Double-gas-inlet-channel gas mixing device and semiconductor thin film equipment

Abstract

The invention discloses a double-gas-inlet-channel gas mixing device and semiconductor thin film equipment. The double-gas-inlet-channel gas mixing device comprises a gas distribution block, a plurality of gas inlet cavity channels, a plurality of mixing cavity channels, a plurality of first-stage gas distribution cavity channels and a plurality of second-stage gas distribution cavity channels. The gas distribution block is arranged in a disc shape; the plurality of gas inlet cavities are oppositely arranged in the upper layer of the gas distribution block and are used for allowing various gases to enter; a plurality of mixing cavity channels are oppositely arranged in the upper layer of the gas distribution block, and each mixing cavity channel is communicated with all the gas inlet cavity channels; the plurality of first-stage gas distribution cavity channels are oppositely arranged in the lower layer of the gas distribution block and are communicated with the plurality of mixing cavity channels in a one-to-one correspondence manner; the multiple second-stage air distribution cavity channels are oppositely arranged in the lower air distribution block layer, and the first-stage air distribution cavity channel is at least communicated with the two second-stage air distribution cavity channels. According to the invention, multiple gases are uniformly mixed once and twice, so that the mixing uniformity of the multiple gases is improved, and the overall performance of the film is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a dual-inlet channel gas mixing device and a semiconductor thin film device. Background Art

[0002] In semiconductor thin film equipment, it is usually necessary to transport multiple gases into the reaction chamber, such as reaction gas, carrier gas, etc. There are usually two or more types of reaction gases, which need to be fully mixed and then uniformly transported into the reaction chamber so that chemical reactions can occur on the heated substrate surface and deposit to form the desired thin film.

[0003] In existing gas mixing devices, a common problem is how to fully mix multiple gases and evenly distribute the mixed gases along the gas inlet path and then transport them to the reaction chamber, which is particularly critical to improving the overall performance of the film. Summary of the invention

[0004] The purpose of the present invention is to provide a dual-inlet channel gas mixing device and a semiconductor thin film device, aiming to solve the problem of how to fully mix multiple gases and evenly distribute the mixed gases along the inlet path and then transport them to the reaction chamber.

[0005] In order to solve the above technical problems, the object of the present invention is achieved through the following technical solutions: providing a dual-intake channel gas mixing device, comprising:

[0006] The gas distributor block is arranged in a disc shape;

[0007] A plurality of air inlet channels are relatively arranged inside the upper layer of the gas separation block and are used for multiple gases to enter;

[0008] A plurality of mixing cavities are relatively arranged inside the upper layer of the gas separation block, and each mixing cavity is connected with all the air intake cavities;

[0009] A plurality of primary gas separation cavities are relatively arranged inside the lower layer of the gas separation block and are connected to the plurality of mixing cavities in a one-to-one correspondence;

[0010] A plurality of secondary air distribution channels are relatively arranged inside the lower layer of the air distribution block, and a primary air distribution channel is communicated with at least two secondary air distribution channels.

[0011] Furthermore, a plurality of air inlets are provided on the outer circumferential side of the air distribution block, and the plurality of air inlets respectively correspond to the middle positions of the plurality of air inlet cavities connected thereto.

[0012] Furthermore, the air intake channel and the mixing channel are both arc-shaped, and are radially distributed in a circumferential direction around the center of the air separation block, and the air intake channel is located radially outside the mixing channel.

[0013] Furthermore, the air intake cavity and the mixing cavity are each provided with two symmetrical ones, and the arc angle range of the air intake cavity and the mixing cavity is 70 to 110 degrees.

[0014] Furthermore, the plurality of mixing cavities and the plurality of primary gas-dividing cavities are symmetrically arranged, and the middle position of the mixing cavities is communicated with the middle position of the primary gas-dividing cavities.

[0015] Furthermore, the shapes of the primary air-dividing cavity and the secondary air-dividing cavity are both arc-shaped, and the secondary air-dividing cavity is located radially outside the primary air-dividing cavity.

[0016] Furthermore, both ends of each primary air-dividing cavity are respectively connected to the middle positions of two adjacent secondary air-dividing cavities, and both ends of each secondary air-dividing cavity are provided with air outlets.

