Field effect transistor control circuit, system, method and device and electronic equipment

Abstract

The invention provides a field-effect tube control circuit, system, method and device and electronic equipment, is applied to the technical field of field-effect tubes, and aims to solve the problems of high cost and large limitation of the field-effect tubes. A current detection circuit detects a current signal of a source electrode of the field-effect tube through a second sampling resistor, a calculation circuit obtains heat information of the field-effect tube according to a voltage signal and the current signal, and a controller analyzes the heat information through a pre-established heat prediction model to obtain heat information of the field-effect tube at the next moment. Under the condition that the heat information of the field effect transistor at the next moment is larger than the corresponding tolerance threshold value, the field effect transistor is controlled to be closed; the anti-damage capability of the field effect transistor can be improved, the structure is simple, design is convenient, the design cost is low, the size is small, and limitation is reduced.

Description

Technical Field

[0001] The present invention relates to the field of field effect tube technology, and in particular to a field effect tube control circuit, system, method, device and electronic equipment. Background Art

[0002] With the rapid development of artificial intelligence algorithms, AI (Artificial Intelligence) server models have emerged. Since the power consumption of AI server models is higher than that of general servers, the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that plays a switching role on the server board will need to withstand larger and larger currents, which will generate higher temperatures and more heat, posing greater challenges to the stability and tolerance of the field effect transistor. Not only does the MOSFET need to be able to quickly and accurately shut down when encountering large currents, but it also needs to not be damaged when subjected to higher temperatures and currents.

[0003] At present, there are usually the following strategies to improve the damage resistance of MOSFET:

[0004] First, by increasing the size of the MOSFET to increase the heat dissipation area, reduce heat accumulation and thus reduce the risk of burning; second, use more advanced semiconductor materials to improve current carrying capacity; third, through better quality semiconductor materials to bring higher breakdown voltage and lower current channel impedance, so as to reduce the heat generated when the current is passing through the internal structure of the MOSFET; fourth, redundant configuration is performed in the circuit to ensure that the redundant MOSFET can continue to work if one of them is damaged.

[0005] However, increasing the heat dissipation area requires increasing the size of MOSFET, which results in greater product limitations; redundant configuration in the circuit will increase product size and cost; and using more advanced semiconductor materials or higher-quality semiconductor materials will also result in greater difficulty and cost in design and production.

[0006] In view of this, how to reduce the cost and design difficulty and alleviate the limitations while improving the damage resistance of the field effect tube is a problem that technical personnel in this field need to solve. Summary of the invention

[0007] The purpose of the embodiments of the present invention is to provide a field effect transistor control circuit, system, method, device and electronic equipment, which can reduce costs and design difficulty while improving the damage resistance of the field effect transistor and have few limitations.

[0008] To solve the above technical problems, an embodiment of the present invention provides a field effect transistor control circuit, including: a first voltage detection circuit, a first sampling resistor, a current detection circuit, a second sampling resistor, a calculation circuit and a control circuit, wherein:

[0009] The input end of the first voltage detection circuit is connected to the source of the field effect tube through the first sampling resistor, and the output end of the first voltage detection circuit is connected to the input end of the calculation circuit; the first voltage detection circuit is used to detect the voltage signal of the source;

[0010] The input end of the current detection circuit is connected to the source of the field effect tube through the second sampling resistor, and the output end of the current detection circuit is connected to the input end of the calculation circuit; the current detection circuit is used to detect the current signal of the source;

[0011] The output end of the calculation circuit is connected to the input end of the control circuit; the calculation circuit is used to obtain the heat information of the field effect tube according to the voltage signal and the current signal;

[0012] The output end of the controller is connected to the gate of the field effect tube; the controller is used to analyze the heat information using a pre-established heat prediction model, and control the field effect tube to shut down when it is determined that the heat value of the field effect tube at the next moment is greater than the corresponding tolerance threshold.

[0013] In some embodiments, it further includes a second voltage detection circuit, a third sampling resistor, a processor and an alarm, wherein: the input end of the second voltage detection circuit is connected to the drain of the field effect tube through the third sampling resistor, the output end of the second voltage detection circuit is connected to the input end of the processor, and the output end of the processor is connected to the alarm;

[0014] The second voltage detection circuit is used to detect the drain voltage of the field effect tube;

[0015] The processor is used to obtain a drain current according to the drain voltage, and compare the drain current with a drain current threshold, and trigger the alarm when the drain current is greater than the drain current threshold.

[0016] In some embodiments, the device further comprises a first filter circuit and a second filter circuit, wherein the input terminal of the first filter circuit is connected to an external input signal, and the output terminal of the first filter circuit is connected to the drain of the field effect transistor; the input terminal of the second filter circuit is connected to the external input signal, and the output terminal of the second filter circuit is connected to the source of the field effect transistor;

[0017] The first filter circuit is used for filtering the external input signal and outputting it to the drain of the field effect transistor;

[0018] The second filtering circuit is used for filtering the external input signal and then outputting it to the source of the field effect transistor.

[0019] In some embodiments, the invention further comprises a temperature detection circuit, a thermistor, a micro pump and a liquid cooling system, wherein the input end of the temperature detection circuit is connected to the hole-type semiconductor and the electron-type semiconductor junction of the field effect tube through the thermistor, the output end of the temperature detection circuit is connected to the control end of the micro pump, the output end of the micro pump is connected to the control end of the liquid cooling system, and the liquid cooling system is arranged on the surface of the field effect tube;

[0020] The temperature detection circuit is used to detect the temperature of the junction of the hole-type semiconductor and the electron-type semiconductor, and control the micro pump to start when the temperature is greater than a preset temperature threshold;

[0021] The micro pump is used to drive the coolant inside the liquid cooling system to flow after startup.

[0022] In some embodiments, the liquid cooling system includes a liquid cooling tube, in which coolant is contained, an insulating layer is provided at the bottom of the hole-type semiconductor and electron-type semiconductor junction in the field effect transistor, a first copper foil layer is provided below the insulating layer, the first part of the liquid cooling tube is arranged below the first copper foil layer, a second copper foil layer is provided below the first part of the liquid cooling tube, the second part of the liquid cooling tube is arranged on the side of the field effect transistor, a third copper foil layer is provided on the outside of the second part of the liquid cooling tube, and the first copper foil layer, the second copper foil layer and the third copper foil layer are encapsulated in an outer shell on the outside.

[0023] In some embodiments, the process of establishing the pre-established heat prediction model includes:

[0024] Obtain the mathematical model of the heat rise function of the field effect tube over time;

[0025] Linearizing the mathematical model of the heat-rise function of heat versus time to obtain a linearized mathematical model of the heat-rise function;

[0026] Converting the linearized heat rise function mathematical model in the time domain to the complex frequency domain to obtain the linearized heat rise function mathematical model in the complex frequency domain;

[0027] Discretizing the linearized heat rise function mathematical model in the complex frequency domain to obtain a discretized heat rise function mathematical model;

[0028] The heat transfer function of the field effect tube is obtained by combining the discretized heat rise function mathematical model with the delay coefficient;

[0029] Obtaining a state space model of the input and output of the field effect tube through the heat transfer function of the field effect tube;

[0030] Obtaining an observation matrix according to a state matrix in the state space model;

[0031] The state space model and the observation matrix are multiplied, and the product is transposed to obtain a heat prediction model.

