Optoelectronic module

Abstract

The invention relates to an optoelectronic module. The optoelectronic module has an optoelectronic component structure for emitting light having at least one optoelectronic component, an electronic semiconductor chip for controlling the operation of the optoelectronic component structure, and a carrier. The optoelectronic component structure is arranged at least on the electronic semiconductor chip. The optoelectronic component structure is designed to induce a light emission in a region covering the electronic semiconductor chip and in a region transverse to the electronic semiconductor chip that does not cover the electronic semiconductor chip.

Description

Technical Field

[0001] The invention relates to an optoelectronic module having an optoelectronic component structure for light emission having at least one optoelectronic component and an electronic semiconductor chip for controlling the operation of the optoelectronic component structure.

[0002] This patent application claims the priority of German patent application 10 2022 112 637.4, the disclosure content of which is hereby incorporated herein by reference. Background Art

[0003] An optoelectronic module for light emission may include an optoelectronic device structure having one or more light-emitting optoelectronic devices and an electronic semiconductor chip for controlling the operation of the optoelectronic device structure. Possible application areas are headlights (AFS, adaptive front-lighting system) of adaptive lighting systems used in the automotive field. Light emission can be carried out by pixelated light-emitting semiconductor chips, which are arranged on an electronic semiconductor chip and contacted by the electronic semiconductor chip (μAFS, micro-structured adaptive front-lighting system). Light emission can occur in the following area: the pixelated light-emitting semiconductor chip covers the electronic semiconductor chip in the area. The two semiconductor chips can be coordinated with each other in terms of size and contact elements for contact. Geometric changes in light emission can be made by changing the design of the pixelated semiconductor chip or adding other light-emitting devices mounted on the electronic semiconductor chip. This may be associated with design changes of the electronic semiconductor chip, and thus with high expenditure and cost. Summary of the invention

[0004] The object of the present invention is to specify an improved optoelectronic module which allows a high degree of design flexibility.

[0005] This object is achieved by an optoelectronic module according to claim 1. Further advantageous embodiments of the invention are given in the dependent claims.

[0006] According to one aspect of the present invention, an optoelectronic module is provided. The optoelectronic module comprises an optoelectronic component structure for light emission having at least one optoelectronic component, an electronic semiconductor chip for controlling the operation of the optoelectronic component structure, and a carrier. The optoelectronic component structure is arranged at least on the electronic semiconductor chip. The optoelectronic component structure is configured to cause light emission in a region covering the electronic semiconductor chip and in a region transverse to the electronic semiconductor chip and not covering the electronic semiconductor chip.

[0007] The proposed optoelectronic module differs from conventional designs in that the light emission of the optoelectronic component structure is not limited to the region of the electronic semiconductor chip used for control, but is also extended to regions transverse to the electronic semiconductor chip. In this regard, light radiation is emitted in the region in which the electronic semiconductor chip is covered by the optoelectronic component structure and in another region transverse to the electronic semiconductor chip in which the electronic semiconductor chip is not covered by the component structure. This applies when viewed in a plan view of the front side or light emitting side of the optoelectronic module, which can emit light radiation.

[0008] In this way, a high degree of design freedom and flexibility in the manufacture of optoelectronic modules are possible. Here, different designs of optoelectronic modules can be realized in a flexible manner by means of respectively identical, for example standardized designs of electronic semiconductor chips and by using different designs of optoelectronic component structures and, if necessary, carriers. The method is not associated with cost-related changes to the electronic semiconductor chips, so that cost savings are possible. Electronic semiconductor chips with compact dimensions can also be used, which is also cost-effective. Different designs of the optoelectronic component structure can be realized, for example, by different designs, quantities, shapes and / or sizes of the optoelectronic components used respectively. Here, for example, different micro LED technologies can be combined.

[0009] Further possible details and embodiments that are conceivable for the optoelectronic module are described in more detail below.

[0010] Depending on the number of optoelectronic components for light emission, the optoelectronic component structure can have one or more emission regions arranged side by side, in which light emission can take place. In this case, when viewed in a plan view of the light emission side of the optoelectronic module, the one or more emission regions can at least partially cover the electronic semiconductor chip and the carrier transversely to the electronic semiconductor chip.

[0011] The electronic semiconductor chip used to control the operation of the optoelectronic device structure can be a CMOS assembly (complementary metal-oxide-semiconductor) and / or an application-specific integrated circuit or ASIC chip (application-specific integrated circuit).

[0012] The electronic semiconductor chip, the optoelectronic device structure or at least one optoelectronic device of the optoelectronic device structure and, if necessary, the carrier may have contact elements. The contact elements may be implemented metallically. Here, the contact elements of the optoelectronic device structure may be electrically connected to the electronic semiconductor chip and, if necessary, the contact elements of the carrier. In this way, an electric potential can be applied to the contact elements of the optoelectronic device structure, whereby the device structure can be powered in a suitable manner during operation. The electric potential can be generated by the electronic semiconductor chip. As long as not only the electronic semiconductor chip but also the carrier has one or more contact elements, one or more contact elements of the carrier can be electrically connected to the electronic semiconductor chip in a suitable manner. For this purpose, the carrier may have one or more conductor structures, such as printed conductors, which can be electrically connected to the electronic semiconductor chip. The contact elements of the electronic semiconductor chip and the carrier for contacting the optoelectronic device structure can be arranged in a common horizontal plane, thereby forming a contact plane.

[0013] The optoelectronic component structure can be arranged not only on the electronic semiconductor chip, but also on the carrier. In this case, the component structure can be connected to the electronic semiconductor chip and, when also arranged on the carrier, can be connected to the carrier. The corresponding connection can be an electrically conductive and thermal connection, or can be a connection that is only thermally conductive and is established via a connecting agent. For this purpose, a solder or (conductive) adhesive can be used. With regard to the electrical connection, the contact element on the back side of the component structure can be connected to other contact elements that are opposite, which can be components of the electronic semiconductor chip and, if necessary, the carrier. Heat dissipation during the operation of the optoelectronic component structure can be achieved by electrically conductive connections and only thermally conductive connections.

[0014] In the case of purely thermally conductive connections, it is also possible to use solder as a connecting agent. In order to prevent undesired electrical connections from occurring here, an insulating layer can be provided in the region of the thermal coupling. The insulating layer can be a component of the optoelectronic component of the optoelectronic component structure.

[0015] Other possible designs of optoelectronic modules and optoelectronic device structures and at least one optoelectronic device of the optoelectronic device structures are described below. Here, the features and details mentioned in relation to one design can also be applied in relation to another described design, and a plurality of designs can be combined with one another. For example, the optoelectronic device structure can have a plurality of optoelectronic devices, for which different designs of the designs mentioned below are proposed.

[0016] The optoelectronic device structure has at least one optoelectronic device. This may be a light-emitting semiconductor chip. The semiconductor chip may be a thin-film chip and may include, in addition to the contact element, a light-emitting semiconductor layer sequence and, if necessary, a conversion layer for radiation conversion. Primary light radiation may be generated by the semiconductor layer sequence, which may be at least partially converted into secondary light radiation by the conversion layer. As a result, mixed radiation including primary light radiation and secondary light radiation may be emitted. It is also feasible to use pixelated light-emitting semiconductor chips. Such a monolithic semiconductor chip may have pixels for light emission that are arranged side by side and can be individually controlled.

[0017] In a design of an optoelectronic device structure with multiple optoelectronic devices, multiple light-emitting semiconductor chips can be used. The light-emitting semiconductor chip can also be implemented in the form of a light-emitting diode chip or an LED chip (light emitting diode). It is also feasible to use a laser diode chip or a surface emitter (VCSEL, vertical-cavity surface-emitting laser). Instead of one or more semiconductor chips, it is also conceivable to use one or more packaged optoelectronic devices, which can include one or more (light-emitting and) provided with a housing semiconductor chip.

[0018] In configurations of an optoelectronic component structure having a plurality of light-emitting devices or semiconductor chips, these may be designed, depending on the application, to generate light radiation having one color, for example white, or also to generate light radiation of different colors.

[0019] In an optoelectronic device or semiconductor chip designed for light emission, the emission of light radiation can be carried out via or substantially via the front side of the device. The device in question can have contact elements for making contact on the opposite back side. The design can also be called a flip chip or horizontal design. A vertical design with contact elements present on both sides, i.e. the front side and the back side, is also possible.

[0020] In another embodiment, the optoelectronic component structure has an optoelectronic component which is arranged on the electronic semiconductor chip and the carrier and covers the electronic semiconductor chip and the carrier transversely to the electronic semiconductor chip in one region. In this way, light emission can be caused by the associated optoelectronic component in a connected region in which the optoelectronic component covers both the electronic semiconductor chip and the carrier transversely to the electronic semiconductor chip.

[0021] In another embodiment, the optoelectronic component structure has an optoelectronic component which projects laterally beyond the electronic semiconductor chip, thereby covering the carrier in a region transverse to the electronic semiconductor chip and being thermally or only thermally conductively connected to the carrier in said region. As a result, thermal energy arising during operation of the relevant optoelectronic component can be reliably discharged via the carrier. The optoelectronic component can also be arranged on the electronic semiconductor chip and be electrically contacted via the electronic semiconductor chip, so that heat can also be dissipated via the electronic semiconductor chip.

[0022] In another embodiment, the optoelectronic component structure has an optoelectronic component which is arranged at least on the electronic semiconductor chip and covers at least the electronic semiconductor chip in one region. Furthermore, the optoelectronic component structure has at least one further optoelectronic component which is arranged at least on the carrier and covers at least the carrier in a region transverse to the electronic semiconductor chip. In this configuration, light emission can be caused in the region of the electronic semiconductor chip and in a region transverse to the electronic semiconductor chip by the optoelectronic component in question.

[0023] In another embodiment, the optoelectronic component structure has an optoelectronic component, which has a contact element at the back side, which is electrically connected to the opposite contact element of the electronic semiconductor chip. In this way, the contact element of the relevant optoelectronic component can be loaded with a potential suitable for operation via the contact element of the electronic semiconductor chip connected thereto. The electrical connection can be established via a connecting agent, such as a solder or a conductive adhesive. In the design scheme, light emission can be caused in the region of the electronic semiconductor chip by the optoelectronic component, and if necessary, light emission can also be caused transversely to the electronic semiconductor chip as long as the component is not only in the region of the electronic semiconductor chip, but also extends beyond the electronic semiconductor chip, thereby covering the carrier in the region transverse to the electronic semiconductor chip. In the region, the optoelectronic component can be connected to the carrier purely thermally conductively, so that it is arranged on the carrier.

[0024] In another embodiment, the optoelectronic component structure has an optoelectronic component in the form of a pixelated light-emitting semiconductor chip as already mentioned above, which is arranged on an electronic semiconductor chip. The pixelated light-emitting semiconductor chip has a contact element at the back side, which is electrically connected to the opposite contact element of the electronic semiconductor chip. In this way, the contact elements of the pixelated light-emitting semiconductor chip can be loaded with a potential suitable for operation via the contact elements of the electronic semiconductor chip connected thereto, and in this regard, the pixels of the pixelated light-emitting semiconductor chip can be controlled to emit light. The electrical connection can be established via a connecting agent, such as a solder or an electrically conductive adhesive.

[0025] The pixelated light-emitting semiconductor chip may have a semiconductor layer sequence or a semiconductor body with light-emitting regions arranged side by side. The light-emitting regions may be designed to generate primary light radiation. The pixelated light-emitting semiconductor chip may also have a conversion layer arranged on the semiconductor layer sequence for radiation conversion, by means of which the primary light radiation may be partially converted into secondary light radiation. During operation, mixed radiation comprising primary light radiation and secondary light radiation may be emitted. The primary light radiation and the secondary light radiation may be blue light radiation and yellow light radiation, so that overall white light radiation may be emitted.

[0026] A pixel of a pixelated light-emitting semiconductor chip can be formed by a light-emitting region of the semiconductor layer sequence and a region of the conversion layer which is illuminated by the relevant light-emitting region during operation. The lateral geometry of the pixel can be predetermined by the lateral geometry of the light-emitting region.

[0027] The contact elements on the back side of the pixelated light-emitting semiconductor chip can include individual contact elements that are associated with each light-emitting area and thus pixel. The pixelated light-emitting semiconductor chip can also have connected contact elements on the back side. The connected contact elements can have recesses, in which the individual contact elements are arranged. In conjunction with this, the electronic semiconductor chip can have connected contact elements with recesses and individual contact elements arranged in the recesses. Here, the connected contact elements and the individual contact elements of the pixelated light-emitting semiconductor chip can be electrically connected to the connected contact elements and the individual contact elements of the electronic semiconductor chip.

[0028] The pixelated light-emitting semiconductor chip can be arranged only in the region of the electronic semiconductor chip, or cover the electronic semiconductor chip in one region, so that light emission can be caused in the region of the electronic semiconductor chip by the pixelated light-emitting semiconductor chip. The following design is also feasible, in which light emission can be caused in a region transverse to the electronic semiconductor chip by the pixelated light-emitting semiconductor chip.

