Normal pressure plasma enhanced chemical vapor deposition coating equipment and coating method

Abstract

The invention relates to normal-pressure plasma enhanced chemical vapor deposition coating equipment which comprises a control mechanism, a feeding atomization mechanism, a heating mechanism, a plasma gun mechanism and a radio-frequency power source. The inlet end of the gas inlet pipe is communicated with an external compressed process gas supply mechanism, the outlet end of the gas inlet pipe is communicated with an inlet of the heating mechanism, the inlet end of the liquid inlet pipe is communicated with an external liquid medicine supply mechanism, the outlet end of the liquid inlet pipe is communicated with the gas inlet pipe, and the pipe diameter of the gas inlet pipe is larger than that of the liquid inlet pipe. And the radio frequency power supply is electrically connected with the plasma gun mechanism. According to the coating equipment, liquid medicine can be continuously conveyed without an injection pump, the structure is simplified, the coating quality is guaranteed, and meanwhile, the situation that sprayed plasma flow contains liquid medicine in a fog drop state is avoided by atomizing the liquid medicine and arranging a serpentine channel in the heating mechanism. The invention also relates to a coating method.

Description

Technical Field

[0001] The present invention relates to the field of film coating equipment, and in particular to a normal pressure plasma enhanced chemical vapor deposition film coating equipment and a film coating method. Background Art

[0002] Plasma enhanced chemical vapor deposition (PECVD) technology uses the gas introduced into a plasma generator to ionize into plasma under the action of high-frequency alternating current and then introduce it into a reaction chamber. The reactants in the reaction chamber undergo cross-linking or polymerization under the action of plasma and are deposited on the surface of the material under the action of airflow to obtain a solid thin film. It has the advantages of low deposition temperature, little effect on the structure and physical properties of the substrate, fast deposition rate, and strong adhesion of the film layer. It can be used to prepare various metal films, inorganic films, and organic films and is widely used in semiconductor manufacturing, solar cells, coating technology, display panels, and other fields.

[0003] Existing PECVD equipment is basically based on a vacuum chamber to achieve the purpose of coating. This method takes a long time to coat, consumes a large amount of gas and liquid medicine, and has high production costs. Therefore, in recent years, a normal-pressure plasma coating method has emerged. For example, Chinese utility model patent CN216514093U discloses a normal-pressure plasma enhanced coating system. During coating, industrial gas is delivered to the plasma gun head, and a plasma generator is started. The industrial gas is ionized in the plasma gun head by high-voltage excitation to generate plasma. At the same time, a heating rod is started to heat the heating chamber, and an injection pump is started. The injection pump will draw the liquid medicine from the medicine tank and deliver it to the plasma gun head. The liquid medicine will contact the plasma in the plasma gun head and be ionized by high voltage. Finally, a nano-hydrophobic film is formed on the surface of the sample as the industrial gas is ejected. However, this technology requires the use of an injection pump to transport the chemical solution into the plasma gun head. The vibration of the injection pump will destroy the molecular structure of the coating, thereby affecting the quality of the coating. In addition, it is difficult for the heating chamber to ensure that the chemical solution is completely vaporized. The plasma flow ejected from the plasma gun head still contains some chemical solution in a droplet state. This part of the chemical solution is directly sprayed on the workpiece surface, affecting the film quality. Summary of the invention

[0004] The object of the present invention is to provide a normal pressure plasma enhanced chemical vapor deposition coating device and a coating method to solve the problems raised in the above background technology.

[0005] In order to solve the above technical problems, on the one hand, the present invention provides a normal-pressure plasma enhanced chemical vapor deposition coating equipment, including a control mechanism, a feed atomization mechanism, a heating mechanism, a plasma gun mechanism and a radio frequency power supply, wherein the control mechanism is respectively controlled and connected with the feed atomization mechanism, the heating mechanism and the radio frequency power supply, the feed atomization mechanism includes a liquid inlet pipe and an air inlet pipe, the inlet end of the air inlet pipe is connected with an external compressed process gas supply mechanism, and the outlet end is connected with the inlet of the heating mechanism, the inlet end of the liquid inlet pipe is connected with an external liquid medicine supply mechanism, and the outlet end is connected with the air inlet pipe, the diameter of the air inlet pipe is larger than the diameter of the liquid inlet pipe, the outlet of the heating mechanism is connected with the plasma gun mechanism, and the radio frequency power supply is electrically connected with the plasma gun mechanism.

