Ultrahigh-density degenerate integrated radio frequency array architecture

Abstract

The invention belongs to the field of microwave radio frequency, and relates to an ultra-high-density degenerate integrated radio frequency array architecture, which comprises a three-dimensional silicon-based packaging structure, a high-power functional circuit, a low-power multifunctional circuit and a functional interconnection adapter plate, through fusion design of a radio frequency architecture function layer, a circuit and a chip in a traditional module are separated from the module, redundant design and interconnection non-connector assembly are eliminated, more functions are integrated in a smaller space, an embedded micro-channel and a bidirectional heat dissipation mode are innovatively used, and under the condition that ultra-high density degeneracy integration of the radio frequency architecture is improved, the reliability of the radio frequency architecture is improved. And good heat dissipation of the radio frequency architecture is considered. Configuration integration is carried out according to the requirements of system levels, a plurality of pre-packaged functional circuits are degenerate and integrated, traditional module-level stacking is changed into functional circuit distributed stacking, function fusion and universalization of a radio frequency architecture are achieved to the maximum extent, and the radio frequency architecture can be transplanted and universally used in different combat platforms such as detection and communication.

Description

Technical Field

[0001] The present application belongs to the field of microwave radio frequency, and in particular to an ultra-high density degenerate integrated radio frequency array architecture. Background Art

[0002] At present, traditional radar RF architectures are based on module-level architectures. Each module has independent functions and is interconnected through connectors. The structure is complex, the volume is large, and it is not reconfigurable. High-power radars and low-power RF functions such as communications and electronic warfare cannot achieve universal RF architectures. Therefore, reconfigurable, high-density integrated RF architectures are the current research hotspots for radar RF array architectures. Therefore, how to achieve reconfigurable, high-density integrated RF architectures is a problem that needs to be solved. Summary of the invention

[0003] The purpose of this application is to provide an ultra-high density degenerate integrated radio frequency array architecture to solve the problems of complex structure, large volume and non-reconfigurability existing in the prior art.

[0004] The technical solution of the present application is: an ultra-high density degenerate integrated radio frequency array architecture, including a three-dimensional silicon-based packaging structure, a high-power functional circuit, a low-power multi-function circuit and a functional interconnection adapter board; the high-power functional circuit and the low-power multi-function circuit are both designed as core particles and fixed on the functional interconnection adapter board, and the high-power functional circuit and the low-power multi-function circuit are respectively arranged on both sides of the functional interconnection adapter board, and the three-dimensional silicon-based packaging structure is sealed and surrounded by the high-power functional circuit, the low-power multi-function circuit and the outer side of the functional interconnection adapter board; an embedded microchannel is provided in the three-dimensional silicon-based packaging structure, and a coolant can flow into the embedded microchannel, and the coolant can directly or indirectly cool each core particle; a bidirectional cooling structure is provided on both sides of the high-power functional circuit.

[0005] Preferably, the bidirectional cooling structure includes a first heat conducting plate and an embedded silicon platform; one side of the first heat conducting plate is in direct contact with the embedded microchannel, and the other side is in contact with the high-power functional circuit; the interior of the embedded silicon platform is connected to the embedded microchannel, and a first BGA ball is provided on the end, and the first BGA ball is welded to the pad of the high-power functional circuit; the first heat conducting plate and the embedded silicon platform are distributed on both sides of the high-power functional circuit, and the embedded silicon platform has multiple groups and respectively cooperates with each core particle in the high-power functional circuit.

[0006] Preferably, a second heat conducting plate is provided between the low-power multifunctional circuit and the three-dimensional silicon-based packaging structure; the low-power multifunctional circuit comprises a frequency conversion chip, an AD / DA chip, an optoelectronic chip and a power supply chip; a second BGA ball is provided on each of the frequency conversion chip, the AD / DA chip, the optoelectronic chip and the power supply chip, and the second BGA ball is welded to a pad of the functional interconnection adapter board; the frequency conversion chip, the AD / DA chip, the optoelectronic chip and the power supply chip are separated from each other.

[0007] Preferably, the first heat conducting plate and the second heat conducting plate are both made of soft heat conducting material.

[0008] Preferably, the high-power functional circuit is composed of multiple groups of four-channel TR core particles, each group of four-channel TR core particles is provided with a third BGA ball, and the third BGA ball is welded to the pad of the functional interconnection adapter board; different four-channel TR core particles do not contact each other.

