Deep temperature measuring device and deep temperature measuring method

Abstract

Provided are a deep temperature measurement device and a deep temperature measurement method with which it is possible to measure the deep temperature of an object to be measured with high precision, high accuracy, and high-speed responsiveness. A deep temperature measurement device (10) is provided with: a temperature-sensitive unit (Ts) that senses temperature; a measurement thin film thermistor (1) capable of measuring temperature by bringing the temperature-sensitive part (Ts) into contact with a measurement object; a heating element layer (3) for heating the thin film thermistor (1) for measurement; a control thin-film thermistor (2) that is disposed with a first heat insulating layer (4) therebetween from the measurement thin-film thermistor (1) and that controls the temperature of the heating element layer (3) so that the temperature is equal to the temperature of the measurement thin-film thermistor (1); and a second heat insulating layer (5) that covers the heating element layer (3).

Description

Technical Field

[0001] The present invention relates to a deep temperature measuring device and a deep temperature measuring method suitable for measuring the deep temperature of a living body as a measurement object. Background Art

[0002] There are known deep temperature measuring devices that measure the temperature of the deep part of the object being measured. For example, when the object being measured is a human or animal organism, the body temperature of the organism can be divided into a core part and a surface part. The core part is the tissue inside the organism, and its temperature is not affected by heat diffusion to the surrounding environment. In contrast, the surface part is affected by heat exchange with the surrounding environment, and its temperature is easily changed.

[0003] When measuring the body temperature of a living body as a measurement object, it is important to measure and grasp the core temperature in order to confirm the condition and state of the measured person (living body). Therefore, considering the safety of the measured person and the reduction of the burden, a deep thermometer that measures the core temperature in a non-invasive manner has been developed.

[0004] In the past, for example, a deep temperature measurement device has been proposed, which sets a control temperature-sensitive element and a measuring temperature-sensitive element of a heating element through an insulating layer, and uses a state of temperature equilibrium between the measuring temperature-sensitive element and the control temperature-sensitive element, i.e., a so-called zero heat flux state, to measure the deep temperature.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 5779806

[0008] Patent Document 2: Japanese Patent No. 6038890

[0009] Patent Document 3: Japanese Patent Utility Model Publication No. 54-19899 Summary of the invention

[0010] However, the temperature-sensitive element in the existing deep temperature measurement device is specifically a chip-type block-structured NTC thermistor, which has a large heat capacity and limited temperature responsiveness, and it is difficult to expect high-speed responsiveness.

[0011] An object of embodiments of the present invention is to provide a deep temperature measurement device and a deep temperature measurement method capable of measuring the deep temperature of a measurement object with high precision, high accuracy, and high-speed responsiveness.

[0012] The deep temperature measurement device involved in the embodiment of the present invention is characterized in that it includes: a temperature-sensitive portion that senses temperature; a measuring thin-film thermistor that can measure temperature by bringing the temperature-sensitive portion into contact with a measurement object; a heating element layer that heats the measuring thin-film thermistor; a control thin-film thermistor that is arranged with the measuring thin-film thermistor separated by a first insulation layer and controls the temperature of the heating element layer in a manner that makes the temperature equal to that of the measuring thin-film thermistor; and a second insulation layer that covers the heating element layer.

[0013] According to the deep temperature measurement device of this embodiment, the deep temperature of the measurement object can be measured with high precision, high accuracy and high-speed responsiveness.

[0014] The deep temperature measurement method involved in the embodiment of the present invention is characterized in that it comprises: a temperature-sensitive portion that senses temperature; a measuring thin film thermistor that can measure temperature by bringing the temperature-sensitive portion into contact with a measurement object; a heating element layer that heats the measuring thin film thermistor; a controlling thin film thermistor that is arranged with the measuring thin film thermistor separated by a first insulating layer and controls the temperature of the heating element layer in a manner that makes the temperature equal to the temperature of the measuring thin film thermistor; and a second insulating layer that covers the heating element layer, and the deep temperature measurement method includes the following steps: bringing the temperature-sensitive portion into contact with a measurement object; a controlling thin film thermistor that detects heat released from the measuring thin film thermistor; controlling the heating temperature of the heating element layer according to the temperature difference between the detection temperature of the measuring thin film thermistor and the detection temperature of the controlling thin film thermistor; detecting a thermal equilibrium state in which the temperature changes of the measuring thin film thermistor and the controlling thin film thermistor are equal; and outputting the measurement result of the deep temperature of the measurement object.

