Wafer structure processing method, wafer structure and crystal oscillator

Abstract

The invention relates to the technical field of quartz crystal devices, and provides a processing method of a wafer structure, the wafer structure and a crystal oscillator, and the processing method comprises the steps: etching a hollow pattern in the middle of a mother wafer through a micro-nano technology, so as to form resonant wafers with the same size specification at the two sides of the hollow pattern, the two resonance wafers are symmetrical along the central axis of the mother wafer; electrodes are plated on the front faces and the back faces of the two resonance wafers, and the electrode on each face is electrically connected with the two resonance wafers. According to the processing method, two symmetrical resonance wafers located on the same horizontal plane are processed on a large wafer, and electrodes are arranged on the two faces of each resonance wafer respectively, so that when the two resonance wafers are located in a vibration environment, the induction conditions of the two wafers to external vibration are closest, and the vibration of the two resonance wafers is reduced. The acceleration vector is closest to zero after reverse superposition, and the acceleration sensitivity of the crystal oscillator is remarkably reduced.

Description

Technical Field

[0001] The invention relates to the technical field of quartz crystal devices, and in particular to a processing method for a chip structure, a chip structure and a crystal oscillator. Background Art

[0002] A frequency-stable quartz crystal oscillator can also cause phase noise degradation in a high-vibration environment, resulting in poor stability, frequency shifts or jumps. The main reason is the acceleration sensitivity of the crystal in vibration. When the crystal is in an acceleration field, the action and reaction forces produce static or quasi-static deformations. Due to the nonlinear elastic effect, the elastic wave and this static deformation interact, changing the wave velocity and, to a certain extent, the crystal size, causing the resonant frequency to change with the direction of the external acceleration field. A structure needs to be designed to reduce the acceleration sensitivity of the quartz crystal oscillator.

[0003] A typical technical solution is to use two crystals made by the same process to orient and symmetrically arrange them, and electrically couple them with the oscillator circuit so that their acceleration sensitivity vectors are antiparallel to achieve the effect of reducing sensitivity, thereby obtaining a crystal oscillator with low acceleration sensitivity. However, this method also has the following shortcomings: Since two crystals are used in this technical solution, the crystals must be oriented and matched so that the vectors are antiparallel. Even in crystals of the same design and manufacture, the acceleration vectors are not completely consistent, and the vector direction can vary by up to 60°. Therefore, the matching and installation of crystals in this method is a relatively complicated problem. This technical solution requires the manufacture of a crystal resonator first, and the testing and matching of the resonator, and then the electrical connection with the oscillation circuit to obtain an oscillator. Therefore, the process is cumbersome, the production cycle is long, and the production cost is high. Summary of the invention

[0004] The present invention provides a processing method of a chip structure, a chip structure and a crystal oscillator, which are used to solve the defects of the crystal oscillator in the prior art that the acceleration sensitivity is high and the low acceleration sensitivity is difficult to prepare.

[0005] The first aspect of the present invention provides a method for processing the chip structure of a crystal oscillator, comprising the following steps: etching a hollow pattern in the middle of a mother chip by a micro-nano process to form resonant chips with the same size specifications on both sides of the hollow pattern, and the two resonant chips are symmetrical along the central axis of the mother chip; electrodes and connecting coatings with the same shape and size are plated on the front and back sides of the two resonant chips, and the connecting coatings are used to electrically connect the two resonant chips, and the electrodes on each side are electrically connected to the resonant chips to which they are connected, so that the acceleration vectors of the two resonant chips are anti-parallel and cancel each other out under external vibration induction.

[0006] According to the processing method of the crystal oscillator chip structure provided by the present invention, the processing method also includes: processing pins on the front and back sides of the two resonant chips through micro-nano processing technology, and the pins are electrically connected to the electrodes.

[0007] A second aspect of the present invention provides a chip structure of a crystal oscillator, which is prepared by the processing method of the chip structure of the crystal oscillator provided above, and the chip structure includes: a mother chip, a hollow hole is opened in the middle of the mother chip, and a first resonant chip and a second resonant chip are formed on both sides of the hollow hole, the first resonant chip and the second resonant chip have the same size specifications, and the first resonant chip and the second resonant chip are symmetrical along the central axis of the mother chip; electrodes are provided on the front and back sides of the first resonant chip, and the mother chip is provided with a connecting coating, and the connecting coating is used to connect the first chip and the second chip.

[0008] According to the wafer structure of the crystal oscillator provided by the present invention, the mother wafer is a rectangular sheet structure, and the connecting coating is arranged along the edge of the mother wafer.

