Imaging device and manufacturing method thereof

Abstract

A method of manufacturing an imaging device (1) includes forming a photoelectric conversion film (107) such that a ratio of an overlapping area of the photoelectric conversion film (107) and a support substrate (190) in a plan view to an area of the support substrate (190) in the plan view is greater than 0% and less than 100%. The manufacturing method includes reducing an area of the photoelectric conversion film (107) in plan view by a first etching.

Description

Technical Field

[0001] The present disclosure relates to an imaging device and a method for manufacturing the same. Background Art

[0002] An example of an imaging device is described in Patent Document 1. Patent Document 1 describes forming a photoelectric conversion film by a coating method and then performing dry etching.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2006-32714 Summary of the invention

[0006] The present disclosure realizes an imaging device having high reliability.

[0007] The present disclosure provides a method for manufacturing a camera device, comprising:

[0008] forming a photoelectric conversion film so that a ratio of an overlapping area of ​​the photoelectric conversion film and the support substrate in a plan view relative to an area of ​​the support substrate in a plan view is greater than 0% and less than 100%; and

[0009] The first etching reduces the area of ​​the photoelectric conversion film in a plan view.

[0010] The technology involved in the present disclosure is suitable for realizing an imaging device with high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a plan view of the imaging device according to the first embodiment.

[0012] Figure 2 It is a cross-sectional view of the imaging device according to the first embodiment.

[0013] Figure 3 It is a cross-sectional view of the imaging device according to the first embodiment.

[0014] Figure 4A It is an enlarged cross-sectional view of the imaging device according to the first embodiment.

[0015] Figure 4B It is an enlarged cross-sectional view of the imaging device according to the first embodiment.

[0016] Figure 4C It is an enlarged cross-sectional view of the imaging device according to the first embodiment.

[0017] Figure 4D It is an enlarged cross-sectional view of the support substrate according to the first embodiment.

[0018] Figure 4E It is an enlarged plan view of the imaging device according to the first embodiment.

[0019] Figure 5 This is an illustration of camera recording.

[0020] Fig. 6A It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0021] Figure 6B It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0022] Figure 6C It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0023] Fig.6D It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0024] Fig. 6E It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0025] Fig. 6F It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0026] Figure 6G It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0027] Figure 6H It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0028] Fig.6I It is a process explanation diagram of the manufacturing method involved in the first embodiment. Figure 6J It is a process explanation diagram of the manufacturing method involved in the first embodiment. Figure 6K It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0029] Figure 6L It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0030] Figure 6M It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0031] Figure 6N It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0032] Fig.6O It is a process explanation diagram of the manufacturing method involved in the first embodiment.

[0033] Figure 7 This is a flowchart for explaining the manufacturing method according to the first embodiment.

[0034] Figure 8 This is a schematic diagram of a camera system according to the second embodiment.

[0035] Fig. 9A It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0036] Fig. 9B It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0037] Fig. 9C It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0038] Fig.9D It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0039] Fig.9E It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0040] Fig.9F It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0041] Figure 9G It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0042] Figure 9H It is a process explanation diagram of the manufacturing method involved in the third embodiment.

[0043] Fig.10 This is a flowchart for explaining the manufacturing method involved in the third embodiment. DETAILED DESCRIPTION

[0044] (Insights of the inventors)

[0045] When manufacturing an imaging device, it is considered to form a photoelectric conversion film in the entire region overlapping with the supporting substrate in a plan view, and then etch it. In this case, a wide portion of the photoelectric conversion film is removed during etching, and a large amount of etching residue may be generated. This may lead to a reduction in the reliability of the manufactured imaging device. In addition, the coupling force between the photoelectric conversion film and the supporting substrate is a weaker force such as the van der Waals force, and it is preferable to reduce the film forming stress applied to the substrate. Therefore, the inventors studied a technology suitable for realizing an imaging device with high reliability.

[0046] (Overview of one embodiment of the present disclosure)

[0047] A method for manufacturing an imaging device according to a first aspect of the present disclosure includes:

[0048] forming a photoelectric conversion film so that a ratio of an overlapping area of ​​the photoelectric conversion film and the support substrate in a plan view relative to an area of ​​the support substrate in a plan view is greater than 0% and less than 100%; and

[0049] The first etching reduces the area of ​​the photoelectric conversion film in a plan view.

[0050] According to the first embodiment, the reduction in the area of ​​the photoelectric conversion film caused by the first etching can be suppressed, and the generation of etching residues can be suppressed. In addition, the film forming stress applied to the substrate can be reduced. Therefore, the technology involved in the first embodiment is suitable for realizing a camera device with high reliability.

[0051] In a second aspect of the present disclosure, for example, in the manufacturing method according to the first aspect,

[0052] When forming the photoelectric conversion film, a shadow mask may be used.

[0053] According to the second aspect, it is easy to control the overlapping area.

[0054] In a third aspect of the present disclosure, for example, in the manufacturing method according to the first aspect or the second aspect,

[0055] A ratio of the area reduced by the first etching to the area of ​​the support substrate in a plan view may be greater than 0% and equal to or less than 20%.

[0056] According to the third aspect, the generation of etching residues can be suppressed.

[0057] In a fourth aspect of the present disclosure, for example, in the production method according to any one of the first to third aspects,

[0058] The support substrate may include a semiconductor substrate, a diffusion region provided on the semiconductor substrate, and a pixel electrode electrically connected to the diffusion region.

[0059] The first etching may be performed so that a portion of the photoelectric conversion film that overlaps with the pixel electrode in a plan view remains.

[0060] According to the fourth aspect, it is possible to manufacture an imaging device in which the pixel electrode and the photoelectric conversion film overlap in a plan view.

[0061] In a fifth aspect of the present disclosure, for example, in the manufacturing method according to the fourth aspect,

[0062] The support substrate may further include a connection electrode electrically separated from the pixel electrode.

[0063] The first etching may be performed so as to remove a portion of the photoelectric conversion film that overlaps with the connection electrode in a plan view.

[0064] According to the fifth aspect, it is possible to manufacture an imaging device in which the connection electrode and the photoelectric conversion film do not overlap in a plan view.

[0065] In a sixth aspect of the present disclosure, for example, in the production method according to any one of the first to fifth aspects,

[0066] In the first etching, an insulating film mask may be used.

[0067] The insulating film mask is difficult to be etched. Therefore, according to the sixth aspect, the generation of etching residues can be suppressed.

[0068] In a seventh aspect of the present disclosure, for example, in the production method according to any one of the first to sixth aspects,

[0069] The photoelectric conversion film is formed above the support substrate so that the photoelectric conversion film and a predetermined area of ​​the support substrate do not overlap in a plan view.

[0070] The manufacturing method may also include:

[0071] forming a specific insulating film so that the specific insulating film includes a first insulating portion and a second insulating portion, the first insulating portion being located above the specified region and overlapping the specified region in a plan view, and the second insulating portion being located above the photoelectric conversion film and overlapping the photoelectric conversion film in a plan view; and

[0072] By the second etching, a portion of the specific insulating film located between the first insulating portion and the second insulating portion is removed to form a first insulating film corresponding to the first insulating portion and a second insulating film corresponding to the second insulating portion.

[0073] According to the seventh aspect, in the region overlapping with the prescribed region in the plan view, the first insulating film which does not overlap with the photoelectric conversion film in the plan view can be formed without the operation of withdrawing the photoelectric conversion film. In addition, the second insulating film which overlaps with the photoelectric conversion film in the plan view can be formed. Furthermore, by forming the specific insulating film and the second etching, the first insulating film and the second insulating film can be formed at the same time.

[0074] In an eighth aspect of the present disclosure, for example, in the production method according to any one of the first to seventh aspects,

[0075] The photoelectric conversion film is formed above the support substrate.

[0076] The manufacturing method may also include:

[0077] forming a counter electrode so that a ratio of an overlapping area of ​​the counter electrode and the supporting substrate in a plan view to an area of ​​the supporting substrate in a plan view is greater than 0% and less than 100%, the counter electrode is located above the photoelectric conversion film, and the counter electrode overlaps the photoelectric conversion film in a plan view; and

[0078] The third etching reduces the area of ​​the counter electrode in a plan view.

[0079] According to the eighth aspect, it is possible to suppress the reduction in area of ​​the counter electrode due to the third etching and suppress the generation of etching residues.

[0080] In a ninth aspect of the present disclosure, for example, the manufacturing method according to any one of the first to eighth aspects may further include:

[0081] After forming a structure in which the photoelectric conversion film is located above the supporting substrate, the counter electrode is located above the photoelectric conversion film, the counter electrode overlaps with the photoelectric conversion film in a plan view, the first insulating film is located above the supporting substrate, the first insulating film is separated from the photoelectric conversion film and the counter electrode in a plan view, the second insulating film is located above the counter electrode, and the second insulating film overlaps with the counter electrode in a plan view, a third etching is performed,

[0082] The third etching may also include:

[0083] etching to reduce the area of ​​the counter electrode in a plan view by using the second insulating film as a mask; and

[0084] The first insulating film and the photoelectric conversion film are used as masks to form an etching process for forming a first recess in the support substrate.

[0085] According to the ninth aspect, the first recess can be formed while reducing the area of ​​the counter electrode in a plan view.

