Deposition apparatus, deposition method, and quartz glass

Abstract

The invention provides a deposition apparatus, a deposition method, and quartz glass. The deposition device comprises a furnace body, a deposition assembly, a supporting assembly, a main blow lamp and a plurality of sets of auxiliary blow lamps. The furnace body is provided with an air inlet channel and an air exhaust channel. The supporting assembly is provided with a defined rotating axis, and the supporting assembly can rotate around the rotating axis. The main blowtorch has a first jetting direction which is parallel to the direction of the rotating axis. The auxiliary blowtorch has a second jetting direction, and an included angle theta is formed between the second jetting direction and the first jetting direction and is larger than or equal to 10 degrees and smaller than or equal to 15 degrees. The deposition method comprises the following steps: preheating a furnace body to a first temperature; and opening an air inlet channel and an air exhaust channel of the furnace body. The supporting assembly is controlled to rotate. And when the temperature in the furnace body is increased to a second temperature, conveying raw material gas carrying the silicon-containing compound and the first mixed gas into the furnace body. And the supporting assembly is controlled to move towards the side away from the main blowtorch. The quartz glass is formed by processing a product deposited by the deposition method.

Description

Technical Field

[0001] The present application relates to the technical field of optical quartz glass manufacturing, and in particular to a deposition device, a deposition method and quartz glass. Background Art

[0002] At present, the manufacture of quartz glass usually adopts the single-lamp vertical chemical vapor deposition process technology, which uses high-purity silicon tetrachloride or synthetic silane and hydrogen and oxygen as raw materials, and is prepared by high-temperature gas phase reaction in the reaction chamber. Among them, the silicon dioxide particles generated by the reaction of the raw gas will precipitate on the deposition target surface, and the high temperature generated by the hydrogen and oxygen fuel can melt the silicon dioxide particles to form quartz glass. However, the maximum diameter of the quartz ingot that can be produced using this process is about 700mm, and the light transmittance uniformity of the quartz ingot structure is poor, which cannot meet the production needs of large-sized high light transmittance uniformity quartz glass. Summary of the invention

[0003] In order to solve the problem that it is impossible to produce large-diameter and highly uniform quartz glass, the embodiments of the present application provide a deposition device, a deposition method and quartz glass that can produce large-diameter and highly uniform quartz glass.

[0004] The embodiment of the present application provides a deposition device, including a furnace body, a deposition assembly, a support assembly, a main blowtorch and a plurality of auxiliary blowtorches. The furnace body has an air inlet channel and an exhaust channel. The deposition assembly is located in the furnace body, and the deposition assembly is used to accommodate the liquid to be deposited. The support assembly supports the deposition assembly, and the support assembly has a defined rotation axis, and the support assembly can rotate around the rotation axis. The main blowtorch is connected to the furnace body, and the main blowtorch has a first spray direction, and the first spray direction is parallel to the direction of the rotation axis. Along the radial direction of the main blowtorch, a plurality of groups of auxiliary blowtorches are sequentially arranged around the outer periphery of the main blowtorch at intervals, each group of the plurality of auxiliary blowtorches is provided with a plurality of auxiliary blowtorches, and a plurality of auxiliary blowtorches in the same group are arranged around the main blowtorch, and the auxiliary blowtorch has a second spray direction, and the second spray direction has an angle θ with the first spray direction, 10°≤θ≤15°.

[0005] It is understood that a plurality of auxiliary torches are provided in the deposition device and an angle is set between the auxiliary torches and the main torches, so that the silicon dioxide particles generated by the subsequent reaction can achieve higher optical uniformity and have a larger size after the treatment. The support assembly rotates to make the deposition assembly connected thereto rotate as well, so that the liquid to be deposited falls evenly into the deposition assembly and can be deposited better.

[0006] In one embodiment, the main blowtorch is provided with a first cavity, a second cavity, a third cavity, a first channel, a second channel and a third channel; the first cavity is for the circulation of a first gas, the second cavity is for the circulation of a second gas, the third cavity is for the circulation of a mixed gas of the first gas and the second gas, the first channel is for the circulation of a raw material gas carrying silicon-containing compounds, the second channel is for the circulation of the first gas, and the third channel is for the circulation of the first gas.

[0007] In one embodiment, the deposition assembly includes a deposition substrate and a baffle. The deposition substrate has a deposition target surface on its surface, and the liquid to be deposited is deposited on the deposition target surface.

[0008] The baffle is arranged around the deposition substrate, and the deposition substrate and the baffle form a deposition pool, and the liquid to be deposited is deposited in the deposition pool.

