Low-temperature injection type AP plasma treatment device

Abstract

The invention belongs to the technical field of low-temperature plasma, and particularly relates to a low-temperature injection type AP plasma treatment device which comprises a machining table and a silicon wafer material plate arranged on the surface of the machining table and further comprises a low-temperature cleaning assembly arranged on the surface of the machining table. Position movement of the movable frame on the fixed frame is achieved more flexibly, an operator does not need to hold a silicon wafer by hand to clean the surface of a silicon wafer material, meanwhile, it needs to be guaranteed that the silicon wafer is cleaned more evenly, labor input is saved, cleaning efficiency is improved, and under pushing of a hydraulic cylinder, the distance between a plasma cleaning spray head and the silicon wafer can be adjusted, so that cleaning efficiency is improved. The plasma spraying distance can be conveniently adjusted, the surface of a silicon wafer can be better cleaned, the surface of the silicon wafer can be comprehensively cleaned by installing a moving assembly, the use effect is good, a fixing assembly is arranged, a silicon material plate is placed on the surface of a machining table, a clamping plate is tightened downwards under the tension of a spring, and therefore the machining efficiency is improved. And the silicon material plate on the processing table is fixed.

Description

Technical Field

[0001] The invention belongs to the technical field of low-temperature plasma, and in particular relates to a low-temperature jet-type AP plasma processing device. Background Art

[0002] Low-temperature plasma is the fourth state of matter after solid, liquid and gas. When the applied voltage reaches the ignition voltage of the gas, the gas molecules are broken down to produce a mixture of electrons, various ions, atoms and free radicals. Although the temperature of electrons is very high during the discharge process, the temperature of heavy particles is very low, and the entire system is in a low-temperature state, so it is called low-temperature plasma.

[0003] The existing direct-injection atmospheric low-temperature plasma treatment machine sprays low-temperature plasma through the nozzle in front. Since the length of the nozzle is fixed, the distance of the plasma spray cannot be adjusted, resulting in the inability to spray at a long distance. When using a plasma cleaning machine to improve the hydrophilicity of the silicon wafer surface, the operator needs to hold the silicon wafer and use CRF low-temperature plasma to treat the surface of the silicon wafer material. At the same time, it is necessary to ensure that the silicon wafer moves at a uniform speed for the treatment operation. The hand-held operation method is used to treat the silicon wafer surface, which is cumbersome, laborious and difficult to guarantee the treatment effect of the silicon wafer, and the efficiency is low.

[0004] In order to solve the above problems, the present application proposes a low-temperature spray-type AP plasma processing device. Summary of the invention

[0005] In order to solve the problems raised in the above background technology, the present invention provides a low-temperature spray-type AP plasma processing device, which is easy to operate, ensures the cleaning uniformity of the silicon wafer material surface, and improves the hydrophilic effect of the silicon wafer material surface.

[0006] To achieve the above-mentioned object, the present invention provides the following technical solutions: a low-temperature spray-type AP plasma processing device, comprising a processing table and a silicon wafer material plate arranged on the surface of the processing table, and also comprising a low-temperature cleaning component arranged on the surface of the processing table;

[0007] The low-temperature cleaning component includes a fixed frame, a movable frame, a plasma cleaning nozzle, a nozzle head, a slide rail a, a damping slider b, a rack a, a driving motor, a gear a, a connecting pipe and a plasma cleaning machine. The fixed frame is arranged on the surface of the support frame of the processing table, the movable frame is arranged on the surface of the fixed frame, the plasma cleaning nozzle is installed on the surface of the movable frame, the nozzle head is installed on the surface of the plasma cleaning nozzle, the connecting pipe is installed on the surface of the plasma cleaning nozzle, the plasma cleaning machine is installed on the surface of the processing table, and the end of the connecting pipe away from the plasma cleaning nozzle is connected to the plasma cleaning machine. The rack a is installed on the surface of the fixed frame, the driving motor is installed on the surface of the movable frame, one end of the driving motor passes through the movable frame and is connected to the gear a arranged on the bottom surface of the movable frame, the gear a is meshed with the rack a, two slide rails a are symmetrically installed on the surface of the fixed frame, two groups of damping sliders b are symmetrically installed on the surface of the movable frame, the damping sliders b slide on the surface of the slide rails a, the movable frame slides on the surface of the fixed frame through the damping sliders b and the slide rails a, a hydraulic cylinder is installed on the surface of the movable frame, and the output end of the hydraulic cylinder is connected to the plasma cleaning nozzle.

