Integrated infrared detector and heat distribution measuring method thereof

Abstract

The invention provides an integrated infrared detector and a heat distribution measuring method thereof.The integrated infrared detector comprises an MEMS infrared sensor, a semiconductor circuit and a heating distribution measuring assembly, the semiconductor circuit is located on the periphery of the MEMS infrared sensor, and the heating distribution measuring assembly is located on the periphery of the semiconductor circuit; the heat distribution measuring assembly is located on the periphery of the MEMS infrared sensor and electrically connected with the semiconductor circuit, the heat distribution measuring assembly comprises a plurality of heat pickup areas and a plurality of measuring ports, and the heat pickup areas are distributed in different directions of the MEMS infrared sensor; a hot end and a cold end of a thermoelectric temperature measurement unit of the heating distribution measurement assembly are respectively located in different heat pickup areas, and a positive end and a negative end of the thermoelectric temperature measurement unit are respectively led out to different measurement ports. According to the invention, the influence of partial heating of the semiconductor circuit on pixels at different positions in the sensor in the working process of the integrated infrared detector can be evaluated, and the error of the measurement result of the sensor caused by circuit heating is reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors and relates to an integrated infrared detector and a heat distribution measurement method thereof. Background Art

[0002] A sensor is a device that can convert physical or chemical quantities into electrical signals that are easy to use. Micro-Electro-Mechanical System (MEMS) technology is a bridge between the macroscopic world and the microscopic world. At present, the integration of MEMS sensors and signal processing circuits is the main technical trend in the development of sensor technology, making sensors more miniaturized and intelligent. MEMS thermopiles are widely used in the field of infrared temperature measurement. Based on the Seebeck effect, when external radiation reaches the surface of the chip, the thermopile chip produces a temperature difference, thereby generating a potential difference, achieving the purpose of temperature measurement.

[0003] Thermopile chips can realize functions such as regional detection in addition to single-point temperature measurement through arrays. However, in general applications, thermopiles are prepared through simple arrays and then connected and packaged with application-specific integrated circuit (ASIC) chips through wire bonding. Thermopile detectors or array infrared detectors are connected to ASIC chips through wire bonding, which has problems such as complicated processes, large size, and high overall cost.

[0004] In order to further develop the intelligent miniaturization of sensors, most smart sensors are manufactured by simply integrating MEMS array sensors with ASIC chips through process compatibility. In an existing CMOS-MEMS fully integrated thermopile chip based on CMOS technology, the micro-motor system and the integrated circuit system are separated on the substrate, and an isolation layer is provided on the substrate; the dedicated integrated circuit system includes a MOS tube, the micro-motor system includes a thermopile and a heat sink area formed by multiple groups of thermocouples connected in series, a cavity is opened on the back of the substrate where the micro-motor system is located, and the isolation layer separates the thermocouple and the heat sink area from the cavity, the thermocouple is electrically connected to the dedicated integrated circuit system, the heat sink area is grounded or suspended, and the inner wall of the heat sink area constitutes the cold end boundary and extends to the top of the cavity, so that the inner wall of the heat sink area is the cold end of the thermopile, and the distance between the cold end and the hot end of the thermopile is fixed, thereby improving the consistency of the product. Although this intelligent sensor with integrated thermopile reduces the cost and reduces the size to a certain extent, it ignores the influence of the heat generated during the operation of the ASIC chip on the measurement of the MEMS array thermopile, introducing errors.

[0005] Therefore, how to provide a new integrated infrared detector and its heat distribution measurement method to reduce the impact of circuit heating around the MEMS infrared sensor on the measurement results of the MEMS infrared sensor and improve the measurement accuracy of the infrared temperature sensor has become an important technical problem that needs to be urgently solved by technical personnel in this field.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an integrated infrared detector and a method for measuring heat distribution thereof, so as to solve the problem that the existing integrated infrared detector is prone to reduced measurement accuracy due to circuit heating.

[0008] To achieve the above-mentioned and other related purposes, the present invention provides an integrated infrared detector, comprising:

[0009] MEMS infrared sensor;

[0010] A semiconductor circuit is located outside the MEMS infrared sensor;

[0011] A heat distribution measurement component is located at the periphery of the MEMS infrared sensor and is electrically connected to the semiconductor circuit. The heat distribution measurement component includes multiple heat pickup areas and multiple measurement ports. The multiple heat pickup areas are distributed at different positions of the MEMS infrared sensor. The heat distribution measurement component includes at least one thermoelectric temperature measurement unit. The hot end and the cold end of the thermoelectric temperature measurement unit are respectively located at different heat pickup areas. The positive terminal and the negative terminal of the thermoelectric temperature measurement unit are respectively led to different measurement ports.

[0012] Optionally, the semiconductor circuit is located at the periphery of the heat distribution measurement component; or a part of the semiconductor circuit is located at the periphery of the heat distribution measurement component, and another part is located below the heat distribution measurement component.

[0013] Optionally, the heat distribution measurement component includes at least one temperature measurement group, each of the temperature measurement group includes a plurality of the thermoelectric temperature measurement units, and the plurality of the thermoelectric temperature measurement units located in the same temperature measurement group are evenly distributed on the same circle with the center of the MEMS infrared sensor as the center and are connected in sequence, the proximal ends of two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group are located in the same heat picking up area, the far ends of two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group are located in different heat picking up areas respectively, and a common measurement port is led out from the connection between two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group.

[0014] Optionally, each of the heat pickup areas corresponds to at least one of the measurement ports.

[0015] Optionally, two adjacently connected thermoelectric temperature measuring units in the same temperature measuring group are connected in forward series or reverse series.

[0016] Optionally, the heat distribution measurement component includes a plurality of temperature measurement groups distributed sequentially from the inside to the outside with the MEMS infrared sensor as the center, and the orientations of the plurality of heat picking up areas corresponding to the temperature measurement groups located in the inner circle are staggered with the orientations of the plurality of heat picking up areas corresponding to the temperature measurement groups located in the outer circle.

