True random number generator and random number generation method based on magnetic tunnel junction device

Abstract

The invention provides a true random number generator based on a magnetic tunnel junction device and a random number generation method. The true random number generator provided by the invention comprises a control circuit, a magnetic tunnel junction device and a random number generator, the control circuit is used for providing a plurality of continuous voltage pulse signals for the magnetic tunnel junction device, so that the resistance of the magnetic tunnel junction device oscillates; the plurality of continuous voltage pulse signals correspond to different flip probabilities of the magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals cooperatively act on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates the flip probabilities based on in-memory calculation, so that the final flip probability after accumulation tends to be a half-and-half probability; and the random number generator is used for generating a random number according to the resistance state of the magnetic tunnel junction device after the plurality of continuous voltage pulse signals are applied. According to the true random number generator based on the magnetic tunnel junction device and the random number generation method provided by the invention, random numbers with high randomness and uniform distribution can be generated.

Description

Technical Field

[0001] The present application relates to the technical field of random number generators, and in particular to a true random number generator based on a magnetic tunnel junction device and a random number generation method. Background Art

[0002] Random numbers are needed in cryptography, computer simulation, statistical analysis and other fields. Random number generators, as a device that can generate random numbers, are widely used in cryptography, computer simulation, statistical analysis and other fields.

[0003] For a true random number generator based on a magnetic tunnel junction device, the closer the flip probability of the magnetic tunnel junction device is to 50%, the more random and uniformly distributed the random numbers it generates are. In order to ensure that the flip probability is close to 50%, a traditional true random number generator generates random numbers when the device reaches a metastable state and the oscillation drops to a very low level. However, when there is a magnetic field in the environment or an offset magnetic field in the device, when the device reaches a metastable state, its corresponding flip probability will shift by 50%, which will destroy the randomness and uniformity of the random numbers. Summary of the invention

[0004] In view of this, the present application provides a true random number generator and a random number generation method based on a magnetic tunnel junction device, so as to generate random numbers with high randomness and uniform distribution.

[0005] Specifically, the present application is implemented through the following technical solutions: In a first aspect, the present application provides a true random number generator based on a magnetic tunnel junction device, the true random number generator comprising a control circuit, a magnetic tunnel junction device and a random number generator; wherein: The control circuit is used to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device so as to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-probability; The random number generator is used to generate a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

[0006] The second aspect of the present application provides a random number generation method, which is implemented based on the true random number generator based on the magnetic tunnel junction device provided in the first aspect of the present application, and the random number generation method includes: A plurality of continuous voltage pulse signals are provided and applied to a magnetic tunnel junction device so as to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-probability; A random number is generated according to the resistance state of the magnetic tunnel junction device after the application of the multiple continuous voltage pulse signals is completed.

[0007] The present application provides a true random number generator and a random number generation method based on a magnetic tunnel junction device. By setting a controller, a magnetic tunnel junction device and a random number generator, a control circuit is made to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device, so that the random number generator generates a random number according to the resistance state of the magnetic tunnel junction device after the plurality of continuous voltage pulse signals are applied. Since the voltage amplitude and pulse width of the plurality of voltage pulse signals are within a preset range, and the plurality of voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, based on the characteristics of the magnetic tunnel junction device, after the plurality of continuous voltage pulse signals act in coordination on the magnetic tunnel junction device, the flipping probability corresponding to each voltage pulse signal will be accumulated in an XOR form through in-memory calculation. Since the plurality of voltage pulse signals correspond to different flipping probabilities, the plurality of continuous voltage pulse signals act in coordination to counteract the problem of flipping probability drift, so that the final flipping probability of the magnetic tunnel junction device after accumulation tends to be half-probability, so as to improve the randomness and uniformity of the random numbers generated by the true random number generator. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A graph showing the relationship between the flip probability of a magnetic tunnel junction device and the pulse width according to an exemplary embodiment of the present application; Figure 2 A schematic diagram of a first embodiment of a true random number generator based on a magnetic tunnel junction device provided in the present application; Figure 3 A waveform diagram of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application; Figure 4 This is a flowchart of Example 1 of the random number generation method provided in this application.

