Preparation method of composite patterned substrate and preparation methods of control wafer and positive wafer

Abstract

The invention discloses a preparation method of a composite patterned substrate and preparation methods of a control wafer and a positive wafer. The preparation method of the substrate comprises the following steps: providing a first control wafer and a first positive wafer; wherein the first control wafer and the positive wafer are heterogeneous; the surface of each of the first control wafer and the positive wafer comprises a mask structure which is periodically arranged; the first control wafers and the positive wafers are arranged at different preset wafer positions of the tray according to the first preset number, and the first control wafers and the positive wafers are arranged adjacently; etching the first control wafer and the positive wafer by adopting a dry etching process and utilizing preset etching gas; wherein the reaction rate of the first control wafer and the preset etching gas is greater than the reaction rate of the positive wafer and the preset etching gas. According to the method, the positive wafer and the heterogeneous first control wafer are arranged, and the reaction rates of the first control wafer and the positive wafer with the preset etching gas are different, so that the etching rate of the positive wafer is effectively adjusted, the in-wafer etching uniformity of the positive wafer is directionally changed, and the etching effect and the etching uniformity of the positive wafer are ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of composite patterned substrates, and in particular to a method for preparing a composite patterned substrate and a method for preparing a control film and a positive film. Background Art

[0002] In the manufacturing process of LED light-emitting diodes and other optoelectronic devices, sapphire substrates are increasingly used. They are usually divided into planar sapphire substrates and patterned sapphire substrates. Usually, nitride optoelectronic devices are prepared on sapphire substrates. There is about 16% lattice matching and about 26% thermal expansion coefficient mismatch between sapphire and GaN epitaxial layer. Therefore, there is a 108cm -2 ~1016cm -2 The dislocation density of the LED chip results in low internal quantum efficiency. In addition, the refractive indexes of the sapphire substrate, GaN epitaxial layer and air are 1.7, 2.5 and 1.0 respectively, and the photon escape angle in the active layer of the LED chip is 23°, resulting in the LED light extraction efficiency being less than 5%. The low internal quantum efficiency and light extraction efficiency limit the external quantum efficiency of the LED chip, that is, the improvement of the light extraction efficiency. Therefore, in order to increase the light extraction efficiency, a method is proposed to cover a layer of optical thin film material on the original sapphire substrate to form a composite patterned substrate.

[0003] In the process of composite substrate patterning, a large number of sapphire coated substrates are usually used, and control sheets are prepared on the substrate as a process flow. The control sheet is a discarded sapphire flat sheet used to fill the vacant position. Since the vacant position is filled with a positive sheet, it will greatly increase the cost and increase the complexity of the process, so the control sheet is used to fill it, so the control sheet at this position is not used to produce chips. In order to reduce costs, the control sheets are usually taken out for rework after continuous use, and then reused after rework. However, the control sheets used in the composite substrate patterning process in the prior art, after the plasma enhanced chemical vapor deposition process (Plasma Enhanced Chemical Vapor Deposition, PECVD), the deposited film layer acts as a mask layer and is etched during the operation process, and the deposition and etching removal are multiple times, which is costly, and the etching rate of the positive sheet cannot be adjusted, so the intra-chip etching uniformity of the positive sheet used in the chip preparation process cannot be guaranteed. Summary of the invention

[0004] The present invention provides a method for preparing a composite patterned substrate and a method for preparing a control film and a positive film, by setting a positive film and a heterogeneous first control film, and utilizing the different reaction rates of the first control film and the positive film with a preset etching gas, to achieve effective regulation of the etching rate of the positive film, directionally change the intra-film etching uniformity of the positive film, and ensure the etching effect and etching uniformity of the positive film.

[0005] In a first aspect, the present invention provides a method for preparing a composite patterned substrate, comprising:

[0006] Providing a first control film and a positive film; wherein the first control film and the positive film are heterogeneous; and surfaces of the first control film and the positive film both include periodically arranged mask structures;

[0007] The first control sheets and the main sheets are respectively arranged at different preset sheet positions of the tray according to a first preset number, and the first control sheets are arranged adjacent to the main sheets;

[0008] The first control film and the positive film are etched by using a dry etching process and a preset etching gas; wherein the reaction rate of the first control film and the preset etching gas is greater than the reaction rate of the positive film and the preset etching gas.

[0009] Optionally, while providing the first control film and the positive film, the method further includes: providing a second control film; wherein the second control film is homogeneous with the positive film; and the surface of the second control film includes a periodically arranged mask structure;

[0010] The method further comprises: arranging the first control sheets and the main sheets at different preset sheet positions of the tray according to a first preset number, and arranging the first control sheets adjacent to the main sheets, and further comprising: arranging the second control sheets at the remaining preset sheet positions of the tray according to a second preset number, and arranging them adjacent to at least the first control sheets;

[0011] The method adopts a dry etching process and a preset etching gas to etch the first control film and the positive film, and also includes: adopting a dry etching process and a preset etching gas to etch the second control film; wherein the reaction rate of the second control film and the preset etching gas is different from the reaction rate of the positive film and the preset etching gas.

[0012] Optionally, the first control film includes a first flat film substrate and a bonding layer and a first photoresist layer located on one side surface of the first flat film substrate; the second control film includes a second flat film substrate and a second photoresist layer located on one side surface of the second flat film substrate; the positive film includes a third flat film substrate and an amorphous thin film layer and a third photoresist layer located on one side surface of the third flat film substrate;

[0013] The first flat substrate, the second flat substrate and the third flat substrate all have a single crystal structure.

[0014] Optionally, the material of the amorphous thin film layer is the same as that of the first flat substrate.

[0015] Optionally, the thickness of the first flat sheet substrate is H1, the thickness of the second flat sheet substrate is H2, and the thickness of the third flat sheet substrate is H3; 25um≤H1-H3≤50um, 25um≤H2-H3≤50um.

[0016] Optionally, there are multiple preset sheet positions, and the multiple preset sheet positions are evenly arranged on the circumference and center of the tray, and a first preset sheet position is arranged at the center position, and a second preset sheet position is arranged at the circumference position;

[0017] The main film is located at the second preset film position, the first control film is located at the first preset film position and part of the second preset film position and surrounds the main film, and the second control film is located at the remaining second preset film position on the side of the first control film away from the main film.

[0018] Optionally, there are multiple preset sheet positions, and the multiple preset sheet positions are evenly arranged on the circumference and center of the tray, and a first preset sheet position is arranged at the center position, and a second preset sheet position is arranged at the circumference position;

[0019] The main film is located at the second preset film position, the first control film is located at part of the second preset film position and is adjacent to the main film, and the second control film is located at the first preset film position and the remaining second preset film positions.

