Multi-port microcavity chaotic laser and regulation and control method thereof

Abstract

The invention provides a multi-port microcavity chaotic laser, which comprises N echo wall cavities (1) which are sequentially arranged along a diagonal line, and two adjacent echo wall cavities (1) are in cross coupling N > = 2; the ohmic contact windows (2) are positioned at the upper ends of the N echo wall cavities (1) and are used for carrying out current non-uniform injection so as to generate chaotic laser; and the M waveguides (3) are at least in contact connection with the outer wall of one echo wall cavity (1) in the N echo wall cavities (1), are parallel to one diagonal line of the echo wall cavities (1), form a symmetrical structure together with the N echo wall cavities (1) and are used for directionally outputting the chaotic laser, and M is a multiple of 1 or 2. The invention further provides a regulation and control method of the multi-port micro-cavity chaotic laser, the output power and the chaotic bandwidth of the multi-port micro-cavity chaotic laser can be improved, and the problem that multiple paths of chaotic optical signals need to be obtained at the same time in the photon integration field is solved.

Description

Technical Field

[0001] The present disclosure relates to the fields of semiconductor optoelectronics, optical computing and random number generation, and in particular to a multi-port microcavity chaotic laser and a control method thereof. Background Art

[0002] Optical chaotic signals have the characteristics of randomness and large spectral bandwidth, and have important application value in the fields of physical random number generation, secure communication, sensor detection, and photonic computing. Traditional semiconductor lasers require external light injection, optical feedback, or photoelectric feedback to introduce perturbations to achieve chaotic output. The system structure is complex and the working stability is poor. On-chip photon integrated chaotic lasers based on optical feedback have achieved size reduction, but secondary epitaxy requires complex processes and high mass production costs. In addition, the weak periodicity introduced by optical feedback is inevitable, which reduces the quality of chaotic signals.

[0003] The currently developed integrated or on-chip chaotic lasers all have single-port outputs. In application scenarios where multiple chaotic signals are required at the same time, discrete devices have to be used for splitting or multiple chaotic lasers have to be used, which makes the system complex and makes integrated applications difficult. For example, the current random number generators based on chaotic signals require post-processing, and many post-processing methods often require the original chaotic signal to be split into two channels first; many parallel random number generators can achieve an increase in the random number generation rate by processing multiple chaotic signals; many optical calculations require multiple signal inputs. Therefore, it is necessary to propose a multi-port semiconductor chaotic laser for integrated applications. Summary of the invention

[0004] In view of the above problems, the present invention provides a multi-port microcavity chaotic laser and a control method thereof to solve at least one of the above technical problems.

[0005] The present disclosure provides a multi-port microcavity chaotic laser, comprising: N whispering gallery cavities, which are arranged in sequence along a diagonal line, and two adjacent whispering gallery cavities are intersectingly coupled, the cross section of the whispering gallery cavity is an arc-edge polygon, the adjacent vertices of the arc-edge polygon are connected to each other to form a regular polygon, and the sides are arc edges with the same curvature, which are used to form total internal reflection of light, and N is greater than or equal to 2; an ohmic contact window, in which metal is deposited to form a P electrode layer, which is located at the upper end of the N whispering gallery cavities and is used to perform non-uniform current injection to achieve nonlinear interaction of modes to generate chaotic lasers; M waveguides, which are in contact with and connected to the outer wall of at least one of the N whispering gallery cavities, are parallel to one of the diagonals of the whispering gallery cavity, and form a symmetrical structure with the N whispering gallery cavities, which are used to directional output chaotic lasers, and M is a multiple of 1 or 2.

[0006] According to an embodiment of the present disclosure, the center distance between two adjacent whispering gallery cavities is associated with the number of modes of the chaotic laser.

[0007] According to an embodiment of the present disclosure, a groove is provided inwardly at the intersection of two adjacent whispering gallery cavities to control the number of modes of the chaotic laser.