[0017] Optionally, the structures of the multiple thermoelectric temperature measuring units in the same temperature measurement group are the same, and the structures of the multiple thermoelectric temperature measuring units in different temperature measurement groups are the same or different.

[0018] Optionally, the cross-section of the MEMS infrared sensor is polygonal, and the thermoelectric temperature measuring unit includes a zigzag thermocouple strip or a straight thermocouple strip; or the cross-section of the MEMS infrared sensor is circular, and the thermoelectric temperature measuring unit includes an arc-shaped thermocouple strip.

[0019] Optionally, the thermoelectric temperature measuring unit includes a group of thermocouple pairs or multiple groups of thermocouple pairs connected in series; the thermocouple pairs include a first thermocouple bar and a second thermocouple bar connected to each other, the first thermocouple bar and the second thermocouple bar are located in the same plane or different planes, and the first thermocouple bar and the second thermocouple bar use semiconductor materials of different conductive types or use different conductor materials.

[0020] Optionally, the number of the heat pickup areas ranges from 2 to 100.

[0021] Optionally, a plane rectangular coordinate system is established on the plane where the MEMS infrared sensor is located with the center of the MEMS infrared sensor as the origin, and the orientations of the multiple heat picking areas include at least four orientations of 0°, 90°, 180° and 270°, or at least eight orientations of 0°, 45°, 90°, 135°, 180°, 225°, 270° and 315°, or at least 12 orientations of 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, 330° and 360°.

[0022] Optionally, the MEMS infrared sensor includes a plurality of thermopile pixel structures arranged in an array.

[0023] The present invention also provides a method for measuring heat distribution of an integrated infrared detector, which provides an integrated infrared detector as described in any one of the above items, reads the potential difference between the two measurement ports corresponding to any two of the heat pickup areas to determine the temperature difference between the any two heat pickup areas.

[0024] Optionally, the semiconductor circuit comprises a correction module, which corrects the measurement result of the MEMS infrared sensor based on the temperature difference between the plurality of heat pickup areas.

[0025] As described above, the integrated infrared detector of the present invention includes a MEMS infrared sensor, a semiconductor circuit and a heat distribution measurement component, wherein the semiconductor circuit is located at the periphery of the MEMS infrared sensor, the heat distribution measurement component is located at the periphery of the MEMS infrared sensor and is electrically connected to the semiconductor circuit, the heat distribution measurement component includes a plurality of heat pickup areas and a plurality of measurement ports, the plurality of heat pickup areas are distributed at different positions of the MEMS infrared sensor, the heat distribution measurement component includes at least one thermoelectric temperature measurement unit, the hot end and the cold end of the thermoelectric temperature measurement unit are respectively located at different heat pickup areas, and the positive terminal and the negative terminal of the thermoelectric temperature measurement unit are respectively led to different measurement ports. The heat distribution measurement method of the integrated infrared detector of the present invention can judge the temperature difference between any two heat pickup areas by reading the potential difference between the two measurement ports corresponding to any two heat pickup areas, thereby being able to evaluate the influence of the heat generation of the semiconductor circuit part on the pixels at different positions in the MEMS infrared sensor during the operation of the integrated infrared detector, and reduce the error caused by the heat generation of the semiconductor circuit on the measurement result of the MEMS infrared sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the first embodiment is shown.

[0027] Figure 2 Display as Figure 1 Simplified cross-sectional view of the structure shown.

[0028] Figure 3 Shown is a schematic diagram of an exemplary structure of a thermocouple pair in the integrated infrared detector of the present invention.

[0029] Figure 4 Shown is another exemplary structural schematic diagram of a thermocouple pair in the integrated infrared detector of the present invention.

[0030] Figure 5 It shows the situation that the thermoelectric temperature measuring unit in the integrated infrared detector of the present invention includes two groups of thermocouple pairs connected in series and all the thermocouple strips are located in the same plane.

[0031] Figure 6 It shows the situation that the thermoelectric temperature measuring unit in the integrated infrared detector of the present invention includes two groups of thermocouple pairs connected in series and all the thermocouple strips are located in different planes.

[0032] Figure 7 Displayed as Figure 1 A more detailed plan view of the integrated infrared detector layout shown.

[0033] Figure 8 Display as Figure 7 Equivalent circuit diagram of the structure shown.

[0034] Fig. 9 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the second embodiment is shown.

[0035] Fig.10 Display as Fig. 9 Equivalent circuit diagram of the structure shown.

[0036] Fig.11 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the third embodiment is shown.

[0037] Fig.12 Display as Fig.11 Equivalent circuit diagram of the structure shown.

[0038] Fig.13 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the fourth embodiment is shown.

[0039] Fig.14 Display as Fig.13 Equivalent circuit diagram of the structure shown.

[0040] Fig.15 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the fifth embodiment is shown.

[0041] Fig.16 Display as Fig.15 Equivalent circuit diagram of the structure shown.

[0042] Fig.17 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the sixth embodiment is shown.

[0043] Fig.18 Display as Fig.17 Equivalent circuit diagram of the structure shown.

[0044] Fig.19 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the seventh embodiment is shown.

[0045] Fig. 20 Display as Fig.19 Equivalent circuit diagram of the structure shown.

[0046] Fig.21 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the eighth embodiment is shown.

[0047] Fig. 22 Display as Fig.21 Equivalent circuit diagram of the structure shown.

[0048] Fig.23 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the ninth embodiment is shown.

[0049] Fig.24 Displayed as Fig.23 A more detailed plan view of the integrated infrared detector layout shown.

[0050] Fig.25 Display as Fig.24 Equivalent circuit diagram of the structure shown.

[0051] Fig.26 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the tenth embodiment is shown.

[0052] Fig. 27 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the eleventh embodiment is shown.

[0053] Fig.28 An exemplary plan layout diagram of the integrated infrared detector of the present invention in the twelfth embodiment is shown.