[0086] In a tenth aspect of the present disclosure, for example, in the production method according to any one of the first to ninth aspects,

[0087] The support substrate may also include a connecting electrode,

[0088] The manufacturing method may also include: after forming a structure in which the photoelectric conversion film is located above the connecting electrode and the photoelectric conversion film overlaps with the connecting electrode in a plan view, and the opposing electrode is located above the photoelectric conversion film and the opposing electrode overlaps with the photoelectric conversion film in a plan view, removing a portion of the opposing electrode that overlaps with the connecting electrode in a plan view by a third etching having a higher selectivity for the opposing electrode than for the photoelectric conversion film,

[0089] After the third etching, the first etching may be performed so as to remove a portion of the photoelectric conversion film that overlaps with the connection electrode in a plan view.

[0090] According to the tenth aspect, the connection electrode can be protected by the photoelectric conversion film during the third etching.

[0091] In the 11th aspect of the present disclosure, for example, in the production method according to any one of the 1st to 10th aspects,

[0092] The photoelectric conversion film may be formed at a position above the support substrate so that the photoelectric conversion film and a predetermined area of ​​the support substrate do not overlap in a plan view.

[0093] The manufacturing method may also include:

[0094] forming a specific film body so that the specific film body includes a first film portion and a second film portion, the first film portion being located above the specified region and overlapping the specified region in a plan view, and the second film portion being located above the photoelectric conversion film and overlapping the photoelectric conversion film in a plan view; and

[0095] By the fourth etching, a middle portion of the specific film body located between the first film portion and the second film portion is removed to form a first film body corresponding to the first film portion and a second film body corresponding to the second film portion.

[0096] According to the eleventh embodiment, in the region overlapping with the prescribed region in the plan view, the first film body that does not overlap with the photoelectric conversion film in the plan view can be formed without the operation of withdrawing the photoelectric conversion film. In addition, the second film body that overlaps with the photoelectric conversion film in the plan view can be formed. Furthermore, by forming the specific film body and the fourth etching, the first film body and the second film body can be formed at the same time.

[0097] In a twelfth aspect of the present disclosure, for example, in the manufacturing method according to the eleventh aspect,

[0098] The fourth etching may form a second recessed portion in a portion of the support substrate that overlaps with the middle portion in a plan view.

[0099] According to the twelfth aspect, the second recessed portion can be formed while forming the first film body and the second film body.

[0100] An imaging device according to a thirteenth aspect of the present disclosure includes:

[0101] A supporting substrate having a first recess;

[0102] a first insulating film located above the support substrate; and

[0103] The photoelectric conversion film is located above the supporting substrate.

[0104] A first continuous surface is provided at a position separated from the photoelectric conversion film in a plan view, and the first continuous surface includes a first dividing surface that divides the first recessed portion and a side surface of the first insulating film.

[0105] The first recessed portion can prevent the movement of moisture propagating on the upper surface of the support substrate. Therefore, the technology according to the thirteenth aspect is suitable for realizing an imaging device with high reliability.

[0106] In a 14th aspect of the present disclosure, for example, the imaging device according to the 13th aspect may further include at least one film.

[0107] The at least one film may include a portion located in the first recess.

[0108] In the fourteenth aspect, the film has a portion located in the first recess. This can improve the adhesion between the support substrate and the film. Improved adhesion can suppress the intrusion of moisture from the outside, thereby realizing a highly reliable imaging device.

[0109] In a fifteenth aspect of the present disclosure, for example, in the imaging device according to the fourteenth aspect,

[0110] The at least one film may include at least one selected from the group consisting of a light shielding film and a second insulating film.

[0111] In a 16th aspect of the present disclosure, for example, the imaging device according to any one of the 13th to 15th aspects may further include a first film.

[0112] The first recess may also include a second recess,

[0113] The first film may also include an inner portion located within the first recess,

[0114] A second continuous surface including a second dividing surface that divides the second recessed portion and a side surface of the inner portion may be provided.

[0115] In a seventeenth aspect of the present disclosure, for example, the imaging device according to the sixteenth aspect may further include a second film.

[0116] The second film may be in contact with the second continuous surface.

[0117] In an eighteenth aspect of the present disclosure, for example, in the imaging device according to any one of the thirteenth to seventeenth aspects,

[0118] The support substrate may also include an array of pixel electrodes,

[0119] In a plan view, the length of the first recessed portion in the direction along the first continuous surface may be longer than the length of the array in the direction along the first continuous surface.

[0120] The structures of the fifteenth to eighteenth aspects are examples of structures that the imaging device has.

[0121] In a 19th aspect of the present disclosure, for example, in the imaging device according to any one of the 13th to 18th aspects,

[0122] The support substrate may be provided with a step by the first recess.

[0123] The step can hinder the movement of moisture propagating on the upper surface of the support substrate. Therefore, the technology according to the nineteenth aspect is suitable for realizing an imaging device with high reliability.

[0124] The numerical values, shapes, materials, constituent elements, configurations of constituent elements and connection methods, processes, and the order of processes, etc., shown in the embodiments of this specification are examples, and their purpose is not to limit the present disclosure. The various methods described in this specification can be combined with each other as long as no contradiction occurs. In addition, in the drawings, the illustration of a part of the elements is sometimes omitted. In the drawings, the dimensions, etc. are sometimes exaggerated. In the following description, constituent elements having substantially the same function are represented by common reference marks, and the description of repetition is sometimes omitted or simplified.

[0125] In one embodiment of the present disclosure, the imaging device has a photoelectric conversion film on the upper layer that performs photoelectric conversion of incident light into an electrical signal, and a signal processing circuit including a silicon-based CMOS circuit that takes out the electrical signal obtained through the photoelectric conversion film to the outside on the lower layer. In this way, the photoelectric conversion film and the signal processing circuit are stacked, so they can be designed independently.

[0126] In this specification, the terms "upper", "lower", "outer", "row", "column" and the like are merely used to specify the relative arrangement of components, and are not intended to limit the posture of the imaging device when in use, or the posture of the components of the imaging device and the manufacturing device during the manufacturing process. The same is true for the X direction, the Y direction and the Z direction. In the figure, the X direction and the Y direction may correspond to the lateral direction. The Z direction may correspond to the up-down direction.

[0127] In this specification, the main component means a component that is contained in the largest amount based on mass. As an example, the main component is a component that accounts for more than 50% by mass. In a specific example, the main component is a component that accounts for more than 80% by mass.

[0128] In this specification, a “plan view” refers to a view when viewed from the thickness direction of the supporting substrate.

[0129] In this specification, "element A includes element B" means that element A includes at least a portion of element B. "element A overlaps element B in a plan view" means that at least a portion of element A overlaps at least a portion of element B in a plan view.

[0130] In this specification, ordinal numbers such as 1st, 2nd, 3rd, etc. are sometimes used. When an ordinal number is added to an element, it is not necessary that there are elements of the same type with a smaller order. The numbering of the ordinal number can be changed as needed. The intention of adding an ordinal number is not to interpret the element to which it is added in a restrictive manner. The same applies to terms such as "specific" and "specified".

[0131] (First embodiment)

[0132] 1. Example of Overall Configuration of Image Capture Device 1

[0133] Figure 1 1 is a plan view of an imaging device 1 according to the first embodiment. The imaging device 1 includes a plurality of pixels 100 arranged in a matrix in the XY direction. Each pixel 100 includes a readout circuit. In the imaging device 1, a pixel region 10A including the plurality of pixels 100 is formed.

[0134] In the imaging device 1, a pixel region 10A, an opposing electrode region 10B, a peripheral circuit region 10C, and a pad region 10D are sequentially arranged. In the opposing electrode region 10B, a voltage is applied to the opposing electrode. In the peripheral circuit region 10C, a peripheral circuit is arranged. The peripheral circuit includes a vertical driver 12, a timing generator 13, a signal processing circuit 14, a horizontal driver 15, an LVDS (Low Voltage Differential Signaling) device 16, a serial conversion unit 17, and an opposing electrode voltage supply unit 18. In the pad region 10D, a plurality of pads 19 are arranged.

[0135] The vertical driver 12 performs control to read out signals from each readout circuit. The timing generator 13 generates and supplies timing for driving the image pickup device 1. The timing generator 13 also performs readout control such as intermittent readout and partial readout.

[0136] Each column circuit in the signal processing circuit 14 sequentially performs correlated double sampling (CDS) processing and analog-to-digital (AD) conversion on a signal output from a corresponding column of a readout circuit. The obtained digital signal is stored in a memory provided for each column circuit.

[0137] The horizontal driver 15 controls to sequentially read out signals related to the pixels 100 for one row stored in the memory of the signal processing circuit 14 and output them to the LVDS device 16. The LVDS device 16 transmits digital signals. The serial converter 17 converts the input parallel digital signals into serial signals and outputs them.

[0138] In the first modification, the signal processing circuit 14 performs correlated double sampling processing instead of analog-to-digital conversion. An AD conversion circuit is provided instead of the LVDS device 16, and the serial conversion unit 17 is omitted.

[0139] In the second modification, the signal processing circuit 14 performs correlated double sampling processing instead of analog-to-digital conversion. The LVDS device 16 and the serial converter 17 are omitted, and an AD conversion circuit is provided outside the chip on which the imaging device 1 is provided.