[0020] In a second aspect, the present invention provides a method for preparing a control film and a positive film in a composite patterned substrate, comprising:

[0021] Providing a first flat sheet substrate, a second flat sheet substrate and a third flat sheet substrate; the first flat sheet substrate and the third flat sheet substrate are homogeneous, and the second flat sheet substrate and the third flat sheet substrate are heterogeneous;

[0022] Pre-treating the first flat substrate, the second flat substrate, and the third flat substrate to change the surface conditions of the first flat substrate, the second flat substrate, and the third flat substrate;

[0023] Forming a first photoresist layer on one side surface of the first flat substrate;

[0024] forming a second photoresist layer on a surface of one side of the second flat substrate;

[0025] forming a third photoresist layer on one side surface of the third flat substrate;

[0026] The first photoresist layer, the second photoresist layer and the third photoresist layer are respectively exposed and developed to form a periodically arranged mask structure on one side surface of the first flat substrate, the second flat substrate and the third flat substrate to form a first control film, a second control film and a positive film.

[0027] Optionally, pre-treating the first flat substrate, the second flat substrate and the third flat substrate to change the surface state of the first flat substrate, the second flat substrate and the third flat substrate comprises:

[0028] Using the SMP solution to clean the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate under first preset conditions to remove metal impurities on the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate;

[0029] The first flat substrate, the second flat substrate and the third flat substrate are annealed under the second preset condition after removing metal impurities, so that the impurity atoms remaining on the surfaces of the first flat substrate, the second flat substrate and the third flat substrate are evenly distributed.

[0030] Optionally, the first preset condition is that the temperature is 120°C-140°C, the pickling time is 700s-900s, the flushing time is 400s-550s, and the spin drying time is 600s-720s;

[0031] The second preset condition is that the heating temperature is 350°C, the heating time is 2°C / min-5°C / min, and the heat treatment time is 1h-2h.

[0032] Optionally, before forming the second photoresist layer on one side surface of the second flat substrate, the method further includes:

[0033] Forming a bonding layer on one side of the second flat sheet substrate by a vapor coating process under a third preset condition;

[0034] A second photoresist layer is formed on one side of the second flat substrate, comprising:

[0035] A second photoresist layer is formed on the surface of the bonding layer away from the second flat substrate.

[0036] Optionally, the third preset condition is a temperature of 150°C and a pressure of 9.5*10 3 Pa-9.7*10 3 Pa, the concentration of the adhesive vapor introduced is greater than 99.7%, and the duration of introducing the adhesive vapor is 1h-1.5h.

[0037] Optionally, before forming the third photoresist layer on one side surface of the third flat substrate, the method further includes:

[0038] An amorphous thin film layer is formed on the surface of one side of the third flat sheet substrate by using a plasma enhanced chemical vapor deposition process;

[0039] A third photoresist layer is formed on one side of the third flat substrate, comprising:

[0040] A third photoresist layer is formed on the surface of the amorphous film layer away from the third flat substrate.

[0041] The technical solution of the present invention provides a first control film and a positive film; wherein the first control film and the positive film are heterogeneous; the surfaces of the first control film and the positive film both include periodically arranged mask structures; the first control film and the positive film are respectively arranged at different preset film positions of the tray according to a first preset number, and the first control film and the positive film are arranged adjacent to each other; a dry etching process is adopted, and a preset etching gas is used to etch the first control film and the positive film; wherein the reaction rate of the first control film with the preset etching gas is greater than the reaction rate of the positive film with the preset etching gas. By using the above method, by setting the positive film and the heterogeneous first control film, and by using the different reaction rates of the first control film and the positive film with the preset etching gas, the etching rate of the positive film is effectively adjusted, the etching uniformity within the positive film is directionally changed, the etching effect and etching uniformity of the positive film are guaranteed, and the production cost is reduced.

[0042] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 A flow chart of a method for preparing a composite patterned substrate provided by an embodiment of the present invention;

[0045] Figure 2 A flow chart of a method for preparing a second composite patterned substrate provided by an embodiment of the present invention;

[0046] Figure 3 A schematic diagram of the structure of a first control sheet provided by an embodiment of the present invention;

[0047] Figure 4 A schematic diagram of the structure of a second control sheet provided by an embodiment of the present invention;

[0048] Figure 5 A schematic structural diagram of a positive film provided by an embodiment of the present invention;

[0049] Figure 6 A schematic structural diagram of an arrangement of a first control sheet, a second control sheet and a main sheet provided in an embodiment of the present invention;

[0050] Figure 7A schematic structural diagram of another arrangement of the first control sheet, the second control sheet and the main sheet provided in an embodiment of the present invention;

[0051] Figure 8 A flow chart of a method for preparing a control film and a positive film in a composite patterned substrate provided by an embodiment of the present invention;

[0052] Fig. 9 A flow chart of another method for preparing a control film and a positive film in a composite patterned substrate provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0053] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0054] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0055] In one embodiment, Figure 1 A flow chart of a method for preparing a composite patterned substrate provided in an embodiment of the present invention is provided. This embodiment can be applied to the case where the etching rate of the positive film needs to be regulated when preparing the composite patterned substrate so that the positive film can achieve a preset etching effect and etching uniformity, such as Figure 1 As shown, the preparation method comprises:

[0056] S110, providing a first control film and a positive film.

[0057] Among them, the first control wafer is heterogeneous with the positive wafer, and the surfaces of the first control wafer and the positive wafer both include periodically arranged mask structures. The first control wafer is a silicon wafer used to monitor the stability and reliability of the equipment during the production process, ensuring the stability of the patterned composite substrate preparation process and the quality of the substrate. The positive wafer is a silicon wafer directly used for the processing of the patterned composite substrate. The positive wafer is the main carrier used in the production of LED chips, and its quality directly affects the performance and yield of the LED chips. Usually, when preparing the first control wafer, the flat wafer substrate of the first control wafer will be thicker than the flat wafer substrate of the positive wafer to ensure that the first control wafer can be reused many times.

[0058] S120, respectively arranging the first control sheets and the main sheets at different preset sheet positions of the tray according to a first preset number, and arranging the first control sheets and the main sheets adjacent to each other.

[0059] The preset film position is a film position pre-set on the tray for setting the control film and the main film. Usually, there are multiple preset film positions.

[0060] Specifically, after the first control film and the main film are prepared, the first control film and the main film need to be respectively arranged at different preset film positions of the tray according to the first preset number. For example, the number of the first control films can be 2, 3, or more than 3, and the number of the main film can be 1. When arranging the first control film and the main film, the first control film needs to be arranged at a position adjacent to the main film, and may surround the main film or not. The specific arrangement method and the number of the first control films can be determined and arranged according to the actual situation, and no specific limitation is made here.