[0015] (Effects of the Invention)

[0016] According to the embodiments of the present invention, a deep temperature measurement device and a deep temperature measurement method capable of measuring the deep temperature of a measurement object with high precision, high accuracy and high-speed responsiveness can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a perspective view showing a deep temperature measurement device according to an embodiment of the present invention.

[0018] Figure 2 This is an exploded perspective view showing the deep temperature measuring device as viewed from the side of the temperature-sensitive element for measurement.

[0019] Figure 3This is a plan view showing a measuring temperature-sensitive element, a heat-generating layer, and a control temperature-sensitive element of the heat-generating layer mounted on a wiring board of the deep temperature measuring device.

[0020] Figure 4 Yes means Figure 1 A cross-sectional view of a schematic portion along line XX.

[0021] Figure 5 Yes means Figure 1 A cross-sectional view of a schematic portion along line YY in FIG.

[0022] Figure 6 This is a perspective view showing an enlarged view of a temperature-sensitive element for measurement in the deep temperature measuring device.

[0023] Figure 7 is along Figure 6 A cross-sectional view showing the measuring temperature sensitive element cut along line AA.

[0024] Figure 8 1 is a flow chart showing the operation of the deep temperature measuring device.

[0025] Fig. 9 It is an explanatory diagram showing the relationship between the thickness dimensions of the present embodiment and a comparative example of the deep temperature measurement device.

[0026] Fig.10 : is a graph showing the response time of the deep temperature measuring device.

[0027] Description of Reference Numerals

[0028] 1…Thin film thermistor for measurement

[0029] 2…Thin film thermistor for control

[0030] 3…Heat-generating layer

[0031] 4…First insulation layer

[0032] 5…Second insulation layer

[0033] 6…Wiring board

[0034] 11, 21...Substrate

[0035] 12, 22…Electrode layer

[0036] 13, 23…Thin film element layer

[0037] 14, 24…Protective insulation layer

[0038] 61…Extension

[0039] 62…Terminal

[0040] 64…Wiring pattern

[0041] 65…Base material

[0042] 66…Overlay

[0043] 100…Controller

[0044] As…Adhesive layer

[0045] Ts...Temperature sensitive department DETAILED DESCRIPTION

[0046] Below, refer to Figures 1 to 10 A deep temperature measurement device and a deep temperature measurement method according to an embodiment of the present invention will be described. Figure 1 and Figure 2 The following is a perspective view showing a deep temperature measuring device and an exploded perspective view showing the temperature sensing element for measurement as viewed from the side thereof. Figure 3 1 is a plan view showing a temperature-sensitive element for measurement, a heat-generating layer, and a temperature-sensitive element for control of the heat-generating layer mounted on a wiring substrate. Figure 4 yes Figure 1 A schematic cross-sectional view of a portion along line XX, Figure 5 yes Figure 1 A cross-sectional view of a schematic portion along line YY in FIG. Figure 6 This is a three-dimensional diagram showing an enlarged temperature-sensitive element for measurement. Figure 7 It is a cross-sectional view showing an enlarged temperature-sensitive element for measurement. Figure 8 is a flow chart showing the operation of the deep temperature measuring device, Fig. 9 1 is an explanatory diagram showing the relationship between the thickness dimensions of the present embodiment and the comparative example of the deep temperature measurement device. Fig.10 It is a graph showing the response time of the deep temperature measuring device.

[0047] In addition, for the convenience of explanation, the scale of each component is sometimes appropriately changed in each figure so that each component is a recognizable size. In addition, the same reference numerals are attached to the same or corresponding parts, and repeated explanations are omitted.

[0048] The deep temperature measuring device of this embodiment is a temperature-sensitive part that senses temperature attached to the body surface in order to measure the deep body temperature of a living body as a measurement object, and can perform measurement in a non-invasive manner with high precision, high accuracy and high-speed responsiveness. Thin film thermistors are used as the temperature-sensitive element for measuring the temperature of the body surface and the temperature-sensitive element for controlling the power of the heating element.