[0006] Furthermore, the ratio of the diameter of the air inlet pipe to the diameter of the liquid inlet pipe ranges from 1.5 to 15.

[0007] Furthermore, a control switch and a flow meter are sequentially arranged on the liquid inlet pipe along the direction from the inlet end to the outlet end.

[0008] Furthermore, a ventilation duct is provided in the RF power supply, the inlet end of the ventilation duct is connected to the external compressed process gas supply mechanism, the outlet end of the ventilation duct is connected to the inlet end of the air inlet pipe, and the flow of the air inlet pipe is controlled by the RF power supply.

[0009] Furthermore, the heating mechanism comprises a heating cavity, and at least two partition baffles are arranged inside the heating cavity, and the partition baffles form a serpentine channel inside the heating cavity.

[0010] Furthermore, a plurality of heating elements are arranged inside the heating cavity, and a temperature sensor is also arranged on the heating cavity.

[0011] Furthermore, the plasma gun mechanism is flat or cylindrical.

[0012] Furthermore, the plasma gun mechanism includes a connecting part, a main body and a nozzle which are connected in sequence from top to bottom; a through hole is provided in the connecting part, an ionization channel is formed in the main body, the top of the through hole is connected to the outlet of the heating mechanism through a connecting tube, and the bottom of the through hole is connected to the ionization channel; at least one of the connecting part and the connecting tube is an insulator.

[0013] Furthermore, the connection between the connecting portion and the main body portion, and between the main body portion and the nozzle are all detachably connected.

[0014] Furthermore, the main body includes a negative electrode and a positive electrode located inside the negative electrode, the negative electrode and the positive electrode are respectively connected to a radio frequency power supply, the ionization channel is formed between the inner surface of the negative electrode and the outer surface of the positive electrode, the top of the positive electrode is provided with a cavity connected to the through hole, and a plurality of connecting holes connecting the cavity and the ionization channel are provided on the cavity wall.

[0015] On the other hand, the present invention further provides a coating method using the atmospheric pressure plasma enhanced chemical vapor deposition coating device described in any of the above embodiments, the coating method comprising the following steps:

[0016] S1, the control mechanism controls the feed atomization mechanism, the heating mechanism, and the radio frequency power supply to start;

[0017] S2, high-pressure process gas is introduced into the air inlet pipe, liquid medicine is introduced into the liquid inlet pipe, and the liquid medicine enters the air inlet pipe, and the high-pressure process gas disperses and atomizes the liquid medicine into small droplets;

[0018] S3, the process gas drives the small droplets into the heating mechanism for heating, and the small droplets absorb the heat in the heating mechanism to vaporize;

[0019] S4, the vaporized liquid medicine and the process gas enter the plasma gun mechanism together, and the vaporized liquid medicine and the process gas are ionized into plasma;

[0020] S5. Plasma is ejected from the plasma gun mechanism and undergoes a chemical reaction to form new substances that adhere to the surface of the substrate to be coated. The coating equipment is driven to move by an external moving mechanism to achieve coating on the surface of the substrate to be coated.

[0021] The beneficial effects of the present invention are as follows:

[0022] (1) The overall size of the coating equipment is small and flexible to use. It can be moved by an external moving mechanism and can be used to coat any surface, with a wide range of applications;

[0023] (2) By setting a connected air inlet pipe and a liquid inlet pipe in the feed atomization mechanism, and passing a large flow of compressed process gas into the air inlet pipe and a small flow of chemical monomer liquid into the liquid inlet pipe, due to the rapid flow of high-pressure process gas in the air inlet pipe, a low pressure will be formed at the outlet end of the liquid inlet pipe, so that the liquid in the liquid inlet pipe continuously enters the air inlet pipe, and a small amount of liquid enters a large amount of high-pressure process gas, and the high-pressure process gas disperses and atomizes the liquid into small droplets; through such a setting, the liquid can be continuously transported without setting an injection pump, the structure is simplified and the vibration of the injection pump can be effectively avoided to cause the molecular structure of the coating to be destroyed, thereby ensuring the quality of the coating, and the liquid can be atomized at the same time, so that the atomized liquid is more easily vaporized in the heating mechanism, reducing the situation where the plasma flow ejected from the plasma gun mechanism contains liquid in a mist state;

