Transfer method of epitaxial layer film and application thereof

Abstract

The invention provides a transfer method of an epitaxial layer film and application thereof, and the transfer method comprises the steps of first temporary bonding, second temporary bonding, first temporary de-bonding, bonding with a target substrate, second temporary de-bonding and silicon substrate removal which are carried out in sequence, thereby realizing the transfer of the epitaxial layer film. According to the transfer method, damage to the epitaxial layer film caused by laser and stress in the transfer process can be effectively avoided, the performance of the device is improved, the service life of the device is prolonged, and the transfer method can be suitable for epitaxial layer films of different sizes and materials.

Description

Technical Field

[0001] The invention belongs to the technical field of transfer of semiconductor devices, and in particular relates to a transfer method of an epitaxial layer film and an application thereof. Background Art

[0002] With the rapid development of microelectronics and optoelectronics technology, the demand for high-performance semiconductor materials is growing. Gallium nitride (GaN), as a wide-bandgap semiconductor material, has shown great application potential in high-power, high-frequency and high-temperature electronic devices and optoelectronic devices due to its excellent electronic properties and physical stability. However, the preparation and application of GaN face some challenges, especially in substrate selection and device integration.

[0003] Traditional GaN epitaxy usually uses sapphire (Al2O3) and silicon carbide (SiC) as substrate materials. Sapphire is widely used in the LED field due to its excellent optical properties, while silicon carbide has become the preferred substrate for electronic devices due to its lattice constant and thermal conductivity similar to GaN. However, these materials also have some limitations: 1. Cost issues: The cost of sapphire and SiC substrates is relatively high, which limits the widespread application and cost-effectiveness of GaN-based devices. 2. Wafer size limitation: Compared with silicon substrates, the wafer size of sapphire and SiC substrates is smaller, which affects production efficiency and large-scale production. 3. Processing difficulty: Sapphire has a high hardness and is difficult to process, and the processing cost of SiC is also relatively high.

[0004] In response to these challenges, researchers began to explore methods for epitaxial growth and transfer of GaN on silicon (Si) substrates. Silicon substrates have the following advantages: 1. Cost-effectiveness: The production cost of silicon substrates is low, which helps to reduce overall manufacturing costs. 2. Wafer size: Silicon substrates can provide larger wafer sizes, which is conducive to improving production efficiency. 3. Thermal conductivity: The thermal conductivity of silicon is better than sapphire and close to SiC, which helps to improve the heat dissipation performance of the device. 4. Processing compatibility: The processing technology of silicon substrates is mature, which facilitates subsequent device processing and integration. 5. Environmentally friendly: The recycling and reuse of silicon materials are more mature, which is conducive to reducing environmental impact.

[0005] However, in the traditional epitaxial layer transfer process, the use of high-power lasers may cause local overheating of the material, resulting in thermal damage, and defect states caused by the interaction between the laser and the material, which will affect the performance of the device. In addition, due to the limitations of lattice mismatch and growth conditions, the epitaxial layer is prone to stress during the transfer process, which may cause material cracks or device performance degradation.

[0006] Therefore, developing a transfer method that can effectively reduce laser damage and stress damage during the transfer of epitaxial thin films is an issue that needs to be urgently addressed in this field. Summary of the invention

[0007] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a method for transferring an epitaxial thin film and its application. The transfer method can effectively avoid laser damage to the epitaxial thin film during the transfer process, and can overcome the limitations of lattice mismatch and growth conditions, avoid stress damage to the epitaxial thin film, and is conducive to the preparation of high-performance, low-cost and environmentally friendly semiconductor devices.

[0008] To achieve this object, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present invention provides a method for transferring an epitaxial thin film, the method comprising:

[0010] (1) providing a first temporary bonding layer on the surface of the first substrate, providing an epitaxial layer film on the surface of the silicon substrate, and bonding the first substrate to the silicon substrate using the first temporary bonding layer and the epitaxial layer film as bonding surfaces to obtain a first base plate;

[0011] (2) providing a second temporary bonding layer on the surface of the second substrate, using the side of the silicon substrate away from the first temporary bonding layer and the second temporary bonding layer as bonding surfaces, and bonding the first substrate obtained in step (1) to the second substrate to obtain a second substrate;

[0012] (3) debonding the second substrate obtained in step (2), removing the first temporary bonding layer and the first substrate, and obtaining a third substrate;

[0013] (4) providing an adhesive layer on the surface of the target substrate, using the epitaxial layer and the adhesive layer as bonding surfaces, and bonding the third substrate obtained in step (3) to the target substrate to obtain a fourth substrate;

[0014] (5) debonding the fourth substrate obtained in step (4), removing the second temporary bonding layer and the second substrate, and obtaining a fifth substrate;

[0015] (6) The silicon substrate is removed from the fifth substrate obtained in step (5), thereby achieving the transfer of the epitaxial layer film.

[0016] In the present invention, the transfer method realizes effective control of the stress of the epitaxial layer film by sequentially bonding the first temporary bonding layer and the second temporary bonding layer on both sides of the silicon substrate with the epitaxial layer film on the surface, thereby reducing the risk of damage caused by stress during the transfer process; and can also avoid damage caused by laser, significantly improve the performance and reliability of the device, and extend the service life of the device; and the transfer method is suitable for epitaxial layer films of different sizes and materials, has good scalability and wide application, and is conducive to promoting the further miniaturization and integration of semiconductor devices to meet the growing market demand.

[0017] Preferably, in step (1), the first substrate comprises a silicon wafer.

[0018] In the present invention, the silicon wafer includes but is not limited to a 4-inch silicon wafer, a 6-inch silicon wafer, an 8-inch silicon wafer, a 12-inch silicon wafer, etc.

[0019] Preferably, the thickness of the first temporary bonding layer is 2 to 80 μm, for example, it can be 2 μm, 5 μm, 7 μm, 8 μm, 9 μm, 10 μm, 12 μm, 14 μm, 16 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, etc.

[0020] Preferably, the thickness uniformity of the first temporary bonding layer is ≤5%, for example, it may be 0%, 1%, 2%, 3%, 4%, 5%, etc.

[0021] Preferably, the material of the first temporary bonding layer includes temporary bonding glue and / or temporary bonding wax.

