Monitoring device capable of determining characteristics of

Abstract

A monitoring device capable of determining characteristics of an edge region and a method of manufacturing the same are disclosed. The monitoring device includes a lower cover, a guide portion arranged on the lower cover, a circuit module on which at least one electronic component is arranged, and an upper cover arranged on the guide portion and the circuit module. Wherein the guide part is provided with a space, and the circuit modules are arranged in the space.

Description

Technical Field

[0001] The present invention relates to a monitoring device capable of measuring the characteristics of a peripheral region of a diagnosed body and a method for manufacturing the same. Background Art

[0002] Electrostatic chucks are core components in semiconductor devices. The temperature of such electrostatic chucks rises and falls in each process, and the resistance component of the internal heating electrode changes, which may cause the temperature uniformity to deviate.

[0003] In addition, the deviation of the inclination of the electrostatic chuck that may occur during the replacement of the electrostatic chuck may affect the distribution of plasma. In addition, the change of the electrical composition of the internal electrode of the electrostatic chuck may affect the electrostatic force, or the vibration of the semiconductor device may affect the engineering results.

[0004] When the electrostatic chuck is in a state where the desired temperature or temperature distribution is not formed, the electrostatic force is not constant, the semiconductor device itself is vibrating, or the electrostatic chuck or shower head is deviated, when performing semiconductor engineering or display engineering, especially when performing etching engineering, defects may occur in the wafer, which may lead to a serious problem that all wafers have to be discarded.

[0005] Therefore, there are some methods that can measure the characteristics of electrostatic chucks, such as Figure 1 The monitoring device is a structure in which components 102 such as sensors are arranged in the inner space of a hollow wafer 100. In this structure, the sensor cannot measure the characteristics of the edge area of ​​the electrostatic chuck due to the side surface of the wafer 100. Summary of the invention

[0006] Technical issues to be solved

[0007] The present invention provides a monitoring device capable of measuring the characteristics of a peripheral region of a diagnosed object and a method for manufacturing the same.

[0008] Technical Solution

[0009] In order to achieve the above-mentioned purpose, a monitoring device according to an embodiment of the present invention comprises: a lower cover; a guide portion arranged on the lower cover; a circuit module having at least one electronic component arranged on the upper part of a circuit board; and an upper cover arranged on the guide portion and the circuit module. A space is formed in the guide portion, and the circuit module is arranged in the space.

[0010] A monitoring device according to another embodiment of the present invention comprises: a lower cover; a circuit module arranged on the lower cover; components arranged on the circuit module; and an upper cover arranged on the components. The components include a first component with a relatively low height and a second component with a relatively high height, and by filling a filler on the first component, the first component filled with the filler and the second component have the same height.

[0011] A monitoring device according to another embodiment of the present invention comprises: a lower cover; a circuit module arranged on the lower cover; at least one electronic component arranged on the circuit module; and an upper cover arranged on the electronic component. The sensor as the electronic component is arranged on an area of ​​the circuit module corresponding to the extreme edge area of ​​the wafer used in the project.

[0012] According to one embodiment of the present invention, a method for manufacturing a monitoring device includes: a step of arranging a circuit board on a lower cover; a step of arranging a first component with a relatively low height and a second component with a relatively high height on the circuit board; a step of filling a filler on the first component so that the filler has the same height as the second component; and a step of arranging an upper cover on the first component and the second component.

[0013] In the monitoring device and the manufacturing method thereof according to the present invention, the sensor can be arranged in a region corresponding to the limit edge region of a wafer used for a subsequent process, so the monitoring device can measure the characteristics of the edge region of the diagnosed object. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a diagram illustrating existing monitoring equipment;

[0015] Figure 2 is a diagram illustrating an arrangement of monitoring devices according to an embodiment of the present invention;

[0016] Figure 3 is an exploded view illustrating the structure of a monitoring device according to one embodiment of the present invention;

[0017] Figure 4 and Figure 5 is a diagram illustrating an arrangement of monitoring devices according to an embodiment of the present invention;