[0061] It should be noted that when determining the arrangement and the first preset number of the first control film and the positive film, the arrangement is carried out to ensure that the etching rate of the positive film reaches the preset etching rate. When the etching rate of the positive film does not reach the preset etching rate, for example, it is higher than the preset etching rate or lower than the preset etching rate, it is necessary to redetermine the number and arrangement of the positive film and the first control film to ensure the etching effect of the positive film.

[0062] S130, using a dry etching process and a preset etching gas to etch the first control wafer and the positive wafer.

[0063] The reaction rate between the first control film and the preset etching gas is greater than the reaction rate between the positive film and the preset etching gas. The dry etching process is a process in semiconductor manufacturing that uses the chemical activity of plasma to remove or etch materials in a specific area to form a preset microstructure, such as a cone structure. The preset etching gas can be boron trichloride or other etching gases.

[0064] Specifically, after the first control film and the positive film are arranged according to the first preset number, the first control film and the positive film need to be etched, that is, a dry etching process is adopted, and a preset etching gas in the dry etching process is utilized. The chloride ions in the preset etching gas chemically react and physically sputter with the first control film and the positive film respectively, so as to achieve the etching effect of the positive film.

[0065] It should be noted that when the preset etching gas reacts chemically with the first control film and the positive film respectively, since the reaction rate of the first control film and the preset etching gas is greater than the reaction rate of the positive film and the preset etching gas, under the same etching environment, the first control film can consume more chloride ions in the preset etching gas, so that the number of chloride ions in the preset etching gas consumed by the positive film is less, thereby suppressing the etching rate of the positive film. In other words, when the etching rate of the positive film is higher than the preset etching rate, the etching rate of the positive film can be suppressed by increasing the number of first control films, so that the etching rate of the positive film is reduced; when the etching rate of the positive film is lower than the preset etching rate, the number of first control films can be reduced to reduce the chloride ions in the preset etching gas absorbed by the first control film, so that more chloride ions react chemically with the positive film, so that the etching rate of the positive film is increased to reach the preset etching rate, and the etching effect of the positive film is guaranteed.

[0066] The technical solution of the embodiment of the present invention is provided by providing a first control sheet and a positive sheet; wherein the first control sheet and the positive sheet are heterogeneous; the surfaces of the first control sheet and the positive sheet both include periodically arranged mask structures; the first control sheet and the positive sheet are respectively arranged at different preset sheet positions of the tray according to a first preset number, and the first control sheet and the positive sheet are arranged adjacent to each other; a dry etching process is adopted, and a preset etching gas is used to etch the first control sheet and the positive sheet; wherein the reaction rate of the first control sheet with the preset etching gas is greater than the reaction rate of the positive sheet with the preset etching gas. By using the above method, by setting the positive sheet and the heterogeneous first control sheet, and by using the different reaction rates of the first control sheet and the positive sheet with the preset etching gas, the etching rate of the positive sheet is effectively adjusted, the etching uniformity within the positive sheet is directionally changed, the etching effect and etching uniformity of the positive sheet are ensured, and the production cost is reduced.

[0067] Figure 2 This is a flow chart of a second method for preparing a composite patterned substrate provided by an embodiment of the present invention. In addition to the above embodiment S110, when providing a first control film and a positive film, this embodiment further adds the following steps:

[0068] Providing a second control sheet; wherein the second control sheet is homogeneous with the positive sheet; and the surface of the second control sheet includes a periodically arranged mask structure;

[0069] Furthermore, in S120, the first control sheets and the main sheets are respectively arranged at different preset sheet positions of the tray according to the first preset number, and the first control sheets are arranged adjacent to the main sheets, and the following steps are added:

[0070] Arrange the second control sheets at the remaining preset sheet positions of the tray according to a second preset number and at least arrange them adjacent to the first control sheets;

[0071] Furthermore, in S130, while the first control wafer and the positive wafer are etched by using a dry etching process and a preset etching gas, the following steps are added:

[0072] The second control film is etched by using a dry etching process and a preset etching gas; wherein the reaction rate between the second control film and the preset etching gas is different from the reaction rate between the positive film and the preset etching gas.

[0073] For details not yet provided in this embodiment, please refer to the above embodiments, which will not be described in detail here.

[0074] like Figure 2 As shown, the preparation method comprises:

[0075] S210, providing a first control film and a positive film, and providing a second control film.

[0076] The second control wafer is homogeneous with the positive wafer, and the surface of the second control wafer includes a periodically arranged mask structure. The second control wafer is a silicon wafer used to monitor the stability and reliability of the machine equipment during the production process to ensure the stability and substrate quality of the patterned composite substrate preparation process.

[0077] S220, respectively arrange the first control sheets and the main sheets at different preset sheet positions of the tray according to a first preset quantity, and arrange the first control sheets adjacent to the main sheets, and arrange the second control sheets at the remaining preset sheet positions of the tray according to a second preset quantity, and arrange them adjacent to at least the first control sheets.

[0078] Specifically, after the first control film and the main film are arranged on the preset film positions, the remaining preset film positions are used to arrange the second control film, that is, the second preset number of the second control film can be actually determined according to the first preset number of the main film and the first control film. Exemplarily, there are 9 preset film positions, 1 main film, and 3 first control films, then the remaining 5 preset film positions are used to set the second control film, that is, the second preset number is 5.

[0079] It should be noted that the second control piece is arranged adjacent to at least the first control piece, and when the etching rate within the positive film is uniform, usually, when setting the second control piece, the second control piece is only set at the remaining preset positions adjacent to the first control piece. When the etching rate within the positive film is uneven, when setting the second control piece, the second control piece can be set at the remaining preset positions adjacent to the positive film and the first control piece, so that the second control piece of the same quality as the positive film can absorb more chloride ions in the preset etching gas, so that the second control piece adjacent to the positive film can reduce the etching rate of the positive film with excessively high local etching rate, thereby ensuring the etching uniformity of the positive film.

[0080] S230, using a dry etching process and a preset etching gas to etch the first control wafer and the positive wafer, and using a dry etching process and a preset etching gas to etch the second control wafer.

[0081] The reaction rate between the second control film and the preset etching gas is different from the reaction rate between the positive film and the preset etching gas.

[0082] Specifically, after the first control film, the positive film and the second control film are arranged, the first control film, the second control film and the positive film need to be etched. In this embodiment, a dry etching process is adopted, and a preset etching gas in the dry etching process is used. The preset etching gas chemically reacts with the first control film, the second control film and the positive film respectively, so as to consume the ions on the first control film, the second control film and the positive film, thereby achieving the etching effect of the positive film.

