Gas injection system and wafer processing apparatus using the same

Abstract

A gas input structure for providing a gas for use in a wafer processing chamber is presented. The structure includes: a flow control ring having a sealing portion and a retaining ring; and an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel including a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing gas from the at least one gas tunnel, the gas to be injected into the gas channel through the plurality of holes, and wherein the gas channel is connected to the wafer processing chamber.

Description

Technical Field

[0001] The present invention relates to a gas injection system and a wafer processing device using the gas injection system, and more particularly to a gas injection system that can mix and inject one or more gases into a reaction chamber in the wafer processing device. The present invention can be used in wafer processing devices equipped with or without a remote plasma unit (RPU). Background Art

[0002] Some wafer processing equipment that may be equipped with a showerhead may be supplied with more than one gas (e.g., reactant gas and precursor) into a reaction chamber for wafer processing, while other wafer processing equipment that may be equipped with an RPU but no showerhead may be supplied with one gas (e.g., source gas) into a reaction chamber for wafer processing.

[0003] In wafer processing, the degree of mixing of reactant gases can be important for wafer uniformity.

[0004] Therefore, the present disclosure provides a gas injection system and a wafer processing apparatus using the same for maximizing gas mixing for wafer processing. Summary of the invention

[0005] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0006] According to one embodiment, a gas input structure for providing gas used in a wafer processing chamber can be provided, the structure comprising: a flow control ring having a sealing portion and a retaining ring; and an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, each gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a gas space is formed and sealed between the flow control ring and the outer body to contain gas from at least one gas tunnel, which gas will be injected through the plurality of holes.

[0007] In at least one aspect, the injection angle of the hole is between 0 degrees and 80 degrees.

[0008] In at least one aspect, the downward angle of the aperture is between 0 and 50 degrees.

[0009] In at least one aspect, the flow control ring has a length between 4 mm and 100 mm.

[0010] In at least one aspect, the flow control ring has a thickness between 1 mm and 10 mm.

[0011] According to another embodiment, a wafer processing device can be provided, comprising: a reaction chamber and a gas input structure, the gas input structure comprising: a flow control ring having a sealing portion and a retaining ring; and an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, each gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a gas space is formed and sealed between the flow control ring and the outer body to contain gas from at least one gas tunnel, which gas will be injected through the plurality of holes.

[0012] In at least one aspect, the injection angle of the hole is between 0 degrees and 80 degrees.

[0013] In at least one aspect, the downward angle of the aperture is between 0 and 50 degrees.

[0014] In at least one aspect, the flow control ring has a length between 4 mm and 100 mm.

[0015] In at least one aspect, the flow control ring has a thickness between 1 mm and 10 mm. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0017] FIG. 1( a ) shows one embodiment of a gas injection system according to the present disclosure in a wafer processing tool equipped with a remote plasma unit (RPU).

[0018] FIG. 1( b ) shows another embodiment of a wafer processing apparatus equipped with a showerhead but without an RPU.

[0019] Figure 2 A perspective view of a gas injection system according to an embodiment of the present disclosure is shown.

[0020] Figure 3(a) shows Figure 2 Top view of the .

[0021] FIG3( b ) shows the flow control loop inside FIG3( a ).

[0022] Figure 4 Shows Figure 2 Side view of.

[0023] FIG. 5( a ) shows a perspective view of a gas injection system according to another embodiment of the present disclosure.

[0024] FIG. 5( b ) shows a top view of the gas injection system of FIG. 5( a ).

[0025] FIG. 6( a ) shows a top view of another gas injection system having three injection points according to another embodiment of the present disclosure.

[0026] FIG6( b ) shows a top view of another gas injection system with four injection points according to another embodiment of the present disclosure.

[0027] FIG. 7( a ) shows a top view of a flow control ring with a zero degree (0°) injection angle according to one embodiment of the present disclosure.

[0028] FIG. 7( b ) shows a top view of a flow control ring having a non-zero injection angle according to another embodiment of the present disclosure.

[0029] Figure 8 A side view of a flow control ring having a non-zero downward angle is shown according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0031] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0032] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0033] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form.

[0034] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted.

[0035] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0036] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0037] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0038] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0039] Figures 1(a) and (b) show two examples of how gas injection systems may be used in various wafer processing equipment.

