution, and the melting and homogenization are carried out for 36 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the samarium oxide and the praseodymium oxide, thereby forming a preformed glass. The temperature below 800°C is rapidly increased at a rate of 50°C / min, the temperature between 800°C and 1300°C is increased at a rate of 26°C / min, the temperature above 1300°C is increased at a rate of 8.5°C / min, and the insulation temperature is controlled with an accuracy of ±5°C.

[0099] S53, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0100] The rare earth silicate glass prepared in Example 5 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.00001, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.03±0.15; the expansion coefficient at T=0-300°C was 3.6*10 -6 m / K; high temperature resistance>150℃, can reach 250℃.

[0101] Embodiment 6:

[0102] S61, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 79% silicon dioxide, 17.9% boron oxide, 1.7% potassium oxide, 1.3% aluminum oxide, and 0.1% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes dysprosium oxide and neodymium oxide.

[0103] S62, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1520℃±10℃ is adopted for the dissolution, and the melting and homogenization are carried out for 36 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the temperature is rapidly increased at a rate of 50℃ / min below 800℃, the temperature is increased at a rate of 26℃ / min between 800℃ and 1300℃, the temperature is increased at a rate of 8.5℃ / min above 1300℃, and the insulation temperature is controlled with an accuracy of ±5℃.

[0104] S63, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0105] The rare earth silicate glass prepared in Example 6 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.0001, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.08±0.15; the expansion coefficient at T=0-300°C was 3.8*10 -6 m / K; high temperature resistance>150℃, can reach 230℃.

[0106] Embodiment 7:

[0107] S71, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 79.7% silicon dioxide, 17% boron oxide, 1.5% potassium oxide, 1.6% aluminum oxide, and 0.2% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes cerium oxide, dysprosium oxide and neodymium oxide.

[0108] S72, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1480°C ± 10°C is used for dissolution, and the melting and homogenization are carried out for 37 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the temperature is rapidly increased at a rate of 50°C / min below 800°C, the temperature is increased at a rate of 26°C / min between 800°C and 1300°C, the temperature is increased at a rate of 8.5°C / min above 1300°C, and the insulation temperature is controlled with an accuracy of ±5°C.

[0109] S73, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0110] The rare earth silicate glass prepared in Example 7 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.0003, and there was no fluctuation in the dielectric constant of the rare earth silicate glass when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.16±0.15; the expansion coefficient at T=0-300°C was 4*10 -6 m / K; high temperature resistance>150℃, can reach 210℃.

[0111] Comparative Example 8:

[0112] S81, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 77% silicon dioxide, 26.5% boron oxide (not satisfying 16%≤boron oxide≤20%), 2.1% potassium oxide, 1.3% aluminum oxide, and 0.1% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes cerium oxide and samarium oxide.

[0113] S82, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1460°C ± 10°C is used for dissolution, and the mixture is melted and homogenized for 40 hours to form a preformed glass. The temperature below 800°C is rapidly increased at a rate of 50°C / min, the temperature between 800°C and 1300°C is increased at a rate of 26°C / min, the temperature above 1300°C is increased at a rate of 8.5°C / min, and the insulation temperature is controlled with an accuracy of ±5°C.

[0114] S83, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass (in the prior art).

[0115] The rare earth silicate glass prepared in Comparative Example 8 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.3, the dielectric loss was 0.01 (not less than 0.0006, see Table 1), and the dielectric constant of the rare earth silicate glass did not fluctuate when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.09±0.15; the expansion coefficient at T=0-300°C was 18*10 -6 m / K (not in the range of 2-10); high temperature resistance > 100℃, can reach 120℃ (not in the range of 150℃-300℃).

[0116] Comparative Example 9:

[0117] S91, providing raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and providing the following components in terms of mass percentage: 83% silicon dioxide (not in the range of 77% ≤ silicon dioxide ≤ 80%), 13.2% boron oxide (not in the range of 16% ≤ boron oxide ≤ 20%), 1.7% potassium oxide, 1.6% aluminum oxide, and 0.5% rare earth oxide; mixing to form mixed particles. The rare earth oxide includes: a mixture of cerium oxide, samarium oxide and praseodymium oxide.