[0029] In this sense, according to another embodiment, it is proposed that the pixelated light-emitting semiconductor chip extends laterally beyond the electronic semiconductor chip and has a contact element on its back side that extends laterally beyond the electronic semiconductor chip, and the contact element is electrically connected to the opposite contact element of the electronic semiconductor chip. According to the above-mentioned design scheme, the back-side and laterally extending contact elements may include or may be separate contact elements associated with each light-emitting area and thus pixel. The relevant light-emitting areas and pixels may also extend laterally beyond the electronic semiconductor chip. The separate contact elements may also have an elongated configuration. The same applies to the light-emitting areas and pixels belonging to the pixelated light-emitting semiconductor chip. The pixelated light-emitting semiconductor chip may also have a connected contact element on the back side. The connected contact elements may also extend laterally beyond the electronic semiconductor chip and may have corresponding recesses for separate elongated contact elements.

[0030] The pixelated light-emitting semiconductor chip that protrudes laterally beyond the electronic semiconductor chip can also be designed so that the semiconductor chip has individual contact elements belonging to pixel strips present in the area of ​​the electronic semiconductor chip, for example of relatively small dimensions, and other individual elongated contact elements belonging to elongated pixel strips that protrude beyond the electronic semiconductor chip.

[0031] Furthermore, due to the lateral projection, the pixelated light-emitting semiconductor chip can cover the carrier in a region in which the pixelated light-emitting semiconductor chip can be connected to the carrier in a purely thermally conductive manner, so that it is arranged on the carrier.

[0032] It is also conceivable to realize an optoelectronic module with a plurality of or two pixelated light-emitting semiconductor chips arranged side by side. In this case, a first pixelated light-emitting semiconductor chip can be mounted only in the region of the electronic semiconductor chip, and a second pixelated light-emitting semiconductor chip can be arranged in the region of the electronic semiconductor chip and the carrier so as to extend laterally beyond the electronic semiconductor chip. The two semiconductor chips can have contact elements on the back side and contacted by the electronic semiconductor chip in the manner described above, wherein the second semiconductor chip comprises contact elements extending laterally beyond the electronic semiconductor chip. The first semiconductor chip can have individual contact elements for pixel strips with, for example, relatively small dimensions, and the second semiconductor chip can have individual elongated contact elements for elongated pixel strips extending beyond the electronic semiconductor chip.

[0033] In another embodiment, the optoelectronic component structure has an optoelectronic component, which has contact elements at the back side, in which the contact elements of one back side of the optoelectronic component are electrically connected to the opposite contact elements of the electronic semiconductor chip, and the contact elements of the other back side of the optoelectronic component are electrically connected to the opposite contact elements of the carrier. In this way, the contact elements of the relevant optoelectronic components can be loaded with a potential suitable for operation via the contact elements of the electronic semiconductor chip and the carrier connected thereto. The electrical connection can be established via a connecting agent, such as a solder or a conductive adhesive. In the configuration, the optoelectronic component can bridge the electronic semiconductor chip and the carrier, or cover the electronic semiconductor chip and the carrier transversely to the electronic semiconductor chip in one area, and in this regard cause light emission in the area of ​​the electronic semiconductor chip and transversely thereto.

[0034] In another embodiment, the optoelectronic component structure has an optoelectronic component, which has a contact element at the back side, which is electrically connected to the opposite contact element of the carrier. In this case, the contact element of the relevant optoelectronic component can be charged with a potential suitable for operation via the contact element of the carrier connected thereto. The electrical connection can be established via a connecting agent, such as a solder or a conductive adhesive. In this embodiment, light emission can be caused by the optoelectronic component in a region transverse to the electronic semiconductor chip and, if necessary, also in the region of the electronic semiconductor chip, as long as the component covers not only the carrier but also the electronic semiconductor chip in one region.

[0035] In another embodiment, the optoelectronic component structure has an optoelectronic component, which has a contact element at the front side and a contact element at the back side. The contact element on the back side of the optoelectronic component is electrically connected to the opposite contact element of the electronic semiconductor chip, and the contact element on the front side of the optoelectronic component is electrically connected to the contact element of the carrier. In this way, the contact element of the relevant optoelectronic component can be loaded with a potential suitable for operation via the contact elements of the electronic semiconductor chip and the carrier connected thereto. In the configuration, light emission can be caused in the region of the electronic semiconductor chip by the optoelectronic component, and if necessary, light emission can also be caused transversely to the electronic semiconductor chip, as long as the component is not only in the region of the electronic semiconductor chip, but also extends beyond the electronic semiconductor chip so as to cover the carrier transversely to the electronic semiconductor chip. In the region, the optoelectronic component can be additionally connected to the carrier in a thermally conductive manner, so that it is arranged on the carrier.

[0036] With reference to the above-described design, the contact element on the back side of the optoelectronic device and the opposite contact element of the electronic semiconductor chip can be connected via a connecting agent, such as a solder or a conductive adhesive. The contact element on the front side of the optoelectronic device and the contact element of the carrier can be electrically connected via a contact layer. The contact layer can be a planar contact layer, also referred to as a PI contact (planar interconnect). In addition, the contact layer can be transparent and, for this purpose, can be composed of, for example, indium tin oxide (ITO).

[0037] In addition to contact elements for operating the optoelectronic component structure, the electronic semiconductor chip may also have contact elements via which the electronic semiconductor chip can be supplied with electrical energy and data communication with the electronic semiconductor chip can be performed. The latter may, for example, include transmitting control signals to the electronic semiconductor chip.

[0038] The electronic semiconductor chip can have contact elements at the front side. The contact elements of the electronic semiconductor chip on the front side can be connected to the contact elements of the back side of the optoelectronic component structure. The contact elements of the electronic semiconductor chip on the front side can also be connected to the contact elements of the carrier, in particular by using conductor structures of the carrier. The contact elements of the electronic semiconductor chip on the front side and the contact elements of the carrier can form a contact plane.

[0039] In another embodiment, the electronic semiconductor chip has contact elements at the front side and at the back side. In this embodiment, the contact elements on the back side of the electronic semiconductor chip can be used, for example, to supply the electronic semiconductor chip with electrical energy and to perform data communication with the electronic semiconductor chip. For this purpose, the contact elements on the back side of the electronic semiconductor chip can be electrically connected to the contact elements and the conductor structure of the carrier. It is also possible to use the contact elements on the back side of the electronic semiconductor chip to control the operation of at least one optoelectronic component of the optoelectronic component structure.

[0040] In this sense, it is proposed according to another embodiment that the carrier has an extended contact element which is electrically connected to a contact element of the electronic semiconductor chip on the back side of the electronic semiconductor chip and projects laterally beyond the electronic semiconductor chip on the back side of the electronic semiconductor chip. The optoelectronic component structure has an optoelectronic component which is arranged laterally next to the electronic semiconductor chip and has a contact element electrically connected to the extended contact element, for example a contact element on the back side. Light emission can be caused laterally to the electronic semiconductor chip via the component.

[0041] With reference to the above-described design, the optoelectronic module can have two contact planes offset from each other, and thus have optoelectronic components arranged in offset planes. One contact plane can be formed by contact elements on the front side of the electronic semiconductor chip and, if necessary, the carrier, and the other contact plane can be formed by extended contact elements of the carrier at the back side of the electronic semiconductor chip. The optoelectronic component contacted by the extended contact element can be, for example, a (further) pixelated light-emitting semiconductor chip.

[0042] In another embodiment, the carrier has a current delivery device for supplying current to the optoelectronic device of the optoelectronic device structure. The current delivery device has a switching element electrically connected to the electronic semiconductor chip and controllable by the electronic semiconductor chip, and the switching element is used to activate the current supply. The switching element can be a transistor. In the design scheme, high current operation (for example, with a current intensity of several amperes) of the optoelectronic device supplied by the current delivery device can be achieved via the current delivery device of the carrier. Since the electronic semiconductor chip is only used to control the high current operation and not to provide electrical energy, a high current design of the electronic semiconductor chip is not required. Therefore, the electronic semiconductor chip can be implemented in a cost-effective manner. The current delivery device of the carrier can have a contact element and a conductor structure electrically connected to the contact element of the optoelectronic device. During operation, the current delivery device can be electrically connected to a suitable power supply.

[0043] The current supply device of the carrier can also form the current supply for a plurality of optoelectronic components. In this case, the current supply device can have a plurality of switching elements which can be controlled by the electronic semiconductor chip and which are used to activate the current supply of a plurality of components.

[0044] The electronic semiconductor chip and the carrier can be designed such that the front side of the electronic semiconductor chip is flush or substantially flush with the front side of the carrier laterally adjacent to the electronic semiconductor chip. The level difference between the two sides can be in the micrometer range or at most one micrometer. As a result, the optoelectronic component structure can be reliably mounted on the electronic semiconductor chip and the carrier, for example without the risk of the semiconductor chip breaking off.

[0045] In another embodiment, the carrier has a recess in which the electronic semiconductor chip is arranged. The recess can have such a depth that the front side of the electronic semiconductor chip, as given above, is (substantially) flush with the front side of the carrier that is laterally adjacent to the electronic semiconductor chip. If the carrier has an extended contact element at the back side of the electronic semiconductor chip that protrudes beyond the electronic semiconductor chip and the optoelectronic component structure has an optoelectronic component that is arranged adjacent to the electronic semiconductor chip and is contacted via the extended contact element, the associated components can also be arranged in the recess of the carrier.

[0046] The carrier can be formed in one piece or in multiple pieces. With reference to the latter variant, according to another embodiment, the carrier has a base part and another carrier part. The base part can be realized in a plate-like manner. The electronic semiconductor chip is arranged on the base part. The other carrier part is arranged laterally next to the electronic semiconductor chip on the base part. The other carrier part can, for example, have a frame-shaped configuration and surround the electronic semiconductor chip. In addition, the other carrier part can have the following thickness, that is, the front side of the electronic semiconductor chip is flush or substantially flush with the front side of the other carrier part that is laterally next to the electronic semiconductor chip. As long as the carrier has an extended contact element extending beyond the electronic semiconductor chip at the back side of the electronic semiconductor chip as given above, and the optoelectronic device structure has an optoelectronic device arranged next to the electronic semiconductor chip and contacted via the extended contact element, the relevant elements can also be arranged on the base part.

[0047] The carrier can have a semiconductor material, for example silicon, as a base material or carrier material of the carrier. In this case, the carrier can be, for example, a silicon chip. It is also possible to use ceramics or ceramic materials, such as silicon nitride, aluminum nitride or aluminum oxide. In this way, the carrier can have thermal expansion properties that can correspond to the thermal expansion properties of the electronic semiconductor chip and the optoelectronic component structure. In addition, the carrier can be thermally conductive and enable reliable heat dissipation.

[0048] The optoelectronic module can be designed not only for light emission but also for radiation detection. For example, radiation detection can be used to detect ambient light and control the light emission in coordination therewith. In addition, there is the possibility of performing optical communication based on light emission and radiation detection.

[0049] With regard to radiation detection, the optoelectronic device structure may have an optoelectronic device for detecting radiation. The device for detecting radiation may be a semiconductor chip with a photodiode structure. According to the above-described design, the device for detecting radiation may have contact elements electrically connected to contact elements of the electronic semiconductor chip and / or of the carrier. In this way, the device for detecting radiation can be electrically connected to the electronic semiconductor chip in a suitable manner.

[0050] With regard to radiation detection, it is also conceivable that the carrier has an integrated photodiode. In this case, the integrated photodiode can be electrically connected to the electronic semiconductor chip, in particular via one or more conductor structures of the carrier.