[0040] 1( a ) shows a wafer processing apparatus 100 having a remote processing unit (RPU) 110 . In the apparatus, source gas may be injected into a reaction chamber 112 via positions 113 , 114 through a gas injection system 111 .

[0041] 1( b ) shows a wafer processing apparatus 120 with a showerhead 123 without any RPU. In this case, reactant gas and precursor gas may be injected into the reaction chamber 122 through the gas injection system 121 at positions 124 and 125, respectively.

[0042] The same gas injection system can be used in two different devices shown in Figures 1(a) and (b).

[0043] Figure 2A gas injection system 200 is shown according to an embodiment of the disclosure.

[0044] The gas injection system 200 may include a flow control ring 210 and an outer body 220. Figure 2 As shown, the flow control ring 210 may be inserted into the outer body 220 .

[0045] The flow control ring 210 may have a circular shape, and may have a sealing portion 211 and a retaining ring 212 disposed below the sealing portion 211. The sealing portion 211 may be shaped to protrude from the retaining ring 212 to seal a space between the flow control ring 210 and the outer body 220. This space is explained as follows.

[0046] The outer body 220 may surround the flow control ring 210 and may include one or more gas tunnels 221, 241. When the flow control ring 210 is inserted into the outer body 220, the outer body 220 may surround the flow control ring 210.

[0047] The sealing portion 211 of the flow control ring 210 may be shaped to protrude from the retaining ring 212 so that the sealing portion 211 may seal a gas space 230 defined by the sealing portion 211 , the retaining ring 212 (flow control ring 210 ), and the interior of the outer body 220 .

[0048] When the flow control ring 210 is inserted into the outer body 220 , the gas space 230 may be sealed from the outside except for the hole 213 .

[0049] The gas tunnel 221 may include a gas inlet 222 , a gas outlet 224 , and a gas flow path 223 connecting the gas inlet 222 and the gas outlet 224 .

[0050] There may be one or more gas tunnels 221 , 241 in the outer body 220 , and another gas tunnel 241 may also include a gas inlet 242 , a gas outlet 244 , and a gas flow path 243 connecting the gas inlet 242 and the gas outlet 244 .

[0051] The gas tunnels 221 , 241 may be sealed by valves (not shown) which will be connected to the corresponding gas inlets 222 , 242 after one or more gases are injected into the gas tunnels 221 , 241 .

[0052] When the flow control ring 210 is inserted into the outer body 220 , the gas space 230 may be defined by the flow control ring 210 and the outer body 220 , and the gas from the gas tunnels 221 , 241 may be contained within the sealed gas space 230 .

[0053] For example, when Figure 2When there are two gas channels 221, 241 as shown, the same gas can be injected into the gas tunnels 221, 241 (as shown in Figure 1 (a) "source gas"), or different gases can be injected into each gas tunnel 221, 241 (as shown in Figure 1 (b) "reactants and precursors").

[0054] Figure 3(a) shows Figure 2 Top view of the .

[0055] The shape of the outer body 320 may be circular or rectangular or any other shape suitable for the wafer handling equipment to which it is attached.

[0056] In FIG3(a), there may be two (2) gas tunnels 321, 341. The two opposing gas tunnels 321, 341 are not located on the same straight line or plane. This feature may enable the gas circulating in the gas space 330 to move faster, because the gas entering the gas space 330 from the two gas tunnels 321, 341 may accelerate the gas already circulating in the gas space 330, because the direction (rotation direction) of the gas already circulating in the gas space 330 and the direction of the gas entering from the two gas tunnels 321, 341 (A, B) are the same.

[0057] In FIG. 3( a ), the direction of the rotating gas in the gas space 330 , “rotation direction”, is clockwise, while in another embodiment, with different positions of the gas tunnels 321 , 341 , the rotation direction will be counterclockwise.

[0058] Each gas tunnel 321, 341 may include a gas inlet 322, 342, a gas outlet 324, 344, and a gas flow path 323, 343. The gas flow paths 323, 343 may respectively connect the gas inlets 322, 342 and the gas outlets 324, 344. The gas inlets 322, 342 may be connected to an external pipe (not shown) connected to a gas supply source.

[0059] The gas from the gas inlet 322, 342 may flow to the gas outlet 324, 344 through the gas flow path 323, 342. The gas may exit the gas tunnel 321, 341 and flow into the gas space 330.