[0140] In the third modified example, the signal processing circuit 14, the LVDS device 16, and the serial conversion section 17 are arranged in each area on both sides adjacent to the pixel area 10A. The columns of the plurality of readout circuits in the pixel area 10A are processed by two signal processing circuits 14. For example, half of the columns of the readout circuits (for example, odd-numbered columns) are processed by the signal processing circuit 14 in the area on one side adjacent to the pixel area 10A. The remaining half of the columns of the readout circuits (for example, even-numbered columns) are processed by the signal processing circuit 14 in the area on the other side adjacent to the pixel area 10A.

[0141] 2. Detailed Configuration Example of the Image Capture Device 1

[0142] Figure 2 and Figure 3 1 is a cross-sectional view of the imaging device 1 according to the first embodiment. The imaging device 1 includes a support substrate 190. The support substrate 190 includes a semiconductor substrate 101, a readout circuit 115, an insulating structure 102, a pixel plug 105, a connection plug 106, a pixel electrode 104, a connection electrode 103, a pad 19, and the like.

[0143] like Figure 2 As shown, an insulating structure 102 is provided above the semiconductor substrate 101. The insulating structure 102 includes insulating layers 102a to 102f. The semiconductor substrate 101 includes, for example, silicon (Si). The insulating structure 102 and the insulating layers 102a to 102f include, for example, silicon oxide (SiO2).

[0144] In the pixel region 10A, each pixel 100 includes a readout circuit 115. The readout circuit 115 is provided on the semiconductor substrate 101. The readout circuit 115 includes a diffusion region 115d provided on the semiconductor substrate 101. The diffusion region 115d functions as a charge storage unit.

[0145] In the pixel region 10A, a plurality of pixel electrodes 104 are arranged in a matrix in the XY direction at a predetermined interval on the upper surface of the insulating structure 102. An insulating layer 102f is interposed between adjacent pixel electrodes 104. The arrangement of the pixel electrodes 104 corresponds to Figure 1 Pixel electrode 104 has a uniform film thickness and a flat upper surface.

[0146] Each pixel electrode 104 is electrically connected to a corresponding readout circuit 115 through a pixel plug 105. Specifically, the pixel plug 105 penetrates the insulating layers 102a to 102e and cooperates with the multilayer wiring to electrically connect the pixel electrode 104 and the readout circuit 115. Figure 2 In FIG. 1 , reference numeral 116 indicates the uppermost wiring in the multilayer wiring.

[0147] In this example, the readout circuit 115 includes a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or a TFT (Thin Film Transistor). The readout circuit 115 is shielded from light by a light shielding layer (not shown) provided inside the insulating structure 102 or the like.

[0148] The pixel electrode 104 may include at least one selected from metals and metal compounds. Examples of metals include titanium (Ti), tantalum (Ta), aluminum (Al), tungsten (W), copper (Cu), etc. Examples of metal compounds include metal nitrides. Examples of metal nitrides include titanium nitride (TiN), tantalum nitride (TaN), etc. The pixel electrode 104 may also include polycrystalline silicon doped with impurities to impart conductivity. In this embodiment, the pixel electrode 104 has a stacked structure including a layer including titanium and a layer including titanium nitride. The layer including titanium is in contact with the photoelectric conversion film 107, and the layer including titanium nitride is in contact with the pixel plug 105.

[0149] The pixel plug 105 may include a metal, such as copper (Cu), tungsten (W), etc. In this embodiment, the pixel plug 105 includes copper.

[0150] A photoelectric conversion film 107 is provided above the pixel electrode 104 and the insulating layer 102f. A counter electrode 108, an insulating film 114, an insulating film 109, and an insulating film 110 are stacked in order from bottom to top above the photoelectric conversion film 107. Although not shown in the figure, a color filter is provided above the insulating film 110 in the pixel region 10A. Furthermore, a microlens is provided above the color filter.

[0151] The photoelectric conversion film 107 includes a photoelectric conversion layer that generates hole-electron pairs. The photoelectric conversion film 107 may include an electron transport layer that transports electrons or a hole transport layer that transports holes. The photoelectric conversion film 107 may include an electron blocking layer that blocks electrons or a hole blocking layer that blocks holes.

[0152] The photoelectric conversion film 107 includes, for example, an organic material. In the present embodiment, the photoelectric conversion film 107 includes an organic material as a main component. The organic material may be an organic semiconductor material. The photoelectric conversion film 107 may include one or more organic semiconductor layers. For the organic semiconductor material, an organic p-type semiconductor material and an organic n-type semiconductor material of known materials may be used. The photoelectric conversion film 107 may also be a mixed film of organic donor molecules and acceptor molecules, a mixed film of semiconductor-type carbon nanotubes and acceptor molecules, or a film containing quantum dots. The photoelectric conversion film 107 may also include inorganic materials such as amorphous silicon. The photoelectric conversion film 107 may also be a metal oxide film. The metal oxide film is, for example, a copper oxide (CuO) film.

[0153] The counter electrode 108 is opposite to the pixel electrode 104. The counter electrode 108 includes a light-transmitting conductive material. The conductive material included in the counter electrode 108 is, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), etc. In this embodiment, the counter electrode 108 includes ITO as a main component.

[0154] The insulating film 114 includes, for example, aluminum oxide (AlO). The insulating film 109 and the insulating film 110 include, for example, silicon oxynitride (SiON). In this embodiment, the insulating film 114 includes aluminum oxide as a main component. The insulating film 109 and the insulating film 110 include silicon oxynitride as a main component.

[0155] like Figure 3 As shown in FIG. 1 , an opposing electrode region 10B is provided outside the pixel region 10A. A connection electrode 103 is provided in the opposing electrode region 10B. The connection electrode 103 is electrically connected to the opposing electrode voltage supply unit 18 via a connection plug 106 .

[0156] The connection electrode 103 may include at least one selected from metals and metal compounds. Examples of the metal are titanium (Ti), tantalum (Ta), aluminum (Al), tungsten (W), and copper (Cu). Examples of the metal compound are metal nitrides. Examples of the metal nitrides are titanium nitride (TiN), tantalum nitride (TaN), and the like. The connection electrode 103 may also include polycrystalline silicon doped with impurities to impart conductivity. In this embodiment, the connection electrode 103 has a stacked structure including a layer including titanium and a layer including titanium nitride. The layer including titanium is in contact with the light shielding film 121, and the layer including titanium nitride is in contact with the connection plug 106.

[0157] The connection plug 106 may include a metal, such as copper (Cu), tungsten (W), etc. In this embodiment, the connection plug 106 includes copper.

[0158] In the plan view, a light shielding film 121 is provided at the periphery of the effective pixel region on the insulating film 110. In the present embodiment, in the plan view, the light shielding film 121 overlaps with at least one pixel electrode 104. The pixel 100 having the pixel electrode 104 overlapping with the light shielding film 121 can be used as an optical black (OB) pixel. Figure 4E, the pixel 100 having the pixel electrode 104 in the leftmost column and the rightmost column may correspond to the OB pixel. Specifically, the pixel 100 in the effective pixel area does not overlap with the shading film 121 in a plan view. On the other hand, the OB pixel at the peripheral position of the effective pixel area overlaps with the shading film 121 in a plan view, and is therefore shielded by the shading film 121. The signal generated by the pixel 100 in the effective pixel area is corrected by the signal generated by the OB pixel, thereby generating a signal with reduced noise. In addition, the shading film 121 electrically connects the opposing electrode 108 and the connecting electrode 103. In the present embodiment, the shading film 121 overlaps with the opposing electrode 108 and the connecting electrode 103 in a plan view.

[0159] The light-shielding film 121 may, for example, include at least one selected from the group consisting of metals and metal compounds. In a specific example, the light-shielding film 121 includes at least one selected from the group consisting of titanium (Ti), titanium nitride (TiN), aluminum (Al), silicon (Si), copper-doped aluminum (AlCu), copper (Cu), tungsten (W), gold (Au), silver (Ag), nickel (Ni) and cobalt (Co). The light-shielding film 121 may also include an alloy, which includes at least two of the multiple materials listed in the above specific examples. The light-shielding film 121 may have either a single-layer structure or a stacked structure. In the present embodiment, the light-shielding film 121 has a stacked structure including a layer containing titanium and a layer containing a titanium compound. Specifically, the layer containing titanium is the lower layer, and the layer containing the titanium compound is the upper layer.

[0160] In this embodiment, the number of connection electrodes 103, connection plugs 106, counter electrode voltage supply units 18, etc. connected to one counter electrode 108 is not particularly limited. These numbers can be appropriately increased or decreased in consideration of chip area, wiring width, etc.

[0161] like Figure 3 As shown in FIG. 1 , a peripheral circuit region 10C is provided outside the counter electrode region 10B. A peripheral circuit is provided in the peripheral circuit region 10C. The metal layer in the peripheral circuit region 10C includes, for example, copper (Cu).

[0162] In the peripheral circuit region 10C, an insulating film 124, an insulating film 125, and a light shielding film 126 are provided in order from bottom to top. As a material of the insulating film 124, a material that can be adopted as a material of the insulating film 114 can be adopted. As a material of the insulating film 125, a material that can be adopted as a material of the insulating film 109 can be adopted. As a material of the light shielding film 126, a material that can be adopted as a material of the light shielding film 121 can be adopted. The insulating film 114, the insulating film 109, the insulating film 124, and the insulating film 125 can be referred to as a protective film.

