Semiconductor component polishing device

Abstract

The invention discloses a semiconductor component polishing device which comprises a polishing machine pasting disc, the lower portion of the polishing machine pasting disc is tightly attached to a polyester sponge disc, the upper portion of the polishing machine pasting disc is connected with one end of an output shaft of a pneumatic polishing device through an annular support, the other end of the output shaft is connected with a polishing machine, and the polishing machine is provided with a control switch and a compressed air connector. A temperature control sensing head and a heating element are arranged in the grinding machine pasting disc, semi-solidified flexible polishing paste is arranged on the sponge disc, snake melon cloth and abrasive paper are omitted, the high-density imported polyester sponge disc is adopted as a grinding material, and then the metal polishing paste is taken as grinding liquid to be coated on the sponge disc. The high-density imported polyester sponge disc is high in density, soft and high in water absorption capacity. After water absorption saturation, the polishing process is in a wet state, and no scratch or loss is caused to the aluminum part; the metal polishing paste contains fine grinding particles and has cleaning and polishing effects. After being used, the cleaning agent can effectively remove surface deposits, does not change the surface microstructure and roughness, and also can improve the surface glossiness of the semiconductor quartz component. The metal polishing paste further has the advantages that the metal polishing paste is easy to clean, residual liquid can be completely cleaned through pure water flushing, sampling detection is conducted on the surface of a polished product, and zero residue is achieved.

Description

Technical Field

[0001] The invention relates to a semiconductor component polishing device. Background Art

[0002] In the semiconductor manufacturing process, CVD (chemical vapor deposition) is one of the key processes and a material preparation technology. It is a process in which gaseous reactants react chemically under the action of high temperature, plasma or other energy sources (such as lasers, electron beams, etc.) to generate solid products and deposit them on the surface of the substrate. At the same time, by-products may also be produced, which may exist in the form of particles, films, etc. Since semiconductor quartz components are in the flow path of the reaction gas, they are key components in the CVD process and are close to the reaction area, by-products can easily adhere to their surface. With the continuous development of semiconductor manufacturing technology, chip processes are becoming more and more sophisticated, and the cleanliness and performance requirements of semiconductor quartz components are also getting higher and higher. Therefore, semiconductor quartz components need to be cleaned and regenerated regularly and efficiently.

[0003] At present, the cleaning process in the domestic cleaning industry mainly uses a certain proportion of acid or alkali solution to soak and chemically react to remove the deposits on the semiconductor quartz parts. For the deposits that cannot be removed by chemical reaction, they are generally removed by physical grinding with a sponge or sandpaper.

[0004] The existing technology has two disadvantages: First, when the surface aluminum fluoride and other deposits are removed by using a scouring pad or sandpaper, the semiconductor quartz component substrate is greatly lost and the glossiness is reduced. Second, scouring pad or sandpaper polishing changes the surface microstructure, roughness, etc., so this method changes the performance of the semiconductor quartz component and affects the deposition process.

[0005] In view of the shortcomings of the prior art, the present invention readjusts the grinding materials and methods. The new grinding materials and abrasive paste are used for wet grinding to effectively remove surface sediments, reduce the loss of the substrate, and reduce the changes in the surface microstructure and roughness. At the same time, the surface glossiness of the semiconductor quartz parts can also be improved. Summary of the invention

[0006] The object of the present invention is to provide a semiconductor component polishing device to solve the problems raised in the above background technology.

[0007] To achieve the above-mentioned purpose, the present invention provides the following technical solution: it includes a grinder plate, the lower part of which is tightly attached to a polyester sponge plate, the upper part of which is connected to one end of the output shaft of a pneumatic grinding device through an annular bracket, the other end of the output shaft is connected to a grinder, the grinder is provided with a control switch and a compressed air interface, the inside of the grinder plate is provided with a temperature control sensor head and a heating element, and the sponge plate is provided with a semi-solidified flexible polishing paste.

[0008] Preferably, the heating element comprises a W-shaped heating element shell and an internal heating wire, and a heat insulation plate is provided between the grinder plate and the annular bracket.

[0009] Preferably, the composition of the semi-solidified flexible polishing paste is a mixture of W3 diamond hard abrasive and silica active soft abrasive at the same concentration of 2.5wt.%, and deionized water is added to make it thick.

[0010] Preferably, the preparation method of the silica active soft abrasive is as follows: 100 ml of deionized water, 100 ml of anhydrous ethanol and 12, l of ammonia solution are mixed and placed in a magnetic stirring water bath, stirred at a constant temperature of 30°C for 10 minutes, and then 200 ml of an ethanol solution containing 18 ml of ethyl orthosilicate is added to the mixed solution for reaction for 18 hours and aging for 6 hours. After 3 centrifugal treatments, each at a speed of 8000 rpm / min for 10 minutes, a mixed solution containing a white solid precipitate can be obtained. The white solid in the mixed solution is dried at a constant temperature of 60°C for 12 hours, and ground to finally obtain uniformly dispersed white abrasive particles, namely, silica active soft abrasive.