[0022] In the present invention, the material of the first temporary bonding layer is preferably a hot slip debonding temporary bonding material. The use of hot slip debonding temporary bonding material can avoid laser damage to the epitaxial layer film; the material of the first temporary bonding layer is preferably a material having a similar elastic modulus, thermal expansion coefficient and Poisson's ratio to the silicon substrate with an epitaxial layer film disposed on the surface, illustratively including but not limited to the hot slip glue of Shenzhen Huaxun Semiconductor Materials Co., Ltd.: WLP TB1120, WLPTB130, WLP TB140, etc.; hot slip wax: WLP TB1300, WLP TB1310, etc.

[0023] Preferably, the method of providing the first temporary bonding layer on the surface of the first substrate in step (1) comprises: coating the material of the first temporary bonding layer on the surface of the first substrate, and curing or leveling the material to obtain the first temporary bonding layer.

[0024] In the present invention, when the material is bonding glue, it is a curing step; when the material is bonding wax, it is a leveling step.

[0025] Preferably, the curing or leveling temperature is 80-160°C, for example, it can be 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 130°C, 140°C, 150°C, 160°C, etc.; the time is 1-30min, for example, it can be 1min, 2min, 4min, 6min, 8min, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min, 26min, 28min, 30min, etc.

[0026] In the present invention, the first temporary bonding layer can provide sufficient mechanical support for the silicon-based epitaxial layer film, and can also release stress in advance to facilitate subsequent thinning, polishing, high-temperature and high-pressure bonding, debonding, cleaning and other processes, thereby avoiding stress damage to the epitaxial layer film caused by the aforementioned processes and improving the processing safety of the device.

[0027] Preferably, the bonding temperature in step (1) is 100-150°C, for example, it can be 100°C, 102°C, 104°C, 106°C, 108°C, 110°C, 112°C, 114°C, 116°C, 118°C, 120°C, 122°C, 124°C, 126°C, 128°C, 130°C, 132°C, 134°C, 136°C, 138°C, 140°C, 142°C, 144°C, 146°C, 148°C, 150°C, etc.

[0028] Preferably, the bonding pressure in step (1) is 0 to 2000 Pa, for example, 0 Pa, 50 Pa, 80 Pa, 100 Pa, 120 Pa, 150 Pa, 180 Pa, 200 Pa, 250 Pa, 300 Pa, 350 Pa, 400 Pa, 450 Pa, 500 Pa, 550 Pa, 600 Pa, 650 Pa, 700 Pa, 750 Pa, 800 Pa, 850 Pa, 900 Pa, 950 Pa , 1000Pa, 1050Pa, 1100Pa, 1150Pa, 1200Pa, 1250Pa, 1300Pa, 1350Pa, 1400Pa, 1450Pa, 1500Pa, 1550Pa, 1600Pa, 1650Pa, 1700Pa, 1750Pa, 1800Pa, 1850Pa, 1900Pa, 1950Pa, 2000Pa, etc., more preferably 500-1300Pa. Preferably, the bonding time in step (1) is 1-10min, for example, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc.

[0029] Preferably, the bonding vacuum degree in step (1) is less than 10 Pa, for example, it can be 1 Pa, 2 Pa, 3 Pa, 4 Pa, 5 Pa, 6 Pa, 7 Pa, 8 Pa, 9 Pa, etc.

[0030] In the present invention, the bonding in step (1) adopts a specific process, which can achieve low-stress bonding of the epitaxial layer thin film bonding pair, reduce wafer warping, and reduce stress damage to the epitaxial layer thin film.

[0031] Preferably, after the bonding in step (1), the method further comprises cleaning, thinning and / or polishing the silicon substrate.

[0032] In the present invention, the cleaning includes cleaning using a plasma device.

[0033] Preferably, the thickness of the silicon substrate thinned to a thickness of 50-100 μm, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

[0034] Preferably, in step (2), the second substrate comprises at least one of silicon carbide, sapphire and glass.

[0035] Preferably, the second temporary bonding layer comprises a laser release layer and a second adhesive layer which are arranged in sequence, the laser release layer is stacked on the second substrate; and the second adhesive layer is bonded to a side of the silicon substrate away from the first temporary bonding layer.

[0036] Preferably, the thickness of the laser release layer is 200nm to 5μm, for example, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 800nm, 900nm, 1μm, 2μm, 3μm, 4μm, 5μm, etc.

[0037] Preferably, the thickness uniformity of the laser release layer is ≤20%, for example, it may be 0%, 2%, 4%, 6%, 8%, 10%, 12%, 14%, 16%, 18%, 20%, etc.

[0038] In the present invention, the material of the laser release layer preferably has a similar elastic modulus, thermal expansion coefficient and Poisson's ratio to the silicon substrate with an epitaxial layer thin film disposed on the surface, and exemplary materials include but are not limited to WLP LB210, WLP RL420, WLP LB230, and WLP LB260 of Shenzhen Huaxun Semiconductor Materials Co., Ltd.

[0039] Preferably, the thickness of the second adhesive layer is 2 to 80μm, for example, it can be 2μm, 4μm, 6μm, 8μm, 10μm, 12μm, 14μm, 16μm, 18μm, 20μm, 22μm, 24μm, 26μm, 28μm, 30μm, 32μm, 34μm, 36μm, 38μm, 40μm, 42μm, 44μm, 46μm, 48μm, 50μm, 52μm, 55μm, 58μm, 60μm, 62μm, 65μm, 68μm, 70μm, 72μm, 75μm, 78μm, 80μm and the like.

[0040] Preferably, the thickness uniformity of the second adhesive layer is ≤10%, for example, it may be 0%, 2%, 4%, 6%, 8%, 10%, etc.

[0041] Preferably, the warpage after bonding in step (1) or step (2) is less than 50 μm, and the total thickness deviation of the bonding pair is less than 10 μm.

[0042] In the present invention, the material of the second adhesive layer includes a temporary bonding material, illustratively including but not limited to WLP TB4130, WLP TB4170, WLP TB4171, WLP TB4172, WLPTB4180, etc. produced by Shenzhen Huaxun Semiconductor Materials Co., Ltd.