[0060] In the gas space 330, the gas may circulate clockwise or counterclockwise around the gas space 330, depending on the direction in which the gas tunnels 321, 341 enter the gas space 330. In this example, the gas may circulate in a clockwise direction.

[0061] The gas will flow into the gas channel 340, which may be connected to the reaction chamber (112 in FIG. 1(a) and 122 in FIG. 1(b)).

[0062] The gas space 330 may be between the outer body 320 and the flow control ring 310 , and the gas in the gas space 330 may flow into the gas channel 340 through the plurality of holes 313 while circulating around the gas space 330 , and then flow into the reaction chambers 112 , 122 for wafer processing.

[0063] Figure 4 Shows Figure 2 Side view of.

[0064] exist Figure 4 In the embodiment, the flow control ring 410 is inserted into the outer body 400. The sealing portion 411 can completely seal the gas space 430 between the outer body 400 and the flow control ring 410. There are two gas tunnels 420, 440, which can introduce gas into the gas channel 450 and finally into the reaction chamber (not shown).

[0065] The flow control ring 410 may include a sealing portion 411, a retaining ring 412, and a plurality of holes 413 on the retaining ring 412. The gas tunnels 420, 440 may include gas inlets 421, 441, gas outlets 423, 443, and gas flow paths 422, 442.

[0066] The same gas or different gases may be injected into the gas inlets 421, 441. For example, the same source gas may be injected into the gas inlets 421, 441, while in other cases, the reactant gas and the precursor gas are injected into the gas inlets 421, 441, respectively.

[0067] The gas inside the gas space 430 may flow around the flow control ring 410 and, when possible, may enter the gas channel 450 through the hole 413 and eventually enter the reaction chamber (not shown) for wafer processing.

[0068] FIG. 5( a ) shows a perspective view of a gas injection system according to another embodiment of the present disclosure, and FIG. 5( b ) shows a top view of the gas injection system of FIG. 5( a ).

[0069] The flow control ring 510 may include a sealing portion 511 and a retaining ring 512 , of which a plurality of holes 513 may be clearly seen.

[0070] In this example, the outer body 520 is shaped as a circle with a hollow center for inserting the flow control ring 510 .

[0071] The two gas tunnels 524, 544 each include a gas inlet 521, 541, a gas outlet 523, 543, and a gas flow path 522, 542. The gas injected into the gas inlet 521, 541 will rotate around the flow control ring 510 in the gas space 530.

[0072] The gas in the gas space 530 will flow into the gas channel 550 through the plurality of holes 513, and then flow into the reaction chamber (112, 122 in Figs. 1(a) and (b) respectively) for wafer processing.

[0073] Unlike FIG. 3( a ), the two gas tunnels are on the same plane or line, as indicated by line S. In FIG.

[0074] In this embodiment, the direction in which the gas flows in the gas space 530 may be randomly determined. The gas entering the gas space 530 from the gas outlets 523 and 543 may hit the flow control ring 510 and generate a vortex in the gas space 530 .

[0075] FIG. 6( a ) shows another embodiment of a gas injection system having three gas channels, and FIG. 6( b ) shows another embodiment of a gas injection system having four gas channels.

[0076] The angles (angle 1, angle 2, angle 3) formed between the gas tunnels 611, 612, 613 shown in Figure 6(a) will be 120 degrees for maximizing gas mixing in the gas space 620, but this can be changed to meet the needs.

[0077] In addition, in the case of four gas tunnels, the angles (angle A, angle B, angle C, angle D) formed between the gas tunnels 631, 632, 633, and 634 shown in Figure 6(b) will be 90 degrees to maximize the gas mixing in the gas space 640, but this can also be changed to meet the operating environment.

[0078] The directions of the gas tunnels 611, 612, 613 in FIG6(a) and the gas tunnels 631, 632, 633, 634 in FIG6(b) are respectively the center points C1 and C2 of the gas channels 625 and 645. However, for example, the directions of the gas tunnel 614 in FIG6(a) and the gas tunnel 635 in FIG6(b) may not be the center points C1 and C2 (D1 and D2, respectively).

[0079] The direction of the gas tunnel can be arbitrarily determined to meet the operational processing efficiency.