[0163] The insulating film 110 extends not only in the pixel region 10A but also in the counter electrode region 10B and the peripheral circuit region 10C. The insulating film 110 covers the insulating film 109 , the light shielding film 121 , the insulating film 125 , and the light shielding film 126 from above.

[0164] like Figure 3 As shown in FIG. 1 , a pad region 10D is provided at a position outside the peripheral circuit region 10C. A recess 165 is provided in the pad region 10D. A pad 19 is provided on the bottom surface of the recess 165. Although detailed illustration is omitted, the pad 19 is electrically connected to various circuits such as a signal input / output circuit and a voltage supply circuit.

[0165] For the configuration of the imaging device 1, refer to Figures 1 to 3 as well as FIG. 4A to FIG. 4E Further explanation. FIG. 4A to FIG. 4C It is an enlarged cross-sectional view of the imaging device 1 according to the first embodiment. Figure 4D It is an enlarged cross-sectional view of the support substrate 190 according to the first embodiment. Figure 4E FIG. 1 is an enlarged plan view of the imaging device 1 according to the first embodiment. Figure 4A In FIG. 1 , the light shielding film 121, the light shielding film 126, and the insulating film 110 are indicated by dotted lines. Figure 4B In FIG. 1 , the insulating film 110 is indicated by a dotted line. Figure 4E In FIG. 1 , the insulating film 110 is omitted from illustration. Figure 3 and Figure 4E In the example, in a plan view, the side surface 107s of the photoelectric conversion film 107 is continuous with the side surface 108s of the counter electrode 108.

[0166] According to reference Figures 1 to 3 As can be understood from the above description, the imaging device 1 includes the supporting substrate 190, the insulating film 124, the insulating film 125, and the photoelectric conversion film 107. The supporting substrate 190 includes the array 104a of the pixel electrodes 104. The insulating film 124, the insulating film 125, and the photoelectric conversion film 107 are located above the supporting substrate 190. The supporting substrate 190 supports the photoelectric conversion film 107.

[0167] The support substrate 190 is provided with a recessed portion 161. Figure 3 , Figure 4A and Figure 4E It can be understood that a continuous surface 171 is provided at a position separated from the photoelectric conversion film 107 in a plan view, and the continuous surface 171 includes a partition surface 161s that partitions the recessed portion 161, a side surface 124s of the insulating film 124, and a side surface 125s of the insulating film 125 in sequence. The recessed portion 161 can prevent the movement of moisture propagating on the upper surface 191 of the supporting substrate 190. Therefore, this configuration is suitable for realizing an imaging device 1 with high reliability.

[0168] The imaging device 1 includes at least one film. The film includes a portion located in the recess 161 and a portion located outside the recess 161 and above the support substrate 190. The film has a portion located in the recess 161, which can improve the adhesion between the support substrate 190 and the film. The improvement in adhesion can suppress the intrusion of moisture from the outside and realize the imaging device 1 with high reliability. Specifically, the film is in contact with the recess 161. The portion located outside the recess 161 can be a portion located above the photoelectric conversion film 107 and overlapping with the photoelectric conversion film 107 in a plan view. Figure 4B , Figure 4C and Figure 4E In the example, at least one film includes at least one selected from the group consisting of a light shielding film 121 and an insulating film 110 .

[0169] The imaging device 1 includes a first film, a second film, and a third film. FIG. 4A to FIG. 4E As shown, recess 161 includes recess 162 . like Figure 4B and Figure 4C As shown, the first film includes an inner portion 121p located in the recess 161. The third film includes a second inner portion 126p located in the recess 161. A continuous surface 172 is provided, and the continuous surface 172 includes a dividing surface 162s that divides the recess 162, and a side surface 121ps of the inner portion 121p. A continuous surface 173 is provided, and the continuous surface 173 includes a dividing surface 163s that divides the recess 162, and a side surface 126ps of the second inner portion 126p. The second film is in contact with the continuous surface 172 and the continuous surface 173. In the example shown in the figure, the first film is the light shielding film 121. The second film is the insulating film 110. The third film is the light shielding film 126.

[0170] like Figure 4D and Figure 4E As shown, in the plan view, the width W1 of the concave portion 161 is, for example, greater than 100 nm. The width W1 is, for example, less than 10000 nm. In the plan view, the width W2 of the concave portion 162 is smaller than the width W1. The width W2 is, for example, greater than 50 nm. The width W2 is, for example, less than 10000 nm. Figure 4D and Figure 4E In the example of , the width W1 is the dimension of the short side direction of the concave portion 161 in a plan view. The width W2 is the dimension of the short side direction of the concave portion 162 in a plan view.

[0171] like Figure 4DAs shown, the depth D1 of the concave portion 161 is, for example, greater than 10 nm and less than 600 nm. The depth D1 may also be greater than 20 nm and less than 500 nm. The depth D2 of the concave portion 162 is smaller than the depth D1. The depth D2 is, for example, greater than 5 nm and less than 400 nm. The depth D2 may also be greater than 10 nm and less than 300 nm.

[0172] The difference D3 obtained by subtracting the depth D2 from the depth D1 is, for example, greater than 5 nm and less than 200 nm. The difference D3 may also be greater than 10 nm and less than 200 nm. In one example, the depth D2 is greater than the difference D3. However, the depth D2 may be the same as the difference D3 or smaller than the difference D3.

[0173] like Figure 4E As shown, in the plan view, the length Lc of the concave portion 161 in the direction along the continuous surface 171 is longer than the length La of the array 104a of the pixel electrode 104 in the direction along the continuous surface 171. Figure 4E In the example, when the number of pixel electrodes 104 in the imaging device 1 is set to N (N is a natural number), the length La is the length of the smallest rectangle that surrounds the array 104a of N pixel electrodes 104 in the plan view in the direction along the continuous surface 171. Figure 4E In the example of , the direction along the continuous surface 171 is the long side direction of the recess 161 in the plan view. Figure 4E In the example, the array 104a is in a matrix shape, and one of the row direction and the column direction of the pixel electrode 104, specifically the column direction, is parallel to the long side direction of the concave portion 161 in the plan view. In addition, in the plan view, the length Lc is longer than the length Li of the insulating film 125 in the direction along the continuous surface 171.

[0174] The recess 161 provides the step 180 on the support substrate 190. The step 180 can prevent the movement of moisture propagating on the upper surface 191 of the support substrate 190. Therefore, this configuration is suitable for realizing the imaging device 1 with high reliability.

[0175] 3. Camera system of camera device 1

[0176] Figure 51 is an explanatory diagram of a video recording system. A voltage is applied from the counter electrode voltage supply unit 18 to the counter electrode 108 via the connection plug 106 and the connection electrode 103 in sequence. As a result, a bias voltage is applied between the pixel electrode 104 and the counter electrode 108, and an electric field is applied to the photoelectric conversion film 107. In this state, light incident from above passes through the microlens, the color filter, the insulating film 110, the insulating film 109, the insulating film 114, and the counter electrode 108, and enters the photoelectric conversion film 107. As a result, the photoelectric conversion film 107 performs photoelectric conversion on the incident light to generate electric charge. The electric charge generated in the photoelectric conversion film 107 is collected by the pixel electrode 104, transferred from the pixel electrode 104 to the diffusion region 115d via the pixel plug 105, and temporarily accumulated in the diffusion region 115d. The accumulated electric charge is output to the outside as a signal in a timely manner through the switching action of the transistor element and the like in the readout circuit 115.

[0177] 4. Example of a method for manufacturing the imaging device 1

[0178] FIG. 6A to FIG. 6O 1 is a process diagram for explaining the manufacturing method according to the first embodiment. Fig. 6A The steps will be described starting from the state of the structure shown. The structure includes a support substrate 190 .

[0179] In Fig. 6A A shadow mask 151 is disposed at an upper position of the structure shown. Figure 6B The shadow mask 151 is schematically shown. The shadow mask 151 is a plate 151p provided with an opening 151o. The plate 151p is, for example, a metal plate.

[0180] Next, the material of the photoelectric conversion film 107 is deposited from above through the opening 1510 onto the support substrate 190 by vacuum evaporation. Thus, the pixel electrode 104 and the connecting electrode 103 are covered by the photoelectric conversion film 107 from above. Figure 6C In this embodiment, the material of the photoelectric conversion film 107 includes organic matter, specifically, includes organic matter as a main component. The thickness of the photoelectric conversion film 107 directly above the pixel electrode 104 is, for example, 500 nm.

[0181] In a plan view, the area of ​​the opening 151o is smaller than the area of ​​the support substrate 190. The photoelectric conversion film 107 is formed in a limited area on the support substrate 190 so as not to overlap with a predetermined area 195 of the support substrate 190 in a plan view. Figure 6C In the example of FIG. 1 , the photoelectric conversion film 107 is formed in the pixel region 10A and the counter electrode region 10B. The predetermined region 195 belongs to the peripheral circuit region 10C. The predetermined region 195 may overlap with the peripheral circuit in a plan view.