[0009] In one embodiment, the support assembly includes a support member, the support member supports the deposition substrate, and the support member can drive the deposition substrate to move along the direction of the rotation axis.

[0010] The present application also provides a deposition method, which uses the deposition device as described above to perform deposition, and includes the following steps: The furnace body is preheated to a first temperature.

[0011] The air inlet channel and the air exhaust channel of the furnace body are opened, and a circulating air flow field is constructed.

[0012] Control the support assembly to rotate.

[0013] When the temperature in the furnace body rises to the second temperature, the raw material gas carrying the silicon-containing compound and the first mixed gas are transported into the furnace body through the main torch and the auxiliary torch, and the silicon-containing compound reacts to generate silicon dioxide particles and is deposited in the deposition assembly.

[0014] The supporting assembly is controlled to move toward a side away from the main blowtorch.

[0015] It can be understood that the product made by this deposition method can have a larger size and obtain higher optical uniformity, which can meet the production requirements of meter-level quartz glass.

[0016] In one embodiment, when the furnace body is preheated to the first temperature, the first gas and the second gas are introduced into the main burner and burned, wherein the flow rate of the first gas is 100-500 L / min, and the flow rate of the second gas is 80-300 L / min.

[0017] The first gas and the second gas are introduced into the auxiliary blowtorch and burned, wherein the flow rate of the first gas is 40-160 L / min, and the flow rate of the second gas is 100-300 L / min.

[0018] The temperature inside the furnace body is raised to the first temperature within 20 to 30 hours, and the first temperature is 1000 to 1300° C.

[0019] In one embodiment, the second temperature is 1300~1400°C, and then the raw material is introduced into the main burner and the auxiliary burner at a flow rate of 40~80g / min, and the first mixed gas is introduced into the main burner and the auxiliary burner, wherein the flow rate ratio range of the second gas and the first gas is (1.6~1.95):1.

[0020] In one embodiment, the rotation speed of the support assembly is 12-20 r / min.

[0021] In one embodiment, the speed at which the support assembly moves toward a side away from the main burner is 2-5 mm / h.

[0022] The embodiment of the present application also provides a quartz glass, which is processed by using the product produced by deposition using the deposition method as described above.

[0023] It can be understood that the quartz glass formed by the above-mentioned deposition method into a quartz glass ingot and then processed can have a larger size and high optical uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A three-dimensional schematic diagram of a deposition device provided in one embodiment of the present application.

[0025] Figure 2 A schematic diagram of a main torch of a deposition device provided in one embodiment of the present application.

[0026] Figure 3 A schematic diagram of a deposition method according to another embodiment of the present application.

[0027] Description of main component symbols: 100. Deposition device; 1. Furnace body; 11. Air inlet channel; 12. Exhaust channel; 13. Upper furnace; 14. Lower furnace; 2. Deposition assembly; 20. Deposition substrate; 201. Deposition target surface; 21. Baffle; 3. Support assembly; 30. Support member; 4. Main blowtorch; 40. First cavity; 41. Second cavity; 42. Third cavity; 43. First channel; 44. Second channel; 45. Third channel; 5. Auxiliary blowtorch; 200. Liquid to be deposited; θ, angle; L, rotation axis; A1, first spray direction; A2, second spray direction; S, rotation direction.

[0028] The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0029] The following description will refer to the accompanying drawings to more fully describe the content of the present application. Shown in the accompanying drawings are exemplary embodiments of the present application. However, the present application can be implemented in many different forms and should not be interpreted as being limited to the exemplary embodiments set forth herein. These exemplary embodiments are provided to make the present application thorough and complete, and to fully convey the scope of the present application to those skilled in the art. Similar reference numerals represent identical or similar components. The terms used herein are only used for the purpose of describing specific exemplary embodiments and are not intended to limit the present application. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "an" and "the" are intended to also include plural forms. In addition, when used herein, "including" and / or "comprising" and / or "having", integers, steps, operations, components and / or components, but do not exclude the presence or addition of one or more other features, regions, integers, steps, operations, components and / or their groups. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those generally understood by ordinary technicians in the field to which the present application belongs. Furthermore, unless explicitly defined herein, terms such as those defined in general dictionaries should be interpreted as having meanings consistent with their meanings in the relevant art and the content of this application, and will not be interpreted as idealized or overly formal meanings.