[0051] The advantageous embodiments and developments of the invention explained above and / or reproduced in the dependent claims can be used individually or in any desired combination with one another—except, for example, in cases of explicit dependencies or incompatible alternatives. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The characteristics, features and advantages of the present invention described above and the ways and methods of achieving these characteristics, features and advantages become clearer and easier to understand in conjunction with the following description of the embodiments, which are explained in detail in conjunction with the schematic diagrams. The accompanying drawings show:

[0053] Figures 1 to 3 side views showing different configurations of a light-emitting semiconductor chip;

[0054] Figure 4 A side view showing the connection of contact elements by a connecting agent;

[0055] Figure 5 shows a side view of a configuration of an optoelectronic module having a carrier, an electronic semiconductor chip and an optoelectronic component structure having a pixelated light-emitting semiconductor chip and at least one further light-emitting semiconductor chip, wherein regions are indicated in which light emission can be brought about in the region of the electronic semiconductor chip and transversely to the electronic semiconductor chip;

[0056] Figures 6 to 9 shows a side view of a further embodiment of an optoelectronic module, in which the light-emitting semiconductor chip has a contact element on the rear side which is connected to contact elements of the electronic semiconductor chip and of the carrier;

[0057] Figures 10 to 13 The optoelectronic module corresponds to Figures 6 to 9 A top view of

[0058] Fig.14 and Fig.15 A side view and a plan view show a further configuration of an optoelectronic module having a light-emitting semiconductor chip with a front-side contact element which is connected to a contact layer;

[0059] Fig.16 shows a side view of a further configuration of an optoelectronic module, in which contacting of the contact elements of the front side of the light emitting semiconductor chip is established via bonding wires;

[0060] Fig.17 and Fig.18 A side view showing a carrier and an electronic semiconductor chip, wherein a level difference exists between the components;

[0061] Fig.19 and Fig. 20 A perspective view shows a further configuration of an optoelectronic module having a pixelated light-emitting semiconductor chip and a further light-emitting semiconductor chip;

[0062] Figure 21 to Figure 25Different views showing a further configuration of an optoelectronic module having a pixelated light-emitting semiconductor chip which projects laterally beyond the electronic semiconductor chip;

[0063] Fig.26 shows a side view of a further configuration of an optoelectronic module having two pixelated light-emitting semiconductor chips, one of which projects laterally beyond the electronic semiconductor chip;

[0064] Figure 27 to Figure 29 Different views show a further configuration of an optoelectronic module, in which a carrier at the rear side of the electronic semiconductor chip has an extended contact element which projects laterally beyond the electronic semiconductor chip;

[0065] Fig.30 A side view shows a further configuration of an optoelectronic module, in which a carrier comprises a current supply device for supplying current to a light-emitting semiconductor chip arranged on the carrier;

[0066] Fig.31 A plan view showing another configuration of an optoelectronic module;

[0067] Fig.32 A plan view of a further embodiment of an optoelectronic module is shown, wherein the region in which the light emission and the radiation detection take place is indicated; and

[0068] Fig.33 and Fig.34 Show Fig.32 1 shows a side view of an optoelectronic module having a component for detecting radiation and an integrated photodiode of a carrier. DETAILED DESCRIPTION

[0069] The following schematic diagram describes a possible embodiment of an optoelectronic module 100 having an optoelectronic component structure 101 for light emission, an electronic semiconductor chip 110 for control, and a carrier 160. The module 100 is designed such that the emission of light radiation can be caused by the optoelectronic component structure 101 in the region of the electronic semiconductor chip 110 and transversely to the electronic semiconductor chip 110. It should be pointed out that the schematic diagrams may not be true to scale. Therefore, for a better understanding, the components and structures shown in the figures may be shown exaggeratedly or exaggeratedly.

[0070] As long as the accompanying drawings show side views of optoelectronic modules 100 and their components, it should be noted that the side pointing upward is called the front side, and the side pointing downward is called the back side. The front side of the module 100 and the light-emitting device also represents the light-emitting side, via which light emission can be carried out. For components present at the corresponding sides, such as contact elements, the names front side and back side are used in a corresponding manner. In the top view, the section line is partially indicated with respect to the section plane of the corresponding lateral sectional view. It should be pointed out in addition that the features and details mentioned with respect to one design scheme can also be applied with respect to other designs, and multiple designs and their features can be combined with each other. Consistent features can be described in detail here only with respect to one design scheme.

[0071] The optoelectronic device structure 101 includes at least one light-emitting optoelectronic device, which can be implemented in the form of an unpackaged light-emitting semiconductor chip. The relevant semiconductor chip can be a light-emitting diode chip or LED chip (light emitting diode) and can have contact elements arranged on one side (horizontal design) or contact elements arranged on both sides (vertical design). Exemplary designs are shown in FIG. Figures 1 to 3 The figure is illustrated in a side cross-sectional view.

[0072] Figure 1 A light-emitting semiconductor chip 140 according to a vertical design is shown. The semiconductor chip 140 has a semiconductor layer sequence 150, which has a first semiconductor region 151 on the front side of a first conductivity type, a second semiconductor region 153 on the back side of a second conductivity type different from the first conductivity type, and an active region 152 between the first and second semiconductor regions 151, 153. The first semiconductor region 151 can be n-conductive and the second semiconductor region 153 can be p-conductive. An inverse design with a first semiconductor region 151 of p-conductive and a second semiconductor region 153 of n-conductive is also possible. The active region 152 is used to generate light and can be formed in the form of a pn junction, a single quantum well structure or a multiple quantum well structure. In operation, light radiation 350 can be emitted (essentially) via the front side of the semiconductor chip 140. In addition, the semiconductor chip 140 has two contact elements 230, 231, via which the semiconductor chip 140 can be contacted and supplied with power to cause light emission and loaded with a suitable potential. Contact elements 231 for electrically connecting the first semiconductor region 151 are at the front side of the semiconductor chip 140, and contact elements 230 for electrically connecting the second semiconductor region 153 are at the back side of the semiconductor chip 140. Depending on the conductivity type of the semiconductor regions 151, 153, the contact elements 230, 231 may be n-type contacts and p-type contacts (or vice versa).

[0073] Figure 2 FIG. 1 shows a light emitting semiconductor chip 130 according to a horizontal design scheme. Figure 1 The semiconductor chip 140 of FIG. 1 is different from the semiconductor chip 140 of FIG. 1 in that two contact elements 230 , 231 for contacting and supplying the semiconductor chip 130 are arranged on its back side. In this embodiment, the contact element 230 is used to electrically connect the second semiconductor region 153, and the contact element 231 is provided for electrically connecting the first semiconductor region 151 of the semiconductor layer sequence 150. For this purpose, the semiconductor chip 130 also has a via 157 which is connected to the contact element 231 and extends through the semiconductor layer sequence 150 to the first semiconductor region 151, so that the first semiconductor region 151 can be electrically loaded via the contact element 231. In operation, the emission of optical radiation 350 can (essentially) take place via the front side of the semiconductor chip 130.

[0074] Figure 3 A pixelated design of a light-emitting semiconductor chip 120 is shown, which has a plurality of light-emitting pixels 155 arranged side by side and which can be individually controlled. For this purpose, the semiconductor chip 120 or its semiconductor layer sequence 150 has a structure consisting of a plurality of light-emitting regions 125 arranged side by side. In this case, the semiconductor layer sequence 150 comprises a first semiconductor region 151 connected to the front side and in each of the light-emitting regions 125, a second semiconductor region 153 on the back side and an active region 152 located between the first semiconductor region and the second semiconductor region 153. The active region 152 is designed to generate light, in the present case for generating primary light radiation 351.

[0075] The pixelated light-emitting semiconductor chip 120 also has a conversion layer 15 for radiation conversion arranged on the semiconductor layer sequence 150 at the front side. The conversion layer 159 is designed to partially convert primary light radiation 351 generated by the active region 152 of the light-emitting region 125 and emitted toward the conversion layer 159 during operation into secondary light radiation. The primary light radiation and the secondary light radiation that can be emitted together from the conversion layer 159 in the form of superimposed mixed radiation 350 can be blue radiation and yellow radiation. In this way, white light radiation 350 can be emitted via the front side of the semiconductor chip 120.

[0076] In the pixelated light-emitting semiconductor chip 120, each pixel 155 is formed by a light-emitting region 125 of the semiconductor layer sequence 150 and a region of the conversion layer 159 which is penetrated by the relevant light-emitting region 125 during operation with the aid of primary radiation 351. The pixel shape of the pixel 155 is predetermined by the lateral geometry of the light-emitting region 125 of the semiconductor layer sequence 150.

[0077] Furthermore, the pixelated light-emitting semiconductor chip 120 has a contact structure on the back side consisting of contact elements 220, 221, via which the semiconductor chip 120 can be contacted and supplied with power. The contact structure comprises individual contact elements 221, which are associated with each light-emitting region 125 and thus pixel 155, and which are respectively used for the electrical connection of the second semiconductor region 153. The contact structure also comprises connected contact elements 220, which are provided for the electrical connection of the first semiconductor region 151. Depending on the conduction type of the semiconductor regions 151, 153, the contact elements 220, 221 can be one n-type contact and a plurality of p-type contacts (or vice versa). The connected contact element 220 has a recess, in which the contact element 221 is arranged. The recess of the contact element 220 and the individual contact elements 221 can have a circular contour in a top view, so that there can be a Fig.10 and Fig.19 The design shown in Figure 2 Similarly to the semiconductor chip 130 of FIG. 1 , the semiconductor chip 120 has at least one via 157 connected to the connected contact element 220 and extending through the semiconductor layer sequence 150 to the first semiconductor region 151, so that the first semiconductor region 151 can be electrically loaded via the contact element 220. The via 157 can have a shape that is connected and surrounds the second semiconductor region 153 and the active area 152. Alternatively, a plurality of separate vias 157 can be formed.

[0078] Reference Figure 1 and Figure 2 With reference to the semiconductor chips 130, 140 shown in FIG. 1 (or also with reference to other usable designs of semiconductor chips not shown here), it is possible for the semiconductor chips to also have a conversion layer 159 for radiation conversion at the front side. In this case, primary optical radiation 351 can be generated by the active region 152 and partially or at least partially converted by the conversion layer 159 into secondary optical radiation (not shown).

[0079] The semiconductor chips 120 , 130 , 140 (or also other usable structural forms of semiconductor chips) may be so-called micro-LEDs or μLEDs. In this case, the semiconductor chips may have structures and sizes in the micrometer range.

[0080] The contact element on the rear side of the component or semiconductor chip of the optoelectronic module 100 can be electrically connected to the contact element opposite it via the electrically conductive connecting means 180 . Figure 41 and 2, for example, the contact element 201 is a contact element on the back side of an optoelectronic component or semiconductor chip, and the contact element 202 is an opposite contact element of the electronic semiconductor chip 100 or the carrier 160. The connecting agent 180 that connects the contact elements 201, 202 electrically, and thus also mechanically and thermally, can be a solder or an electrically conductive adhesive. In the following figure, for reasons of clarity, the connection of the contact elements that are respectively present and established via the connecting agent 180 is omitted.

[0081] Figure 5 A lateral sectional view of an optoelectronic module 100 according to a possible embodiment is shown. The optoelectronic module 100 comprises a carrier 160, an optoelectronic component structure 101 for light emission and an electronic semiconductor chip 110 for controlling the operation of the optoelectronic component structure 101. The carrier 160, which can also be referred to as an extended carrier or substrate, comprises a recess 161 in which the electronic semiconductor chip 110 is arranged on the carrier 160. The recess 161 has such a depth that the front side of the electronic semiconductor chip 110 is flush or substantially flush with a front side of the carrier 160 which is laterally adjacent to the semiconductor chip 110. By means of the optoelectronic component structure 101 mounted on the electronic semiconductor chip 110 and the carrier 160, the electronic semiconductor chip 110 and the carrier 160 are at least partially covered laterally with respect to the electronic semiconductor chip 110, so that the optoelectronic component structure 101 can cause emission of light radiation 350 in the region covering the electronic semiconductor chip 110 and in the region not covering the semiconductor chip 110 and laterally with respect to the semiconductor chip 110. For illustration purposes, in Figure 5 1 and 2 show additionally regions 300, 301 in which light emission can occur. In this case, region 300 refers to a region covering the electronic semiconductor chip 110, and region 301 is a region transverse to the electronic semiconductor chip 110. Region 301 can also be referred to as an expansion region.

[0082] The optoelectronic component structure 101 comprises a pixelated light-emitting semiconductor chip 120 and at least one further light-emitting component, for example, a light-emitting component which is designed in a different manner and / or with a different lateral dimension, for example, in the form of a semiconductor chip 130, as in Figure 5As indicated by the dashed line in the figure. The pixelated light-emitting semiconductor chip 120 is arranged on the electronic semiconductor chip 110. Light emission can be caused in the region of the electronic semiconductor chip 110 or in the region 300 via the semiconductor chip 120. This can involve fine pixelated light emission. Other light-emitting devices or semiconductor chips 130 are arranged on the electronic semiconductor chip 110 and / or the carrier substrate 160 at their sides. Light emission can be caused in the region transverse to the electronic semiconductor chip 110 or in the region 301 and, if necessary, also in the region of the electronic semiconductor chip 110 or in the region 300 via the light-emitting devices or semiconductor chips 130. For this purpose, at least one device or semiconductor chip 130 is at least in the region 301. Here, the relevant device 130 can also partially cover the electronic semiconductor chip 110 or extend into the region 300.

[0083] The electronic semiconductor chip 110 used as a control component can be a silicon chip and can be implemented as a CMOS component (complementary metal-oxide-semiconductor) and in the form of an application-specific integrated circuit (ASIC). The electronic semiconductor chip 110 has a plurality of metal contact elements 210, 211, 212, 213, 215 at the front side, wherein the contact elements 210, 211, 212, 213 are used to contact the contact elements of the optoelectronic device structure 101 or a part thereof, so that during operation, a suitable potential is applied to the relevant contact elements through the electronic semiconductor chip 110. The contact element 215 can be used in particular as a control contact for external contact of the electronic semiconductor chip 110, so as to supply the semiconductor chip 110 with electrical energy and perform data communication with the semiconductor chip 110, of which only one contact element is shown in the cross-sectional view shown, and the contact elements can be arranged side by side in a row (see, for example Fig.10 ). In this case, for example, a control signal can be transmitted to the electronic semiconductor chip 110 , via which control signal an operation of the optoelectronic component structure 101 controlled by the semiconductor chip 110 can be specified.

