Process capable of electroplating wafer independent electrode
The described process for electroplating independent electrodes on wafers addresses high material costs and appearance issues by connecting electrodes during electroplating and etching to maintain independence, reducing waste and surface damage.
Patent Information
- Application Number
- CN202411301105.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-01-03
AI Technical Summary
Existing electrode manufacturing processes face issues such as high target material cost, poor electrode appearance due to tearing, and surface damage from over-etching, particularly in wafer electroplating methods.
A process for electroplating independent electrodes on wafers involves manufacturing and thickening electrodes in steps, using a conductive layer to connect them during electroplating, applying photoresist to control thickness, and etching to maintain independence, thereby reducing material waste and ensuring electrode integrity.
This method effectively reduces material waste, improves electrode appearance, and prevents surface damage by ensuring only targeted areas are electroplated and etched, thus lowering costs and enhancing product quality.
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Figure CN119252734A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of wafer electrode processing technology, and in particular to a process for electroplating independent wafer electrodes. Background Art
[0002] The patent with publication number CN116994948A discloses a chip electrode preparation method and a semiconductor device. The chip electrode preparation method is to form an upper electrode photolithography pattern on a wafer, and then form a metal film, but without a stripping process; apply photoresist on the metal film, and perform photolithography to form an electroplating photolithography pattern; electrify the metal film in the electrode photolithography pattern through an upper power channel, and prepare the electrode by electroplating. The above-mentioned electrode preparation method uses the upper power channel to connect the electrode for electroplating to thicken Au. Since the surface of the wafer is usually a semiconductor and an insulator, the resistance is large or the insulation leads to poor electroplating uniformity or no conductivity.
[0003] Therefore, a layer of photoresist is used during photolithography. After evaporation, the metal on the photoresist is connected to the metal on the wafer. Then, the electroplating photolithography is performed to cover the metal that does not need to be electroplated with photoresist. After electroplating, the photoresist is dissolved with a degumming solution, and then the metal on the surface of the photoresist is torn and peeled off with strong methods such as high-pressure water or ultrasound. At the same time, the process of thickening Au without connecting the electrode is adopted, that is, electron beam evaporation is used to thicken Au. When the electron beam evaporates the bottom layer TiPtAu, part of TiPtAu is retained to connect the unconnected electrode. After electroplating, the extra TiPtAu used for connection is dry-etched to achieve the purpose of thickening Au without connecting the electrode.
[0004] The above-mentioned Au thickening process without connecting the electrode has the following disadvantages: The method of using electroplating to connect the metal on the photoresist with the metal on the wafer for conductivity and then stripping it has the following disadvantages: the metal on the photoresist needs to be connected to the metal on the wafer for conductivity, and the metal on the photoresist must be torn off when stripping it off, which will cause tear marks on the edge of the electrode, and will result in poor appearance for products with high requirements on appearance.
[0005] The disadvantage of the process of electron beam evaporation of Au and then stripping off Au is that it is expensive. Because the electron beam evaporation process is a large-area evaporation process that cannot control the range, most of the Au material actually used is attached to the ineffective area, resulting in a waste of expensive Au (target material) and increasing the manufacturing cost.
[0006] The process of keeping part of TiPtAu connected after electroplating and then etching away TiPtAu. Because over-etching is required to ensure clean etching, the plasma during over-etching will bombard the wafer surface and cause surface damage. Summary of the invention
[0007] The invention provides a process for electroplating independent electrodes on wafers, which solves the problems of high target material cost and poor electrode outer tube in the prior art.
[0008] The technical solution of the present invention is achieved in this way: A process for electroplating independent electrodes on wafers, comprising: S1, manufacturing independent electrodes; S2, electroplating and thickening independent electrodes; the independent electrodes refer to electrodes on the wafer being independent of each other, that is, when electrodes are made and thickened on the wafer, there is no electrical channel on the wafer, and the electrodes are not connected to each other. The electrodes are made and thickened in steps, and when thickening the electrodes, only the electrode positions are thickened to avoid the target material from adhering to the invalid area and reduce the waste of the target material.