[0054] Component number description

[0055] 1 MEMS infrared sensor

[0056] 101 Thermopile Pixel Structure

[0057] 1011 Cavity

[0058] 2 Semiconductor circuits

[0059] 3 Heat distribution measurement components

[0060] 301 The first thermoelectric temperature measurement unit

[0061] 302 Second thermoelectric temperature measuring unit

[0062] 303 The third thermoelectric temperature measuring unit

[0063] 304 The fourth thermoelectric temperature measuring unit

[0064] 305 Fifth thermoelectric temperature measuring unit

[0065] 306 The sixth thermoelectric temperature measuring unit

[0066] 307 Seventh Thermoelectric Temperature Measurement Unit

[0067] 308 The eighth thermoelectric temperature measuring unit

[0068] 3a First thermocouple strip

[0069] 3b Second thermocouple strip

[0070] 3c Connection

[0071] 3d insulation layer

[0072] A The first heat pickup area

[0073] B Second heat pickup area

[0074] C The third heat pickup area

[0075] D Fourth heat pickup area

[0076] E Fifth heat pickup area

[0077] F Sixth heat pickup area

[0078] G Seventh heat pickup area

[0079] H Eighth heat pickup area

[0080] a1 First measurement port

[0081] b1 Third measurement port

[0082] c1 Fourth measurement port

[0083] d1 Fifth measurement port

[0084] e1 Second measurement port

[0085] a2 Sixth measurement port

[0086] b2 Eighth measurement port

[0087] c2 Ninth measurement port

[0088] d2 Tenth measurement port

[0089] e2 Seventh measurement port DETAILED DESCRIPTION

[0090] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0091] See also Figures 1 to 28 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0092] Embodiment 1

[0093] This embodiment provides an integrated infrared detector. Figure 1 and Figure 2 ,in, Figure 1 An example plan layout diagram of the integrated infrared detector of this embodiment is shown. Figure 2 Display as Figure 1 A simplified cross-sectional view of the structure shown, the integrated infrared detector includes a MEMS infrared sensor 1, a semiconductor circuit 2 and a heat distribution measurement component 3, wherein the semiconductor circuit 2 is located at the periphery of the MEMS infrared sensor 1, and the heat distribution measurement component 3 is located at the periphery of the MEMS infrared sensor 1 and is electrically connected to the semiconductor circuit 2.

[0094] Specifically, in the integrated infrared detector of this embodiment, the so-called integrated type means that the MEMS infrared sensor 1, the semiconductor circuit 2 and the heat distribution measurement component 3 share a semiconductor substrate, and when the semiconductor circuit 2 is manufactured by using the CMOS process, at least a part of the MEMS infrared sensor 1 and at least a part of the heat distribution measurement component 3 can be manufactured simultaneously. The material of the semiconductor substrate can be silicon, germanium, germanium silicon, III-V compounds or other suitable semiconductor materials.

[0095] As an example, the MEMS infrared sensor 1 may be an infrared thermopile sensor or other suitable types. In this embodiment, the MEMS infrared sensor 1 takes an infrared thermopile sensor as an example, which includes a plurality of thermopile pixel structures 101 arranged in an array, for example Figure 1 The multiple thermopile pixel structures 101 are arranged in a 3×3 matrix, but in other embodiments, the number and specific arrangement of the pixel structures constituting the MEMS infrared sensor 1 can be adjusted as needed and are not limited to this embodiment.

[0096] As an example, the thermopile pixel structure 101 includes a cavity 1011, a support frame located around the cavity, and an infrared absorption film and a cantilever beam located above the cavity, one end of the cantilever beam is connected to the support frame, and the other end is connected to the edge of the infrared absorption film. The thermopile pixel structure 101 also includes a temperature difference heat pile, and the temperature difference heat pile includes a plurality of groups of thermocouple pairs, and the thermocouple pairs extend from the support frame through the cantilever beam to the infrared absorption film, the hot end of the thermocouple pair is located on the infrared absorption film, and the cold end of the thermocouple pair is located on the support frame. Release grooves can be selectively provided in the infrared absorption film and the cantilever beam, which can serve as auxiliary injection channels for etching liquid to form the cavity on the one hand, and can reduce the thermal conductivity of the cantilever beam and reduce the heat loss of the infrared absorption film on the other hand, thereby further ensuring the performance of the temperature difference heat pile. A heating resistor and / or a heat capacity enhancement body can be selectively arranged in the central area of ​​the infrared absorption film. The method of heating the temperature difference thermal pile by the heating resistor can actively cause a temperature difference between the hot end and the cold end of the thermocouple pair, thereby realizing the function of self-detection and calibration of whether the working state of the temperature difference thermal pile is normal. The heat capacity enhancement body is located in the central area of ​​the infrared absorption film, which can increase the heat capacity of the hot end of the thermal pile to a certain extent, accumulate more heat, increase the temperature difference between the hot and cold ends of the thermal pile, and thereby improve the voltage response of the thermo difference thermal pile. Figure 1 The thermopile pixel structure 101 shown in the figure is only an example. In other embodiments, the structure and layout of the thermopile pixel structure 101 can be adjusted as needed and are not limited to this embodiment.

[0097] As an example, the MEMS infrared sensor 1 is located at the center of the integrated infrared detector and is surrounded by the semiconductor circuit 2, so that the MEMS infrared sensor 1 can maintain the same thermal capacitance and thermal conductivity as the substrate in all directions, thereby reducing thermal conduction errors. The semiconductor circuit 2 includes but is not limited to an application specific integrated circuit (ASIC).

[0098] As an example, the semiconductor circuit 2 may be entirely located outside the heat distribution measurement component 3 , or may be partially located outside the heat distribution measurement component 3 and another partially located below the heat distribution measurement component 3 .