[0017] Furthermore, a plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas separation block, and a sealing cover on each arc-shaped groove is provided with an arc-shaped sealing strip, thereby forming the corresponding air intake cavity, mixing cavity, first-level gas separation cavity and second-level gas separation cavity.

[0018] Furthermore, the air inlet channel, the mixing channel, the first-stage air separation channel and the second-stage air separation channel are sequentially connected through the opened channels.

[0019] An embodiment of the present invention further provides a semiconductor thin film device, comprising the dual-inlet channel gas mixing device as described above.

[0020] The beneficial effects of the embodiments of the present invention are as follows: one gas can enter one air inlet channel, and multiple gases can enter through multiple air inlet channels and reach all mixing channels for mixing. The mixed gas can enter the primary air separation channel for a first mixing, and then enter multiple secondary air separation channels from the primary air separation channel for a second mixing. Each mixing channel and air separation channel are independent. After a first mixing and a second mixing, the mixing uniformity of multiple gases can be improved, thereby improving the overall performance of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of the three-dimensional structure of a gas mixing device with dual air inlet channels provided in an embodiment of the present invention from an upper perspective (with an arc-shaped seal).

[0023] Figure 2 A schematic diagram of the three-dimensional structure of a gas mixing device with dual air inlet channels provided in an embodiment of the present invention from an upper perspective (without arc-shaped seals).

[0024] Figure 3 A schematic diagram of the three-dimensional structure of a gas mixing device with dual air inlet channels provided in an embodiment of the present invention from a lower perspective (with an arc-shaped seal).

[0025] Figure 4 A schematic diagram of the three-dimensional structure of a gas mixing device with dual air inlet channels provided in an embodiment of the present invention from a lower perspective (without arc-shaped seals).

[0026] Description of the symbols in the figure:

[0027] 1. Air distribution block; 11. First air inlet; 12. Second air inlet; 2. Air inlet cavity; 3. Mixing cavity; 4. First-level air distribution cavity; 5. Second-level air distribution cavity; 6. Arc seal. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0030] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0031] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0032] See also Figure 1 to Figure 4 , an embodiment of the present invention provides a dual-intake channel gas mixing device, comprising:

[0033] The gas distributor 1 is arranged in a disc shape;

[0034] A plurality of air inlet channels 2 are relatively arranged inside the upper layer of the air distribution block 1 and are used for the entry of a plurality of gases;

[0035] A plurality of mixing cavities 3 are relatively arranged inside the upper layer of the gas distribution block 1, and each mixing cavity 3 is connected with all the air inlet cavities 2;

[0036] A plurality of primary gas separation channels 4 are relatively arranged inside the lower layer of the gas separation block 1 and are connected to the plurality of mixing channels 3 in a one-to-one correspondence;

[0037] A plurality of secondary air distribution channels 5 are relatively arranged inside the lower layer of the air distribution block 1 , and the primary air distribution channel 4 is connected with at least two secondary air distribution channels 5 .

[0038] In this embodiment, the gas separation block 1 can be a disc-shaped structure with a certain thickness. The upper and lower layers of the gas separation block 1 refer to the top and bottom of the gas separation block 1. Multiple air inlet channels 2 and multiple mixing channels 3 are all opened inside the upper layer of the gas separation block 1. One gas can enter one air inlet channel 2, and multiple gases can enter multiple air inlet channels 2 respectively and reach all mixing channels 3 for mixing. After mixing in the mixing channel 3, multiple gases can enter the first-level gas separation channel 4 for a first mixing, and then enter multiple second-level gas separation channels 5 for a second mixing. Each mixing channel 3 and gas separation channel are independent. After mixing once and twice, the mixing uniformity of multiple gases can be improved, thereby improving the overall performance of the film.

[0039] In one embodiment, a plurality of air inlets are disposed on the outer circumference of the air distribution block 1 , and the plurality of air inlets correspond to the middle positions of the plurality of air inlet channels 2 .

[0040] In this embodiment, one air inlet corresponds to one air inlet channel 2, and the air inlet is used to connect to an external gas source to achieve gas delivery; Figure 1 and Figure 2 As shown, the mixing process of two gases is illustrated, and two air inlets are required to supply gas, such as the first air inlet 11 and the second air inlet 12. The air inlet is connected to the middle position of the air inlet channel 2, so that the gas can be divided to the two ends of the air inlet channel 2 after entering the air inlet channel 2, so as to be connected with all the mixing channels 3.

