Semiconductor circuit module and manufacturing method thereof

Abstract

The invention is suitable for the technical field of semiconductors, and particularly relates to a semiconductor circuit module and a manufacturing method thereof. The semiconductor circuit module includes: a metal substrate; a plurality of circuit components, wherein the plurality of circuit components are configured at preset positions of the metal substrate; the binding metal wire is used for realizing electric connection among the plurality of circuit components; a package; an electric control board; the limiting metal base is fixedly connected with the electric control board; the ejection frame is fixedly connected with the electric control plate; one end of each limiting pin is fixedly connected with the metal substrate, the other end of each limiting pin penetrates through the plastic package structure to be fixedly connected with the limiting metal base, the limiting pins are used for electrically connecting the electric control board with the metal substrate, and the ejection frame is used for ejecting the limiting pins out of the limiting metal base. Compared with the prior art, the development cost of the semiconductor circuit is reduced, the layering problem of the insulating layer is solved, and the reliability of the semiconductor circuit is improved.

Description

Technical Field

[0001] The present invention is applicable to the field of semiconductor technology, and in particular relates to a semiconductor circuit module and a manufacturing method thereof. Background Art

[0002] The semiconductor circuit, namely the modular intelligent power system MIPS (Module Intelligent Power System), not only integrates the power switch device and the drive circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheating, and can send the detection signal to the CPU or DSP for interrupt processing. It is composed of high-speed and low-power consumption tube cores, optimized gate-level drive circuits and fast protection circuits. Even if a load accident or improper use occurs, the MIPS itself will not be damaged. MIPS generally uses IGBT as the power switch element, and has an integrated structure of built-in current sensor and drive circuit.

[0003] The existing MIPS modular intelligent power system IC drive control circuit, MIPS sampling amplifier circuit, PFC current protection circuit and other low-voltage control circuits and the inverter circuit composed of high-voltage semiconductor circuit modules are arranged on the same board. At the same time, the existing MIPS modular intelligent power system only integrates a single MIPS module, and the integration of multiple MIPS modular intelligent power systems has not yet been realized. In the face of market miniaturization and low-cost competition, higher requirements are placed on the high integration and high heat dissipation technology of the MIPS modular intelligent power system.

[0004] Therefore, there is an urgent need for a new semiconductor circuit module and a manufacturing method thereof to solve the above problems. Summary of the invention

[0005] The present invention proposes a semiconductor circuit module and a manufacturing method thereof, aiming to solve the problem of insulating layer delamination in existing semiconductor circuits and improve the reliability of semiconductor circuits. At the same time, the module can be installed and replaced at any time according to different pin schemes inside the semiconductor circuit, thereby improving product design flexibility and reducing development costs.

[0006] In a first aspect, the present invention provides a semiconductor circuit module, the semiconductor circuit module comprising:

[0007] metal substrate;

[0008] A plurality of circuit components, wherein the plurality of circuit components are arranged at preset positions on the metal substrate;

[0009] A binding metal wire, wherein the binding metal wire is used to realize electrical connection between the plurality of circuit components;

[0010] A packaging body, wherein the packaging body packages the metal substrate, the plurality of circuit components and the binding metal wires into a plastic packaging structure;

[0011] An electric control board, the electric control board is fixedly connected to the plastic packaging structure;

[0012] A limiting metal base, wherein the limiting metal base is fixedly connected to the electric control board;

[0013] An ejector frame, the ejector frame is fixedly connected to the electric control board;

[0014] A plurality of limit pins, one end of the limit pin is fixedly connected to the metal substrate, the other end of the limit pin passes through the plastic packaging structure and is fixedly connected to the limit metal base, the limit pin is used to electrically connect the electric control board to the metal substrate, and the ejection frame is used to eject the limit pin from the limit metal base.

[0015] Preferably, the limiting pin includes a pin welding portion fixed to the metal substrate, two elastic extension portions respectively fixed to the opposite ends of the pin welding portion, and two limiting portions formed by bending the two extension portions toward one end close to the pin welding portion, and the limiting portion passes through the plastic packaging structure and is fixedly connected to the limiting metal base.

