Side etching measurement method, device and equipment for wet etching product
By real-time data acquisition and calculation of the side etching amount of semiconductor products, the problem of cumbersome and high cost of confirming the side etching amount in the etching process of semiconductor products is solved, improving measurement efficiency and reducing costs.
Patent Information
- Application Number
- CN202411341176.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-01-03
AI Technical Summary
In the etching process of semiconductor products, the prior art requires multiple confirmation of side etching, resulting in low sheet efficiency, high cost and cumbersome confirmation process. The focus ion beam FIB can only represent the results of the adjacent wafer etching around the surrounding area, and cannot represent the whole etching amount of wafer.
By obtaining the workpiece to be measured and its monitoring cross-sectional diagram, it is divided into small rectangles to obtain initial and final length data, calculate the side etching rate and side etching amount, and adopt the side etching measurement method and device of wet etching products, including data acquisition modules and etching data Acquire modules and calculation modules, obtain etching time and length data in real time, and calculate the side etching rate and side etching amount.
The measurement efficiency of the side etching amount is greatly improved, manpower is saved, measurement costs are reduced, and the confirmation process of the etching amount is simplified, and the frequent use of the focused ion beam FIB is avoided.
Smart Images
Figure CN119252751A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor process etching technology, and in particular, relates to a side etching measurement method, device and equipment for wet etching products. Background Art
[0002] In semiconductor technology, when the p-mesa process is used to etch semiconductor products, due to the structural size of the semiconductor products, it is necessary to ensure that no serious side etching occurs while the etching is clean, so as to avoid structural abnormalities of the semiconductor products. This can be understood as: the semiconductor products need to be over-etched, but not too heavily over-etched.
[0003] like Figure 8 As shown in FIG. 1 , during the process of processing semiconductor products using the p-mesa process, a metal layer metal in contact with the P-type semiconductor is deposited on the p-mesa pattern, such as Figure 8 a, and apply a positive resistor on the metal layer metal, and expose and develop the positive resistor to obtain Figure 8 b, the first etching structure is measured by a thickness measuring instrument to measure the thickness T1 of the first etching structure before the first etching structure is wet-etched to obtain the following Figure 8 The second etched structure of c, using a thickness gauge will Figure 8 The c station measures the thickness T2 of the p-mesa pattern in the Y direction; the difference between the thickness T2-T1 confirms whether the etching operation of the semiconductor product is clean; if the difference is too small, additional etching can be performed at this time; Figure 8 As shown in e, Figure 8 In the c stage, it is impossible to confirm the amount of side erosion using a microscope or a thickness gauge. To confirm the amount of side erosion, a focused ion beam FIB is used to confirm the cross section. The cross-sectional view is as follows: Figure 8 e shows that the amount of side etching can be confirmed and whether the etching is clean.
[0004] In the actual operation of etching semiconductor products, there are cases where the etching is not complete after the first supplementary etching, and then the focused ion beam FIB is used to confirm the cross section. In the actual tape-out of semiconductor products, there are cases where the etching rate of the etching solution fluctuates. For example, the last batch of etching took 30 seconds to etch completely, but the current etching is not completely etched in 30 seconds. More often, the focused ion beam FIB is used to confirm the side etching amount after supplementary etching to avoid abnormal device structure. Structural abnormalities such as Figure 8 As shown in d (the p-mesa pattern is etched to the bottom of the metal layer metal). Therefore, there is a problem that the wafers for processing semiconductor products are not etched cleanly, and most of the time, focused ion beam FIB is used to confirm it.