[0009] Description of reference numerals: 1: Control circuit; 2: Magnetic tunnel junction device; 3: Random number generator. DETAILED DESCRIPTION

[0010] Here, exemplary embodiments are described in detail, and examples thereof are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application.

[0011] The terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in this article refers to and includes any or all possible combinations of one or more associated listed items.

[0012] It should be understood that although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0013] Figure 1 This is a graph showing the relationship between the flip probability of a magnetic tunnel junction device and the pulse width according to an exemplary embodiment of the present application. Figure 1 ,It is understandable that the flip probability of the ,magnetic tunnel junction device oscillates as the pulse width changes, and enters a metastable state when the pulse width increases to a ,certain value.

[0014] In a true random number generator based on a magnetic tunnel junction device, since random numbers are unpredictable and uniformly distributed, when the flip probability of the magnetic tunnel junction device is close to 50%, it means that in a large number of samples, the frequency of occurrence of the generated random numbers at different values ​​is similar, that is, the unpredictability and uniform distribution of the random numbers generated by the true random number generator are better. Figure 1 In order to ensure the randomness and uniformity of the generated random numbers, traditional true random number generators often generate random numbers when the magnetic tunnel junction device is in a metastable state and the oscillation has dropped to a very low level. However, the influence of the magnetic field in the environment can cause the flip probability of the magnetic tunnel junction device to drift and deviate from 50%, destroying the randomness and uniformity of the random numbers generated by the true random number generator.

[0015] The true random number generator based on the magnetic tunnel junction device provided by the present application uses multiple continuous voltage pulse signals to generate random numbers, and accumulates them in the form of XOR through in-memory calculation to obtain the final flip probability, so that after the multiple continuous voltage pulse signals act, the final flip probability of the magnetic tunnel junction device after accumulation is close to 50%. In addition, in this case, there is no need to use long pulses, and multiple continuous short pulses can be accumulated to act on the magnetic tunnel junction device. Since short pulses only need to provide energy in a short time, compared with long pulses, they have stronger anti-interference and lower power consumption, which is conducive to improving the durability of the device.

[0016] Specific embodiments are given below to introduce the technical solution of the present application in detail.

[0017] Figure 2 This is a schematic diagram of a first embodiment of a true random number generator based on a magnetic tunnel junction device provided in this application. Figure 2 The true random number generator provided in this embodiment includes a control circuit 1, a magnetic tunnel junction device 2 and a random number generator 3; wherein, The control circuit 1 is used to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device 2 so as to cause the resistance of the magnetic tunnel junction device 2 to oscillate; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device 2, the magnetic tunnel junction device 2 accumulates the flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-probability; The random number generator 3 is used to generate a random number according to the resistance state of the magnetic tunnel junction device 2 after the multiple continuous voltage pulse signals are applied.

[0018] Specifically, the control circuit 1 is used to generate a plurality of continuous voltage pulse signals, and control the application time, application sequence and duration of the plurality of continuous voltage pulse signals, so as to apply the plurality of continuous voltage pulse signals to the magnetic tunnel junction device 2 .

[0019] It can be understood that the magnetic tunnel junction device 2 is a sandwich structure consisting of two magnetic metal layers sandwiching an insulating layer. For the specific structure of the magnetic tunnel junction device 2, please refer to the description in the relevant technology, which will not be repeated here. In addition, the magnetic tunnel junction device 2 is a voltage-controlled magnetic tunnel junction device, that is, the magnetic tunnel junction device 2 is a voltage-controlled magnetic tunnel junction device.

[0020] It should be noted that the resistance value of the magnetic tunnel junction device 2 depends on the relative relationship between the magnetization directions of the two magnetic metal layers. When the magnetization directions of the two magnetic metal layers are parallel, the magnetic tunnel junction device 2 presents a low resistance state (recorded as the first state); when the magnetization directions of the two magnetic metal layers are antiparallel, the magnetic tunnel junction device 2 presents a high resistance state (recorded as the second state). Therefore, the voltage pulse signal can achieve the purpose of changing the resistance value of the magnetic tunnel junction device 2 by changing the magnetization direction of the magnetic metal layer.