[0099] Specifically, the heat distribution measurement component 3 includes a plurality of heat pickup areas and a plurality of measurement ports (not shown). Figure 1 In the example presented, the heat transferred from the semiconductor circuit 2 to the MEMS infrared sensor 1 is divided into eight directions, corresponding to which are set the first heat pickup area A, the second heat pickup area B, the third heat pickup area C, the fourth heat pickup area D, the fifth heat pickup area E, the sixth heat pickup area F, the seventh heat pickup area G, and the eighth heat pickup area H. A plane rectangular coordinate system is established on the plane where the MEMS infrared sensor 1 is located with the center of the MEMS infrared sensor as the origin, and the first heat pickup area A, the second heat pickup area B, the third heat pickup area C, the fourth heat pickup area D, the fifth heat pickup area E, the sixth heat pickup area F, the seventh heat pickup area G and the eighth heat pickup area H are respectively distributed in the eight directions of 0°, 45°, 90°, 135°, 180°, 225°, 270° and 315° of the MEMS infrared sensor 1. In other examples, the number of the heat pickup areas can also be adjusted as needed, for example, it can be 2-100 or more, and the more the number of the heat pickup areas is, the more comprehensive the heat distribution around the MEMS infrared sensor 1 can be obtained. At the same time, the azimuth distribution of the multiple heat pickup areas can also be adjusted as needed, for example, they can be distributed only in the four directions of 0°, 90°, 180° and 270°, or in the 12 directions of 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, 330° and 360°, etc.

[0100] Specifically, the heat distribution measurement component 3 includes at least one thermoelectric temperature measuring unit, the hot end and the cold end of the thermoelectric temperature measuring unit are respectively located in different heat picking up areas, and the positive end and the negative end of the thermoelectric temperature measuring unit are respectively led out to different measuring ports, and the temperature difference between the two heat picking up areas can be calculated by obtaining the potential difference between the two measuring ports.

[0101] It should be noted here that, in the present invention, the thermoelectric temperature measuring unit is used to measure the temperature difference between two different heat picking up areas. In the actual working process, the temperatures of the two heat picking up areas may be one high and one low, or vice versa, or the temperatures may be the same. Therefore, the aforementioned "hot end and cold end of the thermoelectric temperature measuring unit" are only the definition of the name and do not mean that the hot end is hotter and the cold end is colder. When one end of the thermoelectric temperature measuring unit is defined as the hot end, the other end is the cold end, and vice versa.

[0102] Specifically, when the number of the heat pickup areas is more than two, a plurality of the thermoelectric temperature measuring units need to be provided.

[0103] As an example, the heat distribution measurement component 3 includes at least one temperature measurement group, each of the temperature measurement group includes a plurality of the thermoelectric temperature measurement units, and the plurality of the thermoelectric temperature measurement units located in the same temperature measurement group are evenly distributed on the same circle with the center of the MEMS infrared sensor 1 as the center and are connected in sequence, the proximal ends of two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group are located in the same heat picking up area, the far ends of two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group are located in different heat picking up areas respectively, and a common measurement port is led out from the connection between two adjacently connected thermoelectric temperature measurement units located in the same temperature measurement group.

[0104] As an example, in order to better evaluate the heat transferred to the MEMS infrared sensor 1 in all directions, the multiple thermoelectric temperature measurement units located in the same temperature measurement group have the same structure, that is, maintain the same size and morphology, and the heat distribution measurement component 3 is overall centrally symmetrical about the MEMS infrared sensor 1, thereby ensuring that the heat distribution measurement component 3 to the frame of the MEMS infrared sensor 1 has the same thermal capacitance and thermal conductivity, so that the heat distribution measurement component 3 measures the heat transferred from the semiconductor circuit 2 to the MEMS infrared sensor 1 more accurately.

[0105] As an example, when the heat distribution measurement component includes multiple temperature measurement groups, the multiple temperature measurement groups are distributed in sequence from the inside to the outside with the MEMS infrared sensor 1 as the center, and the orientations of the multiple heat picking areas corresponding to the temperature measurement groups located in the inner circle are staggered with the orientations of the multiple heat picking areas corresponding to the temperature measurement groups located in the outer circle.

[0106] As an example, the structures of the multiple thermoelectric temperature measurement units in different temperature measurement groups may be the same or different, as long as the heat distribution measurement component 3 is centrally symmetrical about the MEMS infrared sensor 1 as a whole.

[0107] exist Figure 1 In the example presented, the heat distribution measurement component 3 includes eight thermoelectric temperature measuring units, namely a first thermoelectric temperature measuring unit 301, a second thermoelectric temperature measuring unit 302, a third thermoelectric temperature measuring unit 303, a fourth thermoelectric temperature measuring unit 304, a fifth thermoelectric temperature measuring unit 305, a sixth thermoelectric temperature measuring unit 306, a seventh thermoelectric temperature measuring unit 307 and an eighth thermoelectric temperature measuring unit 308, wherein the first thermoelectric temperature measuring unit 301, the second thermoelectric temperature measuring unit 302, the third thermoelectric temperature measuring unit 303 and the fourth thermoelectric temperature measuring unit 304 form an inner circle temperature measurement group, the fifth thermoelectric temperature measuring unit 305, the sixth thermoelectric temperature measuring unit 306, the seventh thermoelectric temperature measuring unit 307 and the eighth thermoelectric temperature measuring unit 308 The thermoelectric temperature measuring unit 308 constitutes an outer ring temperature measuring group and is located on the periphery of the inner ring temperature measuring group. The inner ring temperature measuring group corresponds to the first heat picking area A, the third heat picking area C, the fifth heat picking area E and the seventh heat picking area G, and the outer ring temperature measuring group corresponds to the second heat picking area B, the fourth heat picking area D, the sixth heat picking area F and the eighth heat picking area H. The inner ring temperature measuring group can be used to evaluate the heat differences transferred to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270°, and the outer ring temperature measuring group can be used to evaluate the heat differences transferred to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315°.

[0108] In other examples, the number and arrangement of the thermoelectric temperature measuring units included in the heat distribution measurement component 3 can be adjusted according to the number and arrangement of the heat pickup areas, and is not limited to this embodiment.