[0005] From the above, it can be seen that the problems existing in the process of etching semiconductor products using the p-mesa process are: first, after etching the semiconductor products, in order to confirm the etching structure of the semiconductor products, the side etching amount needs to be confirmed many times, and the wafer flow efficiency is low; second, the use of focused ion beam FIB is more, the cost of processing semiconductor products increases, and there are many shots of the whole wafer. The focused ion beam FIB results can only represent the etching results of the surrounding adjacent wafers, and cannot represent the etching amount of the entire wafer; third, the process of confirming the etching amount is cumbersome and requires a large amount of manpower. Summary of the invention
[0006] An embodiment of the present application provides a side etching measurement method, device and equipment for wet-etched products to solve the problem of complicated and high cost process for confirming the etching amount in the existing etching process for processing semiconductor products.
[0007] In a first aspect, an embodiment of the present application provides a side etching measurement method for a wet-etched product, comprising the following steps:
[0008] Acquire a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire first length data of a figure composed of a minimum number of the small rectangles;
[0009] Etching the workpiece and obtaining a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched, obtaining the etching time and second length data of the etching corresponding to the monitoring cross-sectional view at this time;
[0010] The side etching rate and side etching amount of the workpiece are calculated based on the etching time, the second length data and the first length data.
[0011] Optionally, calculating according to the etching time, the second length data and the first length data to obtain the side etching rate and the side etching amount of the workpiece includes: calculating according to the product of the second length data divided by the etching time and the first length data to obtain the side etching rate of the workpiece; calculating according to the product of the side etching rate and the etching time to obtain the side etching amount of the workpiece.
[0012] Optionally, the small rectangle is a square or a rectangle.
[0013] Optionally, the side etching measurement method of the wet-etched product includes: using a microscope to observe in real time the photoresist pattern of the monitoring cross-sectional image of the etching of the workpiece.
[0014] Optionally, the side etching measurement method of the wet-etched product includes: if a supplementary etching operation is performed on the workpiece, the side etching rate is used as the rate of the etching liquid to supplement the workpiece.
[0015] In a second aspect, an embodiment of the present application provides a side etching measurement method for a wet-etched product, comprising the following steps:
[0016] Acquire a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire first length data of a figure composed of a minimum number of the small rectangles;
[0017] Etching the workpiece and obtaining a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched, obtaining the etching time and second length data of the etching corresponding to the monitoring cross-sectional view at this time;
[0018] The side etching rate of the workpiece is calculated based on the etching time, the second length data and the first length data; and the side etching amount of the workpiece is measured by measuring the etching amount of the monitoring cross-sectional image corresponding to the second length data through a measuring device to obtain the side etching amount of the workpiece.
[0019] Optionally, the side etching measurement method of the wet-etched product includes: using a thickness measuring instrument as the measuring device to measure the etching amount of the monitoring cross-sectional view corresponding to the second length data to obtain the side etching amount of the workpiece.
[0020] Optionally, calculating based on the etching time, the second length data and the first length data to obtain the side etching rate of the workpiece includes: calculating based on the product of the second length data divided by the etching time and the first length data to obtain the side etching rate of the workpiece.
[0021] In a third aspect, an embodiment of the present application provides a side etching measurement device for a wet-etched product, comprising: a data acquisition module, an etching data acquisition module, and a calculation module;
[0022] The data acquisition module is used to acquire the workpiece to be measured and the monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire the first length data of the figure composed of the minimum number of the small rectangles;
[0023] The etching data acquisition module is used to etch the workpiece and acquire a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched to acquire the etching time and the second length data of the etching corresponding to the monitoring cross-sectional view at this time;
[0024] The calculation module is used to calculate the side etching rate and side etching amount of the workpiece according to the etching time, the second length data and the first length data.
[0025] In a fourth aspect, an embodiment of the present application provides a side etching measurement device for a wet-etched product, comprising a processor and a memory;
[0026] The memory is used to store program codes and transmit the program codes to the processor;
[0027] The processor is used to execute the side etching measurement method of the wet-etched product according to the instructions in the program code.