[0084] As in Figure 5As shown in , the electronic semiconductor chip 110 has contact elements 210, 211 coordinated with its contact elements 220, 221 with respect to the pixelated light-emitting semiconductor chip 120, i.e., has a plurality of individual contact elements 211 and connected contact elements 210 with cutouts, in which the individual contact elements 211 are arranged. Depending on the contact elements 220, 221 of the semiconductor chip 120, the cutouts of the connected contact elements 210 of the electronic semiconductor chip 110 and the individual contact elements 211 can have a circular contour in a top view, so that there can be a circular shape as in Fig.11 and Fig. 20 In addition, the contact element 210 can be an n-type contact and the contact element 211 can be a p-type contact (or vice versa). The oppositely connected contact elements 210, 220 and the separate contact elements 211, 221 of the two semiconductor chips 110, 120 are electrically connected to each other via a connecting agent. During operation, the contact elements 220, 221 of the pixelated light-emitting semiconductor chip 120 can be electrically loaded by the electronic semiconductor chip 110, so that the semiconductor chip 120 can be driven to emit light.

[0085] As in Figure 5 As further shown in , the electronic semiconductor chip 110 can have further front-side contact elements 212, 213 with respect to one or more further light-emitting devices or semiconductor chips 130 of the optoelectronic device structure 101, which contact elements can be n-type contacts or p-type contacts in a corresponding manner. As a result, the contact elements of the device can be contacted by the electronic semiconductor chip 110 and electrically loaded by the semiconductor chip 110 during operation. The corresponding situation applies to the carrier 160, which can also have metal contact elements 260, 261 at the front side transversely to the electronic semiconductor chip 110 in order to establish contact with contact elements of one or more further light-emitting devices or semiconductor chips 130 of the optoelectronic device structure 101. The contact elements 260, 261 can also be n-type contacts or p-type contacts. Here, the contact elements 260, 261 of the carrier 160 are electrically connected to the electronic semiconductor chip 110 in a suitable manner, as in Figure 5 As indicated by the dashed lines in FIG. 1 , during operation, a corresponding electrical potential can be applied to the contact elements of the optoelectronic component structure 101 contacted via the contact elements 260, 261 via the electronic semiconductor chip 110. The electrical connection between the contact elements 260, 261 of the carrier 160 and the electronic semiconductor chip 110 can be made, in particular, via metallic conductor structures of the carrier 160 (e.g. Fig.11 The front side conductor tracks 270 (shown in FIG. 2 ) are implemented.

[0086] exist Figure 5In the optoelectronic module 100 of FIG. 1 , contact elements 210 , 211 , 212 , 213 of the electronic semiconductor chip 110 for contacting the front side of the optoelectronic component structure 101 and contact elements 260 , 261 of the carrier 160 are located in a horizontal plane, thereby forming a contact plane. Components on the electronic semiconductor chip 110 can be electrically controlled via the contact elements 210 , 211 , 212 , 213 , and components partially or completely next to the semiconductor chip 110 can be electrically controlled via the contact elements 260 , 261 . Depending on the design of the optoelectronic module 100 and its optoelectronic device structure 101, different numbers of contact elements 210, 211, 212, 213, 215, 260, 261 can be provided, which can also include, for example, the presence of only one of the contact elements 212, 213 or the absence of any contact elements 212, 213 on the electronic semiconductor chip 110, or the presence of only one of the contact elements 260, 261 or the absence of any contact elements 260, 261 on the carrier 160.

[0087] In addition, as in Figure 5 As shown in , the electronic semiconductor chip 110 has a plurality of switches 115, by means of which the light-emitting operation of the optoelectronic device structure 101 can be controlled. The switches 115 can be implemented in the form of transistors. With reference to the pixelated light-emitting semiconductor chip 120, the individual contact elements 211 of the electronic semiconductor chip 110 are electrically connected to each switch 115. In this way, it is possible to selectively switch the switches 115 to selectively control the pixelated light-emitting semiconductor chip 120 (see Figure 4 ) of a single, multiple or all light emitting regions 125, and thus pixels 155, are powered on, and thus controlled to emit light. Figure 5 As shown in the figure, other contact elements 213, 261 of the electronic semiconductor chip 110 or the carrier 160 can also be electrically connected to each switch 115 of the electronic semiconductor chip 110, so that the component or semiconductor chip 130 contacted therewith can be selectively controlled in a corresponding manner by selective switching of the corresponding switch 115 to emit light.

[0088] Furthermore, the electronic semiconductor chip 110 has further electrical or electronic circuit structures which are electrically connected to the switch 115 and (partially via the switch 115) to the contact elements 210, 211, 212, 213, 215, 260, 261 and which can perform the above-mentioned functions via the circuit structures, such as operating the switch 115, providing a potential suitable for operating the optoelectronic device structure 101 and data communication or processing of control signals transmitted to the electronic semiconductor chip 110. The circuit structures are Figure 5Schematically shown in generalized form as an IC logic circuit 111 (integrated circuit).

[0089] The carrier 160 can have a semiconductor material, such as silicon, as a carrier material or base material. A design in which the carrier 160 consists of a ceramic material, such as silicon nitride, aluminum nitride or aluminum oxide, is also possible. As a result, the carrier 160 can have thermal expansion properties that correspond to the thermal expansion properties of the electronic semiconductor chip 110 and the optoelectronic component structure 101. In this way, different thermal expansions and the mechanical stresses associated therewith, which could result in damage to the optoelectronic module 100, can be avoided. In addition, the carrier 160 is suitable for reliable heat dissipation.

[0090] The optoelectronic module 100 can be used, for example, in a headlamp of an adaptive lighting system (AFS or μAFS, micro-structured adaptive front-lighting system) of a motor vehicle. For this application, the optoelectronic module 100 can be arranged in a projection or headlight module (not shown). Here, for example, a light pattern with a high spatial resolution can be provided at one location of the illuminated area, for example in its center, by a pixelated light-emitting semiconductor chip 120, and a light pattern with a lower spatial resolution can be provided at another location of the illuminated area, for example at the edge, by another light-emitting device or semiconductor chip 130. The semiconductor chip 120 can also be used to generate a low beam, and the other light-emitting device or semiconductor chip 130 can be used to implement a high beam or a driving direction display. Figure 5 In contrast to the other figures, in which clear spacings between the components of the optoelectronic component structure 101 are shown, the components may be positioned close to one another. This makes it possible to achieve a continuous illumination without visible boundaries between the components.

[0091] The configuration of the optoelectronic module 100 with the optoelectronic component structure 101, the electronic semiconductor chip 110 and the carrier 160 provides the possibility of high design flexibility. In this case, different designs of the optoelectronic module 100 with different light source geometries can be realized with the aid of respectively identical electronic semiconductor chips 110 and by different designs of the optoelectronic component structure 101 and, if necessary, the carrier 160. Since the described method is not accompanied by a change in the cost of the electronic semiconductor chip 110, different designs of the optoelectronic module 100 can be produced cost-effectively. The electronic semiconductor chip 110 can also have compact dimensions, which is also cost-effective.

[0092] According to the following figures, based on Figure 5, possible designs or modifications of the optoelectronic module 100 are described in detail, wherein the optoelectronic component structure 101 also includes a pixelated light-emitting semiconductor chip 120 and one or more further components. In this case, in particular, the arrangement and contacting of the further components are discussed. In addition, Figure 5 In contrast, a partially simpler illustration is used, in which details of the electronic semiconductor chip 110 are omitted, such as its switch 115. The same applies to the pixelated light-emitting semiconductor chip 120, for which only individual contact elements 221 are partially shown, and on the electronic semiconductor chip 110 side only individual contact elements 211 are shown.

[0093] Figure 6 1 shows a lateral sectional view of an optoelectronic module 100 according to one embodiment, wherein the optoelectronic component structure 101 has a light-emitting semiconductor chip 130 arranged on a carrier 160 next to a pixelated light-emitting semiconductor chip 120. In this case, the contact elements 230, 231 on the back side of the semiconductor chip 130 are electrically connected to the opposite contact elements 260, 261 of the carrier 160 via a connecting agent. Figure 5 As described, there is an electrical connection between the contact elements 260, 261 of the carrier 160 and the electronic semiconductor chip 110, so that the light-emitting semiconductor chip 130 can be supplied with power by the electronic semiconductor chip 110 and thus driven to emit light. The light emission of the semiconductor chip 130 occurs in a region transverse to the electronic semiconductor chip 110.

[0094] Reference Figure 6 It is possible that the optoelectronic component structure 101 comprises a plurality of, for example three, light-emitting semiconductor chips 130 mounted next to each other on a carrier substrate 160, as in Fig.10 As illustrated in the front side top view. Fig.10 Also shown is the above-described embodiment of the electronic semiconductor chip 110, which has a plurality of contact elements 215 arranged next to one another. Furthermore, contact elements 230, 231 on the rear side of the light-emitting semiconductor chip 130 and a contact structure on the rear side of the pixelated light-emitting semiconductor chip 120 are shown, which have interconnecting contact elements 220 and separate contact elements 221 arranged in recesses of the contact elements 220.

[0095] according to Figure 6 , the contacting of the contact elements 230, 231 of the three light-emitting semiconductor chips 130 is established via two contact elements 260, 261 of the carrier 160 in each case. The contact elements 260, 261 can be electrically connected to the electronic semiconductor chip 110 in particular via a conductor structure of the carrier 160. For further illustration, Fig.11 Shown corresponding to Fig.10 1 shows a top view of an exemplary embodiment suitable for this, according to which conductor tracks 270 on the front side of a carrier 260 are used. Here, the three light-emitting semiconductor chips 130 of the component structure 101 are indicated only by dashed lines. The pixelated light-emitting semiconductor chip 120 is also omitted, so that the contact structure of the electronic semiconductor chip 110 for contacting the semiconductor chip 120, i.e. the interconnecting contact elements 210 and the separate contact elements 211 arranged in the recesses of the contact elements 210, can be seen.

[0096] As in Fig.11 As shown, the three contact elements 260 of the carrier 160 can be electrically connected to the contact elements 215 of the electronic semiconductor chip 110 in that the carrier 160 has short conductor tracks 270 connecting the contact elements 260 and longer conductor tracks 270 leading to the contact elements 215. At this point, the contact elements 215 and the conductor tracks 270 extending to the contact elements 215 are connected to one another via an electrically conductive connecting structure 181. The connecting structure 181 can be, for example, a bonding wire or a metallic connecting layer. With regard to the other three contact elements 261 of the carrier 160, one contact element 261 is electrically connected to another contact element 215 of the electronic semiconductor chip 110 via the conductor tracks 270 and the connecting structure 181. For the other two contact elements 261, a common electrical connection to another contact element 215 of the semiconductor chip 110 is established via the conductor tracks 270 and the connecting structure 181. Fig.11 In the design shown in , a common potential can be applied to the contact elements 260 via the electronic semiconductor chip 110 and via corresponding connections between the contact elements 260, 261 of the carrier 160 and the corresponding contact elements 215 of the electronic semiconductor chip 110, and another potential can be applied to the individually connected contact element 261 and the two commonly connected contact elements 261. Thus, among the three light-emitting semiconductor chips 130, one semiconductor chip 130 can be individually driven and two semiconductor chips 130 can be jointly driven by the electronic semiconductor chip 110 for light emission.

[0097] exist Fig.11 1 and 2 show a further embodiment which is conceivable with regard to external contacting of the electronic semiconductor chip 110. In this case, the carrier 160 has a contact element 265 and a conductor track 271 which is electrically connected thereto and leads to the front side of the contact element 215 of the electronic semiconductor chip 110 and is electrically connected to the contact element 215 via the connecting structure 181. Fig.11, the connection is illustrated only for contact element 215 and contact element 265 and is indicated only by dashed lines for the other contact elements 215 , 265 . In this configuration, an electrical supply of the electronic semiconductor chip 110 and a data communication with the semiconductor chip 110 can be achieved via the contact elements 265 of the carrier 160 .

[0098] Reference Figure 6 , Fig.10 and Fig.11 A possible modification is to configure the optoelectronic module 100 such that one or more light-emitting semiconductor chips 130 mounted on the carrier 160 partially overlap the electronic semiconductor chip 110 , so that light emission can also be caused by the semiconductor chip 130 in the region of the electronic semiconductor chip 110 . Fig.11 , the modification consists in that, by means of a corresponding configuration of the conductor tracks 270 for all contact elements 261 of the carrier 160, a common electrical connection to a contact element 215 of the electronic semiconductor chip 110 is established, or alternatively, individual electrical connections to a plurality of contact elements 215 of the electronic semiconductor chip 110 are established, so that the semiconductor chip 130 can be controlled jointly or individually to emit light through the semiconductor chip 110 (not shown respectively).