[0024] (3) A serpentine channel is formed in the heating mechanism. When the high-pressure process gas drives the small droplets of the drug liquid to enter the heating chamber from the inlet, they flow along the serpentine channel and finally flow out of the heating chamber from the outlet. Such a configuration can, on the one hand, extend the running time of the process gas and the small droplets of the drug liquid in the heating chamber, so that the small droplets of the drug liquid can be fully heated in the heating chamber, thereby ensuring that the small droplets of the drug liquid can be fully vaporized; on the other hand, the first channel near the inlet is located at the bottom of the heating chamber, so that the process gas and the small droplets of the drug liquid can pass smoothly, and the second channel near the outlet is located at the top of the heating chamber. When the small droplets of the drug liquid are not vaporized, they cannot rise to the second channel, that is, they cannot climb over the partition baffle near the outlet position. Therefore, only the vaporized drug liquid can enter the plasma gun mechanism through the second channel, and the unvaporized drug liquid remains in the heating chamber, thereby preventing the plasma flow ejected from the plasma gun mechanism from containing the drug liquid in a mist state;

[0025] (4) The main body and the nozzle are detachably connected. When the nozzle is installed, the opening of the plasma gun mechanism is smaller to meet the coating requirements. When the nozzle is removed, the opening of the plasma gun mechanism is larger to meet the cleaning requirements, thereby achieving flexible use. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic structural diagram of the atmospheric pressure plasma enhanced chemical vapor deposition coating equipment of the present invention.

[0027] Figure 2 It is a structural schematic diagram of another embodiment of the atmospheric pressure plasma enhanced chemical vapor deposition coating equipment of the present invention.

[0028] Figure 3 It is a cross-sectional schematic diagram of the atmospheric pressure plasma enhanced chemical vapor deposition coating equipment of the present invention.

[0029] Figure 4 It is a structural schematic diagram of the plasma gun mechanism of the present invention.

[0030] Description of reference numerals:

[0031] 1-feed atomization mechanism; 11-liquid inlet pipe; 12-control switch; 13-flow meter; 14-air inlet pipe; 15-fixed block; 2-heating mechanism; 21-heating chamber; 22-partition baffle; 23-inlet; 24-outlet; 25-heating element; 26-temperature sensor; 3-plasma gun mechanism; 31-connecting part; 311-through hole; 32-main body; 321-negative electrode; 322-positive electrode; 323-ionization channel; 324-cavity; 325-connecting hole; 33-nozzle; 34-ionization channel; 35-connecting hole; 4-connecting pipe. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of those skilled in the art, the present invention is further described below in conjunction with embodiments and drawings. The contents mentioned in the implementation modes are not intended to limit the present invention.

[0033] Example 1

[0034] like Figures 1 to 4 As shown, a normal-pressure plasma enhanced chemical vapor deposition coating device provided by the present invention includes a control mechanism, a feed atomization mechanism 1, a heating mechanism 2, a plasma gun mechanism 3 and a radio frequency power supply. The control mechanism is respectively controlled and connected with the feed atomization mechanism 1, the heating mechanism 2 and the radio frequency power supply. The feed atomization mechanism 1 includes a liquid inlet pipe 11 and an air inlet pipe 14. The inlet end of the air inlet pipe 14 is connected with an external compressed process gas supply mechanism, and the outlet end is connected with the inlet of the heating mechanism 2. The inlet end of the liquid inlet pipe 11 is connected with an external liquid medicine supply mechanism, and the outlet end is connected with the air inlet pipe 14. The diameter of the air inlet pipe 14 is larger than the diameter of the liquid inlet pipe 11. The outlet of the heating mechanism 2 is connected with the plasma gun mechanism 3, and the radio frequency power supply is electrically connected with the plasma gun mechanism 3. Specifically, it also includes a fixing block 15, in which a first through hole for accommodating the air inlet pipe 14 and a second hole for accommodating the liquid inlet pipe 11 are provided, the first through hole and the second hole are arranged at an acute angle and the second hole is connected to the first through hole, and the fixed installation between the air inlet pipe 14 and the liquid inlet pipe 11 is achieved by the fixing block 15.

