Bowl-cup-shaped packaging substrate and LD chip packaging structure

Abstract

The invention provides a bowl-cup type packaging substrate and an LD chip packaging structure. The bowl-cup-shaped packaging substrate is used for packaging an LD chip, and the bowl-cup-shaped packaging substrate comprises a ceramic substrate, a ceramic wall body and a heat conduction film. The ceramic substrate comprises an upper surface and a lower surface, and the upper surface is provided with a die bonding area used for fixing the LD chip. The ceramic wall body surrounds the edge of the ceramic substrate, the ceramic wall body and the ceramic substrate jointly form a bowl cup structure, and the ceramic wall body and the ceramic substrate are of an integrated continuous structure. The heat conduction film is plated on the upper surface of the ceramic substrate, and when the LD chip is fixed in the die bonding area, the LD chip is attached to the heat conduction film and conducts heat transfer through the heat conduction film. The bowl-cup-shaped packaging substrate provided by the invention has good air tightness and relatively good heat transfer and heat dissipation capability.

Description

Technical Field

[0001] The present application relates to the field of semiconductor devices and packaging technology, and in particular to a bowl-cup type packaging substrate and an LD chip packaging structure. Background Art

[0002] Due to the excellent characteristics of semiconductor lasers (LDs), such as good monochromaticity, small size, long life, high power density and high-speed operation, semiconductor lasers have been widely used in laser ranging, laser radar, laser communication, laser simulation weapons, automatic control, testing instruments and even medical cosmetology.

[0003] In recent years, with the improvement of LD chip light efficiency, the application of high-power LD chip packaging has become increasingly widespread. High-power LD chips generate a lot of heat, so they need to be dissipated as quickly as possible to ensure normal operation. The packaging structure of high-power LD chips in the prior art is mostly as follows: Figure 1 As shown, in Figure 1 The packaging substrate uses a copper (Cu) block as a base and ceramics as surrounding barriers. The copper base 101 and the ceramic surrounding barriers 102 are glued together to form a substrate structure.

[0004] because Figure 1 The structure formed by gluing the copper substrate 101 and the ceramic enclosure 102 has a hidden danger of airtightness at the gluing point. Especially in long-term operation, the overall airtightness failure of the package may occur, which may cause the laser chip to fail to perform as expected. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a bowl-cup type packaging substrate and an LD chip packaging structure, which can at least solve the technical problems existing in the background technology.

[0006] In the first aspect, a bowl-cup type packaging substrate is provided for packaging of an LD chip, wherein the bowl-cup type packaging substrate comprises a ceramic substrate, a ceramic wall and a heat conductive film. The ceramic substrate comprises an upper surface and a lower surface, and the upper surface is provided with a solid crystal area for fixing the LD chip. The ceramic wall surrounds the edge of the ceramic substrate and forms a bowl-cup structure together with the ceramic substrate, wherein the ceramic wall and the ceramic substrate are an integral continuous structure. The heat conductive film is provided on the upper surface of the ceramic substrate, wherein when the LD chip is fixed in the solid crystal area, the LD chip is attached to the heat conductive film and heat is transferred through the heat conductive film.

[0007] In the second aspect, the present application provides an LD chip packaging structure, including the cup-shaped packaging substrate in the aforementioned solution, and also including at least one LD chip, at least one beam steering member and a light-transmitting component. The LD chip is fixed in the solid crystal area, the beam steering member is fixed on the upper surface of the ceramic substrate on the light-emitting side of the LD chip and is located on the light-emitting side of the LD chip, and is used to change the direction of the laser beam emitted by the LD chip. The light-transmitting component sealing cover is provided with an opening of the cup-shaped packaging substrate, and is used to receive the beam redirected by the beam steering member 40.