[0008] As a preferred low-temperature injection type AP plasma processing device of the present invention, a mounting frame is installed on the surface of the plasma cleaning nozzle, a damping slider a is installed on the surface of the mounting frame, a clamping strip is symmetrically installed on the surface of the movable frame, and the damping slider a is clamped on the surface of the clamping strip.

[0009] As a preferred embodiment of the low-temperature spray-type AP plasma processing device of the present invention, the clamping bar and the slide rail a are both arranged in an I-shaped structure.

[0010] As a preferred embodiment of the low-temperature injection type AP plasma processing device of the present invention, the nozzle head is threadedly connected to the surface of the plasma cleaning nozzle.

[0011] As a preferred low-temperature spray-type AP plasma processing device of the present invention, a display screen is installed on the surface of the plasma cleaning machine, and a control button is installed on the surface of the plasma cleaning machine below the display screen.

[0012] As a preferred low-temperature injection type AP plasma processing device of the present invention, it also includes a moving component arranged on the surface of the processing table support frame, the moving component includes a rack b, a servo motor and a gear b, the surface of the processing table support frame is symmetrically installed with the rack b, the servo motors are installed at both ends of the concave surface of the fixed frame, the output ends of the servo motors are installed with the gears b, and the gears b are meshingly connected with the rack b.

[0013] As a preferred low-temperature injection type AP plasma processing device of the present invention, the surface of the fixed frame is symmetrically installed with a damping slider c, the surface of the processing table support frame is symmetrically installed with a slide rail b, and the damping slider c slides on the surface of the slide rail b.

[0014] As a preferred low-temperature injection-type AP plasma processing device of the present invention, it also includes a fixing component arranged on the surface of the processing table, and the fixing component includes a clamping plate, a spring and a fixing plate. The clamping plates are arranged in multiple through grooves opened on the surface of the processing table, and multiple springs are installed on the surface of the clamping plates, and one end of the spring is connected to the bottom surface of the processing table.

[0015] As a preferred low-temperature spray-type AP plasma processing device of the present invention, the card plate is arranged in a C-shaped structure.

[0016] As a preferred low-temperature injection-type AP plasma processing device of the present invention, connecting blocks are symmetrically installed on the surface of the card plate, and a stabilizing rod is installed on the surface of the connecting block. The stabilizing rod is inserted into a socket opened on the surface of the processing table, and a fixing plate is installed at one end of the stabilizing rod that passes through the processing table.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] A low-temperature cleaning component is provided on the device. When in use, a fixed frame is provided on the surface of a processing table, and a movable frame is provided on the surface of the fixed frame. A plasma cleaning nozzle is provided on the movable frame, and a nozzle head is provided on the plasma cleaning nozzle, so that the cleaning can be made more uniform. A damping slider b is provided on the surface of the movable frame, and the damping slider b is clamped on the slide rail a installed on the surface of the fixed frame, and the gear a is driven to rotate by starting a driving motor, and the gear a is meshed with the rack a, so that the position of the movable frame on the fixed frame is moved, and the mobile cleaning of the silicon wafer material is realized, which is more flexible and does not require the operator to hold the silicon wafer to clean the surface of the silicon wafer material. At the same time, it is necessary to ensure that the silicon wafer is cleaned more uniformly, save labor input, and improve the cleaning efficiency. Under the push of the hydraulic cylinder, the operating position of the plasma cleaning nozzle can be adjusted, and the distance between the plasma cleaning nozzle and the silicon wafer can be realized, which is convenient for adjusting the distance of the plasma spraying, and can better clean the surface of the silicon wafer.