[0083] It should be noted that when the preset etching gas reacts chemically with the second control piece and the positive piece respectively, since the reaction rate between the second control piece and the preset etching gas is different from the reaction rate between the positive piece and the preset etching gas, the reaction rate between the second control piece and the preset etching gas may be greater than the reaction rate between the positive piece and the preset etching gas, and vice versa, the reaction rate between the second control piece and the preset etching gas may also be less than the reaction rate between the positive piece and the preset etching gas, which can be determined according to actual conditions and is not specifically limited here. When the reaction rate between the second control piece and the preset etching gas is greater than the reaction rate between the positive piece and the preset etching gas, under the same etching environment, the second control piece can consume more chloride ions in the preset etching gas, so that the amount of plasma in the preset etching gas consumed by the positive piece is reduced, thereby suppressing the etching rate of the positive piece. When the reaction rate between the second control piece and the preset etching gas is less than the reaction rate between the positive piece and the preset etching gas, under the same etching environment, the positive piece can consume more chloride ions in the preset etching gas, so that the amount of plasma in the preset etching gas consumed by the second control piece is reduced, thereby improving the etching rate of the positive piece. That is to say, when the etching rate of the positive film is higher than the preset etching rate, the number of second control films can be increased so that the reaction rate of the second control films with the preset etching gas is greater than the reaction rate of the positive film with the preset etching gas, thereby suppressing the etching rate of the positive film and reducing the etching rate of the positive film to reach the preset etching rate; when the etching rate of the positive film is lower than the preset etching rate, the number of second control films can be reduced so that the reaction rate of the second control films with the preset etching gas is lower than the reaction rate of the positive film with the preset etching gas, thereby allowing more chloride ions to chemically react with the positive film, thereby increasing the etching rate of the positive film and reaching the preset etching rate.

[0084] The technical solution of the embodiment of the present invention is to provide a first control sheet, a second control sheet and a positive sheet, and set the second control sheet in the remaining preset sheet positions of the tray according to a second preset number; adopt a dry etching process, and use a preset etching gas to etch the second control sheet; wherein the reaction rate of the second control sheet with the preset etching gas is greater than the reaction rate of the positive sheet with the preset etching gas. By using the above method, by simultaneously setting a second control sheet of the same nature as the positive sheet, and using the different reaction rates of the second control sheet and the positive sheet with the preset etching gas, the etching rate of the positive sheet is effectively adjusted, the etching uniformity within the positive sheet is directionally changed, the etching effect and etching uniformity of the positive sheet are guaranteed, and the production cost is reduced.

[0085] In another alternative embodiment, Figure 3 A schematic diagram of the structure of a first control sheet provided by an embodiment of the present invention, Figure 4 A schematic diagram of the structure of a second control sheet provided by an embodiment of the present invention, Figure 5 A schematic diagram of the structure of a positive film provided by an embodiment of the present invention, referring to Figures 3 to 5 As shown, the first control film 1 includes a first flat film substrate 11 and a bonding layer 12 and a first photoresist layer 13 located on one side surface of the first flat film substrate 11; the second control film 2 includes a second flat film substrate 21 and a second photoresist layer 22 located on one side surface of the second flat film substrate 21; the positive film 3 includes a third flat film substrate 31 and an amorphous thin film layer 32 and a third photoresist layer 33 located on one side surface of the third flat film substrate 31; the first flat film substrate 11, the second flat film substrate 21 and the third flat film substrate 31 are all single crystal structures.

[0086] Optionally, the material of the amorphous thin film layer 32 is the same as that of the first flat substrate 11 .

[0087] Among them, the first photoresist layer 13, the second photoresist layer 22 and the third photoresist layer 33 are all mask layers. By exposing and developing the first photoresist layer 13, the second photoresist layer 22 and the third photoresist layer 33, a periodically arranged mask structure can be formed on the first control film 1, the second control film 2 and the positive film 3 respectively. In this embodiment, the thickness of the first photoresist layer 13 is the same as the thickness of the second photoresist layer 22, but can be the same as or different from the thickness of the third photoresist layer 33. The first flat sheet substrate 11, the second flat sheet substrate 21 and the third flat sheet substrate 31 are all flat substrate materials, such as sapphire substrates. In this embodiment, the material of the first flat sheet substrate 11 can include but is not limited to single crystal silicon dioxide, and the material of the second flat sheet substrate 21 and the third flat sheet substrate 31 can include but is not limited to single crystal aluminum oxide. In addition, since the first flat substrate 31 is a single crystal structure, its surface state is relatively smooth and flat. If the first photoresist layer 13 is directly arranged on the surface of the first flat substrate 11, debonding or uneven adhesive layer may occur. In order to prevent this phenomenon, a bonding layer 12 is arranged between the first flat substrate 11 and the first photoresist layer 13. The bonding layer 12 is used to change the surface state of the first flat substrate 11 so that the first flat substrate 11 and the first photoresist layer 13 are tightly bonded. The amorphous film layer 32 is arranged on one side surface of the third flat substrate 31, and is used to change the maximum incident angle of photons in the incident light, so that more photons can be reflected out, so as to reduce the photons incident on the third flat substrate 31, and improve the light precipitation efficiency and light extraction efficiency of the LED chip. In this embodiment, the material of the amorphous film layer 32 may include but is not limited to amorphous silicon dioxide. It can be seen that the material of the amorphous film layer 32 is the same as that of the first flat substrate 11, both of which are silicon dioxide, so that no other impurity atoms appear during the etching process, and the quality of the composite patterned substrate is guaranteed.

[0088] Specifically, since the first flat substrate 11 and the third flat substrate 31 are heterogeneous, and the second flat substrate 21 and the third flat substrate 31 are homogeneous, that is, the material of the first flat substrate 11 is single-crystalline silicon dioxide, and the materials of the second flat substrate 21 and the third flat substrate 31 are both single-crystalline aluminum oxide, the preset etching gas is boron trichloride, the main element contained in silicon dioxide is silicon, the main element contained in aluminum oxide is aluminum, and there is a difference between the number of outermost nuclear electrons of silicon and aluminum, that is, the number of outermost nuclear electrons of aluminum is 3, the number of outermost nuclear electrons of silicon is 4, and the number of outermost nuclear electrons of the main element chlorine of boron chloride is 7 Therefore, in the process of physical and chemical reactions occurring when etching using a dry etching process, the chloride ions in the preset etching gas that the aluminum ions in the aluminum oxide participate in the chemical reaction are less than the chloride ions in the preset etching gas that the silicon ions in the silicon dioxide absorb. When reacting to form reactants, the Gibbs free energy of the aluminum oxide is less than the Gibbs free energy of the silicon dioxide. That is, there is a difference in the absorption of chloride ions by silicon ions and aluminum ions, which is manifested as a difference in selectivity under the same conditions from a macroscopic perspective. Therefore, the etching rate of the positive film 3 can be precisely controlled by changing the number of the first control film 1 and the second control film 2.