[0049] like Figures 1 to 5As shown, the deep temperature measurement device 10 is a probe having a temperature-sensitive portion Ts for sensing temperature, and is provided with a measuring thin film thermistor 1 as a measuring temperature-sensitive element, a controlling thin film thermistor 2 as a controlling temperature-sensitive element of a heating element layer, a heating element layer 3, a first heat insulating layer 4, and a second heat insulating layer 5. The measuring thin film thermistor 1, the controlling thin film thermistor 2, and the heating element layer 3 are mounted on a wiring substrate 6. In addition, a controller 100 is provided, and the controller 100 has a control processing unit for controlling each component, and the probe is connected to the controller 100 via a connector 100a.

[0050] The overall appearance of the deep temperature measurement device 10 is a thin disc, with a total thickness of about 5 mm to 6 mm and a size of about.

[0051] like Figure 3 As shown, the wiring substrate 6 is a flexible wiring substrate (FPC) having flexibility. The wiring substrate 6 is formed in a substantially circular shape and has an elongated extension portion 61 extending from its outer peripheral end in the radial direction. In addition, a terminal portion 62 extending from the outer peripheral end in the radial direction is formed at a distance of approximately 90 degrees from the extension portion 61. A connection pad 62a is formed on the terminal portion 62. Moreover, a plurality of slits 63 are formed on the wiring substrate 6 from the outer periphery toward the center.

[0052] The wiring substrate 6 has a conductor wiring pattern 64, which includes a heating element layer 3 formed on the surface of the wiring substrate 6. A thin film thermistor 1 for measurement is mounted on the front end of the extension 61, and a thin film thermistor 2 for control is mounted on the central part of the wiring substrate 6. In addition, a narrow and spiral wiring pattern 64 that functions as the heating element layer 3 is formed on substantially the entire area of ​​the wiring substrate 6.

[0053] If you refer to Figure 4 and Figure 5 As shown in FIG. 1 , in detail, the wiring substrate 6 has a thickness of about 0.05 mm and is composed of, for example, a thin film-like insulating base material 65 and a cover layer 66, wherein the thin film-like insulating base material 65 is composed of a polyimide resin, a polyethylene terephthalate (PET) resin, etc., and the cover layer 66 is an insulating layer that covers the wiring pattern 64 formed on the surface of the insulating base material 65 and is composed of a polyimide film, etc. In addition, the terminal portion 62 is an exposed portion that is not covered by the cover layer 66.

[0054] like Figure 6 and Figure 7 As shown, the measuring thin film thermistor 1 includes a substrate 11 , an electrode layer 12 formed on the surface (lower side in the figure) of the substrate 11 , a thin film element layer 13 , and a protective insulating layer 14 .

[0055] The substrate 11 is roughly quadrilateral and is formed of an insulating zirconium oxide material. In addition, the material forming the substrate 11 can also use ceramics such as aluminum nitride or semiconductor materials such as silicon and germanium. On the surface of the substrate 11, an insulating thin film is formed by sputtering. Specifically, the quadrilateral substrate 11 is formed to be extremely thin, with a thickness dimension of less than 0.3mm, preferably less than 0.25mm, a length dimension of 1.6mm, and a width dimension of 0.8mm. By using such an extremely thin substrate 11 for a thin film thermistor, the heat capacity becomes smaller, and a temperature-sensitive element with high sensitivity and excellent thermal responsiveness can be realized. In addition, the length and width dimensions of the measuring thin film thermistor 1 are also determined by the size of the substrate 11, with the length dimension being 1.6mm and the width dimension being 0.8mm.

[0056] A pair of electrode layers 12 are formed at both ends of the substrate 11. The electrode layer 12 is formed by forming a metal thin film by sputtering, and its metal material is preferably a noble metal such as platinum (Pt), gold (Au), silver (Ag), palladium (Pd) or an alloy thereof, such as Ag-Pd alloy.

[0057] The thin film element layer 13 is a thermistor composition and is composed of an oxide semiconductor having a negative temperature coefficient. The thin film element layer 13 is formed on the electrode layer 12 by sputtering or the like and is electrically connected to the electrode layer 12. In addition, the thin film element layer may also be composed of an oxide semiconductor having a positive temperature coefficient.

[0058] The thin film element layer 13 is composed of two or more elements selected from transition metal elements such as manganese (Mn), nickel (Ni), cobalt (Co), and iron (Fe).