[0030] The present application embodiment provides a deposition device 100, such as Figure 1As shown, it includes a furnace body 1, a deposition assembly 2, a support assembly 3, a main blowtorch 4 and multiple groups of auxiliary blowtorches 5. The furnace body 1 has an air inlet channel 11 and an exhaust channel 12. The deposition assembly 2 is located in the furnace body 1, and the deposition assembly 2 is used to accommodate the liquid to be deposited 200. The support assembly 3 supports the deposition assembly 2, and the support assembly 3 has a defined rotation axis L, and the support assembly 3 can rotate around the rotation axis L. The main blowtorch 4 is connected to the furnace body 1, and the main blowtorch 4 has a first spray direction A1, and the first spray direction A1 is parallel to the direction where the rotation axis L is located. Along the radial direction of the main blowtorch 4, multiple groups of auxiliary blowtorches 5 are sequentially and spaced around the outer periphery of the main blowtorch 4, and each group of auxiliary blowtorches 5 in the multiple groups of auxiliary blowtorches 5 is provided with multiple auxiliary blowtorches 5, and multiple auxiliary blowtorches 5 in the same group are arranged around the main blowtorch 4, and the auxiliary blowtorches 5 have a second spray direction A2, and the second spray direction A2 has an angle θ with the first spray direction A1, 10°≤θ≤15°.

[0031] It can be understood that the value of the angle θ can be 10°, 11°, 12°, 13°, 14°, or 15°.

[0032] In this embodiment, raw materials and mixed gas are introduced into the main burner 4 and the auxiliary burner 5, and the mixture is burned to generate a reaction, so as to generate a liquid to be deposited 200 and deposit it in the deposition assembly 2. The direction in which the support assembly 3 rotates around the rotation axis L is the rotation direction S. The furnace body 1 may include an upper furnace 13 and a lower furnace 14, the upper furnace 13 may be in an arc shape, the main burner 4 and the auxiliary burner 5 may be connected to the furnace top of the upper furnace 13, and the main burner 4 and the auxiliary burner 5 are arranged through the furnace top of the upper furnace 13, so that one end of the main burner 4 and the auxiliary burner 5 is located outside the upper furnace 13, and the other end thereof is located inside the upper furnace 13, so as to facilitate the gas from the outside of the upper furnace 13 to be transported to the upper furnace 13 through the main burner 4 and the auxiliary burner 5 for reaction. In this way, when the main burner 4 and the auxiliary burner 5 burn to generate a reaction, the temperature of the upper furnace 13 continues to rise. The deposition assembly 2 and the support assembly 3 are located in the lower furnace 14. The lower furnace 14 can be made of high-temperature resistant materials by splicing and masonry, and needs to be resistant to high temperatures above 1600°C.

[0033] The main burner 4 can be arranged in a direction parallel to the rotation axis L, so that the first spray direction A1 of the burner is also parallel to the direction of the rotation axis L and perpendicular to the plane where the deposition assembly 2 is located. The auxiliary burners 5 are arranged around the main burner 4, and the number of the auxiliary burners 5 can be increased or decreased according to the pre-production size of the quartz glass ingot. Starting from φ500mm, the number of the auxiliary burners 5 increases by 3-6 for every 500mm increase in the diameter of the quartz glass ingot.

[0034] It is understood that a plurality of auxiliary torches 5 are provided in the deposition device 100 and an angle θ is set between the auxiliary torches 5 and the main torch 4, so that the silicon dioxide particles generated by the subsequent reaction can achieve a higher optical uniformity and a larger size after being processed. The support assembly 3 rotates so that the deposition assembly 2 connected thereto also rotates, so that the liquid to be deposited 200 falls evenly into the deposition assembly 2 and can be deposited better.

[0035] In one embodiment, if Figure 2 As shown, the main blowtorch 4 is provided with a first cavity 40, a second cavity 41, a third cavity 42, a first channel 43, a second channel 44 and a third channel 45. The first cavity 40 is for the first gas to flow, the second cavity 41 is for the second gas to flow, the third cavity 42 is for the mixed gas of the first gas and the second gas to flow, the first channel 43 is for the raw material gas carrying the silicon-containing compound to flow, the second channel 44 is for the first gas to flow, and the third channel 45 is for the first gas to flow.

[0036] In this embodiment, the auxiliary burner 5 can have the same structure as the main burner 4. The raw material can be selected from silicon-containing siloxane or alcohol salt or tetrachloride, or octamethylcyclotetrasiloxane or silicon tetrachloride, and the raw material gas carrying the silicon-containing compound can be an inert gas, and the inert gas can be selected from nitrogen, which can carry the raw material and does not affect the reaction. The first gas can be selected from oxygen, and the second gas can be selected from hydrogen. The mixed gas is ejected from the burner mouth to burn and generate heat energy and react to generate water.