[0032] Another aspect of the present invention provides a field effect transistor control system, including a field effect transistor and the field effect transistor control circuit as described above.

[0033] Another aspect of the present invention provides a field effect transistor control method, comprising:

[0034] During the conduction process of the field effect tube, collecting the voltage signal and current signal of the source of the field effect tube;

[0035] Determining current heat information of the field effect tube according to the voltage signal and the current signal;

[0036] Analyzing the current heat information according to a pre-established heat prediction model to obtain heat information of the field effect tube at the next moment;

[0037] When it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than a tolerance threshold, the field effect tube is controlled to be turned off.

[0038] In some embodiments, determining the current heat information of the field effect transistor according to the voltage signal and the current signal includes:

[0039] Establishing a voltage change curve of the field effect tube from being turned on to the current moment according to the voltage signal;

[0040] Establishing a current variation curve of the field effect tube from being turned on to the current moment according to the current signal;

[0041] According to the voltage change curve and the current change curve, a heat change curve of the field effect tube from being turned on to the current moment is obtained;

[0042] According to the heat change curve, current heat information of the field effect tube at the current moment is determined.

[0043] Another aspect of the present invention provides a field effect transistor control device, comprising:

[0044] The acquisition module is used to acquire the voltage signal and current signal of the source of the field effect tube during the conduction process of the field effect tube;

[0045] A determination module, used to determine current heat information of the field effect tube according to the voltage signal and the current signal;

[0046] An analysis module, used to analyze the current heat information according to a pre-established heat prediction model to obtain the heat information of the field effect tube at the next moment;

[0047] The control module is used to control the field effect tube to shut down when it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than the tolerance threshold.

[0048] Another aspect of the present invention provides an electronic device, comprising:

[0049] Memory for storing computer programs;

[0050] A processor is used to execute the computer program to implement the steps of field effect transistor control as described above.

[0051] It can be seen from the above technical solution that the beneficial effects of the present invention are:

[0052] The embodiment of the present invention provides a field effect tube control circuit, system, method, device and electronic device, the circuit comprising: a first voltage detection circuit, a first sampling resistor, a current detection circuit, a second sampling resistor, a calculation circuit and a control circuit, wherein: the input end of the first voltage detection circuit is connected to the source of the field effect tube through the first sampling resistor, and the output end of the first voltage detection circuit is connected to the input end of the calculation circuit; the first voltage detection circuit is used to detect the voltage signal of the source; the input end of the current detection circuit is connected to the source of the field effect tube through the second sampling resistor, and the output end of the current detection circuit is connected to the input end of the calculation circuit; the current detection circuit is used to detect the current signal of the source; the output end of the calculation circuit is connected to the input end of the control circuit; the calculation circuit is used to obtain the heat information of the field effect tube according to the voltage signal and the current signal; the output end of the controller is connected to the gate of the field effect tube; the controller is used to analyze the heat information using a pre-established heat prediction model, and control the field effect tube to be turned off when it is determined that the heat value of the field effect tube at the next moment is greater than the corresponding tolerance threshold.

[0053] It can be seen that in the embodiment of the present invention, the voltage signal of the source of the field effect tube is detected by the first voltage detection circuit through the first sampling resistor, and the voltage signal is output to the calculation circuit, the current signal of the source of the field effect tube is detected by the current detection circuit through the second sampling resistor, and the current signal is output to the calculation circuit, the calculation circuit processes the voltage signal and the current signal to obtain the heat information of the field effect tube, and then sends the heat information to the controller, the controller uses a pre-established heat prediction model to analyze the heat information, and obtains the heat information of the field effect tube at the next moment, and controls the field effect tube to be turned off when the heat information of the field effect tube at the next moment is greater than the corresponding tolerance threshold; the present invention can turn off the field effect tube before the heat of the field effect tube reaches the maximum heat, that is, the field effect tube can be turned off before the field effect tube is damaged, thereby improving the damage resistance of the field effect tube, and the present invention has a simple structure, is easy to design, has a low design cost, and is small in size, and has reduced limitations. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0055] Figure 1 A waveform diagram of a short-circuit current generated by a MOSFET in the related art when it is short-circuited;

[0056] Figure 2 A schematic diagram of the structure of a field effect transistor control circuit provided by an embodiment of the present invention;

[0057] Figure 3 A field effect tube damage principle diagram provided by an embodiment of the present invention;

[0058] Figure 4 A standard temperature rise curve diagram of a MOSFET provided by an embodiment of the present invention;

[0059] Figure 5 A schematic diagram of the structure of another field effect transistor control circuit provided by an embodiment of the present invention;

[0060] Figure 6 A schematic diagram of the structure of another field effect transistor control circuit provided by an embodiment of the present invention;

[0061] Figure 7 A structural diagram of a filter circuit provided by an embodiment of the present invention;

[0062] Figure 8A table diagram of measured current and temperature of different sizes provided by an embodiment of the present invention;

[0063] Fig. 9 A temperature rise curve diagram of MOSFETs of different specifications provided by an embodiment of the present invention;

[0064] Fig.10 A schematic diagram of a partial structure of a field effect transistor control circuit provided by an embodiment of the present invention;

[0065] Fig.11 A schematic diagram of the internal structure of a MOSFET provided by an embodiment of the present invention;

[0066] Fig.12 A schematic diagram of a liquid cooling tube arrangement method provided in an embodiment of the present invention;

[0067] Fig.13 A schematic flow chart of a field effect transistor control method provided by an embodiment of the present invention;

[0068] Fig.14 A schematic structural diagram of a field effect transistor control device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0069] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0070] The terms "including" and "having" in the specification of the present invention and the above-mentioned drawings, as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but may include steps or units that are not listed.

[0071] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0072] When the field effect transistor MOSFET is working, electrons will flow from the drain to the source, thus forming a current from the source to the drain. The current is limited by the field effect transistor itself and is called the maximum rated current. Once the current exceeds the maximum rated current of the field effect transistor, there is a high probability that the field effect transistor will be burned. At the same time, a large amount of heat will be generated due to the existence of impedance on the path where the current flows. If this part of the heat cannot be dissipated in time, it will also cause thermal damage to the MOSFET, which may cause the internal package cavity of the MOSFET to rupture and damage, and may also cause the PCB (Printed Circuit Board) to be blown through and cause huge losses.