[0018] Figure 6 is a diagram illustrating a guide member and a circuit board according to one embodiment of the present invention;

[0019] Figure 7 is a diagram illustrating a component coupling structure of a monitoring device according to an embodiment of the present invention;

[0020] Figure 8is a diagram illustrating an arrangement process of electronic components according to one embodiment of the present invention;

[0021] Fig. 9 is a diagram illustrating a portion of a monitoring device according to another embodiment of the present invention;

[0022] Fig.10 is an exploded view illustrating the structure of a monitoring device according to another embodiment of the present invention;

[0023] Fig.11 is a diagram illustrating an arrangement of a guide member and a circuit module according to an embodiment of the present invention. DETAILED DESCRIPTION

[0024] Unless otherwise clearly indicated in the context, the singular expressions used in this specification include the plural expressions. In this specification, the terms "consisting of" or "including" should not be interpreted as necessarily including each constituent element or each step recorded in the specification, but should be interpreted as some of the constituent elements or some of the steps may not be included, or may further include additional constituent elements or steps. In addition, the terms "... part", "module" and the like recorded in the specification refer to a unit that processes at least one function or action, which can be implemented by hardware or software, or by a combination of hardware and software.

[0025] The present invention relates to a monitoring device, which can measure the temperature distribution of a diagnosed object (e.g., an electrostatic chuck) in semiconductor engineering or display engineering to determine the abnormal state of the electrostatic chuck. For example, the state of RF voltage, current, or power can be measured under the plasma state of semiconductor engineering or display engineering. In addition, the monitoring device can determine the abnormal state of the electrostatic chuck by determining the DC voltage of the electrostatic chuck.

[0026] As another example, the monitoring device may measure the tilt of the electrostatic chuck or the tilt of the shower head by measuring the distance from the monitoring device to the upper electrode or the lower electrode.

[0027] Additionally, the monitoring device may determine the level of vibration occurring in the electrostatic chuck or semiconductor device.

[0028] According to one embodiment, the monitoring device of this embodiment can measure a wide area with a thickness below a certain reference so as to be automatically transferred and delivered by a robot. In particular, the monitoring device can measure the characteristics of the edge area of ​​the diagnosed object corresponding to the extreme edge area of ​​a wafer to be used in a subsequent process.

[0029] In such Figure 1In the conventional wafer type monitoring device shown, electronic components 102 such as sensors are arranged inside the hollow wafer 100, so it is impossible to arrange sensors in a portion corresponding to the thickness of the side surface of the wafer 100. As a result, it is impossible to measure the temperature of a portion corresponding to the edge region of the wafer 100 in the electrostatic chuck, that is, the edge region within 3 mm from the reference outer diameter of the wafer.

[0030] In contrast, the cover of the monitoring device of the present invention has a flat shape instead of a hollow structure, and the sensors can be arranged near the edge of the cover, for example, an area within 3 mm from the outer diameter of the cover. As a result, the edge area of ​​the electrostatic chuck can be sensed, that is, the sensing area can be expanded.

[0031] The heater is arranged at the edge area of ​​the electrostatic chuck, and heat is applied or cooled to the wafer to be subjected to etching or deposition processes, etc., through the heater, that is, the heater at the edge area of ​​the electrostatic chuck affects the wafer. Therefore, it is necessary to measure the temperature of the edge area of ​​the electrostatic chuck, etc., but the existing monitoring equipment cannot achieve this. In order to solve this problem, the monitoring equipment of the present invention proposes a structure that can also measure the characteristics of the edge area of ​​the electrostatic chuck.

[0032] Various embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, for the sake of convenience of description, it is assumed that the object to be measured by the monitoring device is an electrostatic chuck, but it is not limited thereto.