[0009] In S2, the electroplating thickened independent electrode includes: S2.1, a conductive layer is made on the surface of the wafer, and the conductive layer covers the independent electrodes; the conductive layer connects the independent electrodes, and then the independent electrodes are connected into a whole during electroplating, so that the electrodes can be thickened by electroplating simultaneously to ensure the consistency of electrode thickening.
[0010] S2.2, apply electroplating photoresist on the conductive layer and perform photolithography to form an electroplating pattern, expose the part that needs to be electroplated and thickened, and cover the part that does not need to be electroplated with photoresist; the thickness of the electroplating photoresist is greater than the thickness of the electrode thickening to ensure that the upper ends of each electrode remain independent of each other after the electrode is electroplated and thickened.
[0011] S2.3, electroplating to thicken the thickness of Au on the independent electrode to form a thickened Au layer; using electroplating equipment and electroplating Au solution to electroplating thicken the electrode on the wafer.
[0012] S2.4, using an organic solution to dissolve the electroplated photoresist on the conductive layer; cleaning the electroplated photoresist on the surface of the wafer to expose the thickened independent electrode.
[0013] S2.5, the conductive layer is etched, and the independent electrodes are electroplated to be thickened. The connection between the electrodes is disconnected by etching the conductive layer, so that the electrodes on the wafer are in an independent state again to meet the use requirements of subsequent wafers.
[0014] In S2.1, a Ti layer and an Au layer are sequentially sputtered on the surface of a wafer using a magnetron sputtering device, or a Ti layer and an Au layer are sequentially evaporated on the surface of a wafer using an electron beam evaporation device, and the Ti layer and the Au layer together form a conductive layer. The Ti layer and the Au layer are evenly laid on the surface of the wafer so that each independent electrode is connected to each other.
[0015] The thickness of the Ti layer is 30-50 nm, and the thickness of the Au layer is 30-50 nm. Specifically, the thickness of the Ti layer is 30 nm, and the thickness of the Au layer is 50 nm.
[0016] In S2.2, the electroplating contact pattern is formed when the electroplating photoresist is photolithographically processed. The electroplating contact pattern can expose the area on the conductive layer that does not need to be electroplated, so as to facilitate the connection of the conductive layer to electricity during subsequent electroplating. Specifically, there are two electroplating contact patterns on the electroplating photoresist.
[0017] In S2.3, the thickness of the thickened Au layer is 1~5um.
[0018] In S2.5, etching the conductive layer includes: S2.5.1, apply etching photoresist on the wafer and perform photolithography to form an etching pattern, and the etching photoresist blocks the thickened Au layer; the location of the thickened Au is the location that does not need to be corroded, and is blocked with the etching photoresist; the conductive layer between each independent electrode is the area that needs to be corroded.
[0019] S2.5.2, corrode the Au layer on the surface of the wafer; use corrosion to ensure that the Au layer between each independent electrode is cleaned.
[0020] S2.5.3, corrode the Ti layer on the surface of the wafer; use corrosion to ensure that the Ti layer between each independent electrode is cleaned, so that each electrode is restored to an independent state, while ensuring the integrity of the wafer surface and avoiding damage to the wafer surface.
[0021] S2.5.4, removing the etching photoresist on the thickened Au layer. Use an organic solution to remove the etching photoresist on the thickened Au layer, and the electrode electroplating thickening process is completed.
[0022] In S2.5.2, the Au layer is corroded by potassium iodide solution. In S2.5.3, the Ti layer is corroded by BOE solution. The Au layer between each electrode is corroded and cleaned by potassium iodide solution, and the Ti layer between each electrode is corroded by BOE solution to ensure that the conductive layer on the wafer is cleaned.
[0023] In S1, manufacturing independent electrodes includes: S1.1, making a suspended electrode photolithography pattern on the surface of the wafer; the suspended electrode photolithography pattern can make the manufactured electrode have no connection with the metal on the photoresist, avoid the tearing marks on the edge of the electrode when removing the photoresist, and improve the appearance quality of the electrode.
[0024] S1.2, electron beam evaporates TiPtAu to make independent electrodes; due to the effect of the suspended electrode photolithography pattern, the metal on the photoresist surface is separated from the metal on the wafer surface.