[0059] The protective insulating layer 14 is formed so as to cover the thin film element layer 13. The protective insulating layer 14 is a protective glass layer formed of borosilicate glass.

[0060] Furthermore, the wiring pattern 641 extending from the extending portion 61 of the wiring substrate 6 is bonded to the electrode layer 12 by soldering Sd and electrically connected.

[0061] If you refer to Figure 4 and Figure 5 As shown in FIG. 1 , the thin film thermistor 1 for measurement is arranged such that the thin film element layer 13 and the electrode layer 12 formed on the surface of the substrate 11 face the measured object side, that is, the body surface side that becomes the contact surface, and is mounted on the wiring substrate 6. Therefore, the thin film thermistor 1 for measurement is mounted and arranged face down on the wiring substrate 6.

[0062] The control thin film thermistor 2 has the function of controlling the power supplied to the heating element layer 3, and is the same element as the measurement thin film thermistor 1, and has the same specifications and characteristics. Therefore, the same or equivalent parts as those of the measurement thin film thermistor 1 are marked with the same or equivalent symbols, and detailed descriptions are omitted.

[0063] like Figures 3 to 5 As shown, the heat generating layer 3 is formed in a narrow and substantially spiral pattern from the center to the outer periphery of the wiring substrate 6. The heat generating layer 3 generates heat when electric power is supplied.

[0064] like Figure 2 , Figure 4 as well as Figure 5 As shown, the first heat insulating layer 4 is formed of foamed polyethylene having heat insulating properties and flexibility, which has the effect of suppressing the generation of a gap between the measured object and the measured object even if the measured object is not a flat surface. Figure 4 and Figure 5 In the figure, the scale of each component is appropriately changed for convenience of explanation. For example, the relationship between the thickness of the wiring substrate 6 and the measurement thin film thermistor 1 and the control thin film thermistor 2. In fact, the thickness of the wiring substrate 6 is smaller than the thickness of the measurement thin film thermistor 1.

[0065] The first heat insulating layer 4 is in a circular shape of substantially the same size as the wiring substrate 6, and specifically has a thickness of 3.0 mm. The first heat insulating layer 4 has a double-sided adhesive sheet As as an adhesive layer. The wiring substrate 6 is attached to both sides of the first heat insulating layer 4. In detail, the wiring substrate 6 is a substrate. The circular portion of the wiring substrate 6 is arranged on one side of the first heat insulating layer 4, and the extension portion 61 of the wiring substrate 6 is bent and arranged on the other side of the first heat insulating layer 4.

[0066] In addition, if Figures 4 to 7 As shown in FIG. 6 , the portion where the measuring film thermistor 1 is mounted is exposed without being covered by the cover layer 66. Similarly, the portion where the controlling film thermistor 2 is mounted is also exposed without being covered by the cover layer 66. Therefore, the double-sided adhesive sheet As as an adhesive layer is in direct contact with the measuring film thermistor 1 and the controlling film thermistor 2. Specifically, the double-sided adhesive sheet As surrounds the measuring film thermistor 1 and the controlling film thermistor 2 by its adhesiveness.

[0067] In addition, the length dimension of the measuring thin film thermistor 1 is 1.6 mm, and the width dimension is 0.8 mm. Therefore, the ratio of the length dimension and the width dimension of the measuring thin film thermistor 1 to the diameter dimension of the first heat insulating layer 4 is about 1:26 for the length dimension and about 1:53 for the width dimension. By increasing the ratio in this way, the heat insulation can be fully ensured. As a result of studying and exploring the above structure, the following insight was found: by setting the ratio of the length dimension and the width dimension of the measuring thin film thermistor 1 to the diameter dimension of the first heat insulating layer 4 to 1:10 or more, preferably 1:26 or more, it is expected that the heat insulation can be ensured, which is ideal.

[0068] In addition, a second heat insulating layer 5 is attached to one side of the wiring substrate 6 via a soft, flexible and sticky double-sided adhesive sheet As as an adhesive layer. The second heat insulating layer 5 is also formed of foamed polyethylene having heat insulating properties and flexibility. In addition, the thickness of the second heat insulating layer 5 is about 2 mm.