[0011] Compared with the prior art, the beneficial effects of the present invention are: the sponge and sandpaper are eliminated, and a high-density imported polyester sponge disk is used as the polishing material, and then the metal polishing paste is applied to the sponge disk as the grinding liquid. The high-density imported polyester sponge disk has high density, is soft, and has strong water absorption capacity. After saturation with water, the polishing process is in a wet state, and there is no scratch or loss on the aluminum parts; the metal polishing paste contains fine abrasive particles and has a cleaning and polishing effect. After use, the surface deposits can be effectively removed without changing the surface microstructure and roughness, and the surface gloss of semiconductor quartz parts can also be improved. This metal polishing paste has another major advantage - it is easy to clean. The residual liquid can be completely cleaned by rinsing with pure water. The surface of the polished product is sampled and tested, and "0" residue is found. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the structure of the present invention; Figure 2 This is an exploded view of the grinding machine plate of the present invention.

[0013] In the figure: 1 compressed air interface, 2 control switch, 3 grinder pad, 4 polyester sponge pad, 5 semi-solidified flexible polishing paste, 6 ring bracket, 7 insulation board, 101 heating wire, 102 W-type heating element housing. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] See also Figure 1-2 The present invention provides a technical solution: a semiconductor component polishing device, including a grinder plate, the lower part of the grinder plate is tightly attached to a polyester sponge plate, the upper part is connected to one end of the output shaft of a pneumatic grinding device through an annular bracket, the other end of the output shaft is connected to a grinder, the grinder is provided with a control switch and a compressed air interface, the inside of the grinder plate is provided with a temperature control sensor head and a heating element, the sponge plate is provided with a semi-solidified flexible polishing paste, the heating element includes a W-shaped heating element shell and an internal heating wire, and a heat insulation plate is provided between the grinder plate and the annular bracket.

[0016] The processing parameters are: the temperature of the processing interface is controlled at 50℃±2℃.

[0017] The preparation method of silica active soft abrasive is as follows: 100 ml of deionized water, 100 ml of anhydrous ethanol and 12, l of ammonia solution are mixed and placed in a magnetic stirring water bath, and stirred at a constant temperature of 30°C for 10 minutes, and then 200 ml of ethanol solution containing 18 ml of ethyl orthosilicate is added to the mixed solution for reaction for 18 hours and aging for 6 hours. After 3 centrifugal treatments, each time at a speed of 8000 rpm / min, the mixed solution containing white solid precipitation can be obtained. The white solid in the mixed solution is dried at a constant temperature of 60°C for 12 hours, and ground to finally obtain uniformly dispersed white abrasive particles, namely silica active soft abrasive.

[0018] The composition of the semi-solidified flexible polishing paste is a mixture of W3 diamond hard abrasive and silica active soft abrasive at the same concentration of 2.5wt.%, and deionized water is added to make it thick.

[0019] Under room temperature conditions, the material removal rate of the semi-solidified flexible polishing paste is 30% and 53% higher than that of the existing grinding fluid. When the processing interface temperature is 50°C, the maximum sediment removal rate is 101% higher than that at room temperature, and the processed surface is smoother and less damaged. The semiconductor quartz component grinding process using the device of the present invention to assist the semi-solidified flexible polishing paste can promote the synergistic effect of hard abrasive mechanical cutting and active abrasive chemical corrosion, achieve efficient material removal and improve surface processing quality, and provide an efficient method for the processing of semiconductor quartz components.

[0020] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor component polishing device, comprising a polisher pad, the lower part of which is in close contact with a polyester sponge disk, and the upper part of which is connected to one end of an output shaft of a pneumatic polishing device through an annular bracket, and the other end of the output shaft is connected to a polisher, and a control switch and a compressed air interface are provided on the polisher, wherein: A temperature control induction head and a heating element are arranged inside the grinding machine plate, and a semi-solidified flexible polishing paste is arranged on the sponge plate.

2. A semiconductor component polishing device according to claim 1, characterized in that: The heating element comprises a W-shaped heating element shell and an internal electric heating wire, and a heat insulation plate is arranged between the grinding machine plate and the annular bracket.

3. A semiconductor component polishing device according to claim 1, characterized in that: The composition of the semi-solidified flexible polishing paste is a mixture of W3 diamond hard abrasive and silica active soft abrasive at the same concentration of 2.5wt.%, and deionized water is added to make it thick.

4. A semiconductor component polishing device according to claim 3, characterized in that: The preparation method of silica active soft abrasive is as follows: 100 ml of deionized water, 100 ml of anhydrous ethanol and 12, l of ammonia solution are mixed and placed in a magnetic stirring water bath, and stirred at a constant temperature of 30°C for 10 minutes, and then 200 ml of ethanol solution containing 18 ml of ethyl orthosilicate is added to the mixed solution for reaction for 18 hours and aging for 6 hours. After 3 centrifugal treatments, each time at a speed of 8000 rpm / min, the mixed solution containing white solid precipitation can be obtained. The white solid in the mixed solution is dried at a constant temperature of 60°C for 12 hours, and ground to finally obtain uniformly dispersed white abrasive particles, namely silica active soft abrasive.

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