Display panel, processing method thereof and electronic equipment

Abstract

The invention relates to a display panel, a processing method thereof and electronic equipment. The display panel comprises a base layer, and the base layer is provided with a display area and a bonding area arranged outside the display area. The transition part is arranged in the bonding area; the bonding parts and the transition parts are arranged on the same surface of the bonding area, and the transition parts are located on the side faces of the bonding parts; the transition part comprises a first organic layer and an interlayer dielectric layer bonded with the first organic layer, the interlayer dielectric layer comprises an inorganic layer and a second organic layer arranged on the surface of the inorganic layer, the inorganic layer is connected to the base layer, and the second organic layer is bonded with the first organic layer.

Description

Technical Field

[0001] The present disclosure relates to the field of terminal technology, and in particular to a display panel and a processing method thereof, and an electronic device. Background Art

[0002] In order to occupy a favorable market, major manufacturers have considered improving the configuration of mainstream flagship models, so they need to configure more and larger-scale devices inside the devices. As the number and specifications of devices increase, how to achieve a compact layout of the internal space of electronic equipment has become a problem that designers need to solve. Summary of the invention

[0003] The present disclosure provides a display panel and a processing method thereof, and an electronic device to solve the deficiencies in the related art.

[0004] According to a first aspect of an embodiment of the present disclosure, there is provided a display panel, including:

[0005] A base layer, the base layer having a display area and a bonding area arranged outside the display area;

[0006] A transition portion, the transition portion being disposed in the bonding area;

[0007] A plurality of bonding parts, wherein the plurality of bonding parts and the transition part are arranged on the same surface of the bonding area, and the transition part is located on the side of the bonding part;

[0008] The transition part includes a first organic layer and an interlayer dielectric layer bonded to the first organic layer, the interlayer dielectric layer includes an inorganic layer and a second organic layer arranged on the surface of the inorganic layer, the inorganic layer is connected to the base layer, and the second organic layer is bonded to the first organic layer.

[0009] Optionally, the second organic layer is formed by chemically treating the surface of the inorganic layer.

[0010] Optionally, the inorganic layer includes a silicon nitride layer, and the second organic layer includes a plurality of organic materials, wherein a molecular structure of one of the organic materials is:

[0011]

[0012] Wherein, A is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element.

[0013] Optionally, the molecular structure of an organic material of the second organic layer is:

[0014]

[0015] Wherein, the carbon element is connected to the silicon element or the carbon element.

[0016] Optionally, the inorganic layer further includes a silicon oxide layer, and the silicon oxide layer is disposed on a surface of the silicon nitride layer that is away from the second organic layer.

[0017] According to a second aspect of the embodiments of the present disclosure, there is provided an electronic device, comprising a display panel as described in any one of the above embodiments.

[0018] According to a third aspect of an embodiment of the present disclosure, a method for processing a display panel is provided, comprising:

[0019] Providing a base layer, the base layer having a display area and a bonding area arranged outside the display area;

[0020] An interlayer dielectric layer is formed on the surface of the base layer, wherein at least a portion of the interlayer dielectric layer corresponding to the bonding area includes an inorganic layer and a second organic layer disposed on the surface of the inorganic layer;

[0021] Forming a metal pattern layer on the surface of the interlayer dielectric layer, wherein the metal pattern layer forms a source-drain metal layer corresponding to the display area and a plurality of spaced bonding parts corresponding to the bonding area;

[0022] A first organic layer is formed in the bonding area, the first organic layer is connected to the bonding portion, and the first organic layer and the second organic layer are bonded to the side of the bonding portion to obtain a display panel.

[0023] Optionally, also include:

[0024] A touch layer bonded to the first organic layer is formed, wherein the touch layer corresponds to the bonding portion one by one and is electrically connected through a metal via.

[0025] Optionally, forming an interlayer dielectric layer on the surface of the base layer includes:

[0026] forming an inorganic layer on the surface of the base layer;

[0027] At least the surface of the inorganic layer corresponding to the bonding area is dried by CF4;

[0028] The dried surface is subjected to N2O evaporation treatment to form an inorganic layer and a second organic layer disposed on the surface of the inorganic layer.

[0029] Optionally, the inorganic layer includes a silicon nitride layer, the second organic layer is formed on the surface of the silicon nitride layer, and the second organic layer includes a plurality of organic materials, wherein the molecular structure of one of the organic materials is:

[0030]

[0031] Wherein, A is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element.