[0033] Figure 2 is a diagram illustrating an arrangement of monitoring devices according to an embodiment of the present invention, Figure 3 is an exploded view illustrating the structure of a monitoring device according to an embodiment of the present invention, Figure 4 and Figure 5 is a diagram illustrating an arrangement of monitoring devices according to an embodiment of the present invention, Figure 6 is a diagram illustrating a guide portion and a circuit board according to an embodiment of the present invention, Figure 7 is a diagram illustrating a component coupling structure of a monitoring device according to an embodiment of the present invention, Figure 8 is a diagram illustrating an arrangement process of electronic components according to an embodiment of the present invention, Fig. 9 is a diagram illustrating a portion of a monitoring device according to another embodiment of the present invention, Fig.10 is an exploded view illustrating the structure of a monitoring device according to another embodiment of the present invention, Fig.11 is a diagram illustrating an arrangement of a guide portion and a circuit module according to an embodiment of the present invention.

[0034] Reference Figure 2The monitoring device 200 of this embodiment can be arranged above the electrostatic chuck 202 in the chamber in a contact or non-contact manner, and the shower head 204 can be arranged in a state separated from the monitoring device 200.

[0035] In this case, the wafer transport path in the device is designed to be very narrow. That is, since the interval between the shower head 204 and the electrostatic chuck 202 is designed to be very narrow for managing the density or uniformity of the plasma, the monitoring device 200 is preferably designed to have a thickness below the reference value.

[0036] According to one embodiment, for the monitoring device 200 of this embodiment, the electronic components may be placed on the circuit module and fillers may be filled on the lower electronic components, and then the upper surface may be ground to design the thickness to be below the reference value.

[0037] The monitoring device 200 determines whether the electrostatic chuck 202 is abnormal before the start of the project. When it is determined that the electrostatic chuck 202 is normal, the monitoring device 200 can be removed and the actual project can be performed. For example, after removing the monitoring device 200, the wafer used for the deposition process, etching process, implant process, and photolithography process can be placed on the electrostatic chuck 202.

[0038] Such a monitoring device 200 may not be opened in the chamber, but may be placed over the electrostatic chuck 202 by a robot, as a result of which the chamber may be maintained in a vacuum state.

[0039] According to one embodiment, the monitoring device 200 may also measure the temperature or tilt of the electrostatic chuck 202, the distance between the upper electrode and the lower electrode in the semiconductor device, or the voltage and current in the plasma environment or the vibration level of the device.

[0040] According to one embodiment, the monitoring device 200 may also be Figure 4 and Figure 5 An edge ring 400 is disposed inside the electrostatic chuck 202 .

[0041] Reference Figures 3 to 8 Specifically, the monitoring device 200 of this embodiment may include a lower cover 300 , a guide portion 302 , a circuit module 304 and an upper cover 306 .

[0042] The lower cover 300 protects the circuit module 304 and the electronic components on the circuit module 304 from being affected by an external environment, such as a plasma environment, and can protect the cavity from being contaminated by the circuit module 304 .

[0043] According to one embodiment, the lower cover 300 may be as follows Figure 3The lower cover 300 has the same circular shape as the wafer, is a flat shape, and can be formed of silicon or glass, which are materials commonly used in semiconductor engineering. Alternatively, the lower cover 300 can be formed of silicon carbide, sapphire, Y2O3, YOF, Al2O3 of the ceramic series, or Teflon, PEEK, carbon fiber, etc., which are engineering plastics.

[0044] Since such lower cover 300 is a portion that directly contacts electrostatic chuck 202 as the object to be diagnosed, lower cover 300 can have the same flatness as the silicon wafer.

[0045] According to one embodiment, the lower cover 300 may be as follows Figure 7 The lower cover 300 is bonded to the guide part 302 or the circuit module 304 through the adhesive layer 308. Here, the adhesive layer 308 can be an adhesive such as an acrylic series or a silicon series. On the other hand, the lower cover 300 can be bonded to the guide part 302 or the circuit module 304 using a thermosetting material such as epoxy resin or an insulating material such as SOG, SOD, etc.