[0182] exist Figure 6CIn the example of FIG. 1 , the material of the photoelectric conversion film 107 passes through the opening 151o from top to bottom and then goes around to the area overlapping with the plate 151p. The photoelectric conversion film 107 has a slope 107p that becomes thinner continuously toward the outside. The angle θs between the lower surface 107a of the slope 107p and the slope surface 107b is, for example, an angle greater than 0° and less than 45°, or an angle greater than 0° and less than 30°.

[0183] After the photoelectric conversion film 107 is formed, the shadow mask 151 is retracted. Thereafter, the shadow mask 152 is disposed above the structure. Fig.6D The shadow mask 152 is schematically shown. The shadow mask 152 is a plate 152p provided with an opening 152o. The plate 152p is, for example, a metal plate. In the present embodiment, in a plan view, the area of ​​the opening 152o is larger than the area of ​​the opening 151o.

[0184] Next, the material of the counter electrode 108 is deposited from above through the opening 152o onto the support substrate 190 by PVD (Physical Vapor Deposition). Thus, the photoelectric conversion film 107 is covered with the counter electrode 108 from above. Fig. 6E In this embodiment, the material of the counter electrode 108 includes ITO, specifically, includes ITO as a main component. After the counter electrode 108 is formed, the shadow mask 152 is retracted.

[0185] Next, the material of the insulating film 129 is deposited from above onto the support substrate 190 by CVD (Chemical Vapor Deposition). Thus, the counter electrode 108 is covered with the insulating film 129 from above. Fig. 6F In this embodiment, the material of the insulating film 129 includes aluminum oxide (AlO), specifically, aluminum oxide as a main component. The thickness of the insulating film 129 is, for example, 30 nm.

[0186] It can be understood from the following description that the insulating film 114 is a part of the insulating film 129. The insulating film 114 has a better performance in protecting the photoelectric conversion film 107 than the counter electrode 108. The insulating film 129 is specifically formed by an atomic layer deposition (ALD) method. The atomic layer deposition method can be performed without plasma, so it is possible to suppress damage to the photoelectric conversion film 107 when forming the insulating film 129. The atomic layer deposition method has a high passivation effect, so it gives the insulating film 114 a high protective function. In addition, the atomic layer deposition method has excellent coverage characteristics, so even if there is foreign matter on the photoelectric conversion film 107, it is not easy to produce an area of ​​the photoelectric conversion film 107 that is not covered by the insulating film 114.

[0187] After the insulating film 129 is formed, the material of the insulating film 130 is deposited at a position above the structure by the CVD method. Thus, the counter electrode 108 and the insulating film 129 are covered by the insulating film 130 from above. Figure 6G In this embodiment, the material of the insulating film 130 includes silicon oxynitride (SiON), specifically, silicon oxynitride as a main component. The thickness of the insulating film 130 is, for example, 200 nm.

[0188] Next, a resist pattern 139 is formed by photolithography at a position above the insulating film 130. The resist pattern 139 is a pattern having an opening. Specifically, in a plan view, the resist pattern 139 is arranged so that the resist pattern 139 overlaps with the pixel electrode 104 and the opening overlaps with the connection electrode 103. Figure 6H The resist pattern 139 is schematically shown.

[0189] Next, the insulating film 130 is dry-etched using the resist pattern 139 as a mask. Fig.6I As shown, the insulating film 130 is divided into the insulating film 125 and the insulating film 109. After the dry etching, the resist pattern 139 is removed by ashing.

[0190] Next, the counter electrode 108 and the insulating film 129 are dry-etched using the insulating film 109 and the insulating film 125 as masks. The dry etching is selective for the counter electrode 108 and the insulating film 129, but is substantially non-selective for the insulating film 109, the insulating film 125, and the photoelectric conversion film 107. By dry etching, the portions of the counter electrode 108 and the insulating film 129 that do not overlap with the insulating film 109 and the insulating film 125 in a plan view are removed. Figure 6J As shown, the area of ​​the counter electrode 108 in the plan view is reduced, and the insulating film 129 is divided into the insulating film 114 and the insulating film 124. In addition, by over-etching, a recess 161 is formed in a region of the support substrate 190 that does not overlap with the insulating film 109, the insulating film 125, and the photoelectric conversion film 107 in the plan view.

[0191] Next, the photoelectric conversion film 107 is dry-etched using the insulating film 109 as a mask. The dry etching is selective for the photoelectric conversion film 107, but substantially non-selective for the insulating film 109. By dry etching, the portion of the photoelectric conversion film 107 that does not overlap with the insulating film 109 in a plan view is removed. Figure 6KAs shown, the area of ​​the photoelectric conversion film 107 in the plan view is reduced. The etching gas for dry etching contains oxygen (O2). The organic material of the photoelectric conversion film 107 reacts with the oxygen of the etching gas to generate carbon oxide (carbon oxide), thereby performing dry etching. By dry etching, a side surface 107s is formed on the photoelectric conversion film 107. The angle θt between the lower surface 107a and the side surface 107s is, for example, greater than 70° and less than 90°, and may also be greater than 80° and less than 90°.

[0192] Next, in Figure 6K The material of the light shielding film 140 is deposited at the upper position of the structure by CVD or PVD. Thus, the insulating film 109, the connecting electrode 103, the recess 161 and the insulating film 125 are covered from above by the light shielding film 140. Figure 6L In the present embodiment, the material of the light shielding film 140 includes titanium (Ti) and titanium nitride (TiN). Specifically, in the light shielding film 140, a titanium layer and a titanium nitride layer are stacked in order from bottom to top. The thickness of the light shielding film 140 is, for example, 400 nm.

[0193] Next, a resist pattern (not shown) is formed at a position above the insulating film 140 by photolithography. The light shielding film 140 is dry-etched using the resist pattern as a mask. The dry etching is performed to remove a portion of the light shielding film 140 that overlaps with a portion of the concave portion 161 in a plan view. Figure 6M As shown in FIG. 1 , the light shielding film 140 is divided into the light shielding films 121 and 126. In addition, by over-etching, the light shielding film 140 is divided into the light shielding films 121 and 126. Figure 6L In a region where a part of the concave portion 161 is repeated, a concave portion 162 is formed. After the dry etching, the resist pattern is removed by ashing.

[0194] Next, in Figure 6M The material of the insulating film 110 is deposited by CVD at the upper position of the structure. Figure 6N In this embodiment, the material of the insulating film 110 includes silicon oxynitride (SiON), specifically, includes silicon oxynitride as a main component. The thickness of the insulating film 110 is, for example, 400 nm.

[0195] Next, by dry etching, the recessed portion 165 is formed in the pad region 10D. Fig.6O FIG. 1 shows a structure in which a concave portion 165 is formed in the pad region 10D. Then, a pad 19 is arranged on the bottom surface of the concave portion 165. Thus, Figure 3 The camera device 1 is shown.

[0196] In the above example, the photoelectric conversion film 107 is formed in a limited area in a region overlapping with the support substrate 190 in a plan view by the shadow mask 151. However, the photoelectric conversion film 107 may be formed in the limited area by other methods such as spraying, imprinting, and lift-off. The material of the photoelectric conversion film 107 may also be a metal oxide such as copper oxide.

[0197] In the above example, the counter electrode 108 is formed in a limited region of the region overlapping with the support substrate 190 in a plan view by the shadow mask 152. However, the counter electrode 108 may be formed in the limited region by other methods such as spraying, imprinting, and lift-off. The counter electrode 108 may also be formed in the entire region overlapping with the support substrate 190 in a plan view.

[0198] In the above example, the counter electrode 108, the photoelectric conversion film 107, etc. are processed by dry etching. By dry etching the photoelectric conversion film 107, the angle θt between the lower surface 107a and the side surface 107s of the photoelectric conversion film 107 can be increased. This is advantageous from the perspective of reducing the area of ​​the imaging device 1. However, other methods such as wet etching and reverse sputtering may be used instead of dry etching.

[0199] According to the above description, it can be understood that Figure 7 A method for manufacturing the imaging device 1 according to the first embodiment will be described below. Figure 7 This is a flowchart for explaining the manufacturing method according to the first embodiment. The manufacturing method includes steps S10 to S60 in sequence.

[0200] In the manufacturing method, a support substrate 190 is used. The support substrate 190 includes a semiconductor substrate 101, a diffusion region 115d, a pixel electrode 104, and a connecting electrode 103. The diffusion region 115d is provided on the semiconductor substrate 101. The pixel electrode 104 is electrically connected to the diffusion region 115d. The connecting electrode 103 is electrically separated from both the pixel electrode 104 and the semiconductor substrate 101. In the completed imaging device 1, in a state where a potential difference is applied between the pixel electrode 104 and the connecting electrode 103, the photoelectric conversion film 107 performs photoelectric conversion, and the generated charge is collected in the pixel electrode 104.

[0201] In step S10, the photoelectric conversion film 107 is formed at a position above the support substrate 190 so that the photoelectric conversion film 107 and the predetermined area 195 of the support substrate 190 do not overlap in a plan view. In step S10, the photoelectric conversion film 107 is formed so that the first formation ratio is greater than 0% and less than 100%. The first formation ratio is a ratio of the overlapping area of ​​the photoelectric conversion film 107 and the support substrate 190 in a plan view to the area of ​​the support substrate 190 in a plan view. The first formation ratio may be greater than 10% and less than 90%, greater than 20% and less than 80%, or greater than 30% and less than 70%.