[0009] Preferably, a radio frequency interface, an optical fiber interface and a power interface are respectively provided on one side of the three-dimensional silicon-based packaging structure; a connector is provided inside the three-dimensional silicon-based packaging structure, the radio frequency interface and the electrolytic interface are connected to the low-power multi-functional circuit through the connector, and the optical fiber interface is directly connected to the low-power multi-functional circuit; a wool button is provided on the three-dimensional silicon-based packaging structure; the multiple core particles in the high-power functional circuit are all connected to the wool button, and the signal is output through the wool button.

[0010] Preferably, the functional interconnection adapter board includes a signal transfer layer and a heat dissipation layer; the signal transfer layer has multiple groups and is distributed on both sides of the heat dissipation layer, and a heat dissipation channel connected to the embedded microchannel is provided in the heat dissipation layer; the signal transfer layer is provided with a vertical metal heat dissipation column connected to the heat dissipation channel.

[0011] Preferably, the embedded microfluidic channel includes a mainstream and a tributary; a liquid cooling inlet and a liquid cooling outlet are respectively provided on one side of the three-dimensional silicon-based packaging structure, the coolant continuously flows from the liquid cooling inlet to the liquid cooling outlet along the mainstream, and the tributary is connected with the mainstream and flows to each core particle respectively.

[0012] The ultra-high-density degenerate integrated RF array architecture of this application separates the circuits and chips in the traditional modules from the modules through the fusion design of the RF architecture functional layer, eliminates redundant design and interconnection without connectors, integrates more functions in a smaller space, and innovatively uses embedded microfluidics and two-way heat dissipation methods to improve the ultra-high-density degenerate integration of the RF architecture while taking into account the good heat dissipation of the RF architecture. According to the requirements of the system level, the configuration and integration are carried out, and several pre-packaged functional circuits are simplified and integrated, and the traditional module-level stacking is transformed into a distributed stacking of functional circuits, so as to achieve the maximum functional integration and universalization of the RF architecture, which can be portable and universal in different combat platforms such as detection and communication. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solution provided by the present application, the following is a brief introduction to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present application.

[0014] Figure 1 This is a schematic diagram of the overall structure of this application;

[0015] Figure 2 This is a distribution diagram of the embedded microchannels in the three-dimensional silicon-based packaging structure of this application.

[0016] 1. Three-dimensional silicon-based packaging structure; 2. Functional interconnection adapter board; 3. Four-channel TR core; 4. First heat conduction plate; 5. First BGA ball; 6. Frequency conversion core; 7. AD / DA core; 8. Optoelectronic core; 9. Power core; 10. Second heat conduction plate; 11. Second BGA ball; 12. RF interface; 13. Fiber optic interface; 14. Power interface; 15. Fur button; 16. Embedded microfluidic channel; 17. Embedded silicon platform; 18. Third BGA ball. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] An ultra-high density degenerate integrated RF array architecture, such as Figure 1-Figure 2 As shown, it includes a three-dimensional silicon-based packaging structure 1, a high-power functional circuit, a low-power multi-functional circuit and a functional interconnection adapter board 2; the high-power functional circuit and the low-power multi-functional circuit are both designed as core particles and fixed on the functional interconnection adapter board 2, and the high-power functional circuit and the low-power multi-functional circuit are respectively arranged on both sides of the functional interconnection adapter board 2, and the three-dimensional silicon-based packaging structure 1 is sealed and surrounded by the high-power functional circuit, the low-power multi-functional circuit and the outer side of the functional interconnection adapter board 2; an embedded microchannel 16 is provided in the three-dimensional silicon-based packaging structure 1, and a coolant can flow into the embedded microchannel 16, and the coolant can directly or indirectly cool each core particle; a bidirectional cooling structure is provided on both sides of the high-power functional circuit.

[0019] By performing functional splitting and circuit reorganization, the traditional multi-channel T / R internal components and external wave control, power supply, power division network, etc. are simplified and designed, and the functional density is increased by 4 times; by simplifying and packaging traditional up and down frequency conversion components, delay network components, intermediate frequency signal processing boards, etc., the volume of related functional circuit devices is reduced exponentially, and based on the micro-nano three-dimensional silicon-based packaging process, the core circuits in the RF array architecture are integrated into a multifunctional RF array device. The simplified design is high-density, and the efficient microfluidic heat dissipation system improves the heat dissipation efficiency and integration density. The thickness of the RF array architecture is reduced by 4 times, thereby achieving miniaturization.

[0020] Traditional TR components, up / down frequency conversion components, delay network components, intermediate frequency signal processing boards and other modules are metal-packaged and heavy, but the core particles can be chip-based, light, and the high-density, efficient microchannel heat dissipation system with a simplified design is integrated with the silicon-level package, without the need for a special heat dissipation structure, which greatly reduces the weight.