[0046] The guide portion 302 protects the side portion of the circuit module 304 from the external environment, such as plasma, and according to the form, the mechanical strength of the monitoring device 200 can be improved. In addition, the area connected by the upper cover 306, the guide portion 302 and the lower cover 300, that is, the area where the upper cover 306, the guide portion 302 and the lower cover 300 exist, can also cool the circuit module 304 from the heat source. For this purpose, the upper cover 306, the guide portion 302 and the lower cover 300 can have the same or similar thermal conductivity as silicon.

[0047] According to one embodiment, the guide part 302 is arranged above the lower cover 300 and may form a space for inserting the circuit module 304. That is, the circuit module 304 may be inserted into the space fixed to the guide part 302. On the other hand, the guide part 302 may surround the circuit module 304.

[0048] Such a guide portion 302 may be formed of the same material as the silicon wafer, or may be formed of silicon carbide, sapphire, ceramic series Al2O3, YOF, Y2O3, etc., or may be formed of engineering plastics such as PEEK, Teflon, carbon fiber, etc.

[0049] According to one embodiment, the guide portion 302 may have the same or similar size and shape as the wafer, and one of the distances from the edge of the guide portion 302 to the space may have a different value, such as Figure 6As shown. For example, the distance from the edge of the guide 302 to the first part of the space may be a, and the distance from the edge of the guide 302 to the second part of the space may be b which is greater than a. If the distance from the edge of the guide 302 to the space is a, the guide 302 may be damaged due to being too thin, and the strength of the monitoring device 200 may not be enhanced. Therefore, the distance from the edge of the guide 302 to a part of the space may be maintained above b, and the distance from the edge of the guide 302 to the other part of the space may be formed to be a according to the position where the sensor 600 is arranged.

[0050] If the distance from the edge of the guide portion 302 to the space is a, the corresponding portion of the circuit module 304 can be close to the edge of the guide portion 302, such as Figure 6 If the sensor 600 is arranged at a corresponding portion in the circuit module 304, the temperature of the electrostatic chuck corresponding to the vicinity of the edge of the wafer can be measured. For example, at least a portion of the sensor 600 can be arranged in a region between a portion of the circuit module 304 having a distance a to the space and a portion having a distance b to the space.

[0051] According to one embodiment, the distance from the edge of the guide portion 302 to the space may be 1.5 mm to 3 mm from the edge of the wafer corresponding to the extreme edge of the wafer. Of course, this length may vary depending on the size of the wafer, but the distance from the edge of the guide portion 302 to the space may correspond to the extreme edge area of ​​the wafer to be used in subsequent processes.

[0052] From another perspective, the position of the sensors arranged on the circuit module 304 may correspond to the extreme edge region of the wafer. However, the mechanical strength of the guide portion 302 weakened by processing a certain portion of the guide portion 302 to the extreme edge region may be compensated by other portions of the guide portion 302.

[0053] According to one embodiment, the space and circuit module 304 of the guide portion 302 may have a structure in which small quadrilaterals are formed on the hypotenuse of a large quadrilateral. Of course, the space and circuit module 304 may also have other shapes such as a circular shape. That is, under the premise that the sensor can be arranged at a position corresponding to the extreme edge area of ​​the wafer, the space and circuit module 304 may have various shapes.

[0054] According to other embodiments, one of the distances from the edge of the guide portion 302 to the circuit module 304 may have different values. For example, the distance from the edge of the guide portion 302 to the first portion of the circuit module 304 may be c, and the distance from the edge of the guide portion 302 to the second portion of the circuit module 304 may be d which is greater than c.