[0099] The carrier 160 of the optoelectronic module 100 can be implemented in one piece and can have a recess 161 for accommodating the electronic semiconductor chip 110 as described above. A multi-piece design of the carrier 160 is also possible. For illustration purposes, Figure 7 The optoelectronic module 100 is shown in a lateral cross-sectional view. Figure 6 Another consistent design. In this case, the carrier 160 has a plate-shaped base part 162 and a further carrier part 163. The electronic semiconductor chip 110 is arranged on the base part 162. The further carrier part 163 has a frame-shaped configuration that surrounds the recess and is arranged laterally next to the electronic semiconductor chip 110 on the base part 162, so that the semiconductor chip 110 is laterally surrounded by the carrier part 163. The further carrier part 163 has such a thickness that the front side of the electronic semiconductor chip 110 is flush or substantially flush with the front side of the carrier part 163.

[0100] In the case of a multi-part design of the carrier 160, the details described above and also below can be applied in a corresponding manner. Thus, both carrier parts 162, 163 or at least carrier part 163 can consist of silicon or a ceramic material. As long as the carrier 160 has contact elements 260, 261, as in Figure 7As shown in FIG. 1 , the contact elements 260, 261 may be arranged on the carrier component 163. Furthermore, the contact elements 260, 261 may be electrically connected to the electronic semiconductor chip 110 in a suitable manner, for example according to Fig.11 This can be achieved in particular by means of conductor tracks which are located on the front side and are arranged on the carrier part 163 .

[0101] Furthermore, other modifications are possible for the carrier 160. For example, the further carrier component 163 may not have a shape that surrounds the electronic semiconductor chip 110, but may have another shape that, for example, partially surrounds or does not surround the semiconductor chip 110, or may also have a plate-like shape. Furthermore, designs with a greater number of carrier components stacked one above the other are conceivable. It is also possible to realize an electrical connection of the contact elements 260, 261 on the front side of the carrier 160 via other conductor structures of the carrier 160, such as vias and conductors or printed conductor structures guided in the carrier 160 (not shown in each case). The multi-piece design of the carrier 160 can be applied in a corresponding manner to the designs of the optoelectronic module 100 explained below.

[0102] Figure 8 A lateral sectional view of an optoelectronic module 100 according to one design is shown, wherein an optoelectronic device structure 101 has a light-emitting semiconductor chip 130, which is arranged on an electronic semiconductor chip 110 and a carrier 160 next to a pixelated light-emitting semiconductor chip 120. Here, the contact element 231 on the back side of the semiconductor chip 130 is electrically connected to the opposite contact element 213 of the electronic semiconductor chip 110, and the contact element 230 on the back side of the semiconductor chip 130 is electrically connected to the opposite contact element 260 of the carrier 160. The electrical connection is established via a connecting agent in each case. As described above, there is an electrical connection between the contact element 260 of the carrier 160 and the electronic semiconductor chip 110. In this way, the light-emitting semiconductor chip 130 can be powered by the semiconductor chip 110 via its contact element 213 and via the contact element 260 of the carrier 160, so that it can be driven to emit light. In this configuration, the electronic semiconductor chip 110 and the carrier 160 transversely to the semiconductor chip 110 are covered in one region by the semiconductor chip 130 in the form of contact bridges, so that light emission from the semiconductor chip 130 is possible in the region of the electronic semiconductor chip 110 and transversely to the semiconductor chip 130 .

[0103] about Figure 8 It is also possible that the optoelectronic component structure 101 has a plurality of, for example three, semiconductor chips 130 mounted side by side on the electronic semiconductor chip 110 and the carrier 160, as in Fig.12Here, three semiconductor chips 130 are indicated by dashed lines, and the pixelated light-emitting semiconductor chip 120 is omitted. Figure 8 , the three semiconductor chips 130 are contacted via the contact elements 260 of the carrier 160 and the contact elements 213 of the electronic semiconductor chip 110, respectively. Fig.12 As further shown in FIG. 1 , the three contact elements 260 of the carrier 160 can be electrically connected to the contact elements 215 via short conductor tracks 270 connecting the contact elements 260 and longer conductor tracks 270 leading to the contact elements 215 of the electronic semiconductor chip 110, as well as the connecting structure 181. In this way, a common potential can be applied to the contact elements 260 via the electronic semiconductor chip 110 and the connection established between its contact elements 215 and the contact elements 260 of the carrier 160. In addition, the semiconductor chip 110 can respectively apply another potential to its contact elements 213. As a result, the three light-emitting semiconductor chips 130 can be driven to emit light respectively.

[0104] Configurations are possible for the optoelectronic module 100 in which the optoelectronic component structure 101 has a light-emitting component which is mounted on the electronic semiconductor chip 110 next to the pixelated light-emitting semiconductor chip 120 and is contacted via the same. Figure 5 The semiconductor chip 130 indicated by the dashed line and located next to the semiconductor chip 120 is indicated in FIG. In this case, the relevant semiconductor chip 130 can be contacted via the contact elements 212 , 213 of the electronic semiconductor chip 110 and can thus be electrically driven by the semiconductor chip 110 .

[0105] In a possible development, such a light emitting device can additionally extend beyond the electronic semiconductor chip 110 and also cover the carrier 160 in regions transverse to the semiconductor chip 110, so that light emission can also be caused transversely to the semiconductor chip 110. Fig. 9 and Fig.13 1 and 2, which are sectional views and plan views of an optoelectronic module 100 implemented in the above sense. The optoelectronic component structure 101 comprises two light-emitting semiconductor chips 130, 132, each of which has two rear-side contact elements 230, 231, which are arranged on the pixelated light-emitting semiconductor chip 120 ( Fig.13The semiconductor chip 132 has a horizontal design corresponding to the semiconductor chip 130 and differs from the semiconductor chip 130 by a different top view shape with larger lateral dimensions and a different arrangement of the contact elements 230, 231. The contact elements 231 on the back side of the semiconductor chip 132 are aligned with the opposite contact elements 213 of the electronic semiconductor chip 110 (see Fig. 9 and Fig.13 ) are electrically connected, and the contact element 230 of the other rear side (not shown) of the semiconductor chip 132 is electrically connected to the other opposite contact element 212 of the semiconductor chip 110 (see Fig.13 ) are electrically connected. The connection is established via a connecting agent. In the further semiconductor chip 130, there is an arrangement and contacting of the contact element 260 of the carrier 160 and the further contact element 213 of the electronic semiconductor chip 110, as described above according to Figure 8 Here, the contact element 260 of the carrier 160 is connected to the contact element 215 of the electronic semiconductor chip 110 via the conductor track 270 and the connecting structure 181. During operation, a corresponding potential can be applied to the contact elements 212, 213, 260 via the semiconductor chip 110 in order to drive the semiconductor chips 130, 132 for light emission.

[0106] As in Fig. 9 As shown in FIG, the light emitting semiconductor chip 132 protruding beyond the electronic semiconductor chip 110 can be additionally mounted on the carrier 160. In this case, the semiconductor chip 132 and the carrier 160 are connected to each other in a purely thermally conductive manner, as in FIG. Fig. 9 As illustrated in FIG. 1 according to the layered thermal connection structure 190. The thermal connection structure 190 can additionally dissipate heat during operation of the semiconductor chip 132 via the carrier 160. The thermal connection structure 190 can in particular include a connecting agent 180 in the form of a solder. In addition, as described further below in conjunction with Fig.25 The described design can be applied to the connecting structure 190. As long as there is a corresponding Figure 7 The multi-piece design can establish a connection with another supporting component 163 via the connecting structure 190.

[0107] A possible design for the optoelectronic module 100 is one in which the optoelectronic component structure 101 comprises one or more light-emitting semiconductor chips with contact elements arranged on both sides, such as according to Figure 1 For illustration purposes, Fig.14 and Fig.151 and 2 depict a design of an optoelectronic module 100 realized in this sense in a lateral sectional view and a plan view. In this case, the optoelectronic component structure 101 includes a plurality of light-emitting semiconductor chips 130, 140, 141, 142 next to the pixelated light-emitting semiconductor chip 120. In the case of a semiconductor chip 130 having only a back side and contacting elements (not shown) via the electronic semiconductor chip 110 and the carrier 160, there may be a corresponding Figure 8 design plan.

[0108] The other light emitting semiconductor chips 140, 141, 142 are arranged vertically, with reference to Figure 1 The design solution described is realized, and as in Fig.14 As shown in the figure, the semiconductor chips 140, 141, 142 each have a back-side contact element 230 and a front-side contact element 231. The semiconductor chips 140, 141, 142 differ from one another in different top view shapes and lateral dimensions. The back-side contact elements 230 of the semiconductor chips 140, 141, 142 are each electrically connected to the opposite contact elements 213 of the electronic semiconductor chip 110 via a connecting agent. In addition, the semiconductor chips 140, 141, 142 extend beyond the electronic semiconductor chip 110 and thus cover the carrier 160 in a region transverse to the semiconductor chip 110, so that during operation, light emission can be caused by the semiconductor chips 140, 141, 142 in the region of the electronic semiconductor chip 110 and transversely thereto. With respect to the carrier 160, the semiconductor chips 140, 141, 142 can additionally be connected to the carrier 160 in a thermally conductive manner and thus be mounted on the carrier 160. In Fig.14 1 illustrates the configuration of a semiconductor chip 140 for connection to a carrier 160 via a layered thermal connection structure 190 . Such a configuration can also be implemented for other semiconductor chips 141 , 142 .

[0109] As in Fig.14 As further shown in FIG. 1 , the front-side contact elements 231 of the light-emitting semiconductor chips 140 , 141 , 142 are electrically connected in a common manner to the contact elements 260 of the carrier 160 in that the optoelectronic module 100 has a planar contact layer 187 connected to the contact elements 231 , 260 . Fig.15The contact layer 187, not shown in the figure, can at least partially cover the contact element 260 and the semiconductor chips 140, 141, 142. The contact layer 187, also called PI contact (planar interconnect), can be realized transparently and can be realized in the form of an ITO layer (indium tin oxide) for this purpose. The contact element 260 of the carrier 160, which can have an elongated configuration in a top view, is also electrically connected to the electronic semiconductor chip 110 in a suitable manner, so that the contact elements 231 on the front side of the semiconductor chips 140, 141, 142 can be electrically loaded together through the semiconductor chip 110 via the contact element 260 and the contact layer 187. According to the above description, the connection can be established via the printed conductor structure 270 and the connecting structure 181, so that the contact element 260 of the carrier 160 can be electrically connected to the contact element 215 of the semiconductor chip 110 (not shown). During operation, a corresponding potential can be applied to the contact elements 213 , 260 via the electronic semiconductor chip 110 in order to drive the semiconductor chips 130 , 140 , 141 , 142 to respectively emit light.

[0110] The contacting of the contact elements 231 of the front side of the light-emitting semiconductor chip formed in the form of a vertical structure can be achieved not only by using the contact layer 187, but also in the form of vias, for example. Fig.16 A further configuration of an optoelectronic module 100 is shown which has a light-emitting semiconductor chip 140 mounted on an electronic semiconductor chip 110 and a carrier 160 . An electrical connection between the front-side contact elements 231 of the semiconductor chip 140 and the contact elements 260 of the carrier 160 is produced via a bonding wire 185 .

[0111] In the optoelectronic module 100, it is provided that the front side of the electronic semiconductor chip 110 is flush or substantially flush with the front side of the respectively used carrier 160 which is laterally adjacent to the semiconductor chip 110. It is possible that the semiconductor chip 110 protrudes relative to the carrier 160 or the carrier 160 protrudes relative to the semiconductor chip 110 and in this respect, as in Fig.17 and Fig.18 As shown in the lateral section in FIG. 1 , there is a level difference 330 between the components 110 , 160 . The level difference 330 can be in the micrometer range or a maximum of 1 μm. As a result, the optoelectronic component structure 101 can be reliably mounted on the electronic semiconductor chip 110 and the carrier 160 , for example without the risk of the semiconductor chip breaking off.

[0112] The carrier 160 of the optoelectronic module 100 can have an electrically non-conductive or electrically insulating carrier material or base material. This is the case, for example, when using ceramic materials such as silicon nitride, aluminum nitride or aluminum oxide as mentioned above. In this embodiment, the contact elements 260, 261 of the carrier 160 can be connected in particular via conductor structures of the carrier 160, such as conductor tracks 270 (see, for example, Fig.11 ) is electrically connected to the electronic semiconductor chip 110.

[0113] In a variant, the carrier 160 can be designed to be electrically conductive at least in the region of its front side and, for this purpose, can include an electrically conductive carrier material, for example a doped semiconductor material such as doped silicon. In this configuration, it is possible to realize an electrical connection to the electronic semiconductor chip 110 for one or more contact elements of the carrier 160 not via conductors or conductor track structures, but in particular via the electrically conductive carrier material itself. Fig.12 and Fig.13 , this can be considered, for example, for the contact element 260. In this case, the printed conductor 270 can be omitted and the electronic semiconductor chip 110 or the contact element 215 of the semiconductor chip 110 can be electrically connected to the carrier 160 or to an electrically conductive carrier material, so that the contact element 260 can be loaded with a common potential via the semiconductor chip 110. For the connection between the carrier 160 and the semiconductor chip 110, the carrier 160 can have a further contact element, which can be connected to the contact element 215 of the semiconductor chip 110 via the connecting structure 181. The common potential can be an n-type potential or a p-type potential as well as a ground potential or a ground potential. It is also conceivable that for one or more contact elements of the carrier 160, such as in Fig.12 and Fig.13 As with the contact element 260 shown in FIG. 1 , no electrical connection to the electronic semiconductor chip 110 is provided. Instead, a ground potential can be applied externally to the contact element 260 or the carrier 160. For this purpose, the carrier 160 can have further contact elements (not shown in each case) for external contacting.