[0073] Figure 1 This is the waveform of the short-circuit current generated by the P54V MOSFET during the actual test of the AI ​​server. The MOSFET burned out and broke down the circuit board due to excessive current at the moment of short circuit. During the test, a load line is welded at the chip output capacitor position for load pulling, and the short-circuit test sets the load at the load end to a short-circuit state. Figure 1 In the waveform, channel one is the VDS waveform, that is, the difference between the input Vin and the output Vout, where Vds is the voltage between the drain and source of the field effect tube; channel two is the gate signal GATE, when the signal reaches a high level, the MOSFET becomes turned on; channel three is the current, which is used to measure the output current in this state; channel four is the power P calculated by the built-in matlab of the oscilloscope, which is used to observe the power flowing through the MOSFET at this moment.

[0074] The reason why the MOSFET exploded can be analyzed from the waveform. When the output is short-circuited, the MOSFET is not turned off in time, resulting in the current flowing through the MOSFET being too large and exceeding its tolerance range. The heat quickly accumulated inside the MOSFET reaches its tolerance value, so the MOSFET fails due to thermal damage and explodes at the same time.

[0075] The energy consumption and current of AI servers are not large in the M7 platform. If upgraded to the M8 platform, the short-circuit tolerance of MOSFET will face another huge challenge. Therefore, it is necessary to optimize and upgrade the performance of MOSFET, and at the same time, improve the ability of MOSFET to resist damage when facing high current or short circuit.

[0076] At present, the protection of field effect tubes is mainly achieved by setting a power limit Plimit on the front-end chip, controlling the shutdown and opening of the MOSFET gate (Gate) by monitoring the input power of the chip, and then controlling the switching of the MOSFET to protect the back-end circuit and the field effect tube itself. This protection mechanism is relatively simple, and the short-circuit protection action depends entirely on whether the gate voltage can be quickly reduced to below the MOSFET turn-on threshold. If the voltage cannot be quickly reduced to a low level, the heat generated by the short-circuit current during this period needs to be borne entirely by the MOSFET itself, which will cause thermal damage to the conductive channel and cavity.

[0077] As the output capacity of servers is further improved and the current continues to increase, MOSFET, as an extremely important switching element in the circuit, must be able to protect the circuit more quickly and have better resistance to damage and heat dissipation. At present, the strategies for improving the damage resistance of MOSFET mainly include the following: by increasing the heat dissipation area, such as installing a heat sink to guide the heat generated inside the MOSFET to the top of the MOSFET and transfer it out, reducing the accumulation of heat and thus reducing the risk of burning. Or, using more advanced semiconductor materials, such as gallium nitride (GaN), MOSFETs made of this material have better current carrying capacity than silicon semiconductors. Or, through higher-quality semiconductor materials, higher breakdown voltage and lower current channel impedance are brought, and the heat generated during current flow is reduced from the internal structure of the MOSFET. Or, redundant configuration is performed in the circuit, and two or more MOSFETs are connected in parallel to ensure that the redundant MOSFET can continue to work after one of them is damaged. For example, in a certain AI server, the P54V_EFUSE on the UBB (Universal Baseband Board) adopts a redundant design of two MOSFETs in parallel. Although this design can optimize the problem to a certain extent, the size of the board will become larger, which is inconvenient to use and extremely complicated to test.

[0078] In related technologies, better damage resistance of MOSFET is achieved through redundant design or improvement of material performance. It is necessary to consider how to select and design the MOSFET during design. In larger current scenarios, only larger MOSFETs can be selected.

[0079] As the demand for server performance continues to increase, the number of components that need to be configured during server design is increasing. In many scenarios, requirements are placed on the server size, which limits the scale of the board. On the basis of having planned the necessary components, the server can no longer support too much redundant design. This layout will limit the use of large-specification MOSFETs. At the same time, the costs involved need to be controlled. Redundant design and the selection of other semiconductor materials will incur greater costs, leading to increased economic pressure, design costs and time.

[0080] When designing MOSFET, the impedance of the internal channel is determined by the semiconductor itself. To reduce this impedance, it is necessary to optimize the material, such as using new semiconductor materials with higher electron mobility. However, new semiconductor materials require higher production costs during preparation, are difficult to prepare, and the technology is relatively immature. The material is not widely used, and MOSFETs that use higher-quality semiconductor materials are more expensive.

[0081] The main way to improve heat dissipation is to increase the heat dissipation area by increasing the volume, but on boards with denser layouts and more concentrated devices, increasing the heat dissipation area has greater limitations. In addition, while increasing the heat dissipation area does not improve the current carrying capacity of the MOSFET, other methods are needed to improve short-circuit tolerance, so this method has greater limitations in actual operation.

[0082] In view of this, an embodiment of the present invention provides a field effect transistor control circuit that can improve the damage resistance of the field effect transistor, has a simple structural design, low design cost, small size, and reduced limitations.

[0083] Next, a field effect transistor control circuit provided by an embodiment of the present invention is described in detail. Figure 2 A schematic diagram of a field effect transistor control circuit provided by an embodiment of the present invention, the system includes:

[0084] A first voltage detection circuit 1, a first sampling resistor 2, a current detection circuit 3, a second sampling resistor 4, a calculation circuit 5 and a control circuit 6, wherein:

[0085] The input end of the first voltage detection circuit 1 is connected to the source S of the field effect tube through the first sampling resistor 2, and the output end of the first voltage detection circuit 1 is connected to the input end of the calculation circuit 5; the first voltage detection circuit 1 is used to detect the voltage signal of the source S;

[0086] The input end of the current detection circuit 3 is connected to the source S of the field effect tube through the second sampling resistor 4, and the output end of the current detection circuit 3 is connected to the input end of the calculation circuit 5; the current detection circuit 3 is used to detect the current signal of the source S;

[0087] The output end of the calculation circuit 5 is connected to the input end of the control circuit 6; the calculation circuit 5 is used to obtain the heat information of the field effect tube according to the voltage signal and the current signal;

[0088] The output end of the controller 6 is connected to the gate G of the field effect tube; the controller 6 is used to analyze the heat information using a pre-established heat prediction model, and control the field effect tube to shut down when it is determined that the heat value of the field effect tube at the next moment is greater than the corresponding tolerance threshold.