[0041] In one embodiment, the intake cavity 2 and the mixing cavity 3 are both arc-shaped, and are radially distributed in the circumferential direction around the center of the gas separator 1 , and the intake cavity 2 is located radially outside the mixing cavity 3 .

[0042] In this embodiment, the shapes of the air intake cavity 2 and the mixing cavity 3 are set to be arc-shaped, which can extend the path of the gas flow. The air intake cavity 2 is located radially outside the mixing cavity 3, so the path of the air intake cavity 2 can be designed to be relatively longer. For a variety of gases that can undergo chemical reactions at room temperature, the encounter of the various gases can be delayed as much as possible.

[0043] See also Figure 1 and Figure 2 In some preferred embodiments, the air intake cavity 2 and the mixing cavity 3 are each provided with two symmetrical ones, and the arc angle range of the air intake cavity 2 and the mixing cavity 3 is 70 to 110 degrees.

[0044] In this preferred embodiment, the arc angles of the air intake channel 2 and the mixing channel 3 can be preferably 90 degrees, and the two ends of one air intake channel 2 are connected to one end of the two mixing channels 3, and the two ends of the other air intake channel are connected to the other end of the two mixing channels 3, so that the two air intake channels 2 and the two mixing channels 3 can be enclosed to form an annular path.

[0045] In this preferred embodiment, for each mixing cavity 3, two gases can enter the two ends of the mixing cavity 3, and the two gases flow from the two ends to the middle of the mixing cavity 3 to form a counter-impact effect, so that the two gases can be better mixed.

[0046] In one embodiment, the plurality of mixing cavities 3 and the plurality of primary gas-dividing cavities 4 are symmetrically arranged, and the middle position of the mixing cavity 3 is connected to the middle position of the primary gas-dividing cavity 4 .

[0047] In this embodiment, the middle position of the mixing chamber 3 is connected to the middle position of the first-level gas separation chamber 4. After the offset mixing, the various gases enter the middle position of the first-level gas separation chamber 4 from the middle position of the mixing chamber 3. The various gases are diverted to the two ends of the first-level gas separation chamber 4 at the middle position of the first-level gas separation chamber 4. During the diversion process, the various gases can be mixed for the first time.

[0048] In this embodiment, based on the mutually symmetrical design of multiple mixing chambers 3 and multiple first-level gas separation chambers 4, multiple gases can first flow from the two ends of the mixing chamber 3 to the middle and enter the first-level gas separation chamber 4, and then flow from the middle to the two ends of the first-level gas separation chamber 4, so that the gas flow path is increased, thereby improving the effect of the first mixing.

[0049] In one embodiment, the first-stage gas-dividing cavity 4 and the second-stage gas-dividing cavity 5 are both arc-shaped, and the second-stage gas-dividing cavity 5 is located radially outside the first-stage gas-dividing cavity 4 .

[0050] In the present embodiment, the shapes of the primary gas separation channel 4 and the secondary gas separation channel 5 are set to be arc-shaped, which can extend the mixing path of multiple gases. Among them, the secondary gas separation channel 5 is located radially outside the primary gas separation channel 4, so the number of secondary gas separation channels 5 can be set to be larger. The gas in the primary gas separation channel 4 enters the secondary gas separation channel 5 with a larger number and then undergoes secondary mixing. This layered and step-by-step gas separation method can make the mixed gas more evenly transported to the reaction chamber.

[0051] See also Figure 3 and Figure 4 In some preferred embodiments, both ends of each primary air-dividing cavity 4 are respectively connected to the middle positions of two adjacent secondary air-dividing cavities 5, and both ends of each secondary air-dividing cavity 5 are provided with air outlets.

[0052] In this preferred embodiment, two symmetrical first-level gas-dividing channels 4 and four two-by-two symmetrical second-level gas-dividing channels 5 are provided. Based on the design that the two ends of each first-level gas-dividing channel 4 are respectively connected to the middle positions of the two adjacent second-level gas-dividing channels 5, a variety of gases can first flow from the middle of the first-level gas-dividing channel 4 to the two ends and enter the middle positions of the two second-level gas-dividing channels 5. The gas flows from the middle position of the second-level gas-dividing channel 5 to the two ends, and then is output from the air outlet holes at the two ends of the second-level gas-dividing channel 5, which can increase the gas flow path and thus enhance the secondary mixing effect.

