Electro-optical modulation chip and control chip co-packaging device with coupled optical end faces

Abstract

The invention discloses an optical end face coupled electro-optical modulation chip and control chip co-packaging device which comprises an input optical fiber, an electro-optical modulation chip, an output optical fiber, a monitoring photoelectric detector, a base, a control chip, a tube shell, a radio frequency load, a bottom plate and a cover plate. A base is welded to the upper surface of the bottom plate, a top cavity and a bottom cavity are sequentially formed in the base from top to bottom in the vertical direction, a tube shell is welded to the upper surface of the bottom plate, a cavity capable of containing the base is formed in the tube shell, a cover plate is welded to the top of the tube shell, the bottom cavity is used for assembling a control chip, and an electro-optical modulation chip is bonded in the top cavity. A monitoring photoelectric detector is bonded to the top of the electro-optical modulation chip, and an input optical fiber and an output optical fiber are welded to one side of the tube shell. According to the optical end face coupled electro-optical modulation chip and control chip co-packaging device, the height of the whole device in the vertical direction is reduced, the bottom plate metal through holes below the control chip form a heat dissipation channel, heat dissipation can be conducted on the control chip, and the heat dissipation capacity of the control chip is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic hybrid integrated packaging, and in particular to a co-sealing device of an electro-optical modulation chip and a control chip coupled with an optical end face. Background Art

[0002] As electronic information systems develop towards high integration, high frequency and broadband, microwave photonics technology plays an increasingly important role in them due to its high frequency and broadband performance. Electro-optical modulators are devices that realize electro-optical conversion and are an important link between microwaves and light waves. Therefore, it is particularly important to propose a highly integrated electro-optical modulator that is compatible with the interface of highly integrated microwave circuits. At present, in order to avoid the size limitation of RF connectors, highly integrated microwave circuits often adopt the form of integrated packaging by mounting microwave components on printed circuit boards, thereby further improving the integration of microwave systems.

[0003] However, the current electro-optic modulator is large in size and is not easy to be co-packaged with microwave devices. There are two main reasons: on the one hand, the bias operating point of the electro-optic modulator will drift slowly with changes in environmental factors such as temperature, so an external control loop is required for closed-loop control. The control loop includes discrete devices such as optical beam splitters, monitoring photodetectors, and control circuits. These discrete devices have their own independent packages, resulting in a large volume of the entire control loop; on the other hand, the RF interface of the electro-optic modulator is an SMA, SMP, SSMP interface, etc. These interfaces are large in size. When connected to printed circuit boards, corresponding RF connectors are required for conversion, which will result in a large size of the entire microwave system. In addition, the height of commonly used integrated microwave devices is about 1 cm. If the electro-optic modulator and the microwave device are co-packaged in a vertically adapted design, the optical device needs to reduce the height of the entire optoelectronic module. Co-packaging the electro-optic modulation chip and the bias control chip is an effective means to reduce the size of the electro-optic modulator, but direct co-packaging also has the problem of heat dissipation of the control chip. Therefore, it is particularly important to propose a co-sealed device for an electro-optical modulation chip and a control chip that can be directly soldered to a printed circuit board, has a heat dissipation channel, and is highly compatible with microwave devices. Summary of the invention

[0004] In order to solve the technical problems existing in the background technology, the present invention proposes a co-sealed device of an electro-optic modulation chip and a control chip coupled with optical end faces.