[0114] Fig.19 1 shows a perspective view of an optoelectronic module 100 according to another configuration, which can be used in a headlight of a motor vehicle. The optoelectronic component structure 101 of the module 100 includes a pixelated light-emitting semiconductor chip 120 arranged on an electronic semiconductor chip 110. Fig.19 In FIG. 1 , the semiconductor chip 120 is shown transparently, so that the contact structure on the back side of the semiconductor chip 120 is shown, which has a continuous contact element 220 and a separate contact element 221 arranged in a recess of the contact element 220. The semiconductor chip 120 is shown in a transparent manner. Figure 5The device structure 101 further comprises a plurality of light-emitting semiconductor chips 130, 131 which are arranged on the electronic semiconductor chip 110 and the carrier 160 next to the semiconductor chip 120 and are contacted via the semiconductor chip 110 and the carrier 160. The semiconductor chips 130, 131 have contact elements 230, 231 on the back side (not shown) and are connected in a manner corresponding to the semiconductor chip 120. Figure 8 The semiconductor chips 120, 130, 131 are mounted on the semiconductor chip 110 and the carrier 160 in a manner. The portion of the semiconductor chips 130, 131 covering the carrier 160 is greater than the portion covering the electronic semiconductor chip 110. The semiconductor chips 120, 130, 131 are positioned relatively close to one another so that a continuous illumination without visible boundaries is possible. The semiconductor chip 131 differs from the other semiconductor chips 130 by a different top view shape with larger lateral dimensions. Fig.19 In an optoelectronic module 100, light emission can be caused in the region of the electronic semiconductor chip 110 by means of the pixelated light-emitting semiconductor chip 120, and light emission can be caused in the region of the semiconductor chip 110 and in regions transverse thereto by means of the light-emitting semiconductor chips 130, 131. It is possible to realize low beam by means of the semiconductor chip 120, high beam by means of the semiconductor chip 130, and a driving direction display by means of the semiconductor chip 131.

[0115] Fig. 20 Shown in the local Fig.19 Another stereoscopic view of the optoelectronic module 100 without semiconductor chips 120, 130. Here, a contact structure of the electronic semiconductor chip 110 coordinated with the pixelated light-emitting semiconductor chip 120 is shown, which has a connected contact element 210 and a separate contact element 211 arranged in a recess of the contact element. Also shown are contact elements 213 of the semiconductor chip 110 and contact elements 260 of the carrier 160, which are provided for contacting the semiconductor chip 130. For contacting the semiconductor chip 131, such a pair consisting of contact elements 213, 260 is also present. According to the above description, the contact element 260 of the carrier 160 can be electrically connected to the electronic semiconductor chip 110 in a suitable manner (not shown). In addition, the contact element 210 and the contact element 260 can be n-type contacts, and the contact elements 211, 213 can be p-type contacts.

[0116] according to Fig. 20, the contact elements 260 of the carrier 160 have larger lateral dimensions than the contact elements 213 of the electronic semiconductor chip 110. The contact elements 230, 231 of the back sides of the semiconductor chips 130, 131, which are contacted via this, have correspondingly different lateral dimensions (not shown). In this way, reliable heat dissipation via the carrier 160 is possible during operation of the light-emitting semiconductor chips 130, 131. Thus, the semiconductor chips 130, 131 can be, for example, efficient light-emitting diode chips.

[0117] exist Fig.19 In the optoelectronic module 100 (and also the embodiments of the previous figures), light emission of the pixelated light-emitting semiconductor chip 120 can be brought about only in the region of the electronic semiconductor chip 110. In contrast, embodiments are conceivable which extend beyond the electronic semiconductor chip 110 in order to bring about light emission also in regions transverse to the semiconductor chip 110, corresponding to the light-emitting semiconductor chips 130, 131.

[0118] For illustration purposes, Fig.21 A perspective view of an optoelectronic module 100 designed in the above sense is shown. Fig.19 The present invention is a modification of the module 100 of and is substantially identical to the module. Fig.21 The optoelectronic module 100 has, instead of the pixelated light-emitting semiconductor chip 120, a pixelated light-emitting semiconductor chip 121 which projects laterally beyond the electronic semiconductor chip 110 and thus covers the carrier 160 in an overlapping region 320 transverse to the semiconductor chip 110. The design is also based on Fig. 22 The back view of Fig.23 and Fig.24 The three-dimensional partial image and Fig.25 The side cross-sectional view of Fig. 22 In the rear view of FIG. 1 , the carrier 160 is transparent and shows its outer contour, so that the contact elements 230 on the back sides of the semiconductor chips 130 , 131 and a part of the contact structure on the back side of the semiconductor chip 121 are depicted. Fig.21 and Fig.23 In FIG. 1 , the pixelated light-emitting semiconductor chip 121 is shown transparently, so that the contact structure of the back side of the semiconductor chip 121 is shown. Fig.23 and Fig.24 The carrier 160 is omitted.

[0119] The contact structure on the back side of the pixelated light-emitting semiconductor chip 121 is essentially identical to the contact structure on the back side of the pixelated light-emitting semiconductor chip 120 described above, i.e. the semiconductor chip 121 has a connected contact element 220 with a recess and a separate contact element 221 arranged in the recess. The design with the contact element 221 exists in the region of the electronic semiconductor chip 110. With regard to the overlapping region 320, the semiconductor chip 121 has a further separate contact element 222 in the edge region, which is likewise arranged in the recess of the connected contact element 220 provided therein. The contact element 222 and the associated recess of the contact element 220 have an elongated or oval configuration and are larger in size than the other circular separate contact elements 221 and the associated recess of the contact element 220. This is according to Fig.21 and Fig.23 It becomes clear that the contact structure of the back side of the semiconductor chip 121 is drawn therein. Here, the circular individual contact element 221 is only located in the region of the electronic semiconductor chip 110. In contrast, the elongated individual contact element 222, which is also located in the region of the semiconductor chip 110, and the connected contact element 220 of the semiconductor chip 121 additionally protrude laterally beyond the electronic semiconductor chip 110 and are thus also present in the overlapping region 320. In this way, the electrical loading of the semiconductor layer sequence of the semiconductor chip 121 can also be achieved via its contact elements 220, 222 also in the overlapping region 320. Corresponding to the contact element 221, the contact element 222 can have a p-type contact.

[0120] Like the pixelated light-emitting semiconductor chip 120 described above, the pixelated light-emitting semiconductor chip 121 has a light-emitting region 125 and thus has pixels 155 (see Figure 3 ). In conjunction with the elongated contact element 222, the luminous region 125 and thus the pixel 155 belonging to the contact element 222 has an elongated configuration and thus has a larger size than the luminous region 125 and the pixel 155 belonging to the other contact elements 221. Fig.25, the semiconductor chip 121 has luminous regions 125 and pixels 155 with different lateral dimensions, namely luminous regions 125 and pixels 155 with relatively small dimensions present in the region of the electronic semiconductor chip 110, and, corresponding to the elongated contact elements 222, elongated luminous regions 125 and pixels 155 with larger lateral dimensions present in the edge region, which protrude beyond the electronic semiconductor chip 110. Light emission can be brought about in the region of the electronic semiconductor chip 110 via the smaller pixels 155, and light emission can be brought about in the edge region of the semiconductor chip 110 and in a region transverse to the semiconductor chip 110 or in the overlap region 320 via the elongated pixels 155.

[0121] The electrical contact of the pixelated light-emitting semiconductor chip 121 is established via the electronic semiconductor chip 110 according to the pixelated light-emitting semiconductor chip 120 explained above, in that the communicating contact elements 210, 220 and the individual contact elements 211, 221, 222 of the two semiconductor chips 110, 121 are electrically connected to one another via a connecting agent. The individual elongated contact element 222 of the semiconductor chip 121 is electrically connected to the opposite individual contact element 211 of the semiconductor chip 110, which is arranged at the edge of the electronic semiconductor chip 110, as described in accordance with Fig.25 As becomes clear, the other individual contact elements 221 of the semiconductor chip 121 are electrically connected to the other opposite individual contact elements 211 of the semiconductor chip 110. Fig.25 In the embodiment, according to the previous sectional view, the connected contact elements 210, 220 of the two semiconductor chips 110, 121 are omitted for reasons of clarity. In this case, the connected contact elements 220 of the semiconductor chip 121 extend laterally beyond the electronic semiconductor chip 110 and its connected contact elements 210 (see Fig.23 ).

[0122] As in Fig.25 As shown in , the pixelated light-emitting semiconductor chip 121 protruding beyond the electronic semiconductor chip 110 can be additionally mounted on the carrier 160 in the overlapping region 320 and for this purpose be connected to the carrier 160 only in a thermally conductive manner via the layered thermal connection structure 190. In this way, heat dissipation can be achieved at this location via the carrier 160 during operation of the semiconductor chip 121. As shown in Fig.25As shown in the enlarged detail of , the connection structure 190 may include a connection medium 180, for example a solder. In order to prevent an undesired electrical connection or a short circuit due to the connection medium 180, the semiconductor chip 121 may have an insulating layer 191 on the back side in the region of the thermal bond, for example in the form of an oxide layer or a nitride layer. In addition, the carrier 160 may have a metal connection element 192, which may be connected to the semiconductor chip 121 or the insulating layer 191 via the connection medium 180. As long as there is a corresponding Figure 7 The multi-piece design can establish a connection with another supporting component 163 via the connecting structure 190.

[0123] For the optoelectronic module 100, a design is conceivable in which the optoelectronic component structure 101 has a plurality of pixelated light-emitting semiconductor chips arranged side by side. The pixelated light-emitting semiconductor chips can only be arranged on the electronic semiconductor chip 110 (not shown). Fig.26 Another feasible design scheme is shown in the side sectional view. Figure 21 to Figure 25 The device structure 101 has a pixelated light-emitting semiconductor chip 120 arranged on an electronic semiconductor chip 110 and, laterally relative thereto, has a further pixelated light-emitting semiconductor chip 122 mounted on the semiconductor chip 110 and a carrier 160, which projects laterally beyond the electronic semiconductor chip 110 and thus covers the carrier 160 in an overlapping region 320 transverse to the semiconductor chip 110. The two semiconductor chips 120, 122 can be understood as a multi-part embodiment of the pixelated semiconductor chip 121 described above, such as according to Fig.25 and Fig.26 The contrast becomes clear.

[0124] Here, the pixelated light-emitting semiconductor chip 122 protruding beyond the electronic semiconductor chip 110 has the design described above and implemented in the semiconductor chip 121 with respect to the overlapping area 320, namely a separate elongated contact element 222 and the associated elongated light-emitting area 125 and the pixel 155. The other semiconductor chip 120 has a separate contact element 221 and a pixel 155, which are smaller in size than the contact element 222 and the pixel 155 of the semiconductor chip 122. In addition, corresponding to the semiconductor chip 120, the protruding semiconductor chip 122 has a connected contact element 220 with a not shown cutout, in which the separate elongated contact element 222 is arranged. The separate contact element 222 of the semiconductor chip 122 is electrically connected to the separate contact element 211 of the electronic semiconductor chip 110, which is arranged at the edge and is opposite. The connected contact element 220 of the protruding semiconductor chip 122 can be electrically connected to one or more contact elements of the electronic semiconductor chip 110 (not shown). The pixelated light-emitting semiconductor chip 122 is additionally mounted on the carrier 160 and is thermally connected to the carrier via the thermal connection structure 190. Another pixelated light-emitting semiconductor chip 120 is provided in a manner corresponding to Figure 5 During operation, light emission can be caused in the region of the electronic semiconductor chip 110 via the semiconductor chip 120 and light emission can be caused in the edge region of the semiconductor chip 110 and laterally to the semiconductor chip 110 or in the overlap region 320 via the semiconductor chip 122 .

[0125] According to the optoelectronic module 100 Figure 5 With the design shown in the following figure, the electronic semiconductor chip 110 has contact elements on the front side. The following design is also possible, in which the semiconductor chip 110 has contact elements at the front side and at the opposite back side. Here, the contact elements on the front side can be used to control the operation of the optoelectronic device structure 101, as explained above, and the contact elements on the back side can be used to supply electrical energy to the semiconductor chip 110 and to perform data communication with the semiconductor chip 110. For this purpose, the contact elements on the back side of the semiconductor chip 110 can be electrically connected to the contact elements and conductor structures of the carrier 160. It is also possible to use the contact elements on the back side of the semiconductor chip 110 to control the operation of the optoelectronic device of the device structure 101.