[0037] It is understandable that the setting of the blowtorch allows hydrogen and oxygen to be delivered separately, which can ensure that hydrogen and oxygen burn stably at the blowtorch mouth, the flame state is stable, and hydrogen and oxygen fully react with the silicon-containing raw material to generate a better product.

[0038] In one embodiment, if Figure 1 As shown, the deposition assembly 2 includes a deposition substrate 20 and a baffle 21 . The surface of the deposition substrate 20 has a deposition target surface 201 , and the liquid to be deposited 200 is deposited on the deposition target surface 201 .

[0039] The baffle 21 is disposed around the deposition substrate 20 , and the deposition substrate 20 and the baffle 21 form a deposition pool, and the deposition liquid 200 is deposited in the deposition pool.

[0040] In this embodiment, the deposition target surface 201 can be made of a quartz glass plate or a quartz glass block, and the baffle 21 can be made of high-strength refractory materials such as alumina or zirconia, which can remain stable under the thermal shock of the deposition liquid 200. The deposition substrate 20 can be set to a circular or elliptical shape, and the baffle 21 is connected to the deposition substrate 20 along the rotation direction S, one end of which is connected to the deposition substrate 20, and the other end is close to the furnace top of the furnace body 1, so that the deposition liquid is contained in the deposition pool.

[0041] It is understandable that the baffle 21 is provided so that the liquid to be deposited 200 does not overflow during deposition, and can limit the flow of the liquid to be deposited 200, thereby saving raw materials and ensuring good deposition.

[0042] In one embodiment, the support assembly 3 includes a support member 30 , and the support member 30 supports the deposition substrate 20 . The support member 30 can drive the deposition substrate 20 to move along the direction where the rotation axis L is located.

[0043] In this embodiment, the support member 30 may be cylindrical, and a driving member may be provided to drive the support member 30 to rotate and move. The deposition substrate 20 may be located only on the top of the support member 30 and supported by the support member 30, or may be connected to the support member 30. When deposition starts, the support member 30 may drive the deposition assembly 2 to move along the direction of the rotation axis L away from the main torch 4 while rotating.

[0044] It can be understood that the rotatable support member 30 drives the deposition assembly 2 to rotate so that the deposition is more uniform. At the same time, as the deposited liquid 200 is deposited, the support member 30 drives the deposition assembly 2 to move toward the side away from the main blowtorch 4 to keep the position of the liquid surface of the deposited liquid 200 stable, thereby achieving a better deposition effect.

[0045] The present application also provides a deposition method, using the above deposition device 100 to perform deposition, such as Figure 3 As shown, it includes the following steps: S1: preheating the furnace body 1 to a first temperature.

[0046] S2: Open the air inlet channel 11 and the air exhaust channel 12 of the furnace body 1, and build a circulating airflow field.

[0047] S3: Control the support assembly 3 to rotate.

[0048] S4: When the temperature in the furnace body 1 rises to the second temperature, the raw material gas carrying the silicon-containing compound and the first mixed gas are transported into the furnace body 1 through the main burner 4 and the auxiliary burner 5, and the silicon-containing compound reacts to generate silicon dioxide particles and is deposited in the deposition assembly 2.

[0049] S5: Control the support assembly 3 to move to a side away from the main blowtorch 4.

[0050] In this embodiment, the main burner 4 is first installed and fixed on the furnace roof of the furnace body 1, and the burner is placed in the center of the furnace roof, perpendicular to the deposition substrate 20, and multiple auxiliary burners 5 surrounding the circumference are installed one by one according to the needs, ensuring that an angle θ is formed between the auxiliary burners 5 and the main burner 4, and the angle θ is 10°~15°, and the first mixed gas is introduced into each burner to continuously increase the combustion temperature of the upper furnace 13 until the first temperature is reached. Among them, the first mixed gas is a mixed gas of hydrogen and oxygen. At the same time, the deposition substrate 20 is installed and placed on the top of the support assembly 3, and the position of the support assembly 3 is raised until the deposition substrate 20 is in the designated position for deposition production. After the support assembly 3 reaches the designated position, the rotation function is turned on to rotate the support assembly 3.