[0005] The optical end face coupled electro-optical modulation chip and control chip co-sealed device proposed in the present invention comprises an input optical fiber, an electro-optical modulation chip, an output optical fiber, a monitoring photodetector, a base, a control chip, a tube shell, a radio frequency load, a bottom plate, and a cover plate; a base is welded on the upper surface of the bottom plate, a top cavity and a bottom cavity are sequentially arranged on the base from top to bottom in the vertical direction, a tube shell is welded on the upper surface of the bottom plate, and a cavity for accommodating the base is arranged on the tube shell, a cover plate is welded on the top of the tube shell, the bottom cavity is used to assemble the control chip, an electro-optical modulation chip is bonded in the top cavity, a monitoring photodetector is bonded on the top of the electro-optical modulation chip, and the tube shell is welded on the upper surface of the bottom plate. An input optical fiber and an output optical fiber are welded on one side, and the input optical fiber and the output optical fiber extend to the cavity of the tube shell, the center of the input optical fiber coincides with the center of the input optical coupling port of the electro-optic modulation chip, the input light of the input optical fiber is incident on the input optical coupling port through end face coupling, the center of the output optical coupling port of the electro-optic modulation chip coincides with the center of the output optical fiber, the output light of the output optical coupling port is incident on the output optical fiber through end face coupling, the electro-optic modulation chip is electrically connected to the control chip, and the monitoring photodetector is electrically connected to the control chip to realize the bias control closed loop of the electro-optic modulation chip.

[0006] Preferably, the interface of the electro-optic modulation chip includes an input optical coupling port, an output optical coupling port, a monitoring optical coupling port, a radio frequency input electrode and a bias input electrode; the input optical coupling port and the output optical coupling port are end-face coupling structures, which are used for optical coupling between the electro-optic modulation chip and the input light and the output light; the monitoring optical coupling port is an array waveguide grating or an on-chip optical reflection structure, which is used for vertical coupling of light between monitoring lights; the radio frequency input electrode is a radio frequency signal loading port, and the bias input electrode is a bias voltage loading port.

[0007] Preferably, the base plate includes a base plate medium, a welding strip, a base plate surface wiring, a base plate metal via, and a bottom solder ball. The base plate surface wiring is arranged on the upper surface of the base plate medium, and a plurality of groups of base plate metal vias are arranged in an array on the base plate medium, and the plurality of groups of base plate metal vias are distributed in a vertical direction, and the bottom ends of the plurality of groups of base plate metal vias are welded with bottom solder balls one by one.

[0008] Preferably, the base includes a base body, a top cavity, a bottom cavity, base surface wiring and base metal vias, the upper surface of the base is located on both sides of the top cavity and multiple groups of base surface wirings are arranged, the interior of the base is located on both sides of the top cavity and multiple groups of base metal vias are arranged, and the multiple groups of base metal vias correspond one-to-one to the multiple groups of base surface wirings, and the top of the base metal vias is electrically connected to the base surface wiring.

[0009] Preferably, the interface of the control chip includes a monitoring input port, a bias output port, a download input port, and a status output port. All interfaces of the control chip are connected to the base plate by wire bonding. The monitoring input port is connected to the monitoring output port of the monitoring photodetector by wire bonding through the base plate surface wiring, the base metal via and the base surface wiring; the bias output port is connected to the bias input electrode of the electro-optical modulation chip by wire bonding through the base plate surface wiring, the base metal via and the base surface wiring; the download input port is electrically connected to the bottom solder ball by the base plate surface wiring and the base metal via, and the control program update and download signals are input through the bottom solder ball; the status output port is electrically connected to the bottom solder ball by the base plate surface wiring and the base metal via, and the status signal of the control chip is output through the bottom solder ball.

[0010] Preferably, the RF input electrode and bias input electrode of the electro-optical modulation chip are wire-bonded to the base, and the RF input electrode is divided into two ends. One end of the RF input electrode is connected to an external RF signal, which is fed in through a group of bottom solder balls on the base plate, and is fed into the RF input electrode through wire bonding in sequence through the base plate metal vias, the base metal vias and the base surface wiring, and the other end of the RF input electrode is connected to the RF load through wire bonding; the bias input electrode is wire-bonded to the bias output port of the control chip through the base surface wiring, the base metal vias and the base surface wiring in sequence, and the upper surface of the electro-optical modulation chip is flush with the upper surface of the top cavity.

