Sensor monocrystalline silicon etching equipment

Abstract

The invention relates to the technical field of etching equipment, and discloses etching equipment for sensor monocrystalline silicon, which comprises a base, a cabin is arranged on the upper side of the base, an air inlet pipe and an air outlet pipe are fixedly connected to the upper wall of the cabin, square plates are arranged on the base, vertical strips are arranged on the square plates, and a plurality of square plates are fixedly mounted on the vertical strips. A monocrystalline silicon wafer needing to be processed is placed on each circular plate, then each circular plate is inserted above each supporting plate, then the circular plates and the limiting rings can be moved downwards, so that the monocrystalline silicon wafer can be placed on the supporting plates, meanwhile, the limiting rings can be connected to the corresponding supporting plates in a sleeving mode, and then the movable strips are rotated and moved; and after the reaction of the monocrystalline silicon wafer is completed, the cabin body can be opened, the movable strip is rotated to drive the connecting strip to move to the notch a, and then the monocrystalline silicon wafer can be taken out after the movable strip is upwards moved, so that a user can conveniently and quickly place and take out the monocrystalline silicon wafer, and the working efficiency can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of etching equipment, in particular to etching equipment for sensor single crystal silicon. Background Art

[0002] Etching is a very important step in semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process. It is a main process of graphic processing related to photolithography. The so-called etching is actually understood in a narrow sense as photolithography corrosion. First, the photoresist is exposed by photolithography, and then the part to be removed is etched by other means. Etching is a process of selectively removing unnecessary materials from the surface of silicon wafers by chemical or physical methods. Its basic goal is to correctly copy the mask pattern on the coated silicon wafer. With the development of micro-manufacturing technology, in a broad sense, etching has become a general term for stripping and removing materials by solution, reactive ions or other mechanical methods, and has become a universal name for micro-machining. When etching equipment is processing single-crystal silicon wafers, it needs to be carried out in a reaction chamber. For efficiency, multiple single-crystal silicon wafers are mostly processed at the same time, but when placing and removing single-crystal silicon wafers, they need to be placed one by one, which will affect work efficiency. Summary of the invention

[0003] 1. Technical issues to be resolved

[0004] In view of the shortcomings of the prior art, the present invention provides an etching device for sensor single crystal silicon, which has the advantages of facilitating users to quickly place and remove single crystal silicon wafers, thereby improving work efficiency, etc., and solves the problem that the etching equipment needs to be operated in a reaction chamber when processing single crystal silicon wafers. For the sake of efficiency, multiple single crystal silicon wafers are mostly processed at the same time, but the single crystal silicon wafers need to be placed and removed one by one, which affects the work efficiency.

[0005] (II) Technical solution

[0006] In order to achieve the above-mentioned purpose of allowing users to quickly place and remove single crystal silicon wafers, thereby improving work efficiency, the present invention provides the following technical solutions: a sensor single crystal silicon etching device, including a base, a cabin body is arranged on the upper side of the base, an air inlet pipe and an air outlet pipe are fixedly connected to the upper wall of the cabin body, a square plate is arranged on the base, a vertical bar is arranged on the square plate, a plurality of square plates are fixedly installed on the vertical bar, a support plate is fixedly installed on the upper side of each square plate, a circular groove a is provided on each support plate, a notch a is provided on the side wall of each circular groove a, a movable bar is arranged above the rotating seat, a plurality of connecting bars are fixedly installed on the movable bar, a circular plate is fixedly installed on each connecting bar, and each A limiting ring is fixedly installed on the upper side of each connecting bar. The single crystal silicon wafer to be processed is placed on each circular plate, and then each circular plate is inserted onto each support plate. The circular plate and the limiting ring can be moved downward, so that the single crystal silicon wafer can be placed on the support plate. At the same time, the limiting ring can be sleeved on the corresponding support plate, and then the movable bar is rotated to close the cabin. When the reaction of the single crystal silicon wafer is completed, the cabin can be opened and the movable bar can be rotated to drive the connecting bar to move to the slot a. Then the movable bar can be moved upward to take out the single crystal silicon wafer, which can facilitate users to quickly place and take out the single crystal silicon wafer, thus improving work efficiency.