[0008] Compared with the prior art, the beneficial effects of this application include at least:

[0009] 1) In the technical solution of the present application, the ceramic wall and the ceramic base of the bowl-cup type packaging substrate are an integrated continuous structure, and there is no need to glue the base and the wall, and there is no gap, so the airtightness hidden danger between the base and the wall is eliminated from the structural point of view. Furthermore, a heat conduction film is integrated on the ceramic base to receive the heat of the LD chip, so that the heat generated by the LD chip can be dissipated faster to ensure that the LD chip can perform as it should.

[0010] 2) In a further solution, the heat conductive film of the present application is a diamond film or a composite film of diamond and copper, and the difference between its thermal expansion coefficient and the thermal expansion coefficient of the LD chip is small, so the thermal expansion deformation between the heat conductive film and the LD chip is close, reducing the risk of the LD chip being torn. At the same time, the thermal conductivity of the diamond film or the composite film of diamond and copper is high, which can conduct and dissipate the heat generated by the LD chip more quickly.

[0011] 3) In a further solution, the thermal expansion coefficient of the heat conductive film is between that of the ceramic substrate and that of the LD chip, thereby reducing the difference in thermal expansion deformation between the heat conductive film and the LD chip, reducing the risk of the LD chip being torn, and also reducing the difference in thermal expansion deformation between the heat conductive film and the underlying ceramic substrate, thereby reducing the risk of the heat conductive film falling off the surface of the ceramic substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0013] Figure 1 The substrate structure of the LD chip in the prior art;

[0014] Figure 2is a schematic cross-sectional structure diagram of a cup-shaped packaging substrate according to an embodiment of the present application;

[0015] Figure 3 for Figure 2 A partial enlarged view of the middle A;

[0016] Figure 4 It is a schematic diagram of a first top view structure of a bowl-cup type packaging substrate according to an embodiment of the present application;

[0017] Figure 5 Schematic diagram of a second top view structure of a bowl-cup type packaging substrate according to an embodiment of the present application;

[0018] Figure 6 Schematic diagram of a third top view structure of a cup-shaped packaging substrate according to an embodiment of the present application;

[0019] Figure 7 Schematic diagram of a fourth top view structure of a bowl-cup type packaging substrate according to an embodiment of the present application;

[0020] Figure 8 is a cross-sectional structural diagram of a cup-shaped packaging substrate with a metal modification layer according to an embodiment of the present application;

[0021] Fig. 9 Schematic diagram of the cross-sectional structure of a cup-shaped packaging substrate with a first heat transfer channel according to an embodiment of the present application;

[0022] Fig.10 It is a schematic diagram of the cross-sectional structure of a bowl-cup type packaging substrate having a first heat transfer channel and a transverse channel according to an embodiment of the present application;

[0023] Fig.11 Schematic diagram of the cross-sectional structure of a bowl-cup type packaging substrate with a second heat transfer channel according to an embodiment of the present application;

[0024] Fig.12 is a schematic diagram of a cross-sectional structure in a first direction of an LD chip packaging structure according to an embodiment of the present application;

[0025] Fig.13 is a schematic diagram of a cross-sectional structure in a second direction of an LD chip packaging structure according to an embodiment of the present application;

[0026] Fig.14 It is a top view of the LD chip packaging structure after removing the light-transmitting component according to an embodiment of the present application.

[0027] In the figure: 10, bowl-shaped packaging substrate; 11, ceramic base; 12, ceramic wall; 121, first annular table; 122, second annular table; 13, heat conduction film; 14, solid crystal area; 15, heat transfer channel; 16, lateral channel; 17, heat sink; 18, electrode path; 20, LD chip; 30, electrode pad; 40, beam steering component; 50, light-transmitting component; 51, sealing cover; 52, shaping lens; 60, metal wire; 70, metal modification layer; 101, copper base; 102, ceramic enclosure; 103, transition heat sink. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0030] Embodiment 1:

[0031] like Figure 2 As shown, the present embodiment provides a bowl-cup type packaging substrate 10 for packaging an LD chip 20, and the bowl-cup type packaging substrate 10 includes a ceramic substrate 11, a ceramic wall 12 and a heat conductive film 13. The ceramic substrate 11 includes an upper surface and a lower surface, and the upper surface is provided with a solid crystal area 14 for fixing the LD chip 20. The ceramic wall 12 surrounds the edge of the ceramic substrate 11, and together with the ceramic substrate 11 forms a bowl-cup structure, wherein the ceramic wall 12 and the ceramic substrate 11 are an integral continuous structure. The heat conductive film 13 is coated on the upper surface of the ceramic substrate 11, wherein when the LD chip 20 is fixed in the solid crystal area 14, the LD chip 20 is attached to the heat conductive film 13 and heat is transferred through the heat conductive film 13.

[0032] In this embodiment, the ceramic wall 12 and the ceramic base 11 form an integrated continuous structure, which means that there is no gap at the connection between the bottom of the ceramic wall 12 and the ceramic base 11. The two parts are a whole, using the same ceramic material and a ceramic integrated structure formed by the same manufacturing process.

[0033] In the technical solution of this embodiment, the ceramic wall 12 and the ceramic base 11 of the cup-shaped package substrate 10 are an integrated continuous structure, and there is no need to glue the base and the wall, and there is no gap, so the airtightness hidden danger between the base and the wall is eliminated from the structure. Furthermore, a heat conductive film 13 is also integrated on the ceramic base 11 of this embodiment to receive the heat of the LD chip 20, so as to dissipate the heat generated by the LD chip 20 as much as possible, so as to ensure that the LD chip 20 can play its due performance.

[0034] exist Figure 1 In the prior art solution, the LD chip is directly attached to the copper substrate 101. Since the copper substrate 101 has a large thermal expansion coefficient, which does not match the thermal expansion coefficient of the LD chip, stress mismatch problems are likely to occur during use, which may cause chip tearing and affect the performance of the LD chip. Figure 1 As shown, in the prior art, a transition heat sink 103 made of aluminum nitride ceramics, beryllium oxide ceramics, silicon carbide ceramics, etc. is usually placed between the LD chip and the copper substrate 101 to alleviate the stress mismatch problem. The thickness of the transition heat sink 103 is relatively thick, which increases the thermal resistance and thus affects the heat dissipation effect of the LD chip.

[0035] In this embodiment, the thermal conductivity of the heat conducting film 13 of the cup-shaped package substrate 10 is ≥800 W / m·K, so that the heat of the LD chip 20 can be effectively transferred and diffused.

[0036] Furthermore, the heat conducting film 13 may be a diamond film, a composite film combining diamond and copper, a graphene film, etc. The diamond film may be manufactured by CVD, PVDD, MPCVD, etc.

[0037] In one solution, the heat conducting film 13 of this embodiment is a diamond film, and its thermal expansion coefficient is about 1μm / mK. Compared with copper, the difference in thermal expansion coefficient between the diamond film of this embodiment and the LD chip 20 has been greatly reduced, so the diamond film can effectively reduce the stress mismatch problem and reduce the risk of chip tearing caused by stress mismatch. At the same time, since the thermal conductivity of the diamond film is as high as 1800W / mK and above, the heat of the LD chip 20 can be effectively and timely transferred and dissipated.

[0038] In another embodiment, the heat conducting film 13 of this embodiment is a composite film of diamond and copper, and its thermal expansion coefficient is 5.55μm / mK, which is smaller than the thermal expansion coefficient of the LD chip 20, so the effect of reducing stress mismatch is more obvious, thereby effectively reducing the risk of chip tearing caused by stress mismatch. At the same time, since the thermal conductivity of the composite film of diamond and copper is above 800W / mK, it can also effectively transfer and dissipate the heat of the LD chip 20.

[0039] In this embodiment, if Figure 2 As shown, the LD chip 20 is flip-chip packaged, that is, the P pole faces downward and the N pole faces upward, so that the light-emitting surface of the LD chip 20 is close to the heat-conducting film 13, thereby achieving a better heat dissipation effect. At the same time, the LD chip 20 is exposed to the heat-conducting film 13 to ensure that the light spot transmission is not blocked.