[0126] For illustration purposes, Figure 27 to Figure 29 A top view, a rear view and a lateral cross-sectional view of an optoelectronic module 100 designed in the above sense are shown, which is based on Figure 21 to Figure 25 A refinement of the described module 100. Fig.28In the rear view of FIG. 1 , the carrier 160 is shown partially transparently. According to the configuration explained above, the electronic semiconductor chip 110 has front-side contact elements 210, 211, 213, 215, in which the contact elements are Fig. 27 and Fig.29 21. The contact elements 211, 215 are shown in FIG. 21. As for the contact elements 210, 211, 213 provided for contacting the pixelated light-emitting semiconductor chips 121 and 130, 131, there are Fig. 20 The semiconductor chips 130 , 131 are here additionally contact-connected via contact elements 260 of the carrier 160 .

[0127] In addition, as in Fig.28 and Fig.29 As shown in , the electronic semiconductor chip 110 has contact elements 217, 218 on the back side. According to the illustrated embodiment, the contact element 218 is designed to be round and the contact element 217 has an elongated shape. In the embodiment shown here, the carrier 160 with the recess 161 has a contact structure with contact elements 267, 268, 269, which is coordinated with the contact structure on the back side of the electronic semiconductor chip 110, as shown in Fig.28 and Fig.29 The contact elements 267, 268, 269 are located in the region of the bottom of the recess 161 of the carrier 160, as shown in Fig.29 As shown in Fig.28 In the figure, only the contact element 269 of the carrier 160 is drawn, which contact element is also referred to as the extended contact element 269 below. Another possible name is fan-out contact. In the electronic semiconductor chip 110 mounted on the carrier 160 in the recess 161, the contact element 217 and part of the contact element 218 of the semiconductor chip 110 are electrically connected to the opposite contact elements 267, 268 of the carrier 160, and the contact element 218 present at the edge of the semiconductor chip 110 is electrically connected to the extended contact element 269 of the carrier 160 opposite to the contact element via a connecting agent.

[0128] It is possible to use the contact elements 267, 268 of the carrier 160 and the contact elements 217, 218 of the electronic semiconductor chip 110 connected thereto to supply power to the semiconductor chip 110 and to carry out data communication with the semiconductor chip 110. In this case, the carrier 160 can have, for example, further contact elements (for example, contact elements 265, as in the example) on the front side outside the recess 161, which can be contacted from the outside. Fig.11), which are electrically connected to contact elements 267 , 268 via suitable conductor structures of carrier 160 (not shown).

[0129] As per Fig.28 and Fig.29 As becomes clear in FIG, the extended contact element 269 of the carrier 160 has an elongated configuration and projects laterally beyond the semiconductor chip 110 at the rear side of the electronic semiconductor chip 110. At this point, in the recess 161 of the carrier 160, laterally next to the electronic semiconductor chip 110, a further component of the optoelectronic component structure 101 is mounted on the carrier 160 and contacted via the extended contact element 269, so that the relevant component can be electrically controlled via the extended contact element 269 through the semiconductor chip 110 and charged with a corresponding potential. As shown in FIG. Fig. 27 and Fig.28 The dashed line indicates that Fig.29 As shown in FIG. 1 , the component contacted via the extended contact element 269 may be another pixelated light-emitting semiconductor chip 122 , such as the one according to FIG. Fig.26 As explained above. In this case, the individual elongated contact elements 222 of the semiconductor chip 122 are electrically connected to the extended contact elements 269 of the carrier 160 via a connecting agent. The connected contact elements 220 of the semiconductor chip 122, not shown, can be electrically connected in a corresponding manner to one or more extended contact elements 269 of the carrier 160. In this configuration, light emission can be caused via the semiconductor chip 122 in a region transverse to the electronic semiconductor chip 110. Instead of the semiconductor chip 122, another light-emitting semiconductor chip can also be used.

[0130] exist Figure 27 to Figure 29 In the optoelectronic module 100 shown in FIG. 1 , there are two contact planes offset from one another for contacting the optoelectronic component structure 101. One contact plane is formed by contact elements 210, 211, 213 of the front side of the electronic semiconductor chip 110 and contact elements 260 of the carrier 160, and the other contact plane is formed by extended contact elements 269 of the carrier 160. In a corresponding manner, the optoelectronic component structure 101 includes components arranged in offset planes, namely semiconductor chips 120, 130, 131 in one plane and semiconductor chip 122 in the other plane.

[0131] For according to Figure 27 to Figure 29 The optoelectronic module 100 described above can also be considered to correspond to the carrier 160 Figure 7In this case, the contact elements 267, 268, 269 of the carrier 160 can be arranged on the base part 162, and the contact elements 260 of the carrier 160 for contacting the semiconductor chips 130, 131 can be arranged on the further carrier part 163. Furthermore, the electronic semiconductor chip 110 can be mounted on the base part 162 together with the components or semiconductor chips 122 contacted via the extended contact elements 269 (not shown in each case).

[0132] According to the optoelectronic module 100 Figure 5 With the design shown in the following figure, a potential is provided which is applied to the optoelectronic component structure 101, so that the component structure 101 is supplied with power via the electronic semiconductor chip 110. If one or more components of the component structure 101 are provided with high-current operation, for example, high-current operation with a current intensity of several amperes, this can be achieved via the high-current design of the semiconductor chip 110. Alternatively, the high-current supply of one or more components can be carried out not via the electronic semiconductor chip 110, but instead via the carrier 160. As a result, the high-current design of the semiconductor chip 110 can be omitted, and the semiconductor chip 110 can be realized cost-effectively.

[0133] For illustration purposes, Fig.30 1 shows a side view of an optoelectronic module 100 designed in the above sense. The module 100 has a structure similar to Figure 6 The optoelectronic device structure 101 according to the design scheme drawn here has, in addition to the pixelated light-emitting semiconductor chip 120, a plurality of or two light-emitting semiconductor chips 130 mounted on a carrier 160. The semiconductor chip 130 can be a high-performance LED, that is, a relatively efficient and light-intensive light-emitting diode chip. For each of the light-emitting semiconductor chips 130, the carrier 160 has two contact elements 260, 261, which are electrically connected to the contact elements 230, 231 on the back side of the semiconductor chip 130 via a connecting agent. The contact elements 260, 261 are the contact elements of the carrier 160 on the back side. Fig.301 , a part of a current supply device 167 schematically shown in FIG. 1 , which, in addition to contact elements 260, 261, also has a current supply line 166 and a switch 165. In the present case, the switch 165 is arranged in a line path associated with the contact element 261. The switch 165 can be implemented in the form of a transistor, for example a MOSFET (metal-oxide-semiconductorfield-effect transistor). Via the current supply device 167, the semiconductor chip 130 or its contact elements 230, 231 can be connected to an external power source 175 independently of each other for high-current operation. For this purpose, the carrier 160 or its current supply device 167 can be connected to the power source 175 in a suitable manner.

[0134] exist Fig.30 In the optoelectronic module 100 of FIG. 1 , the operation of the light-emitting semiconductor chip 130 is also controlled by the electronic semiconductor chip 110. For this purpose, the electronic semiconductor chip 110 is electrically connected to the switch 165 via the control line 170. In this way, by correspondingly actuating the switch 165 by means of the electronic semiconductor chip 110, the power supply of the light-emitting semiconductor chip 130 and thus the activation and deactivation of the light emission of the semiconductor chip 130 can be caused.

[0135] The control line 170 may be a conductor structure of the carrier 160, which is electrically connected to the electronic semiconductor chip 110 in a suitable manner. Fig.11 The conductor track 270 shown in FIG. 1 is similarly connected to the contact element 215 of the electronic semiconductor chip 110 via the connecting structure 181. The current supply line 166 of the current supply device 167 can also be realized by a conductor structure of the carrier 160. Fig.30 The optoelectronic module 100 presents a carrier 160 corresponding to Figure 7 In the case of a multi-part embodiment, components such as the power supply device 167 and the control line 170 can be formed, for example, in a further carrier part 163 .

[0136] The optoelectronic component structure 101 of the optoelectronic module 100 can be designed such that light emission can take place in a region laterally surrounding the electronic semiconductor chip 110. This is the case, for example, in the optoelectronic module 100. Fig.31This is the case in another embodiment shown in a top view in FIG. Here, the device structure 101 has a pixelated light-emitting semiconductor chip 120 arranged on an electronic semiconductor chip 110 and a plurality of light-emitting semiconductor chips 130 located next to and surrounding the semiconductor chip 120. The pixelated light-emitting semiconductor chip 120 can correspond to the electronic semiconductor chip 110 in terms of lateral dimensions, so that the electronic semiconductor chip 110 can be covered by the semiconductor chip 120, as in FIG. Fig.31 The semiconductor chip 130 may be configured to correspond to Figure 6 is mounted on the carrier 160 in a manner.

[0137] Other design solutions are conceivable for the optoelectronic module 100. For example, the optoelectronic module 100 can be implemented in such a way that the optoelectronic device structure 101 has a plurality of light-emitting devices or semiconductor chips arranged on the electronic semiconductor chip 110 in addition to or instead of the pixelated light-emitting semiconductor chip 120. The devices can have relatively small lateral dimensions and can be, for example, semiconductor chips 130 with back-side contact elements 230, 231. In this case, the electronic semiconductor chip 110 has a contact structure coordinated therewith, which has contact elements for mounting the devices or semiconductor chips 130. According to Figure 5 In this case, the semiconductor chip 110 may include contact elements 212 , 213 .

[0138] Furthermore, embodiments of the optoelectronic module 110 are conceivable in which the optoelectronic component structure 101 is additionally expanded by sensor technology and is designed to enable radiation detection. This can be used, for example, for the purpose of detecting ambient light in order to perform light emission of the component structure 101 controlled by the electronic semiconductor chip 110 in a manner coordinated with the respective ambient light present. Furthermore, it is possible to perform optical communication based on light emission and radiation detection. In this case, it is possible to switch between a transmission mode and a reception mode in which light emission and radiation detection take place.

[0139] To illustrate the above features, Fig.32 and Fig.33 An optoelectronic module 100 realized in the above sense is shown in a plan view and in a lateral sectional view. Fig.32 Schematically, three regions 310, 311, 312 of the module 100 are shown, wherein the regions 310, 311 are provided for light emission and the region 312 is provided for radiation detection. In the region 310, an electronic semiconductor chip 110 for controlling the operation of the optoelectronic component structure 101 is also arranged on the carrier 160. In the region 310, a plurality of light emitting devices, for example Fig.33The semiconductor chip 130 shown in FIG. 1 is also mounted on the semiconductor chip 110 and, if applicable, also on the carrier 160. In the region 311 in which light emission can take place transversely to the electronic semiconductor chip 110, a plurality of light-emitting devices, for example Fig.33 The semiconductor chip 130 shown in FIG. 1 can also be mounted only on the carrier 160. In this case, there can be a corresponding Figure 6 In the regions 310 and 311 , the semiconductor chips 130 may be arranged side by side in a matrix in the form of rows and columns (not shown).

[0140] The optoelectronic component structure 101 further comprises, in the region 312 provided for radiation detection, at least one radiation-detecting optoelectronic component 139, which is arranged on the carrier 160. The radiation-detecting component 139 may be a semiconductor chip having a photodiode structure. The radiation-detecting component 139 may also have rear-side contact elements 230, 231 and correspond to Figure 6 Mounted on carrier 160. With regard to regions 311, 312, as in Fig.33 As indicated in , electrical connections are established between components 130 , 139 and electronic semiconductor chip 110 , so that semiconductor chip 110 can control the operation of components 130 , 139 and measurement signals generated by radiation-detecting component 139 can be transmitted to semiconductor chip 110 .

[0141] Alternatively, there is the possibility of using the carrier 160 itself for radiation detection by implementing the carrier 160 with one or more integrated photodiodes. Fig.34 Shown with respect to Fig.33 1 . A side view of an optoelectronic module 100 in a modified design. In this case, the carrier 160 has at least one integrated photodiode 169 in the radiation-detecting region 312. The photodiode 169 is electrically connected to the electronic semiconductor chip 110 in a suitable manner so that a measurement signal of the photodiode 169 can be transmitted to the semiconductor chip 110. The electrical connection can be made via conductor structures of the carrier 160 and according to Fig.11 Established via connection structure 181.

[0142] Figure 32 to Figure 34 A possible modification of the design of can be that the region 310 is provided with a light-emitting semiconductor chip having a vertical structure, so that, for example, Fig.14 and Fig.15 The region 310 is formed in such a manner.

[0143] The design of the optoelectronic module 100 explained with reference to the previous figures can be modified as follows: Radiation detection is also possible. Fig.10 , Fig.12 , Fig.13 , Fig.14 , Fig.19 , Fig.21 , Fig. 27 and Fig.31 It is conceivable that one of the semiconductor chips 130 , 131 , 132 or one of the semiconductor chips 140 , 141 , 142 is implemented as a radiation-detecting semiconductor chip or that the carrier 160 has at least one integrated photodiode 169 .

[0144] In addition to the embodiments described above and depicted in the accompanying drawings, other embodiments are conceivable that may include other modifications and / or feature combinations.

[0145] It is possible to realize the carrier 160 by means of materials other than the above-mentioned materials. In this sense, the carrier 160 can also be realized at least partially in the form of a printed circuit board (PCB) or a flexible circuit board, for example.