[0007] Preferably, a connecting groove is provided on the upper side of the rotating seat, a round block is movably connected in the connecting groove, two clamping grooves are provided on the round block, each of the clamping grooves is movably connected with a clamping block, and the two clamping blocks are fixedly connected to the connecting groove. The connecting groove can facilitate users to place the round block, and the clamping groove and the clamping block can make the round block rotate and move together with the rotating seat, and the user can disassemble and install the round block, so that the user can replace the round block conveniently.

[0008] Preferably, an arc groove is opened on the upper side of the round block, and the movable bar is movably connected to the arc groove. Two fixed blocks are fixedly installed on the upper side of the round block, and trapezoidal blocks are fixedly installed on the two fixed blocks. The trapezoidal blocks can be used to facilitate user guidance, so that the user can accurately align each connecting bar with each notch a, thereby facilitating the user to place the single crystal silicon wafer on the pallet, thereby improving the practicability of the device.

[0009] Preferably, a plurality of square tubes are fixedly passed through the movable bar, a square box is fixedly sleeved on each square tube, and each square box has no box wall in the same direction.

[0010] Preferably, each of the circular plates is provided with a circular groove b, each of the side walls of the circular groove b is provided with a notch b, and each limiting ring is provided with a notch. The square box can rotate with the rotating seat, so that the gas in the cabin can be squeezed into the square tube, so that the gas can be blown toward the single crystal silicon wafer. This can improve the contact efficiency between the gas and the single crystal silicon wafer, thereby improving the reaction efficiency of the single crystal silicon wafer. At the same time, the circular groove b, the notch b and the notch can facilitate the user to place the single crystal silicon wafer on the circular plate or remove the single crystal silicon wafer from the circular plate.

[0011] Preferably, an annular groove a is provided on the lower wall of the cabin body, a heat conduction pipe is movably connected in the annular groove a, a spiral groove is provided on the heat conduction pipe, a vertical pipe is fixedly passed through the heat conduction pipe, the vertical pipe is connected to the spiral groove, a water inlet pipe is movably connected to the vertical pipe, a fixed groove is provided on the cabin body, the water inlet pipe is fixedly installed in the fixed groove, a water outlet pipe is fixedly passed through the heat conduction pipe, and the water outlet pipe is connected to the spiral groove.

[0012] Preferably, a connecting ring is provided on the lower side of the cabin body, a groove is provided on the upper side of the connecting ring, the heat conducting pipe is fixedly connected to the groove, an arc strip a is fixedly mounted on the connecting ring, and an arc strip b is fixedly mounted on the cabin body.

[0013] Preferably, two positioning blocks are fixedly installed on the connecting ring, and two blocks are fixedly installed on the cabin body. Positioning grooves are provided on the lower sides of the two blocks, and the two positioning blocks are movably connected to the two positioning grooves respectively. A sealing ring is attached to the upper side of the vertical pipe, and a small ring is fixedly installed on the upper side of the sealing ring, and the small ring is fixedly connected to the water inlet pipe. By injecting coolant into the water inlet pipe, the coolant can pass through the spiral groove to cool the cabin body, thereby preventing the quality of the single crystal silicon wafers from being affected by excessively high temperature during the reaction, thereby improving the quality of the single crystal silicon wafers. By fixing the arc strip a and the arc strip b with a fixing part, the connecting ring can be fixedly connected to the cabin body. At the same time, the two positioning grooves and the two positioning blocks can facilitate user positioning, so that the vertical pipe can be accurately inserted into the water inlet pipe when installing the heat pipe.

[0014] (III) Beneficial effects

[0015] Compared with the prior art, the present invention provides an etching device for sensor single crystal silicon, which has the following beneficial effects:

[0016] 1. The sensor single crystal silicon etching equipment places the single crystal silicon wafer to be processed on each circular plate, and then inserts each circular plate onto each support plate, and then moves the circular plate and the limit ring downward, so that the single crystal silicon wafer can be placed on the support plate, and at the same time the limit ring can be sleeved on the corresponding support plate, and then the movable bar is rotated to close the cabin, and when the single crystal silicon wafer has completed the reaction, the cabin can be opened and the movable bar can be rotated to drive the connecting bar to move to the slot a, and then the movable bar can be moved upward to take out the single crystal silicon wafer, so that the user can quickly place and take out the single crystal silicon wafer, which can improve work efficiency.