[0011] Preferably, the monitoring photodetector interface includes a monitoring optical port and a monitoring output port, the monitoring optical port is located on the lower surface of the monitoring photodetector, and the monitoring output port is located on the upper surface of the monitoring photodetector; the monitoring photodetector is bonded to the upper surface of the electro-optical modulation chip, and the monitoring optical port coincides with the monitoring optical coupling port of the electro-optical modulation chip; the monitoring output port is wire-bonded to the base, and the monitoring output port is wire-bonded to the monitoring input port of the control chip in sequence through the base surface wiring, the base metal vias and the bottom plate surface wiring.

[0012] Preferably, the surface wiring of the base plate is used for welding and installation of the base and the control chip as well as signal transmission; the metal vias of the base plate are used for signal transmission between the base and the control chip on the one hand, and on the other hand, the metal vias of the base plate located below the control chip form a heat dissipation channel to dissipate the heat of the control chip.

[0013] Preferably, the top of the tube shell is welded to the cover plate, the bottom of the tube shell is welded to the bottom plate, and the input optical fiber and the output optical fiber are welded to one side of the tube shell to form a closed cavity.

[0014] In the present invention, the proposed optical end face coupled electro-optical modulation chip and control chip co-sealed device, by co-sealing the electro-optical modulation chip, monitoring photodetector and control chip, the surface mounted monitoring photodetector on the electro-optical modulation chip for optical path transmission, the electro-optical modulation chip, monitoring photodetector and control chip are connected by wire bonding with metal vias in the base to achieve circuit connection, and the bias control closed loop of the entire electro-optical modulation chip is completed. The base seals the electro-optical modulation chip and the control chip in the base through a vertical multi-cavity design, and the size of the entire device is small. The bottom plate metal vias under the control chip form a heat dissipation channel, which can dissipate heat for the control chip and improve the heat dissipation capacity of the control chip. On the one hand, the electro-optical modulation chip adopts an end face coupling scheme to couple light with the input optical fiber and the output optical fiber, which can reduce the vertical height of the entire device, and is highly compatible with the microwave circuit packaging device, and is easy to be co-packaged with the microwave packaging device. On the other hand, a surface mounted monitoring photodetector scheme is adopted for monitoring light coupling, and the surface mounted coupling light path is the shortest, which can reduce the complexity of coupling assembly, and the size of the entire device is small. The bottom solder ball of the bottom plate is welded to the external printed circuit board to transmit the radio frequency signal of the electro-optical modulation chip, the download signal of the control chip, the status signal of the control chip, etc., avoiding the transfer of the radio frequency connector, which can reduce the size of the entire device and have the ability to be welded and integrated with the microwave circuit. The base has a top cavity at the top, and the electro-optical modulation chip is mounted in the top cavity. The upper surface of the electro-optical modulation chip is flush with the upper surface of the top cavity of the base, which reduces the bonding distance between the radio frequency port of the modulator chip and the metal via lead of the base, and can improve the high-frequency performance of the modulator chip. The tube shell is welded to the cover plate, the input optical fiber, the output optical fiber and the bottom plate to form a closed package with high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the three-dimensional split structure of the co-sealed device of the electro-optic modulation chip and the control chip coupled with the optical end face proposed by the present invention;

[0016] Figure 2 This is a schematic diagram of the electro-optical modulation chip structure of the optical end face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention;

[0017] Figure 3 This is a schematic diagram of the base structure of the optical end face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention;

[0018] Figure 4 This is a schematic diagram of the bottom plate structure of the optical end face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention.

[0019] Legend:

[0020] 1. Input optical fiber; 2. Electro-optical modulation chip; 21. Input optical coupling port; 22. RF input electrode; 23. Bias input electrode; 24. Output optical coupling port; 25. Monitoring optical coupling port; 3. Output optical fiber; 4. Monitoring photodetector; 41. Monitoring optical port; 42. Monitoring output port; 5. Base; 51. Base body; 52. Top cavity; 53. Bottom cavity; 54. Base surface wiring; 55. Base metal via; 6. Control chip; 61. Monitoring input port; 62. Bias output port; 63. Download input port; 64. Status output port; 7. Tube shell; 8. RF load; 9. Base plate; 91. Base plate medium; 92. Soldering belt; 93. Base surface wiring; 94. Base plate metal via; 95. Bottom solder ball; 10. Cover plate. DETAILED DESCRIPTION