[0008] According to an embodiment of the present disclosure, the arc edge shape variable of the arc edge polygon is:

[0009]

[0010] Among them, a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the arc-edge radius of the arc-edge polygon, and δ is the arc-edge deformation.

[0011] According to an embodiment of the present disclosure, the whispering gallery cavity and the waveguide have the same structure, and include, from bottom to top: a first limiting layer, used to limit the light field of the chaotic laser; an active region layer, used to provide a gain medium for the chaotic laser; a second limiting layer, used to limit the light field of the chaotic laser; and an ohmic contact layer, used to reduce contact resistance.

[0012] According to an embodiment of the present disclosure, it also includes: an N-type substrate, arranged at the bottom of the first confinement layer, for supporting the multi-port microcavity chaotic laser; an N-electrode layer, arranged below the N-type substrate, for cooperating with the P-electrode layer to realize current injection of the multi-port microcavity chaotic laser.

[0013] According to an embodiment of the present disclosure, the whispering gallery cavity is an active cavity, and its material structure is a quantum well or quantum dot structure.

[0014] According to an embodiment of the present disclosure, the whispering gallery cavity is a square, hexagon, octagon, arc-edge quadrilateral, arc-edge hexagon or arc-edge octagon structure.

[0015] According to an embodiment of the present disclosure, the light outlet of the waveguide is a cleavage surface or an end-face coating structure.

[0016] On the other hand, the present disclosure provides a control method for a multi-port microcavity chaotic laser, which is applied to the multi-port microcavity chaotic laser as described in any one of the first aspects, comprising: adjusting the output power of the chaotic laser by setting the number of whispering gallery cavities, wherein the more the number of whispering gallery cavities, the higher the laser output power; and adjusting the center distance between adjacent whispering gallery cavities to control the number of modes of the chaotic laser generated by the multi-port microcavity chaotic laser.

[0017] At least one of the above technical solutions adopted in the embodiments of the present disclosure can achieve the following beneficial effects:

[0018] (1) The multi-port microcavity chaotic laser can form a single cavity with a larger cavity area by overlapping multiple whispering gallery cavities, thereby improving the output power of the monolithic microcavity chaotic laser; the number of modes can be effectively controlled by controlling the depth of the concave angle, and the chaotic bandwidth can be increased by utilizing the optical-optical resonance effect.

[0019] (2) The multi-port microcavity chaotic laser can have multiple output ports and can output multiple chaotic signals simultaneously, which is convenient for on-chip integration of random number application post-processing and realization of on-chip random number generator; it is convenient for the realization of parallel random numbers and solves the multi-channel input requirements in optical computing applications.

[0020] (3) Compared with the traditional chaotic laser scheme, this multi-port microcavity chaotic laser does not require external light injection, external light feedback or photoelectric feedback. The system is simple and has high stability. The chaotic signal has no feedback delay peak, the on-chip chaotic signal has a large bandwidth, and the chaotic signal quality is high.

[0021] (4) The multi-port microcavity chaotic laser has a simple manufacturing process, does not require secondary epitaxy, does not require complex active and passive integration technology, does not require hybrid integration technology, and has low cost. It has important application value in physical random number generation, secure communication, chaos detection, and photon computing. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] For a more complete understanding of the present disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, in which:

[0023] Figure 1A and 1B The three-dimensional structure diagram and the planar structure diagram of a polygonal microcavity chaotic laser provided by an embodiment of the present disclosure are schematically shown respectively;

[0024] Figures 2A-2D Schematically showing various polygonal multi-port microcavity chaotic lasers provided by embodiments of the present disclosure;

[0025] Figure 3A and 3B A schematic planar structure diagram and a schematic three-dimensional structure diagram of a dual-port microcavity chaotic laser provided according to an embodiment of the present disclosure are schematically shown respectively;

[0026] Figure 4A and 4B The fundamental mode and first-order mode mode field distributions of a chaotic laser generated by a dual-port microcavity chaotic laser provided according to an embodiment of the present disclosure are schematically shown respectively;

[0027] Figure 5 The power-current curve diagram of two output ports of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure is schematically shown;