[0118] S92, putting the mixed particles into a crucible for dissolution, wherein the high temperature of 1460°C ± 10°C is used for dissolution, and the mixture is melted and homogenized for 40 hours to form a preformed glass. The temperature below 800°C is rapidly increased at a rate of 50°C / min, the temperature between 800°C and 1300°C is increased at a rate of 26°C / min, the temperature above 1300°C is increased at a rate of 8.5°C / min, and the insulation temperature is controlled with an accuracy of ±5°C.

[0119] S93, placing the preformed glass into a forming container and performing extremely rapid cooling to form rare earth silicate glass.

[0120] The rare earth silicate glass prepared in Comparative Example 9 was tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass was 4.0, the dielectric loss was 0.002 (not less than 0.0006, see Table 1), and the dielectric constant of the rare earth silicate glass did not fluctuate when the environment changed at 20°C±10°C. The thermal conductivity of the rare earth silicate glass was 1.17±0.15 (not within the range of 0.8-1.2, see Table 1); the expansion coefficient at T=0-300°C was 15*10 -6 m / K (not in the range of 2-10, see Table 1); high temperature resistance>150℃, can reach 180℃.

[0121] The relevant performance parameters of the rare earth silicate glasses prepared in the above 7 embodiments and 2 comparative examples are shown in Table 2 below. It is obvious that the performance of the rare earth silicate glasses in Comparative Examples 8 and 9 is not good, mainly reflected in high dielectric loss and low signal transmission speed. Figure 2 , Figure 2 The dielectric loss test diagram of the rare earth silicate glass provided for Examples 1-7 of the present invention and Comparative Examples 8-9. Figure 2 It can be seen that the dielectric loss of the rare earth silicate glass provided in Examples 1-7 of the present invention at room temperature 20°C and 1 MHz is less than 0.0001. The dielectric loss of the rare earth silicate glass provided in Comparative Examples 8-9 is greater than 0.0001, which are 0.01 and 0.002 respectively.

[0122] Table 2: Performance comparison of rare earth silicate glass

[0123]

[0124] In addition, the rare earth silicate glass prepared by the above-mentioned method for preparing rare earth silicate glass (such as the rare earth silicate glass in the above-mentioned embodiments 1 to 7) has good performance: the density is 2.15±0.25g·cm -3, Young's modulus is 70.00GPa, and the thermal expansion coefficient is (3±0.5)*10 in the temperature range of 0-300℃ -6 m / K, the logarithmic volume resistivity at 250℃ is 12.3Ω*cm, the logarithmic volume resistivity at 350℃ is 9.9Ω*cm, the dielectric constant at room temperature 20℃ and 1MHz is 4.1, the loss at room temperature 20℃ and 1MHz is less than 0.0001, and the transmission signal speed is greater than 350GB.

[0125] The rare earth silicate glass substrate prepared by the preparation method of the rare earth silicate glass provided in this application replaces the traditional PCB substrate, which is more conducive to chip architecture engineers to create higher density and higher performance chip packaging, and provides strong support for data-intensive chip production such as artificial intelligence. In addition, the rare earth silicate glass substrate provided by this application has better performance in flatness, thermal stability and mechanical stability. Specifically, the rare earth silicate glass substrate provided by this application can significantly improve electrical and mechanical properties; the adjustable modulus and thermal expansion coefficient are closer to silicon, supporting chips with large dimensions; the substrate size fluctuates little under conditions of a large temperature range, and the stability is higher; the through-hole density can be increased by about 5 to 10 times, which improves routing and signals; reduces losses and increases signal transmission speed; supports advanced integrated power supply at higher temperatures.