[0028] An embodiment of the present application provides a side etching measurement method, device and equipment for a wet etching product, the side etching measurement method includes obtaining a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, dividing the monitoring cross-sectional figure into a number of small rectangles according to the photoresist figure of the workpiece and obtaining the first length data of the figure composed of the minimum number of small rectangles; etching the workpiece and obtaining the monitoring cross-sectional figure of the workpiece after etching in real time until the photoresist figure of the monitoring cross-sectional figure is completely etched to obtain the etching time and the second length data of the monitoring cross-sectional figure corresponding to the etching at this time; according to the etching time, the second length data and the first length data, the side etching rate and the side etching amount of the workpiece are calculated. Obtaining the side etching rate and the side etching amount of the workpiece by the side etching measurement method of the wet etching product can avoid the confirmation of the side etching amount by the focused ion beam FIB, greatly improve the measurement efficiency of the side etching amount, and also facilitate the daily monitoring of the workpiece processing, save manpower, and have low measurement costs, solving the problem of cumbersome and high cost procedures for confirming the etching amount in the existing etching process for processing semiconductor products. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solution in an embodiment of the present application, the following briefly introduces the drawings required for use in the description of the embodiment. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can also obtain other drawings based on these drawings without creative work.
[0030] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.
[0031] Figure 1 A flowchart of the steps of a side etching measurement method for a wet-etched product provided in one embodiment of the present application.
[0032] Figure 2 A top view corresponding to a monitored cross-sectional pattern in a side etching measurement method for a wet-etched product provided in one embodiment of the present application.
[0033] Figure 3A monitoring cross-sectional graphic diagram in a side etching measurement method for a wet-etched product provided in one embodiment of the present application.
[0034] Figure 4 A monitoring cross-sectional view of a side etching measurement method for a wet-etched product provided by one embodiment of the present application.
[0035] Figure 5 A top view corresponding to a monitoring cross-sectional view in a side etching measurement method for a wet-etched product provided by an embodiment of the present application.
[0036] Figure 6 A flow chart of the steps of a side etching measurement method for a wet-etched product provided in another embodiment of the present application.
[0037] Figure 7 A framework diagram of a side etching measurement device for a wet etching product provided according to another embodiment of the present application.
[0038] Figure 8 A diagram of the p-mesa process being processed for an existing semiconductor product. DETAILED DESCRIPTION
[0039] The following will be combined with the drawings in one embodiment of the present application to clearly and completely describe the technical solution in one embodiment of the present application. Obviously, the described embodiment is only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application.
[0040] Patent terms:
[0041] GaAs refers to gallium arsenide.
[0042] Wafer shot refers to the exposure area of the wafer by the stepper during the lithography process. This area contains several chip patterns.
[0043] Photoresist graphics refers to the process and result of transferring the designed circuit pattern to the semiconductor material through photolithography technology during the semiconductor manufacturing process.
[0044] An embodiment of the present application provides a side etching measurement method, device and equipment for wet-etched products to solve the problem of complicated and high cost process for confirming the etching amount in the existing etching process for processing semiconductor products.
[0045] Embodiment 1:
[0046] An embodiment of the present application provides a side etching measurement method for a wet-etched product. For example, see Figure 1 , Figure 1 The flowchart of the steps of the side etching measurement method for a wet etching product provided by an embodiment of the present application Figure 2 The top view corresponding to the monitoring cross-sectional pattern in the side etching measurement method for a wet etching product provided by an embodiment of the present application Figure 3 The monitoring cross-sectional pattern diagram in the side etching measurement method for a wet etching product provided by an embodiment of the present application
[0047] As Figure 1 shown, the present invention provides a side etching measurement method for a wet etching product, including the following steps:
[0048] S100. Obtain the workpiece to be measured and the monitoring cross-sectional pattern corresponding to the workpiece. Divide the monitoring cross-sectional pattern into several small rectangles according to the photoresist pattern of the workpiece, and obtain the first length data of the figure formed by the minimum number of small rectangles;
[0049] S200. Etch the workpiece and obtain the monitoring cross-sectional view of the workpiece in real time until the photoresist pattern of the monitoring cross-sectional view is completely etched, obtain the etching time and the second length data of the monitoring cross-sectional view corresponding to the etching at this time;
[0050] S300. Calculate according to the etching time, the second length data and the first length data to obtain the side etching rate and the side etching amount of the workpiece.