[0028] Fig. 6A and 6B Schematically shows the chaotic signal spectrum of two output ports of a dual-port microcavity chaotic laser measured at an injection current of 29 mA according to an embodiment of the present disclosure;

[0029] Fig. 7A and 7B Schematically shows the chaotic signal spectrum of two output ports of a dual-port microcavity chaotic laser measured at an injection current of 29 mA according to an embodiment of the present disclosure;

[0030] Fig. 8A and 8B The figure schematically shows the autocorrelation function diagram of the chaotic signal timing signal of the two output ports measured at the injection current of 29 mA according to an embodiment of the present disclosure.

[0031] Description of reference numerals:

[0032] 1- Whispering gallery cavity; 2- Ohm contact window; 3- Waveguide;

[0033] 101 - N electrode layer, 102 - N-type substrate, 103 - lower confinement layer, 104 - active region layer, 105 - upper confinement layer, 106 - ohmic contact layer, 107 - P electrode layer. DETAILED DESCRIPTION

[0034] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0035] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0036] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0037] In order to solve the problems of low output power and small chaotic operating current range of existing microcavity chaotic lasers, the present invention proposes a multi-port microcavity chaotic laser, which can effectively increase the size of the whispering gallery cavity, suppress high-order transverse modes, improve the waveguide coupling output efficiency of the laser, increase the output power of the chaotic laser, and expand the chaotic operating current range while meeting the requirements for chaotic laser generation.

[0038] The disclosed embodiment provides a multi-port microcavity chaotic laser, comprising: N whispering gallery cavities 1, arranged in sequence along a diagonal line, wherein two adjacent whispering gallery cavities 1 are intersectingly coupled, the cross section of the whispering gallery cavity 1 is an arc-edge polygon, the adjacent vertices of the arc-edge polygon are connected to each other to form a regular polygon, and the sides are arc edges with the same curvature, which are used to form total internal reflection of light, N ≥ 2; ohmic contact windows 2, formed by depositing metal in the window to form a P electrode layer 107, which are all located at the upper ends of the N whispering gallery cavities 1, and are used to perform non-uniform current injection to achieve nonlinear interaction of modes to generate chaotic lasers; M waveguides 3, which are in contact with the outer wall of at least one of the N whispering gallery cavities 1, and are parallel to one of the diagonals of the whispering gallery cavity 1, and together with the N whispering gallery cavities 1 form a symmetrical structure, which is used to directional output chaotic lasers, and M is a multiple of 1 or 2.

[0039] According to a multi-port microcavity chaotic laser proposed in the present disclosure, while meeting the requirements for chaotic laser generation, the size of the whispering gallery cavity can be effectively increased, high-order transverse modes can be suppressed, the output power of the chaotic laser can be improved, the chaotic operating current range can be expanded, and multi-channel chaotic simultaneous output can be achieved, thereby solving the problems of low output power and small chaotic operating current range of existing microcavity chaotic lasers.

[0040] Figure 1A and 1B The three-dimensional structure diagram and the planar structure diagram of a polygonal microcavity chaotic laser provided by the embodiment of the present disclosure are schematically shown respectively.

[0041] like Figure 1A and 1BAs shown, in a multi-port microcavity chaotic laser provided in an embodiment of the present disclosure, the structures of the whispering gallery cavity 1 and the waveguide 3 are the same, and include, from bottom to top, an N-electrode layer 101, an N-type substrate layer 102, a lower limit layer 103, an active region layer 104, an upper limit layer 105, and an ohmic contact layer 106. The first limit layer 103 is used to limit the light field of the chaotic laser; the active region layer 104 is used to provide a gain medium for the chaotic laser; the second limit layer 105 is used to limit the light field of the chaotic laser; and the ohmic contact layer 106 is used to reduce the contact resistance. The N-type substrate 102 is disposed at the bottom of the first limit layer 103 to support the multi-port microcavity chaotic laser; the N-electrode layer 101 is disposed below the N-type substrate 102 to cooperate with the ohmic contact window 2 to realize current injection of the multi-port microcavity chaotic laser. The ohmic contact window 2 is located at the upper end of the whispering gallery cavity 1, and is used to perform non-uniform current injection to realize nonlinear interaction of modes to generate chaotic lasers. Optionally, the ohmic contact window 2 can be a plurality of windows, evenly distributed at the upper ends of the N whispering gallery cavities; the ohmic contact window 2 can also be a ring structure, symmetrically arranged at the upper ends of the N whispering gallery cavities. The figure schematically shows a waveguide 3 in contact with the outer wall of the whispering gallery cavity 1 for directional output of chaotic laser.