[0053] In one embodiment, a plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas distribution block 1, and a sealing cover on each arc-shaped groove is provided with an arc-shaped sealing strip 6, thereby forming corresponding air intake cavities 2, mixing cavities 3, first-level gas distribution cavities 4 and second-level gas distribution cavities 5.

[0054] In this embodiment, the curvature and radial position of each arc-shaped groove can be designed according to the requirements of the air inlet cavity 2, the mixing cavity 3, the first-level air distribution cavity 4 and the second-level air distribution cavity 5. Each arc-shaped groove is encapsulated with an arc-shaped seal 6 of a matching shape to achieve sealing (it should be noted that air outlet holes need to be reserved at both ends of the arc-shaped seal 6 corresponding to the second-level air distribution cavity 5). The sealing method can be achieved by gluing.

[0055] In one embodiment, the air inlet channel 2, the mixing channel 3, the primary air distribution channel 4 and the secondary air distribution channel 5 are sequentially connected through the openings, which include but are not limited to round holes, square holes or through holes of other shapes.

[0056] An embodiment of the present invention further provides a semiconductor thin film device, comprising the above dual-inlet channel gas mixing device.

[0057] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A dual-intake channel gas mixing device, characterized in that: include: The gas distributor block is arranged in a disc shape; A plurality of air inlet channels are relatively arranged inside the upper layer of the gas separation block and are used for multiple gases to enter; A plurality of mixing cavities are relatively arranged inside the upper layer of the gas separation block, and each mixing cavity is connected with all the air intake cavities; A plurality of primary gas separation cavities are relatively arranged inside the lower layer of the gas separation block and are connected to the plurality of mixing cavities in a one-to-one correspondence; A plurality of secondary air distribution channels are relatively arranged inside the lower layer of the air distribution block, and a primary air distribution channel is communicated with at least two secondary air distribution channels.

2. The dual-intake channel gas mixing device according to claim 1, characterized in that: A plurality of air inlets are arranged on the outer circumference of the air distribution block, and the plurality of air inlets correspond to the middle positions of the plurality of air inlet cavities respectively.

3. The dual-intake channel gas mixing device according to claim 1, characterized in that: The air intake channel and the mixing channel are both arc-shaped, and are radially distributed in a circumferential direction around the center of the air separation block. The air intake channel is located radially outside the mixing channel.

4. The dual-intake channel gas mixing device according to claim 1, characterized in that: The air intake cavity and the mixing cavity are each provided with two symmetrical ones, and the arc angle range of the air intake cavity and the mixing cavity is 70 to 110 degrees.

5. The dual-intake channel gas mixing device according to claim 1, characterized in that: The plurality of mixing cavities and the plurality of primary gas-dividing cavities are symmetrically arranged, and the middle position of the mixing cavities is communicated with the middle position of the primary gas-dividing cavities.

6. The dual-intake channel gas mixing device according to claim 1, characterized in that: The first-level gas-dividing cavity and the second-level gas-dividing cavity are both in arc shape, and the second-level gas-dividing cavity is located radially outside the first-level gas-dividing cavity.

7. The dual-intake channel gas mixing device according to claim 6, characterized in that: The two ends of each primary air-dividing cavity are respectively connected with the middle positions of two adjacent secondary air-dividing cavities, and both ends of each secondary air-dividing cavity are provided with air outlets.

8. The dual-intake channel gas mixing device according to claim 1, characterized in that: A plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas separation block, and a sealing cover on each arc-shaped groove is provided with an arc-shaped sealing strip, thereby forming the corresponding air intake cavity, mixing cavity, primary gas separation cavity and secondary gas separation cavity.

9. The dual-intake channel gas mixing device according to claim 1, characterized in that: The air inlet channel, the mixing channel, the primary air distribution channel and the secondary air distribution channel are connected in sequence through the opened channels.

10. A semiconductor thin film device, characterized in that: It comprises a dual-intake channel gas mixing device as described in any one of claims 1 to 9.

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