[0051] Further, as Figure 2 and Figure 3 shown, in step S100, the workpiece can be a semiconductor to be etched, and obtain the monitoring cross-sectional pattern corresponding to the workpiece, as Figure 2 shown in a. In this embodiment, divide the monitoring cross-sectional pattern into several small rectangles according to the photoresist pattern of the workpiece, as Figure 2 shown in d, Figure 2 the figure formed by 4 small rectangles in d represents the cross-sectional view of the photoresist pattern in the workpiece. In step S100, the first length data of the figure formed by the minimum number of small rectangles is also obtained, providing data for calculating the side etching rate of the workpiece etching. In other embodiments, the workpiece can also be a metal gold medal, a speaker net, a contact of an electronic device, a pin, a terminal, a connector, etc. that need to be etched.
[0052] Further, the small rectangle can be selected as a square or a rectangle. In other embodiments, the small rectangle can also be set in other shapes according to requirements. In this embodiment, the rules for the small rectangle size are as follows: if the etching rate of the etching solution is A1 - A2 um / min (A1 < A2), then the small rectangle size can be designed as A1. For the convenience of explanation, if the monitoring cross-sectional pattern is a large square or a large rectangle composed of several small squares.
[0053] Figure 4A monitoring cross-sectional diagram of a side etching measurement method for a wet-etched product provided by an embodiment of the present application, Figure 5 A top view corresponding to a monitoring cross-sectional view in a side etching measurement method for a wet-etched product provided by an embodiment of the present application.
[0054] It is further explained that if Figure 4 and Figure 5 As shown, in step S200, the workpiece is etched, and a monitoring cross-sectional view of the workpiece after etching is obtained in real time. By observing the photoresist pattern of the monitoring cross-sectional view, it is determined whether the workpiece is completely etched to know whether the etching is clean. If the photoresist pattern of the monitoring cross-sectional view is completely etched (such as the photoresist falls off), it means that the etching of the workpiece is clean. In this embodiment, the side etching measurement method of the wet etching product also obtains the etching time when the photoresist pattern of the monitoring cross-sectional view is completely etched and the second length data of the etching corresponding to the monitoring cross-sectional view at this time. Among them, in step S200, the workpiece is etched at an etching rate of A1um / min.
[0055] It is further explained that in step S300, the side etching rate and side etching amount of the workpiece are calculated based on the etching time, the second length data and the first length data obtained in step S100 and step S200.
[0056] The side etching rate and amount of the workpiece obtained by the side etching measurement method of the wet etching product can avoid the focused ion beam FIB confirmation of the side etching amount, and the side etching rate and amount can be obtained by visual inspection under a microscope; the measurement efficiency of the side etching amount is greatly improved, and it is also convenient for daily monitoring of workpiece processing and saves manpower.
[0057] An embodiment of the present application provides a side etching measurement method for a wet etching product, including obtaining a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, dividing the monitoring cross-sectional figure into a number of small rectangles according to the photoresist figure of the workpiece and obtaining the first length data of the figure composed of the minimum number of small rectangles; etching the workpiece and obtaining the monitoring cross-sectional figure of the workpiece after etching in real time, until the photoresist figure of the monitoring cross-sectional figure is completely etched to obtain the etching time and the second length data of the monitoring cross-sectional figure corresponding to the etching at this time; according to the etching time, the second length data and the first length data, the side etching rate and the side etching amount of the workpiece are calculated. Obtaining the side etching rate and the side etching amount of the workpiece by the side etching measurement method of the wet etching product can avoid the confirmation of the side etching amount by the focused ion beam FIB, greatly improve the measurement efficiency of the side etching amount, and also facilitate the daily monitoring of the workpiece processing, save manpower, and have low measurement costs, solving the problem of cumbersome and high cost procedures for confirming the etching amount in the existing etching process for processing semiconductor products.