[0051] At this time, the exhaust channel 12 and the air inlet channel 11 start to work. The gas in the furnace includes water vapor, air, and unburned hydrogen and oxygen. These gases are continuously extracted through the exhaust channel 12 and take out some heat. The air in the external environment is continuously drawn into the furnace through the air inlet channel 11 of the lower furnace 14, thus forming a stable circulating airflow field.

[0052] Then, the first mixed gas and the inert gas carrying the raw material are introduced, and the raw material gas is hydrolyzed to generate silicon dioxide powder, which falls on the deposition target surface 201 of the deposition substrate 20, and the support assembly 3 moves to the side away from the main blowtorch 4, that is, the support assembly 3 begins to descend. At the same time, under the high temperature environment of the reaction center, the temperature on the deposition substrate 20 reaches above 1800°C, and the temperature of the furnace wall of the furnace body 1 is measured at 1500-1550°C. The silicon dioxide powder is transformed into a glass state under high temperature, that is, the liquid to be deposited 200 is a glass liquid, which flows and accumulates in the deposition pool, slowly and evenly spreads to the surroundings, and the size gradually increases until the glass liquid spreads to the edge of the deposition pool. The glass liquid is blocked by the baffle 21 and gradually stacks in a direction parallel to the direction of the rotation axis L. After the deposition is completed, it is cooled and shaped to form a quartz glass ingot, and the deposition pool is peeled off, so that a meter-level large-size quartz glass product with a maximum size of φ1500×300mm and high optical uniformity can be obtained. Any quartz glass with a diameter of φ800mm can be measured to have an optical uniformity of ≤2.0×10 -6 .

[0053] It can be understood that when the temperature on the deposition substrate 20 reaches above 1800°C, the measured temperature of the furnace wall of the furnace body 1 can be 1500°C, 1510°C, 1520°C, 1530°C, 1540°C, or 1550°C.

[0054] It can be understood that the product made by this deposition method can have a larger size and obtain higher optical uniformity, which can meet the production requirements of meter-level quartz glass.

[0055] In one embodiment, when the furnace body 1 is preheated to the first temperature, the first gas and the second gas are introduced into the main burner 4 and burned, wherein the flow rate of the first gas is 100-500 L / min, and the flow rate of the second gas is 80-300 L / min.

[0056] It can be understood that at this time, the first gas flow rate can be 100L / min, 200L / min, 300L / min, 400L / min, 500L / min, and the second gas flow rate can be 80L / min, 90L / min, 100L / min, 200L / min, 300L / min.

[0057] The first gas and the second gas are introduced into the auxiliary blowtorch 5 and burned, wherein the flow rate of the first gas is 40-160 L / min, and the flow rate of the second gas is 100-300 L / min.

[0058] It is understood that the first gas flow rate may be 40 L / min, 60 L / min, 80 L / min, 100 L / min, 120 L / min, 140 L / min, 150 L / min. The second gas flow rate may be 100 L / min, 200 L / min, 300 L / min.

[0059] The temperature inside the furnace body 1 is raised to a first temperature within a range of 20 to 30 hours, wherein the first temperature is 1000 to 1300° C.

[0060] It is understood that the time for raising the temperature in the furnace to the first temperature may be 20 hours, 21 hours, 22 hours, 23 hours, 24 hours, 25 hours, 26 hours, 27 hours, 28 hours, 29 hours, 30 hours. The first temperature may be 1000°C, 1500°C, 2000°C, 2500°C, 3000°C.

[0061] In this embodiment, oxygen can be selected as the first gas and hydrogen can be selected as the second gas. In this way, the finished product is well formed and has a larger size.

[0062] In one embodiment, the second temperature is 1300~1400℃, and then the raw materials are introduced into the main burner 4 and the auxiliary burner 5 at a flow rate of 40~80g / min, and the first mixed gas is introduced into the main burner 4 and the auxiliary burner 5, wherein the flow rate ratio range of the second gas and the first gas is (1.6~1.95):1.

[0063] It is understood that the second temperature may be 1300° C., 1320° C., 1340° C., 1360° C., 1380° C., 1400° C. The flow rate ratio of the second gas to the first gas ranges from 1.6:1, 1.7:1, 1.8:1, 1.9:1, 1.95:1.

[0064] In the present embodiment, the first mixed gas is a mixed gas of a first gas and a second gas, the first gas is oxygen, and the second gas is hydrogen, and the flow rates of oxygen and hydrogen are the same as those during preheating. The flow rates of oxygen introduced into multiple channels or cavities are all consistent, and similarly, the flow rates of hydrogen introduced into multiple channels or cavities are also consistent, and at this time, the flow rate ratio of hydrogen to oxygen is in the range of (1.6~1.95):1, and the flow rate ratio of hydrogen to oxygen in the first mixed gas is also the same as the flow rate ratio in the channels or cavities through which hydrogen and oxygen are introduced separately.