[0126] See also Figure 3 , the present application also provides a glass substrate 100. The glass substrate may include one or more layers of rare earth silicate glass. When the glass substrate includes multiple layers of rare earth silicate glass, different layers of rare earth silicate glass may be bonded together by special glass paste. In one embodiment, the glass substrate 100 includes multiple glass plate layers 10 and glass paste layers 20 alternately stacked from bottom to top, wherein the number of layers of the glass plate layers 10 is equal to the number of layers of the glass paste layers 20 plus one. The glass plate layer 10 includes: a first metal layer 11, a glass plate single layer 12, and a second metal layer 13 stacked in sequence; wherein the materials of the first metal layer 11 and the second metal layer 13 are titanium, nickel, copper, or one or more of indium oxide, and the glass plate single layer 12 is the rare earth silicate glass described in any of the above embodiments. The melting point of the glass paste layer 20 is lower than the melting point of the glass plate layer 10. In one embodiment, the melting point of the glass paste layer 20 is in the range of 300°C to 500°C. The glass paste layer 20 is insulating. The softening temperature of the glass paste layer 20 is lower than the softening temperature of the glass plate single layer 12. The glass paste layer 20 serves to connect the upper and lower layers.

[0127] like Figure 3As shown, the glass substrate 100 includes, from top to bottom, a first metal layer 11, a glass plate single layer 12, a second metal layer 13, a glass paste layer 20, the first metal layer 11, the glass plate single layer 12, the second metal layer 13, the glass paste layer 20, the first metal layer 11, the glass plate single layer 12, the second metal layer 13, the glass paste layer 20, the first metal layer 11, the glass plate single layer 12, the second metal layer 13, the glass paste layer 20, the first metal layer 11, the glass plate single layer 12, and the second metal layer 13.

[0128] In this embodiment, a specific structure of a glass substrate 100 including 5 glass plate layers 10 and 4 glass paste layers 20 is illustrated. In this structure, the melting point of the glass paste layer 20 used is in the range of 300°C to 500°C, the glass paste layer 20 is insulating, the softening temperature of the glass paste layer 20 is lower than the softening temperature of the glass plate single layer 12, and the glass paste layer 20 plays a role in combining the upper and lower layers. Therefore, in this embodiment, the glass substrate 100 has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, each layer has a high bonding force, and the glass substrate 100 has good insulation and higher safety.

[0129] In one embodiment, the glass paste layer 20 includes a mixture of glass powder, an organic binder and water, wherein the content of the glass powder and the organic binder reaches 70%-85%. The glass powder is a micron-sized, low-melting-point glass powder for electronic paste.

[0130] The glass powder is prepared by the following steps:

[0131] S1, take 10% to 30% of boron trioxide, 5% to 15% of silicon dioxide, 55% to 70% of zinc oxide, 0% to 25% of vanadium pentoxide, 0% to 2% of antimony trioxide, and 0% to 2% of germanium dioxide by mass fraction, and mix them to obtain a mixture. In this step, the above raw materials are prepared according to the mass ratio of the above specific components, and the prepared raw materials are added to the ball mill and fully mixed. Before S1, it also includes the steps of pickling, strong magnetic adsorption to remove metal impurities, and ensuring that the metal ions are less than 10PPM.

[0132] S2. Heat and melt the mixture to obtain molten glass. In this step, the mixture powder prepared in S1 is poured into a crucible and placed in a high-temperature furnace under an air atmosphere to be heated to a liquid state. The heating temperature is 1300°C-1500°C and the mixture is kept warm for 24 to 72 hours for homogenization: the chemical composition of the molten glass tends to be uniform under high temperature for a long time to obtain molten glass. In a specific embodiment, the mixture powder prepared in S1 is poured into a crucible and placed in a high-temperature furnace under an air atmosphere to be heated to a liquid state. The heating temperature is 1450°C and the mixture is kept warm for 36 hours. The molten glass is continuously heated and a gaseous mixture is released. After 36 hours of homogenization, the chemical composition of the molten glass tends to be uniform.