[0021] It should be noted that the flip probability of the magnetic tunnel junction device 2 refers to the probability of the magnetic tunnel junction device 2 switching from one state to another state. It can be understood that the flip probability of the magnetic tunnel junction device 2 affects the randomness and uniformity of the random numbers generated by the true random number generator. The closer the flip probability of the magnetic tunnel junction device 2 is to 50%, the better the randomness and uniformity of the random numbers generated by the true random number generator.

[0022] It should be noted that the pulse width and voltage amplitude of the voltage pulse signal applied to the magnetic tunnel junction device 2 affect the flip probability of the magnetic tunnel junction device 2. The flip probability of a magnetic tunnel junction device 2 corresponding to a voltage pulse signal refers to the flip probability of the magnetic tunnel junction device 2 when the voltage pulse signal is applied to the magnetic tunnel junction device 2.

[0023] Please continue to refer to Figure 1 It can be understood that the flipping probabilities corresponding to different pulse widths may be the same or different, and a voltage pulse signal with a specific pulse width corresponds to a flipping probability of the magnetic tunnel junction device 2. In addition, the flipping probabilities corresponding to different voltage amplitudes are also different, and a voltage pulse signal with a specific voltage amplitude corresponds to a flipping probability of the magnetic tunnel junction device 2.

[0024] The true random number generator provided in this embodiment has a voltage amplitude and a pulse width of a plurality of continuous voltage pulse signals applied to a magnetic tunnel junction device within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on in-memory calculations, so that the final flipping probability after accumulation tends to a half-and-half probability; It should be noted that the preset range is set according to actual needs and is not limited in this embodiment. For example, in a possible implementation, the preset range corresponding to the voltage amplitude is 0.8V to 2V, and the preset range corresponding to the pulse width is 2.5ns to 15ns.

[0025] It can be understood that at least two voltage pulse signals among the multiple continuous voltage pulse signals may have different pulse widths and / or different voltage amplitudes, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

[0026] Furthermore, based on the characteristics of the voltage-controlled magnetic tunnel junction device, when multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the final accumulated flipping probability of the magnetic tunnel junction device 2 is the flipping probability after the multiple flipping probabilities corresponding to the multiple continuous voltage pulse signals are accumulated in the form of XOR (exclusive OR) through in-memory calculation.

[0027] For the sake of convenience, after the voltage pulse signal acts on the magnetic tunnel junction device 2, the probability of the magnetic tunnel junction device flipping is recorded as the flipping probability corresponding to the voltage pulse signal, and the difference between 1 and the flipping probability is the non-flipping probability corresponding to the voltage signal.

[0028] The final probability after accumulation is explained below. For example, in one embodiment, the control circuit 1 provides and applies two continuous voltage pulse signals to the magnetic tunnel junction device 2, which are respectively recorded as the first voltage pulse signal and the second voltage pulse signal, wherein the flip probability corresponding to the first voltage pulse signal is A, and the corresponding non-flip probability is B (B=1-A); the flip probability corresponding to the second voltage pulse signal is D, and the non-flip probability is E (1-D), then, the final flip probability after accumulation in the form of XOR is the product of the flip probability corresponding to the first voltage pulse signal and the non-flip probability corresponding to the second voltage pulse signal and the product of the non-flip probability corresponding to the first voltage pulse signal and the flip probability corresponding to the second voltage pulse signal, that is, the final flip probability after accumulation can be calculated according to the following formula: ; Where C is the final flip probability after accumulation of magnetic tunnel junction devices; A is the flip probability corresponding to the first voltage pulse signal; B is the non-flip probability corresponding to the first voltage pulse signal; D is the flip probability corresponding to the second voltage pulse signal; E is the non-reversal probability corresponding to the second voltage pulse signal.

[0029] It should be noted that when the number of voltage pulse signals included in multiple continuous voltage pulse signals is greater than two, the flipping probability after the accumulation of the first two pulse signals can be calculated first, and then the accumulated flipping probability can be used as the flipping probability corresponding to a voltage pulse signal, and the flipping probability after the accumulation of the voltage pulse signal and the subsequent voltage pulse signal can be further calculated, until all the voltage pulse signals are accumulated and processed, and the final flipping probability after the accumulation of multiple continuous voltage pulse signals is obtained.