[0055] According to yet another embodiment, Fig.10 and Fig.11 As shown, the circuit module 304 has a circular or elliptical shape that is the same or similar to a wafer, and the guide portion 302 may include a side portion for protecting the side of the circuit module 304 and a protrusion 1000 protruding from the side portion in a cross direction, such as a vertical direction. The protrusions 1000 may be spaced apart from each other, and the circuit module 304 may also have a circular or elliptical shape that is the same or similar to a wafer, and the protrusion 1000 may cover a portion of the upper surface of the circuit module 304. At this time, the sensor for sensing the edge of the diagnosed body may be arranged in the space 1010 between the protrusions 1000 in the circuit module 304, and the electronic components such as the microprocessor may be arranged outside the protrusion 1000 in the circuit module 304. From another perspective, the guide portion 304 covers the edge portion of the circuit module 304, and a groove 1010 is formed in the guide portion 304, and at least a portion of the sensor for sensing the edge of the diagnosed body may be arranged in the groove 1010.

[0056] The circuit module 304 may be arranged in the inner space of the guide portion 302 on the lower cover 300 .

[0057] Observing these circuit modules 304, electronic components 602 such as microprocessors, wireless communication devices, wireless charging devices, sensors, etc. can be arranged on the circuit board 800. In particular, some sensors 600 can be arranged on the circuit board 800 in an area corresponding to the extreme edge area of ​​the wafer.

[0058] According to one embodiment, Figure 8 As shown, since the thickness of the circuit board 800 is below a certain level, the bearing capacity of the force may be weak. In order to enhance this point, a fixed cover 402 for improving flatness and preventing the circuit board 800 from bending can be arranged in an area other than the electronic components 602 arranged on the circuit board 800. The fixed cover 402 can be made of the same or similar material as the upper cover 306 or the lower cover 300, such as epoxy resin, silicon, silicon carbide, glass, etc. At this time, after the fixed cover 402 is arranged on the circuit board 800, an empty gap for the leads, pads, etc. of the electronic components is generated. In this case, the empty gap is filled with a filler 404, and the filler 404 can be a liquid material such as epoxy resin, thermosetting resin, ceramic resin, etc. to improve the flatness of the circuit module 304.

[0059] According to one embodiment, the circuit module 304 includes a mother substrate connected with wires and a filling substrate for protecting the electronic components and improving flatness. The mother substrate and the filling substrate can be bonded with an acrylic or silicone adhesive.

[0060] According to one embodiment, at least a portion of the heights of the electronic components may be different, so filler 404 may be filled on the upper portion of the electronic components with lower heights to make all the electronic components have the same height. This is because if the heights of the electronic components are different, it may be difficult to bond with the upper cover 306.

[0061] For example, Figure 8 As shown, the height of the sensor 600 may be relatively lower than the height of the microprocessor. In this case, a filler 404 may be filled on the upper part of the sensor 600 to make the sensor 600 and the microprocessor have the same height. Here, the upper end height of the electronic component may be the same as the upper end height of the guide portion 302.

[0062] According to one embodiment, the filler 404 may be a non-conductor, such as epoxy or silicon, thermosetting resin, ceramic resin, etc.

[0063] According to one embodiment, Figure 8 As shown, filler 404 may be applied to some electronic components and then the upper surface of the electronic components may be ground to make the upper surface of the circuit module 304 constant. That is, the filler filled to a certain height may be removed, and the removed portion may be named as a grinding layer 406. Depending on the situation, the surface of the electronic components may also be ground during the grinding process.

[0064] According to one embodiment, the circuit module 304 may include a circuit board 800 connected with wires and a fixing cover 402 for protecting electronic components and improving flatness. Here, the circuit board 800 and the fixing cover 402 may be bonded with an acrylic or silicon adhesive.

[0065] According to one embodiment, Fig. 9 As shown, a first EMI shielding layer 406 for shielding electromagnetic waves can be formed on the guide portion 302 and the electronic component 602, and a second EMI shielding layer can be formed at the bottom of the circuit module 304. Here, the shielding layer can be formed by coating a liquid material or using a thin film, and can be formed of materials such as gold, silver, copper, aluminum, or a mixture thereof.

[0066] According to other embodiments, an EMI shielding layer may also be formed on the lower cover 300 and the upper cover 306 .