[0202] The photoelectric conversion film 107 is formed in step S10 without etching. In this context, "film formation" means forming a film in a place where there is no film.

[0203] When the photoelectric conversion film 107 is formed in step S10, a shadow mask 151 is used. The shadow mask 151 makes it easy to control the overlapping area of ​​the photoelectric conversion film 107 and the support substrate 190 in a plan view. Specifically, the overlapping area can be controlled to a necessary minimum, thereby reducing the reduction in area of ​​the photoelectric conversion film 107 due to etching.

[0204] Specifically, step S10 includes step S11 and step S12 in sequence. The shadow mask 151 is a plate 151p provided with an opening 151o. In step S11, the shadow mask 151 is arranged so that the support substrate 190 includes a portion overlapping with the opening 151o and a portion overlapping with the plate 151p in a plan view. In step S12, the material of the photoelectric conversion film 107 is deposited through the opening 151o. Thus, it is possible to prevent the material from being deposited on at least a portion of the portion of the support substrate 190 that overlaps with the plate 151p in a plan view.

[0205] In step S20, the counter electrode 108 is formed so that the counter electrode 108 is located above the photoelectric conversion film 107 and overlaps with the photoelectric conversion film 107 in a plan view. In step S20, the counter electrode 108 is formed so that the second formation ratio is greater than 0% and less than 100%. The second formation ratio is a ratio of the overlapping area of ​​the counter electrode 108 and the support substrate 190 in a plan view to the area of ​​the support substrate 190 in a plan view. The second formation ratio may be greater than 10% and less than 90%, greater than 20% and less than 80%, or greater than 30% and less than 70%.

[0206] The counter electrode 108 is formed in step S20, which is film formation of the counter electrode 108 without etching. In this context, "film formation" means forming a film in a place where there is no film.

[0207] In step S20, a shadow mask 152 is used when forming the counter electrode 108. The shadow mask 152 makes it easy to control the overlapping area of ​​the counter electrode 108 and the support substrate 190 in a plan view. Specifically, the overlapping area can be controlled to a necessary minimum, thereby reducing the reduction in area of ​​the counter electrode 108 due to etching.

[0208] Specifically, step S20 includes step S21 and step S22 in sequence. The shadow mask 152 is a plate 152p provided with an opening 152o. In step S21, the shadow mask 152 is arranged so that the support substrate 190 includes a portion overlapping with the opening 152o and a portion overlapping with the plate 152p in a plan view. In step S22, the material of the counter electrode 108 is deposited through the opening 152o. Thus, it is possible to prevent the material from being deposited on at least a portion of the portion of the support substrate 190 that overlaps with the plate 152p in a plan view.

[0209] In step S30, the insulating film 125 and the insulating film 109 are formed. Specifically, step S30 includes step S31 and step S32 in order.

[0210] In step S31, the insulating film 130 is formed to satisfy the following conditions:

[0211] The insulating film 130 includes a first insulating portion and a second insulating portion;

[0212] The first insulating portion is located above the predetermined region 195;

[0213] The first insulating portion overlaps with the predetermined region 195 in a plan view;

[0214] The second insulating portion is located above the photoelectric conversion film 107; and

[0215] The second insulating portion overlaps with the photoelectric conversion film 107 in a plan view.

[0216] In step S32, second etching is performed. The second etching removes the portion of the insulating film 130 located between the first insulating portion and the second insulating portion. Thus, the insulating film 125 corresponding to the first insulating portion and the insulating film 109 corresponding to the second insulating portion are formed. Specifically, the second etching is dry etching.

[0217] Through step S31 and step S32, in the region overlapping with the predetermined region 195 in the plan view, the insulating film 125 which does not overlap with the photoelectric conversion film 107 in the plan view can be formed without the operation of retreating the photoelectric conversion film 107. In addition, the insulating film 109 which overlaps with the photoelectric conversion film 107 in the plan view can be formed. Furthermore, by forming the insulating film 130 and performing the second etching, the insulating film 125 and the insulating film 109 can be formed at the same time.

[0218] In the plan view, the insulating film 109 obtained in step S32 overlaps with the pixel electrode 104. Specifically, in the plan view, the insulating film 109 overlaps with the entire pixel electrode 104. In the plan view, the above-mentioned portion removed in step S32 overlaps with the connecting electrode 103. Specifically, in the plan view, the portion overlaps with the entire connecting electrode 103.

[0219] The imaging device 1 including the insulating film 125 and the insulating film 109 is manufactured. Therefore, the insulating function of the insulating film 125 and the insulating film 109 can be effectively utilized in the imaging device 1.

[0220] In step S40, third etching is performed. The third etching reduces the area of ​​the counter electrode 108 in a plan view. Specifically, the third etching is dry etching.

[0221] As can be understood from the above description, in step S20, the counter electrode 108 having a limited area is formed. In step S40, the area of ​​the counter electrode 108 is reduced by the third etching. In this way, the reduction in the area of ​​the counter electrode 108 caused by the third etching can be suppressed, and the generation of etching residues can be suppressed. This suppression can improve the uniformity of image quality.

[0222] The third etching is performed so that the portion of the counter electrode 108 that overlaps with the pixel electrode 104 in a plan view remains. Specifically, the third etching is performed so that the entire portion of the counter electrode 108 that overlaps with the pixel electrode 104 in a plan view remains.

[0223] The third etching removes the portion of the counter electrode 108 that overlaps with the connection electrode 103 in a plan view. In this way, the imaging device 1 in which the connection electrode 103 and the counter electrode 108 do not overlap in a plan view can be manufactured. Specifically, the third etching removes the entire portion of the counter electrode 108 that overlaps with the connection electrode 103 in a plan view.

[0224] The third etching is performed after the following structure is formed:

[0225] The photoelectric conversion film 107 is located above the support substrate 190;

[0226] The photoelectric conversion film 107 is located above the connection electrode 103;

[0227] The photoelectric conversion film 107 overlaps with the connection electrode 103 in a plan view;

[0228] The counter electrode 108 is located above the photoelectric conversion film 107;

[0229] The counter electrode 108 overlaps with the photoelectric conversion film 107 in a plan view;

[0230] The insulating film 125 is located above the supporting substrate 190;

[0231] The insulating film 125 is separated from both the photoelectric conversion film 107 and the counter electrode 108 in a plan view;

[0232] The insulating film 109 is located above the counter electrode 108; and

[0233] The insulating film 109 overlaps with the counter electrode 108 in a plan view.

[0234] The third etching includes etching that uses the insulating film 109 as a mask and reduces the area of ​​the counter electrode 108 in a plan view. The third etching includes etching that uses the insulating film 125 and the photoelectric conversion film 107 as masks and forms the recess 161 in the support substrate 190. Specifically, the recess 161 can be formed in the insulating layer 102f of the support substrate 190.

[0235] The selectivity of the third etching for the counter electrode 108 is higher than the selectivity of the third etching for the photoelectric conversion film 107. By such a third etching, the portion of the counter electrode 108 that overlaps with the connecting electrode 103 in a plan view is removed. Specifically, by the third etching, the entire portion of the counter electrode 108 that overlaps with the connecting electrode 103 in a plan view is removed.

[0236] The ratio of the area of ​​the counter electrode 108 in a plan view reduced by the third etching to the area of ​​the support substrate 190 in a plan view is defined as a second reduction ratio. The second reduction ratio is, for example, greater than 0% and less than 20%, or greater than 0% and less than 10%.

[0237] In step S50, first etching is performed. The first etching reduces the area of ​​the photoelectric conversion film 107 in a plan view. Specifically, the first etching is dry etching.

[0238] As can be understood from the above description, in step S10, a photoelectric conversion film 107 having a limited area is formed. In step S50, the area of ​​the photoelectric conversion film 107 is reduced by the first etching. In this way, the reduction in the area of ​​the photoelectric conversion film 107 caused by the first etching can be suppressed, and the generation of etching residues can be suppressed. This suppression can improve the uniformity of image quality.

[0239] The first etching is performed so that a portion of the photoelectric conversion film 107 that overlaps with the pixel electrode 104 in a plan view remains. Specifically, the first etching is performed so that the entire portion of the photoelectric conversion film 107 that overlaps with the pixel electrode 104 in a plan view remains.

[0240] The first etching removes the portion of the photoelectric conversion film 107 that overlaps with the connection electrode 103 in a plan view. In this way, it is possible to manufacture an imaging device 1 in which the connection electrode 103 and the photoelectric conversion film 107 do not overlap in a plan view. Specifically, the first etching removes the entire portion of the photoelectric conversion film 107 that overlaps with the connection electrode 103 in a plan view.

[0241] As can be understood from the above description, the third etching with relatively low selectivity for the photoelectric conversion film 107 is performed in a state where the photoelectric conversion film 107 is located above the connection electrode 103 and the photoelectric conversion film 107 overlaps with the connection electrode 103 in a plan view. Thereafter, the portion of the photoelectric conversion film 107 that overlaps with the connection electrode 103 in a plan view is removed by the first etching. In this way, the connection electrode 103 can be protected by the photoelectric conversion film 107 in the third etching. Specifically, it is possible to prevent the connection electrode 103 from being damaged and causing the resistance in the connection electrode 103 to increase. After this removal, an electrical path that electrically connects the connection electrode 103 and the counter electrode 108 is formed at a position above the support substrate 190. As can be understood from the description of step S60 described later, the electrical path is specifically the second film body, which can correspond to the light shielding film 121.