[0065] At this time, the second temperature is the temperature measured on the furnace wall. Nitrogen can be used as a carrier gas for the raw material.

[0066] In this way, the raw material and the first mixed gas react well to form a better product.

[0067] In one embodiment, the rotation speed of the support assembly 3 is 12-20 r / min.

[0068] It can be understood that the rotation speed of the support assembly 3 is coordinated with the deposition of the liquid to be deposited 200, so that the liquid to be deposited 200 is evenly deposited in the deposition assembly 2 to obtain a better product.

[0069] In one embodiment, the speed at which the support assembly 3 moves toward the side away from the main torch 4 is 2-5 mm / h.

[0070] It can be understood that the speed at which the support assembly 3 moves in a direction parallel to the rotation axis L toward the side away from the main torch 4 matches the deposition of the liquid 200 to be deposited, so that the liquid 200 to be deposited is evenly stacked to obtain a better product.

[0071] The embodiment of the present application also provides a quartz glass, which is processed by the product produced by deposition using the above deposition method.

[0072] In this embodiment, the quartz glass ingot deposited by the above deposition method can be processed to produce a meter-level large-size quartz glass product with a maximum size of φ1500×300mm and high optical uniformity. Any quartz glass with a diameter of φ800mm can be measured to have an optical uniformity of ≤2.0×10 -6 .

[0073] It can be understood that the quartz glass formed by the above-mentioned deposition method into a quartz glass ingot and then processed can have a larger size and high optical uniformity.

[0074] Several possible embodiments are provided below: Embodiment 1: The main torch 4 is installed at the center of the furnace top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Five auxiliary torches are installed and fixed downward at an angle θ of 10° to carry out ignition deposition production. After silicon tetrachloride is introduced, the hydrogen flow rate is 400L / min, the oxygen flow rate is 210L / min, and the silicon tetrachloride is 60g / min. The hydrogen flow rate is 300L / min, the oxygen flow rate is 160L / min, and the silicon tetrachloride is 45g / min. The measured temperature of the furnace wall of the furnace body 1 is stable at 1520~1525℃. Along with the deposition growth, the quartz glass ingot with a size of φ1000×260mm and an optical uniformity of 1.9×10 -6 .

[0075] Embodiment 2: The main torch 4 is installed at the center of the furnace top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Five auxiliary torches 5 are extended downward at an angle θ of 10° and installed and fixed. Then, a circle is extended to the side away from the main torch 4 and six auxiliary torches 5 are arranged to extend downward at an angle θ of 15° and installed and fixed for ignition deposition production. After silicon tetrachloride is introduced, the main torch 4 is introduced with a hydrogen flow rate of 400L / min, an oxygen flow rate of 210L / min, and silicon tetrachloride of 60g / min. The auxiliary torches 5 are introduced with a hydrogen flow rate of 300L / min, an oxygen flow rate of 160L / min, and silicon tetrachloride of 45g / min. The measured temperature of the furnace wall of the furnace body 1 is stable at 1520~1525℃. Along with the deposition growth, a quartz glass ingot with a size of φ1200×230mm and an optical uniformity of 2.0×10 -6 .

[0076] Embodiment 3: The main torch 4 is installed at the center of the top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Five auxiliary torches are extended downward at an angle θ of 10° and fixed. Then, six auxiliary torches are arranged in a circle on the side away from the main torch 4 and extended downward at an angle θ of 15° and fixed. After silicon tetrachloride is introduced, hydrogen is introduced into the main torch 4 at a flow rate of 400L / min, oxygen at a flow rate of 210L / min, and silicon tetrachloride is 70g / min. The hydrogen flow rate of each auxiliary torch 5 is 300L / min, oxygen at a flow rate of 160L / min, and silicon tetrachloride is 50g / min. The measured temperature of the furnace wall of the furnace body 1 is stable at 1520~1525℃. With the growth of deposition, a quartz glass ingot with a size of φ1350×200mm and an optical uniformity of 2.3×10 -6 .