[0040] like Figure 3 As shown, after the light from the LD chip 20 is emitted at a predetermined horizontal divergence angle, there will be an elliptical light spot at the position of the beam steering component 40 used for beam steering. The elliptical light spot has a long side L1 and a short side L2. The thickness H4 of the heat conductive film 13 satisfies H4>L1 / 2, thereby ensuring that the light spot is completely transmitted to the beam steering component 40, and the light spot will not be blocked by the ceramic substrate 11, thereby reducing the energy loss caused by blocking.

[0041] In this embodiment, the thickness of the heat conductive film 13 can be only 30um to 1mm, such as 30um, 40um, 50um, 60um, 0.1mm, 0.3mm, 0.5mm, 1mm, etc. Reducing the thickness can also reduce the thermal resistance. Figure 1 The thermal resistance calculation is compared between the prior art and the solution of this embodiment.

[0042] exist Figure 1 In the prior art, the thickness of the copper substrate 101 is H1, and the thermal conductivity of the copper substrate 101 is λ cu About 398W / mK, the thickness of the transition heat sink 103 is H2, and the thermal conductivity of the transition heat sink 103 made of aluminum nitride ceramics, beryllium oxide ceramics, silicon carbide ceramics, etc. is λ 过渡 It is about 200W / mK to 300W / mK. For the convenience of calculation, λ is taken here. cu =400W / mK, take λ 过渡 =300W / mK, the thermal resistance of the LD chip is R chip ,but Figure 1 The thermal resistance R of the corresponding structure a for:

[0043]

[0044] In the technical solution of this embodiment, Figure 2 As shown, the thickness of the ceramic substrate 11 is H3, and the thermal conductivity λ of the ceramic substrate 11 made of ALN material is 陶瓷 About 310W / mK. For the convenience of calculation and comparison, take λ 陶瓷 =300W / mK, the thickness of the heat conductive film 13 is H4, and the thermal conductivity λ of the heat conductive film 13 is 薄膜is about 2000W / mK, and the thermal resistance of the LD chip 20 is R chip , the thermal resistance R after the cup-shaped package substrate 10 of this embodiment fixes the LD chip 20 b for:

[0045]

[0046] Since the heat conducting film 13 of the present embodiment is a diamond film, a composite film of diamond and copper, etc., which has extremely high thermal conductivity, the thickness H4 of the heat conducting film 13 is much thinner than that of a conventional heat sink, that is, H4 is much smaller than H2. The heat conducting film 13 of the present embodiment has excellent heat dissipation characteristics: on the one hand, the heat concentrated on the PN junction of the LD chip 20 can be evenly and quickly diffused along the film surface; on the other hand, the heat can also be conducted out in a direction perpendicular to the film.

[0047] Because the heat conduction film 13 of this embodiment plays a major role in heat dissipation, the thickness of the ceramic substrate 11 of this embodiment can be less than the thickness of the original copper substrate, that is, H3 is less than H1. Further, the sum of the thicknesses of the ceramic substrate 11 and the heat conduction film 13 is less than the sum of the thicknesses of the copper substrate and the conventional heat sink, that is, H3+H4 b It will also be lower.

[0048] The inventors have found in many experiments that the maximum surface temperature of the LD chip with the ALN ceramic diamond-plated thin film material as the substrate is always lower than the maximum surface temperature of the LD chip with the copper as the substrate.

[0049] In this embodiment, the thermal expansion coefficient of the heat conductive film 13 can be between the thermal expansion coefficient of the ceramic substrate 11 and the thermal expansion coefficient of the LD chip 20, thereby reducing the difference in thermal expansion deformation between the heat conductive film 13 and the LD chip 20, reducing the risk of the LD chip 20 being torn, and the thermal expansion deformation of the heat conductive film 13 itself and the thermal expansion deformation of the ceramic substrate 11 will not differ too much, and can also better ensure the close fit between the heat conductive film 13 and the ceramic substrate 11.