[0042] Optionally, the waveguide 3 and the whispering gallery cavity 1 in the multi-port microcavity chaotic laser provided in the embodiment of the present disclosure can be made of the same material and the same process, or can be made of different materials. The active region layer of the whispering gallery cavity 1 has a quantum well structure or a quantum dot structure, and injecting current into it can provide optical gain and form total internal reflection of light.

[0043] like Figure 1B As shown, the cross section of the whispering gallery cavity 1 is an arc-edge polygon, the adjacent vertices of the arc-edge polygon are connected to form a regular polygon, and the sides are arcs with the same curvature. The arc-edge shape variable of the arc-edge polygon is:

[0044]

[0045] Among them, a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the arc-edge radius of the arc-edge polygon, and δ is the arc-edge deformation.

[0046] Optionally, the whispering gallery cavity 1 is formed of edges and points in the shape of a square, a hexagon, an octagon, an arc-edge quadrilateral, an arc-edge hexagon or an arc-edge octagon, without specific limitation.

[0047] In this embodiment, the center distance between two adjacent whispering gallery cavities 1 is related to the number of chaotic laser modes. In addition, the depth of the angle formed at the intersection of two adjacent whispering gallery cavities 1 can also regulate the number of chaotic laser modes. Based on this, the embodiment of the present disclosure also provides a method for regulating a multi-port microcavity chaotic laser.

[0048] The disclosed embodiment also provides a method for controlling a multi-port microcavity chaotic laser, which includes: adjusting the output power of the chaotic laser by setting the number of whispering gallery cavities 1, and the more the number of whispering gallery cavities 1, the higher the output power of the laser. On the other hand, the method includes controlling the center distance of the two cavities when overlapping, controlling the depth of the angle formed, and thus controlling the number of modes. In addition, the method also includes opening a groove inward at the intersection of two adjacent whispering gallery cavities 1, which can also control the number of modes of the chaotic laser.

[0049] In this embodiment, the waveguides 3 are parallel to each other and have the same output direction, or the waveguides 3 have different output directions, forming a symmetrical structure together with the N whispering gallery cavities 1 . Figures 2A to 2D The schematic diagram of the planar structure of the multi-port microcavity chaotic laser provided by the embodiment of the present disclosure is shown schematically.

[0050] Figures 2A to 2D A multi-port microcavity chaotic laser with a whispering gallery cavity 1 being an arc-edge quadrilateral is shown. Figure 2A In , the number of waveguides 3 is 2, and the two waveguides 3 (P1, P2) are symmetrically arranged relative to a diagonal line of the whispering gallery cavity 1 (a diagonal line along the arrangement direction of the two whispering gallery cavities 1), and are both parallel to the diagonal line, forming a dual-port waveguide 3 distribution mode with opposite laser emission directions; in Figure 2B In the embodiment, the number of waveguides 3 is 2, and two waveguides 3 (P1, P2) are arranged parallel to each other relative to a diagonal line of the whispering gallery cavity 1 (a diagonal line along the arrangement direction of the two whispering gallery cavities 1), forming a dual-port waveguide distribution mode with the same laser emission direction; Figure 2C In the embodiment, the number of waveguides 3 is 2, and two waveguides 3 (P1, P2) are arranged parallel to each other along a diagonal line of the whispering gallery cavity 1 (a diagonal line perpendicular to the arrangement direction of the two whispering gallery cavities 1), forming a waveguide distribution mode with two output ports. Figure 2D In the figure, the number of waveguides 3 is 4, and two waveguides 3 (P1, P2, P3, P4) are symmetrically arranged relative to a diagonal line of the whispering gallery cavity 1 (a diagonal line perpendicular to the arrangement direction of the two whispering gallery cavities 1) and are arranged parallel to each other, forming a waveguide distribution pattern with four output ports.