[0089] It should be noted that, in the embodiments of the present invention, it is considered that the damage of MOSFET is mainly due to the excessive current during short circuit, which instantly generates a large amount of heat inside the MOSFET. This heat cannot be dissipated in time, causing irreversible thermal damage to the MOSFET. When the current is too large, the MOSFET should be turned off immediately to protect the back-end circuit. However, due to the lack of timely control of the MOSFET, there will be a certain lag in the shutdown time, which will cause the MOSFET to withstand a large current for a period of time in the on state, resulting in channel heat accumulation and other damage to the MOSFET. Figure 3 Therefore, in order to solve the problem that MOSFET may be burned due to untimely protection when encountering a large current, in the embodiment of the present invention, a first sampling resistor 2 and a first voltage detection circuit 1 connected to the first sampling resistor 2 may be provided at the source S of the MOSFET, a second sampling resistor 4 connected to the source S of the MOSFET and a current detection circuit 3 connected to the second sampling resistor 4 may be provided, after the field effect tube MOSFET is turned on, the first voltage detection circuit 1 collects the voltage signal of the source S of the MOSFET through the first sampling resistor 2, and then outputs the voltage signal to the calculation circuit 5 connected to the first detection circuit 1, and detects the current signal of the source S of the MOSFET through the current detection circuit, and transmits the current signal to the calculation circuit 5 connected to the current detection circuit The calculation circuit 5 can obtain the heat information of the field effect tube MOSFET according to the received current signal and voltage signal, and then transmit the heat information to the controller 6 connected to the output end of the calculation circuit. The controller 6 has a pre-established heat prediction model stored in it. The received heat information is analyzed by the heat prediction model to determine whether the heat value of the field effect tube at the next moment is greater than the heat tolerance threshold of the field effect tube at the next moment. If it is determined that the heat value of the field effect tube at the next moment is greater than the corresponding tolerance threshold, it means that the heat accumulation of the field effect tube is about to reach the maximum tolerance capacity. At this time, the field effect tube can be controlled to be turned off to prevent the field effect tube from being damaged after the heat of the field effect tube accumulates to the maximum tolerance capacity of the field effect tube after a period of time.

[0090] It should be noted that after collecting the voltage and current of the source of the field effect tube at the current moment, the power P at the current moment can be calculated according to P=U*I, where U is the voltage and I is the current. Then, by integration, the accumulated heat from the field effect tube being turned on to the current moment T as the current changes can be obtained. , where Q represents heat and t represents time.

[0091] In some embodiments, after the field effect transistor MOSFET is turned on, the voltage signal of the MOSFET can be collected in real time through the first voltage detection circuit 1 through the first sampling resistor 2, and the current signal of the MOSFET can be collected in real time through the current detection circuit 3 through the second sampling resistor 4, and the voltage signal and the current signal are output to the calculation circuit 5. The calculation circuit may include a multiplier and an integrator, that is, the power P=U*I at the current moment can be calculated by the multiplier, where U is the voltage and I is the current, and the heat Q at the current moment can be obtained, and then the heat Q accumulated from the turn-on of the MOSFET to the moment T as the current changes can be obtained through integration of the integrator. In practical applications, the standard heat change curve of the field effect tube can be pre-stored in the controller 6, and then the accumulated heat at the current moment is compared with the standard heat at the corresponding moment in the standard heat change curve. If the accumulated heat at the current moment reaches the first percentage (such as 85%) of the standard heat at the corresponding moment in the standard heat change curve, the alarm device can be controlled to issue an alarm prompt so that the staff can understand the operating status of the field effect tube in time. If the accumulated heat at the current moment reaches the second percentage (such as 95%) of the standard heat at the corresponding moment in the standard heat change curve, the field effect tube can be controlled to be shut down to protect the field effect tube. In practical applications, a 5% derating can be reserved, and the field effect tube is protected by monitoring the current and voltage through the circuit in the embodiment of the present invention, wherein the second percentage is greater than the first percentage.

[0092] It should also be noted that in some embodiments, a voltage change curve of the field effect tube from being turned on to the current moment can be established based on the voltage signals collected at different moments, that is, the Vt function of voltage and time t is obtained, and a current change curve of the field effect tube from being turned on to the current moment can be established based on the current signals at different moments, that is, the It function of current and time is obtained, and further based on the voltage change curve and the current change curve, a heat change curve of the field effect tube from being turned on to the current moment is obtained, that is, the function Φ(t) of heat Q and time is obtained, and then based on the heat change curve, the current heat information of the field effect tube at the current moment is determined, and based on the current heat value and the standard heat at the corresponding moment in the standard heat change curve θ(t), it can be determined whether the field effect tube needs to be shut down. Specifically, when the current heat value is greater than the second percentage (such as 95% or 97%, both of which are derating values) of the standard heat at the corresponding moment in the standard heat change curve, the MOSFET can be controlled to be shut down. Among them, the standard temperature rise curve of the MOSFET is as follows Figure 4 shown.

[0093] It is understandable that, since most of the control units inside a single controller are judged by comparators and output by False or True results, the control can only be a linear output, that is, after receiving the data, the data is judged and then the action is executed, and the threshold needs to be set to leave a certain amount of margin, that is, the 3% mentioned above, so that the flow capacity of the entire circuit will be reduced to a certain extent. Therefore, in order to further improve the flow capacity in the embodiment of the present invention, the MOSFET can be actually tested in advance, and the temperature rise curve of the test reaches the current value when it is damaged, and a heat prediction model can be established, and the heat prediction model can be pre-stored in the controller, so that the heat at the next moment can be predicted by the heat at the current moment, so as to protect the MOSFET more accurately and better solve the problem of untimely control of MOSFET shutdown.

[0094] It should be noted that when MOSFET works in the saturation region, a larger current can flow. In the embodiment of the present invention, the MOSFET is controlled to work in the saturation region in order to pass a larger current. The gate voltage Vgate needs to be greater than the threshold voltage Vth of the MOSFET, and the output voltage Vout between the drain and the source (the source is connected to the input in this article) should be greater than the voltage difference between the gate voltage Vgate and the threshold voltage Vth, that is, Vout>Vgate-Vth>0. Among them, the gate voltage in the embodiment of the present invention is a voltage signal applied by the control system to the MOSFET to control the on and off of the field effect tube. The control system sets the gate voltage to increase in proportion to time (that is, Vgate=mt, m is the proportional coefficient, and t is time). The threshold voltage Vth of the MOSFET is the minimum voltage that can drive the field effect tube. The threshold voltage Vth is related to the material and is a constant. The current Iout flowing through the field effect tube is affected by the electron mobility μ of the semiconductor, the temperature T, and the voltage difference between the gate voltage Vgate and the threshold voltage Vth. Since the temperature of the MOSFET usage scene is usually room temperature, the effect of temperature on its current is not considered.

[0095] Then, the current flowing through the field effect tube Iout=K*μ*(Vgate-Vth) (1);

[0096] Among them, K is the compensation coefficient of current. Since the current in MOSFET is generated by the migration of carriers, and this process occurs in the flow channel, it can be inferred that the length and width of the channel will affect the flow capacity, that is, the current size. The smaller the aspect ratio, the more carriers pass through the flow channel, the shorter the time, and the larger the current that can be obtained. Therefore, the compensation coefficient K is related to the aspect ratio of the flow channel of the field effect tube, that is, the compensation coefficient K is proportional to the ratio of the length L of the flow channel to the width D, that is:

[0097] K = n L / D (2);

[0098] Among them, n is the proportionality coefficient, which is a constant.

[0099] Based on equations (1) and (2), we can get the change of output current over time:

[0100] (3);

[0101] In the embodiment of the present invention, for the convenience of description, Vth will be represented by h, that is, h represents the threshold voltage Vth of the MOSFET.