[0058] In the invention embodiment of the application, the side etching rate and the side etching amount of the workpiece are obtained according to the etching time, the second length data and the first length data, including: the side etching rate of the workpiece is calculated by dividing the second length data by the etching time and the first length data; the side etching amount of the workpiece is calculated by the product of the side etching rate and the etching time.
[0059] It is further explained that if Figure 5 As shown in the figure, if the length data from left to right on the monitoring cross-section are 5um, 4um, 3um, and 2um respectively, and after the etching time is 1min, when the length data of the monitoring cross-section is 2um and 3um, the corresponding photoresist pattern falls off. Then the first length data is 2, the second length data is selected as 3um, and the side etching rate of the workpiece is 3um / 2 / 1min=1.5um / min. The side etching amount of the corresponding workpiece is 1.5um.
[0060] In the invention embodiment of the application, the side etching measurement method of the wet-etched product includes: using a microscope to observe in real time the photoresist pattern of the monitoring cross-sectional image of the workpiece being etched.
[0061] It is further explained that the side etching measurement method of the wet etching product can quickly check whether there is a difference in the side etching amount of the entire surface of the monitoring cross-sectional image under an optical microscope OM, and check whether there is etching residue in the local area of the workpiece under the optical microscope OM. The area of the abnormal area (such as the local area of the workpiece with etching residue as the abnormal area) can be judged under the optical microscope OM; on this basis, the difference in side etching amount between the normal area and the abnormal area of the workpiece can be judged, and then a decision can be made whether to perform supplementary etching.
[0062] Because the etching residue in the abnormal area of the workpiece is remedied, the side etching amount of the abnormal area is significantly different from that of the normal area. At this time, the supplementary etching will cause a large area (original normal area) of the wafer to have structural abnormalities (may be etched below the metal layer). Therefore, in the invention embodiment of the application, the side etching measurement method of the wet etching product includes: if the workpiece is subjected to supplementary etching, the side etching rate is used as the rate of the etching solution to supplement the workpiece.
[0063] Embodiment 2:
[0064] Figure 6 A flow chart of the steps of a side etching measurement method for a wet-etched product provided in another embodiment of the present application.
[0065] like Figure 6 As shown, the present invention also provides a side etching measurement method for a wet-etched product, comprising the following steps:
[0066] S101. Obtain the workpiece to be measured and the monitoring cross-sectional graph corresponding to the workpiece. Divide the monitoring cross-sectional graph into several small rectangles according to the photoresist pattern of the workpiece, and obtain the first length data of the figure composed of the least number of small rectangles;
[0067] S102. Etch the workpiece and obtain the monitoring cross-sectional graph of the etched workpiece in real time until the photoresist pattern of the monitoring cross-sectional graph is completely etched, and obtain the etching time and the second length data of the corresponding monitoring cross-sectional graph at this time;
[0068] S103. Calculate based on the etching time, the second length data, and the first length data to obtain the side etching rate of the workpiece; and measure the etching amount of the monitoring cross-sectional graph corresponding to the second length data through a measuring device to obtain the side etching amount of the workpiece.
[0069] Further explanation is as follows. As Figure 2 and Figure 3 shown, the workpiece in step S101 can be a semiconductor to be etched, and obtain the monitoring cross-sectional graph corresponding to the workpiece, as Figure 2 shown in a. In this embodiment, divide the monitoring cross-sectional graph into several small rectangles according to the photoresist pattern of the workpiece, as Figure 2 shown in d. Figure 2 The figure composed of 4 small rectangles in d represents the cross-sectional view of the photoresist pattern in the workpiece. In step S101, also obtain the first length data of the figure composed of the least number of small rectangles, which provides data for calculating the side etching rate of the workpiece etching in the follow-up. In other embodiments, the workpiece can also be a metal gold medal, a speaker net, a contact of an electronic device, a pin, a terminal, a connector, etc. that need to be etched.