[0032] Optionally, the molecular structure formula of another organic material of the second organic layer is:

[0033]

[0034] Wherein, the carbon element is connected to the silicon element or the carbon element.

[0035] The technical solution provided by the embodiments of the present disclosure may have the following beneficial effects:

[0036] It can be seen from the above embodiments that in the present disclosure, the surface layer of the interlayer dielectric layer is organicized to obtain a second organic layer, and the connection stability is improved by connecting the second organic layer to the first organic layer, thereby reducing the risk of peeling caused by bonding the driver chip.

[0037] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0039] Figure 1 It is a layout diagram of a display panel in the related art.

[0040] Figure 2 is a partial schematic diagram of a display panel according to an exemplary embodiment.

[0041] Figure 3 FIG. 4 is a schematic cross-sectional view of an interlayer dielectric layer according to an exemplary embodiment.

[0042] Figure 4 The figure is a processing flow chart of a display panel according to an exemplary embodiment.

[0043] Figure 5 is a partial cross-sectional schematic diagram of a display panel according to an exemplary embodiment.

[0044] Figure 6 The figure is a partial schematic diagram showing the assembly of a display panel and a driving chip according to an exemplary embodiment. DETAILED DESCRIPTION

[0045] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0046] The terms used in this disclosure are for the purpose of describing specific embodiments only and are not intended to limit the disclosure. The singular forms of "a", "said" and "the" used in this disclosure and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0047] It should be understood that although the terms first, second, third, etc. may be used in the present disclosure to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present disclosure, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0048] Currently, in order to shorten the area of ​​the non-display region at the bottom of an electronic device, COP (Chip on PI, COP) packaging has become the mainstream packaging method for driver chips. Figure 1 A structural schematic diagram of a display panel in the COP packaging technology in the related art is shown, the display panel includes a display area 100, an intermediate area 200 and a bonding area 300, the intermediate area 200 is connected between the display area 100 and the bonding area 300, the intermediate area 200 is sequentially arranged with a routing area and a bending area along a direction away from the display area 100, the bending area is connected to the bonding area 300, the routing area includes a plurality of connecting routing lines, and the plurality of connecting routing lines are connected to the data lines of the display area 100 in a fan-out manner, the bonding area 300 may include a plurality of bonding parts, the plurality of bonding parts may be electrically connected to the connecting routing lines of the routing area, and the subsequent driver chip of the display panel is electrically connected to the bonding part.

[0049] However, in the process of bonding the driver chip, the pins of the driver chip inevitably generate a force, which causes the film layer of the bonding area 300 to be stressed, making it easy for the connection film layers with weaker bonding performance to peel off. The bonding area 300 includes an organic layer and an interlayer dielectric layer connected to the organic layer. Since the interlayer dielectric layer in the field is usually an inorganic layer, and the inorganic layer has weak bonding performance, peeling occurs in the process of bonding the driver chip, affecting the yield of the display panel and the visual effect of the user.

[0050] Based on this, Figure 2 and Figure 3 As shown, the present disclosure provides a display panel, which may include a substrate 1 , a plurality of transition portions 2 and a plurality of bonding portions 3 . The substrate 1 has a display area 11 and a bonding area 12 disposed outside the display area 11 .

[0051] For example, in the COP packaging technology, the transition part 2 and the bonding part 3 are located on the back of the display area 11, that is, on the non-display side of the display panel. In the area of ​​the display area 11, a film structure such as an organic display layer group can be formed on the surface of the base layer 1; a bonding part 3 (for example, the bonding part 3 can be a pin) electrically connected to the driver chip can be formed in the bonding area 12. Among them, the driver chip can include a display driver chip (Display Driver Integrated Circuit, DDIC), and / or, the driver chip can include a touch chip; or, the driver chip can include a TDDI (Touch and Display Driver Integration, touch and display driver integration) chip.

[0052] In the disclosed embodiment, the transition portion 2 and the bonding portion 3 are both arranged on the same surface of the bonding area 12, and the transition portion 2 is located on the side of the bonding portion 3. For example, the transition portion 2 can be arranged around the bonding portion 3 to insulate the adjacent bonding portion 3 through the action of the transition portion 2.