[0102] In some embodiments, the process of establishing the pre-established heat prediction model includes:

[0103] Obtain the mathematical model of the heat rise function of the field effect tube over time;

[0104] The mathematical model of the heat-rise function of heat to time is linearized to obtain a linearized mathematical model of the heat-rise function;

[0105] The linearized mathematical model of the heat rise function in the time domain is converted to the complex frequency domain to obtain the linearized mathematical model of the heat rise function in the complex frequency domain;

[0106] Discretizing the linearized mathematical model of heat rise function in complex frequency domain to obtain a discretized mathematical model of heat rise function;

[0107] The heat transfer function of the field effect tube is obtained by combining the discretized heat rise function mathematical model with the delay coefficient;

[0108] The state space model of the input and output of the field effect tube is obtained through the heat transfer function of the field effect tube;

[0109] Obtain the observation matrix according to the state matrix in the state space model;

[0110] The state space model and the observation matrix are multiplied and the product is transposed to obtain the heat prediction model.

[0111] It should be noted that in the embodiment of the present invention, a mathematical model of the heat rise function of the field effect tube over time can be obtained:

[0112]

[0113] Among them, ρ represents the carrier density, σ represents the drain electron mobility, S represents the current on the drain capacitor and the area of ​​the capacitor layer, L represents the length of the flow channel L, n represents the proportionality coefficient, μ represents the electron mobility, C represents the capacitance value of the drain capacitor C, W represents the width between the two electrodes of the capacitor, D represents the bandwidth D of the flow channel, m represents the proportionality coefficient, A= , A represents the heat rise coefficient.

[0114] The process of establishing the heat prediction model in the embodiment of the present invention can be implemented in the following way:

[0115] Calculate the output voltage Vout between the source and the drain, connect the source to the input, so that the input voltage charges the gate oxide capacitance C (that is, the drain capacitance) on the PN junction of the field effect tube to form the output voltage Vout between the source and the drain, where the drain capacitance C is the capacitance formed by the drain and the oxide layer in the field effect tube. According to the characteristic equation of capacitance, it can be concluded that:

[0116] i=C*du / dt (4);

[0117] Since the current on the drain capacitor is related to the area S of the capacitor layer, the drain electron mobility σ, the carrier density ρ, and the width W between the two electrodes of the capacitor, we can get:

[0118] i=(ρ×S×σ) / W (5;

[0119] From (4) and (5), we can get the output voltage:

[0120] Vout=∫(ρ×σ×S) / (C×W) dt (6);

[0121] After integrating equation (6) from time 0 to time t, we can obtain:

[0122] Vout=(ρ×σ×S) / (C×W)t (7);

[0123] Thus, the heat generated can be obtained (that is, the mathematical model of the heat rise function of the field effect tube over time):

[0124] (8).

[0125] It should be noted that after obtaining the mathematical model of the heat rise function of heat to time, the mathematical model of the heat rise function of heat to time is linearized to obtain a linearized mathematical model of the heat rise function.

[0126] It can be understood that since equation (8) has zeros at t = 0 and t = 1, and the function increases monotonically after t = 1, we take t = 2 to perform Taylor expansion and linearize equation (8) to obtain:

[0127] , , is the derivative of Q at t=2. Thus, the mathematical model of the linearized heat rise function is obtained:

[0128] (9);

[0129] The linearized mathematical model of heat rise function in the time domain is converted to the complex frequency domain to obtain the linearized mathematical model of heat rise function in the complex frequency domain, and the linearized mathematical model of heat rise function in the complex frequency domain is discretized to obtain the discretized mathematical model of heat rise function (that is, the discrete expression of Q(t)):

[0130] (10);

[0131] Where s represents a variable in the complex frequency domain.

[0132] It should be noted that the heat transfer function of the field effect tube can be obtained by combining the discretized heat rise function mathematical model with the delay coefficient. In the embodiment of the present invention, considering the delay between the input time t of the system and the output heat Q of the system, the delay coefficient e^(-at) can be added (where the delay coefficient corresponds to 1 / (s+1) in the complex frequency domain), so that the heat transfer function of the field effect tube can be obtained:

[0133] (11);

[0134] Among them, b=4A(h-4m), b*c=4A(3m-h).

[0135] The state space model φ of the FET input and output can be obtained from the heat transfer function G(s):

[0136] φ= (12);

[0137] Among them, the various matrices in the state space model are obtained by calculation through the heat transfer function:

[0138] State Matrix , the input matrix , the output matrix , directly transfer the matrix ,in, is the control vector (is a vector) and can be ignored.

[0139] By using the state matrix in the state space model The observation matrix E can be obtained.

[0140] Furthermore, the state space model φ is multiplied by the observation matrix E, and the product is transposed to obtain the heat prediction model:

[0141] =(φ·E) T (13);

[0142] Wherein, T represents the transposition operation symbol.

[0143] In practical applications, the calculation circuit can obtain the heat at the current moment through the above-mentioned field effect tube heat to time heat rise function mathematical model, and the heat value at the current moment is input as φ into the heat prediction model to obtain the corresponding output heat. Then, By converting from the complex frequency domain to the time domain, the heat Q (t+1) of the field effect tube at the next moment can be obtained, and then the heat of the field effect tube corresponding to the next moment can be determined from the pre-established standard heat change curve, and the accumulated heat at the current moment can be compared with the standard heat at the next moment in the standard heat change curve. If the accumulated heat at the current moment reaches the first percentage of the standard heat at the corresponding moment in the standard heat change curve (such as 85%), the alarm can be controlled to give an early warning so that the staff can understand the operating status of the field effect tube in time. If the accumulated heat at the current moment reaches the second percentage of the standard heat at the corresponding moment in the standard heat change curve (such as 95%), the field effect tube can be controlled to shut down to protect the field effect tube. The following is a further explanation and introduction to the field effect tube control:

[0144] Please refer to Figure 5 and Figure 6 In some embodiments, the system may further include a second voltage detection circuit 7, a third sampling resistor 8, a processor 9 and an alarm 10, wherein: the input end of the second voltage detection circuit 7 is connected to the drain D of the field effect tube through the third sampling resistor 8, the output end of the second voltage detection circuit 7 is connected to the input end of the processor 9, and the output end of the processor 9 is connected to the alarm 10;

[0145] The second voltage detection circuit 7 is used to detect the drain voltage of the field effect tube;

[0146] The processor 9 is used to obtain the drain current according to the drain voltage, and compare the drain current with the drain current threshold value, and trigger the alarm 10 when the drain current is greater than the drain current threshold value.

[0147] It should be noted that, in order to prevent the drain current from being too large and better protect the field effect tube in the embodiment of the present invention, the third sampling resistor 8 and the second voltage detection circuit 7 (i.e. Figure 6 The voltage collection chip in the MOSFET), the processor 9 and the alarm 10, the second voltage detection circuit 7 collects the drain voltage through the third sampling resistor 8 (which can be a precision resistor), the corresponding drain current is calculated on the processor 9 (such as a personal computer PC), and then the drain current is compared with the nominal drain current (that is, the drain current threshold) in the MOSFET specification book, so as to determine whether the drain is damaged, and issue a warning when the drain current is greater than the drain current threshold.