[0021] Preferably, the bidirectional cooling structure includes a first heat conducting plate 4 and an embedded silicon platform 17; one side of the first heat conducting plate 4 is in direct contact with the embedded microchannel 16, and the other side is bonded to the high-power functional circuit; the embedded silicon platform 17 is connected to the embedded microchannel 16, and a first BGA ball 5 is provided on the end, and the first BGA ball 5 is welded to the pad of the high-power functional circuit; the first heat conducting plate 4 and the embedded silicon platform 17 are distributed on both sides of the high-power functional circuit, and the embedded silicon platform 17 has multiple groups and cooperates with each core particle in the high-power functional circuit respectively. BGA balls can transmit signals and conduct heat; signal transmission through BGA balls can realize flexible configuration of communication and heat dissipation, and greatly reduce the connector connection mode.

[0022] Preferably, a second heat conducting plate 10 is provided between the low-power multifunctional circuit and the three-dimensional silicon-based packaging structure 1; the low-power multifunctional circuit includes a frequency conversion chip 6, an AD / DA chip 7, an optoelectronic chip 8, and a power chip 9; the frequency conversion chip 6, the AD / DA chip 7, the optoelectronic chip 8, and the power chip 9 are all provided with a second BGA ball 11, which is welded to the pad of the functional interconnection adapter 2; the frequency conversion chip 6, the AD / DA chip 7, the optoelectronic chip 8, and the power chip 9 are separated from each other. By designing the chips in multiple low-power multifunctional circuits to be centralized but not in contact, it is ensured that they do not affect each other and there will be no heat dissipation problems, thus achieving efficient and stable integration.

[0023] Preferably, the first heat conducting plate 4 and the second heat conducting plate 10 are both made of soft heat conducting material to ensure good contact.

[0024] Preferably, the high-power functional circuit is composed of multiple groups of four-channel TR core particles 3, each group of four-channel TR core particles 3 is provided with a third BGA ball 18, and the third BGA ball 18 is welded to the pad of the functional interconnection adapter board 2; different four-channel TR core particles 3 do not contact each other to ensure communication while further simplifying the structure.

[0025] Preferably, a radio frequency interface 12, a fiber optic interface 13 and a power interface 14 are respectively provided on one side of the three-dimensional silicon-based packaging structure 1; a connector is provided inside the three-dimensional silicon-based packaging structure 1, and the radio frequency interface 12 and the electrolytic interface are connected to the low-power multi-functional circuit through the connector, and the fiber optic interface 13 is directly connected to the low-power multi-functional circuit; a wool button 15 is provided on the three-dimensional silicon-based packaging structure 1; multiple core particles in the high-power functional circuit are all connected to the wool button 15, and signals are output through the wool button 15. The wool button 15 is a miniaturized connector with high-density and high-reliability connection, which has the characteristics of small size, light weight, low cost, and flexible configuration.

[0026] It also implements a distributed design, and the packaged and integrated multifunctional RF array devices have independent functions and can be rearranged as needed, making the functions reconfigurable and adaptable to the needs of different combat platforms.

[0027] Preferably, the functional interconnection adapter board 2 includes a signal transfer layer and a heat dissipation layer; the signal transfer layer has multiple groups and is distributed on both sides of the heat dissipation layer, and a heat dissipation channel connected to the embedded microchannel 16 is provided in the heat dissipation layer; a vertical metal heat dissipation column connected to the heat dissipation channel is provided on the signal transfer layer. Auxiliary heat dissipation is achieved by providing a heat dissipation channel in the functional interconnection adapter board 2.

[0028] Preferably, the embedded microfluidic channel 16 includes a mainstream and a tributary; a liquid cooling inlet and a liquid cooling outlet are respectively provided on one side of the three-dimensional silicon-based packaging structure 1, and the coolant continuously flows from the liquid cooling inlet to the liquid cooling outlet along the mainstream, and the tributary is connected with the mainstream and flows to each core particle respectively, cooperating with the heat dissipation channel to realize multi-dimensional, comprehensive and full coverage heat dissipation.