[0053] For example, the transition part 2 may include a first organic layer 21 and an interlayer dielectric layer 22 bonded to the first organic layer 21. In the related art, the interlayer dielectric layer 22 is usually made of inorganic material, which results in a weak connection between the interlayer dielectric layer 22 and the first organic layer 21. In addition, the transition part 2 is arranged close to the bonding part 3. Therefore, when bonding the driver chip, the force acting on the transition part 2 is relatively large, and the problem of film glass is prone to occur. Figure 3As shown, the interlayer dielectric layer 22 in the embodiment of the present disclosure may include an inorganic layer 221 and a second organic layer 222 arranged on the surface of the inorganic layer 221, and the second organic layer 222 is bonded to the first organic layer 21, thereby improving the connection strength between the interlayer dielectric layer 22 and the first organic layer 21 and reducing the risk of interlayer delamination caused by the bonding driver chip 4.

[0054] In this embodiment, the second organic layer 222 may be formed by chemically treating the surface of the inorganic layer 221, so compared with the related art, the thickness of the bonding portion 3 is not increased, and the influence on the bending performance of the display panel is reduced. For example, the inorganic layer 221 may include a silicon nitride layer, and the second organic layer 222 is formed on the surface of the silicon nitride layer. The second organic layer 222 may include a plurality of organic materials, and the molecular structure of one of the organic materials is:

[0055]

[0056] Wherein, the A element is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element. For example, the organic structural formula of the organic material may be:

[0057]

[0058] Or the organic structural formula of the organic material can be:

[0059]

[0060] Of course, in some implementations, the second organic layer 222 includes a plurality of organic materials, and the plurality of organic materials include the two organic materials illustrated in the above embodiment.

[0061] For example, the molecular structure formula of another organic material of the second organic layer 222 may be:

[0062]

[0063] Among them, the carbon element is connected to the silicon element or the carbon element.

[0064] For example, the structure expression of the organic material can be:

[0065]

[0066] or,

[0067]

[0068] Of course, when the second organic layer 222 includes multiple materials, the second organic layer 222 may also include organic materials corresponding to the above two organic structural formulas at the same time.

[0069] Furthermore, the inorganic layer 221 may further include a silicon oxide layer, and the silicon oxide layer is disposed on a surface of the silicon nitride layer that is away from the second organic layer 222 .

[0070] Based on the technical solution of the present disclosure, an electronic device is also provided, which may include the display panel described in any of the above embodiments. The electronic device may include a mobile phone terminal or a tablet terminal.

[0071] In the embodiment of the present disclosure, the electronic device may further include a driver chip, and the bonding area 12 of the display panel is electrically connected to the driver chip. Figure 6 As shown, the bonding area 12 has a bonding portion 3 (eg, the bonding portion 3 may be a pin), and the driving chip 4 includes chip pins 41 , each of which is electrically connected to a single bonding portion 3 (eg, a pin) corresponding to the bonding area 12 .

[0072] In the embodiment of the present disclosure, the driver chip may include a DDIC chip, and / or the driver chip may include a touch chip; or the driver chip may include a TDDI chip. By way of example, the driver chip 4 (such as a DDIC chip or a TDDI chip) may control display parameters such as the color and brightness of the display panel so that the display panel can display image information. By way of example, the driver chip 4 (such as a touch chip or a TDDI chip) may implement a touch function of the display panel.

[0073] The present disclosure also provides a method for processing a display panel. Figure 4 As shown, the processing method may include the following steps:

[0074] In step 401 , a substrate 1 is provided. The substrate 1 has a display area 11 and a bonding area 12 disposed outside the display area 11 .

[0075] In this embodiment, Figure 5 As shown, the base layer 1 may be a film layer structure of the display panel located below the interlayer dielectric layer 22. For example, the base layer may include a substrate 101 and a barrier layer 102, and the barrier layer may be deposited on the substrate, and the barrier layer may be an inorganic material layer, and the substrate may be a flexible substrate; the base layer may include a single-layer substrate and a single-layer barrier layer, or the base layer may include a double-layer substrate and a double-layer barrier layer, and the double-layer substrate and the double-layer barrier layer are alternately arranged.

[0076] The base layer may also include a first insulating layer 103 formed on the blocking layer, an active layer 104 may be formed on the first insulating layer 103 by a patterning process, and then a second insulating layer 105 covering the active layer 104 is formed, and subsequently a first electrode plate 106 and a third insulating layer 107 covering the first electrode plate 106 may be patterned on the second insulating layer 105, and then a second electrode plate 108 may be patterned on the third insulating layer 107.