[0146] Further variants (not shown) may be that the optoelectronic module 100 has an optoelectronic component structure 101 having a different number and / or geometric arrangement of optoelectronic components or semiconductor chips. This includes designs with only one light-emitting optoelectronic component structure 101. Fig.21 For example, it is conceivable that the component structure 101 has only pixelated light-emitting semiconductor chips 121 which protrude beyond the electronic semiconductor chip 101. Fig. 27 , for example, a plurality of components may be provided which are arranged next to the electronic semiconductor chip 110 and contacted via the extended contact element 269 . Fig.30 The current supply device 167 of the carrier 160 may be designed to supply power to a different number of components or semiconductor chips 130 , including only one component.

[0147] When one or more light-emitting semiconductor chips 140, 141, 142 are used and implemented in a vertical structure, as in Figures 14 to 16 As explained, a modification not shown may be that, for example, one or more semiconductor chips 140, 141, 142 are arranged only on the electronic semiconductor chip 110 or only on the carrier 160. In this case, the contact elements on the back side of the semiconductor chips 140, 141, 142 can also be contacted by contact elements of the carrier 160, and the contact elements on the front side of the semiconductor chips 140, 141, 142 can be electrically connected to the contact elements of the electronic semiconductor chip 110 or also the carrier 160 via a contact layer or a bonding wire.

[0148] In terms of the light-emitting optoelectronic components or semiconductor chips used, in addition to the structural forms shown and described in the drawings, other structural forms can also be used. For example, the optoelectronic component structure 101 can not only have at least one light-emitting diode chip, but also alternatively or additionally have a laser diode chip or a surface emitter (VCSEL, vertical-cavity surface-emitting laser, vertical cavity surface emitting laser). For example, refer to Fig.19 Or there are Fig.30 , one or more semiconductor chips 130 may be such a surface emitter.

[0149] Furthermore, not only semiconductor chips in the form of thin-film chips, such as those in Figure 1 and Figure 2 Arrangements not shown are also possible in which the semiconductor chip, in addition to the semiconductor layer sequence 150 , also comprises a chip substrate, for example a chip substrate composed of sapphire.

[0150] Furthermore, it is conceivable that the optoelectronic device structure 101 has one or more packaged optoelectronic devices in addition to or instead of one or more semiconductor chips. Such a device may include one or more semiconductor chips that emit light and are provided with a housing. The device may also have a back-side contact element, for example. In this regard, for example, the device 130 may be such a packaged device and may be provided in a manner corresponding to Figure 5 , Figure 6 , Figure 8 and Fig. 9 The electronic semiconductor chip 110 and / or the carrier 160 are mounted in a manner.

[0151] The optoelectronic module 100 may also have other components that are not shown, such as one or more optical devices or optical components, such as lenses, which may be fastened to the carrier 160 in a suitable manner.

[0152] In addition to the application in the headlamp, the optoelectronic module 100 can be used or configured for other applications. For example, it can include a projector, an optical communication module or a display device, such as a microdisplay. With regard to the latter, the optoelectronic device structure 101 can be configured to generate light radiation of different colors. For this purpose, the device structure 101 can, for example, have a plurality of light-emitting devices, such as semiconductor chips 130, arranged side by side, wherein in the light-emitting devices, each part is configured to generate red radiation, green radiation and yellow radiation. In addition, according to the above-mentioned manner, a part of the light-emitting device can be arranged at least on the electronic semiconductor chip 110, and another part of the light-emitting device can be arranged at least on a carrier 160 transverse to the semiconductor chip 110 (not shown).

[0153] An exemplary, not shown, manufacturing method, by means of which a plurality of optoelectronic modules 100 can be manufactured, and in which different assembly methods can be used, can be performed as follows. An ASIC wafer is provided, from which a plurality of electronic semiconductor chips 110 are subsequently produced. The ASIC wafer is assembled with light-emitting semiconductor chips or LED chips, for example pixelated light-emitting semiconductor chips 120 and, if necessary, other semiconductor chips, and is divided so that a chip component comprising an electronic semiconductor chip 110 and one or more light-emitting semiconductor chips arranged thereon is provided. The chip component is arranged on a substrate wafer, from which a carrier 160 is subsequently produced. This can be done by a chip-to-wafer method. The substrate wafer can have a recess 161, in which the chip component or its electronic semiconductor chip 110 is arranged. The substrate wafer is then assembled with additional light-emitting semiconductor chips. In this case, for example, a plurality of semiconductor chips can be arranged together on the substrate wafer by means of a stamping technique. Depending on the structural form of the semiconductor chip, further steps can be performed, for example, when using semiconductor chips 140, 141, 142, a flat contact layer 187 is formed. Optionally, other elements, such as optical elements, can be arranged on the substrate wafer. The substrate wafer is subsequently singulated, thereby providing individual optoelectronic modules 100. Such a module 100 can then be inserted, for example, into a housing of a headlight or a projection or headlight module.

[0154] Although the details of the present invention have been illustrated and described in detail through the preferred embodiments, the present invention is not limited to the disclosed examples and other variations can be derived therefrom by those skilled in the art without departing from the scope of protection of the present invention.

[0155] Reference numerals list

[0156] 100 optoelectronic modules

[0157] 101 Optoelectronic Device Structure

[0158] 110 Electronic semiconductor chips

[0159] 111 IC Logic Circuit

[0160] 115 Switch

[0161] 120 semiconductor chips

[0162] 121 Semiconductor Chip

[0163] 122 Semiconductor Chip

[0164] 125 Luminous Area

[0165] 130 Semiconductor Chip

[0166] 131 Semiconductor Chip

[0167] 132 Semiconductor Chip

[0168] 139 Semiconductor Chip

[0169] 140 Semiconductor Chip

[0170] 141 Semiconductor Chip

[0171] 142 Semiconductor Chip

[0172] 150 Semiconductor layer sequence

[0173] 151 Semiconductor Area

[0174] 152 Active Area

[0175] 153 Semiconductor area

[0176] 155 pixels

[0177] 157 Vias

[0178] 159 Conversion Layer

[0179] 160 Carrier

[0180] 161 recess

[0181] 162 Base parts

[0182] 163 Load-bearing components

[0183] 165 Switch

[0184] 166 Current transmission lines

[0185] 167 Current transmission device

[0186] 169 Photodiode

[0187] 170 Control Line

[0188] 175 Power Supply

[0189] 180 Connecting agent

[0190] 181 Connection structure

[0191] 185 Bonding Wire

[0192] 187 Contact layer

[0193] 190 Thermal connection structure

[0194] 191 Insulation layer

[0195] 192 Connecting elements

[0196] 201 Contact element

[0197] 202 Contact element

[0198] 210 Contact element

[0199] 211 Contact element

[0200] 212 Contact element

[0201] 213 Contact element

[0202] 215 Contact element

[0203] 217 Contact element

[0204] 218 Contact element

[0205] 220 Contact element

[0206] 221 Contact element

[0207] 222 Contact element

[0208] 230 Contact element

[0209] 231 Contact element

[0210] 260 Contact elements

[0211] 261 Contact element

[0212] 265 Contact elements

[0213] 267 Contact element

[0214] 268 Contact elements

[0215] 269 ​​Extended contact element

[0216] 270 Printed conductor

[0217] 271 Printed conductor

[0218] 300 Area

[0219] 301 Zone

[0220] 310 Area

[0221] 311 Area

[0222] 312 Area

[0223] 320 Overlapping Area

[0224] 330 Level Difference

[0225] 350 Light Radiation

[0226] 351 Primary Radiation

Claims

1. An optoelectronic module (100), comprising: an optoelectronic component structure (101) for light emission, the optoelectronic component structure having at least one optoelectronic component; an electronic semiconductor chip (110) for controlling the operation of the optoelectronic component structure (101); and a carrier (160), wherein the electronic semiconductor chip (110) is arranged on the carrier (160), The optoelectronic device structure (101) is at least arranged on the electronic semiconductor chip (110), The optoelectronic component structure (101) is designed to cause light emission in a region covering the electronic semiconductor chip (110) and in a region transverse to the electronic semiconductor chip (110) and not covering the electronic semiconductor chip (110).

2. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (121, 122, 130, 131, 132, 140, 141, 142), which is arranged on the electronic semiconductor chip (110) and the carrier (110) and covers the electronic semiconductor chip (110) in one region and covers the carrier (160 laterally to the electronic semiconductor chip (110).

3. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises optoelectronic components (121, 122, 132, 140, 141, 142) which protrude laterally beyond the electronic semiconductor chip (110), thereby covering the carrier (160) in a region transverse to the electronic semiconductor chip (110) and being thermally conductively connected to the carrier (160) in said region.

4. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (120, 121, 122, 130, 131, 132, 140, 141, 142) which is arranged at least on the electronic semiconductor chip (110) and at least covers the electronic semiconductor chip (110) in a region, and the optoelectronic component structure (101) comprises at least one further optoelectronic component (121, 122, 130, 131, 132, 140, 141, 142) which is arranged at least on the carrier (160) and at least covers the carrier (160) in a region transverse to the electronic semiconductor chip (110).

5. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (120, 121, 122, 130, 132) which has contact elements (220, 221, 222, 230, 231) on the rear side, which are electrically connected to opposite contact elements (210, 211, 212, 213) of the electronic semiconductor chip (110).

6. The optoelectronic module according to claim 1, The optoelectronic device structure (101) comprises an optoelectronic device in the form of a pixelated light-emitting semiconductor chip (120, 121, 122), wherein the pixelated light-emitting semiconductor chip (120, 121, 122) is arranged on the electronic semiconductor chip (110), and wherein the pixelated light-emitting semiconductor chip (120, 121, 122) has a contact element (220, 221, 222) on the back side, wherein the contact element is electrically connected to an opposite contact element (210, 211) of the electronic semiconductor chip (110).

7. The optoelectronic module according to claim 6, The pixelated light-emitting semiconductor chip (121, 122) protrudes laterally beyond the electronic semiconductor chip (110) and has a contact element (220, 222) on its back side that protrudes laterally beyond the electronic semiconductor chip (110) and is electrically connected to an opposite contact element (210, 211) of the electronic semiconductor chip (110).

8. The optoelectronic module according to claim 1, The optoelectronic device structure (101) comprises an optoelectronic device (130, 131), wherein the optoelectronic device has a contact element (230, 231) on the back side, wherein a contact element (231) on the back side of the optoelectronic device (130, 131) is electrically connected to an opposite contact element (213) of the electronic semiconductor chip (110), and a contact element (230) on the other back side of the optoelectronic device (130, 131) is electrically connected to an opposite contact element (260) of the carrier (160).

9. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (130) which has a contact element (230, 231) on the rear side, which is electrically connected to an opposing contact element (260, 261) of the carrier (160).

10. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (140, 141, 142), the optoelectronic component having a contact element (231) on the front side and a contact element (230) on the back side, wherein the contact element (230) on the back side of the optoelectronic component (140, 141, 142) is electrically connected to an opposite contact element (213) of the electronic semiconductor chip (110), and the contact element (231) on the front side of the optoelectronic component (140, 141, 142) is electrically connected to a contact element (260) of the carrier (160).

11. The optoelectronic module according to claim 10, A front-side contact element (231) of the optoelectronic component (140, 141, 142) and a contact element (260) of the carrier (160) are electrically connected via a contact layer (187).

12. The optoelectronic module according to claim 1, The electronic semiconductor chip (110) has contact elements (210, 211, 212, 213, 215, 217, 218) on the front side and the back side.

13. The optoelectronic module according to claim 1, The carrier (160) comprises an extended contact element (269) which is electrically connected to a contact element (218) of the electronic semiconductor chip (110) at the back side of the electronic semiconductor chip (110) and projects laterally beyond the electronic semiconductor chip (110) at the back side of the electronic semiconductor chip (110), and the optoelectronic component structure (110) comprises an optoelectronic component (122) which is arranged laterally next to the electronic semiconductor chip (160) and has a contact element (222) which is electrically connected to the extended contact element (269).

14. The optoelectronic module according to claim 1, The carrier (160) comprises a current supply device (167) for supplying current to the optoelectronic components (130) of the optoelectronic component structure (101), and the current supply device (167) comprises a switching element (165) which is electrically connected to the electronic semiconductor chip (110) and can be controlled by the electronic semiconductor chip (110), and is used to activate the current supply.

15. The optoelectronic module according to claim 1, The carrier (160) has a recess (161) in which the electronic semiconductor chip (110) is arranged.

16. The optoelectronic module according to claim 1, The carrier (160) comprises a base part (162) and a further carrier part (163), wherein the electronic semiconductor chip (110) is arranged on the base part (162), and wherein the further carrier part (163) is arranged laterally next to the electronic semiconductor chip (110) on the base part (162).

17. The optoelectronic module according to claim 1, The carrier (160) comprises at least one of the following carrier materials: silicon, ceramic.

18. The optoelectronic module according to claim 1, The optoelectronic component structure (101) comprises an optoelectronic component (139) for detecting radiation.

19. The optoelectronic module according to claim 1, The carrier (160) has an integrated photodiode (169).

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