[0133] S3, quenching the glass liquid with water to obtain a glass body. In this step, the molten glass body formed in S2 is poured into water and quenched to obtain glass slag.

[0134] S4, crushing the glass body to obtain the glass powder. Crushing and grinding the glass slag formed in S4 to obtain glass powder. The glass powder obtained in this step has a dielectric constant of about 4, an expansion coefficient close to that of silicon, and a loss of less than 0.0001 (@20°C, 1MHz).

[0135] S5, mixing the glass powder, organic binder and water in a certain proportion to obtain glass paste, wherein the content of the glass powder and the organic binder reaches 70%-85%.

[0136] The glass paste layer 20 is a glass paste comprising glass powder, an organic adhesive and water. The specific mixing ratio of the glass powder and water is adjustable according to the material and thickness of the glass layer to be bonded.

[0137] In this embodiment, the glass paste layer 20 is a glass paste comprising glass powder, an organic binder and water. The glass powder is prepared by a high-temperature melting-water quenching process. The glass paste layer 20 prepared by the glass powder has a low melting point, a low glass transition point, and high uniformity. The raw materials are inexpensive, the sources are abundant, the synthesis temperature is low, the process is simple, and it is conducive to industrial production.

[0138] The glass paste layer 20 in this embodiment has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, and has a high bonding strength with high borosilicate glass and microcrystalline glass. In addition, the glass paste layer 20 has good insulation and higher safety.

[0139] In one embodiment, the glass substrate 100 includes a plurality of via holes 40, and the maximum penetration depth of the plurality of via holes 40 is equal to the sum of the thicknesses of the glass plate layer 10 and the glass paste layer 20. The diameter of the via holes 40 is 0.03 mm-0.07 mm, and the spacing between any two adjacent via holes 40 is greater than or equal to 0.04 mm.

[0140] In this embodiment, the penetration depths of the plurality of via holes 40 in the same layer are the same, and the penetration depths of different layers are the same or different. The plurality of via holes 40 are used to form a circuit board with a special circuit layout. In this embodiment, the spacing between any two adjacent via holes 40 is greater than or equal to 0.04 mm. In one embodiment, the diameter of the via hole 40 is 0.05 mm. In one embodiment, the spacing between any two adjacent via holes 40 is 0.05 mm.

[0141] In this embodiment, the diameter and spacing of the via holes 40 provided make the circuit layout formed on the glass substrate 100 more stable.

[0142] The glass substrate involved in this application has a wide range of applications. The glass substrate described in any of the above items can be used in a variety of different semiconductor chip packaging structures to replace the existing PCB circuit board, so that the chip integration is greatly improved, the number of placements per unit area is greatly increased, and the transmission rate between chips is increased to more than 300G. For example, the glass substrate can be used in artificial intelligence computing chips, photonic chips, high-power solid laser chips, 6G transmission chips, and high-power radar chips.

[0143] The main difference between glass substrates and traditional organic PCB substrates is that both glass and silicon are made of silicon, so they deform to a similar degree due to heat, and are harder and less prone to deformation than organic packages, so it is easier to pass more wires through rare earth silicate glass; and it is easier to process at higher processing temperatures; it is easier to build finer pitch wiring, and it can support circuit boards up to 200mm×200mm. In addition, the signal transmission speed of the glass substrate made of rare earth silicate glass involved in this application can be as high as 400GB, and the dielectric constant can be lower than the dielectric constant of organic packages. The glass substrate made of rare earth silicate glass involved in this application can package a series of chiplets together through internal interconnection technology. In addition, the superior mechanical, physical and optical properties of the glass substrate made of rare earth silicate glass involved in this application allow more transistors to be connected in one package, while improving power delivery and transmitting signals faster. This also enables chip architects to package more chiplets in one package, while achieving performance, density, flexibility, and cost and power consumption reduction. The glass substrate technology made of rare earth silicate glass involved in this application can increase the chip area in a single package by 30% to 50%, so that more chiplets can be placed. The glass substrate made of rare earth silicate glass provided in the embodiment of this application has low high-frequency dielectric loss, and can achieve a loss of less than 0.006 under 100G conditions, and can be used under high temperature conditions above 150°C.