[0109] Specifically, the thermoelectric temperature measuring unit includes a thermocouple pair, see Figure 3, which is a schematic diagram of an exemplary structure of the thermocouple pair, includes a first thermocouple bar 3a and a second thermocouple bar 3b connected by a connecting portion 3c, wherein the first thermocouple bar 3a and the second thermocouple bar 3b are made of semiconductor materials of different conductive types (e.g., a P-type polysilicon thermocouple bar and an N-type polysilicon thermocouple bar connected in series by metal aluminum) or different conductor materials (e.g., a metal platinum thermocouple bar and a platinum-bismuth alloy thermocouple bar, etc.), and the connecting portion 3c can be made of a metal plug or a metal lead. When the temperature at one end of the thermocouple pair is high and the temperature at the other end is low, the two ends of the thermocouple pair are in different temperature fields and a temperature difference is generated. The temperature difference causes the carriers in the thermocouple bar to move and gather at the end with a lower temperature, thereby causing a potential difference, thereby achieving the purpose of evaluating the temperature of different regions.

[0110] exist Figure 3 In the example presented, the first thermocouple strip 3a and the second thermocouple strip 3b are located in the same plane. However, in other embodiments, the first thermocouple strip 3a and the second thermocouple strip 3b may also be located in different planes, which can be determined according to process requirements. Figure 4 , which is another example structural diagram of the thermocouple pair, wherein the first thermocouple bar 3a and the second thermocouple bar 3b are located in different planes, and the upper and lower thermocouple bars are isolated by an insulating layer 3d, and the insulating layer 3d can be a silicon oxide layer or a silicon nitride layer.

[0111] As an example, the thermoelectric temperature measuring unit may include a set of thermocouple pairs or multiple sets of thermocouple pairs connected in series, wherein multiple sets of thermocouple pairs connected in series can further increase the response voltage. Figure 5 and Figure 6 ,in, Figure 5 The thermoelectric temperature measuring unit includes two sets of thermocouples connected in series and all the thermocouples are located in the same plane. Figure 6 It is shown that the thermoelectric temperature measuring unit includes two groups of thermocouple pairs connected in series, and different thermocouple strips in the thermocouple pairs are located in different planes.

[0112] As an example, see Figure 7 , shown as using Figure 1 A more detailed planar layout diagram of the integrated infrared detector of the layout shown in FIG. 1 , wherein the cross section of the MEMS infrared sensor 1 is square, the thermocouple bars of the inner circle thermoelectric temperature measuring unit of the heat distribution measurement component 3 are in a zigzag shape, and the thermocouple bars of the outer circle thermoelectric temperature measuring unit of the heat distribution measurement component 3 are in a straight line shape. In other embodiments, the cross section of the MEMS infrared sensor 1 may also be other polygonal or circular, and the thermocouple bars of the thermoelectric temperature measuring unit may also be in an arc shape or other suitable shapes, not limited to this embodiment.

[0113] As an example, two adjacently connected thermoelectric temperature measuring units in the same temperature measuring group may be connected in series in a forward direction or in a reverse direction, wherein: Figure 7 What is presented is the situation that two adjacently connected thermoelectric temperature measuring units are connected in reverse series.

[0114] See also Figure 8 , displayed as Figure 7 Equivalent circuit diagram of the structure shown.

[0115] Please refer to Figure 7 and Figure 8 For the first thermoelectric temperature measuring unit 301, the second thermoelectric temperature measuring unit 302, the third thermoelectric temperature measuring unit 303 and the fourth thermoelectric temperature measuring unit 304 located in the inner circle temperature measuring group, the positive poles of the first thermoelectric temperature measuring unit 301 and the fourth thermoelectric temperature measuring unit 304 located at the head and tail ends lead out the first measurement port a1 and the second measurement port e1 respectively, corresponding to the fifth heat picking area E; the connection between the first thermoelectric temperature measuring unit 301 and the second thermoelectric temperature measuring unit 302 leads out the third measurement port b1, corresponding to the seventh heat picking area G; the connection between the second thermoelectric temperature measuring unit 302 and the third thermoelectric temperature measuring unit 303 leads out the fourth measurement port c1, corresponding to the first heat picking area A; the connection between the third thermoelectric temperature measuring unit 303 and the fourth thermoelectric temperature measuring unit 304 leads out the fifth measurement port d1, corresponding to the third heat picking area C.

[0116] Similarly, for the fifth thermoelectric temperature measuring unit 305, the sixth thermoelectric temperature measuring unit 306, the seventh thermoelectric temperature measuring unit 307 and the eighth thermoelectric temperature measuring unit 308 located in the outer circle temperature measuring group, the positive poles of the fifth thermoelectric temperature measuring unit 305 and the eighth thermoelectric temperature measuring unit 308 located at the head and tail ends lead out the sixth measurement port a2 and the seventh measurement port e2 respectively, corresponding to the sixth heat picking up area F; the connection between the fifth thermoelectric temperature measuring unit 305 and the sixth thermoelectric temperature measuring unit 306 leads out the eighth measurement port b2, corresponding to the eighth heat picking up area F; the connection between the sixth thermoelectric temperature measuring unit 306 and the seventh thermoelectric temperature measuring unit 307 leads out the ninth measurement port c2, corresponding to the second heat picking up area B; the connection between the seventh thermoelectric temperature measuring unit 307 and the eighth thermoelectric temperature measuring unit 308 leads out the tenth measurement port d2, corresponding to the fourth heat picking up area D.

[0117] It should be noted that the first measurement port a1 and the second measurement port e1 both correspond to the fifth heat pickup region E, and the sixth measurement port a2 and the seventh measurement port e2 both correspond to the sixth heat pickup region F. That is, in the present invention, each of the heat pickup regions may correspond to at least one measurement port.