[0070] Further explanation is as follows. The small rectangle can be selected as a square or a rectangle. In other embodiments, the small rectangle can also be set in other shapes according to requirements. In this embodiment, the size rule of the small rectangle is as follows: If the etching rate of the etching solution is A1~A2 um / min (A1 < A2), then the size of the small rectangle can be designed as A1. For the convenience of explanation, if the monitoring cross-sectional graph is a large square or a large rectangle composed of several small squares.
[0071] Further explanation is as follows. As Figure 4 and Figure 5As shown, in step S102, the workpiece is etched, and a monitoring cross-sectional view of the workpiece after etching is obtained in real time. By observing the photoresist pattern of the monitoring cross-sectional view, it is determined whether the workpiece is completely etched to know whether the etching is clean. If the photoresist pattern of the monitoring cross-sectional view is completely etched (such as the photoresist falls off), it means that the etching of the workpiece is clean. In this embodiment, the side etching measurement method of the wet etching product also obtains the etching time when the photoresist pattern of the monitoring cross-sectional view is completely etched and the second length data of the etching corresponding to the monitoring cross-sectional view at this time. Among them, in step S102, the workpiece is etched at an etching rate of A1um / min.
[0072] It is further explained that in step S103, the side etching rate of the workpiece is calculated based on the etching time, the second length data and the first length data obtained in step S101 and step S102; the side etching amount of the workpiece is measured by measuring the etching amount of the monitoring cross-sectional image corresponding to the second length data through a measuring device. In this embodiment, the side etching amount of the workpiece is obtained by measuring the etching amount of the monitoring cross-sectional image corresponding to the second length data using a thickness measuring instrument as a measuring device.
[0073] The side etching rate and amount of the workpiece obtained by the side etching measurement method of the wet etching product can avoid the focused ion beam FIB confirmation of the side etching amount, and the side etching rate and amount can be obtained by visual inspection under a microscope; the measurement efficiency of the side etching amount is greatly improved, and it is also convenient for daily monitoring of workpiece processing and saves manpower.
[0074] In an embodiment of the invention of the application, the side etching rate and side etching amount of the workpiece are obtained based on the etching time, the second length data and the first length data, including: the side etching rate of the workpiece is obtained by calculating the product of the second length data by the etching time and the first length data.
[0075] It is further explained that if Figure 5 As shown in the figure, if the length data from left to right on the monitoring cross-section are 5um, 4um, 3um, and 2um respectively, and after the etching time is 1min, when the length data of the monitoring cross-section is 2um and 3um, the corresponding photoresist pattern falls off. Then the first length data is 2, the second length data is selected as 3um, and the side etching rate of the workpiece is 3um / 2 / 1min=1.5um / min.
[0076] The side etching rate and side etching amount of the workpiece obtained by the side etching measurement method of the wet etching product can avoid the focused ion beam FIB confirmation of the side etching amount, greatly improve the measurement efficiency of the side etching amount, and facilitate the daily monitoring of the workpiece processing, save manpower, and reduce the measurement cost, solving the problem of complicated and high cost process for confirming the etching amount in the existing etching process for processing semiconductor products.
[0077] Embodiment three:
[0078] Figure 7 The frame diagram of the side etching measurement device for the wet etching product provided by another embodiment of the present application.