[0089] It should be noted that the second flat substrate 21 and the third flat substrate 31 are made of the same material, so the reaction rate between the second flat substrate 21 and the preset etching gas is the same as the reaction rate between the third flat substrate 31 and the preset etching gas. Under normal circumstances, the first photoresist layer 13, the second photoresist layer 22 and the third photoresist layer 33 will also consume a small amount of chloride ions in the preset etching gas. Therefore, when the etching rate of the positive film 3 is higher than the preset etching rate, the etching rate of the positive film 3 can be suppressed by increasing the thickness of the first photoresist layer 13 and the second photoresist layer 22, or increasing the number of the first control sheets 1, to ensure that the etching rate of the positive film 3 reaches the preset etching rate. When the etching rate of the positive film 3 is lower than the preset etching rate, the etching rate of the positive film 3 can be increased by reducing the thickness of the first photoresist layer 13 and the second photoresist layer 22, or reducing the number of the first control sheets 1, so that more chloride ions in the preset etching gas are absorbed by the positive film 3, ensuring the etching effect of the positive film 3.

[0090] Optional, continue to refer to Figures 3 to 5 The thickness of the first flat substrate 11 is H1, the thickness of the second flat substrate 21 is H2, and the thickness of the third flat substrate 31 is H3; 25um≤H1-H3≤50um, 25um≤H2-H3≤50um.

[0091] Specifically, since the first control wafer 1 and the second control wafer 2 are not used for normal production, after the composite patterned substrate is prepared, the first control wafer 1 and the second control wafer 2 need to be cleaned and recycled to achieve repeated recycling and reduce production costs. Therefore, in order to ensure that the first control wafer 1 and the second control wafer 2 can be recycled for many times, the thickness of the first flat sheet substrate 11 and the second flat sheet substrate 21 needs to be set to ensure the loss of the first control wafer 1 and the second control wafer 2 during the etching process. In this embodiment, 25um≤H1-H3≤50um is set, that is, the thickness of the first flat sheet substrate 11 is 25um to 50um higher than the thickness of the third flat sheet substrate 31. Exemplarily, H1-H3 can be 25um, 30um, 40um, 45um or 50um, which can be determined according to actual conditions and is not specifically limited here. Similarly, 25um≤H2-H3≤50um is set, that is, the thickness of the second flat substrate 21 is 25um to 50um higher than the thickness of the third flat substrate 31. Exemplarily, H2-H3 can be 25um, 30um, 40um, 45um or 50um, which can be determined according to actual conditions and is not specifically limited here.

[0092] In another alternative embodiment, Figure 6 A schematic diagram of a first control sheet, a second control sheet and a positive sheet arrangement method provided by an embodiment of the present invention, referring to Figures 3 to 6 As shown, there are multiple preset film positions, which are evenly arranged on the circumference and center of the tray 4, and a first preset film position is arranged at the center position, and a second preset film position is arranged at the circumference position; the main film 3 is located at the second preset film position, the first control film 1 is located at the first preset film position and part of the second preset film position, and surrounds the main film 3, and the second control film 2 is located at the remaining second preset film positions on the side of the first control film 1 away from the main film 3.

[0093] The preset film positions on the tray 4 are the pre-set film positions for placing the control film 1 (2) and the main film 3, see Figure 6 After the first control piece 1, the second control piece 2 and the main piece 3 are set, the angle between the center of two adjacent first control pieces 1 and the center of the main piece 3 is 67.5°; the angle between the center of two adjacent second control pieces 2 and the center of the main piece 3 is 22.5°.

[0094] Specifically, when the etching rate of the positive film 3 is uniform and the etching rate of the positive film 3 as a whole needs to be regulated, the positive film 3 is set at the second preset film position, referring to Figure 6The position of the bottom positive film 3. Since the etching rate within the positive film 3 is uniform, there is no need to adjust the local etching rate of the positive film 3. Therefore, the first control film 1 can be set all around the positive film 3 to surround the positive film 3 and change the overall etching rate of the positive film 3, that is, the first control film 1 is set at the first preset position in the center of the tray 4 and part of the second preset positions on the circumference. After the first control film 1 and the positive film 3 are set, the second control film 2 is set at the remaining second preset positions on the side of the first control film 1 away from the positive film 3. In this way, during the dry etching process, since the reaction rate of the first control film 1 with the preset etching gas is greater than the reaction rate of the positive film 3 with the preset etching gas, the first control film 1 can suppress the etching rate of the positive film 3. The second control piece 2 will react with the preset etching gas at the same time and absorb the chloride ions in the preset etching gas. Since the second control piece 2 is farther away from the positive film 3 than the first control piece 1, the second control piece 2 has less effect on the etching rate of the positive film 3. When the etching rate of the positive film 3 is regulated, it is mainly achieved by changing the number of the first control pieces 1. The second control piece 2 can play an auxiliary role in regulating the etching rate of the positive film 3 to ensure that the etching rate of the positive film 3 reaches the preset etching rate.

[0095] Understandably, Figure 6 The arrangement of the first control sheet 1, the second control sheet 2 and the positive sheet 3 when the tray 4 includes 9 preset sheet positions is shown only as an example. In actual application, except for one of the second preset sheet positions where the positive sheet 3 is located, the positions of the first control sheet 1 and the second control sheet 2 can be set in the remaining preset sheet positions according to actual conditions. For example, five first control sheets 1 and three second control sheets 2 can be set around the positive sheet 3, or all the remaining eight preset sheet positions can be set with the first control sheets 1 or all the second control sheets 2. The specific arrangement is set based on the etching rate of the positive sheet 3 reaching the preset etching rate, and no specific limitation is made here.

[0096] In another alternative embodiment, Figure 7 A schematic diagram of another arrangement of the first control sheet, the second control sheet and the main sheet provided in an embodiment of the present invention, referring to Figures 3 to 5 , Figure 7 As shown, there are multiple preset film positions, which are evenly arranged on the circumference and center of the tray 4, and a first preset film position is arranged at the center position, and a second preset film position is arranged at the circumferential position; the main film 3 is located at the second preset film position, the first control film 1 is located at part of the second preset film position and is adjacent to the main film 3, and the second control film 2 is located at the first preset film position and the remaining second preset film positions.

[0097] Among them, after the first control piece 1, the second control piece 2 and the main piece 3 are set, the angle between the center of two adjacent first control pieces 1 and the center of the main piece 3 is 135°; the angle between the center of two adjacent second control pieces 2 located at the second preset piece position and the center of the main piece 3 is 22.5°.