[0009] According to the crystal oscillator chip structure provided by the present invention, the electrode on the first resonance chip and the electrode on the second resonance chip have the same shape and size specifications.

[0010] According to the crystal oscillator chip structure provided by the present invention, the connecting plating layer at least includes a first connecting section, and the first connecting section is electrically connected to the first resonant chip and the second resonant chip.

[0011] According to the wafer structure of the crystal oscillator provided by the present invention, the hollow hole includes an “I”-shaped hollow hole or an “I”-shaped hollow hole.

[0012] According to the wafer structure of the crystal oscillator provided by the present invention, the electrode is a gold electrode.

[0013] According to the crystal oscillator chip structure provided by the present invention, pins are provided on the front and back sides of the first resonant chip and the second resonant chip, and the pins are electrically connected to the electrodes.

[0014] The third aspect of the present invention provides a crystal oscillator, comprising: a base, the base having an inner cavity, an oscillation circuit for stably outputting a frequency signal is provided at the bottom of the inner cavity; the inner cavity is a square inner cavity, four steps are provided at the four corners of the inner cavity, the chip body is provided on the steps through conductive glue, and is located above the oscillation circuit; wherein the chip body adopts the chip structure of the crystal oscillator provided in any of the above embodiments.

[0015] On one hand, the present invention provides a method for processing a chip structure, through which two symmetrical resonant chips on the same horizontal plane are formed on a larger chip, each resonant chip is provided with electrodes on both sides, and the two resonant chips are electrically connected through a connecting coating on the mother chip. This makes it possible for the two resonant chips to be most similar in their induction of external vibrations when they are in a vibration environment, so that the acceleration vector is closest to zero after reverse superposition.

[0016] Another aspect of the present invention provides a crystal oscillator, which has a chip body therein. The structure of the chip body is prepared using the above-mentioned processing method, which allows the chip body with a reverse acceleration vector to be directly connected to the circuit elements, avoiding the production, screening and matching processes in the related technology, and also avoiding secondary packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a schematic flow chart of the processing method of the wafer structure provided by the present invention.

[0019] Figure 2 It is a structural schematic diagram of the front side of the wafer structure provided by the present invention.

[0020] Figure 3 It is a structural schematic diagram of the back side of the wafer structure provided by the present invention.

[0021] Figure 4 It is a structural schematic diagram of another hollow hole shape of the wafer structure provided by the present invention.

[0022] Figure 5 It is a structural schematic diagram of another hollow hole shape of the chip structure provided by the present invention.

[0023] Figure 6 It is a structural schematic diagram of the crystal oscillator provided by the present invention.

[0024] Reference numerals: 1. Chip body; 10. Mother chip; 11. First resonant chip; 12. Second resonant chip; 13. Hollow hole; 14. Electrode; 15. Connecting plating layer; 16. Pin; 17. Support part; 2. Base; 21. Chip; 22. Step part. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0027] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0028] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0029] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0030] Combine the following Figure 1 A method for processing a crystal oscillator wafer structure of the present invention is described, comprising the following steps: Step S100 , a hollow pattern is etched in the middle of the mother wafer 10 by micro-nano process to form resonant wafers with the same size on both sides of the hollow pattern, and the two resonant wafers are symmetrical along the central axis of the mother wafer 10 .

[0031] Specifically, the mother wafer 10 refers to the original wafer, and a hollow pattern is processed in the middle of the original wafer, and the wafers on both sides of the hollow pattern are used as oscillating resonant wafers, which can ensure that the two resonant wafers are on the same horizontal plane. The hollow pattern can make the two resonant wafers have the same size specifications and can achieve symmetry of the central axis, so that when the two resonant wafers are in a vibration environment, the induction of the two resonant wafers to the external vibration is the closest, and the acceleration vector direction is closest to zero after superposition, which significantly reduces the acceleration sensitivity.

[0032] It can be understood that in this embodiment, the two resonant chips processed on the same mother chip 10 have similar acceleration sensitivity under the same acceleration. When the two resonant chips are made in opposite directions, two reverse acceleration vectors can be obtained, so that the reverse superposition of the acceleration vectors of the two resonant chips is close to zero after being made into a crystal oscillator.

[0033] Step S200, electrodes 14 and connecting coatings 15 are plated on the front and back sides of the two resonant chips 10, the connecting coating 15 on each side is electrically connected to the two resonant chips, and the electrodes 14 on each side are electrically connected to the respective connected resonant chips, so that the acceleration vectors of the two resonant chips are anti-parallel and cancel each other out under external vibration induction.