[0077] In step 402 , an interlayer dielectric layer 22 is formed on the surface of the base layer. The interlayer dielectric layer 22 at least includes an inorganic layer 221 and a second organic layer 222 disposed on the surface of the inorganic layer 221 in a portion corresponding to the bonding region 12 .

[0078] In this embodiment, an interlayer dielectric layer 22 can be first formed on the surface of the base layer, and then the surface of the interlayer dielectric layer 22 corresponding to the bonding area 12 or the entire surface of the interlayer dielectric layer 22 is chemically treated to obtain the inorganic layer 221 and the second organic layer 222 of the interlayer dielectric layer 22.

[0079] For example, in some embodiments, an inorganic layer can be first formed on the surface of the base layer, and then the surface of the inorganic layer facing away from the base layer is dried with CF4 to form Si-F chemical bonds in the relevant structural formula on the surface of the inorganic layer. Subsequently, the dried surface is subjected to N2O evaporation treatment to form an inorganic layer and a second organic layer arranged on the surface of the inorganic layer.

[0080] For example, the inorganic layer 221 may include a silicon nitride layer, and the surface of the silicon nitride layer is dried by CF4 so that a Si-F chemical bond is formed in the relevant structural formula on the surface of the inorganic layer 221, and then the Si-F bond is replaced by a Si-N bond or a Si-O bond by N2O evaporation treatment. Furthermore, since the gas in the air contains carbon elements, carbon elements can be added during the chemical change process, thereby converting the surface layer of the silicon nitride from an inorganic material to an organic material, increasing the viscosity between the interlayer dielectric layer 22 and the first organic layer 21, and reducing the risk of peeling during the bonding process of the driver chip.

[0081] The inorganic layer 221 may include a silicon nitride layer. The second organic layer 222 is formed on the surface of the silicon nitride layer. The second organic layer 222 may include a plurality of organic materials, wherein the molecular structure of one organic material is:

[0082]

[0083] Wherein, the A element is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element. For example, the organic structural formula of the organic material may be:

[0084]

[0085] Or the organic structural formula of the organic material can be:

[0086]

[0087] Of course, in some implementations, the second organic layer 222 includes a plurality of organic materials, and the plurality of organic materials include the two organic materials illustrated in the above embodiment.

[0088] Furthermore, the molecular structure formula of another organic material of the second organic layer 222 is:

[0089]

[0090] Among them, the carbon element is connected to the silicon element or the carbon element.

[0091] For example, the structure expression of the organic material can be:

[0092]

[0093] or,

[0094]

[0095] Of course, when the second organic layer 222 includes multiple materials, the second organic layer 222 may also include organic materials corresponding to the above two organic structural formulas at the same time.

[0096] In step 403 , a first organic layer 21 is formed in the bonding area 12 , the first organic layer 21 is connected to the bonding portion 3 , and the first organic layer and the second organic layer are bonded to the side of the bonding portion.

[0097] In this embodiment, a metal film can be formed on the surface of the interlayer dielectric layer 22, and then a patterning process is performed on the metal film to form a metal pattern layer, wherein the metal pattern layer includes a source and drain metal layer 109 corresponding to the display area 11 and a plurality of bonding parts 3 corresponding to the bonding area 12, wherein the bonding parts 3 can be connected to a plurality of data lines of the display area 11, and the data lines are respectively connected to the source and gate of the display area 11, so as to subsequently realize an electrical connection between the driver chip 4 and the display panel through the bonding driver chip 4.

[0098] In step 404 , a first organic layer 21 is formed in the bonding area 12 , the first organic layer 21 is connected to the bonding portion 3 , and the first organic layer 21 is bonded to the second organic layer 222 on the side of the bonding portion 3 .

[0099] In this embodiment, an organic material may be coated on the surface of the metal pattern layer to form a first organic layer 21, and the first organic layer 21 is connected to the second organic layer 222 of the interlayer dielectric layer 22 at the transition portion 2, and the first organic layer 21 is connected to the bonding portion 3 at the bonding portion 3. When the driver chip is subsequently bonded, the chip pins of the driver chip may be electrically connected to the bonding portion 3 through metal vias.

[0100] Optionally, before coating and forming the first organic layer 21, an insulating layer 111 covering the bonding portion 3 may be formed on the bonding portion 3. The insulating layer 111 may be formed by the same process as the insulating layer 111 of the display area 11, or may be formed by a separate process. The chip pins of the subsequent driving chip may be connected to the bonding portion 3 through metal vias provided in the insulating layer 111 and the first organic layer 21.