[0030] It can be understood that the flip probability and non-flip probability corresponding to the first voltage pulse signal and the second voltage pulse signal are jointly represented by 0.5 and the flip error, and the calculation process of the final flip probability after the accumulation of two consecutive voltage pulse signals is shown in Table 1: Table 1

[0031] Please refer to Table 1. It can be understood that if the flip errors of multiple continuous voltage pulse signals are e1…en respectively, after the multiple continuous voltage pulse signals are applied, the flip error of the final flip probability after accumulation is less than min (e1…en); wherein the flip error is the difference between the flip probability and 50%. In summary, for a true random number generator, if the randomness and uniformity of the generated random numbers are to be good, the parameters of the multiple continuous voltage pulse signals output by the control circuit 1 are crucial. The following is a detailed description of the multiple continuous circuit voltage pulse signals.

[0032] Optionally, in a possible implementation, at least two of the multiple continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2; or, at least two of the multiple continuous voltage pulse signals have pulse widths corresponding to different flipping probabilities of the magnetic tunnel junction device 2; or at least two of the multiple continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2.

[0033] It should be noted that by making at least two of the multiple continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2, or making at least two of the multiple continuous voltage pulse signals have pulse widths corresponding to different flipping probabilities of the magnetic tunnel junction device 2, or making at least two of the multiple continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device 2, in this way, by making the voltage amplitudes and / or pulse widths of the multiple continuous voltage pulse signals different, the magnetic tunnel junction device 2 can have different flipping probabilities under the action of different voltage pulse signals, so that the final flipping probability after accumulation tends to a half-probability, thereby increasing the randomness and uniformity of the random numbers generated by the true random number generator.

[0034] Optional, Figure 3 This is a waveform diagram of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application. Please refer to Figure 3 ,exist Figure 3 In the example shown in part A of the figure, the voltage amplitudes of the multiple continuous voltage pulse signals are the same, the pulse widths are different, and the pulse widths of the multiple continuous voltage pulse signals gradually increase so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2.

[0035] In specific implementation, when multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the voltage amplitudes of the multiple continuous voltage pulse signals can be kept the same, and the pulse width of the voltage pulse signal can be gradually increased according to a preset pulse width increment, so as to obtain multiple continuous voltage pulse signals. The multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2 due to their different pulse widths.

[0036] It should be noted that the preset pulse width increment is set according to actual needs and is not limited in this embodiment.

[0037] In specific implementation, for example, in one embodiment, Table 2 is a parameter table of multiple continuous voltage pulse signals shown in an exemplary embodiment of the present application: Table 2

[0038] Please refer to Table 2. The magnetic tunnel junction device 2 is initially in the first state. The voltage amplitude of multiple continuous voltage pulse signals is controlled at 1V. The preset pulse width increment is 0.1, that is, the pulse width increases by 0.1 each time to obtain multiple continuous voltage pulse signals. Further, after the multiple continuous voltage pulse signals are sequentially applied to the magnetic tunnel junction device 2, the final flipping probability of the magnetic tunnel junction device 2 after accumulation based on the memory calculation is shown in Table 2. It can be seen that after the action of these four continuous voltage pulse signals, the final accumulated flipping probability of the magnetic tunnel junction device 2 is 51.2%, which tends to the half-and-half probability of 50%.

[0039] Furthermore, when the magnetic tunnel junction device is initially in the second state, the final flip probability after the action of multiple continuous voltage pulse signals is as shown in Table 3: Table 3

[0040] Please refer to Table 3. When the magnetic tunnel junction device 2 is initially in the second state, the voltage amplitude of the multiple continuous voltage pulse signals is controlled at 1V, and the preset pulse width increment is 0.1, that is, the pulse width increases by 0.1 each time, and multiple continuous voltage pulse signals are obtained. Further, after the multiple continuous voltage pulse signals are sequentially applied to the magnetic tunnel junction device 2, after these four continuous voltage pulse signals are applied, the final flip probability of the magnetic tunnel junction device 2 after the accumulation based on the memory calculation is 50.6%, which tends to the half-and-half probability of 50%.