[0043] Preferably, the method of setting a second temporary bonding layer on the surface of the second substrate in step (2) comprises: coating a laser release layer material on the surface of the second substrate, and first curing to obtain a laser release layer; and coating a second adhesive layer material on the surface of the laser release layer, and second curing to obtain the second temporary bonding layer.

[0044] In the present invention, the second temporary bonding layer can be used as a stress buffer layer, which can reduce stress damage to the epitaxial layer film during the transfer process.

[0045] Preferably, the first curing comprises curing through the steps of first heat preservation, temperature increase, second heat preservation and temperature reduction.

[0046] Preferably, the temperature of the first insulation is 70-150°C, for example, it can be 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, etc.; the time is 1-10min, for example, it can be 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc.

[0047] Preferably, the heating rate is 3 to 40°C / min, for example, 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min, 15°C / min, 20°C / min, 25°C / min, 30°C / min, 35°C / min, 40°C / min, etc.

[0048] Preferably, the temperature of the second insulation is 200-400°C, for example, it can be 200°C, 210°C, 220°C, 230°C, 240°C, 260°C, 280°C, 300°C, 320°C, 340°C, 360°C, 380°C, 400°C, etc.; the time is 10-80min, for example, it can be 10min, 20min, 30min, 40min, 50min, 60min, 70min, 80min, etc.

[0049] Preferably, the temperature is lowered to below 150°C, for example, it can be 20°C, 40°C, 60°C, 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, etc.; the cooling rate is 5-20°C / min, for example, it can be 5°C / min, 6°C / min, 8°C / min, 10°C / min, 12°C / min, 14°C / min, 16°C / min, 18°C / min, 20°C / min, etc.

[0050] Preferably, the second curing includes multi-temperature zone gradient curing, more preferably includes at least a first gradient and a second gradient.

[0051] Preferably, the insulation temperature of the first gradient is 70-150°C, for example, it can be 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, etc.; the time is 1-10min, for example, it can be 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc.

[0052] Preferably, the rate of temperature rise from the first gradient to the second gradient is 3 to 40°C / min, for example, it can be 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min, 15°C / min, 20°C / min, 25°C / min, 30°C / min, 35°C / min, 40°C / min, etc.

[0053] Preferably, the insulation temperature of the second gradient is 180-250°C, for example, it can be 180°C, 190°C, 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, etc.; the time is 3-20min, for example, it can be 3min, 5min, 8min, 10min, 12min, 15min, 18min, 20min, etc.

[0054] Preferably, the temperature is lowered to below 150°C after the second gradient, for example, it can be 20°C, 40°C, 60°C, 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, etc.; the cooling rate is 5-20°C / min, for example, it can be 5°C / min, 6°C / min, 8°C / min, 10°C / min, 12°C / min, 14°C / min, 16°C / min, 18°C / min, 20°C / min, etc.

[0055] In the present invention, the coating methods for obtaining the first temporary bonding layer and the second temporary bonding layer independently include but are not limited to spin coating; the curing conditions can be selected according to the temporary bonding material, and the curing is complete; after curing, it is cooled to room temperature for use.

[0056] Preferably, the bonding temperature in step (2) is 180-250°C, for example, it may be 180°C, 182°C, 185°C, 188°C, 190°C, 192°C, 195°C, 198°C, 200°C, 202°C, 204°C, 206°C, 208°C, 210°C, 212°C, 214°C, 216°C, 218°C, 220°C, 224°C, 226°C, 228°C, 230°C, 232°C, 234°C, 236°C, 238°C, 240°C, 242°C, 244°C, 246°C, 248°C, 250°C, etc.

[0057] Preferably, the bonding pressure in step (2) is 15000-300000 Pa, for example, it can be 15000Pa, 20000Pa, 30000Pa, 40000Pa, 50000Pa, 60000Pa, 70000Pa, 80000Pa, 90000Pa, 100000Pa, 120000Pa, 140000Pa, 160000Pa, 180000Pa, 200000Pa, 220000Pa, 240000Pa, 260000Pa, 280000Pa, 300000Pa, etc., and more preferably 50000-150000Pa.

[0058] Preferably, the bonding time in step (2) is 5 to 20 min, for example, it can be 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, etc.

[0059] Preferably, the bonding vacuum degree in step (2) is less than 10 Pa, for example, it may be 1 Pa, 2 Pa, 3 Pa, 4 Pa, 5 Pa, 6 Pa, 7 Pa, 8 Pa, 9 Pa, etc.

[0060] Preferably, the debonding method in step (3) comprises thermal slip debonding.

[0061] Preferably, the debonding temperature in step (3) is 100-200°C, for example, 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, etc.

[0062] Preferably, the debonding slip speed in step (3) is less than 2 mm / s, for example, it can be 0.2 mm / s, 0.4 mm / s, 0.6 mm / s, 0.8 mm / s, 1 mm / s, 1.2 mm / s, 1.4 mm / s, 1.6 mm / s, 1.8 mm / s, etc.

[0063] Preferably, the debonding in step (3) further includes a cleaning step.

[0064] In the present invention, the cleaning includes spin coating cleaning or immersion cleaning to remove the residual material of the first temporary bonding layer, and the cleaning can be carried out using a corresponding cleaning agent, followed by water washing and drying. Preferably, the debonding method in step (5) includes laser debonding.

[0065] Preferably, the laser energy for debonding in step (5) is ≥120 mj / cm 2 , for example, 120 mj / cm 2 、140mj / cm 2 、160mj / cm 2 、180mj / cm 2 、200mj / cm 2 、240mj / cm 2 、260mj / cm 2 、280mj / cm 2 、300mj / cm 2 、350mj / cm 2 、400mj / cm 2 、450mj / cm 2 、500mj / cm 2 、550mj / cm 2 、600mj / cm 2 、650mj / cm 2 、700mj / cm 2 、750mj / cm 2 、800mj / cm 2 、850mj / cm 2 、900mj / cm 2 、950mj / cm 2 、1000mj / cm 2 etc., preferably 120 to 800 mj / cm 2 .

[0066] Preferably, the debonding laser in step (5) includes visible light and / or ultraviolet light.