[0035] In actual use, an external compressed process gas supply mechanism supplies compressed process gas to the air inlet pipe 14, and controls the flow rate of the process gas through a control mechanism, and the pressure of the compressed process gas reaches 0.6-0.8 MPa, wherein the process gas is helium, argon, oxygen, nitrogen or air, etc., and a suitable process gas is selected according to the actual needs in the coating process, and an external liquid supply mechanism supplies chemical monomer liquid for coating reaction to the liquid inlet pipe 11, and controls the flow rate of the liquid liquid through a control mechanism; due to the rapid flow of high-pressure process gas in the air inlet pipe 14, a low pressure is formed at the outlet end of the liquid inlet pipe 11, thereby driving the liquid in the liquid inlet pipe 11 to continuously enter the air inlet pipe 14; and because the diameter of the air inlet pipe 14 is larger than the diameter of the liquid inlet pipe 11, a large flow of high-pressure process gas continuously flows in the air inlet pipe 14, and a large flow of high-pressure process gas continuously flows in the liquid inlet pipe 11. A small flow of liquid medicine flows continuously, and a small amount of liquid medicine enters a large amount of high-pressure process gas. The high-pressure process gas disperses and atomizes the liquid medicine into small droplets, and the high-pressure process gas drives the small droplets to enter the heating mechanism 2 for heating. The small droplets absorb heat in the heating mechanism 2 and vaporize. The vaporized liquid medicine and the process gas enter the plasma gun mechanism 3 together. Under the action of the alternating electric field, the vaporized liquid medicine and the process gas are ionized into plasma. Plasma is a collection of particles and groups such as positive ions, negative ions, excited atoms or molecules, ground atoms or molecules and free radicals. The plasma reacts chemically with each other or with other surrounding substances, and is ejected from the plasma gun mechanism to form a new substance and adhere to the surface of the substrate. The coating equipment in this embodiment is driven to move by an external moving mechanism, so that coating can be performed at a specific position on the surface of the substrate.

[0036] In this embodiment, an air inlet pipe 14 and a liquid inlet pipe 11 are connected to each other in the feed atomization mechanism 1, and a large flow of compressed process gas is introduced into the air inlet pipe 14, and a small flow of chemical monomer liquid is introduced into the liquid inlet pipe 11. Due to the rapid flow of the high-pressure process gas in the air inlet pipe 14, a low pressure is formed at the outlet end of the liquid inlet pipe 11, so that the liquid in the liquid inlet pipe 11 continuously enters the air inlet pipe 14, and a small amount of liquid enters a large amount of high-pressure process gas, and the high-pressure process gas disperses and atomizes the liquid into small droplets. Through such an arrangement, the liquid can be continuously transported without setting up an injection pump, the structure is simplified, and the vibration of the injection pump can be effectively avoided to effectively avoid the destruction of the molecular structure in the coating, thereby ensuring the quality of the coating, and the liquid can also be atomized at the same time, so that the atomized liquid is more easily vaporized in the heating mechanism 2, reducing the occurrence of the plasma flow ejected from the plasma gun mechanism 3 containing liquid in a mist state. Moreover, the coating device in the present invention has a small overall size and is flexible to use. It can be moved by an external moving mechanism and can be used to coat any surface, thus having a wide range of applications.

[0037] More specifically, Figure 1-3 As shown, the ratio of the diameter of the air inlet pipe 14 to the diameter of the liquid inlet pipe 11 is in the range of 1.5 to 15; preferably, the ratio of the diameter of the air inlet pipe 14 to the diameter of the liquid inlet pipe 11 is in the range of 3 to 9. In this embodiment, by setting the diameter ratio between the air inlet pipe 14 and the liquid inlet pipe 11, on the one hand, it is ensured that the input amount of the liquid medicine can meet the film forming requirements, and on the other hand, it is ensured that the liquid medicine is fully atomized in the air inlet pipe 14.