[0041] Please continue to refer to Figure 1 It should be noted that when the magnetic tunnel junction device 2 is in different states, the change curves of the flip probability and the pulse width may be the same or different, that is, when the magnetic tunnel junction device 2 is in different states, when the same voltage pulse signal acts on the magnetic tunnel junction device 2, the probability of the magnetic tunnel junction device 2 flipping may be the same or different. Referring to Table 2 and Table 3, when multiple continuous voltage pulse signals act on the magnetic tunnel junction device 2, no matter whether the magnetic tunnel junction device 2 is initially in the first state or the second state, the final accumulated flip probability can be made to tend to a half-probability of 50%, so as to improve the randomness and uniformity of the random numbers generated by the true random number generator.

[0042] Optional, in Figure 3 In the example shown in part B, the pulse widths of the multiple continuous voltage pulse signals are the same, the voltage amplitudes of the multiple continuous voltage pulse signals are different, and the voltage amplitudes of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device 2.

[0043] Specifically, in a possible implementation, when applying multiple continuous voltage pulse signals to the magnetic tunnel junction device 2, the pulse widths of the multiple continuous voltage pulse signals can be kept the same, and further, the voltage amplitude of the voltage pulse signal is gradually increased according to a preset voltage amplitude increment, so as to obtain multiple continuous voltage pulse signals. The voltage amplitudes of the multiple continuous voltage pulse signals are different, corresponding to different flip probabilities of the magnetic tunnel junction device 2.

[0044] It should be noted that the preset voltage amplitude increment is set according to actual needs and is not limited in this embodiment.

[0045] In specific implementation, for example, in one embodiment, Table 4 is a parameter table of multiple continuous voltage pulse signals shown in another exemplary embodiment of the present application: Table 4

[0046] Please refer to Table 4. In the specific implementation, the pulse width of multiple continuous voltage pulse signals is controlled at 0.5n, and the preset voltage amplitude increment is set to 0.2, that is, the voltage amplitude increases by 0.2 each time, to obtain multiple continuous voltage pulse signals. Further, after the multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the final flip probability of the magnetic tunnel junction device 2 after the accumulation based on the internal calculation is 47.1%, which tends to the half-and-half probability of 50%.

[0047] Optional, see Figure 3 ,exist Figure 3 In the example shown in part C of , the pulse widths and voltage amplitudes of multiple continuous voltage pulse signals are different. It should be noted that when the pulse widths and voltage amplitudes are different, the pulse widths and voltage amplitudes can be gradually increased according to a preset increment, or can be completely randomly changed, and this embodiment is not limited thereto.

[0048] In specific implementation, for example, in one embodiment, Table 5 is a parameter table of multiple continuous voltage pulse signals shown in another exemplary embodiment of the present application: Table 5

[0049] Please refer to Table 5. In the specific implementation, by making the voltage amplitudes or pulse widths of multiple continuous voltage pulse signals different, each voltage pulse signal can correspond to a different flipping probability of the magnetic tunnel junction device 2, so as to combat the flipping probability drift problem, so that the final flipping probability after the accumulation of multiple continuous voltage pulse signals can approach a half probability of 50%.

[0050] Optional, please continue to refer to Figure 1, at least one voltage pulse signal among the multiple continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to a target flip probability; wherein the target flip probability tends to the half-and-half probability.

[0051] Specifically, at least one of the plurality of continuous voltage pulse signals has a voltage amplitude and / or pulse width corresponding to a target flip probability, and the target flip probability tends to be half probability. For example, in one embodiment, the target flip probability ranges from 45% to 55%.

[0052] Optionally, a specified number of voltage pulse signals among the multiple continuous voltage pulse signals specifically have a voltage amplitude and / or pulse width corresponding to a specified flip probability interval of the magnetic tunnel junction device 2; wherein the specified flip probability interval is 10% to 90%.

[0053] Preferably, the specified flip probability interval is 30% to 70%. It should be noted that the specific number of the specified number of voltage pulse signals in the plurality of continuous voltage pulse signals is set according to actual needs and is not limited in this embodiment.