[0019] And by installing the moving component, firstly, a servo motor is installed on the surface of the fixed frame, and gear b is installed on the surface of the output shaft of the servo motor, the gear b is meshed with the rack b installed on the surface of the support frame of the processing table, and the servo motor is started to drive the fixed frame to move on the surface of the processing table. It is more flexible and convenient to use, and can realize comprehensive cleaning of the silicon wafer surface, and the use effect is good.

[0020] By setting a fixing component on the surface of the processing table, the clamping plate is lifted up during use, and the silicon material plate is placed on the surface of the processing table, and the clamping plate is tightened downward under the tension of the spring to fix the silicon material plate on the processing table, thereby achieving good stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0022] Figure 1 It is a structural schematic diagram of the present invention;

[0023] Figure 2 It is a schematic diagram of the structure of the low-temperature cleaning component in the present invention;

[0024] Figure 3 It is an enlarged view of the structure at A in the present invention;

[0025] Figure 4 It is a structural schematic diagram of the mobile component in the present invention;

[0026] Figure 5 It is the position installation diagram of the servo motor in the present invention;

[0027] Figure 6 It is a structural schematic diagram of the nozzle head in the present invention;

[0028] Figure 7 It is an enlarged view of the structure at B in the present invention;

[0029] Figure 8 It is a structural diagram of the fixing component in the present invention;

[0030] In the figure: 1, processing table; 11, silicon wafer material plate;

[0031] 2. Low temperature cleaning assembly; 21. Fixed frame; 22. Mobile frame; 23. Plasma cleaning nozzle; 24. Nozzle head; 25. Mounting frame; 26. Damping slider a; 27. Card bar; 28. Hydraulic cylinder; 29. ​​Slide rail a; 210. Damping slider b; 211. Rack a; 212. Driving motor; 213. Gear a; 214. Connecting pipe; 215. Plasma cleaning machine; 216. Display screen; 217. Control button;

[0032] 3. Moving assembly; 31. Slide rail b; 32. Rack b; 33. Damping slider c; 34. Servo motor; 35. Gear b;

[0033] 4. Fixing assembly; 41. Clamping plate; 42. Spring; 43. Connecting block; 44. Stabilizing rod; 45. Fixing plate. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] Example 1

[0036] like Figure 1-Figure 8 As shown;

[0037] A low-temperature spray-type AP plasma processing device comprises a processing table 1 and a silicon wafer material plate 11 arranged on the surface of the processing table 1 , and also comprises a low-temperature cleaning component 2 arranged on the surface of the processing table 1 .

[0038] In combination with the above content, the low-temperature cleaning component 2 includes a fixed frame 21, a movable frame 22, a plasma cleaning nozzle 23, a nozzle head 24, a slide rail a29, a damping slider b210, a rack a211, a drive motor 212, a gear a213, a connecting pipe 214 and a plasma cleaning machine 215. The surface of the support frame of the processing table 1 is provided with a fixed frame 21, the surface of the fixed frame 21 is provided with a movable frame 22, the surface of the movable frame 22 is installed with a plasma cleaning nozzle 23, the surface of the plasma cleaning nozzle 23 is installed with a nozzle head 24, the surface of the plasma cleaning nozzle 23 is installed with a connecting pipe 214, the surface of the processing table 1 is installed with a plasma cleaning machine 215, and one end of the connecting pipe 214 away from the plasma cleaning nozzle 23 is connected to the plasma The cleaning machine 215 is connected, a rack a211 is installed on the surface of the fixed frame 21, a driving motor 212 is installed on the surface of the movable frame 22, one end of the driving motor 212 passes through the movable frame 22 and is connected to a gear a213 arranged on the bottom surface of the movable frame 22, the gear a213 is meshed with the rack a211, two slide rails a29 are symmetrically installed on the surface of the fixed frame 21, two groups of damping sliders b210 are symmetrically installed on the surface of the movable frame 22, the damping sliders b210 slide on the surface of the slide rails a29, the movable frame 22 slides on the surface of the fixed frame 21 through the damping sliders b210 and the slide rails a29, a hydraulic cylinder 28 is installed on the surface of the movable frame 22, and the output end of the hydraulic cylinder 28 is connected to the plasma cleaning nozzle 23.