[0118] Specifically, the temperature difference between any two heat pickup areas can be determined by reading the potential difference between the two measurement ports corresponding to the two heat pickup areas. (a1,b1) It shows the temperature of the fifth heat pickup area E and the seventh heat pickup area G transferred to the edge of the MEMS infrared sensor 1. (a1,b1) =0, the temperatures at both locations are the same; when V (a1,b1) ≠0, it means that there is a temperature difference between the two places, and further processing is needed in combination with the circuit to eliminate the influence of the temperature difference on the accuracy of the nearest pixel.

[0119] As an example, multiple measurement ports of the heat distribution measurement component 3 are electrically connected to the semiconductor circuit 2 through leads, and the semiconductor circuit 2 includes a correction module, which corrects the measurement result of the MEMS infrared sensor based on the temperature difference between the multiple heat pickup areas.

[0120] Similarly, V (b1,c1) represents the temperature of the seventh heat pickup area G and the first heat pickup area A transferred to the edge of the MEMS infrared sensor 1, V (c1,d1) represents the temperature of the first heat pickup area A and the third heat pickup area C transferred to the edge of the MEMS infrared sensor 1, V (d1,e1) It represents the temperature conditions of the third heat picking area C and the fifth heat picking area E transferred to the edge of the MEMS infrared sensor 1 .

[0121] The special thing is, because Figure 7 In the example presented, two adjacent temperature measurement units in the same temperature measurement group are connected in reverse series, so V (a1,c1) and V (c1,e1) It also shows the temperature of the fifth heat pickup area E and the first heat pickup area A transferred to the edge of the MEMS infrared sensor 1. (a1,c1) =V (c1,e1) = 0, it means the two temperatures are the same; when V (a1,c1) =V (c1,e1) ≠0, it means that there is a temperature difference between the two places, and further processing is needed in combination with the circuit to eliminate the influence of the temperature difference on the accuracy of the nearest pixel.

[0122] Similarly, V (b1,d1) It shows the temperature conditions of the seventh heat picking area G and the third heat picking area C transferred to the edge of the MEMS infrared sensor 1 .

[0123] Embodiment 2

[0124] This embodiment provides an integrated infrared detector. Fig. 9 and Fig.10 ,in, Fig. 9 Shown is a plan layout diagram of the integrated infrared detector. Fig.10 Display as Fig. 9 Equivalent circuit diagram of the structure shown.

[0125] Specifically, the integrated infrared detector of this embodiment is different from that of the embodiment 1. Figure 7 The examples presented adopt basically the same technical solution, except that in the first embodiment Figure 7 In the example presented, the two thermocouple strips in the thermocouple pair are located in the same plane, while in the integrated infrared detector of this embodiment, the two thermocouple strips in the thermocouple pair are located in different planes and arranged in a double layer, which is conducive to further reducing the size of the device.

[0126] Embodiment 3

[0127] This embodiment provides an integrated infrared detector. Fig.11 and Fig.12 ,in, Fig.11 Shown is a plan layout diagram of the integrated infrared detector. Fig.12 Display as Fig.11 Equivalent circuit diagram of the structure shown.

[0128] Specifically, the integrated infrared detector of this embodiment is different from that of the embodiment 1. Figure 7 The examples presented adopt basically the same technical solution, except that in the first embodiment Figure 7In the example presented, the thermocouple bars of the temperature measuring unit located in the inner circle temperature measuring group are zigzag thermocouple bars, and the thermocouple bars of the temperature measuring unit located in the outer circle temperature measuring group are linear thermocouple bars. The heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270° is evaluated through the inner circle temperature measuring group, and the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315° is evaluated through the outer circle temperature measuring group. In this embodiment, the thermocouple bars of the temperature measuring units located in the inner circle temperature measuring group are linear thermocouple bars, and the thermocouple bars of the temperature measuring units located in the outer circle temperature measuring group are zigzag thermocouple bars. The heat differences transmitted to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315° are evaluated through the inner circle temperature measuring group, and the heat differences transmitted to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270° are evaluated through the outer circle temperature measuring group.

[0129] Embodiment 4

[0130] This embodiment provides an integrated infrared detector. Fig.13 and Fig.14 ,in, Fig.13 Shown is a plan layout diagram of the integrated infrared detector. Fig.14 Display as Fig.13 Equivalent circuit diagram of the structure shown.

[0131] Specifically, the integrated infrared detector of this embodiment and the integrated infrared detector in Example 3 adopt basically the same technical solution. The difference is that in the integrated infrared detector in Example 3, the two thermocouple strips in the thermocouple pair are located in the same plane, while in the integrated infrared detector of this embodiment, the two thermocouple strips in the thermocouple pair are located in different planes and arranged in a double layer, which is conducive to further reducing the size of the device.

[0132] Embodiment 5

[0133] This embodiment provides an integrated infrared detector. Fig.15 and Fig.16 ,in, Fig.15 Shown is a plan layout diagram of the integrated infrared detector. Fig.16 Display as Fig.15 Equivalent circuit diagram of the structure shown.

[0134] Specifically, the integrated infrared detector of this embodiment is different from that of the embodiment 1. Figure 7 The examples presented adopt basically the same technical solution, except that in the first embodiment Figure 7The example presented includes two temperature measurement groups. The inner circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 0°, 90°, 180° and 270°. The outer circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 45°, 135°, 225° and 315°. A total of the heat difference transmitted to the MEMS infrared sensor 1 from eight different directions can be evaluated. However, the integrated infrared detector of this embodiment includes only one temperature measurement group. The thermocouple strips of the temperature measurement unit are zigzag thermocouple strips, which can only evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 0°, 90°, 180° and 270°.

[0135] Embodiment 6

[0136] This embodiment provides an integrated infrared detector. Fig.17 and Fig.18 ,in, Fig.17 Shown is a plan layout diagram of the integrated infrared detector. Fig.18 Display as Fig.17 Equivalent circuit diagram of the structure shown.