[0101] In some embodiments, the chip pins of the driving chip can be connected to the bonding part 3 through the metal vias of the first organic layer 21 and the insulating layer 111; in other embodiments, a touch layer 223 bonded to the first organic layer 21 can be formed in the area of ​​the bonding part 3, and the touch layer 223 is arranged in a one-to-one correspondence with the bonding part 3, and the touch layer 223 and the bonding part 3 can be point-linked through the metal vias arranged in the first organic layer 21 and the insulating layer 111. Subsequently, the touch layer 223 can be electrically connected to the chip pins of the driving chip, thereby realizing the electrical connection between the driving chip and the display panel.

[0102] Of course, the processing technology of the display panel may also include forming an organic display layer, a packaging layer and a protective cover plate in the area corresponding to the display area 11, which will not be elaborated in detail here.

[0103] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the disclosure disclosed herein. The present disclosure is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The description and examples are to be considered exemplary only, and the true scope and spirit of the present disclosure are indicated by the following claims.

[0104] It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A display panel, characterized in that: The display panel comprises: A base layer, the base layer having a display area and a bonding area arranged outside the display area; A transition portion, the transition portion being disposed in the bonding area; A plurality of bonding parts, wherein the plurality of bonding parts and the transition part are arranged on the same surface of the bonding area, and the transition part is located on the side of the bonding part; The transition part includes a first organic layer and an interlayer dielectric layer bonded to the first organic layer, the interlayer dielectric layer includes an inorganic layer and a second organic layer arranged on the surface of the inorganic layer, the inorganic layer is connected to the base layer, and the second organic layer is bonded to the first organic layer.

2. The display panel according to claim 1, characterized in that: The second organic layer is formed by chemically treating the surface of the inorganic layer.

3. The display panel according to claim 1, characterized in that: The inorganic layer includes a silicon nitride layer, and the second organic layer includes a plurality of organic materials, wherein the molecular structure formula of one organic material is: Wherein, A is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element.

4. The display panel according to claim 3, characterized in that: The molecular structure formula of an organic material of the second organic layer is: Wherein, the carbon element is connected to the silicon element or the carbon element.

5. The display panel according to claim 3, characterized in that: The inorganic layer further includes a silicon oxide layer, and the silicon oxide layer is disposed on a surface of the silicon nitride layer on a side away from the second organic layer.

6. An electronic device, characterized in that: The invention comprises a display panel as claimed in any one of claims 1 to 5.

7. A method for processing a display panel, characterized in that: include: Providing a base layer, the base layer having a display area and a bonding area arranged outside the display area; An interlayer dielectric layer is formed on the surface of the base layer, wherein at least a portion of the interlayer dielectric layer corresponding to the bonding area includes an inorganic layer and a second organic layer disposed on the surface of the inorganic layer; Forming a metal pattern layer on the surface of the interlayer dielectric layer, wherein the metal pattern layer forms a source-drain metal layer corresponding to the display area and a plurality of spaced bonding parts corresponding to the bonding area; A first organic layer is formed in the bonding area, the first organic layer is connected to the bonding portion, and the first organic layer and the second organic layer are bonded to the side of the bonding portion to obtain a display panel.

8. The processing method according to claim 7, characterized in that: Also includes: A touch layer bonded to the first organic layer is formed, wherein the touch layer corresponds to the bonding portion one by one and is electrically connected through a metal via.

9. The processing method according to claim 7, characterized in that: The step of forming an interlayer dielectric layer on the surface of the base layer comprises: forming an inorganic layer on the surface of the base layer; At least the surface of the inorganic layer corresponding to the bonding area is dried by CF4; The dried surface is subjected to N2O evaporation treatment to form an inorganic layer and a second organic layer disposed on the surface of the inorganic layer.

10. The processing method according to claim 7, characterized in that: The inorganic layer includes a silicon nitride layer, the second organic layer is formed on the surface of the silicon nitride layer, and the second organic layer includes a plurality of organic materials, wherein the molecular structure formula of one organic material is: Wherein, A is a carbon element or a silicon element, each A element is connected to a carbon element or a silicon element, and the organic material includes a carbon element.

11. The processing method according to claim 7, characterized in that: The molecular structure formula of another organic material of the second organic layer is: Wherein, the carbon element is connected to the silicon element or the carbon element.

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