[0077] Embodiment 4: The main torch 4 is installed at the center of the furnace top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Five auxiliary torches 5 are installed and fixed downward at an angle θ of 10° to carry out ignition deposition production. After silicon tetrachloride is introduced, the hydrogen flow rate is 500L / min, the oxygen flow rate is 260L / min, and the silicon tetrachloride is 60g / min. The hydrogen flow rate of each auxiliary torch 5 is 300L / min, the oxygen flow rate is 160L / min, and the silicon tetrachloride is 45g / min. The measured temperature of the furnace wall of the furnace body 1 is stable at 1520~1525℃. Along with the deposition growth, the quartz glass ingot with a size of φ1280×240mm and an optical uniformity of 1.5×10 -6 .

[0078] Embodiment 5: The main torch 4 is installed at the center of the furnace top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Five auxiliary torches 5 are installed and fixed downward at an angle θ of 10° to carry out ignition deposition production. After silicon tetrachloride is introduced, the hydrogen flow rate is 400L / min, the oxygen flow rate is 210L / min, and the silicon tetrachloride is 60g / min. The hydrogen flow rate of each auxiliary torch 5 is 200L / min, the oxygen flow rate is 110L / min, and the silicon tetrachloride is 45g / min. The measured temperature of the furnace wall of the furnace body 1 is stable at 1520~1525℃. Along with the deposition growth, the quartz glass ingot with a size of φ1180×230mm and an optical uniformity of 1.8×10 -6 .

[0079] Embodiment 6: The main torch 4 is installed at the center of the furnace top of the furnace body 1, perpendicular to the plane where the deposition substrate 20 is located. Three auxiliary torches 5 are extended downward at an angle θ of 10° and fixed. Then, four auxiliary torches 5 are arranged in a circle on the side away from the main torch 4 and extended downward at an angle θ of 12° and fixed for ignition deposition production. After silicon tetrachloride is introduced, the hydrogen flow rate is 400L / min, the oxygen flow rate is 210L / min, and the silicon tetrachloride is 60g / min. The hydrogen flow rate of each auxiliary torch 5 is 300L / min, the oxygen flow rate is 160L / min, and the silicon tetrachloride is 45g / min. The measured temperature of the furnace wall is stable at 1520~1525℃. Along with the deposition growth, the quartz glass ingot with a size of φ1150×200mm can be stably obtained. After milling, grinding and polishing, the optical uniformity of the quartz glass with a diameter of φ800mm is tested to be 0.8×10 -6 .

[0080] The above is a feasible embodiment of the present invention, and the following is a comparative example: Comparative Example 1: The main blowtorch 4 is installed at the center of the top of the furnace body 1, perpendicular to the plane of the deposition substrate 20. The five circumferential auxiliary blowtorches 5 are also installed and fixed to extend downward perpendicular to the deposition substrate 20 to carry out ignition deposition production. After silicon tetrachloride is introduced, the hydrogen flow rate is 400L / min, the oxygen flow rate is 210L / min, and the silicon tetrachloride is 60g / min. The hydrogen flow rate of each auxiliary blowtorch 5 is 300L / min, the oxygen flow rate is 160L / min, and the silicon tetrachloride is 45g / min. The measured temperature of the furnace wall can only be maintained at 1430~1435℃, which is far lower than the normal deposition temperature. The quartz glass ingot cannot be completely spread out and flat, there are a large number of crystallizations on the edge, there are obvious bubbles inside, and the yield is extremely low.

[0081] Comparative Example 2: The main blowtorch 4 is installed at the center of the top of the furnace body 1, perpendicular to the plane of the deposition substrate 20. Five circumferential auxiliary blowtorches 5 are installed and fixed to extend downward perpendicular to the deposition substrate 20 to carry out ignition deposition production. After silicon tetrachloride is introduced, hydrogen is introduced into the main blowtorch 4 at a flow rate of 600L / min, oxygen at a flow rate of 310L / min, and silicon tetrachloride is 60g / min. The hydrogen flow rate of each auxiliary blowtorch 5 is 400L / min, oxygen at a flow rate of 210L / min, and silicon tetrachloride is 45g / min. The blowtorch mouth is affected by thermal reflection, and a large amount of silica powder is accumulated at the blowtorch mouth and vitrified, forming impurities that fall into the deposition pool, forming a large number of bubble defects in the glass ingot, and it is impossible to produce complete meter-grade quartz good products.

[0082] Comparative Example 3: A single blowtorch was installed at the center of the top of the furnace body 1, perpendicular to the plane of the deposition substrate 20. The hydrogen flow rate was 800 L / min, the oxygen flow rate was 460 L / min, and the silicon tetrachloride was 80 g / min. The maximum temperature of the furnace wall was measured to be 1360°C. Obvious stratification appeared in the quartz glass, and crystallization at the edge was serious. The furnace temperature was low, making it difficult to completely melt the silicon dioxide particles. A large number of defects such as nodules and bubbles appeared, and effective deposition and molding could not be achieved.