[0148] In some embodiments, the system may further include a first filter circuit 11 and a second filter circuit 12, wherein the input end of the first filter circuit 11 is connected to an external input signal, and the output end of the first filter circuit 11 is connected to the drain of the field effect transistor; the input end of the second filter circuit 12 is connected to the external input signal, and the output end of the second filter circuit 12 is connected to the source of the field effect transistor;

[0149] The first filter circuit 11 is used for filtering the external input signal and outputting it to the drain of the field effect tube;

[0150] The second filter circuit 12 is used for filtering the external input signal and outputting it to the source of the field effect tube.

[0151] It should be noted that, in order to avoid gate damage caused by source-drain surge voltage or voltage breakdown due to static electricity and excessive gate voltage, the first filter circuit 11 and the second filter circuit 12 can be designed to absorb or limit these two voltages. In practical applications, the first filter circuit 11 and the second filter circuit 12 can both be RC filter circuits composed of resistors and capacitors. The first filter circuit 11 and the second filter circuit 12 absorb voltage spikes, reduce voltage spikes to protect the device, and allow the output voltage after absorbing the peak to enter the drain and source. The specific structures of the first filter circuit 11 and the second filter circuit 12 can be referred to. Figure 7 .

[0152] Although manufacturers will derate the reliability of MOSFETs according to the characteristics of the semiconductor material when producing field-effect tubes to ensure that the MOSFET will not be 100% damaged even after reaching the nominal value in the specification, the tolerance of the MOSFET can still be further improved by increasing heat dissipation measures.

[0153] The measured current and temperature of different specifications are as follows Figure 8 As shown, among which, Fig. 9 It can be seen that when two MOSFETs of different sizes are subjected to a load test at the same current, the temperature rise curve of the large MOSFET is significantly lower than that of the small MOSFET. Due to the size restrictions imposed by the layout and the larger current in the application scenario of the large MOSFET, it is not enough to simply increase the size of the FET to dissipate heat.

[0154] In some embodiments, the system may further include a temperature detection circuit 13, a thermistor 14, a micro pump 15 and a liquid cooling system 16, wherein the input end of the temperature detection circuit 13 is connected to the hole-type semiconductor and electron-type semiconductor junction (i.e., PN junction) of the field effect tube through the thermistor 14, the output end of the temperature detection circuit 13 is connected to the control end of the micro pump 15, the output end of the micro pump 15 is connected to the control end of the liquid cooling system 16, and the liquid cooling system 16 is arranged on the surface of the field effect tube;

[0155] The temperature detection circuit 13 is used to detect the temperature of the hole-type semiconductor and the electron-type semiconductor junction, and control the micro pump to start when the temperature is greater than a preset temperature threshold;

[0156] The micro pump 15 is used to drive the coolant in the liquid cooling system to flow after startup.

[0157] It should be noted that if Fig.10 As shown, in order to further protect the field effect tube, the PN junction of the MOSFET can be connected to the thermistor 14, and the temperature detection circuit 13 determines whether the temperature of the MOSFET is too high by monitoring the resistance change of the thermistor 14 caused by the temperature change of the MOSFET. When the temperature is greater than the preset temperature threshold, it means that the temperature is too high. At this time, the micro pump 15 can be controlled to drive the coolant in the liquid cooling system 16 to flow to dissipate the heat of the field effect tube, thereby improving the heat dissipation capacity.

[0158] That is, the heat dissipation capacity of MOSFET is further optimized in the embodiment of the present invention, and a hierarchical liquid cooling circulation system is designed inside the MOSFET device to further enhance the heat dissipation capacity of MOSFET. The liquid cooling circulation system is divided into a flat part and a vertical part as well as a micro pump and a temperature detection circuit 13.

[0159] The temperature detection circuit 13 monitors the junction temperature t of the PN junction inside the MOS tube through the thermistor 14. When the temperature is higher than the junction temperature characteristic curve of the semiconductor material itself, the micro pump 15 is controlled to start. The micro pump 15 drives the liquid in the liquid cooling system 16 to dissipate heat. The advantage of this is that it can save power consumption and can use the static liquid in the capillary for heat transfer and heat dissipation when the temperature is not high. When the temperature rises too quickly, the flowing liquid can be used for efficient and rapid cooling. The design is simple and the cost is low, which can greatly save costs.

[0160] It should also be noted that in actual applications, a varistor or TVS tube can be connected to the pin where the input voltage needs to be limited to better absorb the surge voltage protection device.

[0161] In some embodiments, the liquid cooling system 16 in the embodiment of the present invention may include a liquid cooling tube, in which coolant is contained, an insulating layer is provided at the bottom of the hole-type semiconductor and electron-type semiconductor junction (i.e., PN junction) in the field effect tube, a first copper foil layer is provided below the insulating layer, a first part of the liquid cooling tube is provided below the first copper foil layer, a second copper foil layer is provided below the first part of the liquid cooling tube, a second part of the liquid cooling tube is provided on the side of the field effect tube, a third copper foil layer is provided on the outside of the second part of the liquid cooling tube, and the outsides of the first copper foil layer, the second copper foil layer and the third copper foil layer are encapsulated in an outer shell.

[0162] It should be noted that Fig.11 From the structure, we can see that the MOSFET package is three-dimensional. An insulating layer can be set at the bottom of the PN junction, and then a layer of thermal conductive interface material (such as the first copper foil layer) can be set below the insulating layer. That is, the first copper foil layer is separated from the PN junction above by the insulating layer. The first copper foil layer is in contact with the liquid cooling tube below. The liquid cooling tube can be a tiny capillary microtube filled with low-boiling-point liquid. The liquid cooling tube is divided into two parts, one is a flat part and the other is a vertical part. Among them, this part extends the bottom flat liquid cooling tube (that is, the flat part) to the side to form the vertical part in the heat dissipation system.

[0163] in, Fig.11 The field oxide in it is a field oxide, which is an insulating layer used to form an isolation area on a semiconductor wafer. It is often used to isolate transistors or other devices to prevent interaction between them. The field oxide layer is formed by local oxidation on a silicon wafer. Gate oxide is a gate oxide, which is a thin layer of oxide located between the gate of the transistor and the semiconductor substrate. The quality and thickness of the gate oxide are related to the performance of the MOSFET. Gate width is the gate width, which refers to the width of the transistor gate. The larger the width, the stronger the current carrying capacity of the transistor is generally. Source conductor is a source conductor, which is a conductive material connected to the source of the transistor, used to transfer current from the source of the transistor to other parts of the circuit. Contact to Source Diffusion is a source diffusion contact, which is a process.