[0242] In step S50, an insulating film mask is used in the first etching. The insulating film mask is difficult to be etched. Therefore, by using the insulating film mask for the first etching, the generation of etching residues can be suppressed. This suppression can improve the uniformity of image quality. Specifically, the insulating film mask can make the selectivity ratio during etching larger than that of the photoelectric conversion film 107, so it is difficult to be etched. In addition, in a typical example, the insulating film mask does not contain carbon that causes etching residues. This also helps to suppress the generation of etching residues. The insulating film mask can be an insulating film 109.

[0243] The ratio of the area of ​​the photoelectric conversion film 107 in a plan view reduced by the first etching to the area of ​​the support substrate 190 in a plan view is defined as a first reduction ratio. The first reduction ratio is, for example, greater than 0% and less than 20%, or greater than 0% and less than 10%.

[0244] The predetermined region 195 belongs to the peripheral circuit region 10C. On the other hand, the photoelectric conversion film 107 after the first etching belongs to the pixel region 10A.

[0245] In step S60, a first film body and a second film body are formed. Specifically, step S60 includes step S61 and step S62 in sequence.

[0246] In step S61, a specific film is formed to satisfy the following conditions:

[0247] The specific membrane body includes a first membrane portion and a second membrane portion;

[0248] The first film portion is located above the predetermined area 195;

[0249] The first film portion overlaps with the prescribed area 195 in plan view;

[0250] The second film portion is located above the photoelectric conversion film 107; and

[0251] The second film portion overlaps with the photoelectric conversion film 107 in a plan view.

[0252] In step S62, the fourth etching is performed. The fourth etching removes the intermediate portion between the first film portion and the second film portion in the specific film body. Thus, the first film body corresponding to the first film portion and the second film body corresponding to the second film portion are formed.

[0253] Through the steps S61 and S62, in the region overlapping with the predetermined region 195 in the plan view, the first film body that does not overlap with the photoelectric conversion film 107 in the plan view can be formed without the operation of retreating the photoelectric conversion film 107. In addition, the second film body that overlaps with the photoelectric conversion film 107 in the plan view can be formed. Moreover, by forming the specific film body and the fourth etching, the first film body and the second film body can be formed at the same time. The specific film body, the first specific film, and the second specific film can correspond to the light shielding film 140, the light shielding film 126, and the light shielding film 121, respectively.

[0254] In step S62 , the fourth etching is performed to form the recessed portion 162 in the portion of the support substrate 190 that overlaps with the middle portion in plan view.

[0255] (Second embodiment)

[0256] Figure 8 6 is a schematic diagram of a camera system 604 according to the second embodiment. The camera system 604 includes an imaging device 600, an optical system 601, a camera signal processing unit 602, and a system controller 603. As the imaging device 600, the imaging device 1 described in the first embodiment can be used. The optical system 601 focuses light. The optical system 601 includes, for example, a lens. The camera signal processing unit 602 performs signal processing on data captured by the imaging device 600 and outputs the data as an image or data. The system controller 603 controls the imaging device 600 and the camera signal processing unit 602.

[0257] (Third embodiment)

[0258] Figures 9A-9F 1 and 2 are process explanation diagrams of the manufacturing method according to the third embodiment. Each process will be explained starting from a state where the structure shown in FIG. A is prepared. The structure includes a support substrate 190 .

[0259] In Fig. 9A A ring-shaped mask 153 is arranged at the upper position of the structure shown. Fig. 9B The annular mask 153 is schematically shown. The annular mask 153 is a plate 153p provided with openings 153o. The plate 153p is, for example, a metal plate.

[0260] Fig. 9C The structure in which the ring-shaped mask 153 is arranged above the support substrate 190 is schematically shown. Next, the material of the photoelectric conversion film 107 is deposited from above through the opening 153o onto the support substrate 190 by vacuum evaporation. Thus, the pixel electrode 104 and the connecting electrode 103 are covered from above by the photoelectric conversion film 107. Fig.9D In this embodiment, the material of the photoelectric conversion film 107 includes organic matter, specifically, includes organic matter as a main component. The thickness of the photoelectric conversion film 107 directly above the pixel electrode 104 is, for example, 500 nm.

[0261] In a plan view, the area of ​​the opening 153o is smaller than the area of ​​the support substrate 190. The photoelectric conversion film 107 is formed in a limited area on the support substrate 190 so as not to overlap with a predetermined area 195 of the support substrate 190 in a plan view. Fig.9D In the example of FIG. 1 , the photoelectric conversion film 107 is formed in the pixel region 10A and the counter electrode region 10B. Fig.9D In the example, the predetermined region 195 is the outer peripheral portion of the support substrate 190 .

[0262] After the photoelectric conversion film 107 is formed, the annular mask 190 is withdrawn. Thereafter, the annular mask 154 is disposed above the support substrate 190 . Fig.9EThe annular mask 154 is schematically shown. The annular mask 154 is a plate 154p provided with an opening 154o. The plate 154p is, for example, a metal plate. In the present embodiment, in a plan view, the area of ​​the opening 154o is larger than the area of ​​the opening 153o.

[0263] Fig.9F The structure in which the ring-shaped mask 153 is arranged above the support substrate 190 is schematically shown. Next, the material of the counter electrode 108 is deposited from above through the opening 152o onto the support substrate 190 by PVD (Physical Vapor Deposition). Thus, the photoelectric conversion film 107 is covered from above by the counter electrode 108. Figure 9G In this embodiment, the material of the counter electrode 108 includes ITO, specifically, includes ITO as a main component. After the counter electrode 108 is formed, the annular mask 154 is withdrawn.

[0264] The subsequent steps are the same as those of the first embodiment. The counter electrode 108, the photoelectric conversion film 107, etc. are processed by dry etching to obtain Figure 9H However, other methods such as wet etching and reverse sputtering may be used instead of dry etching.

[0265] According to the above description, it can be understood that Fig.10 A method for manufacturing the imaging device 1 according to the third embodiment will be described below. Fig.10 is a flowchart for explaining the manufacturing method according to the first embodiment. The manufacturing method includes step S70 in place of Figure 7 The step S10 includes a step S80 to replace the step S20.

[0266] The method for manufacturing the imaging device 1 according to the third embodiment is described in a manner that the shadow mask is replaced with a metal mask compared to the method for manufacturing the imaging device 1 according to the first embodiment, and therefore description of the steps S30 to S60 will be omitted.

[0267] In step S70, the photoelectric conversion film 107 is formed at a position above the support substrate 190 so that the photoelectric conversion film 107 and the predetermined area 195 of the support substrate 190 do not overlap in a plan view. In step S70, the photoelectric conversion film 107 is formed so that the first formation ratio is greater than 0% and less than 100%. The first formation ratio is a ratio of the overlapping area of ​​the photoelectric conversion film 107 and the support substrate 190 in a plan view to the area of ​​the support substrate 190 in a plan view. The first formation ratio may be greater than 10% and less than 90%, greater than 20% and less than 80%, or greater than 30% and less than 70%.

[0268] The photoelectric conversion film 107 is formed in step S70 without etching. In this context, "film formation" means forming a film where there is no film.

[0269] When the photoelectric conversion film 107 is formed in step S70, the annular mask 151 is used. The annular mask 151 makes it easy to control the overlapping area of ​​the photoelectric conversion film 107 and the supporting substrate 190 in the plan view. Specifically, the overlapping area can be controlled to the minimum required, thereby reducing the film forming stress applied to the substrate. Compared with the shadow mask, the annular mask has a larger blank space in the film forming area, and there is no need to strictly define the film forming area, so a mask with a larger plate thickness can be used. In this regard, a mask with a larger plate thickness can reduce the maintenance frequency and help reduce the cost of the process.

[0270] Specifically, step S70 includes step S71 and step S72 in sequence. The annular mask 153 is a circular plate 153p provided with an opening 153o. In step S71, the annular mask 153 is configured so that the support substrate 190 includes a portion overlapping with the opening 153o and a portion overlapping with the annular plate 153p in a plan view. In step S72, the material of the photoelectric conversion film 107 is deposited through the opening 153o. Thus, it is possible to avoid the material from being deposited on at least a portion of the portion of the support substrate 190 that overlaps with the plate 153p in a plan view. In particular, by using the annular mask 153, it is possible to avoid film formation on the outer periphery of the support substrate 190 that is useless when forming pixels, and it is possible to reduce the film formation stress applied to the substrate.

[0271] In step S80, the counter electrode 108 is formed so that the counter electrode 108 is located above the photoelectric conversion film 107 and overlaps with the photoelectric conversion film 107 in a plan view. In step S20, the counter electrode 108 is formed so that the second formation ratio is greater than 0% and less than 100%. The second formation ratio is a ratio of the overlapping area of ​​the counter electrode 108 and the support substrate 190 in a plan view to the area of ​​the support substrate 190 in a plan view. The second formation ratio may be greater than 10% and less than 90%, greater than 20% and less than 80%, or greater than 30% and less than 70%.