[0021] Reference Figure 1-4 The optical end face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention comprises an input optical fiber 1, an electro-optical modulation chip 2, an output optical fiber 3, a monitoring photodetector 4, a base 5, a control chip 6, a tube shell 7, a radio frequency load 8, a bottom plate 9, and a cover plate 10; the base 5 is welded on the upper surface of the bottom plate 9, and a top cavity 52 and a bottom cavity 53 are sequentially arranged on the base 5 from top to bottom in the vertical direction, the tube shell 7 is welded on the upper surface of the bottom plate 9, and a cavity that can accommodate the base 5 is arranged on the tube shell 7, the top of the tube shell 7 is welded with a cover plate 10, the bottom cavity 53 is used to assemble the control chip 6, the electro-optical modulation chip 2 is bonded in the top cavity 52, and the monitoring photodetector is bonded on the top of the electro-optical modulation chip 2 4, an input optical fiber 1 and an output optical fiber 3 are welded on one side of the tube shell 7, and the input optical fiber 1 and the output optical fiber 3 extend to the cavity of the tube shell 7, the center of the input optical fiber 1 coincides with the center of the input optical coupling port 21 of the electro-optic modulation chip 2, the input light of the input optical fiber 1 is incident on the input optical coupling port 21 through end-face coupling, the center of the output optical coupling port 24 of the electro-optic modulation chip 2 coincides with the center of the output optical fiber 3, the output light of the output optical coupling port 24 is incident on the output optical fiber 3 through end-face coupling, the electro-optic modulation chip 2 is electrically connected to the control chip 6, and the monitoring photodetector 4 is electrically connected to the control chip 6 to realize the bias control closed loop of the electro-optic modulation chip 2.

[0022] In this embodiment, the top of the tube shell 7 is welded to the cover plate 10, the bottom of the tube shell 7 is welded to the bottom plate 9, and the input optical fiber 1 and the output optical fiber 3 are welded to one side of the tube shell 7 to form a closed cavity.

[0023] Specifically, Figure 2As shown, the interface of the electro-optic modulation chip 2 includes an input optical coupling port 21, an output optical coupling port 24, a monitoring optical coupling port 25, a radio frequency input electrode 22 and a bias input electrode 23; the input optical coupling port 21 and the output optical coupling port 24 are end-face coupling structures, which are used for optical coupling between the electro-optic modulation chip 2 and the input light and the output light; the monitoring optical coupling port 25 is an array waveguide grating or an on-chip optical reflection structure, which is used for vertical coupling of light between monitoring lights; the radio frequency input electrode 22 is a radio frequency signal loading port, and the bias input electrode 23 is a bias voltage loading port.

[0024] Specifically, Figure 4 As shown, the base plate 9 includes a base plate medium 91, a welding strip 92, a base plate surface wiring 93, a base plate metal via 94, and a bottom solder ball 95. The base plate surface wiring 93 is arranged on the upper surface of the base plate medium 91, and a plurality of groups of base plate metal vias 94 are arranged in an array on the base plate medium 91, and the plurality of groups of base plate metal vias 94 are distributed in a vertical direction, and the bottom ends of the plurality of groups of base plate metal vias 94 are welded with bottom solder balls 95 one by one.

[0025] In this embodiment, the bottom plate surface wiring 93 is used for welding and installation of the base 5 and the control chip 6 and signal transmission; the bottom plate metal vias 94 are used for signal transmission between the base 5 and the control chip 6 on the one hand, and on the other hand, the bottom plate metal vias 94 located below the control chip 6 form a heat dissipation channel, which can dissipate heat for the control chip 6.