[0067] In the present invention, the laser debonding mode includes a pulse mode and / or a flat-top mode; and the pulse width is less than 1 mm.

[0068] In the present invention, the second temporary bonding layer is debonded by laser, and the laser debonding is controlled by a specific process, which can efficiently separate the epitaxial layer film and reduce the stress damage and laser damage of the epitaxial layer film; too much laser energy will damage the silicon substrate or the epitaxial layer film; the use of infrared light as the laser will also damage the silicon substrate or the epitaxial layer film.

[0069] Preferably, the debonding in step (5) further includes a cleaning step.

[0070] In the present invention, in step (5), the cleaning includes spin coating cleaning or immersion cleaning, so as to remove the residual materials of the second adhesive layer and the laser release layer. The cleaning can be carried out using a corresponding cleaning agent, followed by water washing and drying.

[0071] In the present invention, the cleaning agent includes but is not limited to TBR2 and Remover3 produced by Shenzhen Huaxun Semiconductor Materials Co., Ltd.

[0072] Preferably, the method for removing the silicon substrate in step (6) includes plasma etching and / or chemical etching.

[0073] Preferably, the gas of the plasma etching method includes gas A and gas B; the gas A includes at least one of carbon tetrafluoride, sulfur hexafluoride or octafluorocyclobutane; the gas B includes oxygen or a mixed gas of oxygen and at least one of argon or helium.

[0074] In the present invention, the volume ratio of gas A to gas B is (3-5):1, for example, it can be 3:1, 3.5:1, 4:1, 4.5:1, 5:1, etc.

[0075] In the present invention, plasma etching and chemical etching are preferably used; plasma etching is used until the edge of the epitaxial layer film is exposed, and then chemical etching is used.

[0076] Preferably, the reagent of the chemical etching method includes at least one of hydrofluoric acid, nitric acid or water, preferably a mixture of hydrofluoric acid, nitric acid and water, and the volume ratio of hydrofluoric acid, nitric acid and water is (0.5-1.5):1, wherein the specific value in (0.5-1.5) can be, for example, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, etc.

[0077] Preferably, the corrosion rate of the chemical etching method is 0.2 to 2.2 μm / min, for example, it can be 0.2 μm / min, 0.4 μm / min, 0.6 μm / min, 0.8 μm / min, 1 μm / min, 1.2 μm / min, 1.4 μm / min, 1.6 μm / min, 1.8 μm / min, 2 μm / min, 2.2 μm / min, etc.

[0078] Preferably, the epitaxial layer thin film includes at least one of a gallium nitride thin film, a silicon dioxide thin film, a silicon nitride thin film, and a metal thin film.

[0079] As a preferred technical solution of the present invention, the transfer method comprises:

[0080] (1) coating a first temporary bonding layer material with a thickness of 2 to 80 μm and a thickness uniformity of ≤5% on the surface of a first substrate, and curing the material at 80 to 160° C. for 1 to 30 min to obtain the first temporary bonding layer; arranging an epitaxial layer film on the surface of a silicon substrate, using the first temporary bonding layer and the epitaxial layer film as bonding surfaces, bonding the first substrate to a silicon substrate at a temperature of 100 to 150° C., a pressure of 0 to 2000 Pa, and a vacuum degree of <10 Pa for 1 to 10 min, cleaning the silicon substrate, and thinning the silicon substrate to 50 to 100 μm to obtain a first substrate;

[0081] (2) coating a laser release layer material with a thickness of 200 nm to 5 μm and a thickness uniformity of ≤20% on the surface of the second substrate, maintaining the temperature at 70 to 150° C. for 1 to 10 min, then heating the temperature to 200 to 400° C. at a heating rate of 3 to 40° C. / min, maintaining the temperature for 10 to 80 min, then cooling the temperature to below 150° C. at a rate of 5 to 20° C. / min, and cooling to obtain a laser release layer; coating a second adhesive layer material with a thickness of 2 to 80 μm and a thickness uniformity of ≤10% on the surface of the laser release layer, and performing multi-temperature zone gradient curing to obtain the second temporary bonding layer; The multi-temperature zone gradient curing at least comprises keeping the temperature at 70-150° C. for 1-10 min, heating the temperature to 180-250° C. at a heating rate of 3-40° C. / min, keeping the temperature for 3-20 min, and then reducing the temperature to below 150° C. at a rate of 5-20° C. / min; using the side of the silicon substrate away from the first temporary bonding layer and the second adhesive layer as bonding surfaces, bonding the first substrate obtained in step (1) with the second substrate at a temperature of 180-250° C., a pressure of 15000-300000 Pa, and a vacuum degree of less than 10 Pa for 5-20 min to obtain the second substrate;

[0082] (3) performing thermal sliding debonding on the second substrate obtained in step (2), cleaning, removing the first temporary bonding layer and the first substrate, and obtaining a third substrate;

[0083] (4) providing an adhesive layer on the surface of the target substrate, using the epitaxial layer and the adhesive layer as bonding surfaces, and bonding the third substrate obtained in step (3) to the target substrate to obtain a fourth substrate;

[0084] (5) The fourth substrate obtained in step (4) is subjected to a laser energy of ≥120 mj / cm 2 performing laser debonding under conditions of, wherein the debonding laser includes visible light and / or ultraviolet light; cleaning to remove the second temporary bonding layer and the second substrate to obtain a fifth substrate;

[0085] (6) The fifth substrate obtained in step (5) is subjected to plasma etching and / or chemical etching to remove the silicon substrate, thereby achieving the transfer of the epitaxial layer film.

[0086] In the present invention, the silicon-based epitaxial layer film can be purchased from the market or prepared by conventional methods.

[0087] In the present invention, in step (4), the material and thickness of the adhesive layer can be selected according to actual conditions, and the present invention does not limit it. It can achieve permanent bonding between the epitaxial layer film and the target substrate. The curing conditions of the adhesive layer depend on the material, and it only needs to be completely cured. The material of the target substrate includes but is not limited to glass. The bonding process parameters depend on the selected adhesive layer material, and can be high-temperature curing, high-temperature and high-pressure curing, etc.