[0039] In this embodiment: by setting a low-temperature cleaning component 2, when in use, by setting a fixed frame 21 on the surface of the processing table 1, and setting a movable frame 22 on the surface of the fixed frame 21, by setting a plasma cleaning nozzle 23 on the movable frame 22, and installing a nozzle head 24 on the plasma cleaning nozzle 23, the cleaning can be made more uniform, and a damping slider b210 is installed on the surface of the movable frame 22, the damping slider b210 is clamped on the slide rail a29 installed on the surface of the fixed frame 21, and the gear a213 is driven to rotate by starting the driving motor 212, and the gear a213 is connected to the slide rail a29 installed on the surface of the fixed frame 21. After the rack a211 is meshed, the position of the movable frame 22 on the fixed frame 21 is moved, and the mobile cleaning of the silicon wafer material is realized, which is more flexible and does not require the operator to hold the silicon wafer to clean the surface of the silicon wafer material. At the same time, it is necessary to ensure that the silicon wafer cleaning is more uniform, save labor input, and improve cleaning efficiency. Under the push of the hydraulic cylinder 28, the operating position of the plasma cleaning nozzle 23 can be adjusted, and the distance between the plasma cleaning nozzle 23 and the silicon wafer can be realized, which is convenient for adjusting the distance of the plasma spray and can better clean the surface of the silicon wafer.

[0040] It should be noted that the clamping strip 27 and the slide rail a29 are both arranged in an I-shaped structure, which plays a limiting role and makes the clamping more stable.

[0041] It should be noted that the nozzle head 24 is threadedly connected to the surface of the plasma cleaning nozzle 23, which makes it easy to replace the nozzle head 24 and more flexible to use.

[0042] It should be noted that an identification probe is installed on the surface of the plasma cleaning nozzle 23 .

[0043] In an optional embodiment, a mounting frame 25 is installed on the surface of the plasma cleaning nozzle 23, a damping slider a26 is installed on the surface of the mounting frame 25, a clamping strip 27 is symmetrically installed on the surface of the movable frame 22, and the damping slider a26 is clamped on the surface of the clamping strip 27.

[0044] In this embodiment: by installing a mounting frame 25 on the surface of the plasma cleaning nozzle 23, and installing damping sliders a26 on both sides of the mounting frame 25, the mounting frame 25 is clamped on the clamping strip 27 installed on the surface of the movable frame 22 through the damping sliders a26, so that the plasma cleaning nozzle 23 can be more stable during the process of adjusting the up and down position, and the use effect is good.

[0045] In an optional embodiment, a display screen 216 is installed on the surface of the plasma cleaning machine 215 , and a control button 217 is installed on the surface of the plasma cleaning machine 215 below the display screen 216 .

[0046] In this embodiment, the hydraulic cylinder 28 and the drive motor 212 can be controlled by operating the control button 217 to drive the position of the plasma cleaning nozzle 23 to perform processing operations, which is more flexible to use.

[0047] It should be noted that the plasma cleaning machine 215 adopts existing mature technology. By inputting the size data of the silicon wafer material into the plasma cleaning machine 215, the plasma cleaning nozzle 23 can be controlled to perform the cleaning operation at the corresponding silicon wafer position.