[0034] Specifically, electrodes 14 and connecting coatings 15 are formed on the front and back of the mother chip 10 by micro-nano processing technology, that is, the electrodes 14 and the connecting coatings 15 are formed by simultaneous electroplating. The electrodes are used to electrically connect to the respective connected resonant chips, and the connecting coatings 15 are used to connect the two resonant chips on each side (front and back). One of the two resonant chips is configured as a forward chip, and the resonant chip of the remaining one is configured as a reverse chip, so that the acceleration vector can be reversely superimposed under the same external vibration environment, thereby reducing the acceleration sensitivity.

[0035] During specific processing: first, obtain the original wafer to be processed, that is, obtain the mother wafer 10. Usually, the surface of the mother wafer 10 already has some layers (such as an oxide layer); then apply a layer of photoresist on the surface of the wafer. This photoresist is usually photosensitive, and its chemical properties allow it to undergo chemical changes according to the light irradiation pattern. Use a mask to project the image of a specific hollow pattern onto the surface of the wafer coated with photoresist. This step uses an ultraviolet light source, and the photoresist undergoes chemical changes after being irradiated with light to form an image of the pattern on the mask. After exposure, the wafer is immersed in a developer. The developer will dissolve the unexposed (or exposed) part of the photoresist. According to the properties of the photoresist and the required pattern, the development time can be adjusted to ensure that the complete pattern is formed. After the wafer is developed, it enters the etching step. The etching can be carried out by dry or wet etching. The specific etching method is the same as the relevant technology, so it will not be repeated. After the etching is completed, a hollow pattern is formed, and the photoresist is removed to obtain a resonant wafer located on the mother wafer 10.

[0036] Then, metallization treatment is performed on one side of the prepared mother wafer 10 (i.e., the wafer with a hollow pattern), and the electrode 14 on one side is usually plated on the resonant wafer by evaporation coating or sputtering coating. The shape of the electrode can be determined by the tooling. After one side is completed, the electrode 14 is prepared on the other side in the same way, so that the front and back sides of the mother wafer 10 are provided with electrodes 14. And the electrodes 14 on both sides have the same size.

[0037] It should be noted that the “front” and “back” recorded in this specification are two opposite sides. For the convenience of description, one side is designated as the “front” and the remaining side is designated as the “back” in the description, but those skilled in the art should know that the “front” and “back” in the description can be swapped.

[0038] The processing method of the crystal oscillator wafer structure provided by the present invention also includes the steps of: processing pins 16 on the front and back of the resonant wafer by micro-nano processing technology, and electrically connecting the pins 16 to the electrodes 14. The processing of the pins 16 is processed simultaneously with the electrodes 14 and the connecting plating layer 15, and the setting of the metal plating layer is achieved by simultaneous processing. The pins 16 are used as the connection points between external circuits and devices, and can be connected to the external oscillation circuit through the pins 16, so as to achieve stable frequency output.

[0039] Specifically, the pin 16 is obtained by simultaneous processing with the electrode, that is, the pin 16 is arranged while the electrode 14 is electroplated and the plating layer 15 is connected.

[0040] It can be understood that in the above embodiment, the electrode and the pin 16 are arranged on the resonant chip by the same micro-nano processing method as the electrode 14 and the connecting coating 15. This method allows the electrode and the pin 16 to be very thin so as not to affect the oscillation of the resonant chip.

[0041] like Figure 2 As shown, the second aspect of the present invention provides a crystal oscillator chip structure, which is prepared by the processing method of the crystal oscillator chip structure provided above, and the chip structure includes: a mother chip 10, an electrode 14, and a connecting coating 15. A hollow hole 13 is opened in the middle of the mother chip 10, and a first resonant chip 11 and a second resonant chip 12 are formed on both sides of the hollow hole 13. The first resonant chip 11 and the second resonant chip 12 have the same size specifications, and the first resonant chip 11 and the second resonant chip 12 are symmetrical along the central axis of the mother chip 10; the front and back sides of the first resonant chip 11 and the second resonant chip 12 are both provided with electrodes 14, and the mother chip is provided with a connecting coating 15, and the connecting coating 15 is used to connect the first resonant chip 11 and the second resonant chip 12.

[0042] It can be understood that the first resonant chip 11 and the second resonant chip 12 are two chips formed on the same mother chip 10, and the two resonant chips have the same horizontal plane, and the two resonant chips have the same size specifications and are symmetrical along the central axis, which makes them closest to external vibration induction. When vibrating, the two chips can obtain two opposite acceleration vectors, and the opposite acceleration vectors are superimposed and offset, thereby realizing a low acceleration sensitive chip structure.