[0080] In FIG7(a), the direction (gas injection horizontal direction) of the hole 711 in the flow control ring 710 may be the center 712 of the flow control ring. In this case, the gas injection horizontal direction (G1) from the hole 711 is the same as the direction from the hole 711 to the center 712 of the flow control ring 710.

[0081] The angle between the horizontal direction of gas injection from hole 711 and the direction from hole 711 to the center 712 of the flow control ring 710 will be the injection angle, and in this case, the injection angle (X) will be 0 degrees (0°) and all the holes in the flow control ring 710 in Figure 7(a) will converge at the center 712.

[0082] In some cases, this 0 degree injection angle means that the gas mixing efficiency is low, which can lead to poor uniformity and resulting product quality. Therefore, in order to improve the gas mixing efficiency, sometimes the injection angle (Y) can be a value other than 0, as in FIG. 7( b). The injection angle can be selected to meet the wafer processing requirements, such as between 0° and 80°, and in this case, all the holes in the flow control ring 720 in FIG. 7( b) do not converge at the center 722.

[0083] For effective gas injection with non-zero injection angles, the flow control ring should be thick enough to accommodate the through holes. The thickness (t) of the flow control ring 720 in Figure 7(b) can be selected to meet system requirements, for example between 1 mm and 10 mm.

[0084] exist Figure 8 , a side view of the flow control ring 810 and the aperture 811 can be shown.

[0085] The angle between the horizontal side direction (H) of the flow control ring of the hole 811 and the downward direction (D) of the gas injection of the hole 811 may be defined as the downward angle, and Figure 8 The downward angle of the hole 811 in will be 45°. The downward angle of the hole 811 will be selected to meet the processing requirements, for example, between 0° and 50°.

[0086] The downward angles of the holes in the flow control ring 810 may be the same or different.

[0087] Because the length (d) of the flow control ring 810 may determine the number of holes 811 in the retaining ring 813 of the flow control ring, the length (d) of the flow control ring 810 may vary from 4 mm to 100 mm to obtain maximum gas mixing effect.

[0088] Figure 8 The inner diameter (L) of the flow control ring 810 in can vary between 20 mm and 200 mm, and the diameter of the hole can vary between 0.5 mm and 5 mm.

[0089] The arrangement of the above-mentioned devices is only an illustration of the application of the principles of the present invention, and many other embodiments and modifications may be made without departing from the spirit and scope of the present invention defined in the claims. Therefore, the scope of the present invention should not be determined with reference to the above description, but with reference to the full scope of the appended claims and their equivalents.

Claims

1. A gas input structure for providing a gas for use in a wafer processing chamber, the structure comprising: a flow control ring having a sealing portion and a retaining ring; as well as an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel including a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing gas from at least one gas tunnel to be injected into the gas channel through the plurality of holes, Wherein, the gas channel is connected to the wafer processing chamber.

2. The gas input structure according to claim 1, wherein: Each of the plurality of holes is inclined at an injection angle and a downward angle.

3. The gas input structure according to claim 2, wherein: The injection angle of each of the plurality of holes is between 0 degrees and 80 degrees.

4. The gas input structure according to claim 2, wherein: The downward angle of each of the plurality of holes is between 0 degrees and 50 degrees.

5. The gas input structure according to claim 1, wherein: The length of the flow control ring is between 4 mm and 100 mm.

6. The gas input structure according to claim 1, wherein: The thickness of the flow control ring is between 1 mm and 10 mm.

7. A wafer processing device comprising: Reaction chamber; and Gas input structure, including: a flow control ring having a sealing portion and a retaining ring; and an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel including a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing gas from at least one gas tunnel to be injected into the gas channel through the plurality of holes, Wherein, the gas channel is connected to the reaction chamber.

8. The wafer processing apparatus according to claim 7, wherein: Each of the plurality of holes is inclined at an injection angle and a downward angle.

9. The wafer processing apparatus according to claim 8, wherein: The injection angle of each of the plurality of holes is between 0 degrees and 80 degrees.

10. The wafer processing apparatus according to claim 8, wherein: The downward angle of each of the plurality of holes is between 0 degrees and 50 degrees.

11. The wafer processing apparatus according to claim 7, wherein: The length of the flow control ring is between 4 mm and 100 mm.

12. The wafer processing apparatus according to claim 7, wherein: The thickness of the flow control ring is between 1 mm and 10 mm.

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