[0048] In combination with the above content, it also includes a moving component 3 arranged on the surface of the support frame of the processing table 1, and the moving component 3 includes a rack b32, a servo motor 34 and a gear b35. The surface of the support frame of the processing table 1 is symmetrically installed with the rack b32, and the servo motors 34 are installed at both ends of the concave surface of the fixed frame 21. The output ends of the servo motors 34 are installed with gears b35, and the gear b35 is meshed and connected with the rack b32.

[0049] In this embodiment: and by installing the moving component 3, firstly, by installing the servo motor 34 on the surface of the fixed frame 21, and installing the gear b35 on the surface of the output shaft of the servo motor 34, the gear b35 is meshed with the rack b32 installed on the surface of the support frame of the processing table 1, and by starting the servo motor 34, the fixed frame 21 is driven to move on the surface of the processing table 1. It is more flexible and convenient to use, and can achieve comprehensive cleaning of the silicon wafer surface, and the use effect is good.

[0050] In an optional embodiment, damping sliders c33 are symmetrically installed on the surface of the fixing frame 21, and slide rails b31 are symmetrically installed on the surface of the supporting frame of the processing table 1, and the damping sliders c33 slide on the surfaces of the slide rails b31.

[0051] In this embodiment, by installing the damping slider c33 on the surface of the fixing frame 21 and by clamping the damping slider c33 on the surface of the slide rail b31, the stability of the fixing frame 21 during the movement can be improved.

[0052] In combination with the above content, it also includes a fixing component 4 arranged on the surface of the processing table 1, the fixing component 4 includes a clamping plate 41, a spring 42 and a fixing plate 45, and the clamping plates 41 are arranged in the multiple through grooves opened on the surface of the processing table 1, and the surface of the clamping plates 41 is installed with multiple springs 42, and one end of the spring 42 is connected to the bottom surface of the processing table 1

[0053] In this embodiment: in conjunction with the fixing component 4 arranged on the surface of the processing table 1, when in use, the clamping plate 41 is lifted up, and the silicon material plate is placed on the surface of the processing table 1, and the clamping plate 41 is tightened downward under the tension of the spring 42 to fix the silicon material plate on the processing table 1.

[0054] It should be noted that the clamping plate 41 is arranged in a C-shaped structure.

[0055] It should be noted that a protective rubber pad is installed on the surface of the card board 41, which can play a good role in protecting the silicon wafer during the loading process.

[0056] In an optional embodiment, a connecting block 43 is symmetrically installed on the surface of the clamping plate 41, a stabilizing rod 44 is installed on the surface of the connecting block 43, the stabilizing rod 44 is inserted into a socket opened on the surface of the processing table 1, and a fixing plate 45 is installed at one end of the stabilizing rod 44 that passes through the processing table 1.

[0057] In this embodiment: by installing connecting blocks 43 on both sides of the card plate 41, installing a stabilizing rod 44 on the surface of the connecting block 43, and inserting one end of the stabilizing rod 44 into a socket opened on the surface of the processing table 1, the stability of the card plate 41 can be further improved.