[0164] like Fig.12 As shown, the rectangular part below is the liquid cooling tube laid flat on the bottom, and the cooling liquid flows from thick to thin. Fig.12 This is a schematic diagram of a single liquid cooling tube. In actual use, multiple liquid cooling tubes are used in combination at the bottom, extending upward from the edge of the MOSFET package shell to the Fig.12 The rectangular frame in the middle and upper part is used in combination with the upright part, which is composed of several curved pipes, thereby increasing the contact area and reducing the power consumption of the pump.

[0165] It should be noted that, from the top of the flat part to the highest point, the height is gradually reduced, and an inflection point is set at each layer, so that the height difference of each part of the liquid can be used to attract the liquid downward through the siphon principle through the liquid water level pressure difference. In the flat part at the bottom, the diameter of the pipe can be designed to change from large to small each time it is extended, so that the capillary effect when flowing from a large diameter to a small diameter can be used to guide the liquid, which can further reduce the pressure of the pump and reduce energy consumption.

[0166] In the embodiment of the present invention, the liquid cooling system and the internal structure of the MOSFET are packaged as a whole. The temperature detection circuit 13, thermistor 14, and micro pump 15 can also be set on one side of the MOSFET and packaged inside the shell together, thereby reducing the overall volume.

[0167] Of course, in practical applications, the field effect transistor control circuit provided by the embodiment of the present invention can be packaged as a whole with the field effect transistor for easy use.

[0168] That is, the embodiments of the present invention can improve the heat dissipation capability of MOSFET, making it less susceptible to thermal damage, thereby increasing the service life of the field effect tube. At the same time, the purpose of improving the resistance to thermal damage can be achieved without using more expensive semiconductor materials, thereby significantly saving costs.

[0169] It can be seen that in the embodiment of the present invention, the voltage signal of the source of the field effect tube is detected by the first voltage detection circuit, and the voltage signal is output to the calculation circuit, the current signal of the source of the field effect tube is detected by the current detection circuit, and the current signal is output to the calculation circuit, the calculation circuit processes the voltage signal and the current signal to obtain the thermal information of the field effect tube, and then sends the thermal information to the controller, the controller uses a pre-established thermal prediction model to analyze the thermal information, and obtains the thermal information of the field effect tube at the next moment, and controls the field effect tube to be turned off when the thermal information of the field effect tube at the next moment is greater than the corresponding tolerance threshold; the present invention can turn off the field effect tube before the heat of the field effect tube reaches the maximum thermal damage, thereby improving the damage resistance of the field effect tube, and the present invention has a simple structure, is easy to design, has a low design cost, and is small in size, with reduced limitations.

[0170] It can be understood that the circuit designed by the present invention limits the voltage of each pin of the MOSFET, preventing breakdown caused by excessive voltage, better protecting the MOSFET, and reducing maintenance costs. At the same time, the use of more advanced model predictive control can accurately dissipate heat or shut down the MOSFET before the internal temperature reaches the burnout temperature, allowing the MOSFET to pass a larger current without damaging the device. In addition, the operating status of the MOSFET can be monitored in real time, and an alarm can be issued for faults. Once a device fails, the fault source can be located and replaced in the first time.

[0171] Based on the above embodiments, the present invention provides a field effect tube control method. Fig.13 , the method comprising:

[0172] S110: When the field effect tube is turned on, a voltage signal and a current signal of the source of the field effect tube are collected;

[0173] S120: determining current heat information of the field effect tube according to the voltage signal and the current signal;

[0174] S130: Analyze the current heat information according to the pre-established heat prediction model to obtain the heat information of the field effect tube at the next moment;

[0175] S140: When it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than the tolerance threshold, the field effect tube is controlled to be turned off.

[0176] In some embodiments, determining the current heat information of the field effect tube according to the voltage signal and the current signal includes:

[0177] According to the voltage signal, a voltage change curve of the field effect tube from being turned on to the current moment is established;

[0178] According to the current signal, a current change curve of the field effect tube from being turned on to the current moment is established;

[0179] According to the voltage change curve and the current change curve, the heat change curve of the field effect tube from being turned on to the current moment is obtained;

[0180] According to the heat change curve, the current heat information of the field effect tube at the current moment is determined.

[0181] It should be noted that the field effect transistor control method provided in the embodiment of the present invention has the same beneficial effects as the field effect transistor control circuit provided in the above embodiment, and for the specific introduction of the field effect transistor control circuit involved in the embodiment of the present invention, please refer to the above embodiment, and the present invention will not be repeated here.

[0182] Based on the above embodiments, the present invention provides a field effect tube control device. Fig.14 , the device comprises:

[0183] The acquisition module 21 is used to collect the voltage signal and current signal of the source of the field effect tube when the field effect tube is turned on;

[0184] A determination module 22, used to determine the current heat information of the field effect tube according to the voltage signal and the current signal;

[0185] The analysis module 23 is used to analyze the current heat information according to the pre-established heat prediction model to obtain the heat information of the field effect tube at the next moment;

[0186] The control module 24 is used to control the field effect tube to turn off when it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than the tolerance threshold.

[0187] It should be noted that the field effect transistor control device provided in the embodiment of the present invention has the same beneficial effects as the field effect transistor control method provided in the above embodiment, and for the specific introduction of the field effect transistor control method involved in the embodiment of the present invention, please refer to the above embodiment, and the present invention will not be repeated here.

[0188] On the basis of the above embodiments, the present invention provides a field effect transistor control system on the other hand, including a field effect transistor and the field effect transistor control circuit as described above.

[0189] It should be noted that the field effect transistor provided in the embodiment of the present invention has the same beneficial effects as the field effect transistor control circuit provided in the above embodiment, and for the specific introduction of the field effect transistor control circuit involved in the embodiment of the present invention, please refer to the above embodiment, and the present invention will not be repeated here.

[0190] On the basis of the above embodiments, the present invention provides an electronic device, including:

[0191] Memory for storing computer programs;

[0192] The processor is used to execute the computer program to implement the steps of the field effect transistor control method as described above.

[0193] The electronic device provided in this embodiment may include but is not limited to a smart phone, a tablet computer, a laptop computer or a desktop computer.

[0194] Among them, the processor may include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor may be implemented in at least one hardware form of DSP (Digital Signal Processing), FPGA (Field-Programmable Gate Array), and PLA (Programmable Logic Array). The processor may also include a main processor and a coprocessor. The main processor is a processor for processing data in the awake state, also known as a CPU (Central Processing Unit); the coprocessor is a low-power processor for processing data in the standby state. In some embodiments, the processor may be integrated with a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content to be displayed on the display screen. In some embodiments, the processor may also include an AI (Artificial Intelligence) processor, which is used to process computing operations related to machine learning.