[0098] Specifically, when there are defects in the design of the equipment such as the machine or the fixture, the etching rate of the positive film 3 will be uneven, and the local etching rate of the positive film 3 will be too fast. At this time, when the etching rate of the positive film 3 as a whole is regulated, the etching rate of the positive film 3 with a local etching rate that is too fast needs to be reduced at the same time. In this embodiment, the positive film 3 is set at the second preset film position, referring to Figure 7 At the bottommost positive film 3 position, since the local etching rate of the positive film 3 needs to be adjusted, the first control film 1 is arranged around the positive film 3, and the second control film 2 can be arranged at the first preset position in the center of the tray 4, so that the second control film 2 of the same quality as the positive film 3 can absorb more chloride ions in the preset etching gas, weaken the local etching rate of the positive film 3, and ensure the uniformity of the etching rate within the positive film 3. In addition, the etching rate of the positive film 3 as a whole is changed by the first control film 1 to ensure that the etching rate of the positive film 3 reaches the preset etching rate. In addition, the second control film 2 is also arranged at the remaining second preset positions on the side of the first control film 1 away from the positive film 3. In this way, during the etching process, since the reaction rate of the first control film 1 with the preset etching gas is greater than the reaction rate of the positive film 3 with the preset etching gas, the etching rate of the positive film 3 can be suppressed by the first control film 1. The second control piece 2 disposed adjacent to the positive film 3 will react with the preset etching gas while weakening the local etching rate of the positive film 3, absorbing the chloride ions in the preset etching gas, and making the etching rate of the positive film 3 uniform. Since the second control piece 2 located at the second preset position is farther away from the positive film 3 than the first control piece 1, the second control piece 2 has a smaller effect on the etching rate of the positive film 3. When the etching rate of the positive film 3 is regulated, it is mainly achieved by changing the number of the first control pieces 1. The second control piece 2 can play an auxiliary role in regulating the etching rate of the positive film 3, ensuring that the etching rate of the positive film 3 reaches the preset etching rate.

[0099] Understandably, Figure 7 The arrangement of the first control sheet 1, the second control sheet 2 and the positive sheet 3 when the tray 4 includes 9 preset sheet positions is shown only as an example. In actual application, except for one of the second preset sheet positions where the positive sheet 3 is located, the positions of the first control sheet 1 and the second control sheet 2 can be set in the remaining preset sheet positions according to actual conditions. For example, five first control sheets 1 and three second control sheets 2 can be set around the positive sheet 3, or all the remaining eight preset sheet positions can be set with the first control sheets 1 or all the second control sheets 2. The specific arrangement is set based on the etching rate of the positive sheet 3 reaching the preset etching rate, and no specific limitation is made here.

[0100] Figure 8 A flowchart of a method for preparing a control film and a positive film in a composite patterned substrate provided by an embodiment of the present invention, referring to Figure 8 As shown, the preparation method comprises:

[0101] S310, providing a first flat substrate, a second flat substrate and a third flat substrate.

[0102] The first flat sheet substrate and the third flat sheet substrate are homogeneous, and the second flat sheet substrate and the third flat sheet substrate are heterogeneous.

[0103] Specifically, when preparing the control film and the positive film, it is necessary to provide substrates for preparing the first control film, the second control film and the positive film, that is, the first flat film substrate, the second flat film substrate and the third flat film substrate.

[0104] S320, pre-treating the first flat substrate, the second flat substrate and the third flat substrate to change the surface conditions of the first flat substrate, the second flat substrate and the third flat substrate.

[0105] Specifically, after providing the first flat substrate, the second flat substrate and the third flat substrate, the first flat substrate, the second flat substrate and the third flat substrate need to be pretreated. The pretreatment method may include but is not limited to surface cleaning and annealing of the first flat substrate, the second flat substrate and the third flat substrate, so that the surface state of the first flat substrate, the second flat substrate and the third flat substrate after pretreatment can be transformed from an aggregated state to a uniform distribution, thereby providing a basis for the subsequent preparation of a photoresist layer on the first flat substrate, the second flat substrate and the third flat substrate.

[0106] S330, forming a first photoresist layer on a surface of one side of the first flat substrate.

[0107] Specifically, after the surface state of the first flat substrate reaches a uniformly distributed surface state, a uniform photoresist may be coated on one side of the surface of the first flat substrate to form a first photoresist layer.

[0108] S340, forming a second photoresist layer on one side surface of the second flat substrate.

[0109] Specifically, after the surface state of the second flat substrate reaches a uniformly distributed surface state, a uniform photoresist may be coated on one side of the surface of the second flat substrate to form a second photoresist layer.

[0110] S350, forming a third photoresist layer on one side surface of the third flat substrate.

[0111] Specifically, after the surface state of the third flat substrate reaches a uniformly distributed surface state, a uniform photoresist may be coated on one side of the surface of the third flat substrate to form a third photoresist layer.

[0112] S360, respectively exposing and developing the first photoresist layer, the second photoresist layer and the third photoresist layer to form a periodically arranged mask structure on one side surface of the first flat substrate, the second flat substrate and the third flat substrate to form a first control film, a second control film and a positive film.

[0113] Specifically, after forming a first photoresist layer on one side surface of the first flat substrate, forming a second photoresist layer on one side surface of the second flat substrate, and forming a third photoresist layer on one side surface of the third flat substrate, a periodically arranged mask structure needs to be formed. In this embodiment, the formed first photoresist layer, the second photoresist layer, and the third photoresist layer can be exposed and developed according to a preset mask structure, so that a periodically arranged mask structure is formed on one side surface of the first flat substrate, the second flat substrate, and the third flat substrate, respectively, so as to form a first control film, a second control film, and a positive film.

[0114] The technical solution of the embodiment of the present invention comprises the following steps: providing a first flat sheet substrate, a second flat sheet substrate and a third flat sheet substrate; the first flat sheet substrate and the third flat sheet substrate are homogeneous, and the second flat sheet substrate and the third flat sheet substrate are heterogeneous; pre-treating the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate to change the surface state of the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate; forming a first photoresist layer on a surface of one side of the first flat sheet substrate; forming a second photoresist layer on a surface of one side of the second flat sheet substrate; forming a third photoresist layer on a surface of one side of the third flat sheet substrate; respectively exposing and developing the first photoresist layer, the second photoresist layer and the third photoresist layer to form a periodically arranged mask structure on a surface of one side of the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate, respectively, to form a first control sheet, a second control sheet and a positive sheet. By using the above method, a first control film which is homogeneous with the positive film, a second control film which is heterogeneous with the positive film, and a positive film are prepared, which effectively eliminates the fluctuation of film quality caused by the deposition process and the influence of the consistency difference within the film, improves the reuse efficiency of the first control film and the second control film, reduces the production cost, and provides a basis for preparing a composite patterned substrate using the first control film and the second control film.