[0079] As Figure 7 shown, the present invention also provides a side etching measurement device for a wet etching product, including: a data acquisition module 100, an etching data acquisition module 200, and a calculation module 300;
[0080] The data acquisition module 100 is configured to acquire a workpiece to be measured and a monitoring cross-sectional graph corresponding to the workpiece, divide the monitoring cross-sectional graph into a plurality of small rectangles according to the photoresist pattern of the workpiece, and acquire the first length data of the graph formed by the minimum number of small rectangles;
[0081] The etching data acquisition module 200 is configured to etch the workpiece and acquire the monitoring cross-sectional graph of the workpiece in real time until the photoresist pattern of the monitoring cross-sectional graph is completely etched, and acquire the etching time and the second length data of the monitoring cross-sectional graph corresponding to the etching at this time;
[0082] The calculation module 300 is configured to calculate based on the etching time, the second length data, and the first length data to obtain the side etching rate and the side etching amount of the workpiece.
[0083] Further explanation is that, as Figure 2 and Figure 3 shown, the workpiece in the data acquisition module 100 can be a semiconductor to be etched, and the monitoring cross-sectional graph corresponding to the workpiece can be acquired, as Figure 2 shown in a. In this embodiment, the monitoring cross-sectional graph is divided into a plurality of small rectangles according to the photoresist pattern of the workpiece, as Figure 2 shown in d, Figure 2 and the graph formed by 4 small rectangles in d represents the cross-sectional view of the photoresist pattern in the workpiece. In step S100, the first length data of the graph formed by the minimum number of small rectangles is also acquired, providing data for subsequent calculation of the side etching rate of the workpiece etching. In other embodiments, the workpiece can also be a metal gold medal, a speaker mesh, a contact of an electronic device, a pin, a terminal, a connector, etc. that need to be etched.
[0084] Further explanation is that the small rectangle can be selected as a square or a rectangle. In other embodiments, the small rectangle can also be set in other shapes according to requirements. In this embodiment, the small rectangle size rule is as follows: if the etching rate of the etching solution is A1 to A2 um / min (A1 < A2), then the small rectangle size can be designed as A1. For the convenience of explanation, if the monitoring cross-sectional graph is a large square or a large rectangle composed of a plurality of small squares.
[0085] Further explanation is that, as Figure 4 and Figure 5As shown, the etching data acquisition module 200 is used to perform etching on the workpiece and obtain the monitoring cross-sectional view of the workpiece after etching in real time. By observing the photoresist pattern of the monitoring cross-sectional view, it is determined whether the workpiece is completely etched to know whether the etching is clean. If the photoresist pattern of the monitoring cross-sectional view is completely etched (such as the photoresist falls off), it means that the etching of the workpiece is clean. In this embodiment, the side etching measurement method of the wet etching product also obtains the etching time when the photoresist pattern of the monitoring cross-sectional view is completely etched and the second length data of the etching corresponding to the monitoring cross-sectional view at this time. Among them, the etching data acquisition module 200 uses an etching rate of A1um / min to etch the workpiece.
[0086] It is further explained that the calculation module 300 is used to calculate the side etching rate and side etching amount of the workpiece according to the etching time, the second length data and the first length data obtained by the data acquisition module 100 and the etching data acquisition module 200.
[0087] The side etching measurement device of the wet etching product can obtain the side etching rate and side etching amount of the workpiece, which can avoid the focused ion beam FIB confirmation of the side etching amount. The side etching rate and side etching amount can be obtained by visual inspection under a microscope; the measurement efficiency of the side etching amount is greatly improved, and it is also convenient for daily monitoring of workpiece processing and saves manpower.
[0088] In an embodiment of the present invention, the side etching rate and side etching amount of the workpiece are obtained by the side etching measurement device of the wet etching product, which can avoid the focused ion beam FIB confirmation of the side etching amount, greatly improve the measurement efficiency of the side etching amount, and facilitate daily monitoring of workpiece processing, saving manpower, and low measurement cost, thereby solving the problem of complicated and high cost process for confirming the etching amount in the existing etching process for processing semiconductor products.
[0089] Embodiment 4:
[0090] The present invention also provides a side etching measurement device for a wet-etched product, comprising a processor and a memory;
[0091] A memory, used for storing program codes and transmitting the program codes to a processor;
[0092] The processor is used to execute the side etching measurement method of the wet-etched product according to the instructions in the program code.