[0017] 2. The sensor single crystal silicon etching equipment can facilitate users to place the round block through the connecting groove. At the same time, the round block can be rotated and moved along with the rotating seat through the card slot and the card block. At the same time, it is convenient for users to disassemble and install the round block, so that users can easily replace the round block.

[0018] 3. The sensor single crystal silicon etching equipment can facilitate user guidance through the trapezoidal block, so that the user can accurately align each connecting strip with each notch a, thereby facilitating the user to place the single crystal silicon wafer on the pallet, thus improving the practicability of the device.

[0019] 4. The sensor single crystal silicon etching equipment can rotate with the rotating seat through the square box, so that the gas in the cabin can be squeezed into the square tube, so that the gas can be blown to the single crystal silicon wafer, which can improve the contact efficiency between the gas and the single crystal silicon wafer, thereby improving the reaction efficiency of the single crystal silicon wafer. At the same time, the circular groove b, the notch b and the gap can facilitate the user to place the single crystal silicon wafer on the circular plate or remove the single crystal silicon wafer from the circular plate.

[0020] 5. The sensor single crystal silicon etching equipment injects coolant into the water inlet pipe, so that the coolant can pass through the spiral groove to cool the cabin, thereby avoiding the single crystal silicon wafer from being overly hot during the reaction and affecting the quality of the single crystal silicon wafer, thereby improving the quality of the single crystal silicon wafer.

[0021] 6. The single crystal silicon etching equipment of the sensor can fix the arc strip a and the arc strip b through the fixing parts, so that the connecting ring can be fixedly connected to the cabin body. At the same time, the two positioning grooves and the two positioning blocks can facilitate the user to position, so that the vertical pipe can be accurately inserted into the water pipe when installing the heat pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the front three-dimensional structure of the present invention;

[0023] Figure 2 For the present invention Figure 1 Schematic diagram of the three-dimensional structure of the middle base;

[0024] Figure 3 For the present invention Figure 2 Schematic diagram of the three-dimensional structure of the middle rotating seat;

[0025] Figure 4 For the present invention Figure 2 Schematic diagram of the three-dimensional structure of the middle activity bar;

[0026] Figure 5 For the present invention Figure 2 Schematic diagram of the three-dimensional structure of the middle support plate;

[0027] Figure 6 For the present invention Figure 2 Schematic diagram of the three-dimensional structure of the middle vertical bar;

[0028] Figure 7 For the present invention Figure 1 A schematic diagram of the cutaway three-dimensional structure of the middle cabin;

[0029] Figure 8 For the present invention Figure 7 Schematic diagram of the local enlarged structure at point A in the middle.

[0030] In the figure: 1, base; 2, arc strip b; 3, arc strip a; 4, cabin; 5, air outlet pipe; 6, air inlet pipe; 7, water inlet pipe; 8, block; 9, positioning groove; 10, positioning block; 11, connecting ring; 12, groove; 13, heat conducting pipe; 14, annular groove a; 15, spiral groove; 16, fixed groove; 17, vertical pipe; 18, square plate; 19, sealing ring; 20, small ring; 21, vertical strip; 2 2. Rotating seat; 23. Clamping block; 24. Round block; 25. Trapezoidal block; 26. Fixed block; 27. Arc groove; 28. Square box; 29. ​​Movable bar; 30. Support plate; 31. Clamping groove; 32. Connecting groove; 33. Round plate; 34. Square tube; 35. Connecting bar; 36. Round groove a; 37. Notch a; 38. Notch b; 39. Notch; 40. Limiting ring; 41. Round groove b; 42. Water outlet pipe. DETAILED DESCRIPTION

[0031] The present invention is further described in detail below in conjunction with the accompanying drawings, wherein the same components are represented by the same figure numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower", "bottom surface" and "top surface" used in the following description refer to directions in the drawings, and the words "inside" and "outside" refer to directions toward or away from the geometric center of a specific component, respectively.