[0088] In the present invention, according to actual needs or to facilitate the process after transfer, different processes can be performed on the side of the target substrate in the fourth substrate away from the glue layer, such as glue curing, photolithography development, electroplating, physical and chemical deposition, metal corrosion, organic corrosion, high-voltage permanent bonding, etc.; illustratively, the side of the target substrate away from the glue layer can be surface treated using a plasma surface treatment device, and then a copper block can be embedded to align it; then pre-bonding is performed under vacuum, room temperature, and a pressure of 1 to 25 kN, and then high-temperature annealing is performed at 220°C to 350°C for 3 to 5 minutes.

[0089] In a second aspect, the present invention provides an application of the transfer method according to the first aspect in the preparation of a semiconductor device.

[0090] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0091] Compared with the prior art, the present invention has the following beneficial effects:

[0092] The epitaxial layer film transfer method provided by the present invention realizes effective control of the epitaxial layer film stress by sequentially bonding a first temporary bonding layer and a second temporary bonding layer on both sides of a silicon substrate provided with the epitaxial layer film, thereby reducing the risk of damage caused by stress during the transfer process; and can also avoid damage caused by laser, significantly improve the performance and reliability of the device, and extend the service life of the device; and the transfer method is suitable for epitaxial layer films of different sizes and materials, has good scalability, and is widely used, which helps to promote the further miniaturization and integration of semiconductor devices and meet the growing market demand. BRIEF DESCRIPTION OF THE DRAWINGS

[0093] Figure 1 It is a schematic structural diagram of a silicon substrate with an epitaxial thin film disposed on the surface in Example 1 of the present invention;

[0094] Wherein: 1-silicon substrate; 2-GaN epitaxial layer film;

[0095] Figure 2 is a schematic structural diagram of the first substrate in Example 1 of the present invention;

[0096] Wherein: 1-silicon substrate; 2-GaN epitaxial layer film; 3-first temporary bonding layer; 4-first substrate;

[0097] Figure 3 is a schematic structural diagram of the second substrate in Example 1 of the present invention;

[0098] Among them, 1-silicon substrate; 2-GaN epitaxial layer film; 3-first temporary bonding layer; 4-first substrate; 5-second temporary bonding layer; 6-second substrate. DETAILED DESCRIPTION

[0099] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0100] The materials used in the present invention can be purchased from the market or prepared by conventional methods. Unless otherwise specified, the materials used in the present invention are as follows:

[0101] First temporary bonding layer material: WLP TB1120 from Shenzhen Huaxun Semiconductor Materials Co., Ltd.;

[0102] Laser release material: WLP LB210 from Shenzhen Huaxun Semiconductor Materials Co., Ltd.;

[0103] Second bonding layer material: WLP TB4130 from Shenzhen Huaxun Semiconductor Materials Co., Ltd.

[0104] The silicon substrate with an epitaxial film on the surface is as follows: Figure 1 As shown, it includes a silicon substrate 1 and a GaN epitaxial layer film 2; the silicon substrate is an 8-inch silicon wafer, and the thickness of the GaN epitaxial layer film is 10 μm.

[0105] In the present invention, the thickness uniformity can be obtained by comparing the maximum thickness and the minimum thickness of the coating layer; thickness uniformity=(maximum thickness-minimum thickness) / maximum thickness×100%.

[0106] Example 1

[0107] This embodiment provides a method for transferring a GaN epitaxial layer thin film, which specifically includes the following steps:

[0108] (1) Spin coating WLP TB1120 with a thickness of 10 μm and a thickness uniformity of 3% on the surface of an 8-inch silicon wafer, and curing at 110° C. for 10 min to obtain a first substrate with a first temporary bonding layer on the surface; using the first temporary bonding layer and the epitaxial layer film as bonding surfaces, bonding the silicon substrate with the epitaxial layer film on the surface to the first substrate at 120° C., a pressure of 955 Pa, and a vacuum degree of 5 Pa for 5 min, cleaning the silicon substrate with a plasma device, and thinning it to 70 μm to obtain a first substrate;

[0109] (2) coating the surface of the silicon carbide substrate with WLP LB210 having a thickness of 500 nm and a thickness uniformity of 10%, maintaining the temperature at 115°C for 5 min, then heating the temperature to 350°C at a heating rate of 5°C / min, maintaining the temperature for 30 min, then cooling the temperature to 120°C at a rate of 10°C / min, and cooling the temperature to room temperature to obtain a laser release layer; coating the surface of the laser release layer with WLP having a thickness of 16 μm and a thickness uniformity of 5% TB4130, keep the temperature at 115°C for 5 minutes, then increase the temperature to 200°C at a heating rate of 5°C / min, keep the temperature for 10 minutes, then reduce the temperature to 120°C at a rate of 10°C / min, and cool to room temperature to obtain a second bonding layer, that is, to obtain a second substrate with a second temporary bonding layer on the surface; with the side of the silicon substrate away from the first temporary bonding layer and the second bonding layer as the bonding surface, the first substrate obtained in step (1) and the second substrate are bonded at 215°C, a pressure of 95541Pa, and a vacuum of 6Pa for 10 minutes to obtain a second substrate;

[0110] (3) Debonding the second substrate obtained in step (2) using a hot sliding debonding device, wherein the temperature of the hot sliding debonding device is: the upper hot plate is 150° C., the lower hot plate is 150° C., and the sliding speed is 1 mm / s; then, the substrate is soaked and cleaned with a cleaning agent (acetone) until no first temporary bonding layer remains on the surface, washed with deionized water, and dried, thereby removing the first temporary bonding layer and the first substrate, to obtain a third substrate;

[0111] (4) a glue layer (the material is WLPTB5160 produced by Shenzhen Huaxun Semiconductor Materials Co., Ltd., with a thickness of 30 μm) is provided on the surface of the target substrate, and the epitaxial layer film and the glue layer are used as bonding surfaces. The third substrate obtained in step (3) is bonded to the target substrate at 220° C., a pressure of 31847 Pa, and a vacuum of 6 Pa for 10 min to obtain a fourth substrate;

[0112] (5) The fourth substrate obtained in step (4) is debonded by ultraviolet laser (wavelength 355 nm), wherein the laser energy is 400 mj / cm 2 , the laser mode is a pulse mode, and the pulse width is less than 1 mm; after debonding, a cleaning agent (Hua Xun TBR2) is used for immersion cleaning until no second temporary bonding layer remains on the surface, deionized water washing, and drying are performed to remove the second temporary bonding layer and the silicon carbide substrate to obtain a fifth substrate;

[0113] (6) The fifth substrate obtained in step (5) is first subjected to plasma etching until the edge of the GaN epitaxial layer film is exposed, and then the silicon substrate is removed by chemical etching, thereby realizing the transfer of the epitaxial layer film; wherein the plasma etching method uses carbon tetrafluoride and oxygen in a volume ratio of 4:1; the chemical etching method uses hydrofluoric acid, nitric acid and water in a volume ratio of 1:1:1, and the etching rate is 1 μm / min.