[0195] The memory may include one or more computer-readable storage media, which may be non-transitory. The memory may also include high-speed random access memory, and non-volatile memory, such as one or more disk storage devices, flash memory storage devices. In some embodiments, the memory may be an internal storage unit of an electronic device, such as a hard disk of a server. In other embodiments, the memory may also be an external storage device of an electronic device, such as a plug-in hard disk equipped on a server, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. Further, the memory may also include both an internal storage unit and an external storage device of an electronic device. The memory may be used not only to store application software and various types of data installed in the electronic device, but also to temporarily store data that has been output or is to be output. In this embodiment, the memory is at least used to store the following computer program, wherein, after the computer program is loaded and executed by the processor 21, the relevant steps of the field effect transistor control method disclosed in any of the aforementioned embodiments can be implemented. In addition, the resources stored in the memory may also include an operating system and data, etc., and the storage method may be temporary storage or permanent storage. Among them, the operating system may include Windows, Unix, Linux, etc. The data 203 may include but is not limited to a set offset (data corresponding to the field effect transistor control result) and the like.

[0196] Based on this, an embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above-mentioned field effect transistor control method are implemented.

[0197] The above is a detailed introduction to a field effect transistor control circuit, method, device and electronic device provided by the embodiments of the present invention. The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0198] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0199] The above is a detailed introduction to a field effect transistor control circuit, method, device and electronic device provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A field effect transistor control circuit, characterized in that: include: A first voltage detection circuit, a first sampling resistor, a current detection circuit, a second sampling resistor, a calculation circuit and a control circuit, wherein: The input end of the first voltage detection circuit is connected to the source of the field effect tube through the first sampling resistor, and the output end of the first voltage detection circuit is connected to the input end of the calculation circuit; the first voltage detection circuit is used to detect the voltage signal of the source; The input end of the current detection circuit is connected to the source of the field effect tube through the second sampling resistor, and the output end of the current detection circuit is connected to the input end of the calculation circuit; the current detection circuit is used to detect the current signal of the source; The output end of the calculation circuit is connected to the input end of the control circuit; the calculation circuit is used to obtain the heat information of the field effect tube according to the voltage signal and the current signal; The output end of the controller is connected to the gate of the field effect tube; the controller is used to analyze the heat information using a pre-established heat prediction model, and control the field effect tube to shut down when it is determined that the heat value of the field effect tube at the next moment is greater than the corresponding tolerance threshold.

2. The field effect transistor control circuit according to claim 1, characterized in that: It also includes a second voltage detection circuit, a third sampling resistor, a processor and an alarm, wherein: the input end of the second voltage detection circuit is connected to the drain of the field effect tube through the third sampling resistor, the output end of the second voltage detection circuit is connected to the input end of the processor, and the output end of the processor is connected to the alarm; The second voltage detection circuit is used to detect the drain voltage of the field effect tube; The processor is used to obtain a drain current according to the drain voltage, and compare the drain current with a drain current threshold, and trigger the alarm when the drain current is greater than the drain current threshold.

3. The field effect transistor control circuit according to claim 1, characterized in that: It also includes a first filter circuit and a second filter circuit, wherein the input end of the first filter circuit is connected to an external input signal, and the output end of the first filter circuit is connected to the drain of the field effect tube; the input end of the second filter circuit is connected to the external input signal, and the output end of the second filter circuit is connected to the source of the field effect tube; The first filter circuit is used for filtering the external input signal and outputting it to the drain of the field effect transistor; The second filtering circuit is used for filtering the external input signal and then outputting it to the source of the field effect transistor.

4. The field effect transistor control circuit according to claim 1, characterized in that: It also includes a temperature detection circuit, a thermistor, a micro pump and a liquid cooling system, wherein the input end of the temperature detection circuit is connected to the hole-type semiconductor and the electron-type semiconductor junction of the field effect tube through the thermistor, the output end of the temperature detection circuit is connected to the control end of the micro pump, the output end of the micro pump is connected to the control end of the liquid cooling system, and the liquid cooling system is arranged on the surface of the field effect tube; The temperature detection circuit is used to detect the temperature of the junction of the hole-type semiconductor and the electron-type semiconductor, and control the micro pump to start when the temperature is greater than a preset temperature threshold; The micro pump is used to drive the coolant inside the liquid cooling system to flow after startup.

5. The field effect transistor control circuit according to claim 4, characterized in that: The liquid cooling system includes a liquid cooling tube, in which a coolant is contained, an insulating layer is provided at the bottom of the hole-type semiconductor and electron-type semiconductor junction in the field effect tube, a first copper foil layer is provided below the insulating layer, a first part of the liquid cooling tube is provided below the first copper foil layer, a second copper foil layer is provided below the first part of the liquid cooling tube, a second part of the liquid cooling tube is provided on the side of the field effect tube, a third copper foil layer is provided on the outside of the second part of the liquid cooling tube, and the first copper foil layer, the second copper foil layer and the third copper foil layer are packaged in a shell on the outside.

6. The field effect transistor control circuit according to any one of claims 1 to 5, characterized in that: The process of establishing the pre-established heat prediction model includes: Obtain the mathematical model of the heat rise function of the field effect tube over time; Linearizing the mathematical model of the heat-rise function of heat versus time to obtain a linearized mathematical model of the heat-rise function; Converting the linearized heat rise function mathematical model in the time domain to the complex frequency domain to obtain a linearized heat rise function mathematical model in the complex frequency domain; Discretizing the linearized heat rise function mathematical model in the complex frequency domain to obtain a discretized heat rise function mathematical model; The heat transfer function of the field effect tube is obtained by combining the discretized heat rise function mathematical model with the delay coefficient; Obtaining a state space model of the input and output of the field effect tube through the heat transfer function of the field effect tube; Obtaining an observation matrix according to a state matrix in the state space model; The state space model and the observation matrix are multiplied, and the product is transposed to obtain a heat prediction model.

7. A field effect tube control system, characterized in that: It comprises a field effect tube and a field effect tube control circuit as claimed in any one of claims 1 to 6.

8. A field effect tube control method, characterized in that: include: During the conduction process of the field effect tube, collecting the voltage signal and current signal of the source of the field effect tube; Determining current heat information of the field effect tube according to the voltage signal and the current signal; Analyzing the current heat information according to a pre-established heat prediction model to obtain heat information of the field effect tube at the next moment; When it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than a tolerance threshold, the field effect tube is controlled to be turned off.

9. A field effect tube control device, characterized in that: include: The acquisition module is used to acquire the voltage signal and current signal of the source of the field effect tube during the conduction process of the field effect tube; A determination module, used to determine current heat information of the field effect tube according to the voltage signal and the current signal; An analysis module, used to analyze the current heat information according to a pre-established heat prediction model to obtain the heat information of the field effect tube at the next moment; The control module is used to control the field effect tube to shut down when it is determined according to the heat information that the heat value of the field effect tube at the next moment is greater than the tolerance threshold.

10. An electronic device, characterized in that: include: Memory for storing computer programs; A processor is used to execute the computer program to implement the steps of field effect transistor control as claimed in claim 8.

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