[0069] As described above, the measuring thin film thermistor 1, the control thin film thermistor 2, the wiring substrate 6, the heating element layer 3, the first insulation layer 4, the second insulation layer 5 and the double-sided adhesive sheet As are stacked to form a probe, and the temperature-sensitive portion Ts is formed by the other side of the first insulation layer 4 where the measuring thin film thermistor 1 is located and the measuring thin film thermistor 1. The temperature-sensitive portion Ts constitutes a contact surface in contact with the measured object (body surface), and can be pasted on the measured object through the double-sided adhesive sheet As. By adopting such a structure, there is an effect that no gap is generated between the measured object and the first insulation layer 4. In detail, the first insulation layer 4, the second insulation layer 5, the wiring substrate 6 and the adhesive sheet As as an adhesive layer are all flexible, so that the probe as a whole is flexible. Therefore, regardless of whether the measured object is flat or curved, its shape can be imitated and the temperature-sensitive portion Ts can be seamlessly and tightly contacted with the measured object using the double-sided adhesive sheet As.

[0070] In addition, the measuring thin film thermistor 1 and the controlling thin film thermistor 2 are arranged to be separated by the first heat insulating layer 4. In this case, the measuring thin film thermistor 1 and the controlling thin film thermistor 2 are arranged so that the structural elements such as the substrate 11 and the thin film element layer 13 of the measuring thin film thermistor 1 and the substrate 21 and the thin film element layer 23 of the controlling thin film thermistor 2 are located at line-symmetrical positions.

[0071] Next, the deviation (tolerance) of the resistance value of the measuring thin film thermistor 1 and the control thin film thermistor 2 is described. For example, the resistance value shown by the thermistor depends on the constituent material of the thermistor or the mixing ratio of the materials, the manufacturing conditions, and the size, etc. Therefore, the resistance value shown by the thermistor is prone to deviation and individual differences. Therefore, it is expected to correct the deviation of the resistance value and reduce the deviation, so as to perform temperature measurement with high reliability.

[0072] Conventional thermistors have a standard that the resistance value of 10 kΩ at room temperature 25°C has a deviation of ±5%. However, when converted to temperature, this becomes an error of about ±2.5°C, which greatly impairs reliability for deep temperature measurement.

[0073] Therefore, as a means of reducing the deviation, a deep temperature measurement device provided with a temperature sensor calibration device is provided. However, providing a temperature sensor calibration device not only increases the number of components, but also takes time to calibrate. In addition, the presence of the temperature sensor calibration device may affect the temperature environment.

[0074] In addition, in the case of using a deep temperature measurement device in a medical setting, there is the YSI400 standard (which specifies the resistance values ​​used in thermistor temperature measuring bodies of the YSI400 series and is widely used as a standard for medical temperature probes and their connection devices). The YSI400 standard specifies that the deviation of the resistance value of 2.2 kΩ at room temperature 25°C is ±0.2%.

[0075] Therefore, it is preferred that the resistance value deviation of 10 kΩ at room temperature 25°C be within a range of less than ±0.5% at least according to the YSI400 standard, and it is more preferred that the resistance value deviation of 2.2 kΩ at room temperature 25°C be within a range of ±0.2% according to the YSI400 standard.

[0076] As a processing method for suppressing such deviation, when the deviation of the resistance value is corrected, a method of trimming is applied by removing a part of the electrode surface of the thin film thermistor or the thin film thermistor body by laser irradiation or sandblasting. In this case, the removed part for trimming is formed on the electrode layer or the thin film element layer of the thin film thermistor.

[0077] In addition, this method is sometimes used to make the thickness of a substrate of a thin film thermistor uniform, to make the cut size of thin film thermistors uniform when cutting thin film thermistors from the same wafer, or to screen manufactured thin film thermistors.

[0078] By applying the above-described processing method for suppressing the variation, it is possible to provide the deep temperature measurement device 10 which does not require a temperature sensor calibration device and has high accuracy and high reliability.

[0079] Next, regarding the operation of the deep temperature measurement device 10, refer to Figure 8 A case where the body temperature of a living body as a measurement target is measured will be described. Figure 8 2 is a flowchart showing an outline of temperature measurement. These operations are mainly executed by a program built into the control processing unit of the controller 100 .

[0080] First, the terminal portion 52 in the probe is connected to the connector 100a led out from the controller 100. Since a release sheet (not shown) is previously attached to the temperature-sensitive portion Ts, the release sheet is peeled off.