[0025] S1.3, dissolving the photoresist on the surface of the wafer, and the TiPtAu on the surface of the photoresist falls off with the photoresist to obtain an independent electrode. When the TiPtAu on the surface of the photoresist falls off, it will not affect the electrode on the surface of the wafer, thus ensuring the appearance quality of the independent electrode.
[0026] In S1.1, the suspended electrode photoresist pattern includes a lower photoresist layer and an upper photoresist layer; photoresist patterns are arranged on the lower photoresist layer and the upper photoresist layer, the photoresist pattern size of the lower photoresist layer is larger than the independent electrode size, and the thickness of the lower photoresist layer is larger than the electrode thickness; the photoresist pattern size of the upper photoresist layer is equal to the electrode pattern size. The lower photoresist layer provides support for the upper photoresist layer, and when the electron beam evaporates the metal, the metal on the upper photoresist layer is separated from the metal on the wafer.
[0027] The beneficial effects produced by the present invention are: 1. When thickening the independent electrode, there is an invalid area on the wafer, that is, other areas on the wafer except the independent electrode. The invalid area is shielded by photoresist. During the electroplating process, only the electrode position is thickened, and no electroplating is performed in the invalid area, which effectively avoids the waste of Au materials and reduces manufacturing costs.
[0028] 2. When using electron beam evaporation of metal to manufacture independent electrodes, due to the effect of the suspended electrode photolithography pattern, there is no connection between the independent electrode and the metal on the photoresist; when the photoresist is dissolved, the metal on the photoresist falls off directly, and no tearing marks will appear on the edge of the independent electrode, thereby improving the appearance quality of the independent electrode.
[0029] 3. After the independent electrode is electroplated and thickened, the conductive layer on the wafer is removed by corrosion, which can effectively ensure the integrity of the wafer surface and avoid damage to the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0031] Figure 1 This is a process flow chart of the present invention for electroplating independent electrodes on wafers; Figure 2 The process flow chart for etching the conductive layer is as follows; Figure 3 Schematic diagram of the wafer and photoresist structure in step S1.1; Figure 4 Schematic diagram of the structure after electron beam evaporation in step S1.2; Figure 5 Schematic diagram of the independent electrode structure after the photoresist is removed in step S1.3; Figure 6 Schematic diagram of the conductive layer structure in step S2.1; Figure 7 This is a schematic diagram of the structure after the photolithography and electroplating pattern in step S2.2; Figure 8 Schematic diagram of the structure after Au electroplating in step S2.3; Fig. 9 Schematic diagram of the structure after the photoresist is removed in step S2.4; Fig.10 This is a schematic diagram of the structure after the photolithography etching pattern in step S2.5.1; Fig.11 Schematic diagram of the structure after Au is etched in step S2.5.2; Fig.12 Schematic diagram of the structure after Ti is corroded in step S2.5.3; Fig.13 Schematic diagram of the independent electrode structure on the wafer in step S2.5.4.
[0032] In the figure: 1. wafer, 2. lower photoresist, 3. upper photoresist, 4. independent electrode, 5. Ti layer, 6. Au layer, 7. electroplated photoresist, 8. thickened Au layer, 9. etched photoresist. DETAILED DESCRIPTION
[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0034] Embodiment 1, as Figure 1 As shown, a process for electroplating independent electrodes on wafers includes: S1, manufacturing independent electrodes 4; S2, electroplating and thickening independent electrodes 4; the independent electrodes 4 refer to electrodes on wafer 1 that are independent of each other and have no connection relationship. The manufacturing of independent electrodes 4 and the thickening of independent electrodes 4 are carried out in steps. When thickening the electrodes, only the electrode positions are thickened to avoid the target material from adhering to the invalid area and reduce the waste of target material. The invalid area is the other area on wafer 1 except the independent electrode 4.
[0035] Further, in S2, electroplating and thickening the independent electrode 4 includes: S2.1, such as Figure 6As shown, a conductive layer is made on the surface of the wafer 1, and the conductive layer covers the independent electrode 4; specifically, a Ti layer 5 and an Au layer 6 are sequentially sputtered on the surface of the wafer 1 using a magnetron sputtering device, and the Ti layer 5 and the Au layer 6 form a conductive layer, and the thickness of the Ti layer 5 is 30-50nm, and the thickness of the Au layer 6 is 30-50nm. In this embodiment, the thickness of the Ti layer 5 is 30nm, and the thickness of the Au layer 6 is 50nm. The conductive layer connects the independent electrodes 4, and the independent electrodes 4 are connected into a whole during electroplating, so that the electrodes can be electroplated and thickened synchronously to ensure the consistency of electrode thickening.