[0114] In the present invention, the structural schematic diagram of the first substrate is as follows Figure 2 As shown, it includes a silicon substrate 1, a GaN epitaxial layer film 2, a first temporary bonding layer 3 and a first substrate 4; the structural schematic diagram of the second substrate is shown in Figure 3 As shown, it includes a silicon substrate 1, a GaN epitaxial layer film 2, a first temporary bonding layer 3, a first substrate 4, a second temporary bonding layer 5 and a second substrate 6.

[0115] Example 2

[0116] This embodiment provides a method for transferring a GaN epitaxial layer thin film, which specifically includes the following steps:

[0117] (1) Spin coating WLP TB1120 with a thickness of 15 μm and a thickness uniformity of 1% on the surface of an 8-inch silicon wafer, and curing at 120° C. for 5 min to obtain a first substrate with a first temporary bonding layer on the surface; using the first temporary bonding layer and the epitaxial layer film as bonding surfaces, bonding the silicon substrate with the epitaxial layer film on the surface to the first substrate at 135° C., a pressure of 1115 Pa, and a vacuum of 8 Pa for 3 min, cleaning the silicon substrate with a plasma device, and thinning it to 50 μm to obtain a first substrate;

[0118] (2) coating the surface of the silicon carbide substrate with WLP LB210 having a thickness of 600 nm and a thickness uniformity of 8%, maintaining the temperature at 125°C for 3 min, then heating the temperature to 390°C at a heating rate of 8°C / min, maintaining the temperature for 20 min, then cooling the temperature to 130°C at a rate of 15°C / min, and cooling the temperature to room temperature to obtain a laser release layer; coating the surface of the laser release layer with WLP having a thickness of 20 μm and a thickness uniformity of 2% TB4130, keep warm at 125°C for 3 minutes, then heat to 180°C at a heating rate of 8°C / min, keep warm for 20 minutes, then reduce the temperature to 130°C at a rate of 15°C / min, and cool to room temperature to obtain a second bonding layer, that is, a silicon carbide substrate with a second temporary bonding layer on the surface; with the side of the silicon substrate away from the first temporary bonding layer and the second bonding layer as the bonding surface, the first substrate obtained in step (1) is bonded with the silicon carbide substrate at 225°C, a pressure of 63694Pa, ​​and a vacuum of 5Pa for 15 minutes to obtain a second substrate;

[0119] (3) Debonding the second substrate obtained in step (2) using a hot sliding debonding device, wherein the temperature of the hot sliding debonding device is: the upper hot plate is 140° C., the lower hot plate is 160° C., and the sliding speed is 0.5 mm / s; then, the substrate is soaked and cleaned with a cleaning agent (acetone) until no first temporary bonding layer remains on the surface, washed with deionized water, and dried, thereby removing the first temporary bonding layer and the first substrate, to obtain a third substrate;

[0120] (4) providing an adhesive layer on the surface of the target substrate, using the epitaxial layer and the adhesive layer as bonding surfaces, and bonding the third substrate obtained in step (3) to the target substrate to obtain a fourth substrate;

[0121] (5) The fourth substrate obtained in step (4) is debonded by ultraviolet laser (wavelength 355 nm), wherein the laser energy is 300 mj / cm 2 , the laser mode is a pulse mode, and the pulse width is less than 1 mm; after debonding, a cleaning agent (Hua Xun TBR2) is used for immersion cleaning until no second temporary bonding layer remains on the surface, deionized water washing, and drying, thereby removing the second temporary bonding layer and the silicon carbide substrate to obtain a fifth substrate;

[0122] (6) The fifth substrate obtained in step (5) is first subjected to plasma etching until the edge of the GaN epitaxial layer film is exposed, and then the silicon substrate is removed by chemical etching, thereby realizing the transfer of the epitaxial layer film; wherein the plasma etching method uses carbon tetrafluoride and oxygen in a volume ratio of 4:1; the chemical etching method uses hydrofluoric acid, nitric acid and water in a volume ratio of 1:1:1, and the etching rate is 1 μm / min.

[0123] Example 3

[0124] This embodiment provides a GaN epitaxial film transfer method, which differs from the embodiment 1 only in that, in step (1), the silicon substrate with the epitaxial film disposed on the surface is bonded to the first substrate at 105° C., a pressure of 796 Pa, and a vacuum of 5 Pa for 8 min; in step (2), the first substrate obtained in step (1) is bonded to the silicon carbide substrate at 205° C., a pressure of 127388 Pa, and a vacuum of 5 Pa for 6 min; in step (5), the laser energy is 200 mj / cm 2 ; Other steps and process parameters are the same as those in Example 1.

[0125] Example 4

[0126] This embodiment provides a method for transferring a GaN epitaxial layer film, which differs from Embodiment 1 only in that, in step (1), a silicon substrate with an epitaxial layer film disposed on its surface is bonded to a first substrate at 95° C., 1433 Pa, and a vacuum degree of 5 Pa for 15 minutes; the other steps and process parameters are the same as those in Embodiment 1.

[0127] Example 5

[0128] This embodiment provides a method for transferring a GaN epitaxial layer film, which differs from Embodiment 1 only in that, in step (1), a silicon substrate with an epitaxial layer film disposed on its surface is bonded to a first substrate at 160° C., a pressure of 478 Pa, and a vacuum of 5 Pa for 0.5 min; the other steps and process parameters are the same as those in Embodiment 1.