[0093] In the embodiment of the present invention, the content of the side etching measurement method of the wet-etched product has been described in the first embodiment and the second embodiment, and will not be repeated in this embodiment.
[0094] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0095] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.
[0096] The side etching measurement method of the wet etching product provided by an embodiment of the present application is introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.
Claims
1. A side etching measurement method for a wet-etched product, characterized in that: The following steps are involved: Acquire a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire first length data of a figure composed of a minimum number of the small rectangles; Etching the workpiece and obtaining a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched, obtaining the etching time and second length data of the etching corresponding to the monitoring cross-sectional view at this time; The side etching rate and side etching amount of the workpiece are calculated based on the etching time, the second length data and the first length data.
2. The side etching measurement method of a wet-etched product according to claim 1, characterized in that: The side etching rate and the side etching amount of the workpiece are obtained by calculation based on the etching time, the second length data and the first length data, including: calculating the side etching rate of the workpiece based on the product of the second length data divided by the etching time and the first length data; and calculating the side etching amount of the workpiece based on the product of the side etching rate and the etching time.
3. The side etching measurement method of a wet-etched product according to claim 1 or 2, characterized in that: The small rectangle is a square or a rectangle.
4. The side etching measurement method of a wet-etched product according to claim 1 or 2, characterized in that: include: A microscope is used to observe in real time the photoresist pattern of the monitoring cross-sectional image of the etching of the workpiece.
5. The side etching measurement method of a wet-etched product according to claim 1 or 2, characterized in that: include: If a supplementary etching operation is performed on the workpiece, the side etching rate is used as the rate of the etching liquid to supplement the etching of the workpiece.
6. A method for measuring side etching of a wet-etched product, characterized in that: The following steps are involved: Acquire a workpiece to be measured and a monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire first length data of a figure composed of a minimum number of the small rectangles; Etching the workpiece and obtaining a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched, obtaining the etching time and second length data of the etching corresponding to the monitoring cross-sectional view at this time; Obtaining the side etching rate of the workpiece by calculation according to the etching time, the second length data and the first length data; And the etching amount of the monitoring cross-sectional view corresponding to the second length data is measured by a measuring device to obtain the side etching amount of the workpiece.
7. The side etching measurement method of a wet-etched product according to claim 6, characterized in that: include: The thickness measuring instrument is used as the measuring device to measure the etching amount of the monitoring cross-sectional view corresponding to the second length data to obtain the side etching amount of the workpiece.
8. The side etching measurement method of a wet-etched product according to claim 6, characterized in that: Obtaining the side etching rate of the workpiece by calculation based on the etching time, the second length data and the first length data includes: obtaining the side etching rate of the workpiece by calculation based on the product of the second length data and the etching time and the first length data.
9. A side etching measurement device for a wet-etched product, characterized in that: include: Data acquisition module, etching data acquisition module and calculation module; The data acquisition module is used to acquire the workpiece to be measured and the monitoring cross-sectional figure corresponding to the workpiece, divide the monitoring cross-sectional figure into a plurality of small rectangles according to the light resistance figure of the workpiece, and acquire the first length data of the figure composed of the minimum number of the small rectangles; The etching data acquisition module is used to etch the workpiece and acquire a monitoring cross-sectional view of the workpiece after etching in real time, until the photoresist pattern of the monitoring cross-sectional view is completely etched to obtain the etching time and the second length data of the etching corresponding to the monitoring cross-sectional view at this time; The calculation module is used to calculate the side etching rate and side etching amount of the workpiece according to the etching time, the second length data and the first length data.
10. A side etching measurement device for a wet-etched product, characterized in that: including a processor and a memory; The memory is used to store program codes and transmit the program codes to the processor; The processor is used to execute the side etching measurement method of the wet etching product according to any one of claims 1 to 9 according to the instructions in the program code.