[0043] When specifically set, the power supply is connected to the electrode 14 of the resonant chip mounted on the rear stage of the package, so as to transmit the electrical signal to the resonant chip, so that it vibrates, and the connecting coating 15 connects the two resonant chips, which can effectively reduce the sensitivity of the oscillator to external acceleration, especially when dealing with mechanical vibration or physical impact. Specifically, the working principle of the crystal oscillator is based on the resonance characteristics of the crystal, which will produce a very stable frequency output. However, the frequency of the oscillator can be affected by the external environment, especially when there is mechanical vibration or impact, these influences may cause changes in the oscillator frequency, thereby affecting the normal operation of the system. In this embodiment, by electrically connecting the two ends of one of the resonant chips to the oscillation circuit, and the other resonant chip is connected through the connecting coating 15, the two are reversely complementary, which can effectively reduce the sensitivity of the oscillator to external acceleration changes. This configuration will make the crystal more stable under the action of the electric field, reducing the impact of changes in the external physical environment on its frequency stability.

[0044] It should be noted that since the "front" and "back" are in a relative position relationship, they can be swapped with each other.

[0045] According to an embodiment of the present invention, the mother wafer 10 is a rectangular sheet structure, and the connection coating 15 is arranged on a portion of the periphery of the mother wafer 10. The connection coating 15 has a predetermined shape and a predetermined arrangement position.

[0046] It can be understood that the hollow hole 13 is arranged so that the mother chip 10 has a resonant chip part and an edge part on both sides of the edge, and the connecting coating is located at a part of the edge area, and the two surfaces (front and back) of the first resonant chip 11 and the second resonant chip 12 can be electrically connected through the connecting coating 15. In this way, the oscillation states of the two resonant chips are most similar.

[0047] In the specific configuration, the electrodes 14 on the first resonant chip and the second resonant chip have the same shape and size. The same electrode specifications and sizes facilitate preparation and can further make the oscillation states of the first resonant chip 11 and the second resonant chip 12 closest to each other, thereby reducing the acceleration sensitivity of the crystal oscillator.

[0048] In a specific embodiment, the connecting coating layer includes at least a first connecting section, and the first connecting section is electrically connected to the first resonant wafer 11 and the second resonant wafer 12. The first connecting section is used to connect the first resonant wafer 11 and the second resonant wafer 12 so that the first resonant wafer 11 and the second resonant wafer 12 are electrically connected. In this embodiment, the first connecting section is located at a predetermined position on the front surface, and the first connecting section straddles the first resonant wafer 11 and the second resonant wafer 12. Specifically, when setting, a first connecting section is also provided on the back surface, and the first connecting sections on the two surfaces are centrosymmetric, which is beneficial to the processing of the connecting section.

[0049] In a specific application, the electrodes on the first resonant wafer 11 and the second resonant wafer 12 are both gold electrodes, that is, electrodes made of gold. Gold electrodes have more stable electrical conductivity, higher reliability, and longer service life.

[0050] In some embodiments, pins 16 are provided on both surfaces of the first resonant wafer 11 and the second resonant wafer 12. Among them, the pins on the two surfaces are electrically connected to the electrodes on the corresponding resonant wafers respectively, and the pins 16 can be connected to an external oscillation circuit to achieve stable frequency output.

[0051] As Figure 2 shown, in some embodiments provided by the present invention, the hollow hole 13 includes a "work" - shaped hollow hole 13. The "work" - shaped hollow hole 13 can make the first resonant wafer 11 and the second resonant wafer 12 on both sides have the same size specifications and can achieve central axis symmetry, so that the first resonant wafer 11 and the second resonant wafer 12 have the closest vibration sensing states.

[0052] As Figure 3 、 Figure 4 shown, in some embodiments, the middle part of the "work" - shaped hollow hole 13 has a support part 17, that is, when processing, a "U" - shaped hollow structure is processed on both sides of the support part 17, and the two "U" - shaped hollow structures form a generally "work" - shaped hollow hole 13. The way of setting the support part 17 in the middle can make the overall structural strength higher.

[0053] As Figure 5 shown, in some other embodiments, the hollow hole 13 includes an "I" - shaped hollow hole 13, that is, a vertical hollow hole 13 is directly processed in the middle of the mother wafer 10. This way can make the stability and reliability of the resonant wafer higher.

[0054] Among them, the size of the hollow hole 13 is not limited. The size of the hollow hole 13 will affect the stability, resistance, etc. of the resonant wafer, and its size can be adjusted according to the design requirements.