[0083] In the above, the specific implementation of the present application is described with reference to the accompanying drawings. However, those skilled in the art will appreciate that various changes and substitutions may be made to the specific implementation of the present application without departing from the spirit and scope of the present application. These changes and substitutions are all within the scope defined by the present application.

Claims

1. A deposition device, characterized in that: The deposition device comprises: A furnace body, wherein the furnace body has an air inlet channel and an air exhaust channel; A deposition assembly, the deposition assembly is located in the furnace body, and the deposition assembly is used to accommodate a liquid to be deposited; A support assembly, the support assembly supports the deposition assembly, the support assembly has a defined rotation axis, and the support assembly is rotatable about the rotation axis; A main blowtorch, the main blowtorch is connected to the furnace body, the main blowtorch has a first spraying direction, and the first spraying direction is parallel to the direction of the rotation axis; A plurality of groups of auxiliary blowtorches are arranged radially along the main blowtorch at intervals in sequence around the outer circumference of the main blowtorch, each group of the plurality of auxiliary blowtorches is provided with a plurality of auxiliary blowtorches, and the plurality of auxiliary blowtorches in the same group are arranged around the main blowtorch, and the auxiliary blowtorches have a second spraying direction, and an angle θ is formed between the second spraying direction and the first spraying direction, and the angle is 10°≤θ≤15°.

2. The deposition device according to claim 1, characterized in that: The main blowtorch is provided with a first cavity, a second cavity, a third cavity, a first channel, a second channel and a third channel; the first cavity is used for the circulation of a first gas, the second cavity is used for the circulation of a second gas, the third cavity is used for the circulation of a mixed gas of the first gas and the second gas, the first channel is used for the circulation of a raw material gas carrying silicon-containing compounds, the second channel is used for the circulation of the first gas, and the third channel is used for the circulation of the first gas.

3. The deposition device according to claim 1, characterized in that: The deposition assembly comprises a deposition substrate and a baffle, the deposition substrate has a deposition target surface on its surface, and the liquid to be deposited is deposited on the deposition target surface; The baffle is arranged around the deposition substrate, and the deposition substrate and the baffle form a deposition pool, and the liquid to be deposited is deposited in the deposition pool.

4. The deposition device according to claim 3, characterized in that: The support assembly includes a support member, the support member supports the deposition substrate, and the support member can drive the deposition substrate to move along the direction where the rotation axis is located.

5. A deposition method, using the deposition device as claimed in any one of claims 1 to 4 for deposition, characterized in that: The deposition method comprises the following steps: preheating the furnace to a first temperature; Opening the air inlet channel and the air exhaust channel of the furnace body and constructing a circulating air flow field; Controlling the support assembly to rotate; When the temperature in the furnace body rises to a second temperature, the raw material gas carrying the silicon-containing compound and the first mixed gas are transported into the furnace body through the main torch and the auxiliary torch, and the silicon-containing compound reacts to generate silicon dioxide particles and is deposited in the deposition assembly; The supporting assembly is controlled to move toward a side away from the main blowtorch.

6. The deposition method according to claim 5, characterized in that When the furnace body is preheated to a first temperature, a first gas and a second gas are introduced into the main burner and the two gases are burned, wherein the flow rate of the first gas is 100-500 L / min, and the flow rate of the second gas is 80-300 L / min; and introducing the first gas and the second gas into the auxiliary burner and causing the two gases to burn, wherein the flow rate of the first gas is 40-160 L / min, and the flow rate of the second gas is 100-300 L / min; The temperature inside the furnace body is raised to the first temperature within 20 to 30 hours, and the first temperature is 1000 to 1300° C.

7. The deposition method according to claim 6, characterized in that: The second temperature is 1300~1400℃, and then the raw material is introduced into the main burner and the auxiliary burner at a flow rate of 40~80g / min, and the first mixed gas is introduced into the main burner and the auxiliary burner, wherein the flow rate ratio range of the second gas and the first gas is (1.6~1.95):

1.

8. The deposition method according to claim 5, characterized in that: The rotation speed of the support assembly is 12-20 r / min.

9. The deposition method according to claim 5, characterized in that: The speed at which the support assembly moves toward the side away from the main blowtorch is 2-5 mm / h.

10. A quartz glass, characterized in that: The product is processed by the deposition method as claimed in claim 5.

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