[0051] It should be noted that Figures 2A to 2D This is only an illustrative example, and technicians can select the number of waveguides 3 according to the shape of the whispering gallery cavity and specific needs.

[0052] The multi-port microcavity chaotic laser has a simple process, does not require secondary epitaxy, does not require complex active and passive integration technology, does not require hybrid integration technology, is low in cost, and has important application value in on-chip random number generation and optical information processing.

[0053] refer to Figure 3A and 3B A schematic diagram of the planar structure and a schematic diagram of the three-dimensional structure of a multi-port microcavity chaotic laser are shown. It should be noted that the figure only schematically shows one whispering gallery cavity 1.

[0054] like Figure 3A As shown, the entire laser material layer may include an N-electrode layer 101, an N-type substrate layer 102, a first limiting layer 103, an active region layer 104, a second limiting layer 105, an ohmic contact layer 106 and a P-electrode layer 107 from bottom to top. Etching is performed on the above material layers to form a whispering gallery cavity 1, an annular ohmic contact window 2 and a waveguide 3. Among them, the whispering gallery cavity 1 has a cross section of a closed polygon composed of edges and points. The whispering gallery cavity 1 is an active cavity, and its material structure is a quantum well or quantum dot structure, which can form total internal reflection of light; the annular ohmic contact window 2 is located at the upper end of the whispering gallery cavity 1 and is coaxial with the whispering gallery cavity, and is used for non-uniform injection of current to achieve nonlinear interaction of modes to generate chaotic lasers; the waveguide 3 is in contact with the outer wall of the whispering gallery cavity 1 and is used to directional output one or more chaotic lasers.

[0055] Optionally, the whispering gallery cavity 1 is a closed polygon consisting of edges and points, which is not specifically limited.

[0056] Optionally, the number of the waveguides 3 is one or more, and the multiple waveguides can be distributed on the same side of the microcavity to emit light in the same direction, or can be distributed on both sides of the microcavity to emit light in non-co-directions.

[0057] The polygonal microcavity chaotic laser has a simple process, does not require secondary epitaxy, does not require complex active and passive integration technology, does not require hybrid integration technology, is low in cost, and has important application value in on-chip random number generation and optical information processing.

[0058] refer to Figure 3A The schematic diagram of the planar structure of an arc-edge regular polygon microcavity chaotic laser is shown, where a is the side length of the original regular polygon (the regular polygon inscribed in the arc-edge regular polygon), d is the waveguide width, δ is the arc-edge deformation (i.e., the farthest distance between the arc edge and the side length of the connected square), r is the arc-edge radius, Rin is the inner diameter of the hole, h is the waveguide translation distance, and w is the width of the annular electrode window. When the cross-section of the semiconductor microcavity is an arc-edge regular polygon, the size of the arc-edge regular polygon satisfies the following relationship:

[0059]

[0060] In this embodiment, in order to increase the chaotic optical power, the size of the polygonal microcavity chaotic laser can be increased during the preparation of the laser to increase the output chaotic laser power. The shape and size of the hole in the polygonal microcavity chaotic laser can be adjusted to achieve the suppression of different high-order transverse modes. In addition, by adjusting the connection position of the waveguide 3 and the whispering gallery cavity 1, the coupling output efficiency can be optimized.