[0272] The counter electrode 108 is formed in step S80, which is film formation of the counter electrode 108 without etching. In this context, "film formation" means forming a film in a place where there is no film.

[0273] In step S80, the ring-shaped mask 154 is used when forming the counter electrode 108. The ring-shaped mask 154 makes it easy to control the overlapping area of ​​the counter electrode 108 and the support substrate 190 in a plan view. Specifically, the overlapping area can be controlled to a necessary minimum, thereby reducing the film formation stress applied to the substrate.

[0274] Specifically, step S80 includes step S81 and step S82 in sequence. The annular mask 154 is a circular ring-shaped plate 154p provided with an opening 154o. In the present embodiment, in a plan view, the area of ​​the opening 154o is larger than the area of ​​the opening 153o. In step S81, the annular mask 154 is configured so that in a plan view, the portion of the photoelectric conversion film 107 and the supporting substrate 190 where the photoelectric conversion film 107 is not formed includes a portion that overlaps with the opening 154o. Moreover, the plate 154p configured to be annular in a plan view includes a portion that overlaps with the portion of the supporting substrate 190 where the photoelectric conversion film 107 is not formed. In step S82, the material of the counter electrode 108 is deposited through the opening 154o. Thus, it is possible to avoid deposition of the material on at least a portion of the portion of the supporting substrate 190 that overlaps with the plate 154p in a plan view.

[0275] Regarding the steps S30 to S60 , the description related to the first embodiment is cited.

[0276] Industrial Applicability

[0277] According to the present disclosure, it is possible to realize an imaging device mounted on a digital camera or the like.

[0278] Description of reference numerals:

[0279] 1. 600 camera device

[0280] 10A pixel area

[0281] 10B Counter electrode area

[0282] 10C peripheral circuit area

[0283] 10D pad area

[0284] 12 Vertical Driver

[0285] 13 Timing Generator

[0286] 14 Signal processing circuit

[0287] 15 Horizontal driver

[0288] 16LVDS Device

[0289] 17 Serial conversion unit

[0290] 18 Counter electrode voltage supply unit

[0291] 19 Pads

[0292] 100 pixels

[0293] 101 Semiconductor substrate

[0294] 102 Insulation structure

[0295] 102a, 102b, 102c, 102d, 102e, 102f insulation layer

[0296] 103 Connecting electrodes

[0297] 104 pixel electrodes

[0298] 104a Array

[0299] 105 Pixel Plug

[0300] 106 Connecting plug

[0301] 107 Photoelectric conversion film

[0302] 107a Lower surface

[0303] 107b Slope

[0304] 107p Slope

[0305] 107s, 108s, 112ps, 124s, 126ps, 125s side

[0306] 108 opposing electrodes

[0307] 109, 110, 114, 124, 125, 129, 130 insulation film

[0308] 121, 126, 140 light shielding film

[0309] 115 Readout Circuit

[0310] 115d Diffusion area

[0311] 116 Top layer wiring

[0312] 121p, 126p internal part

[0313] 139 Resist pattern

[0314] 151, 152 Shadow Mask

[0315] 151o, 152o, 153o opening

[0316] 151p, 152p, 153p board

[0317] 153, 154 Metal Mask

[0318] 161, 162, 165 concave parts

[0319] 161s, 162s, 163s division surface

[0320] 171, 172, 173 continuous surfaces

[0321] 180 Step Difference

[0322] 190 Support base plate

[0323] 191 Upper surface

[0324] 195 Specified Area

[0325] 601 Optical System

[0326] 602 Camera signal processing unit

[0327] 603 System Controller

[0328] 604 Camera System

Claims

1. A method for manufacturing a camera device, comprising: forming a photoelectric conversion film so that a ratio of an overlapping area of ​​the photoelectric conversion film and the support substrate in a plan view relative to an area of ​​the support substrate in a plan view is greater than 0% and less than 100%; and The first etching reduces the area of ​​the photoelectric conversion film in a plan view.

2. The manufacturing method according to claim 1, A shadow mask is used when forming the photoelectric conversion film.

3. The manufacturing method according to claim 1 or 2, A ratio of the area reduced by the first etching to the area of ​​the support substrate in a plan view is greater than 0% and is 20% or less.

4. The manufacturing method according to claim 1, The support substrate includes a semiconductor substrate, a diffusion region provided on the semiconductor substrate, and a pixel electrode electrically connected to the diffusion region. The first etching is performed so that a portion of the photoelectric conversion film that overlaps with the pixel electrode in a plan view remains.

5. The manufacturing method according to claim 4, The support substrate further includes a connection electrode electrically separated from the pixel electrode. The first etching is performed so as to remove a portion of the photoelectric conversion film that overlaps with the connection electrode in a plan view.

6. The manufacturing method according to claim 1, An insulating film mask is used in the first etching.

7. The manufacturing method according to claim 1, The photoelectric conversion film is formed above the support substrate so that the photoelectric conversion film and a predetermined area of ​​the support substrate do not overlap in a plan view. The manufacturing method further comprises: forming a specific insulating film so that the specific insulating film includes a first insulating portion and a second insulating portion, wherein the first insulating portion is located above the specified region and overlaps with the specified region in a plan view, and the second insulating portion is located above the photoelectric conversion film and overlaps with the photoelectric conversion film in a plan view; as well as By the second etching, a portion of the specific insulating film located between the first insulating portion and the second insulating portion is removed to form a first insulating film corresponding to the first insulating portion and a second insulating film corresponding to the second insulating portion.

8. The manufacturing method according to claim 1, The photoelectric conversion film is formed above the support substrate. The manufacturing method further comprises: forming a counter electrode so that a ratio of an overlapping area of ​​the counter electrode and the supporting substrate in a plan view to an area of ​​the supporting substrate in a plan view is greater than 0% and less than 100%, the counter electrode is located above the photoelectric conversion film, and the counter electrode overlaps the photoelectric conversion film in a plan view; as well as The third etching reduces the area of ​​the counter electrode in a plan view.

9. The manufacturing method according to claim 1, The manufacturing method further comprises: After forming a structure in which the photoelectric conversion film is located above the supporting substrate, the counter electrode is located above the photoelectric conversion film, the counter electrode overlaps with the photoelectric conversion film in a plan view, the first insulating film is located above the supporting substrate, the first insulating film is separated from the photoelectric conversion film and the counter electrode in a plan view, the second insulating film is located above the counter electrode, and the second insulating film overlaps with the counter electrode in a plan view, a third etching is performed, The third etching comprises: etching to reduce the area of ​​the counter electrode in a plan view by using the second insulating film as a mask; and The first insulating film and the photoelectric conversion film are used as masks to form an etching process for forming a first recess in the support substrate.

10. The manufacturing method according to claim 1, The support substrate includes a connecting electrode, The manufacturing method further comprises: After forming a structure in which the photoelectric conversion film is located above the connecting electrode and overlaps with the connecting electrode in a plan view, and the opposing electrode is located above the photoelectric conversion film and overlaps with the photoelectric conversion film in a plan view, removing a portion of the opposing electrode that overlaps with the connecting electrode in a plan view by a third etching having a higher selectivity for the opposing electrode than for the photoelectric conversion film, After the third etching, the first etching is performed so as to remove a portion of the photoelectric conversion film that overlaps with the connection electrode in a plan view.

11. The manufacturing method according to claim 1, The photoelectric conversion film is formed above the support substrate so that the photoelectric conversion film and a predetermined area of ​​the support substrate do not overlap in a plan view. The manufacturing method further comprises: forming a specific film body so that the specific film body includes a first film portion and a second film portion, wherein the first film portion is located above the specified region and overlaps with the specified region in a plan view, and the second film portion is located above the photoelectric conversion film and overlaps with the photoelectric conversion film in a plan view; as well as By the fourth etching, a middle portion of the specific film body located between the first film portion and the second film portion is removed to form a first film body corresponding to the first film portion and a second film body corresponding to the second film portion.

12. The manufacturing method according to claim 11, By the fourth etching, a second recessed portion is formed in a portion of the support substrate that overlaps with the middle portion in a plan view.

13. A camera device comprising: A supporting substrate having a first recess; a first insulating film located above the support substrate; and The photoelectric conversion film is located above the supporting substrate. A first continuous surface is provided at a position separated from the photoelectric conversion film in a plan view, and the first continuous surface includes a first dividing surface that divides the first recessed portion and a side surface of the first insulating film.

14. The camera device according to claim 13, The imaging device further comprises at least one film, The at least one film includes a portion located in the first recess.

15. The imaging device according to claim 14, The at least one film includes at least one selected from the group consisting of a light shielding film and a second insulating film.

16. The imaging device according to claim 13, The imaging device further comprises a first film, The first recessed part includes a second recessed part, The first film includes an inner portion located in the first recess, The imaging device is provided with a second continuous surface including a second partitioning surface that partitions the second recessed portion and a side surface of the inner portion.

17. The imaging device according to claim 16, The imaging device further comprises a second film, The second film is in contact with the second continuous surface.

18. The imaging device according to claim 13, The support substrate comprises an array of pixel electrodes, In a plan view, a length of the first recessed portion in a direction along the first continuous surface is longer than a length of the array in the direction along the first continuous surface.

19. The imaging device according to any one of claims 13 to 18, The first recessed portion provides a step in the support substrate.

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