[0129] Example 6

[0130] This embodiment provides a method for transferring a GaN epitaxial layer thin film, which differs from Embodiment 1 only in that, in step (2), the first substrate obtained in step (1) is bonded to a silicon carbide substrate at 190° C., a pressure of 191083 Pa, and a vacuum of 5 Pa for 25 minutes; the other steps and process parameters are the same as those in Embodiment 1.

[0131] Example 7

[0132] This embodiment provides a method for transferring a GaN epitaxial layer thin film, which differs from Embodiment 1 only in that, in step (2), the first substrate obtained in step (1) is bonded to a silicon carbide substrate at 270° C., a pressure of 15924 Pa, and a vacuum of 5 Pa for 4 minutes; the other steps and process parameters are the same as those in Embodiment 1.

[0133] Example 8

[0134] This embodiment provides a GaN epitaxial thin film transfer method, which differs from the embodiment 1 only in that in step (5), the laser energy is 1400 mj / cm2 ; Other steps and process parameters are the same as those in Example 1.

[0135] Comparative Example 1

[0136] This comparative example provides a method for transferring a GaN epitaxial layer thin film, which differs from Example 1 only in that step (2) and step (5) are not performed, and the order of step (3), step (4), and step (6) is reversed, that is, the transfer method includes the following steps: (1) bonding, step (6) etching away the silicon substrate, step (4) transferring to a target substrate, and step (3) hot sliding debonding to remove the first temporary bonding layer and the first substrate, thereby achieving the transfer of the GaN epitaxial layer thin film, and the other steps and process parameters are the same as those in Example 1.

[0137] Performance Testing

[0138] The bonding effect and transfer effect in the transfer method provided in Examples 1 to 8 and Comparative Example 1 were visually observed; wherein, there were no bubbles on the bonding surface, and reasonable warping (<50 μm) indicated good bonding effect; after transfer, the film was intact and crack-free, indicating good transfer effect; the degree of bonding warping was tested using a film stress meter.

[0139] The specific test results are shown in Table 1:

[0140] Table 1

[0141] Bonding effect Transfer Effect Example 1 No bubbles, reasonable warping The film is intact without cracks Example 2 No bubbles, reasonable warping The film is intact without cracks Example 3 No bubbles, reasonable warping The film is intact without cracks Example 4 Bubbles Film fragmentation Example 5 Bubbles Film fragmentation Example 6 Bubbles Film fragmentation Example 7 Excessive warping Film fragmentation Example 8 No bubbles, reasonable warping Film fragmentation Comparative Example 1 No bubbles, reasonable warping Film fragmentation

[0142] As can be seen from Table 1, the epitaxial layer film transfer method provided by the present invention can effectively avoid or reduce the damage to the epitaxial layer film caused by laser and stress during the transfer process by sequentially bonding the first temporary bonding layer and the second temporary bonding layer on both sides of the silicon substrate provided with the epitaxial layer film, and efficiently and losslessly complete the transfer of the epitaxial layer film, which is beneficial to improving the performance of the device and extending the service life of the device; and the transfer method has good universality and can be applied to epitaxial layer films of different sizes and materials, which helps to promote the further miniaturization and integration of semiconductor devices and meet the growing market demand.

[0143] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for transferring an epitaxial thin film, characterized in that: The transfer method includes: (1) providing a first temporary bonding layer on the surface of the first substrate, providing an epitaxial layer film on the surface of the silicon substrate, and bonding the first substrate to the silicon substrate using the first temporary bonding layer and the epitaxial layer film as bonding surfaces to obtain a first base plate; (2) providing a second temporary bonding layer on the surface of the second substrate, using the side of the silicon substrate away from the first temporary bonding layer and the second temporary bonding layer as bonding surfaces, and bonding the first substrate obtained in step (1) to the second substrate to obtain a second substrate; (3) debonding the second substrate obtained in step (2), removing the first temporary bonding layer and the first substrate, and obtaining a third substrate; (4) providing an adhesive layer on the surface of the target substrate, using the epitaxial layer and the adhesive layer as bonding surfaces, and bonding the third substrate obtained in step (3) to the target substrate to obtain a fourth substrate; (5) debonding the fourth substrate obtained in step (4), removing the second temporary bonding layer and the second substrate, and obtaining a fifth substrate; (6) The silicon substrate is removed from the fifth substrate obtained in step (5), thereby achieving the transfer of the epitaxial layer film.

2. The transfer method according to claim 1, characterized in that: Step (1) The first substrate comprises a silicon wafer; Preferably, the thickness of the first temporary bonding layer is 2 to 80 μm; Preferably, the thickness uniformity of the first temporary bonding layer is ≤5%; Preferably, the material of the first temporary bonding layer includes temporary bonding glue and / or temporary bonding wax; Preferably, the method of providing the first temporary bonding layer on the surface of the first substrate in step (1) comprises: coating the material of the first temporary bonding layer on the surface of the first substrate, and curing or leveling the material to obtain the first temporary bonding layer; Preferably, the curing or leveling temperature is 80-160° C. and the time is 1-30 min.

3. The transfer method according to claim 1 or 2, characterized in that: The bonding temperature in step (1) is 100-150° C. Preferably, the bonding pressure in step (1) is 0 to 2000 Pa, more preferably 500 to 1300 Pa; Preferably, the bonding time in step (1) is 1 to 10 minutes; Preferably, the bonding vacuum degree in step (1) is less than 10 Pa; Preferably, after the bonding in step (1), the method further comprises cleaning, thinning and / or polishing the silicon substrate; Preferably, the silicon substrate is thinned to a thickness of 50-100 μm.

4. The transfer method according to any one of claims 1 to 3, characterized in that: Step (2) The second substrate includes at least one of silicon carbide, sapphire, and glass; Preferably, the second temporary bonding layer comprises a laser release layer and a second adhesive layer which are arranged in sequence, the laser release layer is stacked with the second substrate; the second adhesive layer is bonded to a side of the silicon substrate away from the first temporary bonding layer; Preferably, the thickness of the laser release layer is 200 nm to 5 μm; Preferably, the thickness uniformity of the laser release layer is ≤20%; Preferably, the thickness of the second adhesive layer is 2 to 80 μm; Preferably, the thickness uniformity of the second adhesive layer is ≤10%; Preferably, the warpage after bonding in step (1) or step (2) is less than 50 μm, and the total thickness deviation of the bonding pair is less than 10 μm.