[0038] More specifically, Figure 1-3 As shown, the liquid inlet pipe 11 is provided with a control switch 12 and a flow meter 13 in sequence along the direction from the inlet end to the outlet end. Specifically, the control switch 12 and the flow meter 13 are respectively connected to the control mechanism. In this embodiment, the control switch 12 controls whether the liquid medicine is introduced into the liquid inlet pipe 11, and the flow meter 13 controls the flow rate of the liquid medicine in the liquid inlet pipe 11.

[0039] More specifically, a ventilation duct is provided in the RF power supply, the inlet end of the ventilation duct is connected to the external compressed process gas supply mechanism, the outlet end of the ventilation duct is connected to the inlet end of the air inlet pipe 14, and the flow of the air inlet pipe 14 is controlled by the RF power supply.

[0040] More specifically, Figure 3As shown, the heating mechanism 2 includes a heating cavity 21 , and at least two partition baffles 22 are arranged inside the heating cavity 21 . The partition baffles 22 form a serpentine channel inside the heating cavity 21 . Specifically, an inlet 23 is provided at the upper end of one side of the heating chamber 21, and an outlet 24 is provided at the lower end of the other side. The inlet 23 is connected to the outlet end of the air inlet pipe 14, and the outlet 24 is connected to the plasma gun mechanism 3. Two partition baffles 22 are provided, one of which is arranged near the inlet 23, and the upper end of the partition baffle 22 is connected to the upper inner wall of the heating chamber 21, and the lower end forms a first channel between the lower end and the lower inner wall of the heating chamber 21, and the other partition baffle 22 is arranged near the outlet 24, and the lower end of the other partition baffle 22 is connected to the lower inner wall of the heating chamber 21, and the upper end forms a second channel between the upper inner wall of the heating chamber 21, thereby forming a serpentine channel in the heating chamber 21. When the high-pressure process gas drives the small droplets of liquid medicine into the heating chamber 21 from the inlet 23, it flows along the serpentine channel and finally flows out from the outlet 24. The heating chamber 21 is configured such that, on the one hand, the running time of the process gas and the small droplets of the medicinal liquid in the heating chamber 21 can be prolonged, so that the small droplets of the medicinal liquid can be fully heated in the heating chamber 21, thereby ensuring that the small droplets of the medicinal liquid can be fully vaporized; on the other hand, the first channel near the inlet 23 is located at the bottom of the heating chamber 21, so that the process gas and the small droplets of the medicinal liquid can pass smoothly, and the second channel near the outlet 24 is located at the top of the heating chamber 21. When the small droplets of the medicinal liquid are not vaporized, they cannot rise to the second channel, that is, they cannot climb over the partition baffle 22 near the outlet 24. Therefore, only the vaporized medicinal liquid can enter the plasma gun mechanism 3 through the second channel, and the medicinal liquid that is not vaporized remains in the heating chamber 21, thereby preventing the plasma flow ejected from the plasma gun mechanism 3 from containing the medicinal liquid in a mist state.

[0041] More specifically, Figure 3 As shown, a plurality of heating elements 25 are arranged inside the heating cavity 21, and a temperature sensor 26 is also arranged on the heating cavity 21. Specifically, the heating element is a resistance heating element, and its two ends are respectively fixed on the upper and lower inner walls of the heating cavity 21, and the temperature sensor 26 is arranged on the cavity wall of the heating cavity 21, and is used to detect the temperature of the heating cavity 21 in real time; the heating element 25 and the temperature sensor 26 are both connected to the control mechanism, so that the temperature of the heating cavity 21 can be accurately controlled.

[0042] More specifically, Figure 1-2As shown, the plasma gun mechanism 3 is flat or cylindrical, wherein the cylindrical shape is specifically a cylindrical shape. When the plasma gun mechanism 3 is cylindrical, driven by an external moving mechanism, the plasma gun mechanism 3 can form a linear coating layer on the surface of the substrate to be coated; when the plasma gun mechanism 3 is flat, driven by an external moving mechanism, the plasma gun mechanism 3 can form a planar coating layer on the surface of the substrate to be coated; in this way, by setting plasma gun mechanisms 3 of different shapes, different coating requirements can be met.