[0054] Specifically, the random number generator 3 is a device capable of generating random numbers. The random number generator 3 can detect the resistance state of the magnetic tunnel junction device 2 after a plurality of continuous voltage pulse signals are applied, and then generate a random number according to the resistance state.

[0055] It should be noted that due to the uncertainty of the effect of the voltage pulse signal, when multiple continuous voltage pulse signals are applied to the magnetic tunnel junction device 2, the resistance state of the magnetic tunnel junction device 2 is also uncertain. The random number generator 3 can use the uncertainty of the resistance state of the magnetic tunnel junction device 2 to generate random numbers.

[0056] In a specific implementation, for example, in one embodiment, the high resistance state of the magnetic tunnel junction device 2 corresponds to the number "1", and the low resistance state of the magnetic tunnel junction device 2 corresponds to the number "0". After detecting the resistance state of the magnetic tunnel junction device after multiple continuous voltage pulse signals are applied, the random number generator 3 generates a corresponding random number.

[0057] The true random number generator provided in this embodiment is provided with a controller, a magnetic tunnel junction device and a random number generator, and the control circuit is made to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device, so that the random number generator generates a random number according to the resistance state of the magnetic tunnel junction device after the plurality of continuous voltage pulse signals are applied. Since the voltage amplitude and pulse width of the plurality of voltage pulse signals are within a preset range, and the plurality of voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, based on the characteristics of the magnetic tunnel junction device, after the plurality of continuous voltage pulse signals act in coordination on the magnetic tunnel junction device, the flipping summary corresponding to each voltage pulse signal will be accumulated in an XOR form. Since the plurality of voltage pulse signals correspond to different flipping probabilities, the plurality of continuous voltage pulse signals act in coordination to counteract the flipping probability drift problem, so that the final flipping probability of the magnetic tunnel junction device after the accumulation based on the in-memory calculation tends to the expected value, so as to improve the randomness and uniformity of the random numbers generated by the true random number generator.

[0058] Optional, see Figure 1 and Figure 2 In one possible implementation, the pulse widths of the multiple continuous voltage pulse signals are within a preset first range; wherein the upper limit value of the first range is less than or equal to a stable pulse width; and the stable pulse width is a pulse width when the flipping probability of the magnetic tunnel junction device 2 reaches an expected stable state.

[0059] Please refer to Figure 1 The flip probability of the magnetic tunnel junction device 2 oscillates as the pulse width continues to increase, and reaches an expected stable state when the pulse width increases to a certain value. The pulse width when the flip probability reaches the expected stable state is recorded as the stable pulse width.

[0060] In this embodiment, the pulse widths of the plurality of continuous voltage pulse signals are set within a preset first range, and an upper limit value of the first range is set to be less than or equal to a stable pulse width.

[0061] It should be noted that the specific value of the first range is set according to actual needs and is not limited in this embodiment. For example, in one embodiment, the first range of the pulse width of the plurality of continuous voltage pulse signals is 0-15ns.

[0062] Referring to the previous description, it can be understood that, through the synergistic effect of multiple continuous voltage pulse signals corresponding to different flipping probabilities, the final flipping probability after accumulation can be made to tend to 50% probability. At this time, since the final flipping probability after accumulation is close to 50%, there is no need to pay attention to the flipping probability corresponding to each pulse signal itself, and there is no need to generate random numbers when the magnetic tunnel junction device 2 is in a metastable state and the oscillation drops to a very low level. The pulse width of each pulse signal can be made less than or equal to the stable pulse width, that is, by applying multiple short pulses, unpredictable and uniformly distributed random numbers are generated.

[0063] Compared with the traditional true random number generator, the true random number generator provided in this embodiment significantly reduces the pulse width, converts the long pulse into a short pulse, and can exert influence on the magnetic tunnel junction device in a shorter time, making it easier for its magnetization state to change randomly, further improving the randomness of the generated random number. At the same time, the short pulse means that energy only needs to be provided in a short time, which has lower power consumption than the long pulse and can improve the durability of the device.

[0064] Corresponding to the aforementioned embodiment of a true random number generator based on a magnetic tunnel junction device, the present application also provides an embodiment of a random number generation method.