[0016] Preferably, the ejection frame includes a left bracket and a right bracket respectively fixed to the electric control board and a return spring connecting the left bracket and the right bracket.

[0017] Preferably, the limiting metal base includes a plurality of metal locking grooves, and the limiting portion is embedded and fixed in the metal locking grooves.

[0018] Preferably, the plurality of limit pins are respectively fixed at two opposite ends of the metal substrate.

[0019] Preferably, the metal substrate further includes an insulating layer and a protective layer, the insulating layer is attached to one side of the metal substrate, the copper foil layer is laminated to the side of the insulating layer away from the metal substrate, and the protective layer is attached to the side of the copper foil layer away from the insulating layer.

[0020] Preferably, the circuit wiring layer is produced by etching the copper foil layer.

[0021] Preferably, the circuit components include chip capacitors, chip resistors and components, and the chip capacitors, chip resistors and components are respectively mounted on the metal substrate.

[0022] In a second aspect, the present invention further provides a method for manufacturing a semiconductor circuit module as described in the above embodiment, the manufacturing method comprising the following steps:

[0023] S1. Place the metal substrate on a special carrier;

[0024] S2, mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the metal substrate by applying solder paste or applying silver glue through an automatic die bonding device;

[0025] S3, mounting the high-voltage power device on the silver-plated copper heat sink through a soft solder die-bonding machine to form a semi-finished component;

[0026] S4, using automatic SMT equipment to reduce resistance and capacity, and mount the semi-finished components on the component installation position;

[0027] S5, placing the pins on the corresponding welding positions of the metal substrate by a robot or manually, passing the metal substrate including the special carrier through a reflow furnace, and welding all the circuit components to the corresponding mounting positions;

[0028] S6, inspecting the welding quality of the circuit components by visual inspection AOI equipment, and removing the flux and aluminum chips remaining on the metal substrate by spraying and ultrasound;

[0029] S7, electrically connecting the circuit components and the circuit wiring layer through the binding metal wires;

[0030] S8, plastic-sealing the metal substrate circuit in a specific mold by a packaging device, and then marking it by laser marking;

[0031] S9. Post-curing stress relief treatment is carried out in a high-temperature oven, and electrical parameter testing is performed to form a final qualified product.

[0032] Compared with the prior art, the present invention connects the metal substrate to the electronic control board through the limit pins by welding the limit pins. The limit pins can solve the problem of delamination of the insulation layer at the pin welding point caused by the stress generated by the pin welding tolerance during plastic sealing; the limit pin structure can effectively avoid the influence of human static electricity on the internal chip; the limit pin structure does not require the pin to be cut and formed, which reduces the equipment procurement cost and improves production efficiency; the present invention proposes a limit pin structure with a self-locking function to ensure connection reliability; there is no need to use wave soldering between the metal substrate and the electronic control board, which solves the problem of welding defects and improves product reliability; it can facilitate application scenarios where semiconductor circuits need to be frequently replaced during research and development, testing and failure analysis, improves efficiency, reduces damage to the electronic control board and improves product reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings:

[0034] Figure 1 is a schematic structural diagram of an electric control board of a semiconductor circuit module provided by an embodiment of the present invention;

[0035] Figure 2 is a structural schematic diagram of a plastic packaging structure provided by an embodiment of the present invention;

[0036] Figure 3 is a schematic diagram of the limit pin structure provided by an embodiment of the present invention;

[0037] Figure 4 is a schematic structural diagram of a semiconductor circuit module provided by an embodiment of the present invention;

[0038] Figure 5 It is a flowchart of a method for preparing a semiconductor circuit module provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0040] Please refer to Figure 1-Figure 4 In the first aspect, the present invention proposes a semiconductor circuit module, the semiconductor circuit module comprising: a metal substrate 1, a plurality of circuit components, a binding metal wire 12, a package body 11, an electric control board 15, a limiting metal base 13, an ejection frame 16, and a plurality of limiting pins 10;

[0041] The plurality of circuit components are arranged at preset positions on the metal substrate 1;

[0042] The binding metal wires 12 are used to realize electrical connection between the multiple circuit components, and the binding metal wires 12 are made of one or more materials such as gold, aluminum, and copper.