5. The transfer method according to claim 4, characterized in that: The method of step (2) providing a second temporary bonding layer on the surface of the second substrate comprises: coating a laser release layer material on the surface of the second substrate, first curing to obtain a laser release layer; coating a second adhesive layer material on the surface of the laser release layer, second curing to obtain the second temporary bonding layer; Preferably, the first curing comprises curing through the steps of first heat preservation, temperature increase, second heat preservation, and temperature reduction; Preferably, the first insulation temperature is 70-150° C., and the time is 1-10 min; Preferably, the heating rate is 3-40°C / min; Preferably, the second insulation temperature is 200-400°C and the time is 10-80 minutes; Preferably, the temperature is lowered to below 150°C at a rate of 5 to 20°C / min; Preferably, the second curing comprises multi-temperature zone gradient curing, more preferably comprises at least a first gradient and a second gradient; Preferably, the first gradient insulation temperature is 70-150°C and the time is 1-10 min; Preferably, the rate of temperature increase from the first gradient to the second gradient is 3 to 40°C / min; Preferably, the second gradient insulation temperature is 180-250°C and the time is 3-20 minutes; Preferably, the temperature is lowered to below 150° C. after the second gradient, and the rate of cooling is 5-20° C. / min.

6. The transfer method according to any one of claims 1 to 5, characterized in that: The bonding temperature in step (2) is 180-250° C. Preferably, the bonding pressure in step (2) is 15000-300000 Pa, more preferably 50000-150000 Pa; Preferably, the bonding time in step (2) is 5 to 20 minutes; Preferably, the bonding vacuum degree in step (2) is less than 10Pa.

7. The transfer method according to any one of claims 1 to 6, characterized in that: The debonding method in step (3) includes thermal slip debonding; Preferably, the debonding temperature in step (3) is 100 to 200° C. Preferably, the debonding slip speed in step (3) is less than 2 mm / s; Preferably, the debonding in step (3) further includes a cleaning step.

8. The transfer method according to any one of claims 1 to 7, characterized in that: The debonding method in step (5) includes laser debonding; Preferably, the laser energy for debonding in step (5) is ≥120 mj / cm 2 ; Preferably, the debonding laser in step (5) comprises visible light and / or ultraviolet light; Preferably, step (5) further includes a cleaning step after the debonding; Preferably, the method for removing the silicon substrate in step (6) comprises plasma etching and / or chemical etching; Preferably, the gas of the plasma etching method includes gas A and gas B; the gas A includes at least one of carbon tetrafluoride, sulfur hexafluoride or octafluorocyclobutane; the gas B includes oxygen or a mixed gas of oxygen and at least one of argon or helium; Preferably, the reagent of the chemical etching method includes at least one of hydrofluoric acid, nitric acid or water; Preferably, the etching rate of the chemical etching method is 0.2 to 2.2 μm / min; Preferably, the epitaxial layer thin film includes at least one of a gallium nitride thin film, a silicon dioxide thin film, a silicon nitride thin film, and a metal thin film.

9. A transfer method according to any one of claims 1 to 8, characterized in that: The transfer method includes: (1) coating a first temporary bonding layer material with a thickness of 2 to 80 μm and a thickness uniformity of ≤5% on the surface of a first substrate, and curing the material at 80 to 160° C. for 1 to 30 min to obtain the first temporary bonding layer; arranging an epitaxial layer film on the surface of a silicon substrate, using the first temporary bonding layer and the epitaxial layer film as bonding surfaces, bonding the first substrate to a silicon substrate at a temperature of 100 to 150° C., a pressure of 0 to 2000 Pa, and a vacuum degree of <10 Pa for 1 to 10 min, cleaning the silicon substrate, and thinning the silicon substrate to 50 to 100 μm to obtain a first substrate; (2) coating a laser release layer material with a thickness of 200 nm to 5 μm and a thickness uniformity of ≤20% on the surface of the second substrate, maintaining the temperature at 70 to 150° C. for 1 to 10 min, then heating the temperature to 200 to 400° C. at a heating rate of 3 to 40° C. / min, maintaining the temperature for 10 to 80 min, then cooling the temperature to below 150° C. at a rate of 5 to 20° C. / min, and cooling to obtain a laser release layer; coating a second adhesive layer material with a thickness of 2 to 80 μm and a thickness uniformity of ≤10% on the surface of the laser release layer, and performing multi-temperature zone gradient curing to obtain the second temporary bonding layer; The multi-temperature zone gradient curing at least comprises keeping the temperature at 70-150° C. for 1-10 min, heating the temperature to 180-250° C. at a heating rate of 3-40° C. / min, keeping the temperature for 3-20 min, and then reducing the temperature to below 150° C. at a rate of 5-20° C. / min; using the side of the silicon substrate away from the first temporary bonding layer and the second adhesive layer as bonding surfaces, bonding the first substrate obtained in step (1) with the second substrate at a temperature of 180-250° C., a pressure of 15000-300000 Pa, and a vacuum degree of less than 10 Pa for 5-20 min to obtain the second substrate; (3) performing thermal sliding debonding on the second substrate obtained in step (2), cleaning, removing the first temporary bonding layer and the first substrate, and obtaining a third substrate; (4) providing an adhesive layer on the surface of the target substrate, using the epitaxial layer and the adhesive layer as bonding surfaces, and bonding the third substrate obtained in step (3) to the target substrate to obtain a fourth substrate; (5) The fourth substrate obtained in step (4) is subjected to a laser energy of ≥120 mj / cm 2 performing laser debonding under conditions of, wherein the debonding laser includes visible light and / or ultraviolet light; cleaning to remove the second temporary bonding layer and the second substrate to obtain a fifth substrate; (6) The fifth substrate obtained in step (5) is subjected to plasma etching and / or chemical etching to remove the silicon substrate, thereby achieving the transfer of the epitaxial layer film.

10. Use of the transfer method according to any one of claims 1 to 9 in the preparation of semiconductor devices.

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