[0067] According to one embodiment, Fig. 9 As shown, a heat insulating layer 408 may be further arranged below or above the circuit module 304 to protect the electronic components 602 from thermal shocks of low or high temperatures by intentionally reducing the thermal conductivity from the heat source to the circuit module 304. The heat insulating layer 408 may include aerogel with low thermal conductivity and may be arranged in the form of a liquid material or a film.

[0068] The upper cover 306 may be bonded to the guide portion 302 or the circuit module 304 via an adhesive layer 308 to protect the components.

[0069] The adhesive layer 308 may be an acrylic or silicon adhesive. On the other hand, the upper cover 306 may be attached to the guide portion 302 or the circuit module 304 using a thermosetting material such as epoxy resin or an insulating material such as SOG or SOD.

[0070] On the other hand, the adhesive layer 308 between the lower cover 300 and the guide part 302 or the circuit module 304 and the adhesive layer 308 between the guide part 302 or the circuit module 304 and the upper cover 306 may be formed of the same adhesive or adhesives with different properties.

[0071] In summary, in the monitoring device 200 of the present embodiment, at least a portion of the circuit module 304 is arranged in the space of the guide portion 302, and the sensor can be arranged from the center area of ​​the wafer in the circuit module 304 to the area corresponding to the extreme edge area. As a result, the characteristics of the edge area of ​​the electrostatic chuck 202 that heats the edge area of ​​the wafer can be measured.

[0072] On the other hand, although the abnormal state of the electrostatic chuck is determined above, the monitoring device 200 can also be used to diagnose the RF voltage, RF current, RF power, tilt of the chuck, tilt of the shower head, and vibration level in the etching process, the temperature, RF voltage, RF current, RF power, tilt of the chuck, tilt of the shower head in the deposition process, the temperature, tilt or vibration level of the baking chuck in the photolithography process, and the temperature, tilt or vibration level of the chuck in the implant device. When the temperature of the chuck is low or high, it can be directly measured by arranging the filling substrate, and in some cases it can also be remotely measured.

[0073] In addition, the monitoring device 200 can also be used to measure the temperature, vibration or tilt of the photomask used in the exposure process. In this case, the monitoring device 200 can have the same structure as the above structure.

[0074] According to other embodiments, the monitoring device 200 may not be in physical contact with the electrostatic chuck 202. The monitoring device 200 may monitor the temperature of the high temperature chuck in a non-contact manner on the lift pins of the chuck, thereby diagnosing the high temperature chuck in a deposition process.

[0075] In addition, the monitoring device 200 can also be used as an optical sensor for sensing light or an electrical sensor for measuring electrical components to diagnose the diagnosed body. In this case, in order to carry the optical sensor, the monitoring device 200 having the above structure can be used, but including a light receiving sensor for receiving light and a hole through which light can pass can be formed on the monitoring device 200.

[0076] In addition, in order to carry the electrical sensor, the electrical sensor may be built inside the monitoring device 200 , and a hole through which the electrical component can pass may be formed in the monitoring device 200 .

[0077] In order to measure the tilt, a sensor capable of measuring displacement may be built into the monitoring device 200 , and a hole through which an electrical component or an optical component can pass may be formed in the monitoring device 200 .

[0078] On the other hand, the constituent elements of the above-mentioned embodiment can be easily grasped from the perspective of the process. That is, each constituent element can be grasped through each process. In addition, the process of the above-mentioned embodiment can be easily grasped from the perspective of the constituent elements of the device.

[0079]

Industrial Availability

[0080] The above-mentioned embodiments of the present invention are disclosed for illustrative purposes, and those skilled in the art may make various modifications, changes and additions within the concept and scope of the present invention, and such modifications, changes and additions should be deemed to belong to the scope of the appended claims.

Claims

1. A monitoring device, characterized in that: include: Lower cover; a guide portion arranged on the lower cover; A circuit module having at least one electronic component arranged on the upper portion of the circuit board; as well as an upper cover arranged on the guide portion or the circuit module, The guide portion forms a space, and at least a portion of the circuit module is arranged in the space.