[0043] More specifically, Figure 3-4 As shown, the plasma gun mechanism 3 includes a connecting portion 31, a main body 32 and a nozzle 33 which are sequentially connected from top to bottom; a through hole 311 is provided in the connecting portion 31, an ionization channel 323 is formed in the main body 32, the top of the through hole 311 is connected to the outlet of the heating mechanism 2 through a connecting pipe 4, and the bottom of the through hole 311 is connected to the ionization channel 323; at least one of the connecting portion 31 and the connecting pipe 4 is an insulator. Preferably, both the connecting portion 31 and the connecting pipe 4 are insulators. In actual use, the vaporized liquid medicine and the process gas come out of the heating mechanism 2, pass through the connecting pipe 4 and the connecting portion 31 in sequence, and then enter the ionization channel 323, undergo ionization reaction, form plasma, and finally spray out from the nozzle 33 to the surface of the substrate to be coated.

[0044] More specifically, Figure 3-4 As shown, the connection between the connecting portion 31 and the main body 32, and between the main body 32 and the nozzle 33 are all detachably connected. Specifically, the detachable connection adopts a detachable connection method such as a snap connection and a threaded connection. In this embodiment, since the materials of the connecting portion 31 and the main body 32 are different, the two are set to be detachably connected, which is convenient for production and manufacturing; and since the coating equipment needs to be cleaned regularly, the RF power supply is first disconnected during cleaning, and a large amount of high-pressure gas is introduced into the coating equipment. At this time, a larger opening needs to be set in the plasma gun mechanism, so that impurities in the coating equipment can be taken out during the operation of the high-pressure gas to achieve the purpose of cleaning. However, the opening of the plasma gun mechanism required in the plasma coating process is small. Therefore, in order to meet different opening requirements, the main body 32 and the nozzle 33 are set to be detachably connected. When the nozzle 33 is installed, the opening of the plasma gun mechanism is small to meet the coating requirements. When the nozzle 33 is removed, the opening of the plasma gun mechanism is large to meet the cleaning requirements.

[0045] More specifically, Figure 4As shown, the main body 32 includes a negative electrode 321 and a positive electrode 322 located inside the negative electrode 321, the negative electrode 321 and the positive electrode 322 are respectively connected to the radio frequency power supply, the ionization channel 323 is formed between the inner surface of the negative electrode 321 and the outer surface of the positive electrode 322, the top of the positive electrode 322 is provided with a cavity 324 connected to the through hole 311, and the cavity wall of the cavity 324 is provided with a plurality of connecting holes 325 connecting the cavity 324 and the ionization channel 323. In this embodiment, the cavity 324 and the connecting hole 325 are provided to facilitate the connection between the through hole 311 and the ionization channel 323.

[0046] Example 2

[0047] On the basis of Example 1, the present invention further provides a coating method using any of the atmospheric pressure plasma enhanced chemical vapor deposition coating equipment described in Example 1, the coating method comprising the following steps:

[0048] S1, the control mechanism controls the feed atomization mechanism 1, the heating mechanism 2, and the radio frequency power supply to start;

[0049] S2, high-pressure process gas is introduced into the air inlet pipe 14, liquid medicine is introduced into the liquid inlet pipe 11, and the liquid medicine enters the air inlet pipe 14, and the high-pressure process gas disperses and atomizes the liquid medicine into small droplets;

[0050] S3, the process gas drives the small droplets into the heating mechanism 2 for heating, and the small droplets absorb heat in the heating mechanism 2 to vaporize;

[0051] S4, the vaporized liquid medicine and the process gas enter the plasma gun mechanism 3 together, and the vaporized liquid medicine and the process gas are ionized into plasma;

[0052] S5. Plasma is ejected from the plasma gun mechanism and undergoes a chemical reaction to form new substances that adhere to the surface of the substrate to be coated. The coating equipment is driven to move by an external moving mechanism to achieve coating on the surface of the substrate to be coated.