[0026] Specifically, Figure 3 As shown, the base 5 includes a base body 51, a top cavity 52, a bottom cavity 53, a base surface wiring 54 and a base metal via 55. The upper surface of the base 5 is located on both sides of the top cavity 52 and is provided with multiple groups of base surface wiring 54. The interior of the base 5 is located on both sides of the top cavity 52 and is provided with multiple groups of base metal vias 55. The multiple groups of base metal vias 55 correspond one-to-one to the multiple groups of base surface wiring 54, and the top of the base metal via 55 is electrically connected to the base surface wiring 54.

[0027] Specifically, Figure 1 and Figure 4As shown, the interface of the control chip 6 includes a monitoring input port 61, a bias output port 62, a download input port 63, and a status output port 64. All interfaces of the control chip 6 are connected to the base plate 9 by wire bonding. The monitoring input port 61 is connected to the monitoring output port 42 of the monitoring photodetector 4 by wire bonding through the base plate surface wiring 93, the base metal via 55 and the base surface wiring 54 in turn; the bias output port 62 is connected to the bias input electrode 23 of the electro-optical modulation chip 2 by wire bonding through the base plate surface wiring 93, the base metal via 55 and the base surface wiring 54 in turn; the download input port 63 is electrically connected to the bottom solder ball 95 through the base plate surface wiring 93 and the base metal via 94 in turn, and the control program update and download signals are input through the bottom solder ball 95; the status output port 64 is electrically connected to the bottom solder ball 95 through the base plate surface wiring 93 and the base metal via 94 in turn, and the status signal of the control chip 6 is output through the bottom solder ball 95.

[0028] Specifically, Figure 1 and Figure 2 As shown, the RF input electrode 22 and the bias input electrode 23 of the electro-optic modulation chip 2 are wire-bonded to the base 5, and the RF input electrode 22 is divided into two ends. One end of the RF input electrode 22 is connected to an external RF signal, which is fed in through a group of bottom solder balls 95 on the base plate 9, and is fed into the RF input electrode 22 through wire bonding in sequence through the base metal via 94, the base metal via 55 and the base surface wiring 54, and the other end of the RF input electrode 22 is connected to the RF load 8 through wire bonding; the bias input electrode 23 is wire-bonded to the bias output port 62 of the control chip 6 through the base surface wiring 54, the base metal via 55 and the base surface wiring 93 in sequence, and the upper surface of the electro-optic modulation chip 2 is flush with the upper surface of the top cavity 52.

[0029] Specifically, Figure 1 and Figure 2 As shown, the interface of the monitoring photodetector 4 includes a monitoring optical port 41 and a monitoring output port 42. The monitoring optical port 41 is located on the lower surface of the monitoring photodetector 4, and the monitoring output port 42 is located on the upper surface of the monitoring photodetector 4; the monitoring photodetector 4 is bonded to the upper surface of the electro-optical modulation chip 2, and the monitoring optical port 41 coincides with the monitoring optical coupling port 25 of the electro-optical modulation chip 2; the monitoring output port 42 is wire-bonded to the base 5, and the monitoring output port 42 is wire-bonded to the monitoring input port 61 of the control chip 6 in sequence through the base surface wiring 54, the base metal via 55 and the bottom plate surface wiring 93.