[0081] Next, the temperature-sensitive portion Ts is attached to the body surface of the object to be measured so that it contacts the body surface, and the deep temperature measurement device 10 is powered on and started (step S1). The deep temperature is transferred to the measuring thin film thermistor 1 (step S2). The heat of the measuring thin film thermistor 1 is released through the first heat insulating layer 4. The control thin film thermistor 2 detects the released heat (step S3).

[0082] The control thin film thermistor 2 controls the heating temperature according to the temperature difference between the detection temperature of the measuring thin film thermistor 1 and the detection temperature of the control thin film thermistor 2, so as to supply power to the heating element layer 3 to generate heat (step S4). In this case, since the control thin film thermistor 2 and the heating element layer 3 are covered by the second heat insulating layer 5, it is possible to suppress the diffusion of heat due to wind or the like.

[0083] The measuring thin film thermistor 1 is heated and controlled by the heating body layer 3 so that the temperatures of the measuring thin film thermistor 1 and the controlling thin film thermistor 2 become equal, and the temperature is controlled to be in a thermal equilibrium state, that is, the heat flux of the first heat insulating layer 4 between the measuring thin film thermistor 1 and the controlling thin film thermistor 2 is a so-called zero heat flux state (step S5). Since the body surface temperature in the thermal equilibrium state, that is, the detected temperature of the measuring thin film thermistor 1, can be estimated as the deep temperature, it is detected that the thermal equilibrium state has been reached (step 6), and the measurement result of the deep temperature of the biological body is displayed or recorded in the controller 100 and output (step S7).

[0084] Next, refer to Fig. 9 The role played by the thickness of the heat insulating layer is described below. Fig. 9 (a) is a conceptual diagram for explaining the effect of the thickness of the heat insulating layer in this embodiment. Fig. 9 (b) is a conceptual diagram for explaining the effect of the thickness of the heat insulating layer of the comparative example.

[0085] like Fig. 9 As shown in (a), in this embodiment, the first heat insulating layer 4 and the control thin film thermistor 2 are stacked on the measuring thin film thermistor 1. Here, the thickness dimension t of these stacked states is about 3 mm, and the thickness dimensions t1 and t2 of the measuring thin film thermistor 1 and the control thin film thermistor 2 including the wiring substrate 6 are respectively about 0.25 mm. Therefore, the thickness dimension t3 of the first heat insulating layer 4 is about 2.5 mm.

[0086] On the other hand, Fig. 9 In the conventional comparative example shown in (b), when the thickness dimension t of the stacked state is set to about 3 mm, the measuring thermistor 1a and the control thermistor 2a are chip-type block-structured thermistors, and their respective thickness dimensions t1 and t2 are about 0.9 mm. Therefore, the thickness dimension t3 of the first heat insulating layer 4a is about 1.2 mm.

[0087] Therefore, according to the present embodiment, the thickness dimension t3 of the first heat insulating layer 4 can be increased, so that the thermal resistance can be improved, and thus the time to reach a thermal equilibrium state can be shortened, thereby speeding up the measurement time of the deep temperature.

[0088] Furthermore, refer to Fig.10 The response time of the deep temperature measuring device is described. Fig.10 Graph showing the response time of the present embodiment and the comparative example. The present embodiment uses a measuring thin film thermistor 1 and a controlling thin film thermistor 2, while the conventional comparative example uses a chip-type bulk structure thermistor.

[0089] like Fig.10 As shown, the response time from activation of the deep temperature measurement device to completion of deep temperature measurement is 120 seconds in the comparative example, but is 88 seconds in the present embodiment.

[0090] Thus, in this embodiment, measurement can be performed with high-speed responsiveness. The reasons are considered to be that: in this embodiment, a thin film thermistor with a small heat capacity and an extremely thin substrate 11 is used; with the use of a thin film thermistor, the thickness of the first heat insulating layer 4 can be increased to improve thermal resistance; and in the thin film thermistor 1 for measurement, the thin film element layer 13 and the electrode layer 12 formed on the surface of the substrate 11 are arranged in a manner facing the contact surface of the measurement object, that is, the body surface side, so that the movement of heat from the body surface can be smoothly transferred to the thin film thermistor 1 for measurement.

[0091] Furthermore, by forming a thin film thermistor on the wiring substrate 6 without using the substrate 11 , it is possible to further improve the performance.