[0050] In this embodiment, the area where the heat conductive film 13 is located completely covers the overlapping area of ​​the LD chip 20 and the solid crystal area 14. The area coated with the heat conductive film 13 can be exactly the same as the overlapping area of ​​the LD chip 20 and the solid crystal area 14, or it can be Figure 4 As shown, the area coated with the heat conductive film 13 is larger than the overlapping area between the LD chip 20 and the die-bonding area 14 , so as to at least ensure that the heat generated by the LD chip 20 itself can be transferred to the heat conductive film 13 in time.

[0051] Furthermore, in this embodiment, if Figure 5 ​and Figure 6 As shown, the area where the heat conductive film 13 is located completely covers the solid crystal area 14. Figure 5 In the embodiment, the heat conducting film 13 may be located in the same region as the solid crystal region 14, or may be located in the same region as the solid crystal region 14. Figure 6 As shown, the area coated with the heat conductive film 13 is larger than the solid crystal area 14, so that while ensuring that the heat generated by the LD chip 20 itself can be transferred to the heat conductive film 13 in time, the heat can also be quickly diffused along the surface of the film with the help of the heat conductive film 13.

[0052] Furthermore, in this embodiment, if Figure 7 As shown, the area where the heat conductive film 13 is located completely covers the upper surface of the ceramic substrate 11, so that the surface area of ​​the heat conductive film 13 is maximized to achieve a better heat dissipation effect.

[0053] In this embodiment, if Figure 8 As shown, the ceramic substrate 11 may also include a metal modification layer 70 coated on the upper surface of the heat conductive film 13, and the area coated with the metal modification layer 70 completely covers the overlapping area of ​​the LD chip 20 and the solid crystal area 14 to achieve direct eutectic of the LD chip 20 on the ceramic substrate 11.

[0054] like Fig. 9 and Fig.11 As shown, a plurality of heat transfer channels 15 may be provided in the ceramic substrate 11. The heat transfer channel 15 includes a first end and a second end. The first end of the heat transfer channel 15 extends to contact the lower surface of the heat conductive film 13 to form a heat transfer passage for better heat transfer and heat dissipation.

[0055] Furthermore, the heat transfer channel 15 is formed in the ceramic substrate 11 using the same material as the heat conduction film 13 , or the heat transfer channel 15 is formed in the ceramic substrate 11 using copper material.

[0056] like Fig. 9 As shown, in the first embodiment of the heat transfer channel 15 , the second end of the heat transfer channel 15 extends into the ceramic substrate 11 and does not pass through the ceramic substrate 11 , which can still effectively ensure the airtightness of the entire cup-shaped packaging substrate 10 .

[0057] like Fig.10 As shown, a transverse channel 16 is provided in the ceramic substrate 11 , and the transverse channel 16 connects all the heat transfer channels 15 in sequence. The transverse channel 16 is made of the same material as the heat transfer channel 15 , and the transverse channel 16 further improves the heat transfer and heat dissipation effect.

[0058] like Fig.11As shown, in the second embodiment of the heat transfer channel 15, the second end of the heat transfer channel 15 extends to pass through the lower surface of the ceramic substrate 11. Further, a heat sink 17 is provided on the lower surface of the ceramic substrate 11, and the heat sink 17 contacts the second end of the heat transfer channel 15 to form a heat transfer passage, thereby utilizing the heat sink 17 located outside the ceramic substrate 11 to further accelerate heat dissipation.

[0059] The heat dissipation plate 17 is made of the same material as the heat conductive film 13 , or the heat dissipation plate 17 is made of copper.