[0030] In the specific working process of the electro-optic modulation chip and control chip co-sealed device with optical end face coupling of this embodiment, the input optical fiber 1 inputs the optical signal through the input optical coupling port 21 of the input electro-optic modulation chip 2, and is divided into two paths in the electro-optic modulation chip 2. The two optical signals are electro-optically converted through the radio frequency input electrode 22 of the electro-optic modulation chip 2, and are divided into two outputs after the two optical fields are coherent. One path is coupled into the output optical fiber 3 through the output optical coupling port 24 of the electro-optic modulation chip 2 to output the modulated optical signal, and the other path of the optical signal loaded with the radio frequency signal is converted into an electrical signal output on the monitoring photodetector 4 through the monitoring optical coupling port 25 of the electro-optic modulation chip 2. By controlling the bias voltage of the electro-optic modulation chip 2, the electro-optic modulation chip 2 can be adjusted to different bias working points such as the orthogonal working point (Quad+, Quad-), the maximum output point (Peak), the minimum output point (NULL), etc. Due to the characteristics of the electro-optic modulation chip 2, the working point of the electro-optic modulation chip 2 will drift slowly with the change of environmental factors such as temperature, resulting in the slow drift of system indicators such as output optical power and radio frequency signal modulation efficiency. In actual use, it is necessary to collect the monitoring signal output by the monitoring photodetector 4 through the control chip 6, compare the monitoring signal with the bias working point setting value, and adjust the voltage of the bias output port 62 of the control chip 6 according to the comparison result to form a closed-loop control, so as to achieve the consistency between the bias working point of the electro-optic modulation chip 2 and the program setting value. Commonly used electro-optic modulation chip 2 bias working point control methods include bias control methods based on jamming signal monitoring and bias control methods based on output light intensity monitoring. The control program update and download of the control chip 6 are fed in through the bottom solder ball 95 of the base plate 9, and then transmitted to the download input port 63 of the control chip 6 through the base plate metal via 94 and the base plate surface wiring 93. The status output port 64 of the control chip 6 is connected to the bottom solder ball 95 through the bottom surface wiring 93 and the bottom metal via 94 in sequence, and the status signal of the control chip 6 is output through the bottom solder ball 95 .

[0031] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. An electro-optical modulation chip and a control chip co-sealed device coupled with an optical end face, characterized in that: The invention comprises an input optical fiber (1), an electro-optical modulation chip (2), an output optical fiber (3), a monitoring photoelectric detector (4), a base (5), a control chip (6), a tube shell (7), a radio frequency load (8), a bottom plate (9), and a cover plate (10); the base (5) is welded to the upper surface of the bottom plate (9); a top cavity (52) and a bottom cavity (53) are arranged on the base (5) in sequence from top to bottom in the vertical direction; a tube shell (7) is welded to the upper surface of the bottom plate (9); a cavity for accommodating the base (5) is arranged on the tube shell (7); a cover plate (10) is welded to the top of the tube shell (7); the bottom cavity (53) is used for assembling the control chip (6); an electro-optical modulation chip (2) is bonded in the top cavity (52); a monitoring photoelectric detector (4) is bonded to the top of the electro-optical modulation chip (2); a portion of the tube shell (7) is welded to the top cavity (5 ... An input optical fiber (1) and an output optical fiber (3) are welded on the side, and the input optical fiber (1) and the output optical fiber (3) extend to the chamber of the tube shell (7), the center of the input optical fiber (1) coincides with the center of the input optical coupling port (21) of the electro-optic modulation chip (2), the input light of the input optical fiber (1) is incident on the input optical coupling port (21) through end-face coupling, the center of the output optical coupling port (24) of the electro-optic modulation chip (2) coincides with the center of the output optical fiber (3), the output light of the output optical coupling port (24) is incident on the output optical fiber (3) through end-face coupling, the electro-optic modulation chip (2) is electrically connected to the control chip (6), and the monitoring photodetector (4) is electrically connected to the control chip (6), so as to realize a bias control closed loop of the electro-optic modulation chip (2).

2. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 1, characterized in that: The interface of the electro-optic modulation chip (2) comprises an input optical coupling port (21), an output optical coupling port (24), a monitoring optical coupling port (25), a radio frequency input electrode (22) and a bias input electrode (23); the input optical coupling port (21) and the output optical coupling port (24) are end face coupling structures, used for optical coupling between the electro-optic modulation chip (2) and the input light and the output light; the monitoring optical coupling port (25) is an array waveguide grating or an on-chip optical reflection structure, used for vertical coupling of light between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, and the bias input electrode (23) is a bias voltage loading port.

3. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 1, characterized in that: The bottom plate (9) comprises a bottom plate medium (91), a welding strip (92), a bottom plate surface wiring (93), a bottom plate metal via (94), and a bottom solder ball (95). The bottom plate surface wiring (93) is arranged on the upper surface of the bottom plate medium (91), a plurality of groups of bottom plate metal vias (94) are arranged in an array on the bottom plate medium (91), and the plurality of groups of bottom plate metal vias (94) are distributed in a vertical direction, and the bottom ends of the plurality of groups of bottom plate metal vias (94) are welded with bottom solder balls (95) one by one.

4. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 3, characterized in that: The base (5) comprises a base body (51), a top cavity (52), a bottom cavity (53), a base surface wiring (54) and a base metal via (55); the upper surface of the base (5) is located on both sides of the top cavity (52) and is provided with a plurality of groups of base surface wiring (54); the interior of the base (5) is located on both sides of the top cavity (52) and is provided with a plurality of groups of base metal vias (55); the plurality of groups of base metal vias (55) correspond one-to-one to the plurality of groups of base surface wiring (54); and the top of the base metal via (55) is electrically connected to the base surface wiring (54).

5. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 4, characterized in that: The interface of the control chip (6) includes a monitoring input port (61), a bias output port (62), a download input port (63), and a status output port (64). All interfaces of the control chip (6) are connected to the base plate (9) by wire bonding. The monitoring input port (61) is connected to the monitoring output port (42) of the monitoring photodetector (4) by wire bonding in sequence through the base plate surface wiring (93), the base metal via (55), and the base surface wiring (54). The bias output port (62) is wire-bonded to the bias input electrode (23) of the electro-optic modulation chip (2) through the bottom plate surface wiring (93), the base metal via (55) and the base surface wiring (54) in sequence; the download input port (63) is electrically connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the control program update and download signals are input through the bottom solder ball (95); the status output port (64) is electrically connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the status signal of the control chip (6) is output through the bottom solder ball (95).

6. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 4, characterized in that: The radio frequency input electrode (22) and the bias input electrode (23) of the electro-optic modulation chip (2) are connected to the base (5) by wire bonding. The radio frequency input electrode (22) is divided into two ends. One end of the radio frequency input electrode (22) is connected to an external radio frequency signal. The external radio frequency signal is fed in through a group of bottom solder balls (95) on the bottom plate (9), and is fed into the radio frequency input electrode (22) by wire bonding in sequence through the bottom plate metal vias (94), the base metal vias (55) and the base surface wiring (54). The other end of the radio frequency input electrode (22) is connected to a radio frequency load (8) by wire bonding. The bias input electrode (23) is connected to the bias output port (62) of the control chip (6) by wire bonding in sequence through the base surface wiring (54), the base metal vias (55) and the bottom plate surface wiring (93). The upper surface of the electro-optic modulation chip (2) is flush with the upper surface of the top cavity (52).

7. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 4, characterized in that: The monitoring photoelectric detector (4) interface comprises a monitoring optical port (41) and a monitoring output port (42), wherein the monitoring optical port (41) is located on the lower surface of the monitoring photoelectric detector (4), and the monitoring output port (42) is located on the upper surface of the monitoring photoelectric detector (4); The monitoring photodetector (4) is bonded to the upper surface of the electro-optic modulation chip (2), and the monitoring optical port (41) overlaps with the monitoring optical coupling port (25) of the electro-optic modulation chip (2); the monitoring output port (42) is wire-bonded to the base (5), and the monitoring output port (42) is wire-bonded to the monitoring input port (61) of the control chip (6) in sequence through the base surface wiring (54), the base metal via (55) and the bottom plate surface wiring (93).

8. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 4, characterized in that: The bottom plate surface wiring (93) is used for welding and mounting the base (5) and the control chip (6) and for signal transmission; the bottom plate metal vias (94) are used for signal transmission between the base (5) and the control chip (6) on the one hand, and on the other hand, the bottom plate metal vias (94) located below the control chip (6) form a heat dissipation channel, which can dissipate heat from the control chip (6).

9. The optical end-face coupled electro-optic modulation chip and control chip co-sealed device according to claim 1, characterized in that: The top of the tube shell (7) is welded to the cover plate (10), the bottom of the tube shell (7) is welded to the bottom plate (9), and an input optical fiber (1) and an output optical fiber (3) are welded to one side of the tube shell (7) to form a closed cavity.

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