[0036] S2.2, such as Figure 7 As shown, a plating photoresist 7 is coated on the conductive layer and photolithography is performed to form a plating pattern, exposing the portion that needs to be thickened by electroplating, and shielding the portion that does not need to be electroplated with the plating photoresist 7; specifically, the plating pattern is in the shape of an independent electrode 4, and the plating photoresist 7 shields the area between each independent electrode 4, and the independent electrodes 4 on the wafer 1 are exposed; wherein the thickness of the plating photoresist 7 is greater than the thickness that the independent electrode 4 needs to be thickened, thereby ensuring that the upper ends of each independent electrode 4 remain independent of each other after the independent electrode 4 is thickened by electroplating.
[0037] S2.3, such as Figure 8 As shown, the thickness of Au on the independent electrode 4 is thickened by electroplating to form a thickened Au layer 8; the electrode on the wafer 1 is electroplated and thickened using an electroplating device and an Au electroplating solution.
[0038] S2.4, such as Fig. 9 As shown, an organic solution is used to dissolve the electroplated photoresist 7 on the conductive layer; the electroplated photoresist 7 on the surface of the wafer 1 is cleaned to expose the thickened independent electrode 4.
[0039] S2.5, the conductive layer is corroded, and the independent electrode 4 is electroplated to be thickened. The connection between the electrodes is disconnected by corroding the conductive layer, so that the electrodes on the wafer 1 are in an independent state again to meet the subsequent use requirements of the wafer 1.
[0040] When the independent electrode 4 is thickened, the ineffective area on the wafer 1 is shielded by photoresist, and only the electrode position is thickened during the electroplating process, and no electroplating is performed on the ineffective area, which effectively avoids the waste of Au material and reduces the manufacturing cost.
[0041] Further, in S2.2, the electroplating contact pattern is formed when the electroplating photoresist 7 is photolithographed. The electroplating contact pattern can expose the area on the conductive layer that does not need to be electroplated, so as to facilitate the connection of the conductive layer to electricity during subsequent electroplating; specifically, there are two electroplating contact patterns on the electroplating photoresist 7.
[0042] Further, in S2.3, the thickness of the electroplated Au is 1-5 um. When the electroplated pattern is photoetched on the conductive layer, the thickness of the electroplated photoresist 7 is greater than 5 um, ensuring that the upper ends of the independent electrodes 4 remain independent of each other after the electroplated thickening.
[0043] Example 2, based on Example 1, a process for electroplating independent electrodes on a wafer, in S2.5, as Figure 2 As shown, the corroded conductive layer includes: S2.5.1, e.g. Fig.10 As shown, an etching photoresist 9 is applied on the wafer 1 and photolithography is performed to form an etching pattern, and the thickened Au layer 8 is blocked by the etching photoresist 9; the etching pattern is the area between each independent electrode 4, that is, the position of the independent electrode 4 after the thickening of Au is the position that does not need to be corroded, and is blocked by the etching photoresist 9; the area between each independent electrode 4 is exposed, so that in the subsequent etching, only the conductive layer between each independent electrode 4 is corroded, and the independent electrode 4 after the thickening of Au will not be corroded.
[0044] S2.5.2, if Fig.11 As shown, the Au layer 6 on the surface of the wafer 1 is etched; the Au layer 6 is etched with potassium iodide etching solution. The potassium iodide etching solution is used to etch and clean the Au layer 6 between each electrode, and the etching method is used to ensure that the Au layer 6 between each independent electrode 4 is cleaned.