[0053] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A normal pressure plasma enhanced chemical vapor deposition coating equipment, characterized in that: The invention comprises a control mechanism, a feed atomization mechanism (1), a heating mechanism (2), a plasma gun mechanism (3) and a radio frequency power supply, wherein the control mechanism is respectively connected to the feed atomization mechanism (1), the heating mechanism (2) and the radio frequency power supply; the characteristic is that the feed atomization mechanism (1) comprises a liquid inlet pipe (11) and an air inlet pipe (14), the inlet end of the air inlet pipe (14) is connected to an external compressed process gas supply mechanism, and the outlet end is connected to the inlet of the heating mechanism (2); the inlet end of the liquid inlet pipe (11) is connected to an external liquid medicine supply mechanism, and the outlet end is connected to the air inlet pipe (14); the diameter of the air inlet pipe (14) is larger than the diameter of the liquid inlet pipe (11); the outlet of the heating mechanism (2) is connected to the plasma gun mechanism (3); and the radio frequency power supply is electrically connected to the plasma gun mechanism (3).

2. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The ratio between the diameter of the air inlet pipe (14) and the diameter of the liquid inlet pipe (11) is in the range of 1.5 to 15.

3. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The liquid inlet pipe (11) is provided with a control switch (12) and a flow meter (13) in sequence along the direction from the inlet end to the outlet end.

4. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The RF power source is provided with a ventilation duct, the inlet end of the ventilation duct is connected to the external compressed process gas supply mechanism, the outlet end of the ventilation duct is connected to the inlet end of the air inlet pipe (14), and the flow of the air inlet pipe (14) is controlled by the RF power source.

5. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The heating mechanism (2) comprises a heating cavity (21), at least two partition baffles (22) are arranged inside the heating cavity (21), and the partition baffles (22) form a serpentine channel inside the heating cavity (21); a plurality of heating elements (25) are arranged inside the heating cavity (21), and a temperature sensor (26) is also arranged on the heating cavity (21).

6. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The plasma gun mechanism (3) is flat or cylindrical.

7. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 1, characterized in that: The plasma gun mechanism (3) comprises a connecting portion (31), a main body (32) and a nozzle (33) which are connected in sequence from top to bottom; a through hole (311) is provided in the connecting portion (31), an ionization channel (323) is formed in the main body (32), the top of the through hole (311) is connected to the outlet of the heating mechanism (2) through a connecting pipe (4), and the bottom of the through hole (311) is connected to the ionization channel (323); at least one of the connecting portion (31) and the connecting pipe (4) is an insulator.

8. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 7, characterized in that: The connection between the connecting portion (31) and the main body (32), as well as the connection between the main body (32) and the nozzle (33) are all detachably connected.

9. The atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to claim 7 or 8, characterized in that: The main body (32) comprises a negative electrode (321) and a positive electrode (322) located inside the negative electrode (321); the negative electrode (321) and the positive electrode (322) are respectively connected to a radio frequency power source; the ionization channel (323) is formed between the inner surface of the negative electrode (321) and the outer surface of the positive electrode (322); a cavity (324) communicating with the through hole (311) is provided at the top of the positive electrode (322); and a plurality of connecting holes (325) connecting the cavity (324) and the ionization channel (323) are provided on the cavity wall of the cavity (324).

10. A coating method using the atmospheric pressure plasma enhanced chemical vapor deposition coating equipment according to any one of claims 1 to 9, characterized in that: The coating method comprises the following steps: S1, the control mechanism controls the feed atomization mechanism (1), the heating mechanism (2), and the radio frequency power supply to start; S2, a high-pressure process gas is introduced into the air inlet pipe (14), a liquid medicine is introduced into the liquid inlet pipe (11), and the liquid medicine enters the air inlet pipe (14), and the high-pressure process gas disperses and atomizes the liquid medicine into small droplets; S3, the process gas drives the small liquid droplets into the heating mechanism (2) for heating, and the small liquid droplets absorb heat in the heating mechanism (2) and evaporate; S4, the vaporized liquid medicine and the process gas enter the plasma gun mechanism (3), and the vaporized liquid medicine and the process gas are ionized into plasma; S5. Plasma is ejected from the plasma gun mechanism and undergoes a chemical reaction to form new substances that adhere to the surface of the substrate to be coated. The coating equipment is driven to move by an external moving mechanism to achieve coating on the surface of the substrate to be coated.

Images