[0065] Figure 4 This is a flowchart of the first embodiment of the random number generation method provided by this application. Please refer to Figure 4 The random number generation method provided in this embodiment is implemented based on the true random number generator based on the magnetic tunnel junction device provided in this application, and the random number generation method includes: S101. Provide and apply a plurality of continuous voltage pulse signals to a voltage-controlled magnetic tunnel junction device so that the resistance of the magnetic tunnel junction device oscillates; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device, so that after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates the flipping probabilities based on in-memory calculations, so that the final flipping probability after accumulation tends to a half-and-half probability.

[0066] S102 , generating a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

[0067] The specific implementation principle and implementation process of the method provided in this embodiment are similar to the implementation principle of the aforementioned true random number generator, and will not be repeated here.

[0068] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A true random number generator based on a magnetic tunnel junction device, characterized in that: The true random number generator comprises a control circuit, a magnetic tunnel junction device and a random number generator; wherein, The control circuit is used to provide and apply a plurality of continuous voltage pulse signals to the magnetic tunnel junction device so as to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-probability; The random number generator is used to generate a random number according to the resistance state of the magnetic tunnel junction device after the multiple continuous voltage pulse signals are applied.

2. The true random number generator according to claim 1, characterized in that: The pulse widths of the multiple continuous voltage pulse signals are within a preset first range; wherein the upper limit value of the first range is less than or equal to a stable pulse width; and the stable pulse width is a pulse width when the flip probability of the magnetic tunnel junction device reaches an expected stable state.

3. The true random number generator according to claim 1, characterized in that: At least one voltage pulse signal among the plurality of continuous voltage pulse signals has a voltage amplitude and / or a pulse width corresponding to a target flip probability; wherein the target flip probability approaches the half-and-half probability.

4. The true random number generator according to claim 1, characterized in that: A specified number of voltage pulse signals among the multiple continuous voltage pulse signals have voltage amplitudes and / or pulse widths corresponding to a specified flip probability interval of the magnetic tunnel junction device; wherein the specified flip probability interval is 10% to 90%.

5. The true random number generator according to claim 1, characterized in that: At least two voltage pulse signals among the plurality of continuous voltage pulse signals have voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device.

6. The true random number generator according to claim 1, characterized in that: At least two voltage pulse signals among the plurality of continuous voltage pulse signals have pulse widths corresponding to different flipping probabilities of the magnetic tunnel junction device.

7. The true random number generator according to claim 1, characterized in that: At least two voltage pulse signals among the plurality of continuous voltage pulse signals have pulse widths and voltage amplitudes corresponding to different flipping probabilities of the magnetic tunnel junction device.

8. The true random number generator according to claim 1, characterized in that: The voltage amplitudes of the multiple continuous voltage pulse signals are the same, the pulse widths of the multiple continuous voltage pulse signals are different, and the pulse widths of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

9. The true random number generator according to claim 1, characterized in that: The pulse widths of the multiple continuous voltage pulse signals are the same, the voltage amplitudes of the multiple continuous voltage pulse signals are different, and the voltage amplitudes of the multiple continuous voltage pulse signals gradually increase, so that the multiple continuous voltage pulse signals correspond to different flipping probabilities of the magnetic tunnel junction device.

10. A random number generation method, characterized in that: The random number generation method is implemented based on the true random number generator based on the magnetic tunnel junction device according to any one of claims 1 to 9, and the random number generation method comprises: A plurality of continuous voltage pulse signals are provided and applied to a magnetic tunnel junction device so as to cause the resistance of the magnetic tunnel junction device to oscillate; wherein the voltage amplitude and pulse width of the plurality of continuous voltage pulse signals are within a preset range; the plurality of continuous voltage pulse signals correspond to different flipping probabilities of the voltage-controlled magnetic tunnel junction device, and after the plurality of continuous voltage pulse signals act synergistically on the magnetic tunnel junction device, the magnetic tunnel junction device accumulates flipping probabilities based on in-memory calculations so that the final flipping probability after accumulation tends to be half-probability; A random number is generated according to the resistance state of the magnetic tunnel junction device after the application of the multiple continuous voltage pulse signals is completed.

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