[0043] The packaging body 11 packages the metal substrate 1, the plurality of circuit components and the binding metal wires 12 into a plastic package structure 14; specifically, the packaging body 11 is a powdered molding compound made of epoxy resin as a base resin, high-performance phenolic resin as a curing agent, silicon micropowder and the like as fillers, and a variety of additives. The powdered molding compound is extruded into a mold cavity by a heat transfer molding method and the semiconductor chip therein is embedded, and is cross-linked and cured to form a device with a certain external structure.

[0044] The electric control board 15 is fixedly connected to the plastic package structure 14; specifically, the electric control board 15 is the control center of the entire semiconductor circuit module. The plastic package structure 14 not only integrates the power switch device and the drive circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheating, and can send detection signals to the CPU or DSP for interrupt processing.

[0045] The limiting metal base 13 is fixedly connected to the electric control board 15;

[0046] The ejection frame 16 is fixedly connected to the electric control board 15;

[0047] One end of the limit pin 10 is fixedly connected to the metal substrate 1, and the other end of the limit pin 10 passes through the plastic packaging structure 14 and is fixedly connected to the limit metal base 13. The limit pin 10 is used to electrically connect the electric control board 15 to the metal substrate 1, and the ejection frame 16 is used to eject the limit pin 10 from the limit metal base 13. The material of the limit pin 10 is C194 (-1 / 2H) (chemical composition: Cu (≧97.0) Fe: 2.4P: 0.03Zn: 0.12) or KFC (-1 / 2H) (chemical composition: Cu (≧99.6) Fe: 0.1 (0.05-0.15) P: 0.03 (0.025-0.04)), and a 0.5 mm copper sheet is stamped and bent by machining to form the required shape, and then the surface is first nickel-plated with a thickness of 0.1-0.5 um and then tin-plated with a thickness of 2-5 um.

[0048] In the embodiment of the present invention, the limit pin 10 includes a pin welding portion 001 fixed to the metal substrate 1, two elastic extension portions 002 respectively fixed to opposite ends of the pin welding portion 001, and two limit portions 003 formed by bending the two extension portions 002 toward one end close to the pin welding portion 001, and the limit portion 003 penetrates the plastic packaging structure 14 and is fixedly connected to the limit metal base 13. Specifically, the pin welding portion 001 can effectively improve the welding ability of the limit pin 10 and the metal substrate 1.

[0049] In the embodiment of the present invention, the ejection frame 16 includes a left bracket 005 and a right bracket 004 respectively fixed to the electric control board 15, and a return spring 006 connecting the left bracket 005 and the right bracket 004. By pressing the left bracket 005 and the right bracket 004, the limit portion 003 of the limit pin 10 can be ejected from the metal clamping groove 007 to achieve the separation between the plastic package structure 14 and the electric control board 15; the return spring 006 has a function of returning the left and right brackets 004 after being pressed.

[0050] In the embodiment of the present invention, the limiting metal base 13 includes a plurality of metal locking grooves 007 , and the limiting portion 003 is embedded and fixed in the metal locking grooves 007 .

[0051] Specifically, the plastic package structure 14 (i.e., semiconductor circuit) is installed and fixed by the limiting metal base 13, and at the same time, the metal substrate 1 of the present invention is prevented from directly contacting the electric control board 15, thereby preventing the condensed water above the electric control board 15 from penetrating into the internal circuit on the metal substrate 1 of the present invention. Since the limiting pin 10 is formed by bending in one piece and has high strength, two limiting parts 003 are designed at the same time, one of which contacts the inner wall of the metal clamping groove 007 to realize the electrical connection between the limiting pin 10 and the metal clamping groove 007, and the other limiting part 003 is connected to the limiting hole reserved in the metal clamping groove 007 to realize the installation and fixation of the limiting pin 10 and the metal clamping groove 007.

[0052] In the embodiment of the present invention, the plurality of limit pins 10 are respectively fixed at two opposite ends of the metal substrate 1 .