[0092] As described above, according to the present embodiment, the deep temperature of the measurement object can be measured with high precision, high accuracy and high-speed responsiveness. In addition, by applying a processing method such as trimming to suppress the deviation of the measurement thin film thermistor 1 and the control thin film thermistor 2, a deep temperature measurement device 10 with high accuracy and high reliability can be provided without requiring a temperature sensor calibration device.

[0093] Furthermore, the second heat insulating layer 5 in this embodiment is to prevent the influence of disturbances such as wind, and by providing an infrared reflection layer on the surface, the effect of suppressing the diffusion of convective heat and radiant heat can be further improved.

[0094] The deep temperature measuring device and deep temperature measuring method of the present invention are suitable for measuring the deep temperature of biological bodies such as deep thermometers, but are not limited thereto. They can also be applied to measuring the deep temperature of objects in the industrial field, for example, they can also be applied to predicting the life of a battery by grasping the temperature information of the positive electrode inside a secondary battery.

[0095] The present invention is not limited to the structure of the above-mentioned embodiment, and various modifications can be made without departing from the scope of the invention. In addition, the above-mentioned embodiment is proposed as an example and is not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made. These embodiments and their modifications are included in the scope or spirit of the invention, and are included in the invention recorded in the claims and the scope of their equivalents.

Claims

1. A deep temperature measurement device, characterized in that: have: Thermosensitive part, senses temperature; A thin film thermistor for measurement, capable of measuring temperature by bringing the temperature-sensitive portion into contact with a measurement object; A heating element layer for heating the measuring thin film thermistor; a control thin film thermistor disposed with the measuring thin film thermistor interposed therebetween with a first heat insulating layer, and controlling the temperature of the heat generating layer so as to be equal to the temperature of the measuring thin film thermistor; as well as The second heat insulating layer covers the heat generating layer.

2. The deep temperature measuring device according to claim 1, characterized in that: The measuring thin film thermistor and the controlling thin film thermistor include a substrate, and a thin film element layer and an electrode layer formed on the substrate, and are arranged so that the thin film element layer and the electrode layer face a contact surface to be measured.

3. The deep temperature measuring device according to claim 1 or 2, characterized in that: The measurement thin film thermistor and the control thin film thermistor are trimmed to calibrate resistance values.

4. The deep temperature measuring device according to claim 3, characterized in that: The deviation of the resistance values ​​of the measuring thin film thermistor and the controlling thin film thermistor is within a range of less than ±0.5%.

5. The deep temperature measuring device according to claim 2, characterized in that: The thickness of the substrate in the measuring thin film thermistor is 0.3 mm or less.

6. The deep temperature measuring device according to claim 1 or 2, characterized in that: The first heat insulating layer and the second heat insulating layer have flexibility.

7. The deep temperature measuring device according to claim 1 or 2, characterized in that: The ratio of the length and width of the measuring thin film thermistor to the diameter of the first heat insulating layer is set to 1:10 or more.

8. The deep temperature measuring device according to claim 1 or 2, characterized in that: A soft and flexible adhesive layer is provided on the first heat-insulating layer and the second heat-insulating layer.

9. The deep temperature measuring device according to claim 1 or 2, characterized in that: An infrared reflective layer is provided on the surface of the second heat insulating layer.

10. A deep temperature measurement method, characterized in that: have: Thermosensitive part, senses temperature; A thin film thermistor for measurement, capable of measuring temperature by bringing the temperature-sensitive portion into contact with a measurement object; A heating element layer for heating the measuring thin film thermistor; a control thin film thermistor disposed with the measuring thin film thermistor interposed therebetween with a first heat insulating layer, and controlling the temperature of the heat generating layer so as to be equal to the temperature of the measuring thin film thermistor; and The second heat insulating layer covers the heating element layer. The deep temperature measurement method comprises the following steps: bringing the temperature-sensitive portion into contact with a measurement object; A control thin film thermistor detects heat released from the measurement thin film thermistor; controlling the heating temperature of the heating element layer according to the temperature difference between the detection temperature of the measuring thin film thermistor and the detection temperature of the controlling thin film thermistor; detecting a thermal equilibrium state in which the temperature changes of the measuring thin film thermistor and the controlling thin film thermistor are equal; and The measurement result of the deep temperature of the measurement object is output.

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