[0115] It should be noted that after dry etching the first control sheet and the second control sheet, since the first control sheet and the second control sheet will be reused many times, the surface of the first control sheet and the second control sheet after dry etching will usually be cleaned. In this embodiment, the SMP solution formed by mixing sulfuric acid and hydrogen peroxide in a ratio of 4:1 can be used to clean the surface of the first control sheet and the second control sheet under the conditions of setting the pickling temperature to 100°C-120°C, the pickling time to 500s-600s, the flushing time to 400s-550s, and the spin drying time to 600s-720s to remove the impurity particles and by-products generated during the etching process, so as to facilitate subsequent processing and secondary recycling.

[0116] Fig. 9 A flowchart of another method for preparing a control film and a positive film in a composite patterned substrate provided by an embodiment of the present invention. In this embodiment, the specific implementation method of pre-treating the first flat substrate, the second flat substrate and the third flat substrate in S320 in the above embodiment to change the surface state of the first flat substrate, the second flat substrate and the third flat substrate is refined as follows:

[0117] Using the SMP solution to clean the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate under first preset conditions to remove metal impurities on the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate;

[0118] The first flat substrate, the second flat substrate and the third flat substrate are annealed under the second preset condition after removing metal impurities, so that the impurity atoms remaining on the surfaces of the first flat substrate, the second flat substrate and the third flat substrate are evenly distributed.

[0119] Furthermore, before forming the second photoresist layer on the surface of one side of the second flat substrate in S340, the following steps are added:

[0120] A bonding layer is formed on one surface of the second flat sheet substrate by using a vapor coating process under a third preset condition.

[0121] Furthermore, before forming the third photoresist layer on the surface of one side of the third flat substrate in S350, the following steps are added:

[0122] An amorphous thin film layer is formed on the surface of one side of the third flat sheet substrate by using a plasma enhanced chemical vapor deposition process.

[0123] For details not yet provided in this embodiment, please refer to the above embodiments, which will not be described in detail here.

[0124] refer to Fig. 9 As shown, the preparation method comprises:

[0125] S410, providing a first flat substrate, a second flat substrate, and a third flat substrate.

[0126] S420, using the SMP solution to clean the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate under the first preset condition to remove metal impurities on the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate.

[0127] The first preset condition is that the temperature is 120°C-140°C, the pickling time is 700s-900s, the flushing time is 400s-550s, and the spin drying time is 600s-720s. The SMP solution is an acidic solution formed by mixing sulfuric acid and hydrogen peroxide in a ratio of 4:1.

[0128] S430, annealing the first flat substrate, the second flat substrate, and the third flat substrate after removing metal impurities under a second preset condition, so that the impurity atoms remaining on the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate are evenly distributed.

[0129] Among them, the second preset condition is that the heating temperature is 350°C, the heating time is 2°C / min-5°C / min, and the heat treatment time is 1h-2h.

[0130] Specifically, after the second preset condition is set, the first flat substrate, the second flat substrate and the third flat substrate are annealed after the metal impurities are removed, and are allowed to stand and cool after the annealing is completed to ensure that the residual impurity atoms attached to the surfaces of the first flat substrate, the second flat substrate and the third flat substrate after cleaning are changed from an aggregated state to an overall uniformly distributed state, thereby optimizing the surface state and cleanliness of the first flat substrate, the second flat substrate and the third flat substrate, and providing a basis for the subsequent preparation of a photoresist layer.

[0131] S440, forming a first photoresist layer on one side surface of the first flat substrate.

[0132] S450, forming a bonding layer on one side of the second flat sheet substrate by using a vapor coating process under a third preset condition.

[0133] The third preset condition is that the temperature is 150°C and the pressure is 9.5*10 3 Pa-9.7*10 3 Pa, the concentration of the adhesive vapor is greater than 99.7%, and the duration of the adhesive vapor is 1h-1.5h. The vapor coating process is a technology that coats the adhesive layer on the surface of the second flat substrate through a gas medium under specific conditions. In this embodiment, the vapor coating process is a hexamethyldisilazane (HMDS) coating process.

[0134] Specifically, the temperature is set to 150°C and the pressure is set to 9.5*10 3 Pa-9.7*10 3HMDS vapor coating is performed in an environment of Pa. After setting up the coating environment, the second flat substrate is placed in the coating equipment, and hexamethyldisilazane vapor with a binder vapor concentration of >99.7% is introduced. The time for introducing the binder vapor is controlled at 1h-1.5h, so that the binder vapor will form a uniform adhesive layer film on the surface of the second flat substrate to ensure that the adhesive layer is completely cured and attached to the surface of the second flat substrate. The second flat substrate needs to be cooled to an appropriate temperature and left to stand in the air for 2h to make the surface thickness of the second flat substrate more uniform and the surface state better, which is conducive to subsequent photoresist coating.

[0135] S460, forming a second photoresist layer on a surface of the bonding layer away from the second flat substrate.

[0136] Specifically, after the bonding layer is formed, a uniform second photoresist layer may be formed on the surface of the bonding layer away from the second flat substrate by using a coating process or the like.

[0137] S470, forming an amorphous thin film layer on the surface of one side of the third flat sheet substrate by using a plasma enhanced chemical vapor deposition process.

[0138] Among them, the plasma enhanced chemical vapor deposition process (PECVD) is a process that uses low-temperature plasma generated by gas glow discharge to enhance the chemical activity of the reactants and promote chemical reactions between gases, thereby depositing a high-quality coating at a lower temperature. The material of the amorphous thin film layer can be silicon dioxide.

[0139] Specifically, when preparing the positive film, a plasma enhanced chemical vapor deposition process can be used to deposit on the surface of one side of the third flat film substrate, thereby forming an amorphous thin film layer.

[0140] S480, forming a third photoresist layer on a surface of the amorphous thin film layer away from the third flat substrate.

[0141] Specifically, after the amorphous thin film layer is formed, a coating process or the like may be used to coat the surface of the amorphous thin film layer away from the third flat substrate to form a uniform third photoresist layer.

[0142] S490, respectively exposing and developing the first photoresist layer, the second photoresist layer and the third photoresist layer to form a periodically arranged mask structure on one side surface of the first flat substrate, the second flat substrate and the third flat substrate to form a first control film, a second control film and a positive film.