[0137] Specifically, the integrated infrared detector of this embodiment and the integrated infrared detector in Example 5 adopt basically the same technical solution. The difference is that in the integrated infrared detector in Example 5, the two thermocouple strips in the thermocouple pair are located in the same plane, while in the integrated infrared detector of this embodiment, the two thermocouple strips in the thermocouple pair are located in different planes and arranged in a double layer, which is conducive to further reducing the size of the device.

[0138] Embodiment 7

[0139] This embodiment provides an integrated infrared detector. Fig.19 and Fig. 20 ,in, Fig.19 Shown is a plan layout diagram of the integrated infrared detector. Fig. 20 Display as Fig.19 Equivalent circuit diagram of the structure shown.

[0140] Specifically, the integrated infrared detector of this embodiment is different from that of the embodiment 1. Figure 7 The examples presented adopt basically the same technical solution, except that in the first embodiment Figure 7The example presented includes two temperature measurement groups. The inner circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 0°, 90°, 180° and 270°, and the outer circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 45°, 135°, 225° and 315°. A total of the heat difference transmitted to the MEMS infrared sensor 1 from eight different directions can be evaluated. The integrated infrared detector of this embodiment includes only one temperature measurement group. The thermocouple bar of the temperature measurement unit uses a linear thermocouple bar, which can only evaluate the heat difference transmitted to the MEMS infrared sensor 1 from four directions of 45°, 135°, 225° and 315°.

[0141] Embodiment 8

[0142] This embodiment provides an integrated infrared detector. Fig.21 and Fig. 22 ,in, Fig.21 Shown is a plan layout diagram of the integrated infrared detector. Fig. 22 Display as Fig.21 Equivalent circuit diagram of the structure shown.

[0143] Specifically, the integrated infrared detector of this embodiment and the integrated infrared detector in Example 7 adopt basically the same technical solution. The difference is that in the integrated infrared detector in Example 7, the two thermocouple strips in the thermocouple pair are located in the same plane, while in the integrated infrared detector of this embodiment, the two thermocouple strips in the thermocouple pair are located in different planes and arranged in a double layer, which is conducive to further reducing the size of the device.

[0144] Embodiment 9

[0145] This embodiment provides an integrated infrared detector. Fig.23 , which is a plan layout diagram of the integrated infrared detector, and is similar to that in the first embodiment. Figure 1 The difference between the presented floor plan and the Figure 1 In the example presented, the multiple temperature measuring units are divided into two groups, one group is located in the inner circle and the other group is located in the inner circle. Fig.23 In the presented example, a plurality of temperature measurement units form a temperature measurement group and are distributed on the same circle.

[0146] As an example, see Fig.24 and Fig.25 ,in, Fig.24 Displayed as Fig.23 A more detailed plan view of the integrated infrared detector of the layout shown, Fig.25 Display as Fig.24 Equivalent circuit diagram of the structure shown.

[0147] Specifically, eight temperature measurement units are connected in reverse series to form a temperature measurement group, which can evaluate the heat difference transmitted to the MEMS infrared sensor 1 from eight directions of 0°, 45°, 90°, 135°, 180°, 225°, 270° and 315°.

[0148] Specifically, Fig.24 In the presented plan layout diagram, the two thermocouple strips in the thermocouple pair are located in different planes. In other embodiments, the two thermocouple strips in the thermocouple pair may also be located in the same plane. At the same time, the number of temperature measuring units located in the same circle may also be adjusted as needed, and is not limited to this embodiment.

[0149] Embodiment 10

[0150] This embodiment provides an integrated infrared detector. Fig.26 , showing a plan layout diagram of the integrated infrared detector.

[0151] Specifically, the integrated infrared detector of this embodiment is different from that of the embodiment 1. Figure 1 The examples presented adopt basically the same technical solution, except that in the first embodiment Figure 1 In the example presented, the cross-section of the MEMS infrared sensor 1 is square, the thermocouple bars of the inner circle thermoelectric temperature measuring unit of the heat distribution measurement component 3 are in a zigzag shape, and the thermocouple bars of the outer circle thermoelectric temperature measuring unit of the heat distribution measurement component 3 are in a straight line shape. In the integrated infrared detector of this embodiment, the cross-section of the MEMS infrared sensor 1 is circular, and the thermocouple bars of the inner circle thermoelectric temperature measuring unit and the outer circle thermoelectric temperature measuring unit of the heat distribution measurement component 3 are both in an arc shape.

[0152] Embodiment 11

[0153] This embodiment provides an integrated infrared detector. Fig. 27 , showing a plan layout diagram of the integrated infrared detector.

[0154] Specifically, the integrated infrared detector of this embodiment and the integrated infrared detector in Example 10 adopt basically the same technical solution, except that the eight temperature measuring units in the integrated infrared detector in Example 10 are divided into two groups, one group is located in the inner circle, and the other group is located in the outer circle. The inner circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270°, and the outer circle temperature measurement group is used to evaluate the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315°. The eight temperature measuring units in the integrated infrared detector of this embodiment are connected in reverse series in sequence to form a temperature measurement group, which can also evaluate the heat difference transmitted to the MEMS infrared sensor 1 from the eight directions of 0°, 45°, 90°, 135°, 180°, 225°, 270° and 315°.

[0155] It should be noted that in other embodiments, the number of temperature measuring units located in the same circle can also be adjusted as needed, and is not limited to Fig. 27 Eight are presented.

[0156] Embodiment 12

[0157] This embodiment provides an integrated infrared detector. Fig.28 , showing a plan layout diagram of the integrated infrared detector.

[0158] Specifically, the integrated infrared detector of the present embodiment and the integrated infrared detector of the tenth embodiment adopt basically the same technical solution, the difference being that, in the integrated infrared detector of the tenth embodiment, the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270° is evaluated by the inner ring temperature measurement group, and the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315° is evaluated by the outer ring temperature measurement group, while in the present embodiment, the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 45°, 135°, 225° and 315° is evaluated by the inner ring temperature measurement group, and the heat difference transmitted to the MEMS infrared sensor 1 from the four directions of 0°, 90°, 180° and 270° is evaluated by the outer ring temperature measurement group.