[0055] As Figure 6As shown, the third aspect of the present invention provides a crystal oscillator, including a base 2, the base 2 has an inner cavity, and an oscillation circuit for stably outputting the oscillation frequency of the chip body 1 is provided at the bottom of the inner cavity; the inner cavity is a square inner cavity, and four steps 22 are provided at the four corners of the inner cavity. The chip body 1 is arranged on the step 22 through a conductive glue and is located above the oscillation circuit; wherein the chip body 1 adopts the chip structure of the crystal oscillator provided in any of the above embodiments.

[0056] In the specific configuration, the circuit element includes an integrated circuit (IC) chip 21, and the IC chip 21 has a plurality of pins, which are recorded as chip pins in order to distinguish them from the pins in the chip structure. The chip pins are connected to the terminal of the base 2 through wires to form an oscillation component, and the chip is connected to the step 22 of the oscillation component through a conductive adhesive to form an oscillation member. That is, the top surface of the step 22 is higher than the IC chip 21, and the step 22 is used to support the chip body 1 and realize the conduction of the electrode. Specifically, the power supply is connected to one end of the electrode 14 of the resonant chip mounted on the step 22, so as to transmit the electrical signal to the resonant chip to cause it to vibrate.

[0057] It can be understood that the chip body 1 structure in the present invention avoids the problems of crystal matching and installation in conventional crystal oscillators. By directly obtaining two resonant chips with close and opposite acceleration vectors, the production process of low acceleration sensitivity oscillators is simplified, and the early crystal production, screening, and matching processes are eliminated, effectively shortening the production cycle, improving efficiency, and greatly reducing production costs, avoiding waste of raw materials, labor and other resources.

[0058] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for processing a crystal oscillator wafer structure, characterized in that: The following steps are involved: A hollow pattern is etched in the middle of the mother wafer by micro-nano process to form resonant wafers with the same size on both sides of the hollow pattern, and the two resonant wafers are symmetrical along the central axis of the mother wafer; Electrodes and connecting layers of the same shape and size are plated on the front and back sides of the two resonant chips. The connecting layers are used to electrically connect the two resonant chips. The electrodes on each side are electrically connected to the resonant chips to which they are connected, so that the acceleration vectors of the two resonant chips are anti-parallel and cancel each other out under external vibration induction.

2. The method for processing the wafer structure of a crystal oscillator according to claim 1, characterized in that: The processing method further comprises: processing pins on the front and back sides of the two resonant wafers through a micro-nano processing technology, wherein the pins are electrically connected to the electrodes.

3. A crystal oscillator chip structure, characterized in that: The crystal oscillator is prepared by the processing method of the crystal oscillator wafer structure according to claim 1 or 2, wherein the wafer structure comprises: A mother wafer, wherein a hollow hole is opened in the middle of the mother wafer, and a first resonant wafer and a second resonant wafer are formed on both sides of the hollow hole, the first resonant wafer and the second resonant wafer have the same size and specification, and the first resonant wafer and the second resonant wafer are symmetrical along the central axis of the mother wafer; Electrodes are provided on the front and back sides of the first resonant chip and the second resonant chip, and a connecting plating layer is provided on the mother chip, and the connecting plating layer is used to connect the first chip and the second chip.

4. The crystal oscillator chip structure according to claim 3, characterized in that: The mother wafer is a rectangular sheet structure, and the connecting coating is arranged along the edge of the mother wafer.

5. The crystal oscillator chip structure according to claim 3, characterized in that: The electrodes on the first resonance wafer and the electrodes on the second resonance wafer have the same shape and size.

6. The crystal oscillator chip structure according to claim 3, characterized in that: The connection plating layer includes at least a first connection section, and the first connection section is electrically connected to the first resonant chip and the second resonant chip.

7. The crystal oscillator chip structure according to claim 3, characterized in that: The hollow holes include "I"-shaped hollow holes or "I"-shaped hollow holes.

8. The crystal oscillator chip structure according to claim 3, characterized in that: The electrode is a gold electrode.

9. The crystal oscillator chip structure according to claim 3, characterized in that: Pins are provided on the front and back sides of the first resonant chip and the second resonant chip, and the pins are electrically connected to the electrodes.

10. A crystal oscillator, characterized in that: include: A base, the base having an inner cavity, the bottom of the inner cavity being provided with an oscillation circuit for outputting a frequency signal stably; The inner cavity is a square inner cavity, and four steps are arranged at the four corners of the inner cavity. The chip body is arranged on the steps through conductive glue and is located above the oscillation circuit. Wherein, the chip body adopts the chip structure of the crystal oscillator as described in any one of claims 3-9.

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