[0143] The technical solution of the embodiment of the present invention is to clean the surface of the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate by using SMP solution under the first preset condition to remove the metal impurities on the surface of the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate; anneal the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate after removing the metal impurities under the second preset condition to make the impurity atoms remaining on the surface of the first flat sheet substrate, the second flat sheet substrate and the third flat sheet substrate uniformly distributed; before forming the second photoresist layer on the surface of one side of the second flat sheet substrate, forming a bonding layer on the surface of one side of the second flat sheet substrate by using a vapor coating process under the third preset condition; before forming the third photoresist layer on the surface of one side of the third flat sheet substrate, forming an amorphous thin film layer on the surface of one side of the third flat sheet substrate by using a plasma enhanced chemical vapor deposition process. Using the above method, the preparation of the first control film, the second control film and the positive film is realized, ensuring that no other impurity atoms are generated during the preparation process, and ensuring the quality of the first control film, the second control film and the positive film.

[0144] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0145] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a composite patterned substrate, characterized in that: include: Providing a first control film and a positive film; wherein the first control film and the positive film are heterogeneous; and surfaces of the first control film and the positive film both include periodically arranged mask structures; The first control sheets and the main sheets are respectively arranged at different preset sheet positions of the tray according to a first preset number, and the first control sheets are arranged adjacent to the main sheets; The first control film and the positive film are etched by using a dry etching process and a preset etching gas; wherein a reaction rate between the first control film and the preset etching gas is greater than a reaction rate between the positive film and the preset etching gas.

2. The preparation method according to claim 1, characterized in that: While providing the first control sheet and the positive sheet, the method further includes: providing a second control sheet; wherein the second control sheet is homogeneous with the positive sheet; and the surface of the second control sheet includes a periodically arranged mask structure; The first control sheets and the main sheets are respectively arranged at different preset sheet positions of the tray according to a first preset number, and the first control sheets are arranged adjacent to the main sheets, and the second control sheets are arranged at the remaining preset sheet positions of the tray according to a second preset number, and are at least arranged adjacent to the first control sheets; While using a dry etching process and a preset etching gas to etch the first control film and the positive film, the method also includes: using the dry etching process and the preset etching gas to etch the second control film; wherein the reaction rate of the second control film with the preset etching gas is different from the reaction rate of the positive film with the preset etching gas.

3. The preparation method according to claim 2, characterized in that: The first control film comprises a first flat substrate and a bonding layer and a first photoresist layer located on one side surface of the first flat substrate; the second control film comprises a second flat substrate and a second photoresist layer located on one side surface of the second flat substrate; the positive film comprises a third flat substrate and an amorphous thin film layer and a third photoresist layer located on one side surface of the third flat substrate; The first flat substrate, the second flat substrate and the third flat substrate are all single crystal structures.

4. The preparation method according to claim 3, characterized in that: The material of the amorphous thin film layer is the same as that of the first flat substrate.

5. The preparation method according to claim 3, characterized in that: The thickness of the first flat sheet substrate is H1, the thickness of the second flat sheet substrate is H2, and the thickness of the third flat sheet substrate is H3; 25um≤H1-H3≤50um, 25um≤H2-H3≤50um.

6. The preparation method according to claim 2, characterized in that: There are multiple preset sheet positions, and the multiple preset sheet positions are evenly arranged on the circumference and center of the tray, and a first preset sheet position is arranged at the center position, and a second preset sheet position is arranged at the circumference position; The positive film is located at the second preset film position, the first control film is located at the first preset film position and part of the second preset film position and surrounds the positive film, and the second control film is located at the remaining second preset film position on the side of the first control film away from the positive film.

7. The preparation method according to claim 2, characterized in that: There are multiple preset sheet positions, and the multiple preset sheet positions are evenly arranged on the circumference and center of the tray, and a first preset sheet position is arranged at the center position, and a second preset sheet position is arranged at the circumference position; The main film is located at the second preset film position, the first control film is located at part of the second preset film position and is adjacent to the main film, and the second control film is located at the first preset film position and the remaining second preset film positions.

8. A method for preparing a control film and a positive film in a composite patterned substrate, characterized in that: include: Providing a first flat sheet substrate, a second flat sheet substrate and a third flat sheet substrate; wherein the first flat sheet substrate and the third flat sheet substrate are homogeneous, and the second flat sheet substrate and the third flat sheet substrate are heterogeneous; Pre-treating the first flat substrate, the second flat substrate, and the third flat substrate to change the surface conditions of the first flat substrate, the second flat substrate, and the third flat substrate; forming a first photoresist layer on one side surface of the first flat substrate; forming a second photoresist layer on one side surface of the second flat substrate; forming a third photoresist layer on one side surface of the third flat substrate; The first photoresist layer, the second photoresist layer and the third photoresist layer are exposed and developed respectively to form a periodically arranged mask structure on the surface of one side of the first flat film substrate, the second flat film substrate and the third flat film substrate respectively, to form a first control film, a second control film and a positive film.

9. The preparation method according to claim 8, characterized in that: Pre-treating the first flat substrate, the second flat substrate, and the third flat substrate to change the surface state of the first flat substrate, the second flat substrate, and the third flat substrate, comprising: Using an SMP solution to clean the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate under first preset conditions to remove metal impurities on the surfaces of the first flat substrate, the second flat substrate, and the third flat substrate; The first flat substrate, the second flat substrate and the third flat substrate are annealed under a second preset condition after removing metal impurities, so that the impurity atoms remaining on the surfaces of the first flat substrate, the second flat substrate and the third flat substrate are evenly distributed.

10. The preparation method according to claim 9, characterized in that: The first preset condition is that the temperature is 120°C-140°C, the pickling time is 700s-900s, the flushing time is 400s-550s, and the drying time is 600s-720s; The second preset condition is that the heating temperature is 350° C., the heating time is 2° C. / min-5° C. / min, and the heat treatment time is 1 h-2 h.

11. The preparation method according to claim 8, characterized in that: Before forming a second photoresist layer on one side surface of the second flat substrate, the method further includes: forming a bonding layer on one side of the second flat sheet substrate by a vapor coating process under a third preset condition; Forming a second photoresist layer on one side of the second flat substrate includes: A second photoresist layer is formed on a surface of the bonding layer away from the second flat substrate.

12. The preparation method according to claim 11, characterized in that: The third preset condition is that the temperature is 150°C and the pressure is 9.5*10 3 Pa-9.7*10 3 Pa, the concentration of the adhesive vapor introduced is greater than 99.7%, and the duration of introducing the adhesive vapor is 1h-1.5h.

13. The preparation method according to claim 8, characterized in that: Before forming the third photoresist layer on one side surface of the third flat substrate, the method further comprises: Using a plasma enhanced chemical vapor deposition process to form an amorphous thin film layer on one side of the third flat sheet substrate; Forming a third photoresist layer on one side of the third flat substrate includes: A third photoresist layer is formed on the surface of the amorphous thin film layer away from the third flat substrate.

Images