[0061] Figure 4A and 4B The fundamental mode and first-order mode mode field distribution of a dual-port microcavity chaotic laser with a side length a=20μm, deformation δ=2.17μm, waveguide width d=2μm, hole inner diameter Rin=6.5μm, and waveguide translation distance h=4√2μm obtained by using the finite element numerical calculation method according to an embodiment of the present disclosure are schematically shown. The mode wavelength of the simulated fundamental mode is 1550.119nm, and the mode field is mainly distributed in Figure 4A In the white single ring area shown, the mode wavelength of the first-order mode is 1550.092nm, and the mode field is mainly distributed in Figure 4B In the white double-ring region shown, the simulated fundamental mode and first-order mode have a mode frequency interval of 3.4 GHz, which is conducive to the generation of chaotic nonlinearity.

[0062] The waveguide and whispering gallery cavity in the dual-port microcavity chaotic laser in the embodiment of the present disclosure can be made of the same material and the same process, or can be made of different materials. The active region layer of the whispering gallery cavity has a quantum well structure or a quantum dot structure, and injecting current into it can provide optical gain.

[0063] In one example, a dual-port microcavity laser is designed based on the production of AlGaInAs / InP compressively strained multi-quantum well structure epitaxial wafers. The whispering gallery cavity is an arc-edge quadrilateral cavity with a side length of 20μm and a deformation amount of 2.17μm. The waveguide width is 2μm, and the hole is a circle with an inner diameter of 6.5μm. It is located in the arc-edge quadrilateral cavity and can be realized by standard semiconductor lithography and etching processes, or other processes. The waveguide and the arc-edge quadrilateral cavity use the same material and the same process, and the light output directions of the upper and lower waveguides are the same. In this example, the waveguide light-emitting surface adopts a natural cleavage surface, but the end face coating method is not excluded. In order to achieve non-uniform current injection, an annular ohmic contact window structure is designed in this example, which is located on the top of the arc-edge quadrilateral cavity, and the width of the annular window is 4μm.

[0064] The performance of the dual-port microcavity chaotic laser shown in this example was tested.

[0065] Figure 5The power current curves of the P1 port and the P2 port of the dual-port microcavity chaotic laser according to an embodiment of the present disclosure measured at a current of 29 mA are shown respectively, where the dotted line corresponds to the P1 port and the solid line corresponds to the P2 port. It can be seen that as the current increases, the power of the two ports is alternately at a higher level, proving that under the same current, the two ports can collect light of different properties.

[0066] Fig. 6A and 6B The chaotic signal spectra of the P1 port and the P2 port of the dual-port microcavity chaotic laser according to an embodiment of the present disclosure measured at a current of 29 mA are respectively given. It can be seen from the spectra that the spectra are broadened near 1557 nm, which manifests as a broadened chaotic spectrum.

[0067] Fig. 7A and 7B The chaotic signal spectra of ports P1 and P2 of a dual-port microcavity chaotic laser measured at 29 mA current according to an embodiment of the present disclosure are shown respectively, where the curve connected to the gray area is the noise floor of the spectrum analyzer, and the black one is the signal curve. Fig. 7A and Figure 7B It can be found that the chaotic spectrum of the P1 port has a gentle envelope peak shape near 3GHZ and 12GHz, while the spectrum of the P2 port has a more continuous fluctuation as a whole. The calculated chaotic signal bandwidths of the P1 port and the P2 port are 11.8GHz and 11.2GHz respectively.

[0068] Fig. 8A and 8B The autocorrelation function curves of the chaotic timing signals of the port P1 and the port P2 of the dual-port microcavity chaotic laser according to an embodiment of the present disclosure measured at a current of 29 mA are respectively given. Figure 8B Compared with the weak oscillation peak at the zero delay position in the autocorrelation curve, Fig. 8A There are two related oscillation peaks at the zero delay of Fig. 7A The spectrum has more spectral details corresponding to the spectrum. The comparative experiment shows that the two ports of the dual-port microcavity laser can achieve chaotic output at the same time, and the chaotic characteristics have deviations.