[0144] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A rare earth silicate glass, characterized in that: According to the percentage by mass, it includes the following components: 77%≤silicon dioxide≤80%, 16%≤boron oxide≤20%, 1.5%≤potassium oxide≤2.7%, 1.3%≤aluminum oxide≤1.6%, and 0.05%<rare earth oxide≤0.5%; Among them, 99.5%≤silicon dioxide+boron oxide+potassium oxide+aluminum oxide≤99.9%; The rare earth oxides include one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium; When tested under an environment of 20° C. and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.1, and the dielectric loss is less than 0.0006. Furthermore, when the environment changes at 20° C.±10° C., the dielectric constant of the rare earth silicate glass does not fluctuate.

2. The rare earth silicate glass according to claim 1, characterized in that: The rare earth oxide is a mixture of cerium oxide and samarium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or, The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

3. The rare earth silicate glass according to claim 1, characterized in that: The concentration of metal impurities in the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide and the rare earth oxide is less than 100 ppm.

4. A method for preparing rare earth silicate glass, characterized in that: include: S1, providing silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and mixing them according to the mass percentage content of any one of claims 1 to 3 to form mixed particles; S2, placing the mixed particles into a crucible for dissolution, wherein the high temperature of 1450° C. to 1600° C. is used for melting and homogenization for 32 to 48 hours, and the glass liquid is injected into room temperature distilled water within 2 minutes for cooling to form a preformed glass, and then the glass is crushed into a preformed glass powder of 1 to 3 microns; S3, placing the preformed glass powder into a forming container and heating it to form rare earth silicate glass; The rare earth silicate glass formed by the above preparation method is tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and the dielectric constant of the rare earth silicate glass does not fluctuate when the environment changes at 20°C±10°C.

5. The method for preparing rare earth silicate glass according to claim 4, characterized in that: The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide; In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1460°C±10°C at a heating rate of 50°C / min, and maintained at 1460°C±10°C for 40 hours, so that chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

6. The method for preparing rare earth silicate glass according to claim 4, characterized in that: The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide; In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1580°C±10°C at a heating rate of 100°C / min, and maintained at 1580°C±10°C for 32 hours; special chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

7. The method for preparing rare earth silicate glass according to claim 4, characterized in that: In S3, the preformed glass may be rolled into a glass sheet by rolling the preformed glass.

8. A glass substrate, characterized in that: A plurality of glass plate layers (10) and glass paste layers (20) alternately stacked in sequence from bottom to top, wherein the number of the glass plate layers (10) is equal to the number of the glass paste layers (20) plus one; The glass plate layer (10) comprises: a first metal layer (11), a glass plate single layer (12) and a second metal layer (13) which are stacked in sequence; wherein the material of the first metal layer (11) and the second metal layer (13) is one or more of titanium, nickel, copper, or indium oxide, and the glass plate single layer (12) is the rare earth silicate glass described in any one of claims 1 to 7.

9. The glass substrate according to claim 8, wherein: The glass substrate (100) comprises a plurality of via holes (40), and the maximum penetration depth of the plurality of via holes (40) is equal to the sum of the thicknesses of the glass plate layer (10) and the glass paste layer (20); The diameter of the conducting hole (40) is 0.03 mm-0.07 mm, and the distance between any two adjacent conducting holes (40) is greater than or equal to 0.04 mm.

10. An application of a glass substrate, characterized in that: The glass substrate as described in claim 8 or 9 is applied to the packaging structure of artificial intelligence computing chips, photonic chips, high-power solid laser chips, 6G transmission chips, and high-power radar chips.

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