[0060] Embodiment 2:

[0061] like Figure 12 to Figure 14 As shown, this embodiment provides an LD chip packaging structure, including the bowl-cup type packaging substrate 10 in Embodiment 1, and also including at least one LD chip 20, at least one beam steering member 40 and a light-transmitting component 50. Among them, the lower surface of the bowl-cup type packaging substrate 10 is provided with an electrode pad 30, the LD chip 20 is fixed in the solid crystal area 14, the electrode of the LD chip 20 is connected to the electrode pad 30 circuit, the beam steering member 40 is fixed on the upper surface of the ceramic substrate 11 on the light-emitting side of the LD chip 20, and is used to change the direction of the laser beam emitted by the LD chip 20, and the light-transmitting component 50 seals the opening of the bowl-cup type packaging substrate 10 and is used to collect and collimate the light beam passing through the beam steering member 40.

[0062] It should be noted that one or more LD chips 20 can be fixed in the solid crystal area 14 of the ceramic base 11 of the bowl-shaped packaging substrate 10. When fixing multiple LD chips 20, a beam steering component 40 can be used to achieve the steering of the light beams of multiple LD chips 20, or a separate beam steering component 40 can be configured for each LD chip 20.

[0063] After using the LD chip packaging structure of the cup-shaped packaging substrate 10 in Example 1, the overall airtightness can be effectively improved, and the heat dissipation effect of the LD chip 20 can also be significantly improved.

[0064] In this embodiment, if Fig.13 and Fig.14As shown, the LD chip 20 can be fixed in the die-bonding area 14 in a normal manner; the electrode pad 30 is arranged on the lower surface of the ceramic wall 12 of the cup-shaped package substrate 10. The upper end of the ceramic wall 12 is configured as a step structure, and the step structure includes a first annular table 121 and a second annular table 122. The second annular table 122 is located inside the first annular table 121. The first annular table 121 is higher than the second annular table 122. The first annular table 121 is used for sealing connection with the lower surface of the light-transmitting component 50. The first annular table 121 is provided with an electrical connection area. The ceramic wall 12 is provided with an electrode path 18 for electrically connecting the electrical connection area with the electrode pad 30. The electrode of the LD chip 20 is connected to the electrical connection area circuit through a metal wire 60.

[0065] like Fig.12 and Fig.13 As shown, the light-transmitting component 50 includes a transparent sealing cover plate 51 and a shaping lens 52. The sealing cover plate 51 is covered on the top end surface of the ceramic wall 12 to close the opening of the bowl-shaped packaging substrate 10. The sealing cover plate 51 is used to transmit the light beam. The shaping lens 52 is arranged on the upper side of the sealing cover plate 51 to collect and collimate the light beam passing through the light beam steering member.

[0066] The above are only exemplary embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A cup-shaped packaging substrate (10), characterized in that: For packaging of LD chips, the cup-shaped packaging substrate (10) comprises: A ceramic substrate (11) comprising an upper surface and a lower surface, wherein the upper surface is provided with a crystal fixing area (14) for fixing an LD chip (20); A ceramic wall (12) surrounds the edge of the ceramic base (11) and forms a bowl-cup structure together with the ceramic base (11); wherein the ceramic wall (12) and the ceramic base (11) are an integrated continuous structure; A heat conducting film (13) is arranged on the upper surface of the ceramic substrate (11); When the LD chip (20) is fixed on the crystal bonding area (14), the LD chip (20) is attached to the heat conductive film (13) and heat is transferred through the heat conductive film (13).

2. The cup-shaped package substrate according to claim 1, characterized in that: The area where the heat conductive film (13) is located completely covers the overlapping area between the LD chip (20) and the crystal bonding area (14).

3. The cup-shaped package substrate according to claim 2, characterized in that: The area where the heat conductive film (13) is located completely covers the crystal fixing area (14).

4. The cup-shaped package substrate according to claim 3, characterized in that: The area where the heat conductive film (13) is located completely covers the upper surface of the ceramic substrate (11).

5. The cup-shaped package substrate according to claim 2, characterized in that: A plurality of heat transfer channels (15) are arranged in the ceramic substrate (11), wherein the heat transfer channels (15) comprise a first end and a second end, and the first end of the heat transfer channel (15) extends to contact the lower surface of the heat conductive film (13) to form a heat transfer passage.