[0053] In the embodiment of the present invention, the metal substrate 1 further includes an insulating layer 02 and a protective layer 04, wherein the insulating layer 02 is attached to one side of the metal substrate 01, the copper foil layer 03 is pressed onto the side of the insulating layer 02 away from the metal substrate 01, and the protective layer 04 is attached to the side of the copper foil layer 03 away from the insulating layer 02. Specifically, the metal substrate 01 serves as a carrier of the entire internal circuit of the semiconductor circuit and plays a heat dissipation role for the entire semiconductor circuit; the insulating layer 02 prevents the circuit wiring layer from being energized with the metal substrate 01, thereby causing the risk of short circuit and leakage in the internal circuit; the copper foil layer 03 is formed by etching the copper foil layer 03 to form the required circuit, thereby forming the circuit wiring layer; the protective layer 04 is also called a green oil layer, which prevents tinning where it should not be tinned, increases the withstand voltage between the circuits, prevents short circuits caused by oxidation or contamination of the circuits, and protects the circuits.

[0054] In the embodiment of the present invention, the circuit wiring layer is manufactured by etching the copper foil layer 03 .

[0055] In the embodiment of the present invention, the circuit components include chip capacitor 06, chip resistor 05 and component 07, and the chip capacitor 06, the chip resistor 05 and the component 07 are respectively mounted on the metal substrate 1. Specifically, the chip resistor 05 is connected to the gate of the IGBT chip in the semiconductor circuit, and the switching speed of the IGBT is limited by current limiting; the chip capacitor 06 plays a filtering, coupling and bootstrapping role in the semiconductor circuit; the component 07 constitutes the chip required for the internal functional circuit of the semiconductor circuit; the component semi-finished product 08 is formed by mounting a high-voltage power component with high heat dissipation requirements on a small heat sink 09 to form a component semi-finished product 08; the circuit components also include a heat sink 09, and the heat sink 09 adopts a copper surface silver plating process to achieve a better fit between the surface component 07 and the heat sink 09, thereby improving the heat dissipation capacity.

[0056] Compared with the prior art, the present invention connects the metal substrate to the electronic control board through the limit pins by welding the limit pins. The limit pins can solve the problem of delamination of the insulation layer at the pin welding point caused by the stress generated by the pin welding tolerance during plastic sealing; the limit pin structure can effectively avoid the influence of human static electricity on the internal chip; the limit pin structure does not require the pin to be cut and formed, which reduces the equipment procurement cost and improves production efficiency; the present invention proposes a limit pin structure with a self-locking function to ensure connection reliability; there is no need to use wave soldering between the metal substrate and the electronic control board, which solves the problem of welding defects and improves product reliability; it can facilitate application scenarios where semiconductor circuits need to be frequently replaced during research and development, testing and failure analysis, improves efficiency, reduces damage to the electronic control board and improves product reliability.

[0057] Second, please refer to Figure 5 The present invention also proposes a method for manufacturing a semiconductor circuit module as described in the above embodiment, the manufacturing method comprising the following steps:

[0058] S1. Place the metal substrate on a special carrier;

[0059] S2, mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the metal substrate by applying solder paste or applying silver glue through an automatic die bonding device;

[0060] S3, mounting the high-voltage power device on the silver-plated copper heat sink through a soft solder die-bonding machine to form a semi-finished component;

[0061] S4, using automatic SMT equipment to reduce resistance and capacity, and mount the semi-finished components on the component installation position;

[0062] S5, placing the pins on the corresponding welding positions of the metal substrate by a robot or manually, passing the metal substrate including the special carrier through a reflow furnace, and welding all the circuit components to the corresponding mounting positions;

[0063] S6, inspecting the welding quality of the circuit components by visual inspection AOI equipment, and removing the flux and aluminum chips remaining on the metal substrate by spraying and ultrasound;

[0064] S7, electrically connecting the circuit components and the circuit wiring layer through the binding metal wires;

[0065] S8, plastic-sealing the metal substrate circuit in a specific mold by a packaging device, and then marking it by laser marking;

[0066] S9. Post-curing stress relief treatment is carried out in a high-temperature oven, and electrical parameter testing is performed to form a final qualified product.