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] See also Figure 1-Figure 8The present invention provides a technical solution: a sensor single crystal silicon etching device, comprising a base 1, a cabin 4 is arranged on the upper side of the base 1, an air inlet pipe 6 and an air outlet pipe 5 are fixedly connected to the upper wall of the cabin 4, a square plate 22 is arranged on the base 1, a vertical bar 21 is arranged on the square plate 22, a plurality of square plates 22 are fixedly installed on the vertical bar 21, a support plate 30 is fixedly installed on the upper side of each square plate 22, a circular groove a36 is opened on each support plate 30, a notch a37 is opened on the side wall of each circular groove a36, a movable bar 29 is arranged above the rotating seat 22, a plurality of connecting bars 35 are fixedly installed on the movable bar 29, a circular plate 33 is fixedly installed on each connecting bar 35, a limiting ring 40 is fixedly installed on the upper side of each connecting bar 35, and the The single crystal silicon wafer is placed on each circular plate 33, and then each circular plate 33 is inserted onto each support plate 30, and then the circular plate 33 and the limit ring 40 can be moved downward, so that the single crystal silicon wafer can be placed on the support plate 30, and at the same time the limit ring 40 can be sleeved on the corresponding support plate 30, and then the movable bar 29 is rotated and moved, so that the cabin 4 can be closed, and when the reaction of the single crystal silicon wafer is completed, the cabin 4 can be opened and the movable bar 29 can be rotated to drive the connecting bar 35 to move to the notch a37, and then the movable bar 29 can be moved upward to take out the single crystal silicon wafer, so that the user can quickly place and take out the single crystal silicon wafer, which can improve work efficiency. A connecting groove 32 is provided on the upper side of the rotating seat 22, and a round block is movably connected in the connecting groove 32 24, two card slots 31 are provided on the round block 24, each card slot 31 is movably connected with a card block 23, and the two card blocks 23 are fixedly connected to the connecting slot 32. The connecting slot 32 can facilitate the user to place the round block 24, and the card slot 31 and the card block 23 can make the round block 24 rotate and move along with the rotating seat 22, and at the same time, it is convenient for the user to disassemble and install the round block 24, so that it is convenient for the user to replace the round block 24. An arc groove 27 is provided on the upper side of the round block 24, and the movable bar 29 is movably connected with the arc groove 27. Two fixed blocks 26 are fixedly installed on the upper side of the round block 24, and trapezoidal blocks 25 are fixedly installed on the two fixed blocks 26. The trapezoidal blocks 25 can facilitate the user to guide, so that the user can accurately place each A connecting strip 35 is aligned with each notch a37, so that the user can place the single crystal silicon wafer on the support plate 30 conveniently, so that the practicality of the device can be improved. A plurality of square tubes 34 are fixedly passed through the movable strip 29, and a square box 28 is fixedly sleeved on each square tube 34. Each square box 28 has no box wall in the same direction. A circular groove b41 is provided on each circular plate 33, and a notch b38 is provided on the side wall of each circular groove b41. A notch 39 is provided on each limiting ring 40, and the square box 28 can rotate with the rotating seat 22, so that the gas in the cabin 4 can be squeezed into the square tube 34, so that the gas can be blown to the single crystal silicon wafer, so that the contact efficiency between the gas and the single crystal silicon wafer can be improved, thereby improving the reaction efficiency of the single crystal silicon wafer.At the same time, the circular groove b41, the notch b38 and the notch 39 can facilitate the user to place the single crystal silicon wafer on the circular plate 33 or remove the single crystal silicon wafer from the circular plate 33. The lower wall of the cabin 4 is provided with an annular groove a14, and a heat conducting pipe 13 is movably connected in the annular groove a14. The heat conducting pipe 13 is provided with a spiral groove 15. A vertical pipe 17 is fixedly passed through the heat conducting pipe 13, and the vertical pipe 17 is communicated with the spiral groove 15. A water inlet pipe 7 is movably sleeved on the vertical pipe 17. The cabin 4 is provided with a fixed groove 16, and the water inlet pipe 7 is fixedly installed in the fixed groove 16. A water outlet pipe 42 is fixedly passed through the heat conducting pipe 13, and the water outlet pipe 42 is communicated with the spiral groove 15. By injecting coolant into the water inlet pipe 7, the coolant can pass through the spiral groove 15 to cool the cabin 4, thereby preventing the single crystal silicon wafer from being overly hot during the reaction and affecting the quality of the single crystal silicon wafer. In this way, the quality of the single crystal silicon wafer can be improved. 4 is provided with a connecting ring 11 at the lower side, a groove 12 is provided at the upper side of the connecting ring 11, and the heat conducting pipe 13 is fixedly connected to the groove 12. An arc strip a3 is fixedly installed on the connecting ring 11, and an arc strip b2 is fixedly installed on the cabin body 4. Two positioning blocks 10 are fixedly installed on the connecting ring 11, and two square blocks 8 are fixedly installed on the cabin body 4. Positioning grooves 9 are provided at the lower sides of the two square blocks 8. The two positioning blocks 10 are movably connected with the two positioning grooves 9 respectively. A sealing ring 19 is attached to the upper side of the vertical pipe 17, and a small ring 20 is fixedly installed at the upper side of the sealing ring 19. The small ring 20 is fixedly connected to the water inlet pipe 7. The arc strip a3 and the arc strip b2 are fixedly connected by the fixing parts, so that the connecting ring 11 can be fixedly connected to the cabin body 4. At the same time, the two positioning grooves 9 and the two positioning blocks 10 can facilitate the user to perform positioning, so that the vertical pipe 17 can be accurately inserted into the water inlet pipe 7 when installing the heat conducting pipe 13.