[0069] In summary, the present disclosure provides a multi-port microcavity chaotic laser, which realizes the output of multiple chaotic signals at the same time by designing a suitable whispering gallery microcavity and arranging multiple output waveguides. This multi-port whispering gallery cavity semiconductor spontaneous chaotic laser, which does not require external light feedback, external light injection and photoelectric feedback, has a simple process, good reliability, and low mass production cost, is conducive to the on-chip integration of post-processing in random number applications, and high-speed parallel random number generation, and also provides a variety of chaotic sources for on-chip optical computing and other purposes.

[0070] It will be appreciated by those skilled in the art that the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations and / or combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways without departing from the spirit and teachings of the present disclosure. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0071] Although the present disclosure has been shown and described with reference to specific exemplary embodiments of the present disclosure, it should be understood by those skilled in the art that various changes in form and details may be made to the present disclosure without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above-mentioned embodiments, but should be determined not only by the appended claims, but also by the equivalents of the appended claims.

Claims

1. A multi-port microcavity chaotic laser, characterized in that: include: N whispering gallery cavities (1) are arranged in sequence along a diagonal line, and two adjacent whispering gallery cavities (1) are intersecting and coupled, the cross section of the whispering gallery cavity (1) is an arc-edge polygon, the adjacent vertices of the arc-edge polygon are connected to each other to form a regular polygon, and the sides are arc edges with the same curvature, which are used to form total internal reflection of light, and N≥2; An ohmic contact window (2), wherein metal is deposited in the ohmic contact window (2) to form a P electrode layer (107), which is located at the upper end of the N whispering gallery cavities (1) and is used for non-uniform current injection to achieve nonlinear interaction of modes to generate chaotic lasers; M waveguides (3) are in contact with and connected to the outer wall of at least one of the N whispering gallery cavities (1), are parallel to one of the diagonals of the whispering gallery cavity (1), and together with the N whispering gallery cavities (1) form a symmetrical structure for directional output of chaotic lasers, where M is a multiple of 1 or 2.

2. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The center distance between two adjacent whispering gallery cavities (1) is related to the number of modes of the chaotic laser.

3. The multi-port microcavity chaotic laser according to claim 1, characterized in that: A groove is provided inwardly at the intersection of two adjacent whispering gallery cavities (1) for regulating the number of modes of the chaotic laser.

4. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The arc edge shape variable of the arc edge polygon is: Among them, a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the arc-edge radius of the arc-edge polygon, and δ is the arc-edge deformation.

5. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The whispering gallery cavity (1) and the waveguide (3) have the same structure, and comprise, from bottom to top: A first confinement layer (103), used for confining the chaotic laser light field; An active region layer (104), used for providing a gain medium for chaotic laser; A second confinement layer (105) is used to confine the chaotic laser light field; The ohmic contact layer (106) is used to reduce contact resistance.

6. The multi-port microcavity chaotic laser according to claim 5, characterized in that: Also includes: An N-type substrate (102) is disposed at the bottom of the first confinement layer (103) and is used to support the multi-port microcavity chaotic laser; The N-electrode layer (101) is disposed below the N-type substrate (102) and is used to cooperate with the P-electrode layer (107) to realize current injection of the multi-port microcavity chaotic laser.

7. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The whispering gallery cavity (1) is an active cavity, and its material structure is a quantum well or quantum dot structure.

8. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The whispering gallery cavity (1) is in the shape of a square, a hexagon, an octagon, an arc-edge quadrilateral, an arc-edge hexagon or an arc-edge octagon.

9. The multi-port microcavity chaotic laser according to claim 1, characterized in that: The light outlet of the waveguide (3) is a cleavage surface or an end surface coating structure.

10. A control method for a multi-port microcavity chaotic laser, applied to the multi-port microcavity chaotic laser according to any one of claims 1 to 9, characterized in that: include: The output power of the chaotic laser is adjusted by setting the number of whispering gallery cavities (1); the greater the number of whispering gallery cavities (1), the higher the output power of the laser; The center distance between adjacent whispering gallery cavities (1) is adjusted to regulate the number of modes of chaotic laser generated by the multi-port microcavity chaotic laser.

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