[0067] The present invention provides a method for manufacturing a semiconductor circuit module, which can prepare a semiconductor circuit module as described in the above embodiments, and the effects achieved are the same, which will not be described in detail herein.

[0068] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0069] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only the preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation manner. The above-mentioned specific implementation manner is only illustrative rather than restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A semiconductor circuit module, characterized in that: The semiconductor circuit module comprises: metal substrate; A plurality of circuit components, wherein the plurality of circuit components are arranged at preset positions on the metal substrate; A binding metal wire, wherein the binding metal wire is used to realize electrical connection between the plurality of circuit components; A packaging body, wherein the packaging body packages the metal substrate, the plurality of circuit components and the binding metal wires into a plastic packaging structure; An electric control board, the electric control board is fixedly connected to the plastic packaging structure; A limiting metal base, wherein the limiting metal base is fixedly connected to the electric control board; An ejector frame, the ejector frame is fixedly connected to the electric control board; A plurality of limit pins, one end of the limit pin is fixedly connected to the metal substrate, the other end of the limit pin passes through the plastic packaging structure and is fixedly connected to the limit metal base, the limit pin is used to electrically connect the electric control board to the metal substrate, and the ejection frame is used to eject the limit pin from the limit metal base.

2. The semiconductor circuit module according to claim 1, wherein: The limiting pin includes a pin welding part fixed to the metal substrate, two elastic extension parts respectively fixed to the opposite ends of the pin welding part, and two limiting parts formed by bending the two extension parts toward one end close to the pin welding part. The limiting part passes through the plastic packaging structure and is fixedly connected to the limiting metal base.

3. The semiconductor circuit module according to claim 2, wherein: The ejection frame includes a left bracket and a right bracket respectively fixed to the electric control board and a return spring connecting the left bracket and the right bracket.

4. The semiconductor circuit module according to claim 2, wherein: The limiting metal base includes a plurality of metal clamping grooves, and the limiting portion is embedded and fixed in the metal clamping grooves.

5. The semiconductor circuit module according to claim 1, wherein: The plurality of limit pins are respectively fixed at two opposite ends of the metal substrate.

6. The semiconductor circuit module according to claim 1, wherein: The metal substrate also includes an insulating layer, a copper foil layer and a protective layer. The insulating layer is attached to one side of the metal substrate, the copper foil layer is pressed to the side of the insulating layer away from the metal substrate, and the protective layer is attached to the side of the copper foil layer away from the insulating layer.

7. The semiconductor circuit module according to claim 6, wherein: A circuit wiring layer is produced by etching the copper foil layer.

8. The semiconductor circuit module according to claim 1, wherein: The circuit components include chip capacitors, chip resistors and components, and the chip capacitors, chip resistors and components are respectively mounted on the metal substrate.

9. A method for manufacturing a semiconductor circuit module, used for manufacturing the semiconductor circuit module according to any one of claims 1 to 8, characterized in that: The manufacturing method comprises the following steps: S1. Place the metal substrate on a special carrier; S2, mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the metal substrate by applying solder paste or applying silver glue through an automatic die bonding device; S3, mounting the high-voltage power device on the silver-plated copper heat sink through a soft solder die-bonding machine to form a semi-finished component; S4, using automatic SMT equipment to reduce resistance and capacity, and mount the semi-finished components on the component installation position; S5, placing the pins on the corresponding welding positions of the metal substrate by a robot or manually, passing the metal substrate including the special carrier through a reflow furnace, and welding all the circuit components to the corresponding mounting positions; S6, inspecting the welding quality of the circuit components by visual inspection AOI equipment, and removing the flux and aluminum chips remaining on the metal substrate by spraying and ultrasound; S7, electrically connecting the circuit components and the circuit wiring layer through the binding metal wires; S8, plastic-sealing the metal substrate circuit in a specific mold by a packaging device, and then marking it by laser marking; S9. Post-curing stress relief treatment is carried out in a high-temperature oven, and electrical parameter testing is performed to form a final qualified product.

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