[0034] When in use, the first step is: by placing the single crystal silicon wafer to be processed on each circular plate 33, and then inserting each circular plate 33 onto each support plate 30, the circular plate 33 and the limit ring 40 can be moved downward, so that the single crystal silicon wafer can be placed on the support plate 30, and the limit ring 40 can be sleeved on the corresponding support plate 30, and then the movable bar 29 is rotated to close the cabin body 4. After the reaction of the single crystal silicon wafer is completed, the cabin body 4 can be opened and the movable bar 29 can be rotated to drive the connecting bar 35 to move to the groove a37. Then the movable bar 29 can be moved upward to take out the single crystal silicon wafer, so that the user can quickly place and take out the single crystal silicon wafer, which can improve work efficiency.

[0035] Step 2: The connecting groove 32 can facilitate users to place the round block 24. At the same time, the card slot 31 and the card block 23 can make the round block 24 rotate and move together with the rotating seat 22. At the same time, it is convenient for users to disassemble and install the round block 24, so that users can easily replace the round block 24.

[0036] Step 3: The trapezoidal block 25 can facilitate the user's guidance, so that the user can accurately align each connecting bar 35 with each notch a37, thereby making it convenient for the user to place the single crystal silicon wafer on the support plate 30, thereby improving the practicability of the device.

[0037] Step 4: The square box 28 can rotate with the rotating seat 22, so that the gas in the chamber 4 can be squeezed into the square tube 34, so that the gas can be blown toward the single crystal silicon wafer, which can improve the contact efficiency between the gas and the single crystal silicon wafer, thereby improving the reaction efficiency of the single crystal silicon wafer. At the same time, the circular groove b41, the notch b38 and the notch 39 can facilitate the user to place the single crystal silicon wafer on the circular plate 33 or remove the single crystal silicon wafer from the circular plate 33.

[0038] Step 5: By injecting coolant into the water inlet pipe 7, the coolant can pass through the spiral groove 15 to cool the chamber 4, thereby preventing the single crystal silicon wafer from having an excessively high temperature during the reaction and affecting the quality of the single crystal silicon wafer, thereby improving the quality of the single crystal silicon wafer.