[0029] Finally, it should be noted that: the drawings of the embodiments disclosed in the present invention only involve structures related to the embodiments disclosed in the present invention, and other structures can refer to the general design. In the absence of conflict, the same embodiment and different embodiments of the present invention can be combined with each other;

[0030] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An ultra-high density degenerate integrated radio frequency array architecture, characterized in that: The invention comprises a three-dimensional silicon-based packaging structure (1), a high-power functional circuit, a low-power multifunctional circuit and a functional interconnection adapter board (2); the high-power functional circuit and the low-power multifunctional circuit are both designed as core particles and fixed on the functional interconnection adapter board (2), and the high-power functional circuit and the low-power multifunctional circuit are respectively arranged on both sides of the functional interconnection adapter board (2), and the three-dimensional silicon-based packaging structure (1) is sealed and surrounds the high-power functional circuit, the low-power multifunctional circuit and the outer side of the functional interconnection adapter board (2); an embedded microchannel (16) is arranged in the three-dimensional silicon-based packaging structure (1), and a coolant can flow into the embedded microchannel (16), and the coolant can directly or indirectly cool each core particle; two-way cooling structures are arranged on both sides of the high-power functional circuit.

2. The ultra-high density degenerate integrated radio frequency array architecture according to claim 1, characterized in that: The bidirectional cooling structure comprises a first heat conducting plate (4) and an embedded silicon platform (17); one side of the first heat conducting plate (4) is in direct contact with the embedded microchannel (16), and the other side is in contact with the high-power functional circuit; the interior of the embedded silicon platform (17) is connected to the embedded microchannel (16), and a first BGA ball (5) is provided on the end thereof, and the first BGA ball (5) is welded to the pad of the high-power functional circuit; the first heat conducting plate (4) and the embedded silicon platform (17) are distributed on both sides of the high-power functional circuit, and the embedded silicon platform (17) has a plurality of groups and respectively cooperates with each core particle in the high-power functional circuit.

3. The ultra-high density degenerate integrated radio frequency array architecture according to claim 2, characterized in that: A second heat conducting plate (10) is provided between the low-power multifunctional circuit and the three-dimensional silicon-based packaging structure (1); the low-power multifunctional circuit comprises a frequency conversion chip (6), an AD / DA chip (7), an optoelectronic chip (8) and a power chip (9); the frequency conversion chip (6), the AD / DA chip (7), the optoelectronic chip (8) and the power chip (9) are each provided with a second BGA ball (11), and the second BGA ball (11) is welded to a pad of a functional interconnection adapter board (2); the frequency conversion chip (6), the AD / DA chip (7), the optoelectronic chip (8) and the power chip (9) are separated from each other.

4. The ultra-high density degenerate integrated radio frequency array architecture according to claim 3, characterized in that: The first heat conducting plate (4) and the second heat conducting plate (10) are both made of soft heat conducting material.

5. The ultra-high density degenerate integrated radio frequency array architecture according to claim 1, characterized in that: The high-power functional circuit is composed of a plurality of groups of four-channel TR core particles (3), each group of four-channel TR core particles (3) is provided with a third BGA ball (18), and the third BGA ball (18) is welded to a pad of a functional interconnection adapter plate (2); different four-channel TR core particles (3) do not contact each other.

6. The ultra-high density degenerate integrated radio frequency array architecture according to claim 1, characterized in that: A radio frequency interface (12), a fiber optic interface (13) and a power interface (14) are respectively provided on one side of the three-dimensional silicon-based packaging structure (1); a connector is provided inside the three-dimensional silicon-based packaging structure (1); the radio frequency interface (12) and the electrolytic interface are connected to the low-power multifunctional circuit via the connector, and the fiber optic interface (13) is directly connected to the low-power multifunctional circuit; a wool button (15) is provided on the three-dimensional silicon-based packaging structure (1); a plurality of core particles in the high-power functional circuit are all connected to the wool button (15), and signals are output through the wool button (15).

7. The ultra-high density degenerate integrated radio frequency array architecture according to claim 1, characterized in that: The functional interconnection adapter plate (2) comprises a signal transfer layer and a heat dissipation layer; the signal transfer layer has a plurality of groups distributed on both sides of the heat dissipation layer, a heat dissipation channel connected to the embedded microchannel (16) is provided in the heat dissipation layer; and a vertical metal heat dissipation column connected to the heat dissipation channel is provided on the signal transfer layer.

8. The ultra-high density degenerate integrated radio frequency array architecture according to claim 1, characterized in that: The embedded microfluidic channel (16) includes a mainstream and a tributary flow; a liquid cooling inlet and a liquid cooling outlet are respectively provided on one side of the three-dimensional silicon-based packaging structure (1); the cooling liquid continuously flows from the liquid cooling inlet to the liquid cooling outlet along the mainstream, and the tributary flow is connected with the mainstream and flows to each core particle respectively.

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