6. The cup-shaped package substrate according to claim 5, characterized in that: The heat transfer channel (15) is formed in the ceramic substrate (11) using the same material as the material used to make the heat conduction film (13), or the heat transfer channel (15) is formed in the ceramic substrate (11) using copper material.

7. The cup-shaped package substrate according to claim 6, characterized in that: The second end of the heat transfer channel (15) extends into the ceramic substrate (11) and does not pass through the ceramic substrate (11).

8. The cup-shaped package substrate according to claim 7, characterized in that: A transverse channel (16) is provided in the ceramic substrate (11), the transverse channel (16) sequentially connecting all the heat transfer channels (15), and the transverse channel (16) is made of the same material as the heat transfer channels (15).

9. The cup-shaped package substrate according to claim 6, characterized in that: The second end of the heat transfer channel (15) extends to pass through the lower surface of the ceramic substrate (11).

10. The cup-shaped package substrate according to claim 9, characterized in that: A heat dissipation plate (17) is provided on the lower surface of the ceramic substrate (11), and the heat dissipation plate (17) is in contact with the second end of the heat transfer channel (15) to form a heat transfer passage.

11. The cup-shaped package substrate according to claim 10, characterized in that: The heat dissipation plate (17) is made of the same material as the heat conduction film (13), or the heat dissipation plate (17) is made of copper.

12. The cup-shaped packaging substrate according to any one of claims 1 to 11, characterized in that: The thermal conductivity of the heat-conducting film (13) is ≥800 W / m·K.

13. The cup-shaped package substrate according to claim 12, characterized in that: The heat conduction film (13) is one of a diamond film, a graphene film and a composite film combining diamond and copper.

14. The cup-shaped package substrate according to claim 13, characterized in that: The thermal expansion coefficient of the heat conductive film (13) is between the thermal expansion coefficient of the ceramic substrate (11) and the thermal expansion coefficient of the LD chip (20).

15. An LD chip packaging structure, characterized in that: include: A cup-shaped packaging substrate (10) comprising: A ceramic substrate (11) comprising an upper surface and a lower surface, wherein the upper surface is provided with a crystal fixing area (14) for fixing an LD chip (20); A ceramic wall (12) surrounds the edge of the ceramic base (11) and forms a bowl-cup structure together with the ceramic base (11); wherein the ceramic wall (12) and the ceramic base (11) are an integrated continuous structure; A heat conducting film (13) is arranged on the upper surface of the ceramic substrate (11); When the LD chip (20) is fixed on the crystal bonding area (14), the LD chip (20) is attached to the heat conductive film (13) and heat is transferred through the heat conductive film (13); The LD chip packaging structure also includes: At least one LD chip (20) is fixed on the die-bonding area (14); At least one beam steering member (40) is fixed on the upper surface of the ceramic substrate (11) and is located on the light-emitting side of the LD chip (20), and is used to change the direction of the laser beam emitted by the LD chip (20); The light-transmitting component (50) covers the opening of the cup-shaped packaging substrate (10) and is used to receive the light beam redirected by the light beam redirecting component (40).

16. The LD chip packaging structure according to claim 15, characterized in that: The LD chip (20) is fixed on the crystal bonding area (14); an electrode pad (30) is provided on the lower surface of the cup-shaped packaging substrate (10); The upper end of the ceramic wall (12) is configured as a step structure, the step structure comprising a first annular table surface (121) and a second annular table surface (122), the second annular table surface (122) being located inside the first annular table surface (121), and the first annular table surface (121) being higher than the second annular table surface (122); The first annular table surface (121) is used for sealing connection with the lower surface of the light-transmitting component (50); The first annular table (121) is provided with an electrical connection area, the ceramic wall (12) is provided with an electrode path (18) for electrically connecting the electrical connection area with the electrode pad (30), and the electrode of the LD chip (20) is connected to the electrical connection area circuit via a metal wire (60).

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