[0039] Step 6: By fixing the arc strip a3 and the arc strip b2 together through the fixing parts, the connecting ring 11 can be fixedly connected to the cabin body 4. At the same time, the two positioning grooves 9 and the two positioning blocks 10 can facilitate the user to position, so that the vertical pipe 17 can be accurately inserted into the water inlet pipe 7 when installing the heat pipe 13.

[0040] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A sensor single crystal silicon etching device, comprising a base (1), a chamber (4) is arranged on the upper side of the base (1), an air inlet pipe (6) and an air outlet pipe (5) are fixedly connected to the upper wall of the chamber (4), characterized in that: The base (1) is provided with a square plate (22), the square plate (22) is provided with a vertical bar (21), a plurality of square plates (22) are fixedly mounted on the vertical bar (21), a support plate (30) is fixedly mounted on the upper side of each square plate (22), a circular groove a (36) is provided on each support plate (30), a notch a (37) is provided on the side wall of each circular groove a (36), a movable bar (29) is provided above the rotating seat (22), a plurality of connecting bars (35) are fixedly mounted on the movable bar (29), a circular plate (33) is fixedly mounted on each connecting bar (35), and a limiting ring (40) is fixedly mounted on the upper side of each connecting bar (35).

2. The sensor single crystal silicon etching device according to claim 1, characterized in that: The upper side of the rotating seat (22) is provided with a connecting groove (32), a round block (24) is movably connected in the connecting groove (32), two clamping grooves (31) are provided on the round block (24), each clamping groove (31) is movably connected to a clamping block (23), and the two clamping blocks (23) are fixedly connected to the connecting groove (32).

3. The etching device for single crystal silicon of a sensor according to claim 2, characterized in that: An arc groove (27) is provided on the upper side of the round block (24), and a movable bar (29) is movably connected to the arc groove (27). Two fixed blocks (26) are fixedly installed on the upper side of the round block (24), and a trapezoidal block (25) is fixedly installed on each of the two fixed blocks (26).

4. The etching equipment for single crystal silicon of a sensor according to claim 1, characterized in that: A plurality of square tubes (34) are fixedly passed through the movable bar (29), a square box (28) is fixedly sleeved on each square tube (34), and each square box (28) has no box wall in the same direction.

5. The sensor single crystal silicon etching device according to claim 1, characterized in that: Each circular plate (33) is provided with a circular groove b (41), a side wall of each circular groove b (41) is provided with a notch b (38), and each limiting ring (40) is provided with a notch (39).

6. The sensor single crystal silicon etching equipment according to claim 1, characterized in that: The lower wall of the cabin (4) is provided with an annular groove a (14), a heat conducting pipe (13) is movably connected in the annular groove a (14), a spiral groove (15) is provided on the heat conducting pipe (13), a vertical pipe (17) is fixedly passed through the heat conducting pipe (13), the vertical pipe (17) is communicated with the spiral groove (15), a water inlet pipe (7) is movably sleeved on the vertical pipe (17), a fixed groove (16) is provided on the cabin (4), the water inlet pipe (7) is fixedly installed in the fixed groove (16), a water outlet pipe (42) is fixedly passed through the heat conducting pipe (13), and the water outlet pipe (42) is communicated with the spiral groove (15).

7. The sensor single crystal silicon etching device according to claim 6, characterized in that: A connecting ring (11) is provided on the lower side of the cabin body (4), a groove (12) is provided on the upper side of the connecting ring (11), a heat conducting pipe (13) is fixedly connected to the groove (12), an arc strip a (3) is fixedly mounted on the connecting ring (11), and an arc strip b (2) is fixedly mounted on the cabin body (4).

8. The sensor single crystal silicon etching device according to claim 6, characterized in that: Two positioning blocks (10) are fixedly mounted on the connecting ring (11), two blocks (8) are fixedly mounted on the cabin body (4), positioning grooves (9) are provided on the lower sides of the two blocks (8), the two positioning blocks (10) are movably connected to the two positioning grooves (9) respectively, a sealing ring (19) is attached to the upper side of the vertical pipe (17), a small ring (20) is fixedly mounted on the upper side of the sealing ring (19), and the small ring (20) is fixedly connected to the water inlet pipe (7).

Images