2. The monitoring device according to claim 1, characterized in that: A first distance from an edge of the guide portion to a point in the space is different from a second distance from the edge to another point in the space, The first distance is smaller than the second distance, At least a part of the sensor as the electronic element is arranged in a region between a portion of the circuit module corresponding to one point in the space and a portion corresponding to another point in the space to measure a peripheral region of the diagnosed object.

3. The monitoring device according to claim 2, characterized in that: The monitoring device should be arranged on the electrostatic chuck, The monitoring device is removed after determining the characteristics of the electrostatic chuck, and a wafer for processing is placed on the electrostatic chuck after the monitoring device is removed. The sensors are arranged in an area of ​​the circuit module corresponding to a limit edge area of ​​the wafer.

4. The monitoring device according to claim 1, characterized in that: The lower cover and the upper cover have a planar shape, respectively, and the space or the circuit module has a structure in which a relatively large shape is combined with a relatively small shape. Sensors as the electronic components are arranged on the relatively small shape.

5. The monitoring device according to claim 1, characterized in that: A first component with a relatively low height and a second component with a relatively high height are arranged on the circuit module. The first element is coated with a filler and then polished to have the same height as the second element. The first element coated with the filler, the second element, and the guide portion have the same height.

6. The monitoring device according to claim 5, characterized in that: A first EMI shielding layer is formed on the coated first element and the second element, and a second EMI shielding layer is formed at a lower portion of the circuit module.

7. The monitoring device according to claim 1, characterized in that: EMI shielding layers for shielding electromagnetic waves are respectively formed on the upper cover and the lower cover.

8. The monitoring device according to claim 1, characterized in that: The lower cover, the guide part or the upper cover are respectively formed of the same material as the silicon wafer, silicon carbide, sapphire, Y2O3, YOF, Al2O3 of the ceramic series, or Teflon, PEEK, and carbon fiber as engineering plastics.

9. The monitoring device according to claim 1, characterized in that: The circuit module includes a circuit board, electronic components arranged on the circuit board, and a fixing cover arranged on the circuit board in an area other than the electronic components. The fixing cover is formed of epoxy resin, silicon, silicon carbide or glass.

10. The monitoring device according to claim 1, characterized in that: The guide portion and the circuit module have a circular or elliptical shape respectively, and the guide portion includes a side portion for protecting a side of the circuit module and a protrusion that is perpendicular to the side portion and covers a portion of the upper surface of the circuit module. The protrusions are spaced apart from each other, sensors for sensing the diagnosed body are arranged between the protrusions in the circuit module, and electronic components other than the sensors are arranged outside the protrusions in the circuit module.

11. A monitoring device, characterized in that: include: Lower cover; A circuit module arranged on the lower cover; Components arranged on the circuit module; as well as an upper cover arranged on the element, The element has a first element with a relatively low height and a second element with a relatively high height, As the filler is filled on the first element, the heights of the first element and the second element filled with the filler are the same.

12. The monitoring device according to claim 11, characterized in that: A heat insulating layer is formed at a lower portion of the circuit module for protecting the components from thermal shock.

13. A monitoring device, characterized in that: include: Lower cover; A circuit module arranged on the lower cover; at least one electronic component arranged on the circuit module; as well as an upper cover arranged on the electronic component, The sensor as the electronic component is arranged on an area of ​​the circuit module corresponding to the limit edge area of ​​the wafer used in the project.

14. A method for manufacturing a monitoring device, characterized in that: include: Steps for arranging circuit boards on the lower cover; A step of arranging a first component with a relatively low height and a second component with a relatively high height on the circuit board; A step of filling the first element with a filler so as to reach the same height as the second element; as well as The step of arranging a cover on the first element and the second element.

15. The method for manufacturing monitoring equipment according to claim 14, characterized in that: The method further comprises the step of forming a guide portion so as to surround the circuit board. After the first element is filled with filler, grinding is performed so that the first element filled with the filler, the second element, and the upper end of the guide portion have the same height.

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