[0045] S2.5.3, if Fig.12 As shown, the Ti layer 5 on the surface of the wafer 1 is corroded; the Ti layer 5 is corroded using a BOE solution. The BOE solution corrodes the Ti layer 5 between the electrodes to ensure that the conductive layer on the wafer 1 is cleaned; at the same time, the conductive layer on the wafer 1 is removed by corrosion, which can effectively ensure the integrity of the surface of the wafer 1 and avoid damage to the surface of the wafer 1. S2.5.4, if Fig.13 As shown, the etching photoresist 9 on the thickened Au layer 8 is removed. The etching photoresist 9 on the thickened Au layer 8 is removed using an organic solution, and the electrode electroplating thickening process is completed.
[0046] Embodiment 3, as Figure 1 As shown, a process for electroplating an independent electrode on a wafer includes: S1, manufacturing an independent electrode 4; S2, electroplating and thickening the independent electrode 4; In S1, manufacturing the independent electrode 4 comprises: S1.1, such as Figure 3As shown, a suspended electrode photolithography pattern is made on the surface of a wafer 1; the suspended electrode photolithography pattern includes a lower photoresist 2 and an upper photoresist 3; photolithography patterns are provided on both the lower photoresist 2 and the upper photoresist 3, the photolithography pattern size of the lower photoresist 2 is larger than the size of the independent electrode 4, and the height of the lower photoresist 2 is larger than the height of the electrode; the photolithography pattern size of the upper photoresist 3 is equal to the electrode pattern size. The suspended electrode photolithography pattern can make the manufactured electrode have no connection with the metal on the photoresist, avoid the tearing marks on the electrode edge when removing the photoresist, and improve the appearance quality of the electrode.
[0047] S1.2, such as Figure 4 As shown, TiPtAu is evaporated by electron beam to make an independent electrode 4; the Ti layer 5, the Pt layer and the Au layer 6 are evaporated in sequence using an electron beam evaporation device. Due to the effect of the suspended electrode photolithography pattern, the TiPtAu on the photoresist surface is separated from the TiPtAu on the surface of the wafer 1.
[0048] S1.3, such as Figure 5 As shown, the photoresist on the surface of the wafer 1 is dissolved, and the TiPtAu on the surface of the photoresist falls off with the photoresist to obtain an independent electrode 4. When the TiPtAu on the surface of the photoresist falls off, it will not affect the electrode on the surface of the wafer 1, thereby ensuring the appearance quality of the independent electrode 4.
[0049] In S2, electroplating and thickening the independent electrode 4 includes: S2.1, such as Figure 6 As shown, a conductive layer is made on the surface of the wafer 1, and the conductive layer covers the independent electrode 4; specifically, an electron beam evaporation device is used to sequentially evaporate a Ti layer 5 and an Au layer 6 on the surface of the wafer 1, and the Ti layer 5 and the Au layer 6 form a conductive layer, wherein the thickness of the Ti layer 5 is 30nm, and the thickness of the Au layer 6 is 50nm. The conductive layer connects the independent electrodes 4, and the independent electrodes 4 are connected into a whole during electroplating, so that the electrodes can be electroplated and thickened synchronously to ensure the consistency of electrode thickening.
[0050] S2.2, such as Figure 7 As shown, a plating photoresist 7 is coated on the conductive layer and photolithography is performed to form a plating pattern, exposing the portion that needs to be thickened by electroplating, and shielding the portion that does not need to be electroplated with the plating photoresist 7; specifically, the plating pattern is in the shape of an independent electrode 4, and the plating photoresist 7 shields the area between each independent electrode 4, and the independent electrodes 4 on the wafer 1 are exposed; wherein the thickness of the plating photoresist 7 is greater than the thickness that the independent electrode 4 needs to be thickened, thereby ensuring that the upper ends of each independent electrode 4 remain independent of each other after the independent electrode 4 is thickened by electroplating.
[0051] S2.3, such as Figure 8As shown, the thickness of Au on the independent electrode 4 is thickened by electroplating to form a thickened Au layer 8; the motor on the wafer 1 is electroplated and thickened using an electroplating device and an Au electroplating solution.
[0052] S2.4, such as Fig. 9 As shown, an organic solution is used to dissolve the electroplated photoresist 7 on the conductive layer; the electroplated photoresist 7 on the surface of the wafer 1 is cleaned to expose the thickened independent electrode 4.