[0058] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A low-temperature spray-type AP plasma processing device, comprising a processing table (1) and a silicon wafer material plate (11) arranged on the surface of the processing table (1), characterized in that: It also includes a low-temperature cleaning component (2) arranged on the surface of the processing table (1); The low-temperature cleaning component (2) comprises a fixed frame (21), a movable frame (22), a plasma cleaning nozzle (23), a nozzle head (24), a slide rail a (29), a damping slider b (210), a rack a (211), a driving motor (212), a gear a (213), a connecting pipe (214) and a plasma cleaning machine (215); the surface of the support frame of the processing table (1) is provided with the fixed frame (21); the surface of the movable frame (21) is provided with the The movable frame (22) is provided with the plasma cleaning nozzle (23) on its surface, the nozzle head (24) is provided with the plasma cleaning nozzle (23) on its surface, the connecting pipe (214) is provided with the connecting pipe (214) on its surface, the plasma cleaning machine (215) is provided with the connecting pipe (214) on its surface, the plasma cleaning machine (215) is provided with the connecting pipe (214) at one end away from the plasma cleaning nozzle (23) and connected to the plasma cleaning machine (215). The fixed frame (21) is connected with the rack a (211) on its surface, the driving motor (212) is installed on its surface, one end of the driving motor (212) passes through the moving frame (22) and is connected to the gear a (213) arranged on the bottom surface of the moving frame (22), the gear a (213) is meshed with the rack a (211), and two slide rails a (29) are symmetrically installed on the surface of the fixed frame (21). ), two groups of damping sliders b (210) are symmetrically installed on the surface of the movable frame (22), and the damping sliders b (210) slide on the surface of the slide rail a (29). The movable frame (22) slides on the surface of the fixed frame (21) through the damping sliders b (210) and the slide rail a (29). A hydraulic cylinder (28) is installed on the surface of the movable frame (22), and the output end of the hydraulic cylinder (28) is connected to the plasma cleaning nozzle (23).

2. The low-temperature spray-type AP plasma processing device according to claim 1, characterized in that: A mounting frame (25) is installed on the surface of the plasma cleaning nozzle (23), a damping slider a (26) is installed on the surface of the mounting frame (25), a clamping strip (27) is symmetrically installed on the surface of the moving frame (22), and the damping slider a (26) is clamped on the surface of the clamping strip (27).

3. The low-temperature spray-type AP plasma processing device according to claim 2, characterized in that: The clamping strip (27) and the slide rail a (29) are both arranged in an I-shaped structure.

4. The low-temperature spray-type AP plasma processing device according to claim 1, characterized in that: The nozzle head (24) is threadedly connected to the surface of the plasma cleaning nozzle (23).

5. The low temperature spray type AP plasma processing device according to claim 1, characterized in that: A display screen (216) is installed on the surface of the plasma cleaning machine (215), and a control button (217) is installed on the surface of the plasma cleaning machine (215) below the display screen (216).

6. The low-temperature spray-type AP plasma processing device according to claim 1, characterized in that: The invention also comprises a moving assembly (3) arranged on the surface of the support frame of the processing table (1), the moving assembly (3) comprising a rack b (32), a servo motor (34) and a gear b (35), the rack b (32) being symmetrically mounted on the surface of the support frame of the processing table (1), the servo motor (34) being mounted at both ends of the concave surface of the fixed frame (21), the gear b (35) being mounted at the output end of the servo motor (34), and the gear b (35) being meshedly connected with the rack b (32).

7. The low-temperature spray-type AP plasma processing device according to claim 6, characterized in that: The surface of the fixed frame (21) is symmetrically mounted with a damping slider c (33), and the surface of the support frame of the processing table (1) is symmetrically mounted with a slide rail b (31), and the damping slider c (33) slides on the surface of the slide rail b (31).

8. The low-temperature spray-type AP plasma processing device according to claim 1, characterized in that: It also includes a fixing component (4) arranged on the surface of the processing table (1), the fixing component (4) including a clamping plate (41), a spring (42) and a fixing plate (45), the clamping plates (41) are all arranged in a plurality of through grooves opened on the surface of the processing table (1), a plurality of springs (42) are installed on the surface of the clamping plates (41), and one end of the spring (42) is connected to the bottom surface of the processing table (1).

9. The low-temperature spray-type AP plasma processing device according to claim 8, characterized in that: The clamping plate (41) is arranged in a C-shaped structure.

10. The low-temperature spray-type AP plasma processing device according to claim 8, characterized in that: A connecting block (43) is symmetrically mounted on the surface of the clamping plate (41), a stabilizing rod (44) is mounted on the surface of the connecting block (43), the stabilizing rod (44) is plugged into a socket provided on the surface of the processing table (1), and a fixing plate (45) is mounted on one end of the stabilizing rod (44) that passes through the processing table (1).

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