[0159] In summary, the integrated infrared detector of the present invention includes a MEMS infrared sensor, a semiconductor circuit and a heat distribution measurement component, wherein the semiconductor circuit is located at the periphery of the MEMS infrared sensor, the heat distribution measurement component is located at the periphery of the MEMS infrared sensor and is electrically connected to the semiconductor circuit, the heat distribution measurement component includes multiple heat pickup areas and multiple measurement ports, the multiple heat pickup areas are distributed at different positions of the MEMS infrared sensor, the heat distribution measurement component includes at least one thermoelectric temperature measurement unit, the hot end and the cold end of the thermoelectric temperature measurement unit are respectively located at different heat pickup areas, and the positive end and the negative end of the thermoelectric temperature measurement unit are respectively led to different measurement ports. The heat distribution measurement method of the integrated infrared detector of the present invention can judge the temperature difference between any two heat pickup areas by reading the potential difference between the two measurement ports corresponding to any two heat pickup areas, so as to evaluate the influence of the heat generation of the semiconductor circuit part on the pixels at different positions in the MEMS infrared sensor during the operation of the integrated infrared detector, and reduce the error caused by the heat generation of the semiconductor circuit on the measurement result of the MEMS infrared sensor. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0160] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An integrated infrared detector, characterized in that: include: MEMS infrared sensor; A semiconductor circuit is located outside the MEMS infrared sensor; A heat distribution measurement component is located at the periphery of the MEMS infrared sensor and is electrically connected to the semiconductor circuit. The heat distribution measurement component includes multiple heat pickup areas and multiple measurement ports. The multiple heat pickup areas are distributed at different positions of the MEMS infrared sensor. The heat distribution measurement component includes at least one thermoelectric temperature measurement unit. The hot end and the cold end of the thermoelectric temperature measurement unit are respectively located at different heat pickup areas. The positive terminal and the negative terminal of the thermoelectric temperature measurement unit are respectively led to different measurement ports.

2. The integrated infrared detector according to claim 1, characterized in that: The semiconductor circuit is located at the periphery of the heat distribution measurement component; or a part of the semiconductor circuit is located at the periphery of the heat distribution measurement component, and another part is located below the heat distribution measurement component.

3. The integrated infrared detector according to claim 1, characterized in that: The heat distribution measurement component includes at least one temperature measurement group, each of which includes a plurality of thermoelectric temperature measurement units. The plurality of thermoelectric temperature measurement units in the same temperature measurement group are evenly distributed on the same circle with the center of the MEMS infrared sensor as the center and are connected in sequence. The proximal ends of two adjacently connected thermoelectric temperature measurement units in the same temperature measurement group are located in the same heat picking-up area, and the distal ends of two adjacently connected thermoelectric temperature measurement units in the same temperature measurement group are located in different heat picking-up areas, respectively. A common measurement port is led out from the connection between two adjacently connected thermoelectric temperature measurement units in the same temperature measurement group.

4. The integrated infrared detector according to claim 3, characterized in that: Each of the heat pickup areas corresponds to at least one of the measurement ports.

5. The integrated infrared detector according to claim 3, characterized in that: Two adjacently connected thermoelectric temperature measuring units in the same temperature measuring group are connected in forward series or reverse series.

6. The integrated infrared detector according to claim 4, characterized in that: The heat distribution measurement component includes a plurality of temperature measurement groups distributed sequentially from the inside to the outside with the MEMS infrared sensor as the center, and the orientations of the plurality of heat picking areas corresponding to the temperature measurement groups located in the inner circle are staggered with the orientations of the plurality of heat picking areas corresponding to the temperature measurement groups located in the outer circle.

7. The integrated infrared detector according to claim 6, characterized in that: The structures of the multiple thermoelectric temperature measuring units in the same temperature measuring group are the same, and the structures of the multiple thermoelectric temperature measuring units in different temperature measuring groups are the same or different.

8. The integrated infrared detector according to claim 6, characterized in that: The cross section of the MEMS infrared sensor is polygonal, and the thermoelectric temperature measuring unit includes a zigzag thermocouple strip or a straight thermocouple strip; or the cross section of the MEMS infrared sensor is circular, and the thermoelectric temperature measuring unit includes an arc-shaped thermocouple strip.

9. The integrated infrared detector according to claim 1, characterized in that: The thermoelectric temperature measuring unit includes a group of thermocouple pairs or multiple groups of thermocouple pairs connected in series; the thermocouple pairs include a first thermocouple bar and a second thermocouple bar connected to each other, the first thermocouple bar and the second thermocouple bar are located in the same plane or different planes, and the first thermocouple bar and the second thermocouple bar are made of semiconductor materials of different conductive types or different conductor materials.

10. The integrated infrared detector according to claim 1, characterized in that: The number of the heat pickup areas ranges from 2 to 100.

11. The integrated infrared detector according to claim 10, characterized in that: A plane rectangular coordinate system is established on the plane where the MEMS infrared sensor is located with the center of the MEMS infrared sensor as the origin, and the orientations of the multiple heat picking areas include at least four orientations of 0°, 90°, 180° and 270°, or at least eight orientations of 0°, 45°, 90°, 135°, 180°, 225°, 270° and 315°, or at least 12 orientations of 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, 330° and 360°.

12. The integrated infrared detector according to claim 1, characterized in that: The MEMS infrared sensor includes a plurality of thermopile pixel structures arranged in an array.

13. A method for measuring heat distribution of an integrated infrared detector, characterized in that: An integrated infrared detector as described in any one of claims 1 to 12 is provided, which reads the potential difference between the two measurement ports corresponding to any two of the heat pickup areas to determine the temperature difference between the any two of the heat pickup areas.

14. The heat distribution measurement method of the integrated infrared detector according to claim 13, characterized in that: The semiconductor circuit includes a correction module, which corrects the measurement result of the MEMS infrared sensor based on the temperature difference between the plurality of heat pickup areas.

Images