[0053] S2.5, the conductive layer is corroded, and the independent electrode 4 is electroplated to be thickened. The connection between the electrodes is disconnected by corroding the conductive layer, so that the electrodes on the wafer 1 are in an independent state again to meet the subsequent use requirements of the wafer 1.
[0054] When the independent electrode 4 is thickened, the ineffective area on the wafer 1 is shielded by photoresist, and only the electrode position is thickened during the electroplating process, and no electroplating is performed on the ineffective area, which effectively avoids the waste of Au material and reduces the manufacturing cost.
[0055] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims
1. A process for electroplating independent electrodes on wafers, characterized in that: include: S1, fabrication of independent electrodes (4); S2, electroplated thickened independent electrode (4); In S2, electroplating thickened independent electrodes (4) includes: S2.1, forming a conductive layer on the surface of the wafer (1), wherein the conductive layer covers the independent electrode (4); S2.2, coating the conductive layer with electroplating photoresist (7) and performing photolithography to form an electroplating pattern, exposing the portion to be electroplated and thickened, and masking the portion not to be electroplated with photoresist; S2.3, electroplating to thicken the thickness of Au on the independent electrode (4) to form a thickened Au layer (8); S2.4, dissolving the electroplated photoresist (7) on the conductive layer using an organic solution; S2.5, the conductive layer is corroded and the electroplating thickened independent electrode (4) is completed.
2. The process for electroplating wafer-independent electrodes according to claim 1, characterized in that: In S2.1, a Ti layer (5) and an Au layer (6) are sequentially sputtered on the surface of the wafer (1) using a magnetron sputtering device, or a Ti layer (5) and an Au layer (6) are sequentially evaporated on the surface of the wafer (1) using an electron beam evaporation device, and the Ti layer (5) and the Au layer (6) together form a conductive layer.
3. The process for electroplating wafer-independent electrodes according to claim 2, characterized in that: The thickness of the Ti layer (5) is 30-50 nm, and the thickness of the Au layer (6) is 30-50 nm.
4. The process for electroplating wafer-independent electrodes according to claim 1, characterized in that: In S2.2, when the electroplating photoresist (7) is photolithographically processed, a pattern of electroplating contacts is photolithographically processed.
5. The process for electroplating wafer-independent electrodes according to claim 1, characterized in that: In S2.3, the thickness of the thickened Au layer (8) is 1~5um.
6. The process for electroplating wafer-independent electrodes according to any one of claims 1 to 5, characterized in that: In S2.5, etching the conductive layer includes: S2.5.1, coating an etching photoresist (9) on the wafer (1) and performing photolithography to form an etching pattern, wherein the etching photoresist shields the thickened Au layer (8); S2.5.2, etching the Au layer (6) on the surface of the wafer (1); S2.5.3, etching the Ti layer (5) on the surface of the wafer (1); S2.5.4, removing the etched photoresist (9) on the thickened Au layer (8).
7. The process for electroplating wafer-independent electrodes according to claim 6, characterized in that: In S2.5.2, the Au layer (6) is corroded using potassium iodide etching solution.
8. The process for electroplating wafer-independent electrodes according to claim 6, characterized in that: In S2.5.3, the Ti layer (5) is etched using a BOE solution.
9. The process for electroplating wafer-independent electrodes according to any one of claims 1 to 5, 7 and 8, characterized in that: In S1, manufacturing an independent electrode (4) includes: S1.1, forming a suspended electrode photolithography pattern on the surface of the wafer (1); S1.2, electron beam evaporation of TiPtAu to make independent electrodes (4); S1.3, dissolving the photoresist on the surface of the wafer (1), causing the TiPtAu on the surface of the photoresist to fall off along with the photoresist, thereby obtaining an independent electrode (4).
10. The process for electroplating wafer-independent electrodes according to claim 9, characterized in that: In S1.1, the suspended electrode photolithography pattern includes a lower photoresist layer (2) and an upper photoresist layer (3); both the lower photoresist layer (2) and the upper photoresist layer (3) are provided with photolithography patterns, the photolithography pattern size of the lower photoresist layer (2) is larger than the size of the independent electrode (4), and the thickness of the lower photoresist layer (2) is larger than the thickness of the electrode; and the photolithography pattern size of the upper photoresist layer (3) is equal to the electrode pattern size.